CN101285974B - TFT LCD panel electrostatic discharge protecting circuit and LCD device - Google Patents

TFT LCD panel electrostatic discharge protecting circuit and LCD device Download PDF

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CN101285974B
CN101285974B CN 200710065343 CN200710065343A CN101285974B CN 101285974 B CN101285974 B CN 101285974B CN 200710065343 CN200710065343 CN 200710065343 CN 200710065343 A CN200710065343 A CN 200710065343A CN 101285974 B CN101285974 B CN 101285974B
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thin film
film transistor
discharge protection
common electrode
electrostatic discharge
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CN 200710065343
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CN101285974A (en
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金在光
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北京京东方光电科技有限公司
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Abstract

The invention discloses a TFTLCD panel electro-static discharge protection circuit, comprising a substrate, a group of grid lines and a group of data lines; the data lines are arranged crosswise with the grid lines and respectively define a pixel area, wherein, each pixel area comprises a thin film transistor (TFT) device and a pixel electrode; the TFTLCD panel electro-static discharge protection circuit also comprises a grid line lead pad and a data line lead pad which are formed on the edges of the substrate and are respectively connected with the grid lines and the data lines, a main common electrode wiring and a buffer common electrode wiring which are formed at the periphery of the substrate, a first electro-static discharge protection device which is connected with the grid lines and the buffer common electrode wiring, a second electro-static discharge protection device which is connected with the date lines and the buffer common electrode wiring, a third electro-static discharge protection device which is connected with the main common electrode wiring and the buffer common electrode wiring. The protection circuit of the invention can cut off the static electricity which enters the panel in advance and effectively prevent the effect of static electricity on the panel drivers and the short circuit phenomena of electrode wirings.

Description

一种TFT LCD面板静电放电保护电路及液晶显示器 One kind of TFT LCD panel electrostatic discharge protection circuit and a liquid crystal display

技术领域 FIELD

[0001] 本发明涉及一种液晶显示器件的周边电路及具有该周边电路的液晶显示器,特别涉及一种薄膜晶体管液晶显示器(TFT LCD)面板静电放电保护电路及具有该电路的液晶显不器。 [0001] The present invention relates to a liquid crystal display device having a liquid crystal display and peripheral circuits of the peripheral circuit, particularly relates to a thin film transistor liquid crystal display (TFT LCD) panel and a circuit having electrostatic discharge protection circuit of the liquid crystal device was not.

背景技术 Background technique

[0002] 与过去的阴极射线管(CRT)相比,非常薄而且具有极好的色彩特性的薄膜晶体管液晶显示器(TFT IXD)已经高度发展,而且已经变得普遍了。 [0002] Compared to past a cathode ray tube (CRT), a very thin and have excellent color characteristics of a thin film transistor liquid crystal display (TFT IXD) have been highly developed, and has become common. 通常,液晶显示器设备是一种用于根据单独施加到以矩阵排列的像素上的数据信号来显示图像的设备,这些像素控制透光率以产生一幅图像,因此一个液晶显示器设备包括一个像素矩阵和用于驱动这些像素的驱动器集成电路(IC)。 Typically, a liquid crystal display device according to a pixel matrix applied separately to the data signal to pixels arranged in a matrix in an image display apparatus, which controls the light transmittance of the pixels to produce an image, so a liquid crystal display device comprising and means for driving the pixels of the driver integrated circuit (IC).

[0003] 由于上述薄膜晶体管液晶显示器(TFT LCD)的上下玻璃基板是绝缘体,所以在薄膜晶体管阵列的制造过程期间产生的静电能够在该玻璃上聚集,而且,静电能够由施加到各种衬底上的各种处理过程产生。 [0003] Since the thin film transistor liquid crystal display (TFT LCD) upper and lower substrate is a glass insulator, static electricity during the manufacturing process of a thin film transistor array can be generated on the glass aggregate, and, by the static electricity can be applied to various substrates various processes on produced. 这种静电能够导致对薄膜晶体管阵列的静电放电损害。 Such static electricity can cause electrostatic discharge damage to the thin film transistor array. 此外,静电能够导致粉尘颗粒被吸附到玻璃基板上,这会污染薄膜晶体管阵列和彩色滤光片阵列。 In addition, dust particles can cause static electricity is adsorbed onto a glass substrate, which can contaminate the thin film transistor array and a color filter array. 为了减少静电,可以处理用于生产薄膜晶体管液晶显示器的制造设备和采用各种工艺以使静电最小化。 To reduce static electricity, it may be processed for manufacturing a thin film transistor liquid crystal display equipment using a variety of processes and to minimize the electrostatic. 然而,一个良好设计的薄膜晶体管阵列仍然必须包括对静电放电的防护。 However, a thin film transistor array must still be well-designed to include electrostatic discharge protection.

