CN101275065B - Lapping liquid - Google Patents

Lapping liquid Download PDF

Info

Publication number
CN101275065B
CN101275065B CN2008100867783A CN200810086778A CN101275065B CN 101275065 B CN101275065 B CN 101275065B CN 2008100867783 A CN2008100867783 A CN 2008100867783A CN 200810086778 A CN200810086778 A CN 200810086778A CN 101275065 B CN101275065 B CN 101275065B
Authority
CN
China
Prior art keywords
lapping liquid
general formula
grinding
compound
benzotriazole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN2008100867783A
Other languages
Chinese (zh)
Other versions
CN101275065A (en
Inventor
上村哲也
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Publication of CN101275065A publication Critical patent/CN101275065A/en
Application granted granted Critical
Publication of CN101275065B publication Critical patent/CN101275065B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

The invention provides a grinding liquid which adopts grinding liquid of solid mill grain applied in blocking CMP for grinding the blocking layer formed by blocking metal materials. The grinding liquid can sustain high grinding speed to the grinded film when grinding the blocking layer, capable of completely restricting grinding speed to Low-k film of low permittivity. The grinding liquid is used for grinding blocking layer of a semiconductor integrated circuit, containing antistatic agent.

Description

Lapping liquid
Technical field
The present invention relates to be used for the lapping liquid of the manufacturing process of semiconducter device, in detail, relate to the lapping liquid that is used to grind mainly the blocking layer that constitutes by the barrier metal material in the planarization in the cloth line procedures of semiconducter device.
Background technology
In the exploitation of semiconducter device that with semiconductor integrated circuit (below be designated as LSI) is representative,, miniaturization and the densification of stackedization, highly integrated needs based on wiring never were interrupted in order to realize miniaturization, high speed.As the technology that reaches this purpose, what adopted is cmp various technology such as (Chemical Mechanical Polishing below are designated as CMP) in the past.This CMP is the flattening surface of implementing machined membrane such as interlayer dielectric, the formation of plug (plug), the isochronous necessary technology of formation of embed type metal line, can implement smoothing to substrate by this technology, remove metallic film unnecessary when forming wiring, remove blocking layer unnecessary on the insulating film etc.
In the ordinary method of CMP, after the abrasive disk (platen) of circle is gone up the stickup grinding pad, with lapping liquid dipping grinding pad surface, push substrate (wafer) surface to grinding pad afterwards, and apply the pressure (grinding pressure) of regulation at its back side, abrasive disk and substrate are rotated, make substrate surface reach planarization by the mechanical friction that produces.
When semiconducter device such as manufacturing LSI, on a plurality of layers, form fine wiring, when on each layer, forming metal line such as Cu, need be pre-formed barrier metal layers such as Ta or TaN, Ti, TiN, diffuse to the adaptation of interlayer dielectric or raising wiring material and substrate etc. to prevent wiring material.
The formation of each wiring layer comprises following operation usually: at first remove the CMP unnecessary wiring material, metallic membrane (hereinafter referred to as " metallic membrane CMP ") that forms through plating method, this operation can carry out or be divided into a plurality of stages carrying out with a stage.Ensuing operation is the CMP (below be designated as " barrier metal CMP ") that removes the barrier metal material (barrier metal) that is exposed to the surface thus.But metallic membrane CMP might cause following problem: form surface depression (dishing) as the wiring portion over-lapping, or further produce the problems such as (erosion) of erosion.
For reducing this surface depression, among the barrier metal CMP that after metallic membrane CMP, carries out, need to adjust the grinding rate of metal line part and the grinding rate of barrier metal part, the final few wiring layer of the discrepancy in elevation that forms surface depression or erosion etc.Promptly, in barrier metal CMP, when the grinding rate of barrier metal or interlayer dielectric compare with the metal line material relative hour, owing to be easy to generate that wiring portion such as is ground fast at the surface depression and as its result's erosion, so the grinding rate of barrier metal and interlayer dielectric is advisable more greatly.This is because not only can improve the treatment capacity of barrier metal CMP this moment, want high requirement but also the grinding rate that can satisfy barrier metal and insulating film layer is relative, these speed want relatively high reason be based on above-mentioned reason in fact the surface depression result from metallic membrane CMP mostly.
The metal abrasive solution that is used for CMP contains abrasive particle (aluminum oxide, silicon-dioxide) and oxygenant (for example being hydrogen peroxide, persulfuric acid) usually.Its basic mechanism is considered to: by removing this oxide film thereon with abrasive particle behind the oxygenant oxidation metallic surface, grind thus.
But, when using this lapping liquid that contains solid abrasive particles to carry out CMP, following problem might take place: the phenomenon (erosion) that phenomenon (シ ニ Application グ), the abrasive metal face bend that is all ground by transition as grinding wound (scratch), abrasive surface is the phenomenon (dishing) of ware shape, the isolator between metal line is become the ware shape by a plurality of wiring metal face bends in transition grinding back etc.
In addition, use contains the lapping liquid of solid abrasive particles can there are the following problems, promptly, the flushing operation of carrying out usually becomes complicated in order to remove the lapping liquid that remains in semiconductor surface after grinding, and need carry out settlement separately etc. to solid abrasive particles for handling liquid (waste liquid) after this flushing, so the cost aspect has problems.
For the aforesaid lapping liquid that contains solid abrasive particles, carried out following various researchs so far.
For example proposed under the situation of produce to grind hindering hardly, to carry out grinding at a high speed for the CMP abrasive of purpose and Ginding process (for example referring to Patent Document 1), the abrasive composition that has improved the cleaning among the CMP and Ginding process (for example, refer to Patent Document 2), and be (for example, the referring to Patent Document 3) such as abrasive compositions of purpose with the aggegation that prevents to grind abrasive particle.
[patent documentation 1] spy opens the 2003-17446 communique
[patent documentation 2] spy opens the 2003-142435 communique
[patent documentation 3] spy opens the 2000-84832 communique
In addition, use the insulating film that specific inductivity is lower and intensity is little (Low-k film) to become a kind of trend gradually in recent years.This be because in most advanced equipment the close together between wiring, electrically bad between can causing connecting up when therefore using the high insulating film of specific inductivity.But such Low-k film exists in because of intensity is very little in the processing of CMP might be by the problem of skiving excessively.
At such problem, will be when also occur grinding the blocking layer so far for being maintained high grinding rate by the grinding rate of grinding film and can fully suppressing technology for the grinding rate of the Low-k film of low-k.
Summary of the invention
Therefore, the purpose of this invention is to provide a kind of abrasive, it has been to use the lapping liquid that stops the solid abrasive particles of using among the CMP, among the described CMP of stopping the blocking layer that is made of the barrier metal material is ground, this abrasive can be when grinding the blocking layer kept high grinding rate by grinding film, and can fully suppress grinding rate for the Low-k film of low-k.
The inventor etc. have carried out the result of extensive and deep research, and discovery can solve the problems referred to above by making lapping liquid contain antistatic agent, thereby has finished the present invention.
That is, the invention provides the lapping liquid of following (1)～(10) and the Ginding process of (11).
(1) a kind of lapping liquid is used for the blocking layer of grinding semiconductor unicircuit, wherein, contains antistatic agent.
Sometimes it is become " lapping liquid of the 1st mode of the present invention " below.
(2) a kind of lapping liquid is used for the blocking layer of grinding semiconductor unicircuit, wherein, contains the represented compound of following general formula (1).
Sometimes it is become " lapping liquid of the 2nd mode of the present invention " below.
In addition, also sometimes with the of the present invention the 1st and the lapping liquid of the 2nd mode be called " lapping liquid of the present invention " altogether.
General formula (1)
Figure S2008100867783D00031
In the formula, R 1, R 2It is at least a in 6～30 alkyl, thiazolinyl, cycloalkyl, aryl, aralkyl and the polyoxyethylene chain (EO) that expression independently of one another is selected from hydrogen atom, carbonatoms, R 1, R 2Can interosculate, a is the integer more than 1.
(3), wherein, be 0.005～50g/L with respect to the total mass of lapping liquid with the compound concentrations of described general formula (1) expression as above-mentioned (2) described lapping liquid.
(4) as each the described lapping liquid in above-mentioned (1)～(3), wherein, further contain inhibitor and colloidal silica, pH is 2.5～5.0.
(5) as above-mentioned (4) described lapping liquid, wherein, the concentration of described colloidal silica is 0.5～15 quality % with respect to the total mass of lapping liquid.
(6) as above-mentioned (4) or (5) described lapping liquid, wherein, the original median size of described colloidal silica is in the scope of 20～50nm.
(7) as each the described lapping liquid in above-mentioned (4) to (6), wherein, described inhibitor is for being selected from 1,2,3-benzotriazole, 5,6-dimethyl-1,2,3-benzotriazole, 1-(1,2-dicarboxyl ethyl) benzotriazole, 1-[N, two (hydroxyethyl) amino methyls of N-] at least a compound in benzotriazole and 1-(methylol) benzotriazole.
(8) as each the described lapping liquid in above-mentioned (1)～(7), wherein, further contain two quaternary ammonium cations of useful following general formula (2) expression or the single cropping ammonium cation of representing with following general formula (3),
General formula (2)
Figure S2008100867783D00041
General formula (3)
Figure S2008100867783D00042
