CN101273311B

CN101273311B - Management method and device

Info

Publication number: CN101273311B
Application number: CN2005800517002A
Authority: CN
Inventors: 冈安俊幸; 须川成利; 寺本章伸
Original assignee: Tohoku University NUC; Advantest Corp
Current assignee: Tohoku University NUC; Advantest Corp
Priority date: 2005-09-27
Filing date: 2005-09-27
Publication date: 2010-05-12
Anticipated expiration: 2025-09-27
Also published as: CN101273311A

Abstract

A control method for controlling, in connection with a controlled production line for producing an electronic device by a plurality of production steps, respective production devices used in respective production steps, the control method comprising the reference characteristics acquisition step of acquiring the characteristics of a reference device produced by a predetermined reference production line able to execute a plurality of production steps, the comparison device production step of producing a comparison device by processing at least one production step, out of the plurality of production steps, by the controlled production line and by processing the other production steps by the reference production line, the comparison characteristics measuring step of measuring the characteristics of the comparison device,; the characteristics comparison step of comparing the characteristics of the reference device with the characteristics of the comparison device, and the judging step of judging, based on the difference in characteristics, the acceptability of a production device used in the production step of the controlled production line that has processed the comparison device.

Description

Management method and management devices

Technical field

The management method and the management devices of the process units that uses in the production line of electron device of semiconductor circuit etc. the present invention relates to manage production.

Background technology

For many years, when producing the electron device of semiconductor circuit etc., all produce electron device by multiple production process such as matting, heat treatment step, doping operation, film formation process, photo-mask process, etching work procedure.In each road production process, use can be implemented the process units of this production process.

In addition, after producing electron device, before electron device dispatches from the factory, all carry out the test of this electron device, select bad electron device.This mensuration can be carried out such as the electrical characteristics of electron device by test.

In addition,, analyze bad electron device, detect and produce this bad reason in order to improve the yield rate of electron device.For example, can be by out of joint in any procedure in the analytical electron device detection production line.

Summary of the invention

Yet, for many years, want to detect in any procedure in the production line out of joint, must measure the component shape of bad electron device etc., microphotograph that for example can be by electron device etc. is inferred poor prognostic cause.Therefore, infer that poor prognostic cause need spend considerable time.In addition, be difficult to accurately determine the process units of formation poor prognostic cause.

For this reason, the object of the present invention is to provide a kind of management method and management devices that can solve above-mentioned problem.This purpose can realize by the feature described in the independent claim in the combination right claimed range.In addition, the subordinate claim is stipulated the specific embodiment that the present invention is more favourable.

In order to solve above-mentioned problem, the 1st kind of mode of the present invention provides a kind of management method, be at the line of managing production by the quilt of multiple tracks production process production electron device, manage the management method of each process units that uses in each road production process, have: datum characteristic is obtained the stage, it obtains the benchmark Devices Characteristics, and this benchmark device is by implementing the benchmark production line production multiple tracks production process, predetermined; The comparator device production phase, it makes by one production process in the line processing multiple tracks production process of managing production at least, makes the benchmark production line handle other production process, the production comparator device; Comparative characteristic is measured the stage, and it measures the characteristic of comparator device; The characteristic comparison phase, the characteristic of its benchmark Devices Characteristics and comparator device; Decision stage, it is according to the difference of characteristic, and whether the quilt of the determination processing comparator device process units that uses in the production process of line of managing production is good.

Also can in obtaining the stage, datum characteristic measure the benchmark Devices Characteristics.Management method also can have the assurance stage, and it measures the characteristic of a plurality of process units that use in the benchmark production line in advance, guarantees that in advance each process units that uses in the benchmark production line is good.

Management method also can have: information obtains the stage, and it is obtained in advance by the information of a plurality of process units that use in the line of managing production; The benchmark production line is constructed the stage, and it constructs the benchmark production line in advance according to the information of process units.Management method also has the benchmark choice phase, its selection reference production line in advance from the multiple tracks production line of producing electron device with same production process.

The benchmark choice phase also has: in the mensuration stage, it measures the characteristic of each electron device of producing by each pipeline production line in advance; Choice phase, it is according to the characteristic of each electron device, selection reference production line in advance from the multiple tracks production line.

Datum characteristic is obtained the stage, and the comparator device production phase is by multiple tracks production process production electron device, this electron device has test circuit, this test circuit comprises that being two-dimensional matrix shape arranges, contains aforementioned determined transistorized a plurality of determined circuit separately, and the output signal of an aforementioned determined circuit that makes appointment is to the selection portion of the common output signal line output that is provided with of aforementioned a plurality of determined circuit; Datum characteristic is obtained the stage and had: the transistor choice phase, it selects a plurality of determined circuit successively by selection portion in the test circuit of benchmark device; In the output mensuration stage, in its test circuit according to the benchmark device, the determined circuit of selecting is measured the determined transistorized electrical characteristics that each determined circuit has to the output signal of output signal line output; The comparative characteristic mensuration stage has: the transistor choice phase, it selects a plurality of determined circuit successively by selection portion in the test circuit of comparator device; In the output mensuration stage, in its mensuration circuit according to comparator device, the determined circuit of selecting is measured the determined transistorized electrical characteristics that each determined circuit has to the output signal of output signal line output.

Each determined circuit comprises: grid voltage control part, the grid voltage of its appointment add to determined transistorized gate terminal outward; The reference voltage input part, its reference voltage from the outside input offers the reference voltage side terminal of the side determined transistor drain terminal and the source terminal; The terminal voltage efferent, it is exported the terminal voltage of the terminal beyond the reference voltage side terminal in determined transistor drain terminal and the source terminal to be condition from outside input select signal as output signal; Selection portion comprises: the row selection portion, and it selects signal with the capable corresponding determined circuit output of appointment in a plurality of determined circuit that two-dimensional matrix shape is arranged; Column selection portion, it selects the terminal voltage of the determined circuit corresponding with the row of appointment from the determined circuit of input select signal, make it to export to output signal line; Test circuit also comprises: a plurality of current sources, and itself and corresponding settings of each row of a plurality of determined circuit make the selection portion of being expert at of electric current between the source drain of appointment import in the determined circuit of selection signal mobile; Datum characteristic is obtained the stage and the comparative characteristic mensuration stage is measured terminal voltage, as each determined transistorized electrical characteristics.

Datum characteristic obtains the stage and comparative characteristic is measured the stage, at each determined transistor, according to reference voltage and terminal voltage, this determined transistorized threshold voltage is measured as electrical characteristics.

The error of a plurality of determined transistorized threshold voltages that contain in the error of a plurality of determined transistorized threshold voltages that contain in the characteristic comparison phase benchmark device and the comparator device.

Each determined circuit comprises: grid voltage control part, the grid voltage of its appointment add to determined transistorized gate terminal outward; Voltage adds portion, and it gives determined transistorized source terminal and drain terminal impressed voltage, the Control of Voltage that adds on this determined transistorized gate insulating film for roughly certain; Capacitor, it stores the grid leakage current that flows to source terminal and drain terminal from determined transistorized gate terminal; The condenser voltage efferent, it is exported the condenser voltage of the end of source terminal in the capacitor and drain terminal side to be condition from outside input select signal as output signal; Datum characteristic obtains the stage and comparative characteristic is measured the stage as each determined transistorized electrical characteristics, measures condenser voltage.

If adopt the 2nd kind of mode of the present invention, a kind of management devices is provided, be at the line of managing production by the quilt of multiple tracks production process production electron device, manage the management devices of each process units that uses in each road production process; Have: the datum characteristic determination part, it measures the benchmark Devices Characteristics, and this benchmark device is by implementing the benchmark production line production multiple tracks production process, predetermined; The comparator device production controlling part, it makes by one production process in the line processing multiple tracks production process of managing production at least, makes the benchmark production line handle other production process, the production comparator device; The comparative characteristic determination part, it measures the characteristic of comparator device; The characteristic comparing section, the characteristic of its benchmark Devices Characteristics and comparator device; Detection unit, it is according to property difference, and whether the quilt of the determination processing comparator device process units that uses in the production process of line of managing production is good.

