CN101281935A - Method for measuring silicon solar cell junction depth - Google Patents
Method for measuring silicon solar cell junction depth Download PDFInfo
- Publication number
- CN101281935A CN101281935A CNA2008100377252A CN200810037725A CN101281935A CN 101281935 A CN101281935 A CN 101281935A CN A2008100377252 A CNA2008100377252 A CN A2008100377252A CN 200810037725 A CN200810037725 A CN 200810037725A CN 101281935 A CN101281935 A CN 101281935A
- Authority
- CN
- China
- Prior art keywords
- weight
- solar cell
- junction depth
- layer
- silicon solar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 46
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 46
- 239000010703 silicon Substances 0.000 title claims abstract description 46
- 238000000034 method Methods 0.000 title claims abstract description 37
- 210000004692 intercellular junction Anatomy 0.000 title claims abstract description 10
- 210000004027 cell Anatomy 0.000 claims abstract description 23
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 23
- 230000003647 oxidation Effects 0.000 claims abstract description 21
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 238000009792 diffusion process Methods 0.000 claims description 32
- 238000005259 measurement Methods 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- VWDWKYIASSYTQR-UHFFFAOYSA-N sodium nitrate Chemical group [Na+].[O-][N+]([O-])=O VWDWKYIASSYTQR-UHFFFAOYSA-N 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 239000003792 electrolyte Substances 0.000 claims description 3
- 230000003628 erosive effect Effects 0.000 claims description 3
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims description 3
- 235000010344 sodium nitrate Nutrition 0.000 claims description 3
- 239000004317 sodium nitrate Substances 0.000 claims description 3
- 238000012546 transfer Methods 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052698 phosphorus Inorganic materials 0.000 abstract description 2
- 239000011574 phosphorus Substances 0.000 abstract description 2
- 238000004364 calculation method Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000000691 measurement method Methods 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 238000005303 weighing Methods 0.000 abstract 1
- 229960002050 hydrofluoric acid Drugs 0.000 description 7
- 238000012360 testing method Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000001172 regenerating effect Effects 0.000 description 2
- 208000003028 Stuttering Diseases 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005686 electrostatic field Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 208000001491 myopia Diseases 0.000 description 1
- 230000004379 myopia Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The invention relates to a measuring method for a silicon solar cell junction depth, which belongs to field of silicon solar cell performance parameter measurement method. The measuring method measures and calculates the silicon solar cell junction depth by employing anode oxidation method and differential weighing calculation method, and includes steps: measuring weight of uneroded phosphorus diffused layer silicon substrate namely cell sheet and square resistance, oxidizing surface of the silicon substrate by the anode oxidation method to obtain a oxidation layer; etching the generated oxidation layer by hydrofluoric acid and measuring the square resistance, repeating the upper step until the square resistance becomes smaller, weighting the silicon substrate. Difference value of the weight and the weight measured at beginning is weight of the diffused layer, average depth of the diffused layer namely the cell junction depth can be obtained through dividing the weight difference value by density of the diffused layer and area of the eroded diffused layer.
Description
Technical field
The present invention relates to a kind of method of measurement of silicon solar cell junction depth, belong to silicon solar cell performance parameter method of measurement technical field.
Background technology
In the deficient gradually current society of the energy, people are badly in need of finding a kind of regenerative resource to replace non-regenerative resource.As everyone knows, the sun has given the earth innumerable geothermal flow, thus people target directing the sun.
Making for silicon solar cell, p-n junction is battery " heart ", why solar cell can produce electricity is the electrostatic field of utilizing p-n junction, with electronics and hole to separating, electronics concentrates on one side, the hole concentrates on another side, thereby reaches the purpose of generating, so the quality of p-n junction will directly have influence on the quality of solar cell performance.In the production process of silicon solar cell, generally adopt phosphorus source diffusion method, promptly carry phosphorus oxychloride with nitrogen, under high temperature and aerobic environment,, and then diffuse in the silicon chip by displacement reaction.The degree of depth of diffusion just junction depth is very big to the effectiveness affects of solar cell, the too dark or too shallow life-span that all can reduce charge carrier of junction depth, influence its efficient, and the efficient of wanting to improve battery just must have suitable junction depth.And the prerequisite of control junction depth can be measured junction depth exactly.The method of measurement junction depth is mostly polished the method for chip junction depth from measurement at present, as development process, and interferometric method etc.Solar cell has the characteristics of himself with respect to the polishing chip, and that is exactly:
1, its junction depth is superficial, less than 0.5 micron.
2, on its surface, owing to will reduce reflection of light, so be matte or pyramid structure, pyramidal height is 2～4 microns.
In the process of diffusion, the PN junction of usual chip is a level, and chip surface polishes, and concerning silicon solar cell, phosphorus atoms enters silicon chip from pyramidal side diffusion, and this has just caused certain difficulty to measurement, based on these characteristics, just must seek new method measures junction depth.
Summary of the invention
The present invention has adopted anode oxidation method in conjunction with the heavy method of difference the junction depth of silicon solar cell to be measured.
The method of measurement of a kind of silicon solar cell junction depth of the present invention is characterized in that having following step:
The silicon solar cell of silicon chip that a. will have phosphorus-diffused layer is as tested object; At first use ultrasonic waves for cleaning phosphorus-diffused layer silicon chip, residual original oxide layer when eroding phosphorous diffusion with hydrofluoric acid then; Weight and square resistance that measure described phosphorus-diffused layer silicon chip this moment also is the battery sheet;
B. then come silica substrate surface with anode oxidation method; Oxidation erodes the oxide layer of generation with hydrofluoric acid after 1 minute, measure its square resistance subsequently; Reoxidize, measure again, so repeat repeatedly after, can find that square resistance diminishes by becoming to transfer to greatly suddenly gradually; When square resistance diminishes, claim its weight; This weight with claim at the beginning the difference of weight be exactly the weight of diffusion layer; This weight difference divided by the density of diffusion layer and the area of the diffusion layer that erodes, is just obtained the mean depth of diffusion layer, also promptly is exactly the junction depth of battery sheet.
Described anode oxidation method is to be negative electrode with the copper sheet, and silicon chip also is that the battery sheet is an anode, and electrolyte is sodium nitrate solution; Power supply is the DC power supply of 60 ± 15V.
The principle that the present invention measures solar cell junction depth is as follows:
Because the PN junction of silicon solar cell is not a horizontal direction, and the state on silicon chip surface is unfavorable for the Direct observation junction depth, therefore has only indirect measurement.Here select for use anode oxidation method to be because the speed of this method oxidized silicon chip is slower, be applicable to the measurement of shallow junction, can accurately erode diffusion layer, even if can erode a little substrate, but the method is measured the error of junction depth less than 300 dusts.Simultaneously can avoid thermal oxidation method to make the consequence that diffusion layer is deepened that oxide layer is brought.Measure the weight of uncorroded battery sheet earlier, measure the weight of the battery sheet that erodes diffusion layer then, both differences are exactly the weight of diffusion layer, again with the area (surface area of entire cell sheet of this weight divided by the density of diffusion layer and the diffusion layer that erodes, be pyramidal lateral area summation) just draw the degree of depth of diffusion layer, just average junction depth.
The inventive method is different from the measurement of usual polishing chip surface area junction depth, because of the usual PN junction that polishes chip is a level; And characteristics of the present invention are to measure the junction depth on the pyramid surface of silicon solar cell.
Description of drawings
The schematic representation of apparatus of Fig. 1 for coming silica substrate surface with anode oxidation method among the present invention.
Fig. 2 is the oxidation schematic diagram with phosphorus-diffused layer silicon chip matte surface.
Embodiment
After now specific embodiments of the invention being described in.
Embodiment 1
The step of the method for measurement of the junction depth of silicon solar cell is as follows in the present embodiment:
(1) with the battery sheet of silicon solar cell, the silicon chip that also promptly has phosphorus-diffused layer carries out ultrasonic waves for cleaning earlier, residual original oxide layer when eroding phosphorous diffusion with hydrofluoric acid then; The weight M that measure described phosphorus-diffused layer silicon chip this moment also is the battery sheet
1And square resistance;
(2) then come silica substrate surface with anode oxidation method; Oxidation unit is referring to Fig. 1; Fig. 1 is for coming the device schematic diagram on the described silicon chip of oxidation surface with anode oxidation method.With copper is negative electrode, also is that the battery sheet is an anode with described silicon chip, and electrolyte is sodium nitrate solution, at DC power supply voltage is to carry out anodic oxidation reactions under the condition of 65V; Oxidation reaction obtained oxide layer after 1 minute, and eroded the oxide layer of generation with hydrofluoric acid, measured its square resistance subsequently; Reoxidize, measure again, so repeat 9 times after, can find in the process that square resistance diminishes by becoming to transfer to greatly suddenly gradually; When square resistance diminishes, claim its weight M
2With this weight M
2With claim at the beginning weight M
1The i.e. (M of difference
1-M
2), promptly be exactly the weight of diffusion layer; This weight difference divided by the density of diffusion layer and the area of the diffusion layer that erodes, is just obtained the mean depth of diffusion layer, also promptly is exactly the junction depth of described battery sheet.
Its computing formula is:
Herein: A is an area factor, and span is 1.0～1.8; L is the length of battery sheet, and W is the stuttering degree of battery sheet, P
SiDensity for silicon diffusion layer.
The area of diffusion layer should be the surface area of entire cell sheet, should be the summation of the measured area on pyramid surface promptly, only is the surface area that myopia is calculated in this formula.