In general formula (2) or the general formula (3), R 1～R 7It is at least a in 1～20 alkyl, thiazolinyl, cycloalkyl, aryl and the aralkyl that expression independently of one another is selected from carbonatoms, R 1～R 6In 2 groups can mutually combine, it is at least a in 1～10 alkylidene group, alkenylene, cycloalkylidene, arylidene and the group that makes up them that X represents to be selected from carbonatoms.
(9) as each the described lapping liquid in above-mentioned (1) to (8), wherein, further contain compound, and this compound with carboxyl is the compound by following general formula (4) expression with carboxyl,
General formula (4)
R 7——O-R 8——COOH
In the general formula (4), R 7, R 8Represent alkyl independently of one another.R 7And R 8The formation ring texture can mutually combine.
(10) as each the described lapping liquid in above-mentioned (1) to (9), wherein, further contain anion surfactant or cats product.
(11) a kind of Ginding process is characterized in that, in the grinding on the blocking layer of semiconductor integrated circuit, uses each the described lapping liquid in above-mentioned (1)～(10).
The mechanism of action of the present invention is still indeterminate, but can be speculated as follows.
That is, the antistatic agent in the slurry in process of lapping attached to the low-k film by abrasive surface, controlled thus by the electriferous state of abrasive surface.More specifically, the static behaviour avidity by between abrasive surface and between the polishing particles that is attached with antistatic agent descends to some extent.The decline of static behaviour avidity can make grinding pad polishing particles-died down by the physical action between abrasive surface (the physics effect of striking off), thereby has suppressed the grinding rate for low-k film kind.
Lapping liquid of the present invention can maintain high grinding rate with the grinding rate by grinding film when grinding the blocking layer, and can fully suppress the grinding rate for the Low-k film of low-k.
Embodiment
Below the specific embodiment of the present invention is described.
The lapping liquid of first embodiment of the present invention, the lapping liquid for the blocking layer that is used for the grinding semiconductor unicircuit wherein, contains antistatic agent.
" lapping liquid " described in the present invention is not only the lapping liquid of instigating when being used to grind (, Xi Shi lapping liquid) as required, but also comprises the concentrated solution of lapping liquid.So-called concentrated solution or spissated lapping liquid are meant the high lapping liquid of lapping liquid the when concentration ratio of solute is used to grind, and lapping liquid when being used to grind, is used in grinding again after the dilutions such as the water or the aqueous solution.Normally 1～20 volume is doubly for dilution ratio." concentrating " described in this specification sheets and " concentrated solution " mean with user mode compares " dense " and " dense liquid ", belongs to the use of following habitual manifestation, is different from the implication of following evaporation to wait the general term of physics concentration operation.
Below each composition that constitutes lapping liquid of the present invention is elaborated.
[antistatic agent]
The lapping liquid of the 1st mode of the present invention contains antistatic agent.
The antistatic agent that lapping liquid contained of the present invention's the 1st mode, so long as known data (for example, " technology of antistatic material and application " (CMC publication), " oiling learn dictionary lipid surfactant " (ball is kind), " function of tensio-active agent and utilize technology " (popular edition), " tensio-active agent rerum natura performance guide " (technical intelligence association)) in disclosed material, just have no particular limits.
Wherein, from controlling the angle of grinding rate more fully, preferably use the compound of following general formula (1) expression.
General formula (1)
Figure S2008100867783D00061
(in the formula, R 1, R 2It is at least a in 6～30 alkyl, thiazolinyl, cycloalkyl, aryl, aralkyl and the polyoxyethylene chain (EO) that expression independently of one another is selected from hydrogen atom, carbonatoms, R 1, R 2Can interosculate, a is the integer more than 1.)
For general formula (1) expression compound, in the lapping liquid of the 2nd mode of the present invention, be elaborated.
Antistatic agent can use separately separately, perhaps can make up more than 2 kinds and use.
The addition of antistatic agent among the present invention, the lapping liquid when being used to grind (, be the lapping liquid after the dilution under the situation of water or aqueous solution dilution.With following " lapping liquid when being used to grind " synonym), be preferably more than the 0.005g/L and below the 50g/L, more preferably more than the 0.01g/L and below the 30g/L.That is, from the angle of abundant inhibition grinding rate, the addition of antistatic agent is preferably more than the 0.005g/L, never hinders for the angle of the grinding rate of other film kinds and sets out, and is preferably below the 50g/L.
The lapping liquid of the 1st mode of the present invention, can further contain following any composition as required, for example polishing particles, inhibitor, colloidal silica, quaternary ammonium salt, compound, anion surfactant, cats product etc. with carboxyl.
For any composition, in the lapping liquid of the 2nd mode of the present invention, be elaborated.
Each composition that lapping liquid contained of the 1st mode of the present invention can be used alone or two or more kinds may be used.
Then, below the lapping liquid of the 2nd mode of the present invention is described.
The lapping liquid of the 2nd mode of the present invention is used for the blocking layer of grinding semiconductor unicircuit, wherein, contains the represented compound of useful following general formula (1).
General formula (1)
Figure S2008100867783D00071
(in the formula, R 1, R 2It is at least a in 6～30 alkyl, thiazolinyl, cycloalkyl, aryl, aralkyl and the polyoxyethylene chain (EO) that expression independently of one another is selected from hydrogen atom, carbonatoms, R 1, R 2Can interosculate, a is the integer more than 1.)
In the above-mentioned general formula (1), R 1, R 2It is at least a in 6～30 alkyl, thiazolinyl, cycloalkyl, aryl, aralkyl and the polyoxyethylene chain (EO) that expression independently of one another is selected from hydrogen atom, carbonatoms, R 1, R 2Can interosculate, a is the integer more than 1.
It as described carbonatoms 6～30 alkyl, particularly, for example can enumerate decyl, dodecyl, tetradecyl, hexadecyl, octadecyl, eicosyl (icosyl), triacontyl (triaconttyl) etc., wherein, preferred dodecyl, tetradecyl, hexadecyl, octadecyl.
In addition, as described thiazolinyl, preferred carbonatoms is 6～30 group, particularly, for example can enumerate decene base, dodecenyl succinic, tetradecene base, cetene base, vaccenic acid base, eicosylene base, triacontylene base etc., wherein preferred dodecenyl succinic, tetradecene base, cetene base, vaccenic acid base.
As described cycloalkyl, particularly, for example preferred cyclohexyl, alkyl substituted cyclohexyl etc.
As described aryl, particularly, for example can enumerate phenyl, naphthyl etc., wherein, preferred phenyl.
As described polyoxyethylene chain (EO), preferred molecular weight is 100～10,000 scope, and more preferably molecular weight is 200～5,000 scope.
Above-mentioned each group can further have substituting group, as the substituting group that can introduce, for example can enumerate hydroxyl, amino, carboxyl, phosphate, imino-, thiol group, sulfo group, nitro etc.
From suppressing the angle to the grinding rate of target film fully, a in the general formula (1) is the integer more than 1, and from suppressing the angle to the grinding rate of target film more fully, above-mentioned a is preferably 1～50 integer.
Below, preferred concrete example (the exemplary compounds D-1～D-23), but the present invention is not limited to these materials of the represented compound of general formula of the present invention (1) is shown.
Figure S2008100867783D00081
From giving full play to the angle of additive effect, the b among above-mentioned D5～D8, D13～D16 and the D20 is preferably 1～100 integer, more preferably 1～50 integer.
From will the grinding rate when grinding the blocking layer maintain by grinding film higher grinding rate and can more abundant inhibition for the angle of the grinding rate of the Low-k film of low-k, in the compound of general formula (1) expression, preferred D1, D2, D3, D4, D5, D6, D7, D8, D9, D10, D11, D12, D13, D14, D15, D16.The represented compound of general formula (1) can use separately separately, perhaps can make up more than 2 kinds and use.
The addition of the compound that formula of of the present invention (1) is represented, the lapping liquid when being used to grind (, be the lapping liquid after the dilution under the situation of water or aqueous solution dilution.With following " lapping liquid when being used to grind " synonym), be preferably more than the 0.005g/L and below the 50g/L, more preferably more than the 0.01g/L and below the 30g/L.That is, from the angle of abundant inhibition grinding rate, the addition of the compound that general formula (1) is represented is preferably more than the 0.005g/L, never hinders for the angle of the grinding rate of other film kinds and sets out, and is preferably below the 50g/L.
[inhibitor]
As a preferred implementation, can enumerate the lapping liquid of the present invention that contains inhibitor, described inhibitor is adsorbed in by lapped face and forms tunicle, the corrosion of control metallic surface.
As the inhibitor that contains in the lapping liquid of the present invention, preferably contain the heteroaromatic cyclic cpds that has the nitrogen-atoms more than 3 and have the condensed ring structure at intramolecularly.Wherein, " nitrogen-atoms more than 3 " are preferably the atom that constitutes condensed ring, and as such heterocyclic aromatic compound, preferred benzotriazole reaches to introduce in this benzotriazole various substituent derivatives.
As the inhibitor that can use in the present invention, for example can enumerate benzotriazole, 1,2,3-benzotriazole, 5,6-dimethyl-1,2,3-benzotriazole, 1-(1,2-dicarboxyl ethyl) benzotriazole, 1-[N, two (hydroxyethyl) amino methyls of N-] benzotriazole and 1-(methylol) benzotriazole etc.
Wherein, corrosive angle from abundant inhibition wiring, etching reagent is preferably from 1,2,3-benzotriazole, 5,6-dimethyl-1,2,3-benzotriazole, 1-(1,2-two propyloics) benzotriazole, 1-[N, two (hydroxyethyl) amino methyls of N-] select in benzotriazole and 1-(methylol) benzotriazole.
Inhibitor can use separately separately, maybe can make up more than 2 kinds and use.
