CN101261942A - Sensing semiconductor and its making method - Google Patents
Sensing semiconductor and its making method Download PDFInfo
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- CN101261942A CN101261942A CNA2007100860135A CN200710086013A CN101261942A CN 101261942 A CN101261942 A CN 101261942A CN A2007100860135 A CNA2007100860135 A CN A2007100860135A CN 200710086013 A CN200710086013 A CN 200710086013A CN 101261942 A CN101261942 A CN 101261942A
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- sensor chip
- active surface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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- Solid State Image Pick-Up Elements (AREA)
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Abstract
The invention discloses a sensing semiconductor device and a preparation method thereof, comprising the main steps that: a plurality of concave grooves are formed between pads corresponding to the active surfaces of an adjacent sensing chip on a wafer with a plurality of sensing chips; a conducting circuit in electric connection with the pads of the adjacent sensing chip is formed inside the concave grooves; the wafer is connected with a light penetrating body to seal and cover the sensing area of the sensing chip; the inactive surface of the wafer is thinned to the conducting circuit and to expose the conducting circuit; the cutting is performed along each sensing chip so as to form a plurality of sensing chips with the side having the conducting circuit; afterwards, the sensing chips are arranged on base plate module plates of a plurality of base plates which are arranged in an array, the conducting circuit of the sensing chip is electrically connected with the base plate, an insulating material is filled on the base plate module plate corresponding to each sensing chip so as to wrap the sensing chip, and the cutting is performed along the base plate to form a plurality of sensing semiconductor devices, thus being capable of solving the problem existing in the prior art.
Description
Technical field
The present invention relates to a kind of semiconductor device of sensing type and method for making thereof, particularly relate to the semiconductor device of sensing type and the method for making thereof of a kind of crystal wafer chip dimension encapsulation (WLCSP).
Background technology
Traditional image sensing formula packaging part (Image sensor package) mainly is sensing and detecting type chip (Sensor chip) to be connect place on the chip bearing member, and after being electrically connected this sensing and detecting type chip and chip bearing member by bonding wire, cover a glass in this sensing and detecting type chip top, can be captured by this sensing and detecting type chip for image light.So, this image sensing formula packaging part of finishing structure dress can be integrated into as on printed circuit board (PCB) (PCB) external device (ED) of etc.ing for factory of system, for as digital camera (DSC), digital camera (DV), optical mouse, reach the application of various electronic products such as mobile phone.
Simultaneously along with the message transmission capacity continues amplification, and electronic product microminiaturization and portable development trend, cause the high I/O (I/O) of general integrated circuit, high heat radiation, and the demand of size downsizing comes into one's own more, also impel the encapsulation kenel of integrated circuit electrically to reach undersized direction evolution towards height, therefore, industry a kind of crystal wafer chip dimension encapsulation (Wafer-Level Chip Scale Package by developing, WLCSP) semiconductor device of sensing type, use making that to finish package semiconductor device only little greater than the sensing and detecting type chip size of integrating wherein, and then effectively be applied in the electronic product of miniaturization.
See also Figure 1A to Fig. 1 E, U.S. Pat 6,646,289 semiconductor device of sensing type that disclosed and method for making schematic diagram thereof, it mainly provides the wafer 10A of a plurality of sensor chips 10 of a tool, forms extended link 11 (shown in Figure 1A) with 101 of weld pads in adjacent sensor chip 10; Again a glass 12 is sticked by an adhesion layer 13 and place on this extended link 11 (shown in 1B figure); Follow this wafer of thinning 10A, and in this wafer 10A back side is glutinous put a cover layer 14 after, 10 of corresponding more adjacent sensor chips with modes such as cutting or etching form one pass this cover layer 14, wafer 10A, extended link 11 and adhesion layer 13 and indent to the inclined notch 15 (shown in Fig. 1 C) of this glass 12; Form metals coiling 16 in this inclined notch 15 surfaces and near cover layer 14 surfaces should inclined notch, and make this metal coiling 16 be electrically connected to this extended link 11 (shown in Fig. 1 D); In the metal on these cover layer 14 surfaces coiling 16, plant afterwards and connect soldered ball 17, and carry out cutting operation, to make the semiconductor device of sensing type (shown in Fig. 1 E) of crystal wafer chip dimension encapsulation along 10 of this sensor chips respectively.U.S. Pat 6,777,767 also discloses similar technology in addition.