The test result of present embodiment sees the following form 1.
The test result of table 1 present embodiment
| Weight (the M of silicon chip before the oxidation 1) | Square resistance (Ω/mouth) | Weight (the M of silicon chip behind the deoxidation layer 2) | Area (L * W) |
| 0.8578g | 39.372 54.192 68.556 82.006 103.970 116.100 122.640 163.330 142.620 | 0.8571g | 13.5cm 2 |
The point that method of measurement of the present invention should be noted in test process is as follows:
In corrosion process, can only be coated on the diffusion layer side to hydrofluoric acid, and can not whole specimen be immersed in the fluoric acid; Because the cell back face of silicon solar cell also is silicon materials, equally can be oxidized, produce oxide layer, if sample is immersed in the hydrofluoric acid, can erode this one deck equally, the accuracy that final influence is measured.Therefore, in order to improve accuracy, can only erode the oxide layer of the side generation at diffusion layer place.
About having phosphorus-diffused layer silicon base layer matte surface is that the oxidation situation on pyramid surface is referring to Fig. 2.
Method of measurement of the present invention can be applicable to measure the junction depth of silicon solar cell, and for diffusion technology provides required data message, for controlling and improving diffusion technology, the efficient that improves solar cell has positive effect.
Claims (2)
1. the method for measurement of a silicon solar cell junction depth is characterized in that having following step:
The silicon solar cell of silicon chip that a. will have phosphorus-diffused layer is as tested object; At first use ultrasonic waves for cleaning phosphorus-diffused layer silicon chip, residual original oxide layer when eroding phosphorous diffusion with hydrofluoric acid then; Weight and square resistance that measure described phosphorus-diffused layer silicon chip this moment also is the battery sheet;
B. then come silica substrate surface with anode oxidation method; Oxidation erodes the oxide layer of generation with hydrofluoric acid after 1 minute, measure its square resistance subsequently; Reoxidize, measure again, so repeat repeatedly after, can find that square resistance diminishes by becoming to transfer to greatly suddenly gradually; When square resistance diminishes, claim its weight; This weight with claim at the beginning the difference of weight be exactly the weight of diffusion layer; This weight difference divided by the density of diffusion layer and the area of the diffusion layer that erodes, is just obtained the mean depth of diffusion layer, also promptly is exactly the junction depth of battery sheet.
2. the method for measurement of a kind of silicon solar cell junction depth as claimed in claim 1 is characterized in that described anode oxidation method is is negative electrode with the copper sheet, and silicon chip also is that the battery sheet is an anode, and electrolyte is sodium nitrate solution; Power supply is the DC power supply of 60 ± 15V.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2008100377252A CN100568546C (en) | 2008-05-20 | 2008-05-20 | The method of measurement of silicon solar cell junction depth |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2008100377252A CN100568546C (en) | 2008-05-20 | 2008-05-20 | The method of measurement of silicon solar cell junction depth |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101281935A true CN101281935A (en) | 2008-10-08 |
| CN100568546C CN100568546C (en) | 2009-12-09 |
Family
ID=40014296
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2008100377252A Expired - Fee Related CN100568546C (en) | 2008-05-20 | 2008-05-20 | The method of measurement of silicon solar cell junction depth |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100568546C (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101833069A (en) * | 2010-05-14 | 2010-09-15 | 沈阳汉锋新能源技术有限公司 | Detection device of thin film conversion rate |
| CN102243984A (en) * | 2010-05-11 | 2011-11-16 | 扬州杰利半导体有限公司 | Method of removing boron spots on chip |
| CN102818980A (en) * | 2012-08-13 | 2012-12-12 | 安阳市凤凰光伏科技有限公司 | Method for testing quality of silicon substrate in solar battery |
| CN103996635A (en) * | 2014-05-16 | 2014-08-20 | 中山大学 | Method for detecting solar battery diffusion evenness |
| CN109360784A (en) * | 2018-09-13 | 2019-02-19 | 安徽钜芯半导体科技有限公司 | A method of removal chip surface Pyrex |
-
2008
- 2008-05-20 CN CNB2008100377252A patent/CN100568546C/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102243984A (en) * | 2010-05-11 | 2011-11-16 | 扬州杰利半导体有限公司 | Method of removing boron spots on chip |
| CN102243984B (en) * | 2010-05-11 | 2013-05-08 | 扬州杰利半导体有限公司 | Method of removing boron spots on chip |
| CN101833069A (en) * | 2010-05-14 | 2010-09-15 | 沈阳汉锋新能源技术有限公司 | Detection device of thin film conversion rate |
