CN101265106A - Method for preparing nano/nano-type Si3N4/SiC nano multi-phase ceramic - Google Patents
Method for preparing nano/nano-type Si3N4/SiC nano multi-phase ceramic Download PDFInfo
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- CN101265106A CN101265106A CN 200810086327 CN200810086327A CN101265106A CN 101265106 A CN101265106 A CN 101265106A CN 200810086327 CN200810086327 CN 200810086327 CN 200810086327 A CN200810086327 A CN 200810086327A CN 101265106 A CN101265106 A CN 101265106A
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- 239000000919 ceramic Substances 0.000 title claims abstract description 64
- 238000000034 method Methods 0.000 title claims abstract description 29
- 229910052581 Si3N4 Inorganic materials 0.000 title abstract 3
- 238000005245 sintering Methods 0.000 claims abstract description 52
- 239000000843 powder Substances 0.000 claims abstract description 28
- 238000000713 high-energy ball milling Methods 0.000 claims abstract description 19
- 239000007787 solid Substances 0.000 claims abstract description 12
- 239000002243 precursor Substances 0.000 claims abstract description 10
- 239000000203 mixture Substances 0.000 claims abstract description 9
- 238000000498 ball milling Methods 0.000 claims abstract description 7
- 230000001681 protective effect Effects 0.000 claims abstract description 7
- 238000010298 pulverizing process Methods 0.000 claims abstract 6
- 238000000197 pyrolysis Methods 0.000 claims description 17
- 239000004677 Nylon Substances 0.000 claims description 16
- 229920001778 nylon Polymers 0.000 claims description 16
- 239000011347 resin Substances 0.000 claims description 16
- 229920005989 resin Polymers 0.000 claims description 16
- 238000002360 preparation method Methods 0.000 claims description 6
- 238000000227 grinding Methods 0.000 claims description 4
- 239000002994 raw material Substances 0.000 claims description 4
- 239000004567 concrete Substances 0.000 claims description 2
- 239000012535 impurity Substances 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 229910001220 stainless steel Inorganic materials 0.000 claims description 2
- 239000010935 stainless steel Substances 0.000 claims description 2
- 239000007789 gas Substances 0.000 claims 2
- 239000000463 material Substances 0.000 abstract description 12
- 238000004132 cross linking Methods 0.000 abstract description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 239000012467 final product Substances 0.000 abstract 2
- 238000007711 solidification Methods 0.000 abstract 2
- 230000008023 solidification Effects 0.000 abstract 2
- 238000002490 spark plasma sintering Methods 0.000 abstract 2
- 238000005979 thermal decomposition reaction Methods 0.000 abstract 2
- 238000009700 powder processing Methods 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 24
- 239000013078 crystal Substances 0.000 description 17
- 239000002245 particle Substances 0.000 description 7
- 229920001709 polysilazane Polymers 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 235000013339 cereals Nutrition 0.000 description 6
- 238000002389 environmental scanning electron microscopy Methods 0.000 description 6
- 229910002804 graphite Inorganic materials 0.000 description 6
- 239000010439 graphite Substances 0.000 description 6
- 238000012856 packing Methods 0.000 description 6
- 238000005303 weighing Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 239000002114 nanocomposite Substances 0.000 description 3
- 239000011858 nanopowder Substances 0.000 description 3
- 241000196324 Embryophyta Species 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- HPNSNYBUADCFDR-UHFFFAOYSA-N chromafenozide Chemical compound CC1=CC(C)=CC(C(=O)N(NC(=O)C=2C(=C3CCCOC3=CC=2)C)C(C)(C)C)=C1 HPNSNYBUADCFDR-UHFFFAOYSA-N 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 241000220317 Rosa Species 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 230000003064 anti-oxidating effect Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 235000013312 flour Nutrition 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Abstract
The invention provides a novel method for producing nanometer/nanometer-type Si3N4/SiC nanometer multiphase ceramics. The method comprises the following steps: (1) low-temperature cross-linking and solidification: organic precursors undergo low-temperature cross-linking and solidification in the protective atmosphere to produce a non-crystalline solid; (2) ball mill pulverization: the non-crystalline solid is ground with a ball mill; (3) high-temperature thermal decomposition: the resulting mixture produced by ball milling undergoes high-temperature thermal decomposition in the protective atmosphere to produce SiCN powder; (4) ball mill pulverization: the SiCN powder is further ground with the ball mill while introducing a sintering aid; (5) spark plasma sintering (SPS): the mixture produced by high-energy ball milling undergoes SPS, to produce nanometer/nanometer-type Si3N4/SiC nanometer multiphase ceramic. Compared with the prior art, the method overcomes the problems in the conventional powder processing, can change the composition, structure and performance of the final product by controlling the atom size of the organic precursors, and ensures the final product to meet the performance requirements for various materials.
