CN101256353B - Photolithography thin film evoked by probe and preparation method thereof - Google Patents
Photolithography thin film evoked by probe and preparation method thereof Download PDFInfo
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- CN101256353B CN101256353B CN200810035321XA CN200810035321A CN101256353B CN 101256353 B CN101256353 B CN 101256353B CN 200810035321X A CN200810035321X A CN 200810035321XA CN 200810035321 A CN200810035321 A CN 200810035321A CN 101256353 B CN101256353 B CN 101256353B
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Abstract
The invention relates to a probe inducing photoetching film for probe inducing surface plasma resonance photoetching and the preparation thereof. The structure of the probe inducing photoetching film is composed of a direct-writing photoetching material layer deposited on a glass substrate, a medium layer and a surface plasma resonance layer. The direct-writing photoetching material layer is composed of AgOx or NiOy; the medium layer is composed of SiO2; and the surface plasma resonance layer is composed of Ag. The film is prepared by magnetron sputtering. When the probe inducing photoetchingfilm is used for probe inducing surface plasma resonance photoetching, the corrosion linewidth is greatly reduced.
Description
Technical field
The present invention relates to technical field of lithography, is a kind of photolithography thin film evoked by probe and preparation method thereof, is used for the photolithography thin film evoked by probe of probe-induced surface plasma resonance photoetching, can reduce the etching live width greatly.
Background technology
The electronics chemical materials is a basic material crucial in the electronics industry, and the demand for development electronics chemical materials of electronics industry is synchronized development with it, brings in constant renewal in and regenerates, to adapt to the needs that it is constantly weeded out the old and bring forth the new at technical elements.Particularly at integrated circuit connection, its development has benefited from the continuous progress of Micrometer-Nanometer Processing Technology, especially optical lithography techniques fully.
The general in the world lithographic dimensioned method of dwindling reduces to inscribe light wavelength exactly at present, developed into now and used profound ultraviolet light (193nm), even gamma-rays is as the photoetching light source of microcircuit.This class art lithography systems complexity costs an arm and a leg.Another approach that does not shorten wavelength and dwindle spot size is a near field optics.Adopt the SNOM optical fiber probe of logical light, adopt traditional substrate/photoresist structure, can obtain to surpass the lithographic line width of optical diffraction limit (super-resolution) to following (the Eric Betzig of 100nm, Jay K.Trautman, Near-Field Optics:Microscopy, Spectroscopy, and Surface Modification Beyond the Diffaction Limit, SCIENCE, 1992,257:193).Want further to dwindle live width, the size of optical fiber light hole must further reduce, but this can sharply reduce laser energy, is difficult to practicality.In addition; the ultra-resolution near-field structure photoetching technique can produce the near field of light coupling that surpasses diffraction limit by mask layer and realize quick photoetching; adopt the film layer structure of substrate/mask layer/photoresist or substrate/protective seam/mask layer/protective seam/photoresist; by mask material generation photo-thermal perforate effect under the laser beam effect; chemolysis waits the hot spot that obtains nanoscale; and multi-layer film structure inner realize the super-resolution near-field etching (Masashi Kuwahara etc.Less than 0.1 μ m linewith fabrication by visible light usingsuper-resolution near-field structure.Microelectronic Engineering.2001,57-58:883-890.).But, this Technology Need is by the dynamic super-resolution effect in the sample high speed rotating process, and the super-resolution effect that will obtain need adopt noble metal (as platinum) and sandwich construction (what have at present reaches 9 layers), and complex manufacturing technology, cost costliness are difficult to flexible Application.
Summary of the invention
The problem to be solved in the present invention is a kind of photolithography thin film evoked by probe that is used for the probe-induced surface plasma resonance photoetching and preparation method thereof is provided, and is used for the probe-induced surface plasma resonance photoetching, to reduce lithographic line width greatly.
