CN101256361B - Light blocking agent - Google Patents
Light blocking agent Download PDFInfo
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- CN101256361B CN101256361B CN2007100796069A CN200710079606A CN101256361B CN 101256361 B CN101256361 B CN 101256361B CN 2007100796069 A CN2007100796069 A CN 2007100796069A CN 200710079606 A CN200710079606 A CN 200710079606A CN 101256361 B CN101256361 B CN 101256361B
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Abstract
The present invention discloses a photoresistive agent, which is composed of a new negative photoresistor, the main compositions are as follows: macromolecule resin containing unsaturated ethylene or methyl vinyl, paint, photosensitive initiator, monomer, solvent and additive; the macromolecule resin containing unsaturated ethylene or methyl vinyl is formed by the polymerization of a primary monomer and a secondary monomer. The primary monomer can be selected from cyclohexyl methacrylate, cyclohexyl acrylic, isobornean ester methacrylate or isobornean ester acrylic; and the secondary monomer can be acryl monomer.
Description
Technical field
The relevant a kind of photoresist of the present invention is used and is obtained a kind of effective lifting thermal stability after back residual film ratio and the film forming of developing.
Background technology
For making used minute circuit pattern in LCD (LCD) circuit or the SIC (semiconductor integrated circuit), on insulator layer on the substrate or conductive metal layer, evenly cover or apply a kind of fluoropolymer resin that comprises, the photoresistance composition of Photoactive compounds and solvent, the substrate that covers or apply bakes with evaporating solvent through temperature, the substrate that temperature baked selectively is exposed to the radiation such as the ultraviolet ray of some pattern, electronics or X-ray, expect pattern through develop producing with metacoxal plate, the substrate that develops removes insulator layer or conductive metal layer with etching again, and removes remaining photoresist layer and transfer on substrate surface to finish micro pattern.
Photoresist is resolvent being called " eurymeric photoresistance " after exposure (UV light), otherwise, what can harden polymerization after the exposure then is " minus photoresistance ", the chromatic photoresist agent is a kind of of minus photoresist, be that with the maximum difference of general photoresist (as the IC photoresist) the chromatic photoresist agent added the composition of pigment, also being the source that forms form and aspect, also is the critical material of LCD flat-panel screens colorize; Again, minus photoresistance micro-photographing process mainly includes: (1) substrate cleaning (Substrate Clean)=(2) coatings (Coating)=(3) drying under reduced pressure (Vacuum Dry)=(4) soft roasting (pre-baking)=(5) exposures (exposure)=(6) developments (Developing)=(7) firmly roasting steps such as (Post-baking).The technical difference of chromatic photoresist agent except can considering from coating characteristics and photoresistance and substrate attachment two aspects, also must be able to meet the demand in high resolving power field.
In the middle of existing known techniques field, though U.S. US5847015 patent documentation, US5232634 patent documentation, US6432614 patent documentation, US6348298 patent documentation have disclosed the colored photo etching (minus photoresist) of heterogeneity; Again, the characteristic of chromatic photoresist: characteristic such as thermal stability will directly influence the quality and the production capacity of colored filter after develop back residual film ratio and the film forming; Because general potpourri and the character that can't be easily should possess by the structure precognition institute of single component, though so the above-mentioned known only change of some microcomponents of various minus photoresists, can produce distinct character, also all have specific suitable application area; Therefore how at the purposes demand of reality, correlation properties at chromatic photoresist are improved and must be had the constituent structure of approximate character through constantly becoming different gradually, exploration may have the structure of required characteristic, and then determines whether the character of each composition can make the realistic purposes demand of final chromatic photoresist.
Summary of the invention
In view of this, the present invention aims to provide a kind of thermal stability minus photoresist behind the residual film ratio and film forming of obtaining behind the excellent developing.
