CN101276617B - Composite type phase variation recording thin film as well as target material and method for manufacturing the thin film - Google Patents
Composite type phase variation recording thin film as well as target material and method for manufacturing the thin film Download PDFInfo
- Publication number
- CN101276617B CN101276617B CN2007100900842A CN200710090084A CN101276617B CN 101276617 B CN101276617 B CN 101276617B CN 2007100900842 A CN2007100900842 A CN 2007100900842A CN 200710090084 A CN200710090084 A CN 200710090084A CN 101276617 B CN101276617 B CN 101276617B
- Authority
- CN
- China
- Prior art keywords
- target
- phase
- phase change
- dielectric material
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Thermal Transfer Or Thermal Recording In General (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
Abstract
The invention provides a composite phase-varying recoding film and a target material used for manufacturing the film. The target material comprises a TE-containing or Sb-containing phase-varying material with an atom percent of 10% to 50%, and a dielectric material with an atom percent of 50% to 90%, the materials compose the 100% composite phase-varying recoding film or the composite target material; the invention also provides a target-adhering target material for manufacturing the film, which comprises a dielectric base material and a TE-containing or Sb-containing phase-varying material adhered to the surface of the dielectric base material; the invention further provides a double-target co-sputtering method for performing co-sputtering by using the TE-containing or Sb-containing phase-varying material target material and a dielectric base material target material.
Description
Technical field
The present invention is relevant for a kind of phase change recording sheet, refers to a kind of how compound phase change recording sheet of rice with stable crystalline speed especially, and its crystalline rate does not change with film thickness and has significant change.
Background technology
General phase change optical disk or recording medium are with multilayer film such as dielectric material film, phase change recording film, dielectric material film and metal films, be sputtered in regular turn on the PC substrate with groove track, and cover a resin bed again on metal film.
The principle of phase change optical disk is with the laser light illumination disc, and phase change recording film material is changed between crystallization phase and noncrystalline phase structure, and by crystallization phase and noncrystalline phase reflection differences with the identification digital signal.When writing data, phase change optical disk is to use the high-power laser pulse irradiation, make phase change recording film local melting, and cool off fast and form noncrystalline phase structure, it then is with the low power laser pulse irradiation that phase change optical disk is eliminated data, causes the crystallization again of phase change recording film part.
Can accomplish that in order to make phase change optical disk the data of low-power, short pulse write and eliminate action, and what possess some writes the wiping number of times repeatedly, and the crystallization phase of phase change recording film and the refractive index difference of noncrystalline phase structure must be high to tangible reflectivity correlative value can be arranged.Yet if desire to avoid thermal diffusion problem, its recording layer must be pulled in up and down between dielectric layer by folder, so present phase change optical disk must be multi-layer film structure, need carry out thin-film-coating program repeatedly during manufacturing, so manufacture process is comparatively loaded down with trivial details, also improve required man-hour thereupon.
Moreover at present the crystallization rate of phase change recording materials has absolute relation with the thickness of record layer film, please refer to shown in Figure 7, for scholars such as Yung-Sung Hsu Proceedings of SPIEVol.5380 periodical delivered for Sb
71Te
29The temperature variant analysis result of reflectivity can be found by Fig. 7 under different film thicknesses, and along with the film thickness difference, the slope of each curve turning point also changes thereupon, and promptly representing crystalline rate is that variation with film thickness changes.Because the recording layer of phase change optical disk needs accurately its crystallization rate of control, therefore make in the process of recording layer with existing phase change recording materials, the recording layer thickness of moulding that accurately control is desired, just can control crystallization speed fully, to obtain required finished product, so cause existing processing procedure smartly to control, degree of requirement is also higher, thereby has increased manufacturing cost.
Summary of the invention
Because the multi-layer film structure of existing phase change optical disk has the comparatively loaded down with trivial details and manufacturing cost problem of higher of processing procedure, the object of the present invention is to provide the compound phase change recording sheet of a kind of how rice, it adopts single layer structure and can reduce manufacturing cost, and has stable crystalline rate.