Technical solution of the present invention is:
A kind of photolithography thin film evoked by probe that is used for the probe-induced surface plasma resonance photoetching, be characterised in that its structure is made up of the direct-write photoetching material layer, dielectric layer and the surface plasmon resonance layer that are deposited on the substrate of glass, described direct-write photoetching material layer is by AgO
xOr NiO
yForm; Described dielectric layer is by SiO
2Form; Described surface plasmon resonance layer is made up of Ag.
The AgO of described direct-write photoetching material layer
x, x≤1 wherein is by the control O that magnetron sputtering adopted
2: the Ar gas flow is recently realized, AgO
xComposition be Ag, AgO and Ag
2The potpourri of O.
The NiO of described direct-write photoetching material layer
y, y≤3/2 wherein is the O during by the control magnetron sputtering
2: the Ar gas flow realizes that recently its composition is NiO and Ni
2O
3Potpourri.
The thickness of described direct-write photoetching material layer is 10-100nm.
The thickness of described dielectric layer is 10-80nm.
The thickness of described surface plasmon resonance layer is 20-100nm.
The preparation method of above-mentioned photolithography thin film evoked by probe adopts the method preparation of magnetron sputtering, and the sputter operating air pressure is better than 1.0 * 10
-3Pa adopts d.c. sputtering, radio-frequency sputtering and reactive d.c. sputtering to be coated with in the glass of high refractive index substrate respectively: surface plasmon resonance layer, dielectric layer and direct-write photoetching material layer, the wherein AgO of direct-write photoetching material layer successively
x, x≤1 is by the control O that magnetron sputtering adopted
2: the Ar gas flow is recently realized, AgO
xComposition be Ag, AgO and Ag
2The potpourri of O; The NiO of described direct-write photoetching material layer
y, y≤3/2 is by the O of control during magnetron sputtering
2: the Ar gas flow realizes that recently its composition is NiO and Ni
2O
3Potpourri.
Technique effect of the present invention:
Compare with technology formerly, the present invention is because the existence of surface plasmon resonance layer, the interface of dielectric layer and surface plasmon resonance layer can produce the surface plasma body resonant vibration enhanced field, and the evanescent wave that can utilize probe guiding resonance to strengthen produces photoetching point (line) on the direct-write photoetching material layer.Because photoetching point (line) size depends on the probe tip size, therefore be easy to directly write the photoetching point (line) that produces nanoscale (less than 100nm) at the photoetching material laminar surface.Used probe only plays the effect of guiding light wave, need not logical light, has overcome formerly and has led to the shortcoming that light optical fiber probe laser energy reduces in the technology.Realize that by traveling probe and light-beam position arbitrary graphic directly carves, overcome the shortcoming that ultra-resolution near-field structure in the technology formerly needs dynamic rotary sample.
Description of drawings
Fig. 1 is the structural representation of photolithography thin film evoked by probe of the present invention
Fig. 2 is the recording principle synoptic diagram that the present invention is used for the evoked by probe photoetching
Fig. 3 is the experimental result that photolithography thin film evoked by probe of the present invention is used for the evoked by probe photoetching
Embodiment
The invention will be further described below in conjunction with embodiment and accompanying drawing, but should not limit protection scope of the present invention with this.
See also Fig. 1 earlier, Fig. 1 is the structural representation of photolithography thin film evoked by probe of the present invention, as seen from the figure, the structure of photolithography thin film evoked by probe of the present invention is made up of the direct-write photoetching material layer 1, dielectric layer 2 and the surface plasmon resonance layer 3 that are deposited on the substrate of glass 4, and described direct-write photoetching material layer is by AgO
xOr NiO
yForm; Described dielectric layer is by SiO
2Form; Described surface plasmon resonance layer is made up of Ag.
Direct-write photoetching material layer 1 is the AgO of 10-100nm by thickness
xOr NiO
xForm; Dielectric layer 2 is the SiO of 10-80nm by thickness
2Form; Surface plasmon resonance layer 3 is that the Ag of 20-100nm forms by thickness; Substrate 4 is the glass of high refractive index of 1mm for thickness.