When implementing, the principal ingredient of minus photoresist is: contains insatiable hunger and closes the macromolecule resin of vinyl or methyl ethylene (Resin), pigment (Pigment), sensitization initiator (Photoinitiator), monomer (Monomer), solvent (Solvent), and adjuvant (Additives); Wherein, contain insatiable hunger and close necessity combination that the macromolecule resin of vinyl or methyl ethylene, sensitization initiator, monomer and solvent are photoresist, pigment and adjuvant can mix or not mix in the photoresist prescription then according to the practical use allotment.Contain insatiable hunger and close the macromolecule resin of vinyl or methyl ethylene and comprise insatiable hunger at least and close vinyl or methyl ethylene, and be polymerized by main monomer, inferior monomer.Wherein, main monomer can be in cyclohexyl methacrylate (Cyclohexylmethacrylate), cyclohexyl acrylate (Cyclohexyl acrylate), the different Borneo of methacrylic acid ester (Isobomyl methacrylate), the different Borneo of the acrylic acid ester (Isobomyl acrylate) combination of any or above main monomer; Inferior monomer can be the acryl monomer, for example: in methyl methacrylate (Methyl methacrylate), methacrylic acid (Methacrylic acid), methyl acrylate (Methyl acrylate), acrylic acid (the skilful lic acid of Ac), methacrylic acid benzene methyl (the skilful late of Benzylmethac), butyl methacrylate (Butyl methacrylate), the 2-ethyl hexyl acrylate (Octylacrylate) etc. any, or with the combination of monomer last time.After treating main monomer and time monomer polymerization, row imports insatiable hunger and closes vinyl or methyl ethylene and finish this and contain the macromolecule resin that vinyl or methyl ethylene are closed in insatiable hunger again.
Embodiment
For making your juror know major technique content of the present invention, and embodiment, be described as follows now:
Minus photoresist of the present invention, mainly close the macromolecule resin of vinyl or methyl ethylene, pigment, sensitization initiator, monomer, solvent by containing insatiable hunger, and adjuvant is formed, obtain thermal stability and high-resolution image after residual film ratio behind the excellent developing, the film forming for a kind of, and then can be applied in the high resolving power minus photoresist of high resolving power demand.Wherein, containing insatiable hunger closes the function of the macromolecule resin of vinyl or methyl ethylene and is tack, development, pigment-dispersing, flowability, thermotolerance, endurance, analytic ability; The function of pigment is painted and colorization; The function of sensitization initiator is sensitometric characteristic, analytic ability; The function of monomer is tack, development, analytic ability; The function of solvent is viscosity and coating character; The function of adjuvant then is coating, levelability and foamability.Wherein, contain insatiable hunger and close necessity combination that the macromolecule resin of vinyl or methyl ethylene, sensitization initiator, monomer and solvent are photoresist, pigment and adjuvant can mix or not mix in the photoresist prescription then according to the practical use allotment.
Contain insatiable hunger and close the macromolecule resin of vinyl or methyl ethylene and comprise insatiable hunger at least and close vinyl or methyl ethylene, and be polymerized by main monomer, inferior monomer.Wherein, main monomer can be in cyclohexyl methacrylate (Cyclohexyl methacrylate), cyclohexyl acrylate (Cyclohexyl acrylate), the different Borneo of methacrylic acid ester (Isobomyl methacrylate), the different Borneo of the acrylic acid ester (Isobornyl acrylate) combination of any or above main monomer; Inferior monomer can be the acryl monomer, for example: in methyl methacrylate (Methyl methacrylate), methacrylic acid (Methacrylic acid), methyl acrylate (Methyl acrylate), acrylic acid (Acrylic acid), methacrylic acid benzene methyl (Benzyl methacrylate), butyl methacrylate (Butyl methacrylate), the 2-ethyl hexyl acrylate (Octyl acrylate) etc. any, or with the combination of monomer last time.After treating main monomer and time monomer polymerization, row imports insatiable hunger and closes vinyl or methyl ethylene and finish this and contain the macromolecule resin that vinyl or methyl ethylene are closed in insatiable hunger again.
Wherein, main monomer, the structural formula of cyclohexyl methacrylate (Cyclohexyl methacrylate) and cyclohexyl acrylate (Cyclohexyl acrylate) is as follows:
If R is methyl (methyl), then be cyclohexyl methacrylate (Cyclohexylmethacrylate); If R is hydrogen (Hydrogen), then be cyclohexyl acrylate (Cyclohexylacrylate).