[0004] 图1为现有技术的静电放电保护电路示意图,该静电放电保护电路包括:一组向栅极线施加信号的栅极线引线衬垫8 ;—组向数据线施加信号的数据线引线衬垫9 ;一组栅极线3,形成于薄膜晶体管阵列基板上;一组数据线4,形成于薄膜晶体管阵列基板上;主公共电极配线2,形成于薄膜晶体管阵列基板外围上;一组用于形成存储电容的公共电极(Cst on Common)形成于薄膜晶体管阵列基板上,并与主公共电极配线2连接;一组第一静电放电保护器件5,连接栅极线3和主公共电极配线2 ;—组第二静电放电保护器件6,连接数据线4和主公共电极配线2。 [0004] FIG. 1 is a prior art electrostatic discharge protection circuit schematic, the electrostatic discharge protection circuit comprising: a plurality of gate signal line lead pad is applied to the gate line 8; - sets data line signal applied to the data lines lead pad 9; a group of gate lines 3 formed on the thin film transistor array substrate; a group of data lines 4, are formed on the thin film transistor array substrate; main common electrode wiring 2 formed on the periphery of the thin film transistor array substrate; a common electrode (Cst on common) a set for forming a storage capacitor is formed on the thin film transistor array substrate and the common electrode 2 is connected to the main line; a plurality of first electrostatic discharge protection device 5, connected to the gate line 3 and the main a common electrode wiring 2; - a second set of electrostatic discharge protection device 6, connected to the data line 4 and the main common electrode wiring 2.

[0005] 现有技术中薄膜晶体管液晶显示器(TFT LCD)面板制造过程中静电放电保护电路将产生的高电静电的分散方法如下: [0005] The method of dispersing a high electric static prior art thin-film transistor liquid crystal display (TFT LCD) panel manufacturing process to produce an electrostatic discharge protection circuit is as follows:

[0006] 如果高电压静电发生在一条数据线4上,则此高电压静电会分散至这条数据线4 并进一步通过第二静电放电保护器件6分散至与数据线连接的整个面板上的主公共电极配线上2,使整个面板保持同一电位。 [0006] If the high voltage of static electricity on a data line 4, then this high voltage static electricity which will be routed to the master data lines, and further on by a second electrostatic discharge protection device 6 is connected to the data line to the dispersion of the entire panel 4 the common electrode wiring 2, the entire panel holding the same potential. 第二静电放电保护器件6的电阻为数万千欧姆(ΚΩ), 所以此时的第二静电放电保护器件6起开关作用。 Resistance of the second electrostatic discharge protection device 6 is several thousands of ohms (ΚΩ), so in this case a second electrostatic discharge protection device 6 acts as a switch. 同理当高电压静电发生在栅极线3上, 则此高电压静电会分散至这条栅极线3并进一步通过第二静电放电保护器件5分散至与数据线连接的整个面板上的主公共电极配线2上,使整个面板保持同一电位。 Similarly when the high voltage of static electricity in the gate line 3, this high voltage static electricity will be distributed to this main common gate line 3 on the entire panel, and further dispersed with a data line connected through a second electrostatic discharge protection device 5 upper electrode wiring 2, the entire panel holding the same potential.