The quality of the lapping liquid of the addition of inhibitor when being used to grind, it is above and below the 2g/L to be preferably 0.01g/L, and more preferably 0.05g/L is above and below the 2g/L.That is, the angle that the surface depression is enlarged is set out, and the addition of inhibitor is preferably more than the 0.01g/L, and the angle from storage stability is preferably below the 0.2g/L.
[colloidal silica]
As one preferred embodiment, can enumerate the scheme that contains colloidal silica in the lapping liquid of the present invention as at least a portion of abrasive particle.
As this colloidal silica, the colloidal silica that does not preferably contain impurity such as basic metal and obtain through the hydrolysis of organoalkoxysilane in particle inside.On the other hand, can use by removing the colloidal silica that alkali-metal method is made from the silicate base aqueous metal salt, but in this case, the basic metal that remains in particle inside wash-out at leisure goes out, and might bring influence to nonferromagnetic substance.From the viewpoint, the material that more preferably obtains as raw material by the hydrolysis of organoalkoxysilane.
Colloidal silica can use separately separately or can make up more than 2 kinds and use.
The particle diameter of colloidal silica can suitably be selected according to the application target of abrasive particle, is generally about 10～200nm, considers that this particle diameter is preferably the scope of 20～50nm but never make it that angle of hindering takes place to grind.
The quality optimization of the lapping liquid of the content of the colloidal silica in the lapping liquid of the present invention (concentration) when being used to grind is more than the 0.5 quality % and below the 15 quality %, more preferably more than the 3 quality % and below the 12 quality %, be preferably especially more than the 5 quality % and below the 12 quality %.That is, from grind the angle on blocking layer with sufficient grinding rate, the content of colloidal silica is preferably more than the 0.5 quality %, is preferably below the 15 quality % from the angle of storage stability.
In the lapping liquid of the present invention, only otherwise damage effect of the present invention, the abrasive particle beyond then can blended rubber attitude silicon-dioxide.In this case, all the content of the colloidal silica in the abrasive particle is preferably more than the 50 quality %, is preferably especially more than the 80 quality %.The abrasive particle that is contained all is that colloidal silica also can.
As in the lapping liquid of the present invention can with the abrasive particle of colloidal silica and usefulness, for example can enumerate pyrogenic silica, cerium dioxide, aluminum oxide, titanium oxide etc.These are also identical with colloidal silica or on it, below 2 times with the gravel size decision of abrasive particle.
[two quaternary ammonium cations, single cropping ammonium cation]
Lapping liquid of the present invention can further contain at least a (below, also abbreviate " certain cationic " as) that be selected from two quaternary ammonium cations and the single cropping ammonium cation.
Two quaternary ammonium cations that lapping liquid of the present invention can contain, as long as have the structure of 2 level Four nitrogen in chemical structure, just there is no particular limitation.
In addition, the single cropping ammonium cation, as long as contain a level Four nitrogen in chemical structure, just there is no particular limitation.
Consider that from the angle of abundant raising grinding rate certain cationic is preferably two quaternary ammonium cations or single cropping ammonium cation.
As two quaternary ammonium cations, for example can enumerate the represented positively charged ion of following general formula (2).
As the single cropping ammonium cation, for example can enumerate the represented positively charged ion of following general formula (3).
Wherein, consider any one party or both sides in the represented positively charged ion of positively charged ion that preferred following general formula (2) is represented and following general formula (3) from the angle of the abundant raising that reaches grinding rate.
General formula (2)
General formula (3)
Figure S2008100867783D00112
[in general formula (2) or the general formula (3), R 1～R 7It is at least a in 1～20 alkyl, thiazolinyl, cycloalkyl, aryl and the aralkyl that expression independently of one another is selected from carbonatoms, R 1～R 6In 2 groups can interosculate, it is at least a in 1～10 alkylidene group, alkenylene, cycloalkylidene (cycloalkylene), arylidene and the group that makes up them that X represents to be selected from carbonatoms.]
As described carbonatoms is 1～20 alkyl, particularly, for example can enumerate methyl, ethyl, propyl group, butyl, amyl group, hexyl, heptyl, octyl group etc., wherein preferable methyl, ethyl, propyl group, butyl, cyclohexyl.
In addition, be 2～10 group as the preferred carbonatoms of described thiazolinyl, particularly, for example can enumerate ethynyl, propenyl (プ ロ ピ Le) etc.
As described cycloalkyl, particularly, for example can enumerate cyclohexyl, cyclopentyl etc., wherein preferred cyclohexyl.
As described aryl, particularly, for example can enumerate butynyl, pentynyl, hexin base, phenyl, naphthyl etc.Wherein preferred phenyl.
As described aralkyl, particularly, for example can enumerate benzyl, wherein, preferred benzyl.
Above-mentioned each group can further have substituting group, as the substituting group that can introduce, for example can enumerate hydroxyl, amino, carboxyl, phosphate, imino-, thiol group, sulfo group, nitro etc.
X in the above-mentioned general formula (2) represents to be selected from carbonatoms to be 1～10 alkylidene group, alkenylene (alkenylene), cycloalkylidene (cycloalkylene), arylidene and to make up at least a in the group that these groups more than 2 form.
In addition, the linking group so that X represents, except above-mentioned organic linking group, can also in its chain, contain-S-,-S (=O) 2-,-O-,-C (=O)-.
As described carbonatoms is 1～10 alkylidene group, particularly, for example can enumerate methylene radical, ethylidene, propylidene, butylidene, pentylidene, hexylidene, inferior heptyl, octylene etc., wherein preferred ethylidene, pentylidene.
As described alkenylene, particularly, for example can enumerate ethynylene (ethynylene), inferior proyl (propynylene) etc., wherein, preferred inferior proyl.
As described cycloalkylidene, particularly, for example can enumerate cyclohexylidene, cyclopentylidene etc., wherein preferred cyclohexylidene.
As described arylidene, particularly, for example can enumerate phenylene, naphthylidene etc., wherein preferred phenylene.
Above-mentioned each linking group can further have substituting group, as the substituting group that can introduce, for example can enumerate hydroxyl, amino, carboxyl, phosphate, imino-, thiol group, sulfo group, nitro etc.
Concrete example (exemplary compounds A-1～A-32), the single cropping ammonium cation (concrete example of exemplary compounds A-33～A-44), but the present invention is not limited to these of two quaternary ammonium cations that lapping liquid of the present invention can contain is shown below.
Figure S2008100867783D00131
Figure S2008100867783D00141
Wherein, the cycrohC among the A43 6H 12The representative ring hexyl.
The angle of the dispersion stabilization from slurry, preferred A1, A2, A3, A4, A5, A6, A7, A8, A9, A10, A11, A12, A13, A14, A15, A18, A19, A23, A24, A29, A30, A31, A32, A33, A34, A35, A36, A37, A41, A42.
Certain cationic can be used alone or in combination of two or more kinds separately.
The certain cationic that lapping liquid of the present invention can contain is not subject to it especially and makes, and for example can synthesize as the replacement(metathesis)reaction that nucleophilic reagent works by ammonia or various amine etc.
In addition, also can obtain by buying as conventional streat drug.
The addition of certain cationic among the present invention, the lapping liquid when being used to grind (, be the lapping liquid after the dilution under the situation of water or aqueous solution dilution.With following " lapping liquid when being used to grind " synonym), be preferably more than the 0.001g/L and below the 10g/L, more preferably more than the 0.01g/L and below the 3g/L.That is, from substantially improving the angle of grinding rate, the addition of such certain cationic is preferably more than the 0.001g/L, and the angle from the sufficient stability of slurry is preferably below the 10g/L.
[compound] with carboxyl
From reaching the angle of sufficient grinding rate for the film except the film kind of low-k, lapping liquid of the present invention preferably further contains compound with carboxyl (below, also have to be called " organic acid ").As compound, so long as have the compound of 1 carboxyl at least, then have no particular limits, but, preferably select the represented compound of following general formula (4) from the angle of grinding rate structure at intramolecularly with carboxyl.
In addition, be present in preferred 1～4 of intramolecular carboxyl, from can the low-cost angle of using, more preferably 1～2.
General formula (4)
R 7——O-R 8——COOH
In the above-mentioned general formula (4), R 7, R 8Represent alkyl independently of one another, represent that preferably carbonatoms is 1～10 alkyl.
R 7Be 1 valency alkyl, for example preferred carbonatoms is 1～10 alkyl (for example, methyl, cycloalkyl etc.), aryl (for example, phenyl etc.), alkoxyl group, aryloxy etc.
R 8Be the divalent alkyl, for example preferred carbonatoms is 1～10 alkylidene group (for example, methylene radical, cycloalkylidene etc.), arylidene (for example, phenylene etc.), alkylidene group oxygen base (ア Le キ レ Application オ キ シ) etc.
R 7And R 8Represented alkyl can further have substituting group, as the substituting group that can introduce, for example can enumerate carbonatoms and be 1～3 alkyl, aryl, alkoxyl group, carboxyl etc.Wherein, R 7And R 8Represented alkyl contains carboxyl as under the substituent situation that can further have, and this compound will have a plurality of carboxyls.
In addition, R 7And R 8The formation ring texture can mutually combine.As ring texture, for example can enumerate furan nucleus, tetrahydrofuran (THF) ring etc.
As the represented compound of general formula (4), for example can enumerate pyromucic acid, 2,5-furans dicarboxylic acid, 3-furancarboxylic acid, 2-tetrahydrofuran (THF) carboxylic acid, diglycollic acid, methoxyacetic acid, anisole guanidine-acetic acid, phenylium etc., wherein, from grinding at a high speed by the angle of abrasive surface, preferred 2,5-furans dicarboxylic acid, 2-tetrahydrofuran (THF) carboxylic acid, diglycollic acid, methoxyacetic acid, phenylium.
Compound with carboxyl can use separately separately maybe can make up more than 2 kinds and use.