Description
Technical field
The present invention relates to a kind of nanometer/Nano type Si for preparing
3N
4The method of/SiC nano heterogeneous ceramic belongs to technical field of material.
Technical background
Nano heterogeneous ceramic is the method for a kind of new raising Mechanical Property of Ceramics that rose in recent years, and different from traditional micron order polycrystalline ceramics, nano ceramics microstructure to material on nanoscale is regulated and control, and then improves the combination property of pottery.Studies show that, the nano heterogeneous ceramic of different series, breaking tenacity improves 2~3 times, and fracture toughness property improves 2~4 times, and use temperature improves greatly.Nano heterogeneous ceramic has now become an important channel of improving ceramic material property, becomes one of focus of current high-temperature structural ceramics research.
Si
3N
4/ SiC complex phase ceramic is than single-phase Si
3N
4Or single-phase SiC has better performance, and the fracture toughness as more much higher than SiC material compares Si
3N
4The better elevated temperature strength of material, creep resistance and high-temperature oxidation resistance, wear-resistant, corrosion-resistant etc., in high-technology field and modern industry production, have broad application prospects.Be that raw material is prepared nano SiC granule and strengthened Si since the people such as Japanese Niihara adopt the non-crystalline flour of SiCN
3N
4The Si of matrix
3N
4/ SiC complex phase ceramic, and find that its mechanical property significantly improves, bending strength reaches 1550MPa, Si
3N
4/ SiC nano heterogeneous ceramic becomes at first system of high-temperature structural ceramics of future generation with its excellent mechanical property.
In existing research work, be to adopt nano SiC crystal grain and sub-micron Si mostly
3N
4Powder, or nanometer SiCN end and sub-micron Si
3N
4Powder mixes, and introduces Y
2O
3, Al
2O
3, La
2O
3, the sintering aids such as MgO, sintering forms under 1750 ℃~1900 ℃ high temperature, and what finally obtain is the intracrystalline that forms of nano particle and micron particles/crystal boundary type Nanocomposite material.And, existing research work is directly to adopt nano powder (such as nano SiC), this method exist some subject matters as: the nano SiC powder that introduce (1) is difficult to Uniform Dispersion, thereby causes easily the material microstructure inhomogeneous, is Si such as the nano SiC enrichment of some reunion
3N
4Grain boundaries; (2) because the huge specific surface of Nanosize powder forms reunion (hard aggregation or soft-agglomerated) easily, cause compact density lower; The temperature (1750~1900 ℃) that (3) the follow-up sintering of this method need to be high and long-time insulation (2~4h), cause crystal grain too to be grown up.Thereby finally prepd nano heterogeneous ceramic be actually the Nano/micron type but not the two-phase crystallite dimension all less than the Si of nanometer/Nano type of 100nm
3N
4/ SiC nano heterogeneous ceramic.
Summary of the invention
Technical problem to be solved by this invention provides a kind of nanometer/Nano type Si for preparing
3N
4The new method of/SiC complex phase ceramic.Method of the present invention can overcome some problems of bringing on direct employing nanometer, the submicron powder technology, and Fast Sintering is prepared the two-phase crystallite dimension all less than the nanometer of 100nm/Nano type Si under relatively low sintering temperature
3N
4/ SiC nano heterogeneous ceramic.
The present invention solves the problems of the technologies described above the technical scheme that adopts: this preparation nanometer/Nano type Si
3N
4The method of/SiC nano heterogeneous ceramic, it comprises following concrete steps:
1) crosslinked at low temperature solidifies: organic precursor solidifies in carrying out crosslinked at low temperature under protective atmosphere, obtains non-crystalline solids;
2) high-energy ball milling is pulverized: non-crystalline solids are packed into carry out dry ball milling in the nylon resin ball grinder in high energy ball mill and pulverize;
3) high temperature pyrolysis: the mixture behind the high-energy ball milling carries out high temperature pyrolysis, obtains the SiCN powder at certain pyrolysis temperature pyrolysis certain hour under protective atmosphere.