Main monomer, the structural formula of the different Borneo of methacrylic acid ester (Isobomyl methacrylate) and the different Borneo of acrylic acid ester (Isobomyl acrylate) is as follows:
If R1 is methyl (methyl), then be the different Borneo of methacrylic acid ester (Isobomylmethacrylate); If R1 is hydrogen (Hydrogen), then be the different Borneo of acrylic acid ester (Isobomylacrylate).
Wherein, this contains insatiable hunger, and to close the molar percentage scope that the macromolecule resin of vinyl or methyl ethylene comprises main monomer be 15% to 50%, is preferably 20% to 40%; The molar percentage scope of inferior monomer is 20% to 50%, is preferably 30% to 50%; And insatiable hunger to close the molar percentage scope of vinyl or methyl ethylene be 2% to 20%, be preferably 10% to 20%.The weight percentage ranges of macromolecule resin in photoresistance can be 2% to 15%, is preferably 3% to 10%.
Pigment can optionally be CI pigment yellow (1,3,11,12,13,14,15,16,17,20,24,31,53,55,60,61,65,71,73,74,81,83,93,95,97,98,99,100,101,104,106,108,109,110,113,114,116,117,119,120,126,127,129,138,139,150,151,152,153,154,155,156,166,167,168,175), CI pigment orange (1,5,13,14,16,17,24,34,36,38,40,43,46,49,51,61,63,64,71,73), CI paratonere (1,2,3,4,5,6,7,8,9,10,11,12,14,15,16,17,18,19,21,22,23,30,31,32,37,38,40,41,42,48:1,48:2,48:3,48:4,49:1,49:2,50:1,52:1,53:1,57,57:1,57:2,58:2,58:4,60:1,63:1,63:2,64:1,81:1,83,88,90:1,97,101,102,104,105,106,108,112,113,114,122,123,144,146,149,150,151,155,166,168,170,171,172,174,175,176,177,178,179,180,185,187,188,190,193,194,202,206,207,208,209,215,216,220,224,226,242,243,245,254,264,265), CI pigment violet (1,19,23,29,32,36,38,39), the CI alizarol saphirol (1,2,15,15:3,15:4,15:6,16,22,60,66), CI naphthol green (7,36,37), CI pigment brown (23,25,28), inorganic pigment of CI pigment black (1,7) (metal oxide or metal misfit thing) or organic pigment, or with any mixing of paint, but not as limit.The weight percentage ranges of pigment in photoresistance can be 2% to 15%.
Monomer can be the acryl monomer, DIPENTAERYTHRITOLHEXAACRYLATE (six acetate diisoamyl tetrols) for example, or with water-insoluble and water-soluble monomer differentiation, wherein, water-insoluble monomer (water-insoluble Monomer) can be PENTAERYTHRITOL TRIACRYLATE (penta erythritol triacrylate), T XI METHYLOLPROPANE TRIACRYLATE (trimethyl ether propane triacrylate), TRIMETHYLOLPROPANE TRIMETHACRYLATE (trimethyl ether propane trimethyl acrylic ester), TRIS (2-HYDROXY ETHYL) ISOCYANURATETRIACRYLATE) (three, two-ethanol isocyanates triacrylate), (DI-TRIMETHYLOLPROPANE TETRAACRYLATE (two, the trihydroxymethyl propane tetraacrylate), DIPENTAERYTHRITOL PENTAACRYLATE (diisoamyl tetrol five acrylate), PENTAACRYLATE ESTER (five acrylate), PENTAERYTHRITOL TETRAACRYLATE) (tetraacethyl isoamyl tetrol); DIHEXAERYTHRITOL HEXAACRYLATE (six acetate, two own tetrols), DIPENTAERYTHRITOL HEXAACRYLATE (six acetate diisoamyl tetrols), or be
Muti-function Monomer (multiple functional radical monomer), Dendritic/Hyper-branchedacrylateoligomers (tree-shaped/the many clumps of few bodies of a small bundle of straw, etc. for silkworms to spin cocoons on acrylate), Hyper-branched polyesteracrylates (many clumps of a small bundle of straw, etc. for silkworms to spin cocoons on polyether acrylates), Uremane acrylates (aethylis carbamas).