If adopt the 3rd kind of mode of the present invention, a kind of management method is provided, be at the line of managing production by the quilt of multiple tracks production process production electron device, the management method of managing each process units that uses in each road production process; Have: the preparatory stage, it prepares the 1st device and the 2nd device with same production line production; The 1st plasma illumination stage, its plasma irradiation unit by implementing to use in the benchmark production line multiple tracks production process, predetermined is given the 1st device irradiation plasma; The 2nd plasma illumination stage, it gives the 2nd device irradiation plasma by by the plasma irradiation unit that uses in the line of managing production; In the characteristic measurement stage, it is measured respectively and shone isoionic the 1st device and the 2nd Devices Characteristics; The characteristic comparison phase, it is the 1st Devices Characteristics and the 2nd Devices Characteristics relatively; Decision stage, whether it judges good by the plasma irradiation unit in the line of managing production according to the difference of characteristic.

And the foregoing invention summary does not list whole essential feature of the present invention, and the sub-combinations thereof of these syndromes also can constitute invention.

The invention effect

If adopt the present invention, can be correctly and the production line of the electron device of managing production easily in the process units that uses.

Description of drawings

Fig. 1 is the configuration example diagrammatic sketch of the management devices 10 that relates to of embodiments of the present invention.

The managed production configuration example diagrammatic sketch of line 100 of Fig. 2.

Fig. 3 is the process flow diagram that illustrates the action of management devices 10.

Fig. 4 illustrates device producer to have the line 100 of being managed production, the processing flow chart when outside testing agency has benchmark production line 200.

Fig. 5 illustrates in many production lines that device producer has, and makes a production line have the function of benchmark production line 200, makes all the other production lines have processing flow chart when being managed production line 100 functions.

Fig. 6 is the illustration figure by the upper surface of the wafer 500 that is formed a plurality of electron devices 510 by manage production line 100 or benchmark production line 200.

Fig. 7 is the illustration figure that the circuit of test circuit 300 constitutes.

Fig. 8 is the characteristic as benchmark device and comparator device, when measuring the error of threshold voltage of each determined transistor 314, the illustration process flow diagram of datum

characteristic determination part

140 or 142 actions of comparative characteristic determination part.

Fig. 9 is the characteristic as benchmark device and comparator device, when measuring the error of current-voltage characteristic of each determined transistor 314, the illustration process flow diagram of datum

characteristic determination part

140 or 142 actions of comparative characteristic determination part.

Figure 10 is the characteristic as benchmark device and comparator device, when measuring the error of PN junction leakage current of each determined transistor 314, the illustration process flow diagram of datum

characteristic determination part

140 or 142 actions of comparative characteristic determination part.

Figure 11 is another illustration figure that expression test circuit 300 has the circuit formation of each unit 310.

Figure 12 is the characteristic as benchmark device and comparator device, when measuring the grid leakage current of each determined transistor 372, the illustration figure of datum

characteristic determination part

140 or 142 actions of comparative characteristic determination part.

Figure 13 is at the line 100 of being managed production, and manages another illustration process flow diagram of the management method of each process units 105 that uses in each road production process.

The number in the figure explanation:

10, management devices, 20, the device production system, 100, by the line of being managed production, 105, process units, 110, element separation circuit group, 114, element forms the operation group, 118, distribution forms the operation group, 120, the assembling procedure group, 130, the test step group, 140, the datum characteristic determination part, 142, the comparative characteristic determination part, 146, measure control part, 150, the characteristic comparing section, 160, detection unit, 170 comparator device production controlling parts, 200, the benchmark production line, 210, element separation circuit group, 218, distribution forms the operation group, 300, test circuit, 302, column selection portion, 304, the row selection portion, 306, the column selection transistor, 310, the unit, 312, the switch transistor, 314, determined transistor, 316, row selecting transistor, 318, current source, 320, efferent, 371, the grid voltage control part, 372, determined transistor, 374, the 1st switch, 376, the 2nd switch, 378,380, reset and use transistor, 382, voltage adds portion, 384, nmos pass transistor, 386, the PMOS transistor, 388, capacitor, 390, the output transistor, 392, row selecting transistor, 394, stress adds portion, and 500, wafer, 510, electron device.

Embodiment

Below by the working of an invention mode the present invention is described, but following embodiment does not limit the invention that the claim scope relates to, in addition, be not all characteristics combination of in embodiment, illustrating solution of being invention must have.

Fig. 1 is the configuration example diagrammatic sketch of the management devices 10 that relates to of embodiments of the present invention.Management devices 10 is managed each process units of the use in each road production process at the line 100 of managing production by the quilt of multiple tracks production process production electron device.In this example, management devices 10 is by the characteristic of benchmark Devices Characteristics and comparator device, judge whether this process units is good, the benchmark device is produced by predetermined benchmark production line 200, comparator device is handled the production process of being implemented by the process units that should manage by the line 100 of being managed production, by producing after benchmark production line 200 other production processes of processing.

By the line 100 of being managed production, produce electron device by the multiple tracks production process.These production processes for example can be categorized as element separation circuit group 110, element forms operation group 114 or distribution forms operation group 118.For example can be included among market provides the device production system 20 that the producer of electron device has by the line 100 of managing production.Device production system 20 disposes the line 100 of being managed production, assembling procedure group 120 and test step group 130, carries out production, assembling and the test of electron device.

Assembling procedure group 120 is partitioned into encapsulation then to electron device from the wafer of being produced by the line 100 of managing production.Assembling procedure group 120 can realize by a plurality of apparatus for assembling, comprise from wafer cut apart each electron device crossed process, electron device be installed to pressure knot operation on the packaging part, the distribution toe-in that connects chip and packaging part closes operation, is sealed into the sealing process of gas etc. to packaging part.

Test step group 130 implements the testing current, logic testing of the electron device that as product encapsulation changed etc., removes defective products.Test step group 130 can realize by one or more proving installations.

Benchmark production line 200 can implement with by the identical multiple tracks production process of the line 100 of managing production.For example, benchmark production line 200 has element separation circuit group 210, element forms operation group 114 and distribution forms operation group 218.Benchmark production line 200 can be measured the characteristic of each process units that uses in each road production process in advance, guarantees that each process units works well.Benchmark production line 200 both can be the production line that common detection mechanism has, and also can be the production line that device producer has.In addition, can also be the production line that testing agency that the person of needs through electron device authenticated has.

Managed production line 100 and benchmark production line 200 by multiple tracks production process production electron device.In the present embodiment, these production line productions form the wafer of electron device.In addition, these production lines, for the purpose of the product quality in each production process of management, production has the wafer that contains a plurality of determined transistorized mensuration circuit.Herein, these production lines both can form electron device and test circuit under released state, also can form test circuit in the inside of electron device.

Management devices 10 disposes datum characteristic determination part 140, comparative characteristic determination part 142, characteristic comparing section 150, detection unit 160 and comparator device production controlling part 170. datum characteristic determination parts 140 and obtains the benchmark Devices Characteristics of producing by behind the benchmark production line processing all process steps. and datum characteristic determination part 140 can be measured for example electrical characteristics of benchmark device.

Comparator device production controlling part 170 production comparator device make at least one production process in the multiple tracks production process of the line 100 process for producing electron devices of being managed production, and make benchmark production line 200 handle other production processes.Comparator device production controlling part 170 is specified the production process that should be handled comparator device in manage production line 100 and the benchmark production line 200 respectively.In addition, comparator device production controlling part 170 also can send comparator device to implement this production process process units, implements the control to this process units action.Comparator device production controlling part 170 can be provided with respectively on the benchmark production line 200 and the line 100 of being managed production.In addition, comparator device production controlling part 170 can be provided with the means that transmit the electron device in the production run at managed

production line

100 and 200 of benchmark production lines.

Comparative characteristic determination part 142 is measured the characteristic of comparator device.Datum characteristic determination part 140 is measured each Devices Characteristics at the identical project of the benchmark Devices Characteristics that obtains with datum characteristic determination part 140.For example, datum characteristic determination part 140 and comparative characteristic determination part 142 are obtained same electrical characteristics at the TEG that is provided with in the device separately (Test Element Group).

The project of the device property that datum characteristic determination part 140 and comparative characteristic determination part 142 should be obtained can be predesignated, in addition, both can also can notify datum characteristic determination part 140 project that should obtain by datum characteristic determination part 140 the project notice comparative characteristic determination part 142 that should obtain by comparative characteristic determination part 142.