But in aforesaid semiconductor device of sensing type, owing to before formed the inclined notch relation from this wafer rear, therefore this semiconductor device side presents inclination corner cut form behind cutting operation, that is its vertical section is trapezoidal (plane width is shortened gradually by last) structure downwards, thereby the metal coiling that is formed at this semiconductor device side is acute angle with the extended link junction of chip end face weld pad and contacts, and easily taking place, stress concentrates the problem that causes the junction fracture, moreover, be to form inclined notch in processing procedure from wafer back part, because of being difficult for aligning to the tram, easily cause the offset that is provided with of inclined notch, cause the metal coiling can't be connected, even damage chip with extended link.
In addition,, influence the product reliability so be subject to outside contamination, and be easy to when doing to electrically connect, when the soldered ball reflow, cause short circuit problem with external device (ED) (as printed circuit board (PCB)) because of its metal coiling exposes to outside the semiconductor device.Moreover, need successively form the coiling of extended link and metal in its processing procedure, cause problems such as processing procedure complexity and cost height.
Therefore, how to design a kind of crystal wafer chip dimension semiconductor device of sensing type and method for making thereof of avoiding circuit that fracture takes place and exposing problem, can avoid again simultaneously in the prior art causing electrical bad connection of circuit and chip to damage problem, really be the required problem of urgently facing on the association area from the bit errors of wafer rear cutting.
Summary of the invention
In view of the defective of aforementioned prior art, main purpose of the present invention provides a kind of semiconductor device of sensing type and method for making thereof, thereby can avoid the junction because of angle breakage problem to take place sharply.
Another purpose of the present invention provides a kind of semiconductor device of sensing type and method for making thereof, thereby can avoid circuit to expose and be subjected to outside contamination to influence the product reliability, and the follow-up and extraneous integrity problem that electrically connects.
A further object of the present invention provides a kind of semiconductor device of sensing type and method for making thereof, thereby can avoid in the prior art causing electrical bad connection of circuit and chip to damage problem from the bit errors of wafer rear cutting.
For reaching aforementioned and other purpose, semiconductor device of sensing type method for making of the present invention mainly comprises: a wafer that includes a plurality of sensor chips is provided, this sensor chip has relative active surface and non-active surface, this active surface is provided with sensing area and a plurality of weld pad, to form a plurality of grooves between the weld pad of adjacent sensor chip active surface; In this groove, form the conducting wire, to electrically connect the weld pad of adjacent chips active surface; On this sensor chip, connect and put light penetrating object to hide this chip sensing area; The non-active surface of this sensor chip of thinning is to this groove, so that this conducting wire exposes to this non-active surface relatively; Along respectively cutting between this sensor chip, to form the sensor chip that a plurality of sides are formed with the conducting wire; Those sensor chips are connect to place be arrayed and have on the substrate module sheet of a plurality of substrates, and make the conducting wire of this sensor chip be electrically connected to this substrate; In on this substrate module sheet between corresponding each sensor chip fill insulant to coat this sensor chip and to expose outside this light penetrating object; And along between this substrate, cut, to form a plurality of semiconductor device of sensing type.
By aforesaid method for making, the present invention discloses a kind of semiconductor device of sensing type again, comprising: substrate; Sensor chip, have relative active surface and non-active surface, and on this active surface, be formed with a sensing area and a plurality of weld pad, and be formed with in this sensor chip side and extend the conducting wire be electrically connected to this weld pad, be electrically connected to this substrate for the conducting wire of this sensor chip by an electric conducting material; Light penetrating object is formed on the active surface of this sensor chip to hide this sensing area; And insulating material, cover this conducting wire exposed parts.
Therefore, semiconductor device of sensing type of the present invention and method for making thereof mainly include on the wafer of a plurality of sensor chips in one, form a plurality of grooves between the weld pad of corresponding adjacent sensor chip active surface, and in this groove, form to electrically connect the conducting wire of adjacent chips active surface weld pad, the non-active surface of this sensor chip of thinning is to this groove again, so that this conducting wire exposes to this non-active surface relatively, pass wafer and be different from prior art from the non-active surface of chip (wafer back part) formation, be electrically connected to the extended link of chip pad, adhesion layer and indent are to the inclined notch of this glass, form the metal coiling that is electrically connected to extended link in this inclined notch surface and near the cover surface should inclined notch again, to avoid prior art semiconductor device side to present inclination corner cut form, thereby the metal coiling that is formed at this semiconductor device side is acute angle with the extended link junction of chip pad and contacts, and the concentrated junction breakage problem that causes of generation stress, and because of being to form inclined notch in the prior art processing procedure from wafer back part, be difficult for aligning correct position, cause the notch position skew, cause metal coiling can't be connected, even damage problem such as chip with extended link; Then, the present invention can be along respectively cutting between this sensor chip, to form the sensor chip that a plurality of sides have the conducting wire, again those sensor chips are connect to place and be arrayed and have on the substrate module sheet of a plurality of substrates, and the conducting wire that makes this sensor chip is electrically connected to this substrate, and on this substrate module sheet between corresponding each sensor chip fill insulant to cover this conducting wire, and along between this substrate, cut, to form a plurality of semiconductor device of sensing type, thereby can avoid circuit to expose and be subjected to outside contamination to influence the product reliability, and the follow-up and extraneous integrity problem that electrically connects.
Description of drawings
Figure 1A to Fig. 1 E is the semiconductor device of sensing type and the method for making schematic diagram thereof of the crystal wafer chip dimension encapsulation that disclosed of prior art U.S. Pat 6,646,289;
Fig. 2 A to Fig. 2 I is the schematic diagram of semiconductor device of sensing type of the present invention and method for making first embodiment thereof; And
Fig. 3 A to Fig. 3 F is the schematic diagram of semiconductor device of sensing type of the present invention and method for making second embodiment thereof.
The component symbol explanation
10 sensor chips
The 10A wafer
101 weld pads
11 extended links
12 glass
13 adhesion layers
14 cover layers
15 inclined notch
The coiling of 16 metals
17 soldered balls
20 sensor chips
The 20A wafer
201 weld pads
202 sensing areas
203, the 203A groove
21 conducting wires
22 light penetrating objects
23 adhesion layers
30 substrates
30A substrate module sheet
31 electric conducting materials
301 electrical contacts
32 adhesion layers
33 insulating material
Embodiment
Below by particular specific embodiment explanation embodiments of the present invention, those skilled in the art can understand other advantage of the present invention and effect easily by the content that this specification disclosed.
See also Fig. 2 A to Fig. 2 I, be the schematic diagram of semiconductor device of sensing type of the present invention and method for making first embodiment thereof.And below will produce semiconductor device of sensing type of the present invention as an illustration to adopt batch mode to make in a large number.
Shown in Fig. 2 A, the one wafer 20A that includes a plurality of sensor chips 20 is provided, this sensor chip 20 has relative active surface and non-active surface, this active surface is provided with sensing area 202 and a plurality of weld pad 201, form a plurality of grooves 203 with 201 of weld pads in adjacent sensor chip 20 active surfaces, wherein this groove 203 shape that can be in the shape of the letter V also can present other shape, certainly as U type groove.
Shown in Fig. 2 B and Fig. 2 C, wherein Fig. 2 C is the vertical view of Fig. 2 B, utilize and in this groove 203, form conducting wire 21 as sputter (sputtering) or evaporation modes such as (vaporing), to electrically connect the weld pad 201 of adjacent sensor chip 20 active surfaces, wherein the material of this conducting wire 21 can be titanium/copper/nickel (Ti/Cu/Ni), titanizing tungsten/gold (TiW/Au), aluminium/nickel vanadium/copper (Al/NiV/Cu), titanium/nickel vanadium/copper (Ti/NiV/Cu), titanizing tungsten/nickel (TiW/Ni), titanium/copper/copper (Ti/Cu/Cu), titanium/copper/copper/nickel (Ti/Cu/Cu/Ni) etc.
Shown in Fig. 2 D, on this sensor chip 20, connect and put light penetrating object 22 to hide this chip sensing area 202, wherein this light penetrating object 22 for example is a glass, it connects by an adhesion layer 23 and places on these sensor chip 20 active surfaces, and cover this chip 20 lip-deep conducting wires 21, use the sensing area 202 that seals and hide this sensor chip 20.
Shown in Fig. 2 E, these sensor chip 20 non-active surfaces of thinning are to this groove 203, so that the conducting wire 21 in this groove 203 exposes to the non-active surface of this sensor chip 20 relatively.
Shown in Fig. 2 F, cut along 20 of this sensor chips respectively, forming the sensor chip that a plurality of sides are formed with conducting wire 21, and this conducting wire 21 is electrically connected to the weld pad 201 of these sensor chip 20 active surfaces.This cutting path is by this light penetrating object 22 and sensor chip 20.
Shown in Fig. 2 G, those sensor chips 20 are connect to place be arrayed and have on the substrate module sheet 30A of a plurality of substrates 30, and make the conductor wire 21 tunnel of this sensor chip 20 be electrically connected to this substrate 30 by electric conducting material 31 just like scolding tin (solder).
Shown in Fig. 2 H, go up 20 fill insulants 33 of corresponding each sensor chip to coat this sensor chip 20 and to expose outside this light penetrating object 22 in this substrate module sheet 30A.
Shown in Fig. 2 I, cut along 30 of this substrates, to form a plurality of semiconductor device of sensing type; Wherein as when should substrate 30 be ball grid array base plate, can be in these substrate 30 surfaces confession connect a side of putting sensor chip 20 and do not plant a plurality of soldered balls (not shown), be electrically connected to external device (ED) for follow-up this semiconductor device of sensing type.
By aforesaid method for making, the present invention discloses a kind of semiconductor device of sensing type again, comprising: substrate 30; Sensor chip 20, have relative active surface and non-active surface, on this active surface, be formed with a sensing area 202 and a plurality of weld pads 201, and be formed with in these sensor chip 20 sides and extend the conducting wire 21 be electrically connected to this weld pad 201, be electrically connected to this substrate 30 by an electric conducting material 31 for the conducting wire 21 of this sensor chip 20; Light penetrating object 22 is formed on the active surface of this sensor chip 20 to hide this sensing area 202; And insulating material 33, coat this sensor chip 20 and expose outside this light penetrating object 22.
In the semiconductor device of sensing type of the present invention, the side of this sensor chip inclined lateral side that its active surface extends out towards non-active surface of serving as reasons, with the structure (plane width is increased downwards gradually by last) that forms section such as trapezoid, therefore this sensor chip is formed at the conducting wire that side and extension are electrically connected to its active surface weld pad, the shape in obtuse angle in the bending place, be difficult for taking place the concentrated junction breakage problem that causes of stress, so can solve the first inclined notch that forms from the wafer back side of semiconductor device that prior art discloses, the metal coiling that makes its vertical section be inverted trapezoidal structure (plane width is shortened gradually by last) this semiconductor device side of causing downwards is acute angle with the extended link junction of chip end face weld pad and contacts, and the concentrated junction breakage problem that causes of stress easily takes place.
Therefore, semiconductor device of sensing type of the present invention and method for making thereof mainly are to include on the wafer of a plurality of sensor chips in one, form a plurality of grooves between the weld pad of corresponding adjacent sensor chip active surface, and in this groove, form to electrically connect the conducting wire of adjacent chips active surface weld pad, the non-active surface of this sensor chip of thinning is to this groove again, so that this conducting wire exposes to this non-active surface relatively, pass wafer and be different from prior art from the non-active surface of chip (wafer back part) formation, be electrically connected to the extended link of chip pad, adhesion layer and indent are to the inclined notch of this glass, form the metal coiling that is electrically connected to extended link in this inclined notch surface and near the cover surface should inclined notch again, to avoid existing semiconductor device side to present inclination corner cut form, thereby the metal coiling that is formed at this semiconductor device side is acute angle with the extended link junction of chip pad and contacts, concentrate and to cause the junction breakage problem and stress easily takes place, and because of forming inclined notch from wafer back part in the existing processing procedure, be difficult for aligning position to correct, cause the notch position skew, cause metal coiling can't be connected, even damage problem such as chip with extended link; Then, the present invention can be along respectively cutting between this sensor chip, to form the sensor chip that a plurality of sides have the conducting wire, again those sensor chips are connect to place and be arrayed and have on the substrate module sheet of a plurality of substrates, and the conducting wire that makes this sensor chip is electrically connected to this substrate, and on this substrate module sheet between corresponding each sensor chip fill insulant to cover this conducting wire, and along between this substrate, cut, to form a plurality of semiconductor device of sensing type, thereby can avoid circuit to expose and be subjected to outside contamination to influence the product reliability, and the follow-up and extraneous integrity problem that electrically connects.
See also Fig. 3 A to Fig. 3 F again, be semiconductor device of sensing type of the present invention and another embodiment schematic diagram of method for making thereof.In the present embodiment in the corresponding previous embodiment same or similar element represent with same-sign, with simplified illustration.
Shown in Fig. 3 A and Fig. 3 B, the one wafer 20A that includes a plurality of sensor chips 20 is provided, this chip has relative active surface and non-active surface, this active surface is provided with sensing area 202 and a plurality of weld pad 201, form a plurality of groove 203A with 201 of weld pads in adjacent sensor chip 20 active surfaces, wherein this groove 203A can be earlier forms V-shape with V-knife, utilizes bottom the previous institute of the perpendicular type cutter cutting v-depression that forms, with the groove 203A of formation as the Y type again.
Shown in Fig. 3 C, in this groove 203A, form conducting wire 21, to electrically connect the weld pad 201 of adjacent sensor chip 20 active surfaces.
Shown in Fig. 3 D, on this sensor chip, connect and put light penetrating object 22 so that this light penetrating object 22 seals and hide this chip sensing area 202.
Multiple these sensor chip 20 non-active surfaces of thinning are to this groove 203A, so that the conducting wire 21 in this groove 203A exposes to the non-active surface of this sensor chip 20 relatively.
Shown in Fig. 3 E, cut along 20 of chips, to form the sensor chip 20 that a plurality of sides are formed with conducting wire 21, and this conducting wire 21 is electrically connected to the weld pad 201 of these sensor chip 20 active surfaces, thereby those sensor chips 20 are connect to place to be arrayed and to have on the substrate module sheet 30A of a plurality of substrates 30, and makes the conducting wire 21 of this sensor chip 20 be electrically connected to this substrate by the electric conducting material 31 just like scolding tin.
Should be specifically noted that in addition, because during the conducting wire 21 of previous these sensor chip 20 sides of formation, this conducting wire 21 is positioned at Y type groove 203A surface, therefore compare the V-type groove 203 of first embodiment, so the side of this sensor chip 20 comprises an inclined lateral side part and a vertical component that is extended out towards non-active surface by active surface in the present embodiment, must be for being electrically connected to substrate 30 with electric conducting material 31 effective combinations have preferable contact-making surface.
Shown in Fig. 3 F, then go up 20 fill insulants 33 of corresponding each sensor chip in this substrate module sheet 30A, coating this sensor chip 20 and to expose outside light penetrating object 22, and cut, to form a plurality of semiconductor device of sensing type along 30 of this substrates.
The foregoing description is illustrative principle of the present invention and effect thereof only, but not is used to limit the present invention, and any those skilled in the art all can be under spirit of the present invention and category, and the foregoing description is modified and changed.Therefore, the scope of the present invention should be foundation with the scope of claims of the present invention.
Claims (12)
1. the method for making of a semiconductor device of sensing type comprises:
One wafer that includes a plurality of sensor chips is provided, and this sensor chip has relative active surface and non-active surface, and this active surface is provided with sensing area and a plurality of weld pad, to form a plurality of grooves between the weld pad of adjacent sensor chip active surface;
In this groove, form the conducting wire, to electrically connect the weld pad of adjacent chips active surface;
On this sensor chip, connect and put light penetrating object to hide this chip sensing area;
The non-active surface of this sensor chip of thinning is to this groove, so that this conducting wire exposes to this non-active surface relatively;
Along respectively cutting between this sensor chip, to form the sensor chip that a plurality of sides are formed with the conducting wire;
Those sensor chips are connect to place be arrayed and have on the substrate module sheet of a plurality of substrates, and make the conducting wire of this sensor chip be electrically connected to this substrate;
In on this substrate module sheet between corresponding each sensor chip fill insulant to coat this sensor chip and to expose outside this light penetrating object; And
Along between this substrate, cut, to form a plurality of semiconductor device of sensing type.
2. semiconductor device of sensing type method for making according to claim 1, wherein, this groove is V-shaped, U-shaped and Y shape wherein one.
3. semiconductor device of sensing type method for making according to claim 1, wherein, this conducting wire is wherein one of titanium/copper/nickel, titanizing tungsten/gold, aluminium/nickel vanadium/copper, titanium/nickel vanadium/copper, titanizing tungsten/nickel, titanium/copper/copper, titanium/copper/copper/nickel.
4. semiconductor device of sensing type method for making according to claim 1, wherein, this light penetrating object is a glass, and connects by an adhesion layer and to place on this chip active surface, uses sealing and hides this chip sensing area.
5. semiconductor device of sensing type method for making according to claim 1, wherein, this substrate surface is formed with a plurality of electrical contacts, and be provided with electric conducting material in this electrical contact, connect by an adhesion layer for this sensor chip and to place on this substrate, and make this this sensor chip be electrically connected to this substrate by this electric conducting material.
6. semiconductor device of sensing type method for making according to claim 1, wherein, this electric conducting material is the pre-soldering tin material of being located on the substrate, and makes this pre-soldering tin material be soldered to the conducting wire of this sensor chip through back welding process, and then makes this sensor chip be electrically connected to this substrate.
7. semiconductor device of sensing type comprises:
Substrate;
Sensor chip, have relative active surface and non-active surface, on this active surface, be formed with a sensing area and a plurality of weld pad, and be formed with in this sensor chip side and extend the conducting wire be electrically connected to this weld pad, be electrically connected to this substrate by an electric conducting material for the conducting wire of this sensor chip;
Light penetrating object is formed on the active surface of this sensor chip to hide this sensing area; And
Insulating material coats this sensor chip and exposes outside this light penetrating object.
8. semiconductor device of sensing type according to claim 7, wherein, this conducting wire is wherein one of titanium/copper/nickel, titanizing tungsten/gold, aluminium/nickel vanadium/copper, titanium/nickel vanadium/copper, titanizing tungsten/nickel, titanium/copper/copper, titanium/copper/copper/nickel.
9. semiconductor device of sensing type according to claim 7, wherein, this light penetrating object is a glass, and connects by an adhesion layer and to place on this chip active surface, uses sealing and hides this chip sensing area.
10. semiconductor device of sensing type according to claim 7, wherein, this substrate surface is formed with a plurality of electrical contacts, and be provided with electric conducting material in this electrical contact, connect by an adhesion layer for this sensor chip and to place on this substrate, and make this this sensor chip be electrically connected to this substrate by this electric conducting material.
11. semiconductor device of sensing type according to claim 7, wherein, the side of this sensor chip inclined lateral side that its active surface extends out towards non-active surface of serving as reasons.
12. semiconductor device of sensing type according to claim 7, wherein, this sensor chip side comprises an inclined lateral side part and a vertical component that is extended out towards non-active surface by active surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100860135A CN101261942A (en) | 2007-03-07 | 2007-03-07 | Sensing semiconductor and its making method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100860135A CN101261942A (en) | 2007-03-07 | 2007-03-07 | Sensing semiconductor and its making method |
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| Publication Number | Publication Date |
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| CN101261942A true CN101261942A (en) | 2008-09-10 |
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| CNA2007100860135A Pending CN101261942A (en) | 2007-03-07 | 2007-03-07 | Sensing semiconductor and its making method |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102683548A (en) * | 2011-03-18 | 2012-09-19 | 隆达电子股份有限公司 | Semiconductor assembly |
| CN104520935A (en) * | 2012-04-18 | 2015-04-15 | 巴布科克和威尔科克斯M能量股份有限公司 | Incore instrumentation cable routing for pressurized water reactor |
| CN111341728A (en) * | 2018-12-19 | 2020-06-26 | 夏泰鑫半导体(青岛)有限公司 | Semiconductor device and method for manufacturing the same |
-
2007
- 2007-03-07 CN CNA2007100860135A patent/CN101261942A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102683548A (en) * | 2011-03-18 | 2012-09-19 | 隆达电子股份有限公司 | Semiconductor assembly |
| CN104520935A (en) * | 2012-04-18 | 2015-04-15 | 巴布科克和威尔科克斯M能量股份有限公司 | Incore instrumentation cable routing for pressurized water reactor |
| CN111341728A (en) * | 2018-12-19 | 2020-06-26 | 夏泰鑫半导体(青岛)有限公司 | Semiconductor device and method for manufacturing the same |
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