CN101272106A - High-frequency pure sine wave inverter - Google Patents
High-frequency pure sine wave inverter Download PDFInfo
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- CN101272106A CN101272106A CNA2008100615301A CN200810061530A CN101272106A CN 101272106 A CN101272106 A CN 101272106A CN A2008100615301 A CNA2008100615301 A CN A2008100615301A CN 200810061530 A CN200810061530 A CN 200810061530A CN 101272106 A CN101272106 A CN 101272106A
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Abstract
The invention relates to a high frequency pure sine wave inverter. A DC voltage booster circuit is connected with a high voltage rectification circuit; the high voltage rectification circuit is connected with an H-bridge circuit; a current sampling circuit is connected and arranged between the high voltage rectification circuit and the H-bridge circuit; the current sampling circuit is connected with a voltage control/protection circuit; the H-bridge circuit is connected with a filter circuit; the filter circuit is output alternating current and is connected with a voltage sampling circuit; the voltage sampling circuit is connected with the voltage control/protection circuit; a 50Hz high frequency modulating output voltage control circuit is connected and arranged between the voltage sampling circuit and the voltage control/protection circuit; the output ends of the voltage control/protection circuits are respectively connected with the DC voltage booster circuit and the 50Hz high frequency modulating output voltage control circuit; the output end of the 50Hz high frequency modulating output voltage control circuit is connected with a drive circuit; the drive circuit is connected with the H-bridge circuit; the inverter of the invention has the advantages of small size, light weight and low cost; the inverter outputs pure sine waves and can be used for all the loads the powers of which are less than that of the inverter.
Description
Technical field
The present invention relates to a kind of inverter, refer in particular to a kind of high-frequency pure sine wave inverter.
Technical background
Direct current becomes the inverter that exchanges and waits until extensive use in a lot of fields, does not more especially have the occasion of AC power, all must high-quality AC power such as health mobile unit, environmental protection measurement vehicle device etc.And present commercially available inverter, output all be amplitude and width square wave or analog sine with load variations, what have also can sine wave output, but wave distortion is big, higher harmonic components is big, volume is big, Heavy Weight, improper mobile use.
Summary of the invention
The object of the present invention is to provide a kind of high-frequency pure sine wave inverter, its volume is little, in light weight, cost is low, output be pure sine wave, can be used in all little loads of power ratio inverter.
For achieving the above object, the solution that the present invention takes is: a kind of high-frequency pure sine wave inverter, it comprises DC voltage booster circuit, high-voltage rectifier, 50Hz high frequency modulated output voltage controlling circuit, filter circuit, voltage control/protective circuit, DC voltage booster circuit connects high-voltage rectifier, high-voltage rectifier connects the H bridge circuit, be connected current sampling circuit between high-voltage rectifier and the H bridge circuit, current sampling circuit connects voltage control/protective circuit, the H bridge circuit connects filter circuit, filter circuit exchanges output and connects voltage sample circuit, voltage sample circuit connects voltage control/protective circuit, be connected 50Hz high frequency modulated output voltage controlling circuit between voltage sample circuit and the voltage control/protective circuit, voltage control/protective circuit output connects DC voltage booster circuit and 50Hz high frequency modulated output voltage controlling circuit respectively, 50Hz high frequency modulated output voltage controlling circuit output connects drive circuit, and drive circuit connects the H bridge circuit; DC voltage booster circuit is by chip IC 1; two metal-oxide-semiconductors; triode; diode; high frequency transformer; the light idol; resistance; electric capacity is formed; 11 pin of chip IC 1 and two metal-oxide-semiconductor conductings of 13 pin output push pull mode pulse control; light idol feedback booster voltage; control chip IC1 output pulse width; reliable control booster voltage; high-voltage rectifier is formed full-bridge filtering by four diodes and electrochemical capacitor; 50Hz high frequency modulated output voltage controlling circuit is by chip IC 3; IC4; IC5; resistance; electric capacity is formed; 7 pin of chip IC 5 and the output of 11 pin are by the high-frequency pulse signal of sinusoidal manner modulation; through chip IC 3; the H bridge circuit that control is made up of four metal-oxide-semiconductors behind the IC4 voltage transformation; process is by inductance; the filtering of the filter circuit that electric capacity and resistance are formed; pure sine wave alternating current from electric capacity two ends outputting high quality; resistance and electric capacity filtering high order harmonic component make the out-put supply better quality; voltage control/protective circuit is by chip IC 1; IC2; the light idol; resistance; electric capacity is formed; the 17 pin input direct-current working volts of chip IC 1; judge whether overvoltage and under-voltage; chip IC 2; resistance; electric capacity is formed the overload protection control circuit; send overload signal by chip IC 2; one the tunnel quits work through light idol control chip IC1; another road is by behind the electric resistance partial pressure; control chip IC5 stops to send high-frequency modulation signal; 1 pin input ac voltage amplitude of chip IC 5; after chip IC 5 inter-process, automatically voltage is stabilized in setting range.
