CN101255058B - Superplastic nano Si3N4 ceramic material and preparation method thereof - Google Patents
Superplastic nano Si3N4 ceramic material and preparation method thereof Download PDFInfo
- Publication number
- CN101255058B CN101255058B CN2008100547450A CN200810054745A CN101255058B CN 101255058 B CN101255058 B CN 101255058B CN 2008100547450 A CN2008100547450 A CN 2008100547450A CN 200810054745 A CN200810054745 A CN 200810054745A CN 101255058 B CN101255058 B CN 101255058B
- Authority
- CN
- China
- Prior art keywords
- sintering
- nano
- nanometer
- ceramic material
- superplastic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Ceramic Products (AREA)
Abstract
The invention discloses a superplastic nano-Si3N4-based ceramic material. The Superplastic nano-Si3N4-based ceramic material is produced by mixing amorphous or crystalline nanometer silicon nitride powder, nanometer aluminum nitride powder, nanometer silicon carbide powder and sintering additive powders of nanometer aluminum oxide and nanometer yttrium oxide. The preparation method includes: adopting hot-pressing or spark plasma sintering; the sintering process being the same as the general silicon carbide sintering which needs filling nitrogen for protection after vacuum dumping. The sintering process parameter are as follows: (a) hot pressing: sintering temperature: 1500-1800 DEG C; sintering pressure: higher than 15MPa; holding time: 20min-120min; (b) spark plasma sintering: sintering temperature: 900-1300 DEG C; sintering pressure: higher than 10MPa; holding time: 5s-10min. The Superplastic nano-Si3N4-based ceramic material has a grain diameter between 50nm-200nm and can be shapedby hot press molding or superplastic forming, solving the problem that ceramic parts of complex shape are difficult in forming.
Description
Technical field
The present invention relates to a kind of process of preparing of superplastic nano pottery, particularly relate to a kind of superplastic nano Si
3N
4Base ceramic material and preparation method thereof.
Background technology
Japan Nagoya Industrial Technology Research Institute in 1986 have reported the stretching superplasticity of polycrystalline ceramics, and they have found 3Y-TZP (3mol%Y
2O
3Stablize ZrO
2Polycrystal) can produce>120% Uniform Tension deformation.This piece report has caused the interior broad research about ceramic superplasticity of world wide.Except the Y-TZP material, Al
2O
3, Al
2O
3-ZrO
2Composite, mullite, Si
3N
4, Si
3N
4The ceramic materials such as-SiC composite also are found to have superplasticity to a certain degree.
Silicon-nitride-based ceramic is very rapidly high-temperature structural material of development owing to have the excellent mechanicals behavior under high temperature such as elevated temperature strength height, wearability and corrosion resistance are good.Yet the covalent bond of silicon nitride ceramics and the high temperature of nitrogen hang down diffusion coefficient, cause Si
3N
4Pottery manufacturing cost height, and intrinsic fragility is unfavorable for Complex Parts processing and manufacturing.Studies show that of past, although the covalent bond pottery can show certain high temperature compressed ductility, stretching ductility is very limited, such as Si
3N
4The stretcher strain amount only have 3%.Up to nineteen ninety, Wakai etc. are at 1600 ℃, and strain rate is 4 * 10
-5s
-1Condition under, to Si
3N
4/ SiC matrix material carries out tension test, and its elongation reaches 150%, has confirmed that the covalent linkage pottery also has the superplastic deformation ability.Subsequently, people are to Si
3N
4The superplasticity of/SiC composite and Sailon pottery has been carried out careful deep research, and the result shows that thin brilliant silicon nitride ceramics at high temperature also can show superelastic characteristics.1997, the people such as Mitomo adopted the method for reaction in-situ sintering, the β-Si take particle diameter as 200nm
3N
4Powder is parent material, with cordierite (2MgO2Al
2O
35SiO
2) be sintering aid, prepared Si
3N
4-Si
2N
2The O complex phase ceramic, 2000, they studied the superplasticity of pottery again, and the pottery of sintering has preferably superplasticity property.1999, the people such as Wakai also adopted special sintering process, had prepared the β-Si of pure thin crystalline substance
3N
4, by its superplasticity is studied discovery, having good superplasticity property, the superplasticity percentage elongation reaches 300%.2003, the Chinese of Stockholm Univ Sweden adopted discharge plasma sintering technique to prepare average crystal grain diameter at the Sialon of 200~400nm pottery, and had studied at 1600 ℃ the Sialon ceramic part has been carried out extrusion molding research.
At present, Si
3N
4The weak point of the preparation technology of base ceramic material and superplasticity process technology has two: one, and crystallite dimension is grown up and is difficult to control in the sintering process, the average grain size of prepared material is bigger, generally between the hundreds of nanometer is to several microns, affected the superplasticity property of material; The 2nd, Si
3N
4The superplasticity processing temperature height of ceramic material, rate of deformation is low, and processing conditions is relatively harsher.
The superplasticity of silicon nitride ceramics is relevant with crystal grain diameter, and crystallite dimension is more little, and its superplasticity property is more good.