In the lapping liquid of the present invention, addition with compound (being preferably compound) of carboxyl with general formula (4) expression, the quality of the lapping liquid when being used to grind, it is above and below the 50g/L to be preferably 0.01g/L, and more preferably 0.05g/L is above and below the 20g/L.That is, from reaching the angle of sufficient grinding rate, the content of such compound with carboxyl (organic acid) is preferably more than the 0.01g/L, and its angle that too much surface depression takes place is set out, and is preferably below the 50g/L.
[tensio-active agent]
As an optimal way, lapping liquid of the present invention further contains tensio-active agent.
In the lapping liquid of the present invention,, can improve the grinding rate of grinding rate, control insulation layer by kind, the amount of adjustment sheet surface-active agent.As tensio-active agent, preferably use anion surfactant or cats product.
As anion surfactant, for example can enumerate the represented compound of following general formula (5).
As cats product, for example can enumerate the represented compound of following general formula (6).
Wherein, consider that the compound shown in the preferred following general formula (5) is considered from the angle of the grinding rate that suppresses insulation layer, preferably the compound shown in the following general formula (6) from the angle of the grinding rate that improves insulation layer
General formula (5)
R-SO 3 -
In the above-mentioned general formula (5), R represents alkyl, represents that preferably carbonatoms is 6～20 alkyl.
As carbonatoms is 6～20 alkyl, and particularly, for example preferred carbonatoms is 6～20 alkyl, aryl (for example, phenyl, naphthyl etc.) etc., and this alkyl or aryl can further have the substituting group of alkyl etc.
As the concrete example of the represented compound of general formula (5), for example can enumerate compounds such as decyl Phenylsulfonic acid, Witco 1298 Soft Acid, tetradecyl Phenylsulfonic acid, hexadecyl Phenylsulfonic acid, dodecyl naphthene sulfonic acid, tetradecyl naphthene sulfonic acid.
General formula (6)
Figure S2008100867783D00171
In the above-mentioned general formula (6), R a～R dRepresent that independently of one another carbonatoms is 1～18 alkyl.But R a～R dBe not whole identical alkyl.
As using R a～R dRepresented alkyl for example can be enumerated alkyl, aryl, phenyl etc., wherein, can preferably enumerate carbonatoms and be 1～20 straight chain and branched-chain alkyl.
In addition, R a～R dIn 2 can mutually combine, for example form ring texturees such as pyridine structure, tetramethyleneimine structure, piperidine structure, pyrrole structure.
As the object lesson of the represented compound of general formula (6), for example can enumerate compounds such as lauryl trimethyl ammonium, lauryl triethyl ammonium, stearyl trimethyl ammonium, cetyltrimethyl ammonium, octyl group trimethyl ammonium, dodecyl pyridine, decyl pyridine, octyl group pyridine.
As tensio-active agent of the present invention, can use the tensio-active agent except the represented compound of above-mentioned general formula (5) or general formula (6), as the represented compound anion surfactant in addition of general formula (5), for example can enumerate carboxylate salt, sulfuric acid, phosphate ester salt.
More particularly, for example,, can preferably use soap, N-acyl amino hydrochlorate, polyoxyethylene or polyoxypropylene alkyl ether carboxy acid salt, acylations peptide as carboxylate salt;
As sulfuric acid, can preferably use sulphonated oil, alkyl-sulphate, sulfated alkyl ether, polyoxyethylene or polyoxypropylene alkyl allyl ethers vitriol, alkylamide vitriol;
As phosphate ester salt, can preferably use alkylphosphonic, polyoxyethylene or polyoxypropylene alkyl allyl ethers phosphoric acid salt.
Tensio-active agent can use or make up two or more uses separately separately.
The 1L of the lapping liquid when being used for grinding, the total amount of the addition of tensio-active agent preferably becomes 0.001～10g, more preferably becomes 0.01～5g, especially preferably becomes 0.01～1g.That is, consider that from the angle that obtains effect of sufficient the addition of tensio-active agent is preferably more than the 0.01g, below the preferred 1g of angle that prevents the decline of CMP speed.
[other compositions]
In the scope of not damaging effect of the present invention, purpose, lapping liquid of the present invention can further contain additive.As additive, for example can enumerate oxygenant, pH regulator agent, sequestrant etc.
(oxygenant)
As a preferred mode, can enumerate the mode that lapping liquid of the present invention further contains oxidable compound (oxygenant) as the metal that grinds object.
As oxygenant, for example preferably use hydrogen peroxide, superoxide, nitrate, iodate, periodate, hypochlorite, chlorite, oxymuriate, perchlorate, persulphate, dichromate, permanganate, ozone water and silver (II) salt, iron (III) salt, wherein, preferably use hydrogen peroxide.
As iron (III) salt, for example except iron nitrate (III), iron(ic) chloride (III), ferric sulfate (III), iron bromide inorganic iron (III) salt such as (III), also preferably use organic complex salt of iron (III).
The addition of oxygenant can be adjusted according to the surperficial amount of recess that stops the CMP initial stage.Stop when the surperficial amount of recess at CMP initial stage is big, that is, in stopping CMP, when not thinking the over-mastication wiring material, preferably add the small amounts agent, and when surperficial amount of recess enough little, when desiring, preferably add the oxygenant of more amount with high speed abrasive cloth wire material.As mentioned above, preferably according to stopping that the surface depression situation at CMP initial stage changes the addition of oxygenant, therefore, the preferred 0.01mol～1mol of interpolation is preferably 0.05mol～0.6mol especially among the lapping liquid 1L when using in grinding.
(pH regulator agent)
From reaching the angle of high grinding rate, lapping liquid pH of the present invention is preferably 2.5～5.0, more preferably the scope of pH3.0～4.5.Under the situation of the pH of lapping liquid in this scope, the adjustment of the grinding rate of interlayer dielectric can be carried out more significantly, excellent especially effect can be brought into play.
For pH being adjusted in the above-mentioned preferred range, can use alkali/acid or buffer reagent.
As alkali/acid or buffer reagent, for example can preferably enumerate: ammonia, ammonium hydroxide, and organic hydroxide ammonium such as Tetramethylammonium hydroxide; The nonmetal alkaline agent of the alkanol amine of diethanolamine, trolamine, tri-isopropanolamine etc. etc.; The alkali metal hydroxide of sodium hydroxide, potassium hydroxide, lithium hydroxide etc.; The mineral acid of nitric acid, sulfuric acid, phosphoric acid etc.; The carbonate of yellow soda ash etc.; The phosphoric acid salt of tertiary sodium phosphate etc.; Borate, tetraborate, hydroxy benzoate etc.Particularly preferred alkaline agent is ammonium hydroxide, potassium hydroxide, lithium hydroxide and Tetramethylammonium hydroxide.
As the addition of alkali/acid or buffer reagent, as long as pH can be maintained in the preferable range, the lapping liquid when 1L is used for grinding, the preferred 0.0001mol～1.0mol of this addition more elects 0.003mol～0.5mol as.
(sequestrant)
The detrimentally affect of the polyvalent metal ion of sneaking in order to reduce etc., lapping liquid of the present invention preferably contains sequestrant (being Ethylene Diaminetetra Acetic Acid) as required.
As above-mentioned sequestrant; can enumerate the normally used Ethylene Diaminetetra Acetic Acid or its analogue that prevent agent as the precipitation of calcium and magnesium; particularly; for example can enumerate triacetamide; diethylene-triamine pentaacetic acid; ethylenediamine tetraacetic acid (EDTA); N; N; the N-trimethylene phosphonic; quadrol-N; N; N '; N '-tetramethylene sulfonic acid; trans cyclohexanediaminetetraacetic acid; the 1 tetraacethyl; glycoletherdiaminotetraacetic acid(GEDTA); quadrol o-hydroxy guanidine-acetic acid; ethylenediamine disuccinic acid (SS body); N-(the 2-carboxylate radical closes ethyl)-L-aspartic acid; the Beta-alanine oxalic acid; 2-phosphinylidyne butane-1,2; the 4-tricarboxylic acid; 1-hydroxy ethylidene-1; the 1-di 2 ethylhexyl phosphonic acid; N, N '-two (2-hydroxybenzyl) quadrol-N, N '-oxalic acid; 1; 2-dihydroxy-benzene-4,6-disulfonic acid etc.
Sequestrant can be as required also with more than two kinds.
The addition of sequestrant gets final product so long as be enough to seal the amount of the metal ions such as polyvalent metal ion of being sneaked into, and for example, it can be added among the lapping liquid 1L when using in grinding and be 0.0003mol～0.07mol.
Lapping liquid of the present invention has no particular limits its manufacturing.For example can obtain: the represented compound of antistatic agent or general formula (1) by mixing following material, with the inhibitor that can use as required, colloidal silica, two quaternary ammonium cations or single cropping ammonium cation, organic acid, tensio-active agent, additive, and water.
Lapping liquid of the present invention has following situation as the mode of using it: 1. be concentrated solution, the interpolation water or the aqueous solution dilute during use, form and use liquid; 2. prepare each composition with following aqueous solution, they are mixed, in case of necessity thin up and form use liquid; 3. be mixed with use liquid.
Lapping liquid of the present invention is suitable for the grinding on blocking layer usually, and described blocking layer is made of the barrier metal material of the diffusion that is used to prevent copper, and is present between the wiring and interlayer dielectric that is made of copper metal and/or copper alloy.
Below, describe for Ginding process of the present invention.
Ginding process of the present invention is characterized in that, uses lapping liquid of the present invention in the grinding on the blocking layer of semiconductor integrated circuit.
The lapping liquid that is used for Ginding process of the present invention is so long as lapping liquid of the present invention just has no particular limits.
In addition, be used for the semiconductor integrated circuit of Ginding process of the present invention,, just have no particular limits as long as have the blocking layer.
Can enumerate as an optimal way, in Ginding process of the present invention, be CMP for the grinding on the blocking layer of semiconductor integrated circuit.
[barrier metal material]
Formation is preferably low-resistance metallic substance usually as the material on the blocking layer of the grinding object of lapping liquid of the present invention, preferred especially Ru, RuO 4, TiN, TiW, Ta, TaN, W, WN, wherein also preferred especially Ta, TaN, Ru, RuO 4
[interlayer dielectric]