A time purpose of the present invention is to provide target and the method in order to make this film, and it can be for coating the how compound phase change recording sheet of rice that this has stable crystalline speed.
For reaching the above object, compound phase change recording sheet of the present invention comprises containing Te or containing the Sb phase-transition material and the dielectric material of an atomic percent 50% to 90% of an atomic percent 10% to 50%, and above-mentioned material constitutes 100% the how compound phase change recording sheet of rice.
The present invention in order to make this how the composite target material of the compound phase change recording sheet of rice comprise containing Te or containing the Sb phase-transition material and the dielectric material of an atomic percent 50% to 90% of an atomic percent 10% to 50%, above-mentioned material constitutes 100% composite target material.
The present invention in order to make this how the subsides target target of the compound phase change recording sheet of rice comprise that a dielectric material base material and fits in containing Te or containing the Sb phase-transition material of dielectric material substrate surface.
The present invention in order to make this how the common method for sputtering of two targets of the compound phase change recording sheet of rice be to contain Te or to contain Sb phase-transition material target and the dielectric material target carries out sputter jointly.
Preferably, contain Te or contain the Sb phase-transition material and be selected from GeSbTe, AgInSbTe, SbTe, GaInSbTe and GeTe.
Preferably, dielectric material is selected from Ta
2O
5, Si
3N
4, ZnS, SiO
2And ZnS-SiO
2Potpourri.
The compound phase change recording sheet of how rice with stable crystalline speed of the present invention, its crystalline rate does not have remarkable change with change in film thickness, therefore when being coated with the compound phase change recording sheet of how rice of the present invention, need not carry out excessively smart control for processing procedure, can coat the recording layer film of required crystalline rate, significantly reduce manufacturing cost.In addition, compound phase change recording sheet of the present invention is a single layer structure, and only once the program of being coated with can be finished, and therefore can significantly simplify the manufacture process of phase change recording medium, shortens and makes needed man-hour and cost.
Description of drawings
Fig. 1 pastes the process flow diagram that the target method for sputtering is made film of the present invention for utilizing.
Fig. 2 is for utilizing two targets process flow diagram of method for sputtering making film of the present invention altogether.
Fig. 3 utilizes the composite target material method for sputtering to make the process flow diagram of film of the present invention.
Fig. 4 is the micro-organization chart of film of the present invention.
Fig. 5 for film of the present invention under difference intensification condition reflectivity with variation of temperature.
Fig. 6 for film of the present invention under different film thicknesses reflectivity with variation of temperature.
Fig. 7 for existing phase-transition material film under different film thicknesses reflectivity with variation of temperature.
The primary clustering symbol description
10 films
11 contain Te or contain the Sb phase-transition material
12 dielectric materials
20 paste target target 21 thin slices
22 base materials
31 contain Te or contain Sb phase-transition material target
32 dielectric material targets
41 contain Te or contain Sb phase-transition material base material
42 dielectric material base materials
43 composite target materials
Embodiment
Please refer to shown in Figure 1, the compound phase change recording sheet 10 of how rice with stable crystalline speed of the present invention comprise an atomic percent 10% to 50% contain Te or contain Sb phase-transition material 11 and with the dielectric material 12 of an atomic percent 50% to 90%, above material constitutes 100% the how compound phase change recording sheet 10 of rice; Wherein, contain Te or contain Sb phase-transition material 11 and can be phase-transition materials such as GeSbTe, AgInSbTe, SbTe, GaInSbTe and GeTe; Dielectric material 12 can be Ta
2O
5, Si
3N
4, ZnS, SiO
2Deng with and mixture material.
The compound phase change recording sheet 10 of how rice with stable crystalline speed of the present invention can adopt paste target target sputter, two target altogether methods such as sputter and composite target material sputter make.