[0007] 上述现有技术中的静电防护方法能够有效地防止面板内部发生的静电击穿现象。 [0007] The method of the above-described prior art ESD protection is possible to effectively prevent the electrostatic breakdown phenomenon occurs inside the panel. 但是,对于外部流入的静电比较脆弱,尤其是在线与线交叉重叠部位及过孔等地方容易引发短路,导致栅极线和公共电极之间的短路(Gate-Common Short),数据线和公共电极之间的短路(Data Common Short)及像素缺陷(Pixel Defect)等不良。 However, the inflow of the external electrostatic fragile, especially in line with the line overlap portion through hole and the like where it can lead to a short circuit, a short between the gate line and the common electrode (Gate-Common Short), a data line and a common electrode short circuit (Data Common Short) between the defect and the pixel (pixel defect) and other undesirable. 发明内容 SUMMARY

[0008] 本发明的目的是针对现有技术的缺陷,提出一种薄膜晶体管液晶显示器(TFT LCD)面板静电放电保护电路,通过事先切断进入面板内部的静电电流,有效防止对面板驱动的影响以及电极配线之间的短路现象。 [0008] The object of the present invention is directed to drawbacks of the prior art, to provide a thin film transistor liquid crystal display (TFT LCD) panel, an electrostatic discharge protection circuit, by previously cutting the panel into the interior of an electrostatic current, effectively prevent the panel drive and short circuit between the electrode wiring.

[0009] 为了实现上述目的,本发明提供一种TFT IXD面板静电放电保护电路,包括: [0009] To achieve the above object, the present invention provides a TFT IXD panel electrostatic discharge protection circuit, comprising:

[0010] 一基板; [0010] a substrate;

[0011] 一组栅极线,形成于所述基板上; [0011] a group of gate lines formed on the substrate;

[0012] 一组数据线,形成于所述基板上,与所述栅极线交叉设置,并定义一像素区域,其中每一像素区域包含有薄膜晶体管器件和像素电极; [0012] a group of data lines formed on the substrate, intersecting the gate lines is provided, and define a pixel area, wherein each pixel region comprises a pixel electrode and a thin film transistor device;

[0013] 一栅极线引线衬垫,形成于所述基板边缘,与所述栅极线连接; [0013] a gate lead line pads, formed on the edge of the substrate, connected to the gate line;

[0014] 一数据线引线衬垫,形成于所述基板边缘,与所述数据线连接; [0014] a data line lead pads formed on the edge of the substrate, connected to the data line;

[0015] 一主公共电极配线,形成于所述基板外围; [0015] a main common electrode wirings, formed on the periphery of the substrate;

[0016] 一缓冲公共电极配线,形成于在所述基板外围; [0016] a buffer common electrode wirings, formed on the periphery of the substrate;

[0017] 一第一静电放电保护器件,连接所述栅极线和缓冲公共电极配线; [0017] a first electrostatic discharge protection device, a buffer connected to the gate line and the common electrode wiring;

[0018] 一第二静电放电保护器件,连接所述数据线和缓冲公共电极配线; [0018] a second electrostatic discharge protection device, a buffer connected to the data line and the common electrode wiring;

[0019] 一第三静电放电保护器件,连接所述主公共电极配线和缓冲公共电极配线,用于控制所述主公共电极配线和缓冲公共电极配线之间的导通;所述缓冲公共电极配线和第三静电放电保护器件,用于切断进入面板内部的静电,避免静电直接冲击所述栅极线和数据线。 [0019] a third electrostatic discharge protection device connected to the main common electrode wiring and the common electrode wiring buffer, for controlling the main common electrode wiring and the buffer conduction between the common electrode wiring; the buffer common electrode wiring and the third electrostatic discharge protection device for cutting into the interior of the electrostatic panel, to avoid direct impact of the electrostatic gate lines and data lines.

[0020] 上述方案中,所述像素电极上形成有由公共电极引线与像素电极共同组成的存储电容,其中公共电极引线与所述的公共电极配线连接。 [0020] In the above embodiment, the storage capacitor is formed by the common electrode and the pixel electrode lead composed of the pixel electrode, wherein the common electrode lead is connected to the common electrode wiring. 所述第一静电放电保护器件、第二静电放电保护器件、第三静电放电保护器件具有相同的结构,分别由四个薄膜晶体管组成,第一个薄膜晶体管的源电极与它的栅电极连接在一起,并形成静电放电保护器件的一个输入端;第四个薄膜晶体管的源电极与它的栅电极连接在一起,并形成静电放电保护器件的一个输出端;第一个薄膜晶体管的源电极和第二个薄膜晶体管漏电极连接;第一个薄膜晶体管的漏电极、第二个薄膜晶体管的源电极、第三个薄膜晶体管的源电极、及第四个薄膜晶体管的漏电极连接在一起,并与第二个薄膜晶体管的栅电极和第三个薄膜晶体管的栅电极连接;第三个薄膜晶体管漏电极和第四个薄膜晶体管源电极连接。 The first electrostatic discharge protection device, a second electrostatic discharge protection device, a third electrostatic discharge protection device having the same structure, respectively, by four thin film transistors, a source electrode of the first thin film transistor and its gate electrode connected to with an input terminal, and the electrostatic discharge protection device is formed; a source electrode of the fourth thin film transistor and its gate electrode connected together and form an output of the electrostatic discharge protection device; a source electrode of the first thin film transistor and the second thin film transistor connected to the drain electrode; a drain of a thin film transistor, a drain electrode of the second thin film transistor is the source, the source electrode of the third thin film transistor, and fourth thin film transistor are connected together, and a gate electrode connected to the gate electrode of the second thin film transistor and the third thin film transistor; a third thin film transistor and a drain electrode of the fourth thin film transistor connected to the source.