Interlayer dielectric as the grinding object of lapping liquid of the present invention, except normally used interlayer dielectrics such as TEOS, for example can enumerate contain relative permittivity be about 3.5～2.0 low-k material (for example, the organic polymer class, the SiOC class, SiOF classes etc. abbreviate the Low-k film usually as) interlayer dielectric.
Particularly, the material as the formation of the interlayer dielectric that is used for low-k has HSG-R7 (Hitachi changes into industry), black diamond (BLACKDIAMOND) (Applied Materials (Applied Materials, Inc)) etc. in the SiOC class.
[wiring metal starting material]
Among the present invention, for example preferably had a wiring that constitutes by copper metal and/or copper alloy by grinding element applicable to semiconducter device such as LSI as what grind object.As the starting material of this wiring, special preferably copper alloy is more preferably at and contains silver in the copper alloy.
Wherein, be contained in the silver content of copper alloy, below the preferred 40 quality %, below the preferred especially 10 quality %, more preferably below the 1 quality %, the silver amount can be brought into play the most excellent effect at the copper alloy of 0.00001～0.1 quality % scope.
[thickness of wiring]
Among the present invention, as grind object by grinding element, for example be applicable under the situation of DRAM equipment system that preferably having half-section is the following wiring of 0.15 μ m apart from (halfpitch), more preferably below the 0.10 μ m, more preferably below the 0.08 μ m.
On the other hand, for example be applicable under the situation of MPU equipment system preferably have the following wiring of 0.12 μ m, more preferably below the 0.09 μ m, more preferably below the 0.07 μ m by grinding element.
For have these wirings by grinding element, lapping liquid of the present invention can be brought into play especially excellent effect.
[Ginding process]
Lapping liquid in the Ginding process of the present invention has following situation as its use-pattern: 1. be concentrated solution, the interpolation water or the aqueous solution dilute during use, form and use liquid; 2. prepare each composition with following aqueous solution, they are mixed, in case of necessity thin up and form use liquid; 3. be mixed with use liquid.
Can use the lapping liquid under above-mentioned any situation in the Ginding process of the present invention.
An optimal way as Ginding process of the present invention can be enumerated: lapping liquid is supplied to grinding pad on the abrasive disk, make its with by being contacted of grinding element by abrasive surface, and make the method for being carried out relative movement by abrasive surface and grinding pad.
As the device that is used to grind, can use conventional milling apparatus, promptly have: keep having by abrasive surface by the support of grinding element (for example being formed with the wafer of conductive material film etc.) and pasted the milling apparatus of the abrasive disk (be equipped with can change rotating speed motor etc.) of grinding pad.As grinding pad, can use common non-woven fabrics, polyurathamc, porousness fluorine resin etc., there is no particular limitation.In addition, grinding condition also has no particular limits, and the speed of rotation of abrasive disk is preferably the low speed of rotation that does not make below the 200rpm that is flown out by grinding element.Have by abrasive surface (by grinding film) by grinding element the squeeze pressure of grinding pad is preferably 0.68～34.5kPa, in order to satisfy grinding rate at the homogeneity and the flatness of pattern, the more preferably 3.40～20.7kPa that are ground in the dignity.
In the process of lapping, lapping liquid is offered grinding pad continuously by pump etc.
In the present invention, when as above-mentioned 1. method, diluting concentrated solution, can use the following aqueous solution.The aqueous solution is for containing at least a above water in oxygenant, organic acid, additive, the tensio-active agent in advance, and the composition that contained composition and the composition that will diluted concentrated solution contains form altogether in this aqueous solution, the composition of the lapping liquid (use liquid) that uses when grinding.
Thus, under situation about using after the water solution dilution concentrated solution, allocate into after can form and be difficult to the dissolved composition, thereby can prepare further spissated concentrated solution with the aqueous solution.
In addition, as in concentrated solution, adding the method that the water or the aqueous solution dilute, the pipe arrangement that the lapping liquid that has been concentrated will be provided is arranged and provide water or the pipe arrangement of the aqueous solution collaborates halfway and mixes, the use liquid of lapping liquid that will be behind mixed diluting offers the method for grinding pad.The mixing of concentrated solution and water or the aqueous solution can adopt following method to carry out: make it pass through narrow path under the state of exerting pressure, make liquid impact the blended method mutually; In pipe arrangement, clog weighting materials such as Glass tubing, the method that makes liquid flow separate repeatedly, collaborate; The common methods that adopt such as method with the blade of power rotation are set in pipe arrangement.
The feed speed of lapping liquid is preferably 10～1000ml/min, for satisfying grinding rate by the flatness of homogeneity in the abrasive surface and pattern, is preferably 170～800ml/min.
In addition, as dilution concentrated solutions such as one side water or the aqueous solution, carry out abrasive method on one side, the pipe arrangement that lapping liquid will be provided is arranged and provide the pipe arrangement of the water or the aqueous solution independently to be provided with, respectively from the liquid of specified amount wherein is provided to grinding pad, mix on one side by grinding pad with by the relative movement of abrasive surface, Yi Bian carry out abrasive method.In addition, can also use in a container concentrated solution that adds specified amount and water or the aqueous solution to mix after, provide this mixed lapping liquid to grinding pad, thereby carry out abrasive method.
As other Ginding process, there is the composition that will should contain in the lapping liquid to be divided at least two kinds of moietys, when using these, add water or the aqueous solution dilutes, be provided to the grinding pad on the abrasive disk, make it and contacted by abrasive surface, and by being carried out abrasive method by abrasive surface and grinding pad relative movement.
For example, with oxygenant as moiety (A), with antistatic agent or with compound, organic acid, additive, tensio-active agent and the water of general formula (1) expression as moiety (B), when using these, after water or aqueous solution dilution moiety (A) and the moiety (B), can use.
In addition, the additive that solubleness is low is divided into two moietys (A) and (B), for example with oxygenant, additive and tensio-active agent as moiety (A), with antistatic agent or with compound, organic acid, additive, tensio-active agent and the water of general formula (1) expression as moiety (B), add the water or the aqueous solution when using them, after dilution moiety (A) and the moiety (B), can use.
Under the situation of above-mentioned example, three pipe arrangements of moiety (A), moiety (B) and the water or the aqueous solution need be provided respectively, with regard to diluted mixture, have three pipe arrangements are merged into the pipe arrangement that liquid is provided to grinding pad, and in this pipe arrangement, carry out the blended method, in this case, can will merge with another pipe arrangement again after two pipe arrangements merging earlier.Specifically, the moiety that contains insoluble additive is mixed with other moiety, prolong mixed path, guarantee dissolution time, and then the method that merges with the pipe arrangement of the water or the aqueous solution.
As other blending means, can enumerate as described above directly three pipe arrangements are directed into respectively on the grinding pad, carry out the blended method by grinding pad with by the relative movement of abrasive surface; And in 1 container, mix three kinds of moietys, from the method for the lapping liquid after grinding pad provides dilution wherein.
In above-mentioned Ginding process, the temperature that contains a moiety of oxygenant can be made as below 40 ℃, and other moiety is heated in the scope of room temperature to 100 ℃, when this moiety is mixed with other moiety, or when adding water or the aqueous solution and diluting, the liquid temperature is reached below 40 ℃.The phenomenon that solubleness uprised when this method had utilized temperature high, this is the preferred method that improves the solubleness of the low raw material of solubleness in the lapping liquid.
Above-mentioned passing through is heated to other moiety in the scope of room temperature to 100 ℃ and the dissolved raw material, when descending, temperature can from solution, separate out, therefore use when being in other moiety of low-temperature condition, must heat in advance and make the material dissolution of separating out.At this moment, can be in the following ways: carry through heating and raw material dissolved other moiety mode, stir the liquid that contains precipitate in advance, the heating pipe arrangement makes it the dissolved mode when carrying liquid afterwards.If will containing the temperature of a moiety of oxygenant, other moiety after the heating brings up to more than 40 ℃, then oxygenant may decompose, when therefore other moiety after this heating is mixed with a moiety that contains oxygenant, preferably reach below 40 ℃.
As mentioned above, in the present invention, also the lapping liquid composition can be divided into two above compositions and offer by abrasive surface.In this case, preferably be divided into the composition that contains oxygenant and contain the organic acid composition and supply with.In addition, also can use concentrated solution, dilution water is offered in addition by abrasive surface as lapping liquid.
Among the present invention, suitable composition with lapping liquid is divided into plural composition and offers by under the situation of the method for abrasive surface, and its feed rate is represented the total amount of each pipe arrangement feed rate.
[grinding pad]
Applicable to the abradant grinding pad of Ginding process of the present invention, can be no foaming structure pad, also can be the foaming structure pad.The former is the situation that the hard resin block of material of plastic plate and so on is used for grinding pad.In addition, the latter also comprises 3 types of independent foam (dry type foam), continuous foamed body (wet type foam), two-layer compound bodies (stacked system) etc., wherein preferred especially two-layer compound body (stacked system).Foaming can be uniformly, also can be uneven.