Summary of the invention
In order to solve Si
3N
4The base ceramic material average grain size is big, superplasticity processing temperature height, rate of deformation is low and the deficiency such as processing conditions harshness, the invention provides a kind of superplastic nano Si
3N
4The material average crystal grain diameter that base ceramic material and preparation method thereof, this invention are prepared can between 50nm-200nm, can be realized the high strain rate superplasticity distortion of material and the Quick-forming of ceramic part.
The technical solution adopted for the present invention to solve the technical problems is:
(1) powder mixes: with amorphous or crystalline state nanometer Si
3N
4Powder, nanometer AlN powder, nano SiC powder and nanometer Al
2O
3, Y
2O
3The sintering aid powder mixes; Each powder average crystal grain diameter is 10~100nm, and shared mass percent is:
Nanometer Si
3N
4: 50%~80%;
Nanometer AlN:5%~15%;
Nano SiC: 5%~15%;
Nanometer Al
2O
3: 5~10%;
Nanometer Y
2O
3: 5~10%;
(2) sintering process:
Above-mentioned mixed powder is adopted hot pressed sintering or discharge plasma sintering; Sintering process is the same with common silicon nitride sintering, is filled with nitrogen protection after need vacuumizing.
Sintering process parameter is:
(2.1) hot pressed sintering: sintering temperature is 1500~1800 ℃, sintering pressure>15MPa, soaking time 20min~120min;
(2.2) discharge plasma sintering: sintering temperature is 900~1300 ℃, sintering pressure>10MPa, soaking time 5s~10min.
The invention has the beneficial effects as follows the superplastic nano Si for preparing
3N
4Base ceramic material comprehensive mechanical property excellence has excellent superplasticity property simultaneously, and deformation strain speed can reach 1~10
-3/ s can adopt superplastic forming process forming ceramic part, has solved the problem that the complicated shape ceramic part is difficult to be shaped.
Embodiment
Embodiment
(1) with nanometer Si
3N
4(amorphous or crystalline state) powder, nanometer AlN powder, nano SiC powder and nanometer Al
2O
3, Y
2O
3The sintering aid powder is 6: 1.5: 1.5 in mass ratio: mix at 0.5: 0.5, each powder average crystal grain diameter is 10~100nm;
(2) precompressed of mixed powder being packed in the graphite jig is put into hot-pressed sintering furnace with mould once then;
(3) be loaded into 30MPa, vacuumize, the inflated with nitrogen protection;
(4) be warmed up to 1600 ℃, soaking time is 60min;
(5) with the stove cooling, take out sample;
(6) sample is detected, sample average grain size 80nm is 1650 ℃ of tensile deformation strain rates 10
-2/ s.
Superplastic nano Si
3N
4Base ceramic material can adopt hot-forming or superplastic forming, and for example: the direct heat of various parts is molded; The pull and stretch of various sheet materials, bending forming; The bulging of tubing; The extruding of various block materials parts (turbine, blade etc.), forging and molding etc.
Claims (2)
1. superplastic nano Si
3N
4Base ceramic material is characterized in that: described superplastic nano Si
3N
4Base ceramic material is for amorphous or crystalline state Nano powder of silicon nitride, nano aluminum nitride powder, nano silicon carbide powder, nano aluminium oxide and nano yttrium oxide sintering aid powder mix; The average crystal grain diameter of each powder is 10~100nm, and shared mass percent is:
Nanometer Si
3N
4: 50%~80%;
Nanometer AlN:5%~15%;
Nano SiC: 5%~15%;
Nanometer Al
2O
3: 5~10%;
Nanometer Y
2O
3: 5~10%.