[0021] 为了实现上述目的,本发明提供一种液晶显示器,包括: [0021] To achieve the above object, the present invention provides a liquid crystal display device, comprising:

[0022] 一薄膜晶体管阵列基板,其中所述薄膜晶体管阵列基板包含前述方案中描述的静电放电保护电路; [0022] a thin film transistor array substrate, wherein the thin film transistor array substrate comprising the foregoing embodiment described an electrostatic discharge protection circuit;

[0023] 一彩色滤光片基板,与所述薄膜晶体管阵列基板相对设置,其间注入液晶; [0023] a color filter substrate, the thin film transistor array substrate disposed opposite the liquid crystal injected therebetween;

[0024] 一公共电极,形成在所述的彩色滤光片基板或薄膜晶体管阵列基板上; [0024] a common electrode formed on the color filter substrate or a TFT array substrate;

[0025] 其中所述静电放电保护电路的公共电极配线与所述公共电极电连接。 [0025] wherein the electrostatic discharge protection circuit connected to the common electrode wiring and the common electrode.

[0026] 本发明相对于现有技术,在主公共电极配线外围增设了一层缓冲公共电极配线和一组第三静电放电保护器件。 [0026] The prior art relative to the present invention, the main common electrode wiring layer of the peripheral buffer addition of the common electrode wiring and a plurality of third electrostatic discharge protection device. 本发明的缓冲公共电极配线及第三静电放电保护器件事先切断了进入面板内部的静电,有效防止了对面板驱动的影响以及电极配线之间的短路现象。 Buffering the common electrode wirings of the present invention and a third electrostatic discharge protection device previously cut into the interior of the electrostatic panel, to effectively prevent the short circuit between the driving effect on the panel and the electrode wiring. [0027] 下面结合附图和具体实施例对本发明进行进一步更为详细地说明。 Drawings and specific embodiments of the present invention will be further explained in more detail [0027] below in conjunction. 附图说明 BRIEF DESCRIPTION

[0028] 图1为现有技术的静电放电保护电路示意图; [0028] FIG. 1 is a prior art electrostatic discharge protection circuit schematic;

[0029] 图2为本发明的静电放电保护电路示意图; [0029] FIG. 2 of the present invention the electrostatic discharge protection circuit schematic;

[0030] 图3为本发明一种使用四个薄膜晶体管的静电放电保护器件。 [0030] FIG 3 four thin film transistor is an electrostatic discharge protection device of the present invention is used.

[0031] 图中标记:1、缓冲公共电极配线;2、主公共电极配线;3、栅极线;4、数据线;5、第一静电放电保护器件;6、第二静电放电保护器件;7、第三静电放电保护器件;8、栅极线引线衬垫;9、数据线引线衬垫;10、第一个薄膜晶体管的栅电极;11、第一个薄膜晶体管的源电极;12、第一个薄膜晶体管的漏电极;13、第二个薄膜晶体管的栅电极;14、第二个薄膜晶体管的源电极;15、第二个薄膜晶体管的漏电极;16、第三个薄膜晶体管的栅电极;17、第三个薄膜晶体管的源电极;18、第三个薄膜晶体管的漏电极;19、第四个薄膜晶体管的栅电极;20、第四个薄膜晶体管的源电极;21、第四个薄膜晶体管的漏电极;22、第一个外引线; 23、第二个外引线。 [0031] FIG labeled: 1, a buffer common electrode wiring; 2, main common electrode wiring; 3, the gate line; 4, data lines; 5, a first electrostatic discharge protection device; 6, a second electrostatic discharge protection device; 7, a third electrostatic discharge protection device; 8, gate wire pad line; 9, the data line lead pad; 10, a first thin film transistor gate electrode; 11, a source electrode of the first thin film transistor; a drain 12, a first thin film transistor; 13, a gate electrode of the second thin film transistor; 14, a source electrode of the second thin film transistor; a drain 15, a second thin film transistor; 16, a third film the gate electrode of the transistor; a source electrode 17, the third thin film transistor; the drain 18, the third thin film transistor; 19, a gate electrode of the fourth thin film transistor; 20, a source electrode of the fourth thin film transistor; 21 , the drain of the fourth thin film transistor; 22, a first external lead; 23, the second external lead.