The dielectric material that described direct-write photoetching material layer 1 can be etched when being metal probe and the interaction of laser evanescent wave; Described dielectric layer 2 plays two effects: the one, and belong to layer with surface plasma resonance gold and form the thin condition of light so that excite the plasma of metal surface; The 2nd, protection direct-write photoetching material layer is avoided the influence of incident laser; Described surface plasmon resonance layer 3 can produce surface plasma-wave under laser incident condition, when this vibration frequency in medium of the vibration frequency of metal surface plasma ripple and incident laser is identical, surface plasma body resonant vibration just takes place, incident laser all is present on the interface that surface plasma resonance gold belongs to layer/dielectric layer with the form of evanescent wave so, for the evoked by probe of back creates conditions.
The preparation process of photolithography thin film evoked by probe is as follows: (the sputter operating air pressure is better than 1.0 * 10 to the method for employing magnetron sputtering
-3Pa), on being the glass of high refractive index substrate 4 of 1mm, thickness adopt d.c. sputtering, radio-frequency sputtering and reactive d.c. sputtering to be coated with successively: surface plasmon resonance layer 3, dielectric layer 2 and direct-write photoetching material layer 1.Direct-write photoetching material layer AgO wherein
xThe O that (x≤1) is adopted during magnetron sputtering by control
2: the Ar gas flow realizes that recently its composition generally is by Ag, AgO and Ag
2The potpourri of O is formed; NiO
x(x≤3/2) also is by the O of control during magnetron sputtering
2: the Ar gas flow realizes that recently its composition generally is by NiO and Ni
2O
3Potpourri form.
Fig. 2 is the recording principle synoptic diagram that the present invention is used for the evoked by probe photoetching, and laser 5 is concentrated on the recording layer by focus lamp, adopts a photodetector detection of reflected light intensity simultaneously.According to the total internal reflection principle of Kretschmann structure, as incident angle θ
iIncrease to certain value (this value is relevant with the refractive index and the thickness of metal level, dielectric layer), surface plasma body resonant vibration can take place, show as the unexpected decline of reflectivity, produce evanescent wave at metal level/dielectric layer on the interface simultaneously, it is the electromagnetic wave that is exponential decay in vertical direction.When probe enters evanscent field, the evanescent wave energy leaks along needle point, and the needle point place produces local fields and strengthens, promptly obtain high recording power at the needle point place, can be used for the recording layer adjacent with probe carried out auxiliary heating, make it to decompose, realize extra small recorded bit nano-photoetching.
The simulated experiment of evoked by probe photoetching, when adopting Finite-Difference Time-Domain Method that the above-mentioned material structure is carried out simulated experiment, find, the local fields enhancement effect at probe tip place is very obvious, the contrast maximum of the relative electric field intensity amplitude on recording layer surface, and experimental result is as shown in Figure 3.Probe can form the record hot spot of needle point size on the recording layer surface, demonstrates its feasibility aspect the photoetching of near field.
In theory, the measuring point size that produced of interacting between near field probe and the recording layer depends on the size of probe tip, but cause reflection of light and scattering might make measuring point be slightly larger than the needle point size because needlepoint form is irregular, in view of present needle point can be accomplished atom level, be feasible so produce the measuring point of nanoscale (less than 100nm).
Claims (5)
1. photolithography thin film evoked by probe that is used for the probe-induced surface plasma resonance photoetching, be characterised in that its structure is made up of the surface plasmon resonance layer (3), dielectric layer (2) and the direct-write photoetching material layer (1) that are deposited on the substrate of glass (4), described direct-write photoetching material layer is by AgO
xOr NiO
yForm; Described dielectric layer is by SiO
2Form; Described surface plasmon resonance layer is made up of Ag; The AgO of described direct-write photoetching material layer
x, x≤1 wherein is by the control O that magnetron sputtering adopted
2: the Ar gas flow is recently realized, AgO
xComposition be Ag, AgO and Ag
2The potpourri of O; The NiO of described direct-write photoetching material layer
y, y≤3/2 wherein is the O during by the control magnetron sputtering
2: the Ar gas flow realizes that recently its composition is NiO and Ni
2O
3Potpourri.