The present invention is used widely in a lot of fields, does not more especially have the occasion of AC power, and when necessarily requiring high-quality AC power, the importance of the pure sine wave inverter that more seems.High-frequency pure sine wave has overcome the defective that prior art exists fully, and its volume is little, and is in light weight, and output is pure sine wave, can be used in all little loads of power ratio inverter.High-frequency pure sine wave inverter comprises 5 chips, electric capacity, resistance, metal-oxide-semiconductor, high frequency transformer.The control of boosting of one of them chip high frequency is connected with metal-oxide-semiconductor, high frequency transformer, a chip 50HZ high frequency modulated pulse output, and a chip protection control, two chip for driving connect with the H bridging of metal-oxide-semiconductor composition.50HZ high frequency modulated chip has software control, changes by sinusoidal rule and exports modulating pulse successively, exports pure sine wave behind inductance and capacitor filtering.The present invention has following advantage: (1) is output as pure sine wave and is used in power all loads less than inverter.(2) significantly reduced the inverter volume and weight, high-quality portable power source can be provided.(3) efficient height, cost are low, easy to use.
Description of drawings
Fig. 1 is the structured flowchart of present embodiment.
Fig. 2 is the circuit theory diagrams of present embodiment.
Embodiment
The invention will be further described below in conjunction with drawings and Examples.
Referring to Fig. 1 and Fig. 2, a kind of high-frequency pure sine wave inverter, it comprises DC voltage booster circuit, high-voltage rectifier, 50Hz high frequency modulated output voltage controlling circuit, filter circuit, voltage control/protective circuit, DC voltage booster circuit connects high-voltage rectifier, high-voltage rectifier connects the H bridge circuit, be connected current sampling circuit between high-voltage rectifier and the H bridge circuit, current sampling circuit connects voltage control/protective circuit, the H bridge circuit connects filter circuit, filter circuit exchanges output and connects voltage sample circuit, voltage sample circuit connects voltage control/protective circuit, be connected 50Hz high frequency modulated output voltage controlling circuit between voltage sample circuit and the voltage control/protective circuit, voltage control/protective circuit output connects DC voltage booster circuit and 50Hz high frequency modulated output voltage controlling circuit respectively, 50Hz high frequency modulated output voltage controlling circuit output connects drive circuit, and drive circuit connects the H bridge circuit; DC voltage booster circuit is by chip IC 1; two metal-oxide-semiconductor V1; V2; triode T1-T5; diode D1; D12; D13; high frequency transformer B1; light idol PC1; resistance R 3-R12; capacitor C 4 is formed; 11 pin of chip IC 1 and two metal-oxide-semiconductor V1 of 13 pin output push pull mode pulse control; the V2 conducting; light idol PC1 feedback booster voltage; control chip IC1 output pulse width; reliable control booster voltage; high-voltage rectifier is formed full-bridge filtering by four diode D7-D10 and electrochemical capacitor C14; 50Hz high frequency modulated output voltage controlling circuit is by chip IC 3; IC4; IC5; resistance R 28-R30; capacitor C D10; CD11 forms; 7 pin of chip IC 5 and the output of 11 pin are by the high-frequency pulse signal of sinusoidal manner modulation; through chip IC 3; control is by four metal-oxide-semiconductor V3 behind the IC4 voltage transformation; V4; V5; the H bridge circuit that V6 forms; process is by inductance L 1; capacitor C 17; the filtering of the filter circuit that C18 and resistance R 34 are formed; pure sine wave alternating current from capacitor C 18 two ends outputting high qualities; resistance R 34 and capacitor C 17 filtering high order harmonic components make the out-put supply better quality; voltage control/protective circuit is by light idol PC1; PC2; resistance R 13-R15; capacitor C 5; C6 and voltage stabilizing didoe DW1; DW2 forms; the 17 pin input direct-current working volts of chip IC 1; judge whether overvoltage and under-voltage; chip IC 2; resistance R 20; capacitor C 9 is formed the overload protection control circuit; send overload signal by chip IC 2; one the tunnel quits work through light idol PC2 control chip IC1; another road is by resistance R 36; after the R19 dividing potential drop; control chip IC5 stops to send high-frequency modulation signal; 1 pin input ac voltage amplitude of chip IC 5; after chip IC 5 inter-process, automatically voltage is stabilized in setting range.