The benchmark Devices Characteristics that characteristic comparing section 150 benchmark characteristic measurement portions 140 obtain, and the characteristic of the comparator device of comparative characteristic determination part 142 mensuration.Whether the property difference that detection unit 160 compares according to characteristic comparing section 150, the quilt of the determination processing comparator device process units that uses in the production process of line 100 of managing production is good.For example, detection unit 160 can be judged to be this process units well under the situation of this property difference in preset range, under the situation of this property difference outside preset range, this process units can be judged to be bad.In addition, detection unit 160 is preferably notified the user of the line 100 of being managed production this result of determination.

Adopt above-mentioned formation, can judge accurately whether this process units is good.In addition, owing to can accomplish by the electrical characteristics of comparator device, thereby can judge easily whether this process units is good.

The managed production configuration example diagrammatic sketch of line 100 of Fig. 2.In addition, the formation of the line 100 of being managed production shown in this example, but the formation of benchmark production line 200 is also identical therewith.As mentioned before, the line 100 of being managed production forms among operation group 114 and the distribution formation operation group 118 at element separation circuit group 110, element, has a plurality of process units 105 respectively.Each process units 105 is implemented corresponding production process.

105 pairs of each process units provide the wafer that comes to implement predetermined process, and give follow-up process units 105 wafer handling.By in each process units 105, handling successively, can on wafer, form electron device.In addition, under the situation of production comparator device, each process units 105 is according to the control of comparator device production controlling part 170, individual processing wafer.On the process units 105 that moves for the production comparator device, can the wafer that should form comparator device be sent from benchmark production line 200 according to the control of comparator device production controlling part 170.In addition, the wafer of handling through this process units 105 can send benchmark production line 200 according to the control of comparator device production controlling part 170 to.

By this kind control, can produce and in by the line 100 of managing production, handle corresponding production process at the process units of being selected in the line 100 by managing production to manage 105, in benchmark production line 200, handle the comparator device of other production process.

In addition, element separation circuit group 110, element form operation group 114 and distribution and form operation group 118 and can carry out following processing respectively. element separation circuit group 110 (separation circuit group) make on the substrate (wafer) various elements such as transistor by one or more process units 105 between configuring area each other electricity separate. element forms operation group 114 and passes through one or more process units 105 form each element on wafer.

Element separation circuit group 110 and element form operation group 114 can be referred to as to form device substrate operations such as transistor on substrate, can be referred to as operation (FEOL:Front End Of the Line) in early stage in addition.Distribution forms operation group 118 and forms between the element that forms on the connecting wafer or the distribution between element and terminal by one or more process units 105.Distribution forms operation group 118 also can be referred to as to form distribution on the substrate that forms element distribution operation, can be referred to as subsequent handling (BEOL:Back End Of the Line) in addition.

Element separation circuit group 110, element form operation group 114 and distribution formation operation group 118 produces each operation group's thing as a result by following a kind of operation or combination working procedures.Herein, the process units more than 1 or 2 105 is implemented the processing of following each operation.In addition, the multiple tracks that also can implement in the following operation of 1 process units 105 is handled.

(1) matting

This is the operation by cleaning base plate surfaces such as the particle of removing substrate surface or metallic pollutions, can use wet-cleaned or dry method to clean.

(2) thermal treatment (Thermal Process)

This is the operation of heating chip.Have so that to form heat oxide film be the thermal oxidation technology of purpose and be the annealing process etc. of the activate after the ion injection.

(3) doping operation

Its impurity mixes substrate, for example, by ion injection etc. boron (B) or phosphorus impurity such as (P) is mixed semiconductor substrates such as silicon substrate, forms PN junction etc.

(4) film formation process (film formation operation)

On substrate, deposit films such as Si oxide film, Si nitride film, poly-silicon fiml, Cu film by CVD (chemical vapor deposition Chemical Vapor Deposition), PVD (physical vapour deposition (PVD) Physical Vapor Deposition), coating coating, plating etc.

(5) photo-mask process is coated with photoresist on substrate, utilize mask graph exposure after, photoresist developing.

(6) etching work procedure

On the lower membrane of photoresist, removed by development after the part that exposes behind the photoresist removes by etching, remove photoresist.Use plasma etching method, reactive ion etching (RIE) method etc.

(7) planarization operation

Grind substrate surface, make it planarization.Use CMP (chemically mechanical polishing Chemical and MechanicalPolishing) method etc.

For example, DRAM (dynamic RAM Dynamic RAM) can produce through for example 500～600 procedures.In addition, CMOS-LSI can produce through for example 300～400 procedures.Comparator device production controlling part 170 can be selected certain the road production process in above-mentioned, makes the process units corresponding with this production process 105 action in the line 100 of being managed production.

Fig. 3 is the illustration process flow diagram of management devices 10 actions.At first, obtain among the stage S600 at datum characteristic, datum characteristic determination part 140 is obtained the benchmark Devices Characteristics.Then, in comparator device production phase S602, comparator device production controlling part 170 is produced and is judged whether good a part of production process uses the line 100 of being managed production to handle the comparator device that other production process is handled with benchmark production line 200 to corresponding process units.

Then, in comparative characteristic was measured stage S604, comparative characteristic determination part 142 was measured the characteristic of comparator device.Then, in characteristic comparison phase S606, the special part of characteristic comparing section 150 benchmark Devices Characteristics and comparator device.

And in decision stage S608, whether detection unit 160 is judged by the process units that uses in the line 100 of managing production good according to this comparative result.By this kind processing, promptly whether this process units of decidable is good.In addition, the production line managed of the device producer management method that also can illustrate when being related to Fig. 3 is produced electron device.

Fig. 4 illustrates device producer to have the line 100 of being managed production, the processing flow chart when outside testing agency has benchmark production line 200.In the case, testing agency can have management devices 10.

At first, testing agency measures the characteristic (S610) of the multiple process units 105 that uses in the benchmark production line 200 in advance.And guarantee each process units 105 all good (S612) in advance.In S610 and S612, testing agency measures the electrical characteristics of the electron device of producing with benchmark production line 200, when in the allowed band that the electrical characteristics of this electron device are being scheduled to, can guarantee that each process units 105 is good.In addition, testing agency makes each process units 105 handle the wafer of stipulating, in the time of in the expected range that the difference of the wafer characteristics after handling preceding wafer characteristics and handling is being scheduled to, can guarantee that this process units 105 is good.In addition, testing agency handles a plurality of wafers in S610, when the characteristic of all wafers is all in predetermined allowed band, can guarantee that each process units 105 is good.

Then, the device producer quilt of constructing the electron device that production can sell to the market line 100 (S614) of managing production.Device producer is the manage production information notice testing agency (S616) of each process units 105 of containing in the line 100 of the quilt constructed.

Testing agency obtains by the information (S616) of the process units 105 that uses in the line 100 of managing production, and constructs and the quilt identical benchmark production line 200 (S620) of line 100 of managing production according to this information.At this moment, testing agency uses by S612 and guarantees good process units 105, constructs benchmark production line 200.In addition, in other example, testing agency also can implement the processing of S610 and S612 to the process units 105 of constructing benchmark production line 200 after constructing benchmark production line 200.

Testing agency produces benchmark device (S620) by the benchmark production line of constructing 200.In addition, testing agency measures the benchmark Devices Characteristics of producing (S622).And whether good device producer select to be needed in the line 100 of managing production to judge process units 105, notice testing agency (S624).

Testing agency handles wafers by benchmark production line 200 till the preceding production process together of the production process corresponding with the process units notified 105, generate the intermediate product (S626) of comparator device.And testing agency delivers device producer (S628) to the wafer of handling among the S626.

Device producer is handled the wafer of receiving (S630) by the corresponding process units 105 of the line 100 of being managed production.And device producer is delivered testing agency (S632) to the wafer of handling with this process units 105.

Testing agency handles remaining production process of the wafer of receiving by benchmark production line 200, produces comparator device (S634).And by measuring the characteristic (S636) of comparator device, and compare with the benchmark Devices Characteristics, judge this process units 105 whether good (S638).And testing agency is the result of determination of this process units 105 notice device producer.By this kind processing, device producer can guarantee whether this process units 105 is good by external agency.