2. photolithography thin film evoked by probe according to claim 1, the thickness that it is characterized in that described direct-write photoetching material layer is 10-100nm.
3. photolithography thin film evoked by probe according to claim 1, the thickness that it is characterized in that described dielectric layer is 10-80nm.
4. photolithography thin film evoked by probe according to claim 1, the thickness that it is characterized in that described surface plasmon resonance layer is 20-100nm.
5. the preparation method of the described photolithography thin film evoked by probe of claim 1 is characterized in that it being the method preparation of adopting magnetron sputtering, and the sputter operating air pressure is better than 1.0 * 10
-3Pa adopts d.c. sputtering, radio-frequency sputtering and reactive d.c. sputtering to be coated with in glass of high refractive index substrate (4) respectively: surface plasmon resonance layer (3), dielectric layer (2) and direct-write photoetching material layer (1), the wherein AgO of direct-write photoetching material layer successively
x, x≤1 is by the control O that magnetron sputtering adopted
2: the Ar gas flow is recently realized, AgO
xComposition be Ag, AgO and Ag
2The potpourri of O; The NiO of described direct-write photoetching material layer
y, y≤3/2 is by the O of control during magnetron sputtering
2: the Ar gas flow realizes that recently its composition is NiO and Ni
2O
3Potpourri.
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| CN101256353B true CN101256353B (en) | 2010-12-08 |
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| CN101892461A (en) * | 2010-06-30 | 2010-11-24 | 中国科学院上海光学精密机械研究所 | Laser direct-writing membrane and method for directly writing micro/nano graph by laser |
| CN101914756B (en) * | 2010-07-02 | 2012-10-10 | 中国科学院上海光学精密机械研究所 | Method for directly writing micro-nano graphic structure by laser |
Citations (7)
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| US5200027A (en) * | 1991-11-12 | 1993-04-06 | General Motors Corporation | Oil microsensor having interdigitated electrodes with rough surfaces and methods of making and using the same |
| US6078055A (en) * | 1997-03-19 | 2000-06-20 | California Institute Of Technology | Proximity lithography device |
| CN1746707A (en) * | 2005-10-11 | 2006-03-15 | 浙江南方通信集团股份有限公司 | Production of ionic exchange glass light waveguide device |
| CN1886789A (en) * | 2003-12-02 | 2006-12-27 | 三星电子株式会社 | Super resolution information storage medium cross-reference to related applications |
| CN1963927A (en) * | 2006-11-23 | 2007-05-16 | 上海应用技术学院 | A blue magnetic optical disk |
| WO2007137995A3 (en) * | 2006-06-01 | 2008-01-31 | Univ Liege | A thermal detector |
| CN201174029Y (en) * | 2008-03-26 | 2008-12-31 | 中国科学院上海光学精密机械研究所 | Photolithography thin film evoked by probe |
-
2008
- 2008-03-28 CN CN200810035321XA patent/CN101256353B/en not_active Expired - Fee Related
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5200027A (en) * | 1991-11-12 | 1993-04-06 | General Motors Corporation | Oil microsensor having interdigitated electrodes with rough surfaces and methods of making and using the same |
| US6078055A (en) * | 1997-03-19 | 2000-06-20 | California Institute Of Technology | Proximity lithography device |
| CN1886789A (en) * | 2003-12-02 | 2006-12-27 | 三星电子株式会社 | Super resolution information storage medium cross-reference to related applications |
| CN1746707A (en) * | 2005-10-11 | 2006-03-15 | 浙江南方通信集团股份有限公司 | Production of ionic exchange glass light waveguide device |
| WO2007137995A3 (en) * | 2006-06-01 | 2008-01-31 | Univ Liege | A thermal detector |
| CN1963927A (en) * | 2006-11-23 | 2007-05-16 | 上海应用技术学院 | A blue magnetic optical disk |
| CN201174029Y (en) * | 2008-03-26 | 2008-12-31 | 中国科学院上海光学精密机械研究所 | Photolithography thin film evoked by probe |
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