4) high-energy ball milling is pulverized: the SiCN powder is packed into carry out dry ball milling in the nylon resin ball grinder in high energy ball mill and pulverize, introduce sintering aid in the time of ball milling, make non-crystalline state powder and sintering aid mix;
5) discharge plasma sintering (SPS): the mixture behind the high-energy ball milling carries out the SPS Fast Sintering, obtains the two-phase crystallite dimension all less than the nanometer of 100nm/Nano type Si
3N
4/ SiC nano heterogeneous ceramic.
In the described step (1), the raw material that uses is polysilazane, thereby also can adopt the organic precursor of other chemical ingredientss to prepare the nano heterogeneous ceramic of other materials system.
In described step (1) and (3), the pyrolysis plant that uses be the pipe type atmosphere sintering stove, also can adopt other atmosphere sintering furnaces.For anti-oxidation and pollution, the shielding gas of employing is N
2, also can adopt NH
3With rare gas elementes such as Ar.
In described step (2) and (4), employed ball milling method is high-energy ball milling, and the mill of preferentially selecting is situated between and is Si
3N
4Ceramic Balls, the ball grinder that uses is the nylon resin ball grinder, also can use the Ceramic Balls grinding jar, avoids using the metal ball grinding jar such as stainless steel to introduce other contaminating impurities to reduce.
In the described step (4), the sintering aid of introducing is Y
2O
3, also can adopt other sintering aids such as Al
2O
3Deng.
In the described step (5), the agglomerating plant that is adopted is the discharge plasma sintering oven.
Compared with prior art, the invention has the advantages that:
1. the present invention can prepare the two-phase crystallite dimension less than the nanometer of 100nm/Nano type Si
3N
4/ SiC nano heterogeneous ceramic and unconventional intracrystalline/crystal boundary type Nanocomposite material.
2. the present invention can overcome direct employing nanometer, sub-micrometer SiC and Si
3N
4Some problems of bringing on the powder technology are low etc. such as the inhomogeneous and compact density of the dispersion of powder.
3. the present invention adopts organic precursor method to prepare Si
3N
4Pyrolytic reaction and the sintering temperature of system's pottery are low, be usually less than 1650 ℃, and the sintering temperature of traditional handicraft are 1750 ℃~1900 ℃.
4. the present invention can satisfy the performance requriements of differing materials to change product component, structure and character, thereby be particularly suitable for making ceramic matric composite by the design of organic precursor at atomic scale.
Description of drawings
Fig. 1 is the embodiment of the invention one prepared Si
3N
4/ SiC nano heterogeneous ceramic fracture ESEM (SEM) figure;
Fig. 2 is the embodiment of the invention two prepared Si
3N
4/ SiC nano heterogeneous ceramic fracture ESEM (SEM) figure;
Fig. 3 is the embodiment of the invention three prepared Si
3N
4/ SiC nano heterogeneous ceramic fracture ESEM (SEM) figure;
Fig. 4 is the embodiment of the invention one~three prepared Si
3N
4/ SiC nano heterogeneous ceramic X-ray diffraction (XRD) figure;
Fig. 5 is the embodiment of the invention four prepared Si
3N
4/ SiC nano heterogeneous ceramic fracture ESEM (SEM) figure;
Fig. 6 is the embodiment of the invention five prepared Si
3N
4/ SiC nano heterogeneous ceramic fracture ESEM (SEM) figure;
Fig. 7 is the embodiment of the invention six prepared Si
3N
4/ SiC nano heterogeneous ceramic fracture ESEM (SEM) figure;
Embodiment
The present invention is described in further detail below in conjunction with accompanying drawing embodiment.