Please refer to shown in Figure 1, pasting target target sputter is to make subsides target target 20 to contain Te or to contain Sb phase-transition material 11 with dielectric material 12 earlier, wherein dielectric material is a base material 22, contain Te or contain Sb phase-transition material thin slice 21 and fit in dielectric material surface, paste the target target with this afterwards and carry out sputter on a substrate, as the PC substrate that phase change optical disk uses, then can make the how compound phase change recording sheet 10 of rice that this has stable crystalline speed.Contain Te or contain the Sb phase-transition material and can be phase-transition materials such as GeSbTe, AgInSbTe, SbTe, GaInSbTe and GeTe; Dielectric material can be Ta
2O
5, Si
3N
4, ZnS, SiO
2Deng with and composition thereof dielectric material.
Please refer to shown in Figure 2, two targets sputter altogether are to carry out sputter jointly to contain Te or to contain Sb phase-transition material target 31 on a substrate with dielectric material target 32, PC substrate as the phase change optical disk use, by the sputter output power of the two targets of regulation and control respectively, can make the how compound phase change recording sheet 10 of rice that this has stable crystalline speed.Wherein, contain Te or contain Sb phase-transition material 11 and can be materials such as GeSbTe, AgInSbTe, SbTe, GaInSbTe and GeTe; Dielectric material 12 can be Ta
2O
5, Si
3N
4, ZnS, SiO
2Deng with and mixture material.
Please refer to shown in Figure 3, the composite target material sputter is to make composite target material 43 to contain Te or to contain Sb phase-transition material base material 41 with dielectric material base material 42 earlier, this target 43 contains containing Te or containing Sb phase-transition material 11 and the dielectric material 12 of atomic percent 50% to 90% of atomic percent 10% to 50%, more than constitute 100% composite target material 43, carry out sputter on a substrate with this composite target material 43 afterwards, as the PC substrate that phase change optical disk uses, can make the how compound phase change recording sheet of rice that this has stable crystalline speed.Wherein, contain Te or contain Sb phase-transition material 11 and can be materials such as GeSbTe, AgInSbTe, SbTe, GaInSbTe and GeTe; Dielectric material 12 can be Ta
2O
5, Si
3N
4, ZnS, SiO
2Deng with and mixture material.The following example is used for exemplary illustration the present invention, and is not intended to limit the scope of the invention by any way.
Paste the manufacture method of target sputter:
Present embodiment is with SiO
2As the base material that pastes the target target, the AgInSbTe thin slice fits in substrate surface, and pasting the target area ratio and be AgInSbTe, to account for the long-pending area percentage of substrate surface be 30%; Carry out the radio frequency sputter afterwards, sputter power is 100W, and sputter gas is Ar, and specific gas flow rate is 10sccm, working pressure is 3mtorr, can make 20,30,40,50,60,90 and the how compound phase change recording sheet of rice with stable crystalline speed of many groups such as 100nm thickness at last.Please refer to shown in Figure 4ly, be the micro-organization chart of the film that this enforcement coated, can be found by Fig. 4, how the AgInSbTe phase-transition material forms that the particulate of metrical scale is uniformly distributed in SiO
2In the dielectric material base material.
Two targets are the manufacture method of sputter altogether:
Present embodiment is with AgInSbTe or GeSbTe target and SiO
2Or ZnS-SiO
2Target carries out the two targets of radio frequency sputter altogether, and the sputter power of AgInSbTe or GeSbTe target is 25W to 50W, SiO
2Or ZnS-SiO
2The sputter power of target is 100W to 150W, sputter gas is Ar, specific gas flow rate is 10sccm, and working pressure is 3mtorr, can make 20,30,40,50,60,90 and the how compound phase change recording sheet of rice with stable crystalline speed of many groups such as 100nm thickness at last.
The manufacture method of composite target material sputter:
Present embodiment is with Ta
2O
5, Si
3N
4, ZnS, SiO
2With and composition thereof wait dielectric material and phase-transition materials such as GeSbTe, AgInSbTe, SbTe, GaInSbTe and GeTe to make composite target material in the mode of powder metallurgy, 400 ℃ to 1000 ℃ of powder metallurgy temperature, pressure 4500psi to 15000psi carries out sputter with this composite target material afterwards.