具体实施方式 Detailed ways

[0032] 图2是本发明的薄膜晶体管液晶显示器(TFT LCD)面板使用的一种静电放电保护电路示意图。 [0032] FIG. 2 is a thin film transistor liquid crystal display (TFT LCD) panels using an electrostatic discharge protection circuit schematic of the present invention. 如图2所示,本发明的静电放电保护电路包括:一组向栅极线施加信号的栅极线引线衬垫8 ;—组向数据线施加信号的数据线引线衬垫9 ;一组形成于薄膜晶体管阵列基板上的栅极线3 ;—组形成于薄膜晶体管阵列基板的数据线4 ;形成与薄膜晶体管阵列基板外围的主公共电极配线2,这些组成部分与现有技术中的类似,本发明区别于现有技术的特征在于:在薄膜晶体管阵列基板的外围,增加了缓冲公共电极配线1 ;第一静电放电保护器件5连接栅极线3和缓冲主公共电极配线1 ;第二静电放电保护器件6连接数据线4和缓冲主公共电极配线1 ;在主公共电极配线2与缓冲公共电极配线1连接位置附近设置了第三静电放电保护器件7。 As shown, the present invention is an electrostatic discharge protection circuit comprising: a plurality of gate signal line lead pad is applied to the gate line 8; - applied to the set data signal line lead pad 9 to the data lines; a group formed on the TFT array substrate gate line 3; - groups are formed on the thin film transistor array substrate having a data line 4; main common electrode wiring is formed and the periphery of the TFT array substrate, those components similar to the prior art 2 , different from the prior art the present invention is characterized: in the periphery of the TFT array substrate, the common electrode wiring increases the buffer 1; 5 a first electrostatic discharge protection device connected to the gate line 3 and the main common electrode wiring buffer 1; a second electrostatic discharge protection device 6 is connected to a main data line 4 and the common electrode wirings buffer 1; near the main common electrode wiring 2 and the buffer connection position of the common electrode wiring is provided a third electrostatic discharge protection device 7.

[0033] 下面结合图2所示的静电放电保护电路,对本发明保护电路的工作过程和机制做详细的说明。 [0033] below with reference to FIG electrostatic discharge protection circuit shown in FIG. 2, a detailed description of the working process and the mechanisms for the protection circuit of the invention.

[0034] 如果高电压静电发生在一条数据线4上,则此高电压静电会分散至这条数据线4 并进一步通过第二静电放电保护器件6分散到缓冲公共电极配线1上;接着通过第三静电放电保护器件7分散至主公共电极配线1上,从而把高电压静电分散至整个面板上。 [0034] If the high voltage of static electricity on a data line 4, then this high voltage static electricity which will be routed to the data lines 4 and further through a second electrostatic discharge protection device 6 to the buffer dispersed common electrode wirings 1; followed by the third electrostatic discharge protection device 7 to the main common electrode wiring dispersion 1, thereby the high voltage electrostatic dispersed over the entire panel. 如果高电压静电发生在一条栅极线3上,则此高电压静电会分散至这条数据线3并通过第一静电放电保护器件5分散到缓冲电极配线1上;接着通过第三静电放电保护器件7分散至主公共电极配线1上,从而把高电压静电分散至整个面板上。 If the high voltage static electricity occurs on the 3, this high voltage static electricity will be distributed to this data line and the gate line 3 through 5 a first electrostatic discharge protection device electrode wire 1 dispersed in the buffer; followed by a third electrostatic discharge protection device 7 to the main common electrode wiring dispersion 1, so that a high voltage electrostatic dispersed over the entire panel. 如果高电压静电发生在面板外部,高电压静电首先散到公共电极配线2上,并进一步通过第三静电放电保护器件7分散到缓冲公共电极配线1上,然后再通过第一或第二静电放电保护器件向数据线或栅极线分散,避免高电压静电直接从冲击栅极线、数据线或直接与他们连接的驱动电路。 If the high voltage of static electricity in the outer panel, the electrostatic high voltage to the common electrode wirings first dispersion 2, and further through the third electrostatic discharge protection device 7 distributed to the common electrode wiring buffer 1, and then through the first or second dispersion electrostatic discharge protection device to the data lines or gate lines, to avoid high voltage electrostatic shocks from the gate line, a data line driving circuit, or directly connected to them.