Water-soluble monomer (water-soluble monomer) then can be the monomer (monomer) of Ethoxylated (polyoxyethylene) (being called for short EO) base and Propoxylated (polyoxypropylene) (being called for short PO) base; For example be: 2 (2-ETHOXYETHOXY) ETHYL ACRYLATE (two-(two-oxygen ethylene oxy ethene) vinylacrylic acid esters, ETHOXYLATED (15) TRIMETHYLOLPROPANE TRIACRYLATE (15 polyoxyethylene trihydroxymethyl propane triacrylate), ETHOXYLATED (30) BISPHENOLADIACRYLATE (30 oxygen ethene two, two-biconjugate phenol methane diacrylate), ETHOXYLATED (30) BISPHENOLADIMETHACRYLATE (30 oxygen ethene two, two-biconjugate phenol dimethylamino methane base acrylate), ETHOXYLATED (20) TRIMETHYLOLPROPANETRIACRYLATE (20 oxygen ethene trihydroxymethyl propane triacrylates), METHOXYPOLYETHYLENE GLYCOL (350) MONOMETHACRYLATE (15 oxygen ethene trihydroxymethyl propane triacrylates), METHOXYPOLYETHYLENEGLYCOL (550) MONOMETHACRYLATE (550 oxygen ethene of methyl oxygen monomethacrylates), POLYETHYLENE GLYCOL (200) DIACRYLATE (200 oxygen ethene diacrylates), POLYETHYLENEGLYCOL (400) DIACRYLATE (400 oxygen ethene diacrylates), POLYETHYLENE GLYCOL (400) DIMETHACRYLATE (400 oxygen ethene dimethylacrylates), POLYETHYLENE GLYCOL (600) DIACRYLATE (600 oxygen ethene diacrylates), POLYETHYLENEGLYCOL (600) DIMETHACRYLATE (600 oxygen ethene dimethylacrylates), POLYPROPYLENE GLYCOLMONOMETHACRYLATE (polyoxypropylene monomethacrylates), its general molecular formula is as follows:
X, y, z numerical value can be by more than 0 to 600 or 600, and x+y+z ≠ 0.
Certainly also can add two or more monomers and be mixed into common monomer (co-monomer).Especially, it is good that employed monomer (Monomer) mixes water-insoluble monomer with water-soluble monomer, proportional range: water-insoluble monomers/water soluble monomers=95:5 to 5:95.Monomer or the common weight percentage ranges of monomer in photoresistance can be 2% to 10%.
Sensitization initiator (Photo initiator), can be selected from acetophenone based compound (acetophenone), benzophenone (Benzophenone) based compound or diimidazole based compound (bis-imidazole), or above sensitization initiator mixes arbitrarily, but not as limit.The weight percentage ranges of sensitization initiator in photoresistance can be 1% to 10%.
Solvent (Solvent) can be glycol propyl ether (ethylene glycol monopropylether), diethylene glycol dimethyl ether (di-ethylene glycol dimethyl ether), tetrahydrofuran, ethylene glycol monomethyl ether (ethylene glycol monomethyl ether), ethylene glycol ethyl ether (ethyleneglycol monoethyl ether), diethylene glycol monomethyl ether (di-ethylene glycol mono-methylether), carbitol (di-ethylene glycol mono-ethyl ether), butylcarbitol (di-ethylene glycol mono-bmyl ether), 1-Methoxy-2-propyl acetate (propylene glycol mono-methyl ether acetme), propylene-glycol ethyl ether acetate (propylene glycol mono-ethyl ether acetate), propylene glycol propyl ether acetate (p sun pylene glycol mono-propyl ether acetate), 3-ethoxyl ethyl propionate (ethyl 3-ethoxy propionate) etc., or above solvent mixes arbitrarily, but not as limit.The weight percentage ranges of solvent in photoresistance can be 42% to 88%.
Adjuvant is generally pigment dispersing agent, this be contain pigment photoresistance the essential composition that adds, be generally non-ionic interfacial agent, for example as: Solsperse39000, Solsperse21000, the weight percentage ranges of this spreading agent in photoresistance can be 1% to 14%.
Specific embodiment is as described below, yet, be not to limit to the present invention with this.