Reflectance varies under the different intensification conditions:
Please refer to shown in Figure 5ly, it shows AgInSbTe and SiO
2The reflectivity of the how compound phase change recording sheet of rice under difference intensification condition with variation of temperature, the speed that temperature raises is respectively 40 ℃/min and 60 ℃/min.Can find this AgInSbTe and SiO by Fig. 5
2Compound phase change recording sheet have suitable significant reflection rate near 200 ℃ of temperature the time and change, the single layer structure of the how compound phase change recording sheet of rice therefore of the present invention also can provide suitable significant reflection rate difference, have the potentiality of improving existing phase change optical disk multi-layer film structure, can significantly simplify the complicated processes that existing processing procedure needs multilayer to be coated with, shorten the man-hour of making.
The reflectance varies of different film thicknesses:
Please refer to shown in Figure 6ly, it shows AgInSbTe and SiO
2The reflectivity of compound phase change recording sheet under different film thicknesses with variation of temperature, film thickness is respectively 20nm and 60nm.Can find by Fig. 6, the film of two different film thicknesses produces tangible reflectance varies near 200 ℃ of temperature, and two films are also quite approaching at the slope at this place, represent the compound phase change recording sheet of how rice of the present invention under different film thicknesses, all to have stable crystalline rate, therefore when being coated with film of the present invention, need not carry out excessive essence control to processing procedure, so can significantly reduce manufacturing cost.
Claims (12)
1. a phase change recording sheet is characterized in that: comprise containing Te or containing the Sb phase-transition material and the dielectric material of an atomic percent 50% to 90% of an atomic percent 10% to 50%, the phase change recording sheet of above-mentioned material formation 100%.
2. phase change recording sheet as claimed in claim 1 is characterized in that: containing Te or containing the Sb phase-transition material wherein is selected from GeSbTe, AgInSbTe, SbTe, GaInSbTe and GeTe.
3. phase change recording sheet as claimed in claim 1 or 2 is characterized in that: dielectric material wherein is selected from Ta
2O
5, Si
3N
4, ZnS, SiO
2With and composition thereof.
4. one kind in order to make the subsides target target of film as claimed in claim 1, it is characterized in that: comprise that a dielectric material base material and fits in containing Te or containing the Sb phase-transition material of dielectric material substrate surface.
5. subsides target target as claimed in claim 4 is characterized in that: containing Te or containing the Sb phase-transition material wherein is selected from the group that GeSbTe, AgInSbTe, SbTe, GaInSbTe and GeTe constitute.
6. as claim 4 or 5 described subsides target targets, it is characterized in that: dielectric material wherein is selected from Ta
2O
5, Si
3N
4, ZnS, SiO
2With and composition thereof.
7. one kind in order to make the composite target material of film as claimed in claim 1, it is characterized in that: comprise containing Te or containing the Sb phase-transition material and the dielectric material of an atomic percent 50% to 90% of an atomic percent 10% to 50%, above-mentioned material constitutes 100% composite target material.
8. composite target material as claimed in claim 7 is characterized in that: containing Te or containing the Sb phase-transition material wherein is selected from GeSbTe, AgInSbTe, SbTe, GaInSbTe and GeTe.
9. as claim 7 or 8 described composite target materials, it is characterized in that: dielectric material wherein is selected from Ta
2O
5, Si
3N
4, ZnS, SiO
2With and composition thereof.
10. one kind in order to two targets of making film according to claim 1 method for sputtering altogether, it is characterized in that: to contain Te or to contain Sb phase-transition material target and the dielectric material target carries out sputter jointly.
11. as claimed in claim 10 pair of target is total to method for sputtering, it is characterized in that: containing Te or containing the Sb phase-transition material wherein is selected from GeSbTe, AgInSbTe, SbTe, GaInSbTe and GeTe.