[0035] 由于每一静电放电保护器件的电阻为数万千欧姆(ΚΩ),所以此时的第二静电放电保护器件6和第三静电放电保护器件7起开关作用,使整个面板保持同一电位。 [0035] Since the resistance of each of the electrostatic discharge protection device is several thousands of ohms (ΚΩ), so in this case a second electrostatic discharge protection device 7 acts as a switch 6 and a third electrostatic discharge protection device, the entire panel holding the same potential . 即使缓冲公共电极配线1发生断路不起作用。 Even if a buffer common electrode wiring open circuit does not work. 还有主公共电极配线2起保护作用,使静电放电保护电路有双层保护。 There are two main protective effect common electrode wiring, the electrostatic discharge protection circuit with a double protection.

[0036] 本发明静电放电保护器件实施例: [0036] The present invention is an electrostatic discharge protection device of Example:

[0037] 图3是静电放电保护器件的一种具体实施例的电路示意图。 [0037] FIG. 3 is an electrostatic discharge device for protecting a circuit schematic diagram of a specific embodiment. 如图所示,此静电放电保护器件由四个薄膜晶体管构成,可以和薄膜晶体管阵列基板的薄膜晶体管同时形成。 As shown, the electrostatic discharge protection device consists of four thin film transistors, thin film transistors can be formed simultaneously with the thin film transistor array substrate. 其中,第一个薄膜晶体管的栅电极11和第一个薄膜晶体管的源电极12连接在一起,形成静电放电保护器件的第一个外引线23。 Wherein, the source electrode of the gate electrode of the first thin film transistor 11 and a thin-film transistor 12 are connected together to form a first outer lead 23 of the electrostatic discharge protection device. 同时,第二个薄膜晶体管的漏电极16与第一个薄膜晶体管的源电极12连接。 Meanwhile, the drain electrode of the second thin film transistor 16 is connected to the source electrode of the first thin film transistor 12. 与此类似,第二个薄膜晶体管的栅电极14和第二个薄膜晶体管的源电极15连接在一起。 Similarly, the gate electrode of the second thin film transistors 14 are connected together and the source electrode of the second thin film transistor 15. 同时,第一个薄膜晶体管的漏电极13与第二个薄膜晶体管的源电极15连接。 Meanwhile, the drain electrode of the first thin film transistor 13 is connected to the source electrode of the second thin film transistor 15. 第三个薄膜晶体管的栅电极17和第三个薄膜晶体管的源电极18连接在一起, 并与第一个薄膜晶体管的漏电极13以及第二个波密晶体管的栅电极14、源电极15连接在一起。 The gate electrode of the source electrode of the third thin film transistor 17 and the third thin film transistors 18 are connected together, and a thin film transistor and the first drain electrode 13 and the gate electrode of the second transistor 14 Bomi, a source electrode 15 is connected together. 第四个薄膜晶体管的漏电极22与第三个薄膜晶体管的源电极18连接。 A drain electrode of the fourth thin film transistor 22 is connected to the source electrode of the third thin film transistor 18. 与前类似, 第四个薄膜晶体管的栅电极20和第四个薄膜晶体管的源电极21连接在一起,形成静电放电保护器件的第二个外引线M。 A somewhat similar, a source electrode connected a fourth gate electrode of the thin film transistor 20 and the fourth thin film transistor 21, a second outer lead forming the electrostatic discharge protection device M. 同时第三个薄膜晶体管的漏电极19与第四个薄膜晶体管的源电极21连接。 While the drain electrode of the third thin film transistor 19 is connected to the source electrode of the fourth thin film transistor 21.