Macromolecule resin adopts following composition, and is listed as table 1:
The composition of table 1 macromolecule resin
Wherein, relatively resin 1 does not contain functional group's insatiable hunger and closes vinyl or methyl ethylene, does not contain main monomer yet and only has and contain time monomer; Embodiment resin 2 contains functional group's insatiable hunger and closes methyl ethylene, main monomer cyclohexyl methacrylate and time monomer; Embodiment resin 3 contains functional group's insatiable hunger and closes methyl ethylene, main monomer cyclohexyl methacrylate and the different Borneo of methacrylic acid ester, and inferior monomer.
With above-mentioned macromolecule resin: relatively resin 1, embodiment resin 2 and embodiment resin 3 collocation pigment, pigment dispersing agent, monomer, sensitization initiator and solvent, it is listed to be modulated into photoresistance prescription such as table 2:
Table 2 photoresistance prescription
Relatively fill a prescription 1, Example formulations 2 and Example formulations 3 have identical pigment, pigment dispersing agent, monomer, sensitization initiator and solvent composition.Wherein, relatively filling a prescription 1, is macromolecule resin to compare resin 1; Example formulations 2 is a macromolecule resin with embodiment resin 2; Example formulations 3 is a macromolecule resin with embodiment resin 3.
With above-mentionedly relatively fill a prescription 1, Example formulations 2 and Example formulations 3 are developed heat stability testing after back residual film ratio and the film forming, result such as table 3 are listed:
Table 3 test result
The photoresistance prescription | Relatively fill a prescription 1 | Example formulations 2 | Example formulations 3 |
Back residual film ratio (%) develops | 87% | 95% | 98% |
Thermal stability film crumple rate after the film forming (%, at230 ℃, 60min) | 70% | 75% | 79% |
Aggregate performance | Bad | Excellent | Excellent |
Wherein, (Spin Coating, 400rpm) mode are coated on the 100x100x0.7mm glass substrate, through preceding baking (Pre-baking:100 ℃ of x1min), exposure (UV GHI line, 100mJ/cm with rotary coating with each prescription
2), after develop (new Ying Cai company makes for developer solution flushing substrate 60sec, developer solution: DEV-K100), the heat roasting (230 ℃ of x60min), carry out test result.Method of testing is as follows: the back residual film ratio %=that develops (the original thickness before the residual film thickness/development behind the developer solution flushing 60sec) x100%; Thermal stability (film crumple rate %, at230 ℃, 60min)=(the roasting back of heat thickness/developments be thickness afterwards) x100%.
The test result of table 3 shows, Example formulations 2 and Example formulations 3 have residual film ratio after the good development, after the development of Example formulations 2 and Example formulations 3 residual film ratio up to 95% and 98%, be better than relatively filling a prescription 1 87%; Thermal stability aspect after film forming, the thermal stability of Example formulations 2 and Example formulations 3 be up to 75% and 79%, be better than relatively filling a prescription 1 70%; Therefore in the aggregate performance aspect, Example formulations 2 and Example formulations 3 be for having the minus photoresist of thermal stability after develop back residual film ratio and the film forming, and 1 the prescription of being better than relatively filling a prescription is formed.
As mentioned above, the invention provides a kind of minus photoresist of obtaining thermal stability after develop back residual film ratio and the film forming, the application of patent of invention is offered in the whence in accordance with the law; Yet, above implementation and graphic shown in, be preferred embodiment of the present invention, be not to limit to the present invention with this, be with, approximate with structure of the present invention, device, feature etc. such as, identical person all should belong to of the present invention founding within purpose and the claim.
Claims (11)
1. a photoresist is made up of following composition: contain the macromolecule resin of unsaturated ethylene thiazolinyl or methyl ethylene, 2% to 15% percentage by weight; Pigment, 2% to 15% percentage by weight; The sensitization initiator, 1% to 10% percentage by weight; The acrylic monomer, 2% to 10% percentage by weight; Solvent, 42% to 88% percentage by weight; Adjuvant, 1% to 14% percentage by weight; This macromolecule resin that contains unsaturated ethylene thiazolinyl or methyl ethylene is by behind main monomer and time monomer polymerization, row imports that vinyl or methyl ethylene are closed in insatiable hunger and polymerization forms again, main monomer wherein, the content of inferior monomer and unsaturated ethylene thiazolinyl or methyl ethylene is respectively time monomer 30-50 molar percentage, main monomer 40-50 molar percentage, and unsaturated ethylene thiazolinyl or methyl ethylene 2-20 molar percentage, this main monomer is for being selected from cyclohexyl methacrylate, cyclohexyl acrylate, isobornyl methacrylate, the combination of any or above main monomer in the isobornyl acrylate; This time monomer is selected from methyl methacrylate, methacrylic acid, methyl acrylate, acrylic acid, methacrylic acid benzene methyl, butyl methacrylate, the 2-ethyl hexyl acrylate any, or with the combination of monomer last time.
2. photoresist as claimed in claim 1, this pigment is any of the inorganic pigment of CI pigment yellow, CI pigment orange, CI paratonere, CI pigment violet, CI alizarol saphirol, CI naphthol green, CI pigment brown, CI pigment black or organic pigment, or with any mixing of paint.
3. photoresist as claimed in claim 1, this adjuvant are pigment dispersing agent.
4. photoresist as claimed in claim 1, this adjuvant are non-ionic interfacial agent.
5. photoresist as claimed in claim 1, this acrylic monomer is a water-soluble monomer.
6. photoresist as claimed in claim 1, this acrylic monomer is water-insoluble monomer.
7. photoresist as claimed in claim 1, this acrylic monomer is mixed with water-insoluble monomer by water-soluble monomer.
8. photoresist as claimed in claim 7, this water-soluble monomer are 5% to 95% percentage by weight in the acrylic monomer.
9. photoresist as claimed in claim 7, this water-insoluble monomer are 5% to 95% percentage by weight in the acrylic monomer.
10. photoresist as claimed in claim 1, this sensitization initiator be I linear light initiator, acetophenone based compound, benzophenone based compound or diimidazole based compound any or with any mixing of glazing initiator.
11. being any or above solvent of glycol propyl ether, diethylene glycol dimethyl ether, tetrahydrofuran, ethylene glycol monomethyl ether, ethylene glycol ethyl ether, diethylene glycol monomethyl ether, carbitol, butylcarbitol, 1-Methoxy-2-propyl acetate, propylene-glycol ethyl ether acetate, propylene glycol propyl ether acetate, 3-ethoxyl ethyl propionate, photoresist as claimed in claim 1, this solvent mix arbitrarily.
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US20110039206A1 (en) * | 2009-05-20 | 2011-02-17 | Rohm And Haas Electronic Materials Llc | Novel resins and photoresist compositions comprising same |
CN104252100B (en) * | 2013-06-26 | 2019-06-18 | 新应材股份有限公司 | Photocurable constituent and its application |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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US20020090573A1 (en) * | 2000-11-17 | 2002-07-11 | Naoya Yabuuchi | Photosolder resist composition |
CN1509424A (en) * | 2002-02-18 | 2004-06-30 | ������ʱ����ʽ���� | Radiation-sensitive resin composition |
JP2004325734A (en) * | 2003-04-24 | 2004-11-18 | Toppan Printing Co Ltd | Light shielding black resist composition |
CN1873534A (en) * | 2005-06-04 | 2006-12-06 | 三星电子株式会社 | Photosensitive resin composition, method of manufacturing a thin-film transistor substrate, and method of manufacturing a common electrode substrate using the same |
CN1885163A (en) * | 2005-06-23 | 2006-12-27 | Adms技术株式会社 | Negative resist composition |
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Publication number | Priority date | Publication date | Assignee | Title |
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US20020090573A1 (en) * | 2000-11-17 | 2002-07-11 | Naoya Yabuuchi | Photosolder resist composition |
CN1509424A (en) * | 2002-02-18 | 2004-06-30 | ������ʱ����ʽ���� | Radiation-sensitive resin composition |
JP2004325734A (en) * | 2003-04-24 | 2004-11-18 | Toppan Printing Co Ltd | Light shielding black resist composition |
CN1873534A (en) * | 2005-06-04 | 2006-12-06 | 三星电子株式会社 | Photosensitive resin composition, method of manufacturing a thin-film transistor substrate, and method of manufacturing a common electrode substrate using the same |
CN1885163A (en) * | 2005-06-23 | 2006-12-27 | Adms技术株式会社 | Negative resist composition |
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