And then, can contain normally used abrasive particle (for example, cerium dioxide, silicon-dioxide, aluminum oxide, resin etc.) when grinding.In addition, with regard to its hardness, soft and hard being arranged respectively, can be wherein any, for stacked system, preferably has the kind of different hardness in each layer use.As material, preferred non-woven fabrics, imitation leather, polymeric amide, urethane, polyester, polycarbonate etc.In addition, on the face that is contacted by abrasive surface, can also process trellis ditch/hole/concentric ditch/spirrillum ditch etc.
[wafer]
Object when carrying out CMP as the lapping liquid in the use Ginding process of the present invention is by the wafer of grinding element, and preferred diameter is more than the 200mm, more than the preferred especially 300mm.Diameter is that 300mm can significantly bring into play effect of the present invention when above.
[milling apparatus]
The device that utilizes lapping liquid of the present invention to implement to grind is not particularly limited, and can enumerate Miller plum plucked instrument (Mirra Mesa) CMP, reflection (Reflexion) CMP (aplite (ア プ ラ イ De) material), FREX200, FREX300 (ebara corporatlon), NPS3301, NPS2301 (Nikon), A-FP-310A, A-FP-210A (Tokyo precision), 2300 TERES and (draw female research (ラ system リ サ-チ)), power (Momentum) (tachometric method order (Speedfam) IPEC) etc.
Can make semiconductor integrated circuit by following process in the Ginding process of the present invention, promptly, with be carried out grinding by grinding element (for example, wafer), finish to grind back thorough washing in flowing water, re-use spin-drier (spin dryer) etc. and wipe attached to being carried out drying by the water droplet on the grinding element, for example make semiconductor integrated circuit behind dry the end by known method cutting in the past.
The semiconductor integrated circuit of utilizing lapping liquid of the present invention to grind, abrasive surface is smooth, does not almost have the blocking layer.
Embodiment
Below, illustrate in greater detail the present invention by embodiment, but the present invention is not limited to these embodiment.
[embodiment 1]
The lapping liquid of forming shown in being prepared as follows carries out grinding experiment.
＜composition (1) 〉
Antistatic agent: the compound, the 0.8g/L that represent with D-1
Two quaternary ammonium cations: hexamethonium chloride (hexamethonium chloride), 0.2g/L
Inhibitor: benzotriazole (BTA), 0.5g/L
Colloidal silica: offspring diameter: 65nm, PL3 slurry, Japan chemical industry society system, 200g/L
Compound with carboxyl: diglycollic acid (with the pure pharmaceutical worker's industry of light (strain) system), 1g/L
The total amount that has added pure water: 1000mL, pH3.5 (adjusting) with ammoniacal liquor and nitric acid
Oxygenant: 30% hydrogen peroxide, 10ml
(evaluation method)
Make as milling apparatus to be used for the device " LGP-612 " that Pu Masite (ラ Star プ マ ス タ-) company makes, under the following conditions, Yi Bian supply with slurry, Yi Bian grind each wafer film shown in following.
Rotating speed of table: 90rpm
Head rotating speed: 85rpm
Grinding pressure: 13.79kPa
Grinding pad: the system PolotexPad of labor moral nit (ロ デ-Le ニ Star タ) Co., Ltd.
Lapping liquid feed speed: 200ml/min
(grinding rate evaluation: grind object)
Use 8 inches substrates that on the Si substrate, are formed with Ta film, TEOS film, SiOC film as grinding object.
＜grinding rate 〉
Measure the thickness of Ta film (blocking layer) before and after the CMP, TEOS film (insulating film), SiOC (BD-II) respectively, converse grinding rate by following calculating formula.
Grinding rate (
Figure S2008100867783D00251
/ minute)=(thickness of the film after the thickness-grinding of the film before grinding)/milling time
Gained the results are shown in the table 1.
[embodiment 2～35, and comparative example 1～2]
With the composition among the embodiment 1 (1), change over the composition described in following table 1～table 3 and after preparing corresponding lapping liquid, use this corresponding lapping liquid under the grinding condition identical, to carry out grinding test with embodiment 1.It the results are shown in table 1～table 3.
Table 1
Antistatic agent (content) Certain cationic (content) Organic acid (content) Colloidal silica (content) Other compositions (content) pH Ta grinding rate (nm/min) TEOS grinding rate (nm/min) SiOC grinding rate (nm/min)
Embodiment 1 D-1 (0.8g/L) A-1 (0.2g/L) B-1 (1g/L) C-1 (5 quality %) BTA(1g/L) 3.5 55 85 15
Embodiment 2 D-1 (0.8g/L) A-33 (0.4g/L) B-1 (1g/L) C-2 (5 quality %) BTA(1g/L)、 DNS(0.5g/L) 3.2 59 90 10
Embodiment 3 D-2 (0.8g/L) A-8 (0.2g/L) B-2 (1g/L) C-2 (5 quality %) DBTA(1g/L) 3.5 60 105 18
Embodiment 4 D-3 (0.8g/L) A-5 (0.2g/L) B-1 (1g/L) C-4 (5 quality %) DCEBTA (1g/L)、 DP(0.5g/L) 3.5 65 85 13
Embodiment 5 D-3 (0.8g/L) A-10 (0.2g/L) B-3 (1g/L) C-1 (2.5 quality %) C-3 (2.5 quality %) BTA(1g/L)、 DBS(0.5g/L) 3.5 66 90 16
Embodiment 6 D-4 (0.8g/L) A-32 (0.2g/L) B-5 (1g/L) C-2 (5 quality %) HMBTA (1g/L) 3.5 70 100 17
Embodiment 7 D-4 (0.8g/L) A-33 (0.4g/L) B-1 (1g/L) C-4 (5 quality %) BTA(1g/L)、 LTM(0.5g/L) 3.0 70 90 18
Embodiment 8 D-5 (0.8g/L) A-5 (0.2g/L) B-1 (1g/L) C-2 (5 quality %) BTA(1g/L) 3.5 68 85 15
Embodiment 9 D-6 (0.8g/L) A-16 (0.2g/L) B-3 (1g/L) C-1 (2.5 quality %) C-3 (2.5 quality %) HEABTA (1g/L)、 DP(0.5g/L) 3.5 59 115 16
Embodiment 10 D-6 (0.8g/L) A-20 (0.2g/L) B-3 (1g/L) C-2 (2.5 quality %) C-3 (2.5 quality %) BTA(1g/L)、 DBS(0.5g/L) 3.8 50 105 17
Embodiment 11 D-6 (0.8g/L) A-41 (0.4g/L) B-4 (1g/L) C-2 (5 quality %) BTA(1g/L)、 DP(0.5g/L) 3.5 46 90 15
Embodiment 12 D-6 (0.8g/L) A-12 (0.2g/L) B-1 (1g/L) C-1 (5 quality %) BTA(1g/L) 3.0 48 85 12
Table 2
Antistatic agent (content) Certain cationic (content) Organic acid (content) Colloidal silica (content) Other compositions (content) pH Ta grinding rate (nm/min) TEOS grinding rate (nm/min) SiOC grinding rate (nm/min)
Embodiment 13 D-7 (0.8g/L) A-13 (0.2g/L) B-1 (1g/L) C-2 (5 quality %) HMBTA (1g/L) 3.5 68 80 10
Embodiment 14 D-7 (0.8g/L) A-2 (0.2g/L) B-5 (1g/L) C-1 (5 quality %) DBTA (1g/L)、 DNS (0.5g/L) 2.5 65 90 12
Embodiment 15 D-8 (0.8g/L) A-15 (0.2g/L) B-1 (1g/L) C-4 (5 quality %) DCEBTA (1g/L) 3.5 63 80 15
Embodiment 16 D-8 (0.8g/L) A-5 (0.2g/L) B-1 (1g/L) C-4 (2.5 quality %) C-5 (2.5 quality %) BTA(1g/L) 3.5 58 80 18
Embodiment 17 D-9 (0.8g/L) A-10 (0.2g/L) B-2 (1g/L) C-3 (5 quality %) BTA(1g/L) 3.5 55 95 13
Embodiment 18 D-10 (0.8g/L) A-32 (0.2g/L) B-1 (1g/L) C-1 (5 quality %) DBTA (1g/L) 3.5 70 90 15
Embodiment 19 D-11 (0.8g/L) A-8 (0.2g/L) B-3 (1g/L) C-2 (5 quality %) DCEBTA (1g/L)、 DBS (0.5g/L) 3.5 75 80 12
Embodiment 20 D-12 (0.8g/L) A-13 (0.2g/L) B-1 (1g/L) C-4 (5 quality %) BTA(1g/L) 3.2 65 85 15
Embodiment 21 D-12 (0.8g/L) A-21 (0.2g/L) B-2 (1g/L) C-2 (5 quality %) BTA (1g/L)、 DP(0.5g/L) 3.5 66 95 20
Embodiment 22 D-13 (0.8g/L) A-36 (0.4g/L) B-2 (1g/L) C-1 (2.5 quality %) C-3 (2.5 quality %) BTA (1g/L)、 LTM (0.5g/L) 3.5 68 95 13
Embodiment 23 D-13 (0.8g/L) A-23 (0.2g/L) B-1 (1g/L) C-2 (2.5 quality %) C-3 (2.5 quality %) BTA (1g/L)、 DP(0.5g/L) 3.8 70 105 14
Embodiment 24 D-14 (0.8g/L) A-2 (0.2g/L) B-2 (1g/L) C-2 (5 quality %) BTA(1g/L) 3.5 68 115 12
Table 3
Antistatic agent (content) Certain cationic (content) Organic acid (content) Colloidal silica (content) Other compositions (content) pH Ta grinding rate (nm/min) TEOS grinding rate (nm/min) SiOC grinding rate (nm/min)
Embodiment 25 D-15 (0.8g/L) A-25 (0.2g/L) B-1 (1g/L) C-3 (5 quality %) DCEBTA (1g/L) 3.5 60 105 11
Embodiment 26 D-16 (0.8g/L) A-10 (0.2g/L) B-1 (1g/L) C-2 (5 quality %) BTA (1g/L)、 DP(0.5g/L) 3.8 75 100 10
Embodiment 27 D-17 (0.8g/L) A-8 (0.2g/L) B-1 (1g/L) C-4 (5 quality %) HEABTA (1g/L)、 DP(0.5g/L) 3.5 70 95 15
Embodiment 28 D-18 (0.8g/L) A-5 (0.2g/L) B-4 (1g/L) C-1 (5 quality %) BTA(1g/L) 3.5 68 85 20
Embodiment 29 D-19 (0.8g/L) A-21 (0.2g/L) B-1 (1g/L) C-1 (5 quality %) BTA (1g/L)、 DNS (0.5g/L) 3.5 59 80 18
Embodiment 30 D-19 (0.8g/L) A-20 (0.2g/L) B-2 (1g/L) C-2 (5 quality %) BTA(1g/L) 3.5 60 85 17
Embodiment 31 D-20 (0.8g/L) A-31 (0.2g/L) B-1 (1g/L) C-4 (5 quality %) BTA(1g/L) 3.8 58 75 16
Embodiment 32 D-21 (0.8g/L) A-36 (0.4g/L) B-5 (1g/L) C-1 (2.5 quality %) C-3 (2.5 quality %) BTA (1g/L)、 DP(0.5g/L) 3.5 59 90 15
Embodiment 33 D-22 (0.8g/L) A-16 (0.2g/L) B-2 (1g/L) C-2 (5 quality %) BTA(1g/L) 3.5 70 80 14
Embodiment 34 D-23 (0.8g/L) A-41 (0.4g/L) B-1 (1g/L) C-4 (5 quality %) BTA(1g/L) 3.5 65 85 13
Embodiment 35 D-23 (0.8g/L) A-33 (0.4g/L) B-5 (1g/L) C-1 (2.5 quality %) C-3 (2.5 quality %) BTA (1g/L)、 DP(0.5g/L) 3.5 60 90 19
Comparative example 1 C-1 (5 quality %) Lactic acid (1.0g/L), BTA (1.0g/L) 3.5 60 85 45
Comparative example 2 C-2 (2.5 quality %) C-3 (2.5 quality %) Lactic acid (1.0g/L), BTA (1.0g/L) 9.5 40 30 75
D-1～D-23, A-1～A-45 that above-mentioned table 1 is put down in writing to the table 3 are meant aforesaid exemplary compounds.
In addition, at the compound of above-mentioned table 1, detailed record will be arranged below to table 3 part omitted note.
Inhibitor
BTA:1,2, the 3-benzotriazole
DBTA:5,6-dimethyl-1,2,3-benzotriazole
DCEBTA:1-(1,2-dicarboxyl ethyl) benzotriazole
HEABTA:1-[N, two (hydroxyethyl) amino methyls of N-] benzotriazole
HMBTA:1-(methylol) benzotriazole
Tensio-active agent
DBS: Witco 1298 Soft Acid
DNS: dodecyl naphthene sulfonic acid
LTM: nitric acid lauryl trimethyl ammonium
DP: nitric acid dodecyl pyridine
In addition, shape, initial size for above-mentioned table 1 colloidal silica C-1～C-5 of record to the table 3 are shown in Table 4.Wherein, the colloidal silica of record all is Japan chemical industry society system in the following table 4.
Table 4
Abrasive particle title (initial size/nm, shape)
C-1 PL3 (35nm, cocoon shape thing (cocoon-shaped))
C-2 PL3L (35nm, spherical (spherical))
C-3 PL3H (35nm, aggregate (aggregate))
C-4 PL2 (25nm, cocoon shape thing)
C-5 PL2L (20nm, sphere)
In addition, the compound title of table 1 compound with carboxyl (organic acid) B-1～B-5 of record to the table 3 is shown in the following table 5.
Table 5
The compound title
B-1 Diglycollic acid
B-2 2,5-furans dicarboxylic acid
B-3 2-tetrahydrofuran (THF) carboxylic acid
B-4 Methoxyacetic acid
B-5 No organic acid
According to table 1 to table 3 as can be known, use under the situation of lapping liquid of embodiment 1～35, compare the grinding rate height of Ta and TEOS, but also can fully suppress grinding rate for the low-k film with comparative example 1～2.
On the other hand, though the lapping liquid of comparative example 1 is no problem to the grinding rate of Ta and TEOS, discovery can not suppress the grinding rate for the low-k film.Also find in addition: the lapping liquid of comparative example 2 is low for the grinding rate of Ta and TEOS, and becomes very fast for the grinding rate of low-k film.
Above result shows: lapping liquid of the present invention is for the grinding rate excellence of Ta, TEOS, and can fully suppress the grinding rate to the low-k film.