| CN102818980A (en) * | 2012-08-13 | 2012-12-12 | 安阳市凤凰光伏科技有限公司 | Method for testing quality of silicon substrate in solar battery |
| CN103996635A (en) * | 2014-05-16 | 2014-08-20 | 中山大学 | Method for detecting solar battery diffusion evenness |
| CN103996635B (en) * | 2014-05-16 | 2017-08-11 | 中山大学 | A kind of method for detecting diffusion uniformity of solar battery |
| CN109360784A (en) * | 2018-09-13 | 2019-02-19 | 安徽钜芯半导体科技有限公司 | A method of removal chip surface Pyrex |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100568546C (en) | 2009-12-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100568546C (en) | The method of measurement of silicon solar cell junction depth | |
| CN103426649B (en) | The preparation method of different carbon fiber/cobalt hydroxide electrodes and solid-liquid composite electrode system | |
| Kray et al. | Investigation of laser‐fired rear‐side recombination properties using an analytical model | |
| Pak et al. | Effect of organic additives on structure and corrosion resistance of MAO coating | |
| CN105633180B (en) | The method of Graphene auxiliary silicon slice wet-method etching | |
| Hui-jun et al. | The effect of temperature on the electrochemical behavior of the V (IV)/V (V) couple on a graphite electrode | |
| Yang et al. | Passivation behavior and corrosion resistance of 904L austenitic stainless steels in static seawater | |
| CN113539871A (en) | Method for detecting stability of chain type PECVD (plasma enhanced chemical vapor deposition) coating process | |
| CN115384685A (en) | Self-adaptive control resident micro-bubble array flow resistance reduction device and preparation method thereof | |
| Duan et al. | Transient voltage-current characteristics: new insights into plasma electrolytic oxidation process of aluminium alloy | |
| Lu et al. | Self-patterned localized metal contacts for silicon solar cells | |
| Das et al. | 20% efficient screen-printed cells with spin-on-dielectric-passivated boron back-surface field | |
| CN103996635B (en) | A kind of method for detecting diffusion uniformity of solar battery | |
| CN109991128A (en) | A kind of the optimization measurement method and device of all-vanadium redox flow battery system mass tranfer coefficient | |
| CN105696083A (en) | Preparation method of solar cell textured structure | |
| CN105633202A (en) | Surface treatment method of solar cell flexible substrate | |
| CN101692062A (en) | Method for measuring impurity concentration distribution in p-n junction on texture of monocrystalline silicon solar cell | |
| CN109811397B (en) | Method for modifying surface of aluminum alloy bipolar plate by using polyacrylonitrile film | |
| Wang et al. | Growth and corrosion behaviors of thin anodic alumina membrane on AA5083 Al-Mg alloy in incalescent medium | |
| Tobail | Porous silicon for thin solar cell fabrication | |
| Ivanov et al. | Dynamic Simulation of Electrochemical Etching of Silicon | |
| CN105631230A (en) | Direct coupling optimization method for solar photovoltaic assembly and SPE (Solid Phase Extraction) electrolytic bath | |
| Li et al. | Influence of nickel silicide thin film on series resistance of silicon solar cells | |
| CN201522397U (en) | Anodic oxidation device for measuring pn junction of crystalline silicon solar cell | |
| CN103557827A (en) | P-type silicon solar cell PN junction depth measuring method based on laser oxidation style |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: SHANXI TIANNENG TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: SHANGHAI UNIVERSITY Effective date: 20101011 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 200444 NO.149, SHANGDA ROAD, BAOSHAN DISTRICT, SHANGHAI TO: 030032 NO.12, ZONGBU AVENUE, HIGH-TECH ZONE, XIAODIAN DISTRICT, TAIYUAN CITY, SHANXI PROVINCE |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20101011 Address after: 030032, No. 12, headquarter street, Xiaodian hi tech Zone, Shanxi, Taiyuan Patentee after: Shanxi Tianneng Technology Co., Ltd. Address before: 200444 No. 149, upper road, Shanghai, Baoshan District Patentee before: Shanghai University |
|
| C56 | Change in the name or address of the patentee | ||
| CP03 | Change of name, title or address |
Address after: 030032 No. 12, main street, Taiyuan hi tech Zone, Shanxi Patentee after: Shanxi Tianneng Technology Co., Ltd. Address before: 030032, No. 12, headquarter street, Xiaodian hi tech Zone, Shanxi, Taiyuan Patentee before: Shanxi Tianneng Technology Co., Ltd. |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20160718 Address after: 037600 Shuozhou City, Yingxian County Province, the South West of the ring road, the four phase of the solar power Co., Ltd., the 1 phase of the plant Patentee after: Shanxi Jingdu Solar Energy Power Co.,Ltd. Address before: 030032 No. 12, main street, Taiyuan hi tech Zone, Shanxi Patentee before: Shanxi Tianneng Technology Co., Ltd. |
|
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20091209 Termination date: 20170520 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |