CN101267089B - A vertical cavity side transmission photon crystal surface wave laser and its design method - Google Patents
A vertical cavity side transmission photon crystal surface wave laser and its design method Download PDFInfo
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- CN101267089B CN101267089B CN2007100379893A CN200710037989A CN101267089B CN 101267089 B CN101267089 B CN 101267089B CN 2007100379893 A CN2007100379893 A CN 2007100379893A CN 200710037989 A CN200710037989 A CN 200710037989A CN 101267089 B CN101267089 B CN 101267089B
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Abstract
The present invention provides a vertical cavity surface emitting photonic crystal surface wave laser and its design method, the design method includes following steps: step 1: choosing a luminescent material, determining the material refractive index, selecting structure model of the photonic crystal, determining the structure parameter; step 2. calculating the dispersion relation of the structure by the super cell technology and the plane wave expansion method, obtaining a surface model; step 3. planning a surface wave micro-cavity body, the surface layer of the cavity body has periodic undulation. The invention properly changes the surface layer structure of the photonic crystal, the surface layer or the adjacent layer of the surface layer has periodic undulation, so as to improve the emitting direction of the surface wave laser, changing to a vertical cavity surface emission from the original end emission, and the constant phase surface of the emission is very flat. The design of the invention has simple thinking, better integrity, widely applying range, designing the surface wave laser of different wave bands according to the luminescent characteristic of the different materials, especially designing light source device of the light communication wave band using semiconductor material having important value.
Description
Technical field
The invention provides a kind of vertical cavity side transmission photon crystal surface wave laser and method for designing thereof, belong to technical fields such as photoelectron, optical communication.
Background technology
Photonic crystal is the dielectric material that refractive index changes in space periodicity, and it can control the dissemination of photon effectively.From E.Yablonovitch and S.John proposed this notion before 20 years since, people just gave extensive concern to the application of photonic crystal.Particularly in the optical communication technique field, photon crystal devices such as photonic crystal fiber, micro-resonant cavity laser, filter, integrated optical circuit have wide application prospect.Improving constantly of semi-conducting material Micrometer-Nanometer Processing Technology promoted two dimension even three-D photon crystal device application paces in practice widely.Photon crystal laser is a light source device important in the optical communication, people have designed a lot of dissimilar photon crystal lasers at present, mainly comprise vertical cavity surface type laser (VCSEL), point defect type laser, linear defect wave-guide type laser, ring laser, surface wave micro-cavity laser etc.
The surface wave micro-cavity laser is a kind of novel laser, on the photonic crystal that blocks (semo-infinite is big) surface, i.e. and the interface place of photonic crystal and air, therefore the mode of electromagnetic wave that existence can only be propagated along photon crystal surface be called the photon crystal surface ripple.It is because the band gap effect of photonic crystal and the total internal reflection double factor of photonic crystal and air interface cause.This photon crystal surface structure with surface modes can be used for design surface ripple micro-cavity laser, and its feature is that this microcavity is to begin to speak on the one hand, and it has very high quality factor (Q) equally on the other hand.
Existing document discloses a kind of photonic crystal thin plate limit mode laser, also is the photon crystal surface wave laser.It utilizes the photonic crystal thin plate to block surface wave on the section as the mode of operation of laser, and the part that two ends are not blocked is used as terminal reflector.Neighbour's layer of the superficial layer of this micro-cavity structure or superficial layer is not periodic to rise and fall, and promptly neighbour's layer of superficial layer or superficial layer is not modulated, and laser is Es-region propagations surfacewise only still, and from the two ends outgoing.
Existing document also discloses a kind of 2 D photon crystal sheet-type surface wave microcavity, belong to a kind of photon crystal surface wave laser with above-mentioned photonic crystal thin plate limit mode laser, this laser focuses on some character that change microcavity, such as chamber modulus and the long relation of quality factor and chamber, do not change neighbour's layer structure of the structure in chamber, particularly superficial layer or superficial layer.
Existing disclosed photon crystal surface wave laser all is end emission type lasers, and institute's emitted laser is Es-region propagations surfacewise only all, and from the two ends outgoing, not vertical cavity surface emitted laser device.
The surface wave laser of prior art all belongs to the end emission type, because diffraction, outgoing laser beam has the bigger angle of divergence, so directivity is poor, and the equiphase surface unevenness.
Summary of the invention
Technical problem to be solved by this invention provides a kind of vertical cavity side transmission photon crystal surface wave laser and method for designing thereof, but this laser vertical cavity surface emission, and have good unimodality, the wave surface of emergent light is very smooth.
In order to solve the problems of the technologies described above, the present invention has adopted following technological means:
A kind of method for designing of vertical cavity side transmission photon crystal surface wave laser at first is provided, comprises the steps:
The surface layer structure of negative area makes this superficial layer have surface modes in the middle of step 32, the change;
Step 33, the superficial layer of centre part or the nearest adjacent bed of superficial layer are carried out periodic modulation, be the lattice period of twice modulation period, makes the nearest adjacent bed of this superficial layer or superficial layer have periodic undulation.
Further, also comprise:
Simultaneously, the present invention also provides a kind of vertical cavity side transmission photon crystal surface wave laser, and its method for designing is as follows: step 1, selected luminescent material, determine the material refractive index, and select the photon crystal structure type, determine structural parameters; Step 2, utilize super primitive unit cell technology and plane wave expansion method to calculate the dispersion relation of this structure, obtain surface modes, calculate lattice period that should surface modes; This vertical cavity side transmission photon crystal surface wave laser comprises the cavity with superficial layer, and this method for designing also comprises step 3, excavates a part downwards from the centre in a side of photonic crystal, and the part that two ends stay is as completely reflecting mirror; The surface layer structure of negative area makes this superficial layer have surface modes in the middle of changing; The superficial layer of centre part or the nearest adjacent bed of superficial layer are carried out periodic modulation, and be twice to lattice period that should surface modes modulation period, makes neighbour's layer of this superficial layer or superficial layer have periodic undulation.
Further, the wavy fluctuating of described periodicity is meant at the superficial layer of mid portion every a medium post along vertical cavity surface direction minute movement certain distance up or down.
Further, the wavy fluctuating of described periodicity is meant at the nearest adjacent bed of mid portion superficial layer every a medium post along vertical cavity surface direction minute movement certain distance up or down.
Neighbour's layer structure of appropriate change photon crystal surface layer of the present invention or superficial layer, make neighbour's layer of superficial layer or superficial layer have periodic undulation, thereby change the transmit direction of surface wave laser, by original end emission changing into vertical cavity surface emission, and the equiphase surface of emergent light is very smooth.It is good that laser of the present invention has a unimodality, quality factor height, good directionality, advantage such as volume is little, and is easy of integration.This art designs thinking is simple, and integration is good, and is applied widely, can use any luminescent material to constitute one dimension (multilayer film), two dimension, three-dimensional (thin-slab structure that comprises two-dimension periodic) photonic crystal, and the structure of photonic crystal can be an any type.Can design the surface wave laser of different-waveband according to the characteristics of luminescence of different materials, particularly the light source device with semi-conducting material design optical communication wave band has prior practical value.
Description of drawings
Fig. 1 two-dimensional photonic crystal surface ripple micro-cavity structure and super primitive cell structure schematic diagram, the superficial layer in this chamber is by periodic modulation;
Fig. 2 two-dimensional photonic crystal surface ripple micro-cavity structure schematic diagram, the nearest adjacent bed of this chamber superficial layer is by periodic modulation;
Fig. 3 two-dimension square lattice column structure TM modal dispersion curve synoptic diagram;
The Transient distribution figure of electric field during Fig. 4 superficial layer modulation type laser steady operation;
Outer some electric fields of Fig. 5 superficial layer modulation type laser chamber are variation diagram in time;
Spectrogram during Fig. 6 superficial layer modulation type laser steady operation;
The Transient distribution figure of electric field during the nearest adjacent bed modulation type laser steady operation of Fig. 7 superficial layer;
Outer some electric fields of the nearest adjacent bed modulation type laser chamber of Fig. 8 superficial layer are variation diagram in time;
Spectrogram during the nearest adjacent bed modulation type laser steady operation of Fig. 9 superficial layer.
Embodiment
Below by two specific embodiments the method for designing of vertical cavity side transmission photon crystal surface wave laser of the present invention is described,
1, selected luminescent material is determined the material refractive index, selects the photon crystal structure type, determines structural parameters; Select semiconductive luminescent materials InGaAsP in the specific embodiment of the invention for use, refractive index is n=3.4, and its centre wavelength is 1.55 μ m, is present extensive use optical communicating waveband, and the technology of preparing maturation of this material.By this semiconductor medium post structure photon crystal surface ripple cavity (as shown in Figure 1, the axis of medium post is along the z direction of principal axis, surperficial along the x direction of principal axis, y axle vertical cavity surface): the two-dimension square lattice structure that described cavity is made up of a plurality of medium posts, the radius of superficial layer medium post is r
2=0.1a, the radius of other medium post are r
1=0.2a, a is a lattice period here, is variable temporarily.
2, utilize super primitive unit cell technology and plane wave expansion method to calculate the dispersion relation of this structure, obtain surface modes:
The super primitive cell structure that the present invention selects, size is 1a * 20a.As shown in Figure 1, on the x direction lattice period a, selection cycle is h on the y direction
1+ h
2=20a, wherein the photon crystal surface layer is above is air layer, highly is h
1=10a; Surface wave can not be propagated in photonic crystal and can not propagate in air, so these surface modes should be in the photonic band gap, and does not satisfy airborne communication mode.According to this qualifications, we can find corresponding surface modes on its dispersion curve, i.e. the surface wave that on behalf of this structure, the thick dashed line in the band gap just have among Fig. 3.Its frequency range is (0.287c/a, 0.424c/a), and c is the light velocity in the vacuum.Because the band edge attitude has very little group velocity, helps improving the quality factor of laser cavity.Here near the band edge pattern we the option table ground roll f=0.3914c/a is the operating frequency of laser.According to the central wavelength lambda=1.55 μ m of InP luminescent material, we can determine that the lattice period of photonic crystal is a=0.61 μ m.
3, design surface ripple microcavity cavity, and make the superficial layer of this cavity or the nearest adjacent bed of superficial layer have periodic undulation:
Fig. 1 is an example of the present invention, and the housing surface layer has periodic undulation, and Fig. 2 is another instantiation of the present invention, and the nearest adjacent bed of housing surface layer has periodic undulation, and the system size all is 26a * 13a.
At first, excavate a few row's medium posts downwards from the centre in a side of selected photonic crystal, the part that two ends stay is as completely reflecting mirror; The chamber of microcavity cavity is long to be L
1=26a, the length of surperficial one deck is L
2=20a, the height in chamber are h
2+ h
3=12a, the height that push up to the chamber at the superficial layer center are h
3=2a, the distance at the bottom of the chamber is h
2=10a, the height of end mirror are h
3=2a.
Secondly, change in the middle of the radius of superficial layer medium post of negative area, make its radius less than other medium posts; The radius of recessed superficial layer medium post is 0.1a in the middle of changing in this specific embodiment.
At last, the superficial layer of centre part and the nearest adjacent bed of superficial layer are carried out periodic modulation respectively, promptly every a medium post along vertical cavity surface direction minute movement certain distance (this distance is 0.1a in this specific embodiment) up or down, thereby make the nearest adjacent bed of this superficial layer and superficial layer have periodic undulation, thereby obtain micro-cavity structure as shown in Figure 1, 2.The nearest adjacent bed of superficial layer and superficial layer just has Λ=2a modulation period like this.The Bloch wave vector k of band edge attitude
x=π/a, corresponding wavelength X
x=2a, and modulation period, Λ=2a satisfied the zero degree diffraction conditions of surface wave, so laser can directed outgoing, i.e. vertical cavity surface emission.Yet this fine setting can not have a strong impact on cavity configuration, is that surface state can seriously not drift about yet.According to above mentality of designing, we obtain the two-dimensional photonic crystal surface wave laser of two kinds of vertical cavity surface emissions.
4, utilize the sharp process of penetrating of finite time-domain difference method numerical simulation laser, verify the correctness that we design:
The result of checking is shown in 4～9: Fig. 4,7 is the instantaneous electric field spatial distribution after two lasers are stablized starting of oscillation.Can be clearly seen that from figure laser is perpendicular to the chamber surface launching, and have very smooth wave surface.Fig. 5,8 concerns E (t) over time for any electric field of space on the two-laser vertical cavity surface.Two-laser all is the single mode starting of oscillation as can be seen from the figure.The fourier spectrum corresponding according to E (t), shown in Fig. 6,9, the excitation wavelength of two-laser is respectively 1.568 μ m and 1.573 μ m as can be known.As can be seen, the type laser has been realized the vertical cavity surface emission, and has good unimodality from these figure, and the wave surface of emergent light is very smooth.
Above-described is two preferable specific embodiments of the present invention; protection scope of the present invention is not limited to above-mentioned specific embodiment; such as; periodic modulation to superficial layer or superficial layer neighbour layer can also adopt other modes, can be to cut away different degree every a hole for airport for example.Such as, not necessarily must make the radius of the radius of superficial layer medium post less than other medium posts, only need be that superficial layer medium post is different from other medium post and all can realizes same effect, comprise radius difference, refractive index difference or shape difference.
Claims (5)
1. the method for designing of a vertical cavity side transmission photon crystal surface wave laser comprises the steps:
Step 1, selected luminescent material are determined the material refractive index, select the photon crystal structure type, determine structural parameters;
Step 2, utilize super primitive unit cell technology and plane wave expansion method to calculate the dispersion relation of this structure, obtain surface modes, calculate lattice period that should surface modes; It is characterized in that, also comprise:
Step 3, design surface ripple microcavity cavity make the superficial layer of this cavity or the nearest adjacent bed of superficial layer have periodic undulation, and described design surface ripple microcavity cavity comprises the steps:
Step 31, excavate a part downwards from the centre in a side of selected photonic crystal, the part that two ends stay is as completely reflecting mirror;
The surface layer structure of negative area makes this superficial layer have surface modes in the middle of step 32, the change;
Step 33, the superficial layer of centre part or the nearest adjacent bed of superficial layer are carried out periodic modulation, be the lattice period of twice modulation period, makes the nearest adjacent bed of this superficial layer or superficial layer have periodic undulation.
2. the method for designing of a kind of vertical cavity side transmission photon crystal surface wave laser according to claim 1 is characterized in that, also comprises:
Step 4, utilize the sharp process of penetrating of this laser of finite time-domain difference method numerical simulation.
3. vertical cavity side transmission photon crystal surface wave laser, its method for designing is as follows: step 1, selected luminescent material, determine the material refractive index, select the photon crystal structure type, determine structural parameters; Step 2, utilize super primitive unit cell technology and plane wave expansion method to calculate the dispersion relation of this structure, obtain surface modes, calculate lattice period that should surface modes; This vertical cavity side transmission photon crystal surface wave laser comprises the cavity with superficial layer, it is characterized in that,
Also comprise step 3, excavate a part downwards from the centre in a side of selected photonic crystal, the part that two ends stay is as completely reflecting mirror; The surface layer structure of negative area makes this superficial layer have surface modes in the middle of changing; The superficial layer of centre part or the nearest adjacent bed of superficial layer are carried out periodic modulation, and be twice to lattice period that should surface modes modulation period, makes the nearest adjacent bed of this superficial layer or superficial layer have periodic undulation.
4. photon crystal surface wave laser according to claim 3 is characterized in that, the wavy fluctuating of described periodicity is meant at the superficial layer of mid portion every a medium post along vertical cavity surface direction minute movement certain distance up or down.
5. vertical cavity side transmission photon crystal surface wave laser according to claim 3, it is characterized in that the wavy fluctuating of described periodicity is meant at the nearest adjacent bed of the superficial layer of mid portion every a medium post along vertical cavity surface direction minute movement certain distance up or down.
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Non-Patent Citations (6)
| Title |
|---|
| E. Moreno, F. J. Garcia-Vidal, and L. Martin-Moreno.Enhanced transmission and beaming of light via photoniccrystal surface modes.Physical.Review B69.2004,69121402-1-4. * |
| E. Moreno, L. Martín-Moreno, F. J. García-Vidal.Efficient coupling of light into and out of a photoniccrystalwave guidevia surface modes.Photonics AND Nanostructures. Fundamentals and Applications 2(2004).2004,(2(2004)),97-102. |
| E. Moreno, L. Martín-Moreno, F. J. García-Vidal.Efficient coupling of light into and out of a photoniccrystalwave guidevia surface modes.Photonics AND Nanostructures. Fundamentals and Applications 2(2004).2004,(2(2004)),97-102. * |
| E.Moreno F. J. Garcia-Vidal |
| JP特开2000-332351A 2000.11.30 |
| WO 2006/056208 A2,全文. |
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