Claims (10)

1. lapping liquid, it is used for the blocking layer of grinding semiconductor unicircuit, wherein, contains compound, inhibitor, colloidal silica and the water shown in the following general formula (1),
General formula (1)
In the formula, R 1, R 2It is at least a in 6～30 alkyl, thiazolinyl, cycloalkyl, aryl, aralkyl and the polyoxyethylene chain that expression independently of one another is selected from hydrogen atom, carbonatoms, R 1, R 2Can interosculate, a is the integer more than 1.
2. lapping liquid as claimed in claim 1, wherein, the compound concentrations shown in the described general formula (1) is 0.005～50g/L with respect to the total mass of lapping liquid.
3. lapping liquid as claimed in claim 1 or 2, wherein, the pH of described lapping liquid is 2.5～5.0.
4. lapping liquid as claimed in claim 1, wherein, the concentration of described colloidal silica is 0.5～15 quality % with respect to the total mass of lapping liquid.
5. lapping liquid as claimed in claim 1, wherein, the original median size of described colloidal silica is in the scope of 20～50nm.
6. lapping liquid as claimed in claim 1, wherein, described inhibitor is for being selected from 1,2,3-benzotriazole, 5,6-dimethyl-1,2,3-benzotriazole, 1-(1,2-dicarboxyl ethyl) benzotriazole, 1-[N, two (hydroxyethyl) amino methyls of N-] at least a compound in benzotriazole and 1-(methylol) benzotriazole.
7. lapping liquid as claimed in claim 1 wherein, further contains the single cropping ammonium cation shown in two quaternary ammonium cations shown in the following general formula (2) or the following general formula (3),
General formula (2)
General formula (3)
In general formula (2) or the general formula (3), R 1～R 7It is at least a in 1～20 alkyl, thiazolinyl, cycloalkyl, aryl and the aralkyl that expression independently of one another is selected from carbonatoms, R 1～R 6In 2 groups can mutually combine, X represents to be selected from carbonatoms to be 1～10 alkylidene group, alkenylene, cycloalkylidene, arylidene and to make up at least a in the group that these groups form.
8. lapping liquid as claimed in claim 1 wherein, further contains the compound with carboxyl, and this compound with carboxyl is the compound shown in the following general formula (4),
General formula (4)
R 7——O——R 8——COOH
In the general formula (4), R 7, R 8Represent alkyl independently of one another, R 7And R 8The formation ring texture can mutually combine.
9. lapping liquid as claimed in claim 1, wherein, further containing negatively charged ion is that tensio-active agent or positively charged ion are tensio-active agent.
10. a Ginding process is characterized in that, in the grinding on the blocking layer of semiconductor integrated circuit, uses each the described lapping liquid in the claim 1～9.
CN2008100867783A 2007-03-26 2008-03-26 Lapping liquid Active CN101275065B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-079993 2007-03-26
JP2007079993A JP5285866B2 (en) 2007-03-26 2007-03-26 Polishing liquid