[0038] 图3中所示的静电放电保护器件可用作栅极线和主公共电极配线之间连接第二静电放电保护器件,以及用作数据线和主公共电极配线之间连接第一静电保护器件,还可用作主公共电极配线与缓冲公共电极配线之间连接的第三静电放电保护器件。 Electrostatic discharge protection device illustrated in [0038] FIG 3 may be used between the gate line electrode and the wiring connecting the second main common electrostatic discharge protection device, as well as the connection between the first data line and the main common electrode wirings an electrostatic protection device, may also serve as a third electrostatic connection between the common electrode wirings of the main common electrode wiring and the buffer discharge protection device. 其上述实施列仅为现有技术中静电保护环的一种,其实,第一、第二、第三静电放电保护器件可采用现有技术中的任何保护结构,三者可以相同也可不同。 Thereof to the above embodiment only a prior art electrostatic protection ring, in fact, the first, second, third electrostatic discharge protection device of any protecting structure may be employed in the prior art, three may be the same or different.

[0039] 概括言之,本发明提供一种薄膜晶体管液晶显示器(TFT IXD)面板静电放电保护电路,可以有效地增强薄膜晶体管液晶显示器(TFT LCD)对静电放电的保护能力。 [0039] In summary, the present invention provides a thin film transistor liquid crystal display (TFT IXD) electrostatic discharge protection circuit panel, can effectively enhance the electrostatic discharge protection of a thin film transistor liquid crystal display (TFT LCD). 在薄膜晶体管液晶显示器(TFT LCD)制造过程中产生的静电,通过此静电放电保护电路,事先切断了进入面板内部的静电,能够有效防止对面板驱动的影响以及电极配线之间的短路现象。 Static electricity generated in the thin film transistor liquid crystal display (TFT LCD) manufacturing process by which the electrostatic discharge protection circuit, an electrostatic pre-cut into the interior of the panel, it is possible to effectively prevent a short circuit between the driving effect on the panel and the electrode wiring.

[0040] 本发明同时公开一种液晶显示器,其中包含薄膜晶体管阵列极板,上述静电放电保护电路应用到该薄膜晶体管阵列基板上;彩色滤光片基板与薄膜晶体管阵列基板相对设置,其间注入液晶;彩色滤光片基板或薄膜晶体管阵列基板上形成有一公共电极;公共电极与所述静电放电保护电路的公共电极配线极电连接。 [0040] The present invention also discloses a liquid crystal display, a thin film transistor array which comprises a plate, the electrostatic discharge protection circuit is applied to the thin film transistor array substrate; a color filter substrate disposed opposite the thin film transistor array substrate, a liquid crystal is injected therebetween ; forming a common electrode on the color filter substrate or a TFT array substrate; a common electrode and the common electrode wirings of the electrostatic discharge protection circuit is electrically connected.

[0041] 最后说明的是,以上实施例仅用以说明本发明的技术方案而非限制,尽管参照最佳实施例对本发明进行了详细说明,本领域的技术人员应当理解,按照需要可使用不同材料和设备实现之,即可以对本发明的技术方案进行修改或者等同替换,而不脱离本发明技术方案的精神和方案。 [0041] Finally is noted that, the above embodiments are intended to illustrate and not limit the present invention, although the present invention has been described in detail with reference to preferred embodiments, those skilled in the art will appreciate, may be used as required differ Achieving materials and equipment that can be modified aspect of the present invention, or equivalent replacements without departing from the spirit and technical solutions of the present invention.

6 6

Claims (4)