Fig. 5 illustrates in many production lines that device producer has, and makes a production line have the function of benchmark production line 200, and all the other production lines then have the processing flow chart when being managed production line 100 functions.In this example, many production lines having of device producer are produced electron device by same production process.

At first produce electron device, and measure the characteristic (S642) of the electron device of producing respectively by each bar production line.Then, according to the characteristic of the electron device that determines, selection reference production line 200 (S644) from many production lines.For example the characteristic of the electron device of producing is elected to be benchmark production line 200 near the production line of pre-determined reference value.At this moment, also can in each bar production line, produce a plurality of electron devices, calculate the mean value of the electronic device characteristics of each bar production line, select this mean value near the production line of this reference value.

And other production line that is not selected as benchmark production line 200 in many production lines as being managed (S646) by the line 100 of being managed production.Management among the S646 can be implemented at each bar production line by processing shown in Figure 3.

Fig. 6 is the illustration figure by the upper surface of the wafer 500 that is formed a plurality of electron devices 510 by manage production line 100 or benchmark production line 200.The purpose of line 100 for the management of line management or finished product of being managed production can be produced to have separately and contained a plurality of transistorized a plurality of test circuits 300, and the wafer 500 of a plurality of electron device 510.Electron device 510 is to can be used as the product device that the real work device is confessed factory.

Test circuit 300 also can be located on the boundary line of each electron device 510.A plurality of in the case test circuits 300 also can be arranged on 510 of electron devices, when cutting a plurality of electron device 510 in the cropped zone.In addition, test circuit 300 also can be arranged on the inside of electron device 510.In addition, when being under the wafer situation of using in the line management, also can only form a plurality of test circuits 300 on wafer 500 surfaces.Datum characteristic determination part 140 and comparative characteristic determination part 142 can be measured the electrical characteristics with the test circuit 300 of benchmark device or the corresponding formation of comparator device.

Said datum characteristic is obtained stage S600 and comparator device production phase S602 and is produced by the multiple tracks production process and have electron device or the wafer that is related to Fig. 7 or the said test circuit of Figure 11 among Fig. 3.

Fig. 7 illustrates an example of the circuit formation of test circuit 300.This test circuit 300 is set at can efficiently measure a plurality of determined transistors 314 electrical characteristics separately.So datum characteristic determination part 140 and comparative characteristic determination part 142 can obtain the determined transistorized sample number of the mensuration electrical characteristics of sufficient amount.Datum characteristic determination part 140 and comparative characteristic determination part 142 characteristic of benchmark device and comparator device accurately consequently.

Test circuit 300 has: column selection portion 302, row selection portion 304, a plurality of column selection transistor (306-1,306-2, hereinafter be referred to as 306), a plurality of current source (318-1,318-2, hereinafter be referred to as 318), efferent 320 and a plurality of unit (310-1～310-4 hereinafter is referred to as 310).Column selection transistor 306 also comprises a plurality of current sources (318-1～2), and it is listed as corresponding setting with each of a plurality of unit 310, and electric current is flowed between the source drain of having been imported unit 310 appointments of selecting signal by row selection portion 304.

A plurality of unit 310 are examples of the determined circuit that the present invention relates to, in 500 of wafers, are ranks two-dimensional matrix shape and arrange.And a plurality of unit 310 are set up in parallel respectively along the line direction and the column direction of two-dimensional matrix.Among this example, the circuit that line direction and column direction respectively are provided with two unit 310 is shown, but more unit 310 can be set on line direction and column direction.In addition, a plurality of cut zone settings can be crossed in a plurality of unit 310.For example, each cut zone has line direction 128 row, the unit 310 of column direction 512 row.In the case, the technological procedure of the element that contains in the unit 310 and device specification also can have nothing in common with each other in each cut zone.

Each unit 310 has determined transistor 314, switch transistor 312 and row selecting transistor 316.The transistor of each unit 310 also can be a MOS transistor of using the actual act transistor same process formation that has with electron device 510.

The determined transistor 314 of each unit 310 is with electric form setting in parallel each other.Determined transistor that present embodiment relates to 314 is that example is illustrated with the nmos pass transistor.In addition, determined transistor 314 also can be the PMOS transistor, in the case, and the circuit that also can use source electrode and drain electrode to exchange each other.

On the reference voltage side terminal of a side among the drain terminal of each determined transistor 314 and the source terminal, can import predetermined reference voltage V _DD. in each unit 310, the reference voltage of outside input is offered the distribution of determined transistorized reference voltage side terminal, have function as the reference voltage input part that the present invention relates to. herein, the reference voltage side terminal is under the situation of nmos pass transistor at determined transistor 314, it can be drain terminal, be under the transistorized situation of PMOS, though can be source terminal. provide the terminal of trap voltage of determined transistor 314 not shown, but the trap voltage terminal both can be connected with earthing potential, in addition, also can be set at each transistorized trap voltage of independent control, the trap voltage terminal of determined transistor 314 is connected with source terminal. voltage V shown in Figure 7 _DD, voltage V _G, voltage

Voltage V _REFCan offer test circuit 300 by datum characteristic determination part 140 shown in Figure 1 or comparative characteristic determination part 142.

The switch of each unit 310 with transistor 312 can with the determined transistor 314 corresponding settings of each unit.Each switch has function as the grid voltage control part with transistor 312, and the grid voltage of its datum

characteristic determination part

140 or 142 appointments of comparative characteristic determination part adds to the gate terminal of corresponding separately determined transistor 314 outward.Among this example, switch is under the situation of nmos pass transistor with transistor 312, has been provided the voltage V that predesignates on the drain terminal of switch with transistor 312 _G, be provided the voltage of gauge tap on the gate terminal with transistor 312 actions

Source terminal can be connected with the gate terminal of determined transistor 314.That is, switch is passing through voltage with transistor 312

Be controlled as under the situation of on-state, with voltage V _GVoltage about equally adds to the gate terminal of determined transistor 314 outward, and the voltage that the following initial voltage of situation that is controlled as off-state roughly is drifting state adds to the gate terminal of determined transistor 314 outward.

In Fig. 7, illustrate to all unit 310 unified impressed voltages

Example, but in other example, the leakage time when making the PN junction leakage current measuring is all identical in all unit, also can be voltage

From capable selection portion 304, add to each unit 310 arranged side by side on column direction successively outward as pulse signal.

The row selecting transistor 316 of each unit 310 can corresponding setting with the determined transistor of each unit.Each row selecting transistor 316 has the function of terminal voltage efferent, it is so that 310 outside input select signal is a condition from the unit, in the drain terminal of determined transistor 314 and source terminal, the terminal voltage of the terminal beyond the reference voltage side terminal is exported as output signal.In this example, row selecting transistor 316 is under the transistorized situation of PMOS, and the source terminal of each row selecting transistor 316 is connected with the drain terminal of determined transistor 314.In addition, the drain terminal of row selecting transistor 316 connects with the drain terminal of corresponding column selection transistor 306.That is, the drain terminal of each column selection transistor 306 connects with the drain terminal of corresponding a plurality of row selecting transistors 316.

Row selection portion 304 is selected signal to unit 310 outputs that the row of appointment is corresponding in a plurality of unit 310 that two-dimensional matrix is arranged.So, going selection portion 304 selects 310 groups of a plurality of unit (in this example, one-element group (310-1,310-2) and one-element group (310-3,310-4)) of being provided with along column direction successively.In addition, column selection portion 302 selects and is arranged in the unit of having imported on the row of selecting signal more than 2 310, makes it to export to output signal line behind the terminal voltage of the unit 310 corresponding with the row of appointment.So, column selection portion 302 selects to follow a plurality of unit 310 groups of (one-element group in this example (310-1,310-3) and one-element groups (310-2,310-4) that direction is provided with successively.Utilize this kind formation, row selection portion 304 and column selection portion 302 can select each unit 310 successively.