Referring to Fig. 2, described chip IC 1 model is PIC16F716, and 1 pin of chip IC 1 connects resistance R 38, and resistance R 38 connects indicator light LED2; 4 pin of chip IC 1 connect capacitor C 4, resistance R 3 and diode D1; 5 pin ground connection of chip IC 1; 6 pin connecting resistance R4 of chip IC 1 and light idol PC2; 7 pin connecting resistance R5 of chip IC 1 and light idol PC1; 8 pin connecting resistance R6 of chip IC 1, resistance R 6 connects triode T1 base stage, and triode T1 collector electrode meets buzzer HA; 10 pin connecting resistance R37 of chip IC 1, resistance R 37 meets indicator light LED1; 11 pin connecting resistance R7 of chip IC 1, resistance R 7 connects triode T2 base stage, triode T2 collector connecting transistor T3 base stage, resistance R 10, diode D13, driven MOS pipe V2; 13 pin connecting resistance R8 of chip IC 1, resistance R 8 connects triode T4 base stage, triode T4 collector connecting transistor T5 base stage, resistance R 9, diode D12, driven MOS pipe V1; Metal-oxide-semiconductor V1, V2 connect high frequency transformer B1; 14 pin of chip IC 1 connect the 5VDC power supply; 15,16 pin of chip IC 1 connect by crystalline substance and swing the oscillating circuit that Z1 and capacitor C 3, C2 form; 17 pin connecting resistance R2, R3 and the capacitor C 1 of chip IC 1.
Referring to Fig. 2, described chip IC 5 models are PIC16F716, and chip IC 3, IC4 model are IR2103, and 1 pin of chip IC 5 connects the voltage sample circuit of being made up of resistance R 21, R22, R23, potentiometer RW1 and capacitor C 12; 2 pin of chip IC 5 connect the 5VDC power supply; 4 pin of chip IC 5 connect the reset circuit of being made up of resistance R 20, capacitor C 9, diode D2; 5 pin ground connection of chip IC 5; 7 pin of chip IC 5 connect 2 pin and 3 pin of chip IC 4; 11 pin of chip IC 5 connect 2 pin and 3 pin of chip IC 3; 14 pin of chip IC 5 connect the 5VDC power supply; 15,16 pin of chip IC 5 connect by crystalline substance and swing the oscillating circuit that Z2, capacitor C 10, C11 form; 1 pin of chip IC 3 and 1 pin of chip IC 4 connect the 15V power supply; 4 pin of chip IC 3 and 4 pin of chip IC 4 connect the negative pole behind the high-voltage rectifying; 5 pin of 5 pin of chip IC 3,7 pin and chip IC 4,7 pin connecting resistance R29, R28, R31, R30 respectively drive the H bridge circuit; 8 pin of chip IC 3 connect the bootstrap circuit boost of being made up of capacitor C D10 and diode D3; 8 pin of chip IC 4 connect the bootstrap circuit boost of being made up of capacitor C D11 and diode D4.
Referring to Fig. 2, described light idol PC1, PC2 model are PC817.
Referring to Fig. 2, described chip IC 2 models are LM339.
Claims (5)
1, a kind of high-frequency pure sine wave inverter, it comprises DC voltage booster circuit, high-voltage rectifier, 50Hz high frequency modulated output voltage controlling circuit, filter circuit, voltage control/protective circuit, it is characterized in that: DC voltage booster circuit connects high-voltage rectifier, high-voltage rectifier connects the H bridge circuit, be connected current sampling circuit between high-voltage rectifier and the H bridge circuit, current sampling circuit connects voltage control/protective circuit, the H bridge circuit connects filter circuit, filter circuit exchanges output and connects voltage sample circuit, voltage sample circuit connects voltage control/protective circuit, be connected 50Hz high frequency modulated output voltage controlling circuit between voltage sample circuit and the voltage control/protective circuit, voltage control/protective circuit output connects DC voltage booster circuit and 50Hz high frequency modulated output voltage controlling circuit respectively, 50Hz high frequency modulated output voltage controlling circuit output connects drive circuit, and drive circuit connects the H bridge circuit; DC voltage booster circuit is by chip (IC1); two metal-oxide-semiconductor (V1; V2); triode (T1-T5); diode (D1; D12; D13); high frequency transformer (B1); light idol (PC1); resistance (R3-R12); electric capacity (C4) is formed; 11 pin of chip (IC1) and two metal-oxide-semiconductor (V1 of 13 pin output push pull mode pulse control; V2) conducting; light idol (PC1) feedback booster voltage; control chip (IC1) output pulse width; reliable control booster voltage; high-voltage rectifier is formed full-bridge filtering by four diodes (D7-D10) and electrochemical capacitor (C14); 50Hz high frequency modulated output voltage controlling circuit is by chip (IC3; IC4; IC5); resistance (R28-R30); electric capacity (CD10; CD11) form; 7 pin of chip (IC5) and the output of 11 pin are by the high-frequency pulse signal of sinusoidal manner modulation; through chip (IC3; IC4) control behind the voltage transformation by four metal-oxide-semiconductor (V3; V4; V5; V6) the H bridge circuit of Zu Chenging; process is by inductance (L1); electric capacity (C17; C18) and the filtering of the filter circuit formed of resistance (R34); pure sine wave alternating current from electric capacity (C18) two ends outputting high quality; resistance (R34) and electric capacity (C17) filtering high order harmonic component make the out-put supply better quality; voltage control/protective circuit is by light idol (PC1; PC2); resistance (R13-R15); electric capacity (C5; C6) and voltage stabilizing didoe (DW1; DW2) form; the 17 pin input direct-current working volts of chip (IC1); judge whether overvoltage and under-voltage; chip (IC2); resistance (R20); electric capacity (C9) is formed the overload protection control circuit; (IC2) sends overload signal by chip; one the tunnel quits work through light idol (PC2) control chip (IC1); another road is by resistance (R36; R19) after the dividing potential drop; control chip (IC5) stops to send high-frequency modulation signal; 1 pin input ac voltage amplitude of chip (IC5); after chip (IC5) inter-process, automatically voltage is stabilized in setting range.
2, a kind of high-frequency pure sine wave inverter according to claim 1 is characterized in that: described chip (IC1) model is PIC16F716, and 1 pin of chip (IC1) connects resistance (R38), and resistance (R38) connects indicator light (LED20; 4 pin of chip (IC1) connect electric capacity (C4), resistance (R3) and diode (D1); 5 pin ground connection of chip (IC1); 6 pin connecting resistances (R4) of chip (IC1) and light idol (PC2); 7 pin connecting resistances (R5) of chip (IC1) and light idol (PC1); 8 pin connecting resistances (R6) of chip (IC1), resistance (R6) connects triode (T1) base stage, and triode (T1) collector electrode connects buzzer (HA); 10 pin connecting resistances (R37) of chip (IC1), resistance (R37) connects indicator light (LED1); 11 pin connecting resistances (R7) of chip (IC1), resistance (R7) connects triode (T2) base stage, triode (T2) collector connecting transistor (T3) base stage, resistance (R10), diode (D13), driven MOS pipe (V2); 13 pin connecting resistances (R8) of chip (IC1), resistance (R8) connects triode (T4) base stage, triode (T4) collector connecting transistor (T5) base stage, resistance (R9), diode (D12), driven MOS pipe (V1); Metal-oxide-semiconductor (V1, V2) connects high frequency transformer (B1); 14 pin of chip (IC1) connect the 5VDC power supply; 15,16 pin of chip (IC1) connect by crystalline substance and swing the oscillating circuit that (Z1) and electric capacity (C3, C2) are formed; The 17 pin connecting resistances (R2, R3) and the electric capacity (C1) of chip (IC1).
3, a kind of high-frequency pure sine wave inverter according to claim 1, it is characterized in that: described chip (IC5) model is PIC16F716, chip (IC3, IC4) model is IR2103, and 1 pin of chip (IC5) connects by the resistance (voltage sample circuit that R21, R22, R230, potentiometer (RW1) and electric capacity (C12) are formed; (2 pin of IC50 connect the 5VDC power supply to chip; 4 pin of chip (IC5) connect the reset circuit of being made up of resistance (R20), electric capacity (C9), diode (D2); 5 pin ground connection of chip (IC5); 7 pin of chip (IC5) connect 2 pin and 3 pin of chip (IC4); 11 pin of chip (IC5) connect 2 pin and 3 pin of chip (IC3); 14 pin of chip (IC5) connect the 5VDC power supply; 15,16 pin of chip (IC5) connect by crystalline substance and swing the oscillating circuit that (Z2), electric capacity (C10, C11) are formed; 1 pin of 1 pin of chip (IC3) and chip (IC4) connects the 15V power supply; 4 pin of 4 pin of chip (IC3) and chip (IC4) connect the negative pole behind the high-voltage rectifying; 5 pin of 5 pin of chip (IC3), 7 pin and chip (IC4), 7 pin connecting resistance (R29, R28, R31, R30) respectively drive the H bridge circuit; 8 pin of chip (IC3) connect the bootstrap circuit boost of being made up of electric capacity (CD10) and diode (D3); 8 pin of chip (IC4) connect the bootstrap circuit boost of being made up of electric capacity (CD11) and diode (D4).
4, a kind of high-frequency pure sine wave inverter according to claim 1 is characterized in that: described light idol (PC1, PC2) model is PC817.
5, a kind of high-frequency pure sine wave inverter according to claim 1 is characterized in that: described chip (IC2) model is LM339.
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2008100615301A CN100561847C (en) | 2008-05-02 | 2008-05-02 | High-frequency pure sine wave inverter |
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2008100615301A CN100561847C (en) | 2008-05-02 | 2008-05-02 | High-frequency pure sine wave inverter |
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| CN101272106A true CN101272106A (en) | 2008-09-24 |
| CN100561847C CN100561847C (en) | 2009-11-18 |
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| CNB2008100615301A Expired - Fee Related CN100561847C (en) | 2008-05-02 | 2008-05-02 | High-frequency pure sine wave inverter |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102195509A (en) * | 2011-05-25 | 2011-09-21 | 深圳桑达国际电子器件有限公司 | Pure sine wave inverter H-bridge modulator circuit and method |
| CN103560676A (en) * | 2013-11-12 | 2014-02-05 | 乐清市日升电子有限公司 | Improved high-frequency sine wave inverter |
| CN105450207A (en) * | 2015-11-19 | 2016-03-30 | 中国航天时代电子公司 | Bootstrap driving circuit |
| CN104300825B (en) * | 2014-09-30 | 2017-02-08 | 杭州电子科技大学 | Sine wave inverter with switchable output voltages |
| CN109067221A (en) * | 2018-10-12 | 2018-12-21 | 中山市标致电子科技有限公司 | A kind of inverter circuit |
| CN110646018A (en) * | 2019-09-12 | 2020-01-03 | 东南大学 | High-frequency current source Wheatstone bridge detection circuit realized by low-speed operational amplifier |
| CN113572371A (en) * | 2021-08-12 | 2021-10-29 | 乐清市乐翔电气有限公司 | Pure sine wave AC constant voltage stable power supply |
| CN113687195A (en) * | 2021-08-13 | 2021-11-23 | 重庆大学 | Electrical equipment discharge fault simulation device and method |
-
2008
- 2008-05-02 CN CNB2008100615301A patent/CN100561847C/en not_active Expired - Fee Related
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102195509A (en) * | 2011-05-25 | 2011-09-21 | 深圳桑达国际电子器件有限公司 | Pure sine wave inverter H-bridge modulator circuit and method |
| CN103560676A (en) * | 2013-11-12 | 2014-02-05 | 乐清市日升电子有限公司 | Improved high-frequency sine wave inverter |
| CN104300825B (en) * | 2014-09-30 | 2017-02-08 | 杭州电子科技大学 | Sine wave inverter with switchable output voltages |
| CN105450207A (en) * | 2015-11-19 | 2016-03-30 | 中国航天时代电子公司 | Bootstrap driving circuit |
| CN105450207B (en) * | 2015-11-19 | 2018-08-31 | 中国航天时代电子公司 | A kind of Bootstrapping drive circuit |
| CN109067221B (en) * | 2018-10-12 | 2020-10-30 | 中山市标致电子科技有限公司 | Inverter circuit and inverter |
| CN109067221A (en) * | 2018-10-12 | 2018-12-21 | 中山市标致电子科技有限公司 | A kind of inverter circuit |
| CN110646018A (en) * | 2019-09-12 | 2020-01-03 | 东南大学 | High-frequency current source Wheatstone bridge detection circuit realized by low-speed operational amplifier |
| CN110646018B (en) * | 2019-09-12 | 2021-10-19 | 东南大学 | High-frequency current source Wheatstone bridge detection circuit realized by low-speed operational amplifier |
| CN113572371A (en) * | 2021-08-12 | 2021-10-29 | 乐清市乐翔电气有限公司 | Pure sine wave AC constant voltage stable power supply |
| CN113572371B (en) * | 2021-08-12 | 2022-11-15 | 乐清市乐翔电气有限公司 | Pure sine wave AC constant voltage stable power supply |
| CN113687195A (en) * | 2021-08-13 | 2021-11-23 | 重庆大学 | Electrical equipment discharge fault simulation device and method |
| CN113687195B (en) * | 2021-08-13 | 2024-05-03 | 重庆大学 | Electrical equipment discharge fault simulation device and method |
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| CN100561847C (en) | 2009-11-18 |
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