Embodiment one
Take by weighing initial feed polysilazane 10g and place 99 alumina-ceramic crucibles, at the N of 0.1MPa
2In the tubular type sintering oven, be warmed up to 260 ℃ from room temperature under the gas shiled atmosphere, be incubated 0.5 hour and carry out crosslinking curing with 10 ℃/min.The solid particle that obtains packed into carry out the dry method high-energy ball milling in the nylon resin ball grinder and pulverize and be placed in the 99 aluminium oxide ceramics crucibles, at N in 24 hours
2Be warmed up to 1000 ℃ with 10 ℃/min from room temperature under the atmosphere protection in pipe type sintering furnace, be incubated 2 hours and carry out pyrolysis, the amorphous SiCN powder that obtains is introduced the Y of 3wt%
2O
3The high-energy ball milling of packing in the nylon resin ball grinder was further pulverized after 12 hours, the powder that obtains packed into place the SPS sintering furnace in the graphite jig, after 600 ℃ of 300 ℃/min intensifications, then heat up 1600 ℃ with 100 ℃/min and under the pressure of 80MPa, in vacuum environment, carry out SPS Fast Sintering 5min, powered-down is with the stove cool to room temperature, obtains to have the nanometer of nanoscale/Nano type Si
3N
4/ SiC complex phase ceramic, its microstructure as shown in Figure 1.Microstructure shows that prepared nano heterogeneous ceramic grain size is comparatively even, is equiax crystal, and the average crystal grain size is~60nm that compact structure, employing drainage detect its density and be~2.89g/cm
3
Embodiment two
Take by weighing initial feed polysilazane 10g and place 99 alumina-ceramic crucibles, at the N of 0.1MPa
2In the tubular type sintering oven, be warmed up to 260 ℃ from room temperature under the gas shiled atmosphere, be incubated 0.5 hour and carry out crosslinking curing with 10 ℃/min.The solid particle that obtains packed into carry out the dry method high-energy ball milling in the nylon resin ball grinder and pulverize and be placed in the 99 aluminium oxide ceramics crucibles, at N in 24 hours
2Be warmed up to 1000 ℃ with 10 ℃/min from room temperature under the atmosphere protection in pipe type sintering furnace, be incubated 2 hours and carry out pyrolysis, the amorphous SiCN powder that obtains is introduced the Y of 3wt%
2O
3The high-energy ball milling of packing in the nylon resin ball grinder was further pulverized after 12 hours, the powder that obtains packed into place the SPS sintering furnace in the graphite jig, after 600 ℃ of 300 ℃/min intensifications, then heat up 1600 ℃ with 100 ℃/min and under the pressure of 80MPa, in vacuum environment, carry out SPS Fast Sintering 10min, powered-down is with the stove cool to room temperature, obtains to have the nanometer of nanoscale/Nano type Si
3N
4/ SiC complex phase ceramic, its microstructure as shown in Figure 2.Microstructure shows that prepared nano heterogeneous ceramic grain size is comparatively even, is equiax crystal, and the average crystal grain size is~90nm that compact structure, employing drainage detect its density and be~2.96g/cm
3
Embodiment three
Take by weighing initial feed polysilazane 10g and place 99 alumina-ceramic crucibles, at the N of 0.1MPa
2In the tubular type sintering oven, be warmed up to 260 ℃ from room temperature under the gas shiled atmosphere, be incubated 0.5 hour and carry out crosslinking curing with 10 ℃/min.The solid particle that obtains packed into carry out the dry method high-energy ball milling in the nylon resin ball grinder and pulverize and be placed in the 99 aluminium oxide ceramics crucibles, at N in 24 hours
2Be warmed up to 1000 ℃ with 10 ℃/min from room temperature under the atmosphere protection in pipe type sintering furnace, be incubated 2 hours and carry out pyrolysis, the amorphous SiCN powder that obtains is introduced the Y of 3wt%
2O
3The high-energy ball milling of packing in the nylon resin ball grinder was further pulverized after 12 hours, the powder that obtains packed into place the SPS sintering furnace in the graphite jig, after 600 ℃ of 300 ℃/min intensifications, then heat up 1600 ℃ with 100 ℃/min and under the pressure of 80MPa, in vacuum environment, carry out SPS Fast Sintering 15min, powered-down is with the stove cool to room temperature, obtains to have the nanometer of nanoscale/Nano type Si
3N
4/ SiC complex phase ceramic, its microstructure as shown in Figure 3.Microstructure shows that prepared nano heterogeneous ceramic grain size is comparatively even, is equiax crystal, and the average crystal grain size is~110nm that compact structure, employing drainage detect its density and be~2.98g/cm
3Fig. 4 is the prepared nanometer of the embodiment of the invention one~three/Nano type Si
3N
4The XRD collection of illustrative plates of/SiC complex phase ceramic shows that the main phase of the complex phase ceramic of preparation consists of β-SiC (JCPDS Card No.29-1129), α-Si
3N
4(JCPDS Card No.41-0360) and β-Si
3N
4(JCPDS CardNo.33-1160), and a small amount of α-Y is arranged
2Si
2O
7(JCPDS Card No.38-0223), α-Y
2Si
2O
7Mainly be because being added in the middle of the high-temperature sintering process of sintering aid forms.
Embodiment four
Take by weighing initial feed polysilazane 10g and place 99 alumina-ceramic crucibles, at the N of 0.1MPa
2In the tubular type sintering oven, be warmed up to 260 ℃ from room temperature under the gas shiled atmosphere, be incubated 0.5 hour and carry out crosslinking curing with 10 ℃/min.The solid particle that obtains packed into carry out the dry method high-energy ball milling in the nylon resin ball grinder and pulverize and be placed in the 99 aluminium oxide ceramics crucibles, at N in 24 hours
2Be warmed up to 1000 ℃ with 10 ℃/min from room temperature under the atmosphere protection in pipe type sintering furnace, be incubated 2 hours and carry out pyrolysis, the amorphous SiCN powder that obtains is introduced the Y of 3wt%
2O
3The high-energy ball milling of packing in the nylon resin ball grinder was further pulverized after 12 hours, the powder that obtains packed into place the SPS sintering furnace in the graphite jig, after 600 ℃ of 300 ℃/min intensifications, then heat up 1550 ℃ with 100 ℃/min and under the pressure of 80MPa, in vacuum environment, carry out SPS Fast Sintering 10min, powered-down is with the stove cool to room temperature, obtains to have the nanometer of nanoscale/Nano type Si
3N
4/ SiC complex phase ceramic, its microstructure as shown in Figure 5.Microstructure shows that prepared nano heterogeneous ceramic grain size is comparatively even, is equiax crystal, and the average crystal grain size is~80nm that compact structure, employing drainage detect its density and be~2.91g/cm
3
Embodiment five
Take by weighing initial feed polysilazane 10g and place 99 alumina-ceramic crucibles, at the NH of 0.1MPa
3In the tubular type sintering oven, be warmed up to 260 ℃ from room temperature under the gas shiled atmosphere, be incubated 0.5 hour and carry out crosslinking curing with 10 ℃/min.The solid particle that obtains packed into carry out the dry method high-energy ball milling in the nylon resin ball grinder and pulverize and be placed in the 99 aluminium oxide ceramics crucibles, at N in 24 hours
2Be warmed up to 1000 ℃ with 10 ℃/min from room temperature under the atmosphere protection in pipe type sintering furnace, be incubated 2 hours and carry out pyrolysis, the amorphous SiCN powder that obtains is introduced the Y of 3wt%
2O
3The high-energy ball milling of packing in the nylon resin ball grinder was further pulverized after 12 hours, the powder that obtains packed into place the SPS sintering furnace in the graphite jig, after 600 ℃ of 300 ℃/min intensifications, then heat up 1600 ℃ with 200 ℃/min and under the pressure of 80MPa, in vacuum environment, carry out SPS Fast Sintering 10min, powered-down is with the stove cool to room temperature, obtains to have the nanometer of nanoscale/Nano type Si
3N
4/ SiC complex phase ceramic, its microstructure as shown in Figure 6.Microstructure shows that prepared nano heterogeneous ceramic grain size is comparatively even, is equiax crystal, and the average crystal grain size is~80nm that compact structure, employing drainage detect its density and be~2.96g/cm
3
Embodiment six
Take by weighing initial feed polysilazane 10g and place 99 alumina-ceramic crucibles, at the N of 0.1MPa
2In the tubular type sintering oven, be warmed up to 260 ℃ from room temperature under the gas shiled atmosphere, be incubated 0.5 hour and carry out crosslinking curing with 10 ℃/min.The solid particle that obtains packed into carry out the dry method high-energy ball milling in the nylon resin ball grinder and pulverize and be placed in the 99 aluminium oxide ceramics crucibles, at N in 24 hours
2Be warmed up to 1000 ℃ with 10 ℃/min from room temperature under the atmosphere protection in pipe type sintering furnace, be incubated 2 hours and carry out pyrolysis, the amorphous SiCN powder that obtains is introduced the Y of 3wt%
2O
3The high-energy ball milling of packing in the nylon resin ball grinder was further pulverized after 12 hours, the powder that obtains packed into place the SPS sintering furnace in the graphite jig, after 600 ℃ of 300 ℃/min intensifications, then heat up 1600 ℃ with 100 ℃/min and under the pressure of 60MPa, in vacuum environment, carry out SPS Fast Sintering 10min, powered-down is with the stove cool to room temperature, obtains to have the nanometer of nanoscale/Nano type Si
3N
4/ SiC complex phase ceramic, its microstructure as shown in Figure 7.Microstructure shows that prepared nano heterogeneous ceramic grain size is comparatively even, is equiax crystal, and the average crystal grain size is~100nm that compact structure, employing drainage detect its density and be~2.89g/cm
3
The present invention proposes a kind of new employing organic precursor pyrolysis in conjunction with the method for SPS sintering, can prepare the two-phase crystallite dimension all less than the nanometer of 100nm/Nano type Si by regulation and control SPS sintering process parameter
3N
4/ SiC nano heterogeneous ceramic, and the prepared intracrystalline of unconventional direct employing nano powder (such as nano SiC)/crystal boundary type Nanocomposite material.Method of the present invention can overcome some problems such as the initial raw material nano powder that bring on the conventional powder technology and disperse temperature (1750~1900 ℃) inhomogeneous, that compact density is lower and high and long-time insulation (2~4h).Simultaneously the present invention can satisfy the performance requirement of different materials by the design of organic precursor at atomic scale to change product component, structure and character, be particularly suitable for making ceramic matric composite.
Claims (5)
1, a kind of nanometer/Nano type Si for preparing
3N
4The new method of/SiC nano heterogeneous ceramic, it comprises following concrete steps:
(1) crosslinked at low temperature solidifies: organic precursor solidifies in carrying out crosslinked at low temperature under protective atmosphere, obtains non-crystalline solids;
(2) ball mill pulverizing: non-crystalline solids are carried out ball mill pulverizing in ball mill;
(3) high temperature pyrolysis: the mixture behind the ball milling carries out high temperature pyrolysis, obtains the SiCN powder at certain pyrolysis temperature pyrolysis certain hour under protective atmosphere.
(4) ball mill pulverizing: with the further ball mill pulverizing of SiCN powder, introduce sintering aid in the time of ball milling, make non-crystalline state powder and sintering aid mix;
(5) discharge plasma sintering (SPS): the mixture behind the high-energy ball milling carries out the SPS Fast Sintering, obtains nanometer/Nano type Si
3N
4/ SiC nano heterogeneous ceramic.
2, preparation nanometer according to claim 1/Nano type Si
3N
4The method of/SiC nano heterogeneous ceramic is characterized in that: the raw material that uses in the described step (1) is organic precursor.
3, preparation nanometer according to claim 2/Nano type Si
3N
4The method of/SiC nano heterogeneous ceramic is characterized in that: in described step (1) and (3), curing and the pyrolysis plant of using is atmosphere sintering furnace, and the protective gas of employing is N
2, also can adopt NH
3With gases such as Ar.
4, preparation nanometer according to claim 2/Nano type Si
3N
4The method of/SiC nano heterogeneous ceramic is characterized in that: in described step (2) and (4), the mill of preferentially selecting is situated between and is Si
3N
4Ceramic Balls, the ball grinder that uses is the nylon resin ball grinder, also can use the Ceramic Balls grinding jar, avoids using the metal ball grinding jars such as stainless steel to avoid introducing other contaminating impurities.
5, preparation nanometer according to claim 4/Nano type Si
3N
4The method of/SiC nano heterogeneous ceramic is characterized in that: in the described step (5), employed sintering method is discharge plasma sintering (SPS).
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CN108147822A (en) * | 2017-12-26 | 2018-06-12 | 天津大学 | A kind of heat conduction silicon nitride-based material and preparation method thereof |
JPWO2020032036A1 (en) * | 2018-08-08 | 2021-08-10 | 京セラ株式会社 | Housing |
JPWO2020032035A1 (en) * | 2018-08-08 | 2021-08-12 | 京セラ株式会社 | substrate |
JPWO2020032034A1 (en) * | 2018-08-08 | 2021-08-26 | 京セラ株式会社 | Shading member |
JPWO2020032037A1 (en) * | 2018-08-08 | 2021-08-26 | 京セラ株式会社 | Holding member for optical products |
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JP7150025B2 (en) | 2018-08-08 | 2022-10-07 | 京セラ株式会社 | light shielding material |
US11987529B2 (en) | 2018-08-08 | 2024-05-21 | Kyocera Corporation | Light shielding member |
CN115354322A (en) * | 2022-08-05 | 2022-11-18 | 佳木斯大学 | Preparation method of high-porosity thermal barrier coating |
CN115354322B (en) * | 2022-08-05 | 2023-06-23 | 佳木斯大学 | Preparation method of high-pore thermal barrier coating |
CN118206385A (en) * | 2024-03-08 | 2024-06-18 | 宁波大学 | Silicon nitride and boron doped silicon nitride based amorphous ceramic and high-pressure preparation method thereof |
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