12. be total to method for sputtering as claim 10 or 11 described pairs of targets, it is characterized in that: dielectric material wherein is selected from Ta
2O
5, Si
3N
4, ZnS, SiO
2With and composition thereof.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007100900842A CN101276617B (en) | 2007-03-26 | 2007-03-26 | Composite type phase variation recording thin film as well as target material and method for manufacturing the thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007100900842A CN101276617B (en) | 2007-03-26 | 2007-03-26 | Composite type phase variation recording thin film as well as target material and method for manufacturing the thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101276617A CN101276617A (en) | 2008-10-01 |
| CN101276617B true CN101276617B (en) | 2010-10-13 |
Family
ID=39995950
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2007100900842A Expired - Fee Related CN101276617B (en) | 2007-03-26 | 2007-03-26 | Composite type phase variation recording thin film as well as target material and method for manufacturing the thin film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101276617B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102569644B (en) * | 2010-12-15 | 2014-03-12 | 中国科学院上海微系统与信息技术研究所 | Sb2Tey-Si3N4 composite phase change material for phase change memory and preparation method thereof |
| CN102169958B (en) * | 2011-04-29 | 2013-07-10 | 中国科学院上海微系统与信息技术研究所 | Nanocomposite phase-change material, preparation method and application thereof in phase-change memory |
| CN103305790A (en) * | 2013-05-09 | 2013-09-18 | 上海大学 | Preparation method of CdS/SiO2 nanometer transparent composite film |
| CN104409333A (en) * | 2014-12-12 | 2015-03-11 | 中国科学院上海微系统与信息技术研究所 | Coupled plasma etching method for phase-change material GeTe |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1632870A (en) * | 2004-12-21 | 2005-06-29 | 中国科学院上海光学精密机械研究所 | High-density enhancement type read-only digital optical disk |
| CN1652226A (en) * | 2004-02-06 | 2005-08-10 | 达信科技股份有限公司 | Phase change optical recording medium and its mfg. method |
-
2007
- 2007-03-26 CN CN2007100900842A patent/CN101276617B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1652226A (en) * | 2004-02-06 | 2005-08-10 | 达信科技股份有限公司 | Phase change optical recording medium and its mfg. method |
| CN1632870A (en) * | 2004-12-21 | 2005-06-29 | 中国科学院上海光学精密机械研究所 | High-density enhancement type read-only digital optical disk |
Non-Patent Citations (1)
| Title |
|---|
| JP特开平5-124353A 1993.05.21 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101276617A (en) | 2008-10-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1287370C (en) | Disposable write optical recording medium | |
| WO2006132076A1 (en) | Information recording medium and method for producing the same | |
| CN101276617B (en) | Composite type phase variation recording thin film as well as target material and method for manufacturing the thin film | |
| EP1959442B1 (en) | Optical information recording medium | |
| CN102339615B (en) | Optical record medium | |
| CN101336453B (en) | Information recording medium, method for producing same, and apparatus for producing same | |
| CN101303867B (en) | Optical storage medium and method of producing optical storage medium | |
| JP4271051B2 (en) | Phase change information recording medium and sputtering target | |
| JP5016295B2 (en) | Sputtering target and write once optical recording medium | |
| CN102262884A (en) | Optical recording medium and manufacturing method thereof | |
| JP2850713B2 (en) | Optical information recording medium | |
| US20080220197A1 (en) | Phase-change recording film with stable crystallization rate, target and process for producing the phase-change recording film | |
| CN102884577B (en) | Information recording carrier and manufacture method thereof | |
| JPH11328730A (en) | Optical information recording medium and its production | |
| CN109493887B (en) | Recording layer, optical information recording medium, and sputtering target | |
| JP2003173585A (en) | Phase change optical disk and its manufacturing method | |
| JP2004164686A (en) | Optical information recording medium and its manufacturing method | |
| JPH09282713A (en) | Optical information recording medium | |
| CA2355654A1 (en) | Phase change-type optical recording medium and process for manufacturing the same | |
| JPH10289478A (en) | Optical information recording medium and its production | |
| US20020150716A1 (en) | Data storage media | |
| JP3246350B2 (en) | Optical information recording medium | |
| JPH11232698A (en) | Medium for optical information recording and manufacture thereof | |
| JPH08180458A (en) | Optical information recording medium | |
| JP3246244B2 (en) | Optical information recording medium |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20101013 Termination date: 20150326 |
|
| EXPY | Termination of patent right or utility model |