In this example, row selection portion 304 is selected on corresponding each line position of data the row selecting transistor 316 that is provided with in the one-element group of each row to be controlled to be on-state successively at the row that provides with datum characteristic determination part 140 or comparative characteristic determination part 142.In addition, column selection portion 302 is on each corresponding column position of the column selection data that provide with datum characteristic determination part 140 or comparative characteristic determination part 142, being controlled to be on-state successively with the column selection transistor 306 of the corresponding setting of one-element group of each line direction.So, column selection portion 302 and row selection portion 304 can have the function of the selection portion that the present invention relates to, and the output signal of measuring a unit 310 of control part 146 appointments is exported by common output signal line that be provided with, that connect each column selection transistor 306 and efferent 320 and efferent 320 on a plurality of unit 310.

Datum characteristic determination part 140 or comparative characteristic determination part 142 offer capable selection portion 304 and column selection portion 302. to the selection signal of selecting each unit 310 successively in addition, column selection portion 302 and row selection portion 304 also can comprise the circuit of detuner and axle counter etc., this circuit is used for selecting column selection data of receiving and row data conversion to be and the corresponding selection signal in the position of the unit 310 that should select. and selection signal herein is meant handle and selects the unit 310 pairing column selection transistor 306 and the row selecting transistors 316 of data corresponding selection, is controlled to be the signal of on-state.

Utilize this kind formation, datum characteristic determination part 140 or comparative characteristic determination part 142 are selected the determined transistor 314 of setting in each unit 310 successively.The terminal voltage that can make the determined transistor of selecting successively 314 like this is successively to efferent 320 outputs.Efferent 320 is to datum characteristic determination part 140 or comparative characteristic determination part 142 lead-out terminal voltage successively.Efferent 320 for example also can be a voltage slave buffer device.Datum characteristic determination part 140 or comparative characteristic determination part 142 be according to the terminal voltage of each determined transistor 314, measures the electrical characteristics such as threshold voltage, current-voltage characteristic, low-frequency noise, PN junction leakage current of determined transistor 314.

In addition, each current source 318 is to receive predetermined voltage V on gate terminal _REFMOS transistor.The drain terminal of each current source 318 connects with the drain terminal of corresponding a plurality of row selecting transistors 316.That is, a plurality of determined transistor 314 that is provided with on 318 pairs of same column positions of each current source is provided with jointly, electric current between the source drain of the determined transistor 314 that qualification is corresponding.

If adopt circuit shown in Figure 7 to constitute, in each test circuit 300, owing to can electrically select a plurality of determined transistors 314 successively, export the terminal voltage of selected determined transistor 314 successively, thereby can measure the terminal voltage of each determined transistor 314 at short notice at a high speed.Therefore, even be provided with on the wafer 500 under the situation of a plurality of determined transistors 314, still can measure all determined transistors 314 at short notice.

Therefore, datum characteristic determination part 140 or comparative characteristic determination part 142 can be efficiently and are measured the electrical characteristics of benchmark device or comparator device accurately.In this example, the determined transistor 314 about 10,000～1,000 ten thousand can be set in the face of wafer 500.By a plurality of determined transistors 314 are measured, can calculate the characteristic error of determined transistor 314 accurately.

Fig. 8 example illustrates the characteristic as benchmark device or comparator device, the datum characteristic determination part 140 when measuring the error of threshold voltage of each determined transistor 314 or the action of comparative characteristic determination part 142.

At first, datum characteristic determination part 140 or comparative characteristic determination part 142 provide the voltage that illustrated among Fig. 7 V for test circuit 300 _DD, voltage V _G, voltage

Voltage V _REF(S440).At this moment, datum characteristic determination part 140 or comparative characteristic determination part 142 have the function of current control division, rated voltage V are provided for each current source 318 _REF, make each current source 318 generate same rated current.In addition, datum characteristic determination part 140 or comparative characteristic determination part 142 provide the grid voltage V that determined transistor 314 is controlled to be on-state _G, and the voltage that each switch is controlled to be on-state with transistor 312

By this kind control, measure control part 140 or comparative characteristic determination part 142 and have the function of grid control part, add the grid voltage that this determined transistor 314 is controlled to be on-state for the gate terminal of each determined transistor 314.

Then, datum characteristic determination part 140 or comparative characteristic determination part 142 provides the selection data (S442) of the determined transistor 314 that selection should measure threshold voltage for column selection portion 302 and row selection portion 304.So, datum characteristic determination part 140 or comparative characteristic determination part 142 can be selected a plurality of unit 310 successively by column selection portion 302 and row selection portion 304.And datum characteristic determination part 140 or comparative characteristic determination part 142 are measured the output voltage (S444) of efferent 320.So, datum characteristic determination part 140 or comparative characteristic determination part 142 can be according to the output signal of selected unit 310 to output signal line output, measure the electrical characteristics of the determined transistor 314 that each unit 310 has.

Then, datum characteristic determination part 140 or comparative characteristic determination part 142 are according to the grid voltage V that adds to this determined transistor 314 outward _G, and the output voltage of efferent 320, calculate the threshold voltage (S446) of each determined transistor 314.The threshold voltage of determined transistor 314 can be by calculating for example grid voltage V _GWith the difference of output voltage, the gate source voltage across poles of promptly determined transistor 314 obtains.

Then, datum characteristic determination part 140 or comparative characteristic determination part 142 judge whether all determined transistors 314 have all been measured threshold voltage (S448). under the situation that also has undeterminate determined transistor 314, select next determined transistor 314, repeat the processing of S444 and S446. when to all determined transistor 314 all measured under the situation of threshold voltage, datum characteristic determination part 140 or comparative characteristic determination part 142 calculate the error (S450) of threshold voltage.

By this kind action, can efficiently measure the error of the threshold voltage of a plurality of determined transistors 314.In addition, also can in each technological procedure, measure the error of the threshold voltage of determined transistor 314.In addition, can measure the error profile of wafer 500 lip-deep threshold voltages by a plurality of test circuits 300 that are provided with on the wafer 500 are measured.

Fig. 9 example illustrates in the characteristic as benchmark device and comparator device, when measuring the current-voltage characteristic of each determined transistor 314, the action flow chart of datum characteristic determination part 140 or comparative characteristic determination part 142.

Voltage V _REF(S400).At this moment, datum characteristic determination part 140 or comparative characteristic determination part 142 provide rated voltage V for each current source 318 _REF, make each current source 318 generate same rated current.In addition, datum characteristic determination part 140 or comparative characteristic determination part 142 provide the grid voltage V that determined transistor 314 is controlled to be on-state _G, and the voltage that each switch is controlled to be on-state with transistor 312

Then, datum characteristic determination part 140 or comparative characteristic determination part 142 provides the selection data (S402) of the determined transistor 314 that selection should measure current-voltage characteristic for column selection portion 302 and row selection portion 304.And datum characteristic determination part 140 or comparative characteristic determination part 142 make V with the resolution of regulation in specialized range _REFChange (S406～S408).At this moment, datum characteristic determination part 140 or comparative characteristic determination part 142 are at each V _REFMeasure the output voltage (S404) of efferent 320.That is, datum characteristic determination part 140 or comparative characteristic determination part 142 make that electric current changes successively between the source drain that current source 318 generates, and measure the source voltage of determined transistor 314 on electric current between each source drain.Can measure the current-voltage characteristic of determined transistor 314 like this.

And judge and whether measured all determined transistor 314 current-voltage characteristics (S410).Under undeterminate determined transistor situation, repeat the processing of S400～S410.At this moment, in S402, select next determined transistor 314.

When to all determined transistor 314 all measured under the current-voltage characteristic situation, datum characteristic determination part 140 or comparative characteristic determination part 142 calculate the error (S412) of current-voltage characteristic.For example, datum characteristic determination part 140 or comparative characteristic determination part 142 calculate the mutual conductance gm of each current-voltage characteristic, calculate the error of this mutual conductance gm.In addition,, calculate swing inclination angle and silicon gate interfacial insulating film level density, calculate error according to the current-voltage characteristic of critical zone.

Figure 10 example illustrates the characteristic as benchmark device and comparator device, when measuring the error of PN junction leakage current of each determined transistor 314, the process flow diagram of the action of datum characteristic determination part 140 or comparative characteristic determination part 142.

Each switch has the PN junction that can connect with the gate terminal of corresponding determined transistor 314 with transistor 312.In this example, measure leakage current in this PN junction.

Voltage V _REF(S460).At this moment, datum characteristic determination part 140 or comparative characteristic determination part 142 provide specified voltage V for each current source 318 _REF, make each current source 318 generate same rated current.In addition, datum characteristic determination part 140 or comparative characteristic determination part 142 provide the grid voltage V that determined transistor 314 is controlled to be on-state _G, and the voltage that each switch is controlled to be on-state with transistor 314

In addition, by providing pulse signal successively to each unit 310 arranged side by side on the line direction, can be the leakage current measuring time set of all unit same from row selection portion 304.

Then, datum characteristic determination part 140 or comparative characteristic determination part 142 provides the selection data (S462) of the determined transistor 314 that selection should measure the PN leakage current for column selection portion 302 and row selection portion 304. and, 142 of datum characteristic determination part 140 or comparative characteristic determination parts and selected determined transistor 314 corresponding switches are controlled to be off-state (S464) with transistor 312. and promptly, datum characteristic determination part 140 or comparative characteristic determination part 142 make each switch be controlled to be the grid voltage of on-state with 312 in transistor and corresponding determined transistor 314 and determined transistor 314 are controlled to be the grid voltage of off-state is outer successively to add to determined transistor 314.

Then, 142 pairs of these determined transistors 314 of datum characteristic determination part 140 or comparative characteristic determination part, the source voltage when measuring on-state and switch to off-state from on-state after, through the source voltage (S466) after the stipulated time.In this example, datum characteristic determination part 140 or comparative characteristic determination part 142 are measured the variation of the output voltage of the efferent 320 in this stipulated time.

Then, datum characteristic determination part 140 or comparative characteristic determination part 142 calculate the leakage current (S468) in the PN junction according to the variation of source voltage.When switch is in on-state with transistor 312, storing in the grid capacitance of determined transistor 314 and the corresponding electric charge of grid voltage.And when switch switched to off-state with transistor 312, the electric charge of grid capacitance was by the discharge of the leakage current in the PN junction.Therefore, the size of PN junction leakage current depends on the variable quantity of the source voltage of the determined transistor 314 in the stipulated time.

Then, all determined transistors 314 are judged whether measured PN junction leakage current (S470).Under undeterminate determined transistor 314 situations, repeat the processing of S462～S470.At this moment, in S462, select next determined transistor 314.When to all determined transistors 314, all to have measured under the PN junction leakage current situation, datum characteristic determination part 140 or comparative characteristic determination part 142 calculate the error (S472) of PN junction leakage current.

Figure 11 illustrates another example that the circuit of each unit 310 that test circuit 300 has constitutes.Circuit in this example adds electric stress for determined transistor 372, utilizes and adds under certain electric field status for the gate insulating film of determined transistor 372, and the grid leakage current of determined transistor 372 discharges and recharges capacitor 388.And datum characteristic determination part 140 or comparative characteristic determination part 142 be the variation of the magnitude of voltage of the capacitor 388 in the time according to the rules, calculates the grid leakage current of each determined transistor 372.

The circuit of the test circuit 300 in this example constitutes, and with respect to the circuit formation of test circuit shown in Figure 7 300, the formation of each unit 310 has nothing in common with each other.In Figure 11, the formation of each unit 310 of test circuit 300 is shown, about column selection portion 302, row selection portion 304, a plurality of column selection transistor (306-1,306-2, below be referred to as 306), a plurality of current source (318-1,318-2, below be referred to as 318) and efferent 320, because of identical with Fig. 7, the Therefore, omited.

Each unit 310 has stress and adds portion 394, determined transistor 372, grid voltage control part the 371, the 1st switch the 374, the 2nd switch 376, voltage and add portion 382, capacitor 388, row selecting transistor 392, reset with transistor 378,380 and output with transistor 390.

Stress adds portion 394 and adds electric stress for the gate insulating film of determined transistor 372 by the 1st switch 374.For example, when determined transistor 372 was used as the memory element of FLASH storer, stress added portion 394 and adds for determined transistor 372 to write data, eliminates the required voltage of data.

When stress added portion's 394 applied stresses, stress added portion 394 by connecting the 1st switch 374, made the source terminal of determined transistor 372 and drain terminal add portion 394 with stress respectively and was connected.In addition, datum characteristic determination part 140 or comparative characteristic determination part 142 make the 2nd switch 376 be in off-state.By this kind control, stress adds portion 394 and adds required voltage, applied stress can for each terminal of determined transistor 372.

In this example, stress adds portion 394 and gives determined transistor 314 independences or add following 4 kinds of stress successively.

(1) FN (Fowler-Nordheim) grid injection (Gate injection)

(2) FN substrate injection (Substrate injection)

(3) injection of hot electrons (Hot Electron injection)

(4) source electrode is eliminated (Source Erase)

Above-mentioned (1)～(4) are by data being write determined transistor 372, or eliminate the data of determined transistor 372, give the method for determined transistor 372 applied stresses.Herein, stress adds portion 394 and data was write determined transistor 372 both can be actual act the time, or the voltage that should add when eliminating determined transistor 372 adds to each terminal of determined transistor 372 outward, and also the big voltage of voltage that can should add than actual act the time adds to each terminal of determined transistor 372 outward.

In addition, can provide reset signal by datum characteristic determination part 140 or comparative characteristic determination part 142 in each unit 310

Control voltage V _RN, V _RP, V _R1, V _R2, V _DDAnd grid voltage V _GGrid voltage control part 371 adds the grid voltage V of datum

characteristic determination part

140 or 142 appointments of comparative characteristic determination part for the gate terminal of determined transistor 372 _G

Whether the 2nd switch 376 adds portion's 382 switchings by voltage and the source terminal of determined transistor 372 and drain terminal is connected with capacitor 388.Voltage adds portion 382 and adds certain voltage for the source terminal and the drain terminal of determined transistor 372 by the 2nd switch 376.When by datum characteristic determination part 140 or comparative characteristic determination part 142 the 2nd switch 376 being made as under the on-state situation, voltage adds source terminal and the drain terminal that voltage that portion 382 generates can add to determined transistor 372 outward.That is, voltage adds portion 382 by certain voltage being added to the source terminal and the drain terminal of determined transistor 372 outward, the electric field controls on the gate insulating film that adds to determined transistor 372 outward for roughly certain.

Voltage adds portion 382 and has nmos pass transistor 384 and PMOS transistor 386.Nmos pass transistor 384 is added and the corresponding grid voltage V of voltage on source terminal that should add to determined transistor 372 and the drain terminal _RN, source terminal is connected with the source terminal and the drain terminal of determined transistor 372 by the 2nd switch 376, and drain terminal is connected with capacitor 388.In addition, PMOS transistor 386 is arranged in parallel with nmos pass transistor 384, and quilt is added and should add to the source terminal of determined transistor 372 and the corresponding grid voltage V of voltage of drain terminal outward _RP, drain terminal is connected with the source terminal and the drain terminal of determined transistor 372 by the 2nd switch 376, and source terminal is connected with capacitor 388.Even because of grid leakage current accumulation, current potential changes in nmos pass transistor 384 and PMOS transistor 386 capacitors 388, still can between the gate-source that is applied to determined transistor 372 or the voltage between grid drain electrode roughly keep certain.

By this kind formation, no matter determined transistor 372 is P type or N type, all can add certain electric field on the gate insulating film of determined transistor 372, in addition, also can utilize the grid leakage current of determined transistor 372 that capacitor 388 is discharged and recharged.

Capacitor 388 can utilize from the grid leakage current of the source terminal of determined transistor 372 and drain terminal output and discharge and recharge.That is, capacitor 388 stores the grid leakage current that flows to source terminal and drain terminal from gate terminal, is transformed to magnitude of voltage.In addition, reset and on gate terminal, receive reset signal with transistor 378,380 Under the situation, the magnitude of voltage in the capacitor 388 is just turned to the voltage V of regulation _R1

Output is accepted voltage in the capacitor 388 with transistor 390 on gate terminal, output and the corresponding source voltage of this voltage.Row selecting transistor 392 is a condition with the selection signal of having imported capable selection portion 304 and providing, and gives the source voltage of column selection transistor 306 output outputs with transistors 390.So, output can have the function of the condenser voltage of the end of source terminal in the capacitor 388 and drain terminal side as the condenser voltage efferent of output signal output with transistor 390 and row selecting transistor 392.

Figure 12 example illustrates the characteristic as benchmark device or comparator device, when measuring the grid leakage current of each determined transistor 372, the action of datum characteristic determination part 140 or comparative characteristic determination part 142. before the grid leakage current of measuring each determined transistor 372, at first, datum characteristic determination part 140 or comparative characteristic determination part 142 add electric stress for the determined transistor 372 of each unit 310.

At this moment, datum characteristic determination part 140 or comparative characteristic determination part 142 are controlled to be on-state to the 1st switch 374, and the 2nd switch 376 is controlled to be off-state.And the stress of datum characteristic determination part 140 or comparative characteristic determination part 142 each unit 310 of control adds portion 394, makes stress be added on determined transistor 372 outward.In addition, datum characteristic determination part 140 or comparative characteristic determination part 142 also can add to determined transistor 372 the stress of (1) that illustrated among Figure 10～(4) independence or successively.In addition, datum characteristic determination part 140 or comparative characteristic determination part 142 are given the determined transistor 372 of each unit 310, roughly while applied stress.

Implement after the above action, datum characteristic determination part 140 or comparative characteristic determination part 142 are selected each determined transistor 372 successively, the grid leakage current of the determined transistor 372 that mensuration is selected, but, thereby omit its explanation because that the selection that illustrated among the selection action of determined transistor 372 and Fig. 8 and Fig. 9 is moved is identical.In this example, be illustrated at the action of the grid leakage current of measuring a determined transistor 372.

At first, datum characteristic determination part 140 or comparative characteristic determination part 142 are controlled to be off-state to the 1st switch 374, and the 2nd switch 376 is controlled to be on-state.And datum characteristic determination part 140 or comparative characteristic determination part 142 add the grid voltage (S416) that is roughly zero V for the gate terminal of determined transistor 372.At this moment, do not produce grid leakage current in the determined transistor 372.

Then, datum characteristic determination part 140 or comparative characteristic determination part 142 are set at the voltage of capacitor 388 initial voltage value of regulation.At this moment, datum characteristic determination part 140 or comparative characteristic determination part 142 reset with transistor 380 by control, set initial voltage V for capacitor 388 _R1This setting can be controlled to be the reset signal of on-state resetting by providing with transistor 378,380

Carry out.

Then, datum characteristic determination part 140 or comparative characteristic determination part 142 are set at the voltage of capacitor 388 after the initial voltage value, read in the stipulated time variation of the magnitude of voltage of capacitor 388 (S418).At this moment, datum characteristic determination part 140 or comparative characteristic determination part 142 make column selection portion 302 and row selection portion 304 select this unit 310.In addition, datum characteristic determination part 140 or comparative characteristic determination part 142 receive the voltage of the voltage of efferent 320 outputs as capacitor 388.

Then, datum characteristic determination part 140 or comparative characteristic determination part 142 be according in this specified time limit, the variable quantity of the voltage of efferent 320 outputs, and the current value (the 1st current value) that calculates the background current of unit 310 is (S420).At this moment, owing to do not produce grid leakage current in the determined transistor 372, thereby capacitor 388 can utilize background current to discharge and recharge.The change in voltage of the capacitor 388 in during therefore, can be is according to the rules measured background current.

Then, datum characteristic determination part 140 or comparative characteristic determination part 142 add the grid voltage (S422) of plus or minus for the gate terminal of determined transistor 372.At this moment, control voltage V _RN, V _RP, the voltage between gate-source that is added on determined transistor 372 outward or grid drain electrode is roughly kept certain.At this moment, produce and the corresponding grid leakage current of grid voltage in the determined transistor 372.

Then, datum characteristic determination part 140 or comparative characteristic determination part 142 are set at the voltage of capacitor 388 initial voltage value of regulation.And datum characteristic determination part 140 or comparative characteristic determination part 142 are set at the voltage of capacitor 388 after the initial voltage value, read in aforesaid specified time limit the variation of the magnitude of voltage of capacitor 388 (S424).

Then, datum characteristic determination part 140 or comparative characteristic determination part 142 are according in this specified time limit, the variable quantity of the magnitude of voltage of capacitor 388, calculate the 2nd current value (S426) of expression background current and grid leakage current sum. at this moment, capacitor 388 can utilize the electric current of background current and grid leakage current sum to discharge and recharge. therefore, the change in voltage of the capacitor 388 in according to the rules can be measured the electric current of background current and grid leakage current sum.

Then, datum characteristic determination part 140 or comparative characteristic determination part 142 are by deducting the current value (S428) that the 1st current value calculates grid leakage current from the 2nd current value that calculates.

As the above, datum characteristic determination part 140 or comparative characteristic determination part 142 as the electrical characteristics of each determined transistor 372, can be measured the voltage of capacitor 388 by output with transistor 390 and row selecting transistor 392.Consequently can get rid of the influence of background current by above-mentioned control, measure the grid leakage current of determined transistor 372 more accurately.In addition, because measuring behind the grid leakage current integration, thereby can measure faint grid leakage current.

Figure 13 is at the line 100 of being managed production, and manages another illustration process flow diagram of the management method of each process units 105 that uses in each road production process.Whether the management method in this example is judged good by the plasma irradiation unit that contains in the line 100 of managing production.

At first, prepare the 1st device and the 2nd device (S648) produced with same production line.The benchmark production line 200 that the 1st device and the 2nd device can illustrate when for example being related to Fig. 1 is produced.In addition, the 1st device and the 2nd device are to have the device that same circuit constitutes, and can have the test circuit 300 that illustrated when being related to Fig. 7 and Figure 11.

Then, utilize the plasma irradiation unit that uses in the benchmark production line 200 to give the 1st device irradiation plasma (S650).In addition, utilize, give the 2nd device irradiation plasma (S652) by the plasma irradiation unit that uses in the line 100 of managing production.

Then, mensuration was shone isoionic the 1st device and the 2nd Devices Characteristics (S654) respectively.In S654, can use the datum characteristic determination part 140 and the comparative characteristic determination part 142 that illustrated when being related to Fig. 1, measure each Devices Characteristics.

Then, compare the 1st Devices Characteristics and the 2nd Devices Characteristics (S656).And, judge whether good by the plasma irradiation unit in the line 100 of managing production according to the 1st device and the 2nd Devices Characteristics difference.This judgement can use the method identical with the detection unit that illustrated with reference to Fig. 1 160 to carry out.Adopt this method decidable whether good by the plasma irradiation unit in the line 100 of managing production.

For example, when these ion exposure devices under the situation that has produced the plasma damage bigger on the nmos pass transistor than reference value, this transistorized threshold voltage diminishes.In addition, when producing on the PMOS transistor under the situation of the plasma damage bigger than reference value, it is big that threshold voltage becomes.Detection unit 160 can judge whether the plasma irradiation unit is good according to the difference of the determined transistorized threshold voltage that contains in the 1st device and the 2nd device.

More than with embodiment the present invention has been described, but technical scope of the present invention is not limited by the scope described in the above-mentioned embodiment.For the soil of people in the industry, obviously can be in addition numerous variations or the improvement of above-mentioned embodiment.The mode that has applied this type of change or improvement still can be included in the technical scope of the present invention, and this can obviously find out in the statement of claim scope.

Industrialization prospect

If employing the present invention, can be correctly and the production line of the electronic device of managing production easily in the process units that uses.

Claims

1. management method is that the management method of managing each process units that uses in each road production process is characterized in that having at the quilt of producing electron device by the multiple tracks production process line of managing production:

Datum characteristic is obtained the stage, and it obtains the benchmark Devices Characteristics, and this benchmark device is by implementing benchmark production line production aforementioned multiple tracks production process, predetermined;

The comparator device production phase, it makes is aforementionedly handled at least one production process in the aforementioned multiple tracks production process by the line of managing production, and makes aforementioned benchmark production line handle other production process, the production comparator device;

Comparative characteristic is measured the stage, and it measures the characteristic of aforementioned comparator device;

The characteristic comparison phase, the characteristic of its comparison of aforementioned benchmark Devices Characteristics and aforementioned comparator device;

Decision stage, its difference according to afore-mentioned characteristics judges whether the aforementioned process units that is used for aforementioned at least one production process is good.

2. management method according to claim 1 is characterized in that: it is obtained at aforementioned datum characteristic and measures aforementioned benchmark Devices Characteristics in the stage.

3. management method according to claim 1, it is characterized in that: also have the assurance stage, the characteristic that it measures a plurality of aforementioned process units that use in the aforementioned benchmark production line in advance guarantees that in advance each the aforementioned process units that uses in the aforementioned benchmark production line is good;

For implementing afore-mentioned characteristics comparison phase and aforementioned decision stage, aforementioned datum characteristic is obtained the stage and is obtained aforementioned benchmark Devices Characteristics, and this benchmark device is by being guaranteed to be good aforementioned process units production in advance in the aforementioned assurance stage.

4. management method according to claim 1 is characterized in that also having:

Information obtains the stage, and it obtains aforementioned by the information of a plurality of aforementioned process units that use in the line of managing production in advance;

The benchmark production line is constructed the stage, and it constructs aforementioned benchmark production line in advance according to the information of aforementioned process units;

For implementing afore-mentioned characteristics comparison phase and aforementioned decision stage, aforementioned datum characteristic is obtained the stage and is obtained aforementioned benchmark Devices Characteristics, and this benchmark device is constructed the benchmark production line production of constructing in the stage by aforementioned benchmark production line.

5. management method according to claim 1 is characterized in that: also have the benchmark choice phase, it selects aforementioned benchmark production line in advance from the multiple tracks production line with same production process production aforementioned electronic device.

6. management method according to claim 5 is characterized in that the aforementioned benchmark choice phase has:

In the mensuration stage, it measures the characteristic of each aforementioned electronic device of producing by the aforementioned production line in each road in advance;

Choice phase, it selects aforementioned benchmark production line in advance according to the characteristic of each aforementioned electronic device from aforementioned multiple tracks production line.

7. management method according to claim 1 is characterized in that:

Aforementioned datum characteristic is obtained the stage, and the aforementioned comparator device production phase is by aforementioned multiple tracks production process production aforementioned electronic device, this electron device has test circuit, this test circuit comprises that being two-dimensional matrix shape arranges, contains determined transistorized a plurality of determined circuit separately, and the output signal of an aforementioned determined circuit that makes appointment is to the selection portion of the common output signal line output that is provided with of aforementioned a plurality of determined circuit;

Aforementioned datum characteristic is obtained the stage and is had:

The transistor choice phase, it selects aforementioned a plurality of determined circuit successively by aforementioned selection portion in the aforementioned test circuit of aforementioned benchmark device;

In the output mensuration stage, the aforementioned determined circuit of selecting in its aforementioned test circuit according to aforementioned benchmark device is measured the aforementioned determined transistorized electrical characteristics that each aforementioned determined circuit has to the aforementioned output signal of aforementioned output signal line output;

The aforementioned comparative characteristic mensuration stage has:

The transistor choice phase, it selects aforementioned a plurality of determined circuit successively by aforementioned selection portion in the aforementioned test circuit of aforementioned comparator device;

In the output mensuration stage, the aforementioned determined circuit of selecting in its aforementioned test circuit according to aforementioned comparator device is measured the aforementioned determined transistorized electrical characteristics that each aforementioned determined circuit has to the aforementioned output signal of aforementioned output signal line output.

8. management method according to claim 7 is characterized in that each aforementioned determined circuit comprises:

Grid voltage control part, the grid voltage of its appointment add to aforementioned determined transistorized gate terminal outward;

The reference voltage input part, its reference voltage from the outside input offers the reference voltage side terminal of the side aforementioned determined transistor drain terminal and the source terminal;

The terminal voltage efferent, it is exported the terminal voltage of the terminal beyond the aforementioned reference voltage side terminal in aforementioned determined transistor drain terminal and the source terminal to be condition from outside input select signal as aforementioned output signal;

Aforementioned selection portion comprises:

The row selection portion, it exports aforementioned selection signal with the capable corresponding aforementioned determined circuit of appointment in aforementioned a plurality of determined circuit that two-dimensional matrix shape is arranged;

Column selection portion, it selects the terminal voltage of the aforementioned determined circuit corresponding with the row of appointment from the aforementioned determined circuit of importing aforementioned selection signal, make it to aforementioned output signal line output;

Aforementioned test circuit also comprises:

A plurality of current sources, itself and the corresponding setting of each row of aforementioned a plurality of determined circuit make electric current between the source drain of appointment import in the aforementioned determined circuit of aforementioned selection signal mobile in aforementioned capable selection portion;

Aforementioned datum characteristic is obtained the stage and the aforementioned comparative characteristic mensuration stage is measured aforementioned terminal voltage as each aforementioned determined transistorized aforementioned electric characteristic.

9. management method according to claim 8, it is characterized in that: aforementioned datum characteristic obtains the stage and aforementioned comparative characteristic is measured the stage, at each aforementioned determined transistor, according to aforementioned reference voltage and aforementioned terminal voltage, this determined transistorized threshold voltage is measured as the aforementioned electric characteristic.

10. management method according to claim 9, it is characterized in that: the error of the aforementioned a plurality of determined transistorized threshold voltages that contain in the error of the aforementioned a plurality of determined transistorized threshold voltages that contain in the afore-mentioned characteristics comparison phase comparison of aforementioned benchmark device and the aforementioned comparator device.

11. management method according to claim 7 is characterized in that each aforementioned determined circuit comprises:

Voltage adds portion, and it gives aforementioned determined transistorized source terminal and drain terminal impressed voltage, the Control of Voltage that adds on this determined transistorized gate insulating film for roughly certain;

Capacitor, it stores the grid leakage current that flows to aforementioned source terminal and aforementioned drain terminal from aforementioned determined transistorized aforementioned gate terminal;

The condenser voltage efferent, it is exported the condenser voltage of the end of aforementioned source terminal in the aforementioned capacitor and aforementioned drain terminal side to be condition from outside input select signal as aforementioned output signal;

Aforementioned datum characteristic is obtained the stage and the aforementioned comparative characteristic mensuration stage is measured aforementioned capacitor voltage as each aforementioned determined transistorized electrical characteristics.

12. a management devices is at the line of managing production by the quilt of multiple tracks production process production electron device, manages the management devices of each process units that uses in each road production process, it is characterized in that having:

The datum characteristic determination part, it measures benchmark Devices Characteristics, and this benchmark device is by implementing aforementioned multiple tracks production process, and predetermined benchmark production line produces;

The comparator device production controlling part, it makes is aforementionedly handled at least one production process in the aforementioned multiple tracks production process by the line of managing production, and makes aforementioned benchmark production line handle other production process, the production comparator device;

The comparative characteristic determination part, it measures the characteristic of aforementioned comparator device;

The characteristic comparing section, the characteristic of its comparison of aforementioned benchmark Devices Characteristics and aforementioned comparator device;

Detection unit, it judges according to afore-mentioned characteristics difference whether the aforementioned process units that is used for aforementioned at least one production process is good.

13. a device manufacturing method is characterized in that: it uses by the aforementioned line of being managed production of the described management method management of claim 1 and produces electron device.

14. a management method is that the management method of managing each process units that uses in each road production process is characterized in that having at the line of managing production by the quilt of multiple tracks production process production electron device:

Preparatory stage, it prepares the 1st device and the 2nd device with same production line production;

The 1st plasma illumination stage, it is by implementing aforementioned multiple tracks production process, and the plasma irradiation unit that uses in the predetermined benchmark production line is given aforementioned the 1st device irradiation plasma;

The 2nd plasma illumination stage, it gives aforementioned the 2nd device irradiation plasma by the aforementioned plasma irradiation unit that is used in the line of managing production;

In the characteristic measurement stage, it is measured respectively and shone aforementioned isoionic aforementioned the 1st device and aforementioned the 2nd Devices Characteristics;

The characteristic comparison phase, its comparison of aforementioned the 1st Devices Characteristics and aforementioned the 2nd Devices Characteristics;

Decision stage, whether it judges aforementioned good by the aforementioned plasma irradiation unit in the line of managing production according to the difference of afore-mentioned characteristics.