2. one kind prepares superplastic nano Si as claimed in claim 1
3N
4The method of base ceramic material is characterized in that: adopt hot pressed sintering or discharge plasma sintering; Sintering process is the same with common silicon nitride sintering, is filled with nitrogen protection after need vacuumizing;
Sintering process parameter is:
(2.1) hot pressed sintering: sintering temperature is 1500~1800 ℃, sintering pressure>15MPa, soaking time 20min~120min;
(2.2) discharge plasma sintering: sintering temperature is 900~1300 ℃, sintering pressure>10MPa, soaking time 5s~10min.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2008100547450A CN101255058B (en) | 2008-04-03 | 2008-04-03 | Superplastic nano Si3N4 ceramic material and preparation method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2008100547450A CN101255058B (en) | 2008-04-03 | 2008-04-03 | Superplastic nano Si3N4 ceramic material and preparation method thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101255058A CN101255058A (en) | 2008-09-03 |
CN101255058B true CN101255058B (en) | 2010-11-03 |
Family
ID=39890223
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2008100547450A Expired - Fee Related CN101255058B (en) | 2008-04-03 | 2008-04-03 | Superplastic nano Si3N4 ceramic material and preparation method thereof |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN101255058B (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101913879B (en) * | 2010-09-03 | 2013-05-22 | 北京中材人工晶体研究院有限公司 | Silicon nitride material and preparation method thereof, as well as silicon nitride heating device and production method thereof |
CN102531612A (en) * | 2010-12-15 | 2012-07-04 | 北京中材人工晶体研究院有限公司 | Silicon nitride material and preparation method of heat insulating disc cover prepared from same |
CN104774014A (en) * | 2015-03-24 | 2015-07-15 | 沈阳工业大学 | Plastic fracture-resistant silicon nitride ceramic and preparation method thereof |
CN113213947A (en) * | 2021-05-28 | 2021-08-06 | 福建臻璟新材料科技有限公司 | Aluminum nitride doped modified nano silicon nitride composite ceramic powder and preparation method thereof |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1172782A (en) * | 1997-07-16 | 1998-02-11 | 国家建筑材料工业局山东工业陶瓷研究设计院 | Nanometre silicon-carbide-silicon nitride complex phase ceramics and its preparation method |
CN1654432A (en) * | 2004-10-11 | 2005-08-17 | 西安交通大学 | Method for preparing silicon nitride/silicon carbide porous ceramic |
-
2008
- 2008-04-03 CN CN2008100547450A patent/CN101255058B/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1172782A (en) * | 1997-07-16 | 1998-02-11 | 国家建筑材料工业局山东工业陶瓷研究设计院 | Nanometre silicon-carbide-silicon nitride complex phase ceramics and its preparation method |
CN1654432A (en) * | 2004-10-11 | 2005-08-17 | 西安交通大学 | Method for preparing silicon nitride/silicon carbide porous ceramic |
Non-Patent Citations (2)
Title |
---|
晏建武等.氮化硅纳米复合陶瓷的抗氧化性与耐蚀性研究.材料保护36 2.2003,36(2),10-12. |
晏建武等.氮化硅纳米复合陶瓷的抗氧化性与耐蚀性研究.材料保护36 2.2003,36(2),10-12. * |
Also Published As
Publication number | Publication date |
---|---|
CN101255058A (en) | 2008-09-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN108285355B (en) | Method for preparing SiC nanowire reinforced reaction sintered silicon carbide ceramic matrix composite | |
CN109553419B (en) | Pneumatic solid-phase sintered boron carbide complex-phase ceramic and preparation method thereof | |
CN102115332B (en) | High-strength beta-SiAlON ceramic and pressureless sintering preparation method thereof | |
CN101255058B (en) | Superplastic nano Si3N4 ceramic material and preparation method thereof | |
CN101255057B (en) | Silicon nitride porous ceramic composition and preparation method thereof | |
CN101708989B (en) | Method for preparing aluminum nitride/boron nitride composite ceramic through combustion synthesis method | |
CN104045350B (en) | Method for preparing silicon nitride /silicon carbide ceramic composite by use of reaction sintering process | |
CN110304924B (en) | Silicon carbide composite material with layered structure and preparation method thereof | |
CN108675797B (en) | Silicon nitride-based composite ceramic material and microwave sintering preparation method thereof | |
CN101255056B (en) | Superplastic nano AlN ceramic material and preparation method thereof | |
CN112592188A (en) | Preparation method of graphene composite silicon carbide ceramic material | |
JP6436905B2 (en) | Boron carbide ceramics and manufacturing method thereof | |
CN101054301A (en) | Method of preparing composite material of silicon nitride and silicon carbide by reverse reaction sintering | |
CN108658589A (en) | The preparation method of sub-micro crystal alumina ceramic tool matrix material | |
CN104003728A (en) | Pressureless sintering preparation method of Ti2SC ceramic | |
CN113957294A (en) | CrCoNi intermediate entropy alloy reinforced Al-based composite material and preparation method thereof | |
CN114507789A (en) | Preparation method of in-situ generated TiN particle reinforced nickel-based composite material | |
KR101072594B1 (en) | Manufacturing method of low temperature sintered SiC having superplasticity or high deformation rate | |
JP3985036B2 (en) | Zirconium aluminide reinforced composite material using reaction synthesis of zirconia and aluminum and method for producing the same | |
JP2972836B2 (en) | Forming method of composite ceramics | |
CN102219521A (en) | Superplastic nano aluminium nitride ceramic | |
CN114643359B (en) | Preparation method of high-strength powder metallurgy Ti-W alloy bar | |
JPH0539535A (en) | Combined ceramic sintered body and its manufacture | |
Kondo et al. | Semi-homogeneous joining of silicon nitride with a silicon nitride powder insert | |
CN117282967A (en) | Improve powder metallurgy Ti 2 Heat treatment method for room temperature plasticity of AlNb alloy |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
CB03 | Change of inventor or designer information |
Inventor after: Luo Junting Inventor after: Zhang Chunxiang Inventor after: Liu Riping Inventor before: Luo Junting |
|
COR | Change of bibliographic data |
Free format text: CORRECT: INVENTOR; FROM: LUO JUNTING TO: LUO JUNTING ZHANG CHUNXIANG LIU RIPING |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20101103 Termination date: 20130403 |