Publications (2)

Publication Number Publication Date
CN101275065A CN101275065A (en) 2008-10-01
CN101275065B true CN101275065B (en) 2013-07-31

Family

ID=39915002

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2008100867783A Active CN101275065B (en) 2007-03-26 2008-03-26 Lapping liquid

Country Status (4)

Country Link
JP (1) JP5285866B2 (en)
KR (1) KR101476656B1 (en)
CN (1) CN101275065B (en)
TW (1) TWI402336B (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5383164B2 (en) * 2008-11-28 2014-01-08 富士フイルム株式会社 Polishing liquid
US8119529B2 (en) * 2009-04-29 2012-02-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method for chemical mechanical polishing a substrate
US8568610B2 (en) * 2010-09-20 2013-10-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Stabilized, concentratable chemical mechanical polishing composition and method of polishing a substrate
US20190153262A1 (en) * 2017-11-20 2019-05-23 Cabot Microelectronics Corporation Composition and method for polishing memory hard disks exhibiting reduced surface scratching
JPWO2019131885A1 (en) * 2017-12-27 2021-01-14 ニッタ・デュポン株式会社 Polishing slurry
CN108623483A (en) * 2018-06-27 2018-10-09 陕西科技大学 A kind of anti-mud agent and preparation method and application containing xenyl
CN109232268B (en) * 2018-10-30 2021-04-13 中国石油集团渤海钻探工程有限公司 Imbibition expulsion agent and preparation method thereof
JP2020203980A (en) * 2019-06-17 2020-12-24 日本キャボット・マイクロエレクトロニクス株式会社 Chemical mechanical polishing composition, rinse composition, chemical mechanical polishing method, and rinsing method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1610963A (en) * 2001-10-31 2005-04-27 日立化成工业株式会社 Polishing fluid and polishing method
CN1651544A (en) * 2005-01-07 2005-08-10 清华大学 Grinding liquid used for grinding back surface of storage hard disk magnetic head

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1035884C (en) * 1994-12-13 1997-09-17 浙江大学精细化工厂 Protective and testing liquid for braking pump of automobile
JP4069396B2 (en) * 1997-01-14 2008-04-02 荒川化学工業株式会社 Cleaning composition
JPH11246679A (en) * 1998-02-27 1999-09-14 Aiwa Raito:Kk Polishing material
JP2000049388A (en) * 1998-07-27 2000-02-18 Matsushita Electron Corp Semiconductor device and manufacture thereof
JP4816836B2 (en) * 1998-12-28 2011-11-16 日立化成工業株式会社 Polishing liquid for metal and polishing method using the same
JP3768401B2 (en) * 2000-11-24 2006-04-19 Ｎｅｃエレクトロニクス株式会社 Chemical mechanical polishing slurry
US20030168627A1 (en) * 2002-02-22 2003-09-11 Singh Rajiv K. Slurry and method for chemical mechanical polishing of metal structures including refractory metal based barrier layers
US7018560B2 (en) * 2003-08-05 2006-03-28 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Composition for polishing semiconductor layers
JP2005340755A (en) * 2003-11-14 2005-12-08 Showa Denko Kk Abrasive compound and polishing method
JP2005244123A (en) * 2004-02-27 2005-09-08 Fujimi Inc Polishing composition
JP2006179845A (en) * 2004-11-26 2006-07-06 Fuji Photo Film Co Ltd Polishing solution for metal, and polishing method
JP2006165142A (en) * 2004-12-06 2006-06-22 Jsr Corp Water-based dispersing element for chemical mechanical polishing and chemical mechanical polishing method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1610963A (en) * 2001-10-31 2005-04-27 日立化成工业株式会社 Polishing fluid and polishing method
CN1651544A (en) * 2005-01-07 2005-08-10 清华大学 Grinding liquid used for grinding back surface of storage hard disk magnetic head

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JP特开2003-38883A 2003.02.12

Also Published As

Publication number Publication date
CN101275065A (en) 2008-10-01
TWI402336B (en) 2013-07-21
JP5285866B2 (en) 2013-09-11
KR20080087689A (en) 2008-10-01
TW200902694A (en) 2009-01-16
JP2008243997A (en) 2008-10-09
KR101476656B1 (en) 2014-12-26

Similar Documents

Publication Publication Date Title
CN101275065B (en) Lapping liquid
US8715524B2 (en) Polishing liquid
CN101333417B (en) Polishing liquid and polishing method using same
US8409467B2 (en) Polishing liquid for semiconductor integrated circuit
US8338303B2 (en) Polishing liquid
US20070181534A1 (en) Barrier polishing liquid and chemical mechanical polishing method
TWI413678B (en) Polishing liquid
US8404146B2 (en) Polishing liquid and polishing method
CN101397480A (en) Polishing liquid and polishing method
CN101374922B (en) CMP slurry and method for polishing semiconductor wafer using the same
CN101177602A (en) Lapping liquid
KR20070096918A (en) Metal polishing slurry
KR20070079055A (en) Polishing liquid for barrier layer
CN104170065A (en) Grinding method
TWI413679B (en) Polishing liquid
TWI480367B (en) Polishing liquid
TWI433915B (en) Polishing liquid
JP2008091411A (en) Polishing solution for metal
TWI470068B (en) Metal polishing liquid

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant