CN101271946A - LED module - Google Patents
LED module Download PDFInfo
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- CN101271946A CN101271946A CNA2007100918225A CN200710091822A CN101271946A CN 101271946 A CN101271946 A CN 101271946A CN A2007100918225 A CNA2007100918225 A CN A2007100918225A CN 200710091822 A CN200710091822 A CN 200710091822A CN 101271946 A CN101271946 A CN 101271946A
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- refractive index
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- emitting diode
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Abstract
An LED module consists of an encapsulation seat, a luminescent chip, a multi-layer optical film layer and a lens, wherein the luminescent chip is arranged at the encapsulation seat; the multi-layer optical film layer is covered on the luminescent chip; the lens is covered on the multi-layer optical film layer. The multi-layer optical film layer is provided with dissimilar index of refractions that are smaller than the index of refraction of the luminescent chip. The index of refraction of the lens is larger than 1 and smaller than the index of refraction of the multi-layer optical film layer.
Description
Technical field
The invention provides a kind of light-emitting diode (LED) module and forming method thereof, refer to a kind of light-emitting diode (LED) module and forming method thereof especially with light extraction yield highly.
Background technology
In recent years, because Display Technique is constantly flourish, the display unit of various display unit such as LCD, mobile phone, personal digital assistant and other sizes is dependent on the application of light-emitting diode invariably.Light-emitting diode is a kind of semiconductor element, can be provided long useful life, power consumption is low, reaction speed is fast and its material converts the efficient height of light to by electricity, add its volume little, be fit to volume production, generally be used on various data, communication and the consumption electronic products.
Please refer to Fig. 1.Fig. 1 is the schematic diagram of the light-emitting diode (LED) module 10 of prior art.Light-emitting diode (LED) module 10 comprises enclosed seat 12, luminescence chip 14, colloid 16, two metal pins 19 and lens 18.Metal pin 19 is formed on the luminescence chip 14, and is electrically connected at tellite (not shown in Fig. 1).Luminescence chip 14 is disposed on the enclosed seat 12, and comprises chip body 13, and colloid 16 is covered on the luminescence chip 14, and colloid 16 usefulness are helped luminescence chip 14 heat radiations, pulls metal pin 19 and causes metal pin 19 broken strings to prevent improper thermal stress.And lens 18 are covered on the colloid 16.The light self-luminous chip 14 of light-emitting diode (LED) module 10 sends, and sees through chip body 13 ejaculations and reaches colloid 16, penetrates lens 18 again light is passed to the outside.Because the refractive index of the chip body 13 of luminescence chip 14 generally is about 2.8-3.4, extraneous air refractive index 1 than light-emitting diode (LED) module 10 is high, so that a lot of light on interface total reflection take place and can't effectively penetrate colloid 16 and lens 18 by luminescence chip 14, reduced the light extraction yield of light-emitting diode (LED) module 10.
Please refer to Fig. 2.Fig. 2 is entered the opticpath schematic diagram of the less medium of refractive index by the big medium of refractive index for light.Light L enters medium 24 by medium 22, and the refractive index of its medium 22 is N0, and the refractive index of medium 24 is N1 ', and refractive index N0 is greater than refractive index N1 '.As incidence angle θ during greater than critical angle θ c, light L can not enter into medium 24, and with angle of reflection θ reflected back into medium 22.Have only incidence angle θ could penetrate into medium 24 smoothly less than the light of critical angle θ c.Can learn the relation at refractive index and refraction angle by following formula:
N0×sinθ0＝N1’×sinθ1’
Heal when big when the ratio of N0 and N1 ', the critical angle θ c that total reflection can take place is littler, causes most light to enter into medium 24 smoothly by medium 22.
Comprehensively above-mentioned, because colloid 16 its refractive indexes of the light-emitting diode (LED) module 10 that uses are between 1.9-2.2 at present, with the refractive index of the chip body 13 of luminescence chip 14 evident difference is arranged, cause critical angle θ c too small, a lot of light can't effectively penetrate, not only the light extraction yield is bad, and makes the light that can't penetrate convert heat to, further shortens the life-span of light-emitting diode (LED) module 10.
Summary of the invention
The invention provides a kind of highly light-emitting diode (LED) module of light extraction yield that has, comprise enclosed seat; Luminescence chip is disposed on this enclosed seat; The multilayer optical rete is covered on this luminescence chip; And lens, cover on this multilayer optical rete.This multilayer optical rete has different refractive index, and the refractive index of this multilayer optical rete is all less than the refractive index of this luminescence chip, wherein covers near the refractive index of the optical film of this luminescence chip greater than the refractive index that covers away from the optical film of this luminescence chip.The refractive index of these lens is greater than 1, and less than the refractive index of this multilayer optical rete.
The invention provides a kind of method that forms light-emitting diode (LED) module, comprise luminescence chip is disposed on the enclosed seat, the multilayer optical rete of refractive index less than the refractive index of this luminescence chip is covered on this luminescence chip, wherein this multilayer optical rete has different refractive index, and the lens of refractive index less than the refractive index of this multilayer optical rete are covered on this multilayer optical rete, the refractive index of these lens is greater than 1.
Description of drawings
Fig. 1 is the schematic diagram of the light-emitting diode (LED) module of prior art.
Fig. 2 is entered the opticpath schematic diagram of the less medium of refractive index by the big medium of refractive index for light.
Fig. 3 is the highly schematic diagram of the light-emitting diode (LED) module of light extraction yield that has of the present invention.
Another has the highly schematic diagram of the light-emitting diode (LED) module of light extraction yield to Fig. 4 for the present invention.
Fig. 5 enters the not only opticpath schematic diagram of the less medium of refractive index of one deck for light by the big medium of refractive index.
Description of reference numerals
10,30,40 light-emitting diode (LED) modules, 12,32 enclosed seats
14,34 luminescence chips, 16 colloids
36a-36k, 39a-39k optical film
18,38 lens
19,39 metal pins
13,33 chip body L, L1 light
θ, θ a, θ b incidence angle θ c, θ c1 critical angle
22,24,42,44,46,48 media
θ 0, θ 1 ' angle
Embodiment
Please refer to Fig. 3.Fig. 3 is the highly schematic diagram of the light-emitting diode (LED) module 30 of light extraction yield that has of the present invention.Light-emitting diode (LED) module 30 comprises enclosed seat 32, luminescence chip 34, multilayer optical rete 36a-36k, two metal pins 39 and lens 38.The metal pin is formed on the luminescence chip 34, and is electrically connected at substrate, for example is tellite.Luminescence chip 34 is disposed on the enclosed seat 32, and comprises the chip body 33 with first refractive index N1.Multilayer optical rete 36a-36k is covered on the luminescence chip 34, and the refractive index of multilayer optical rete 36a-36k is different, the optical film 36a that wherein covers near luminescence chip 34 has refractive index Na, the second layer glue-line 36b that covers near luminescence chip 34 has refractive index Nb, by that analogy, the optical film 36k that covers away from luminescence chip 34 has refractive index Nk.Wherein cover near the refractive index of the optical film of luminescence chip 34 greater than the refractive index that covers away from the optical film of luminescence chip 34, that is Na＞Nb＞...＞Nk.And lens 38 are covered on the optical film 36k, and have third reflect rate N3, and it is greater than 1.Wherein, lens 38 are transparent enclosure glue material, and it can comprise silicones (silicone).And the third reflect rate N3 of lens 38 is less than the refractive index Na-Nk of multilayer optical rete 36a-36k, and the refractive index Na-Nk of multilayer optical rete 36a-36k is less than the first refractive index N1 of the chip body 33 of luminescence chip, that is N1＞Na＞Nb＞...＞Nk＞N3＞1.
The light self-luminous chip 34 of light-emitting diode (LED) module 30 sends, and sees through chip body 33 and penetrates the optical film 36a-36k that penetrates from level to level, penetrates lens 38 again light is passed to the outside.Usually the refractive index of the chip body 33 of this luminescence chip is 2.8-3.4, and the refractive index of lens 38 is 1.5, and the refractive index of air is 1.And in a preferred embodiment, the refractive index of multilayer optical rete 36a-36k in layer is covered in multilayer optical rete 36a-36k on the luminescence chip 34 in the mode of evaporation or sputter between 2.8 to 1.5.Because the refractive index Na-Nk of multilayer optical rete 36a-36k is for successively decreasing one by one, to be unlikely to difference too big with being covered in refractive index Na near the optical film 36a of luminescence chip 34 to make the refractive index N1 of chip body 33 of luminescence chip 34, and refractive index Na and refractive index Nb also gap is little, in like manner, also little away from the gap of the refractive index N3 of the refractive index Nk of the optical film 36k of luminescence chip 34 and lens 38.Thus, light penetrates via the chip body 33 of luminescence chip 34, penetrates optical film 36a-36k in layer, penetrate lens 38 again light is passed to the outside, little with contiguous refractive index difference, the situation of total reflection is difficult for taking place, and most light can effectively penetrate.
Please refer to Fig. 4.Another has the highly schematic diagram of the light-emitting diode (LED) module 40 of light extraction yield to Fig. 4 for the present invention.The enclosed seat 32 that light-emitting diode (LED) module 40 is comprised, luminescence chip 34, multilayer optical rete 36a-36k, two metal pins 39, chip body 33, lens 38 and enclosed seat 32 shown in Figure 3, luminescence chip 34, multilayer optical rete 36a-36k, two metal pins 39, chip body 33, lens 38 are identical.Light-emitting diode (LED) module 40 comprises multilayer optical rete 39a-39k in addition, multilayer optical rete 39a-39k is covered on the lens 38, and the refractive index of multilayer optical rete 39a-39k is different, the optical film 39a that wherein covers near lens 38 has refractive index N3a, the second layer optical film 39b that covers near lens 38 has refractive index N3b, by that analogy, the optical film 39k that covers away from lens 38 has refractive index N3k.Wherein, cover near the refractive index of the optical film of lens 38 greater than the refractive index that covers away from the optical film of lens 38, that is N3a＞N3b＞...＞N3k, and refractive index N3a-N3K is all greater than 1.Wherein, lens are transparent enclosure glue material, and its material can comprise silicones (Silicone).Multilayer optical rete 36a-36k is the inside multi-layer film structure of light-emitting diode (LED) module 40, and multilayer optical rete 39a-39k is the outside multi-layer film structure of light-emitting diode (LED) module 40, and it comprises silicon dioxide (SiO
2, refractive index 1.46), magnesium fluoride (MgF
2, refractive index 1.38) etc.And refractive index Na-Nk less than multilayer optical rete 36a-36k, and the refractive index Na-Nk of multilayer optical rete 36a-36k is less than the first refractive index N1 of the chip body 33 of luminescence chip, that is N1＞Na＞Nb＞...＞Nk＞＞N3＞N3a＞N3b＞...＞N3k＞1.
The light self-luminous chip 34 of light-emitting diode (LED) module 40 sends, and sees through chip body 33 and penetrates the optical film 36a-36k that penetrates from level to level, passes lens 38 again, penetrates optical film 39a-39k from level to level again, and light is passed to the outside.Usually the refractive index of the chip body 33 of this luminescence chip is 2.8-3.4, and the refractive index of optical film 39a-39k is between 1.5 to 1, and the refractive index of air is 1.In a preferred embodiment, the refractive index of multilayer optical rete 36a-36k in layer is covered in multilayer optical rete 36a-36k on the luminescence chip 34 in the mode of evaporation or sputter between 2.8 to 1.5.Because the refractive index Na-Nk of multilayer optical rete 36a-36k is for successively decreasing one by one, to be unlikely to difference too big with covering refractive index Na near the optical film 36a of luminescence chip 34 to make the refractive index N1 of chip body 33 of luminescence chip 34, and refractive index Na and refractive index Nb also gap is little; In like manner, also the most little with the gap of the refractive index N3a of the optical film 39a of the most close lens 38 away from the refractive index Nk of the outermost layer first optical film 36k of luminescence chip 34, and the refractive index N3a-N3k of multilayer optical rete 39a-39k is also for successively decreasing one by one, and then also gap is little for the refractive index N3b of refractive index N3a and contiguous optical film 39b.Thus, light penetrates via the chip body 33 of luminescence chip 34, penetrate optical film 36a-36k in layer, pass lens 38 again, penetrate optical film 39a-39k from level to level again, light is passed to the outside, little with contiguous refractive index difference, the situation of total reflection is difficult for taking place, and most light can effectively penetrate.
Please refer to Fig. 5.Fig. 5 enters the not only opticpath schematic diagram of the less medium of refractive index of one deck for light by the big medium of refractive index.Light L1 in regular turn by medium 42 enter medium 44, again enter medium 46, enter medium 48 again.The refractive index of its medium 42 is N0, and the refractive index of medium 44 is Na, and the refractive index of medium 46 is Nb, and the refractive index of medium 48 is N1 ', and the size of each refractive index pass is N0＞Na＞Nb＞N1 '.When the incidence angle θ 0 of light L1 less than critical angle θ c1, can penetrate medium 42 and enter medium 44; Then, light L1 penetrates medium 44 and enters medium 46 with incidence angle θ a refraction; At last, light L1 penetrates medium 46 and enters medium 48 with incidence angle θ b refraction again.Apply mechanically the formula of using above, can learn the relation at refractive index and refraction angle:
N0×sinθ0＝N1’×sinθ1’
When the ratio of N0 and N1 ' more hour, the critical angle θ c1 that total reflection can take place is bigger, therefore most light can enter into contiguous medium smoothly.
Above-described embodiment only is used for illustrating the present invention, does not limit to category of the present invention.Wherein the optical film 36a-36k of dissimilar layer can be different composition, silicon monoxide (SiO, refractive index 1.9), the tantalum pentoxide (Ta of epoxy resin
2O
5, refractive index 2.2), titanium dioxide (TiO
2, refractive index 2.4), but be not limited to this, the material that also can select for use other refractive indexes to be fit to.Light penetrates via the chip body 33 of luminescence chip 34, penetrate optical film 36a-36k (refractive index difference is little each other) in layer, penetrate lens 38 (and optical film 39a-39k of outside multi-layer film structure) again light is passed to the outside, because of little with the refractive index difference of contiguous rete, the situation of total reflection is difficult for taking place, and most light can effectively penetrate.
As from the foregoing, the refractive index of the chip body 33 of luminescence chip 34 is with the refractive index Na difference near the optical film 36a of luminescence chip 34 is little, a lot of light can both effectively penetrate, in like manner, the refractive index N3 of lens 38 is with the refractive index N3a difference near the optical film 39a of lens 38 is also little, can improve the extraction yield of light, therefore light can not accumulate in the interior of light-emitting diode (LED) module 30,40 and converts heat energy to and cause light-emitting diode (LED) module 30,40 overheated, thereby can significantly improve the life-span of light-emitting diode (LED) module 30,40.
The above only is the preferred embodiments of the present invention, and all equivalent variations and modifications of doing according to claim of the present invention all should belong to covering scope of the present invention.
Claims (20)
1. light-emitting diode (LED) module includes:
Enclosed seat;
Luminescence chip is disposed on this enclosed seat;
The multilayer optical rete is covered on this luminescence chip, and this multilayer optical rete has different refractive index, and the refractive index of this multilayer optical rete is all less than the refractive index of this luminescence chip; And
Lens are covered on this multilayer optical rete, and the refractive index of these lens is greater than 1, and less than the refractive index of this multilayer optical rete.
2. light-emitting diode (LED) module as claimed in claim 1 wherein covers near the refractive index of the optical film of this luminescence chip greater than the refractive index that covers away from the optical film of this luminescence chip.
3. light-emitting diode (LED) module as claimed in claim 1, wherein this multilayer optical rete comprises epoxy resin.
4. light-emitting diode (LED) module as claimed in claim 1, wherein this multilayer optical rete comprises silicon monoxide.
5. light-emitting diode (LED) module as claimed in claim 1, wherein this multilayer optical rete comprises tantalum pentoxide.
6. light-emitting diode (LED) module as claimed in claim 1, wherein this multilayer optical rete comprises titanium dioxide.
7. light-emitting diode (LED) module as claimed in claim 1, wherein the refractive index of this multilayer optical rete is between 2.8 to 1.5.
8. light-emitting diode (LED) module as claimed in claim 1, wherein these lens are transparent enclosure glue material.
9. light-emitting diode (LED) module as claimed in claim 1, wherein this lens package contains silicones.
10. light-emitting diode (LED) module includes:
Enclosed seat;
Luminescence chip is disposed on this enclosed seat;
Inner multi-layer film structure is covered on this luminescence chip, and this inside multi-layer film structure comprises the multilayer optical rete with different refractive index, and the refractive index of this multilayer optical rete that should the inside multi-layer film structure is all less than the refractive index of this luminescence chip;
Lens, be covered in this inside multi-layer film structure on, the refractive index of these lens is greater than 1, and less than the refractive index of this inside multi-layer film structure; And
Outside multi-layer film structure is covered on these lens, and this outside multi-layer film structure comprises the multilayer optical rete with different refractive index, and the refractive index of this multilayer optical rete that should the outside multi-layer film structure is all greater than 1, and less than the refractive index of these lens.
11. light-emitting diode (LED) module as claimed in claim 10 wherein covers near the refractive index of the optical film of this inside multi-layer film structure of this luminescence chip greater than the refractive index that covers away from the optical film of this inside multi-layer film structure of this luminescence chip.
12. light-emitting diode (LED) module as claimed in claim 10, this multilayer optical rete that wherein should the inside multi-layer film structure comprises epoxy resin.
13. light-emitting diode (LED) module as claimed in claim 10, this multilayer optical rete that wherein should the inside multi-layer film structure comprises silicon monoxide.
14. light-emitting diode (LED) module as claimed in claim 10, this multilayer optical rete that wherein should the inside multi-layer film structure comprises tantalum pentoxide.
15. light-emitting diode (LED) module as claimed in claim 10, this multilayer optical rete that wherein should the inside multi-layer film structure comprises titanium dioxide.
16. light-emitting diode (LED) module as claimed in claim 10, the refractive index of this multilayer optical rete that wherein should the inside multi-layer film structure is between 2.8 to 1.5.
17. light-emitting diode (LED) module as claimed in claim 10, wherein these lens are transparent enclosure glue material.
18. light-emitting diode (LED) module as claimed in claim 10, wherein this lens package contains silicones.
19. light-emitting diode (LED) module as claimed in claim 10, this multilayer optical rete that wherein should the outside multi-layer film structure comprises silicon dioxide or magnesium fluoride.
20. light-emitting diode (LED) module as claimed in claim 10, the refractive index of this multilayer optical rete that wherein should the outside multi-layer film structure is between 1.5 to 1.0.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100918225A CN101271946A (en) | 2007-03-23 | 2007-03-23 | LED module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100918225A CN101271946A (en) | 2007-03-23 | 2007-03-23 | LED module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101271946A true CN101271946A (en) | 2008-09-24 |
Family
ID=40005738
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2007100918225A Pending CN101271946A (en) | 2007-03-23 | 2007-03-23 | LED module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101271946A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104795430A (en) * | 2015-04-14 | 2015-07-22 | 京东方科技集团股份有限公司 | Organic light emitting display device and manufacturing method thereof |
| CN109920936A (en) * | 2019-03-19 | 2019-06-21 | 合肥鑫晟光电科技有限公司 | A kind of display panel, its production method and display device |
-
2007
- 2007-03-23 CN CNA2007100918225A patent/CN101271946A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104795430A (en) * | 2015-04-14 | 2015-07-22 | 京东方科技集团股份有限公司 | Organic light emitting display device and manufacturing method thereof |
| US9905808B2 (en) | 2015-04-14 | 2018-02-27 | Boe Technology Group Co., Ltd. | Organic light-emitting diode display device and its manufacturing method |
| CN109920936A (en) * | 2019-03-19 | 2019-06-21 | 合肥鑫晟光电科技有限公司 | A kind of display panel, its production method and display device |
| WO2020186898A1 (en) * | 2019-03-19 | 2020-09-24 | Boe Technology Group Co., Ltd. | Display panel, display apparatus, and methods for making the same |
| CN109920936B (en) * | 2019-03-19 | 2020-11-24 | 合肥鑫晟光电科技有限公司 | Display panel, manufacturing method thereof and display device |
| US11387425B2 (en) | 2019-03-19 | 2022-07-12 | Hefei Xinsheng Optoelectronics Technology Co., Ltd. | Display panel, display apparatus, and methods for making the same |
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Open date: 20080924 |