1. 一种TFT IXD面板静电放电保护电路,其特征在于,包括: 一基板;一组栅极线,形成于所述基板上;一组数据线,形成于所述基板上,与所述栅极线交叉设置,并定义一像素区域,其中每一像素区域包含有薄膜晶体管器件和像素电极;一栅极线引线衬垫,形成于所述基板边缘,与所述栅极线连接; 一数据线引线衬垫,形成于所述基板边缘,与所述数据线连接; 一主公共电极配线,形成于所述基板外围; 一缓冲公共电极配线,形成于所述基板外围; 一第一静电放电保护器件,连接所述栅极线和缓冲公共电极配线; 一第二静电放电保护器件,连接所述数据线和缓冲公共电极配线; 一第三静电放电保护器件,连接所述主公共电极配线和缓冲公共电极配线,用于控制所述主公共电极配线和缓冲公共电极配线之间的导通;所述缓冲公共电极配线和第三 A TFT IXD panel electrostatic discharge protection circuit comprising: a substrate; a plurality of gate lines formed on the substrate; a plurality of data lines formed on the substrate, and the gate polar crossover settings, and define a pixel area, wherein each pixel region comprises a pixel electrode and a thin film transistor device; a gate lead line pads, formed on the edge of the substrate, connected to the gate line; a data line lead pads formed on the edge of the substrate, connected to the data line; a main common electrode wirings, formed on the periphery of the substrate; a buffer common electrode wirings, formed on the periphery of the substrate; a first electrostatic discharge protection device, a buffer connected to the gate line and the common electrode wiring; a second electrostatic discharge protection device, a buffer connected to the data line and the common electrode wiring; a third electrostatic discharge protection device connected to said main the common electrode wiring and the common electrode wiring buffer, for controlling the main common electrode wiring and the buffer conduction between the common electrode wiring; said common electrode wiring and the third buffer 电放电保护器件,用于切断进入面板内部的静电,避免静电直接冲击所述栅极线和数据线。 An electrostatic discharge protection device for cutting into the interior of the electrostatic panel, to avoid direct impact of the electrostatic gate lines and data lines.
2.根据权利要求1所述的静电放电保护电路,其特征在于:所述像素电极上形成有由公共电极引线与像素电极共同组成的存储电容,其中公共电极引线与所述的主公共电极配线连接。 The electrostatic discharge protection circuit according to claim 1, wherein: storage capacitor is formed by the common electrode and the pixel electrode lead composed of the pixel electrode, wherein the common electrode lead and the common electrode with the main line.
3.根据权利要求1或2所述的静电放电保护电路,其特征在于:所述第一静电放电保护器件、第二静电放电保护器件、第三静电放电保护器件具有相同的结构,分别由四个薄膜晶体管组成,第一个薄膜晶体管的源电极与它的栅电极连接在一起,并形成静电放电保护器件的一个输入端;第四个薄膜晶体管的源电极与它的栅电极连接在一起,并形成静电放电保护器件的一个输出端;第一个薄膜晶体管的源电极和第二个薄膜晶体管漏电极连接; 第一个薄膜晶体管的漏电极、第二个薄膜晶体管的源电极、第三个薄膜晶体管的源电极、及第四个薄膜晶体管的漏电极连接在一起,并与第二个薄膜晶体管的栅电极和第三个薄膜晶体管的栅电极连接;第三个薄膜晶体管漏电极和第四个薄膜晶体管源电极连接。 The electrostatic discharge protection circuit according to claim 1, wherein: the first electrostatic discharge protection device, a second electrostatic discharge protection device, a third electrostatic discharge protection device having the same structure, respectively, by four thin film transistors, a source electrode of the first thin film transistor is connected to its gate electrode, and forming an electrostatic discharge protection device input terminal; a source electrode of the fourth thin film transistor is connected to its gate electrode, and an output terminal forming an electrostatic discharge protection device; a source electrode of the first thin film transistor and a second thin film transistor connected to the drain electrode; a drain electrode of a thin film transistor, the source electrode of the second thin film transistor, the third a source electrode of the thin film transistor, a drain four second thin film transistor are connected together, and the gate electrode connected to the gate electrode of the second thin film transistor and the third thin film transistor; a third thin film transistor and a fourth drain electrode a source electrode connected to the thin film transistor.
4. 一种液晶显示器,其中包括具有权利要求1至3任一所述的静电放电保护电路的薄膜晶体管阵列基板;所述薄膜晶体管阵列基板与一彩色滤光片基板相对设置,其间注入液晶;所述的彩色滤光片基板或薄膜晶体管阵列基板上形成有一公共电极;所述公共电极与所述静电放电保护电路的主公共电极配线电连接。 A liquid crystal display, including a thin film transistor array substrate of an electrostatic protection circuit according to any one of claims 1 to 3, discharge; the thin film transistor array substrate and a color filter substrate disposed opposite to the liquid crystal injected therebetween; forming the color filter substrate or a TFT array substrate on which a common electrode; the common electrode is connected to the main common electrode wiring electrostatic discharge protection circuit electrically.
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