CN101251997A - Poly iron performance composed film reading magnetic head based on magnetoelectric effect - Google Patents
Poly iron performance composed film reading magnetic head based on magnetoelectric effect Download PDFInfo
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- CN101251997A CN101251997A CNA2008101038123A CN200810103812A CN101251997A CN 101251997 A CN101251997 A CN 101251997A CN A2008101038123 A CNA2008101038123 A CN A2008101038123A CN 200810103812 A CN200810103812 A CN 200810103812A CN 101251997 A CN101251997 A CN 101251997A
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Abstract
The invention relates to a magnetoelectric effect-based multiferroic composite film read magnetic head, which comprises a ferroelectric oxide layer grown on a substrate and a magnetic layer. A plurality of proposals for the structure of the read magnetic head are provided as follows: the ferroelectric oxide layer grown on the substrate serves as the first layer and the magnetic layer as the second layer, which forms the first structural unit; or the magnetic layer grown on the substrate serves as the first layer and the ferroelectric oxide layer as the second layer, which forms the second structural unit; the first structural units are repeatedly stacked on the substrate; the second structural units are repeatedly stacked on the substrate; a ferroelectric oxide layer is then stacked on the first structural units which are repeatedly stacked on the substrate; a magnetic layer is then stacked on the second structural units which are repeatedly stacked on the substrate, and a magnetic layer is grown on the ferroelectric oxide substrate. Compared with a conventional read magnetic head, the multiferroic composite film read magnetic head has the advantages that no external bias magnetic field is needed, the structure is simple, and no energy is consumed.
Description
Technical field
The invention belongs to preparation of many iron property magnetoelectricity laminated film and application, relate to a kind of many iron of simple structure property laminated film, and use reading magnetic head application based on the magnetoelectric effect of this novel multiferroic film.
Background technology
The Magnetic Sensor of broad sense causes that the variation of sensitive element magnetic property converts electric signal to magnetic field, electric current, ess-strain, temperature, light etc. exactly, detects the device of respective physical amount by this way.General Magnetic Sensor is the existence that is used for detecting magnetic field, measures the intensity in magnetic field, determines the direction in magnetic field, or the intensity direction in definite magnetic field vicissitudinous device whether.Along with developing rapidly of information industry, communications and transportation, Medical Instruments etc., Magnetic Sensor has obtained application more and more widely, also Magnetic Sensor microminiaturization, sensitivity, usable range, cost and preparation technology etc. is had higher requirement.At present, the of paramount importance application of Magnetic Sensor is the reading magnetic head in the magnetic memory device.The mid-90 in 20th century, reading magnetic head mainly adopts film induction (TEI) reading magnetic head, and it is actually the magnetic core of coiling, magnetic recording media under the magnetic core of coiling by the time can on magnetic head, produce induced voltage; In recent years, thin-film magnetoresistive (MR) reading magnetic head has obtained developing rapidly and using.Principle of work difference according to the thin-film magnetoresistive reading magnetic head, can also be subdivided into anisotropic magnetoresistive (AMR) reading magnetic head, giant magnetoresistance (GMR) reading magnetic head and gmr spin valve (SV) or tunnel valve (TV) reading magnetic head, adopt the reading magnetic head of these principle of work manufacturings from the increasing magnetic recording media of storage density, to read information.Wherein, giant magnetoresistance (GMR) reading magnetic head 104 has obtained widespread use at present in the magnetic recording field of reading.The magnetic head typical construction of practical application as shown in Figure 1, it has comprised magnetic shielding boots 103 behind an inductive coil formula magnetic r/w cell 106, giant magnetoresistance (GMR) reading magnetic head 104, preceding magnetic shielding boots 102 and, wherein being wrapped on the magnetic r/w cell 106 is conductive coil 105, and the magnetic head below is a magnetic recording media 101.But adopt the reading magnetic head of magnetoresistance manufacturing generally need apply bias magnetic field at work by certain way, cause its structure comparatively complicated, for example typical giant magnetoresistance (GMR) reading magnetic head is made of 4 layers of conductive material and magnetic material film, comprise the non-conductive intermediary layer of the bolt layer 201, of a magnetic 202,203 an and sensing layer 204 of exchange layer, as shown in Figure 2.The thin-film magnetoresistive reading magnetic head adopts gallon mode sense resistance to change in the course of the work simultaneously, has than higher energy consumption, is unfavorable for the long-time use of portable equipment.
In recent years, people are devoted to develop that the new function compound substance with magnetoelectric effect---many iron property magnetic electric compound material is used for detection of magnetic field.Magnetoelectric effect is meant and applies the effect that magnetic field causes that electric polarization changes, perhaps applies the effect that electric field causes that magnetic polarization changes.The magnetoelectricity conversion coefficient is a leading indicator of weighing the magnetoelectric material performance.The principle that magnetic electric compound material is surveyed magnetic field is to utilize magnetoelectric effect, is electropolarized variation with the change transitions in magnetic field, and then the variation that obtains output voltage is measured.Magnetic electric compound material generally is composited by the magnetic material of piezoelectric with piezoelectric effect and magnetostrictive effect.At present, the research that is used for detection of magnetic field for magnetic electric compound material is primarily aimed at the block compound magnetoelectric material to be carried out, and the general volume of sample is bigger, does not match with reading magnetic head in the existing magnetic recording equipment, can not be used for reading magnetic head, also need the external dc bias magnetic field when carrying out detection of magnetic field simultaneously.Adopt the method for physics or chemistry to prepare many iron property magnetoelectricity laminated film, under suitable process conditions, can make it have magnetoelectric effect.2004, the method for human pulsed laser depositions such as the Zheng H of Univ Maryland-Coll Park USA prepared barium titanate (BaTiO
3) and vectolite (CoFe
2O
4) laminated film, vectolite (CoFe wherein
2O
4) the nanometer pillar be embedded in barium titanate (BaTiO
3) matrix in form the 1-3 structure.They have confirmed that with variation of temperature laminated film has magnetoelectric effect by the measuring samples magnetization.Recently, the method for the human pulsed laser depositions such as Ma of NUS has prepared lead zirconate titanate (Pb (Zr
0.52Ti
0.48) O
3) and lanthanum strontium manganese oxygen (La
0.7Sr
0.3MnO
3) laminated film, lead zirconate titanate (Pb (Zr wherein
0.52Ti
0.48) O
3) and lanthanum strontium manganese oxygen (La
0.7Sr
0.3MnO
3) be the structure of lamination.They have directly measured the magnetoelectricity conversion coefficient of sample under the situation that applies direct current biasing magnetic field, the magnetoelectricity conversion coefficient is 4.2mV/cmOe in the face.
Summary of the invention
The present invention is directed to existing magnetoresistance reading magnetic head and need add bias magnetic field, complex structure and energy consumption problem of higher, a kind of many iron property film reading magnetic head based on magnetoelectric effect is provided.
Technical scheme of the present invention is as follows:
A kind of many iron property film reading magnetic head based on magnetoelectric effect is characterized in that: described reading magnetic head adopts many iron property magnetoelectricity laminated film, and this laminated film is made of the ferroelectric oxide layer 302 and the magnetosphere 301 that are grown on the substrate 303.
Preferred feature of the present invention is: be grown in on-chip ferroelectric oxide layer 302 for ground floor, magnetosphere 301 are the second layer, form first kind of structural unit 304; Can also adopt described first kind of structural unit 304 repeatedly stacking on substrate is formed a kind of magnetic head structure, perhaps on first kind of structural unit 304 of repeatedly stacking, pile up one deck ferroelectric oxide layer 302 again and form another kind of magnetic head structure.
Another preferred feature of the present invention is: be grown in on-chip magnetosphere 301 and be ground floor, ferroelectric oxide layer 302 is the second layer, forms second kind of structural unit 305; Can also adopt described second kind of structural unit 305 repeatedly stacking on substrate is formed a kind of magnetic head structure, perhaps on the second kind of structural unit 305 that piles up again, pile up one deck magnetosphere 301 again and form another magnetic head structure.
In the technique scheme, the described ferroelectric oxide layer 302 preferred barium titanate (BaTiO that adopts
3), lead titanates (PbTiO
3) or lead zirconate titanate (Pb (Zr, Ti) O
3); The described magnetosphere 301 preferred Ni ferrite (NiFe that adopt
2O
4), vectolite (CoFe
2O
4) or magnetic metal.The preferred thickness of ferroelectric oxide layer is 5～110nm; Magnetospheric preferred thickness is 5～100nm.
The present invention also provides another kind of many iron property film reading magnetic head based on magnetoelectric effect, and it is characterized in that: this reading magnetic head constitutes by being grown in the on-chip magnetosphere of ferroelectric oxide.
The present invention has the following advantages and the high-lighting effect:
Adopt many iron property magnetoelectricity laminated film as the magnetic reading magnetic head, than giant magnetoresistance (GMR) reading magnetic head, need not to add bias magnetic field, its structure is very simple; Owing to be to adopt the mode of directly gathering voltage signal to survey magnetic field, do not need to apply drive current, the characteristics that also have no energy consumption based on many iron property film reading magnetic head of magnetoelectric effect proposed by the invention.
Description of drawings
Fig. 1: magnetic head typical construction synoptic diagram.
Fig. 2: giant magnetoresistance (GMR) reading magnetic head typical structure synoptic diagram.
Fig. 3: based on many iron property film reading magnetic head structural representation of magnetoelectric effect, (a) magnetosphere/ferroelectric layer/substrate, (b) ferroelectric layer/magnetosphere/substrate, (c) (magnetosphere/ferroelectric layer)
n/ substrate, n are positive integer, (d) (ferroelectric layer/magnetosphere)
n/ substrate, n are positive integer, (e) ferroelectric layer/(magnetosphere/ferroelectric layer)
n/ substrate, n are positive integer, (f) magnetosphere/(ferroelectric layer/magnetosphere)
n/ substrate, n are positive integer, (g) magnetosphere/ferroelectric substrate
Fig. 4: laminated film magnetoelectricity test synoptic diagram, (a) be side view, (b) be front view.Perturbation AC magnetic field δ H
AcDirection shown in arrow among the figure.
Fig. 5: compound magnetoelectric membrane analogy reading magnetic head synoptic diagram.
Fig. 6: under the 1000Hz, the magneto-electric response δ V of embodiment 1 is with perturbation magnetic field δ H
AcThe variation relation of amplitude.
Fig. 7: under the 1000Hz, the magneto-electric response δ V of embodiment 2 is with perturbation magnetic field δ H
AcThe variation relation of amplitude.
Fig. 8: under the 1000Hz, the magneto-electric response δ V of embodiment 3 is with perturbation magnetic field δ H
AcThe variation relation of amplitude.
Fig. 9: under the 1000Hz, the magneto-electric response δ V of embodiment 4 is with perturbation magnetic field δ H
AcThe variation relation of amplitude.
Figure 10: under the 1000Hz, the magneto-electric response δ V of embodiment 5 is with perturbation magnetic field δ H
AcThe variation relation of amplitude.
Figure 11: under the 1000Hz, the magneto-electric response δ V of embodiment 6 is with perturbation magnetic field δ H
AcThe variation relation of amplitude.
Figure 12: under the 1000Hz, the magneto-electric response δ V of embodiment 7 is with perturbation magnetic field δ H
AcThe variation relation of amplitude.
Figure 13: under the 1000Hz, the magneto-electric response δ V of embodiment 8 is with perturbation magnetic field δ H
AcThe variation relation of amplitude.
Figure 14: under the 1000Hz, the magneto-electric response δ V of embodiment 9 is with perturbation magnetic field δ H
AcThe variation relation of amplitude.
Figure 15: under the 1000Hz, the magneto-electric response δ V of embodiment 10 is with perturbation magnetic field δ H
AcThe variation relation of amplitude.
Figure 16: under the 1000Hz, the magneto-electric response δ V of embodiment 11 is with perturbation magnetic field δ H
AcThe variation relation of amplitude.
Figure 17: under the no external dc bias magnetic field situation, embodiment 3 is the square wave alternating-current magnetic field δ H of 1000Hz in frequency
AcMagneto-electric response under the effect.
Figure 18: under the no external dc bias magnetic field situation, embodiment 3 is the sine wave AC magnetic field δ H of 1000Hz in frequency
AcMagneto-electric response under the effect.
Figure 19: under the no external dc bias magnetic field situation, embodiment 3 is the random wave AC magnetic field δ H of 1000Hz in frequency
AcMagneto-electric response under the effect.
Figure 20: under the no external dc bias magnetic field situation, embodiment 3 is the square wave alternating-current magnetic field δ H of 500Hz in frequency
AcMagneto-electric response under the effect.
Figure 21: under the no external dc bias magnetic field situation, embodiment 3 is the sine wave AC magnetic field δ H of 500Hz in frequency
AcMagneto-electric response under the effect.
Figure 22: under the no external dc bias magnetic field situation, embodiment 3 is the random wave AC magnetic field δ H of 500Hz in frequency
AcMagneto-electric response under the effect.
The 101-magnetic storage medium; Magnetic shielding boots before the 102-; Magnetic shielding boots behind the 103-; 104-giant magnetoresistance (GMR) reading magnetic head; The 105-conductive coil; The 106-magnetic storage medium; The bolt layer of 201-magnetic; The non-conductive intermediary layer of 202-; 203-exchanges layer; 204 1 sensing layers; The 301-magnetosphere; 302-ferroelectric oxide layer; The 303-substrate; First kind of structural unit of 304-; Second kind of structural unit of 305-; The ferroelectric substrate of 306-; 401-platinum top electrode; The 402-multiferroic film; The 403-conductive substrate; 404-silver (Ag) line; The 405-test fixture; The 406-lock-in amplifier; The 407-oscillograph.
Embodiment
Below in conjunction with accompanying drawing structure of the present invention, magnetic electricity performance method of testing are further described.
Fig. 3 is the many iron property film reading magnetic head structural representation based on magnetoelectric effect provided by the invention.This reading magnetic head adopts many iron property magnetoelectricity laminated film, and this laminated film is made of the ferroelectric oxide layer 302 and the magnetosphere 301 that are grown on the substrate 303, and its structure can have multiple scheme.A kind of is that the ferroelectric oxide layer 302 that is grown on the substrate 303 is that ground floor, magnetosphere 301 are the second layer, forms first kind of structural unit 304 (shown in Fig. 3 (a)); Can also adopt described first kind of structural unit 304 repeatedly stacking on substrate is formed a kind of magnetic head structure (shown in Fig. 3 (c)), perhaps on first kind of structural unit 304 of repeatedly stacking, pile up one deck ferroelectric oxide layer 302 again and form another kind of magnetic head structure (shown in Fig. 3 (e)).
Another technical scheme of the present invention is: be grown in on-chip magnetosphere 301 and be ground floor, ferroelectric oxide layer 302 is the second layer, forms second kind of structural unit 305 (shown in Fig. 3 (b)); Can also adopt described second kind of structural unit 305 repeatedly stacking on substrate is formed a kind of magnetic head structure (shown in Fig. 3 (d)), perhaps on the second kind of structural unit 305 that piles up again, pile up one deck magnetosphere 301 again and form another magnetic head structure (shown in Fig. 3 (f)).
In the technique scheme, described ferroelectric oxide layer (302) preferably adopts barium titanate (BaTiO
3), lead titanates (PbTiO
3) or lead zirconate titanate (Pb (Zr
0.52Ti
0.48) O
3) etc.; Described magnetosphere (301) preferably adopts Ni ferrite (NiFe
2O
4), vectolite (CoFe
2O
4) or tri-iron tetroxide (Fe
3O
4) etc.The general preferred thickness of ferroelectric oxide layer is 5～110nm; Magnetospheric general preferred thickness is 5～100nm.
Another kind provided by the invention is to constitute ((shown in Fig. 3 (g)) by the magnetosphere 301 that is grown on the ferroelectric oxide substrate 306 based on many iron property film reading magnetic head of magnetoelectric effect.
The present invention adopts the method for pulsed laser deposition to prepare many iron property magnetoelectricity laminated film, and the ferroelectric material target that uses is barium titanate (BaTiO
3), can also select lead titanates (PbTiO for use
3), lead zirconate titanate (Pb (Zr
0.52Ti
0.48) O
3) waiting other ferroelectric oxide materials, the magnetic material target is selected Ni ferrite (NiFe for use
2O
4), can also select vectolite (CoFe for use
2O
4), tri-iron tetroxide (Fe
3O
4) waiting other magnetic materials, substrate is selected strontium titanates (SrTiO for use
3) substrate, also can select other substrates for use.With the exception of this, can also directly adopt ferroelectric oxide as substrate, depositing magnetic film forms the magnetoelectricity composite structure as reading magnetic head.Impulse laser deposition system is the film deposition equipment of commercially producing.By the easy steps of substrate cleaning, the installation of target substrate, substrate pre-service, target cleaning, film growth, annealing in process, select suitable technological parameter can prepare high-quality many iron property laminated film.The mentioned many iron property film reading magnetic head based on magnetoelectric effect of the present invention also can deposit preparation by other the physics or the method for chemistry.
The magnetic electricity performance method of testing of many iron property film reading magnetic head involved in the present invention as shown in Figure 4, adopt the method for ion sputtering to deposit platinum (Pt) top electrode 401 that diameter is about 0.3mm on many iron property laminated film 402 surfaces earlier, then whole sample is fixed on the test fixture 405, places perturbation AC magnetic field δ H
AcIn; Then draw signal from top electrode 401 and substrate 403 respectively by silver (Ag) line 404; Signal is observed and data acquisition by oscillograph 407 after handling by lock-in amplifier 406.During the magnetic electricity performance test, outer test pattern of face and face build-in test mode perturbation AC magnetic field δ H
AcDirection is respectively parallel and vertical many iron property laminated film 402 normal directions, shown in Fig. 4 (a) and (b).
The present invention is described further to enumerate several embodiment below.
Adopt the method for pulsed laser deposition, at the strontium titanates (SrTiO of (001) orientation
3) deposition many iron property laminated film on the substrate, ground floor deposition barium titanate (BaTiO
3), second layer nickel deposited ferrite (NiFe
2O
4), form structure shown in Fig. 3 (a).Barium titanate (BaTiO
3) layer thickness be 110nm, Ni ferrite (NiFe
2O
4) layer thickness is 40nm.At perturbation magnetic field δ H
AcFrequency when being 1000Hz, magneto-electric response δ V is with perturbation magnetic field δ H
AcThe variation relation of amplitude as shown in Figure 6, by α
E=δ V/ (δ H
AcT) (t is a film thickness) calculates that the magnetoelectricity conversion coefficient is 39.2mV/cm Oe in the face of this many iron property film reading magnetic head, and the outer magnetoelectricity conversion coefficient of face is 43.9mV/cm Oe.
Adopt the method for pulsed laser deposition, at the strontium titanates (SrTiO of (001) orientation
3) deposition many iron property laminated film on the substrate, ground floor nickel deposited ferrite (NiFe
2O
4), second layer deposition barium titanate (BaTiO
3), form structure shown in Fig. 3 (b).Ni ferrite (NiFe
2O
4) layer thickness be 40nm, barium titanate (BaTiO
3) layer thickness is 75nm.At perturbation magnetic field δ H
AcFrequency when being 1000Hz, magneto-electric response δ V is with perturbation magnetic field δ H
AcThe variation relation of amplitude as shown in Figure 7, by α
E=δ V/ (δ H
AcT) (t is a film thickness) calculates that the magnetoelectricity conversion coefficient is 4.9mV/cm Oe in the face of this many iron property film reading magnetic head, and the outer magnetoelectricity conversion coefficient of face is 5.3mV/cm Oe.
Adopt the method for pulsed laser deposition, at the strontium titanates (SrTiO of (111) orientation
3) deposition many iron property laminated film on the substrate, ground floor deposition barium titanate (BaTiO
3), second layer nickel deposited ferrite (NiFe
2O
4), form structure shown in Fig. 3 (a).Barium titanate (BaTiO
3) layer thickness be 100nm, Ni ferrite (NiFe
2O
4) layer thickness is 30nm.At perturbation magnetic field δ H
AcFrequency when being 1000Hz, magneto-electric response δ V is with perturbation magnetic field δ H
AcThe variation relation of amplitude as shown in Figure 8, by α
E=δ V/ (δ H
AcT) (t is a film thickness) calculates that the magnetoelectricity conversion coefficient is 44mV/cm Oe in the face of this many iron property film reading magnetic head, and the outer magnetoelectricity conversion coefficient of face is 79mV/cm Oe.
Adopt the method for pulsed laser deposition, at the strontium titanates (SrTiO of (111) orientation
3) deposition many iron property laminated film on the substrate, ground floor nickel deposited ferrite (NiFe
2O
4), second layer deposition barium titanate (BaTiO
3), form structure shown in Fig. 3 (b).Ni ferrite (NiFe
2O
4) layer thickness be 30nm, barium titanate (BaTiO
3) layer thickness is 100nm.At perturbation magnetic field δ H
AcFrequency when being 1000Hz, magneto-electric response δ V is with perturbation magnetic field δ H
AcThe variation relation of amplitude as shown in Figure 9, by α
E=δ V/ (δ H
AcT) (t is a film thickness) calculates that the magnetoelectricity conversion coefficient is 31mV/cm Oe in the face of this many iron property film reading magnetic head, and the outer magnetoelectricity conversion coefficient of face is 37mV/cm Oe.
Adopt the method for pulsed laser deposition, at the strontium titanates (SrTiO of (001) orientation
3) deposition many iron property laminated film on the substrate, ground floor deposition barium titanate (BaTiO
3), second layer nickel deposited ferrite (NiFe
2O
4), form structure shown in Fig. 3 (a).Barium titanate (BaTiO
3) layer thickness be 30nm, Ni ferrite (NiFe
2O
4) layer thickness is 100nm.At perturbation magnetic field δ H
AcFrequency when being 1000Hz, magneto-electric response δ V is with perturbation magnetic field δ H
AcThe variation relation of amplitude as shown in figure 10, by α
E=δ V/ (δ H
AcT) (t is a film thickness) calculates that the magnetoelectricity conversion coefficient is 22.3mV/cm Oe in the face of this many iron property film reading magnetic head, and the outer magnetoelectricity conversion coefficient of face is 28.4mV/cm Oe.
Adopt the method for pulsed laser deposition, at the strontium titanates (SrTiO of (001) orientation
3) deposition many iron property laminated film on the substrate, ground floor deposition barium titanate (BaTiO
3), second layer deposit cobalt ferrite (CoFe
2O
4) formation structure shown in Fig. 3 (a).Barium titanate (BaTiO
3) layer thickness be 70nm, vectolite (CoFe
2O
4) layer thickness is 20nm.At perturbation magnetic field δ H
AcFrequency when being 1000Hz, magneto-electric response δ V is with perturbation magnetic field δ H
AcThe variation relation of amplitude as shown in figure 11, by α
E=δ V/ (δ H
AcT) (t is a film thickness) calculates that the magnetoelectricity conversion coefficient is 66mV/cm Oe in the face of this many iron property film reading magnetic head, and the outer magnetoelectricity conversion coefficient of face is 104mV/cm Oe.
Embodiment 7
Adopt the method for pulsed laser deposition, at the strontium titanates (SrTiO of (001) orientation
3) deposition many iron property laminated film on the substrate, ground floor deposition barium titanate (BaTiO
3), second layer nickel deposited ferrite (NiFe
2O
4), forming first kind of structural unit, first kind of structural unit repeatedly stacking 2 times forms structure shown in Fig. 3 (c).Every layer of barium titanate (BaTiO
3) layer thickness be 5nm, every layer of Ni ferrite (NiFe
2O
4) layer thickness is 5nm.At perturbation magnetic field δ H
AcFrequency when being 1000Hz, magneto-electric response δ V is with perturbation magnetic field δ H
AcThe variation relation of amplitude as shown in figure 12, by α
E=δ V/ (δ H
AcT) (t is a film thickness) calculates that the magnetoelectricity conversion coefficient is 12.5mV/cm Oe in the face of this many iron property film reading magnetic head, and the outer magnetoelectricity conversion coefficient of face is 16.8mV/cm Oe.
Adopt the method for pulsed laser deposition, at the strontium titanates (SrTiO of (001) orientation
3) deposition many iron property laminated film on the substrate, ground floor nickel deposited ferrite (NiFe
2O
4), second layer deposition barium titanate (BaTiO
3), forming second kind of structural unit, second kind of structural unit repeatedly stacking 4 times forms structure shown in Fig. 3 (d).Every layer of barium titanate (BaTiO
3) layer thickness be 5nm, every layer of Ni ferrite (NiFe
2O
4) layer thickness is 5nm.At perturbation magnetic field δ H
AcFrequency when being 1000Hz, magneto-electric response δ V is with perturbation magnetic field δ H
AcThe variation relation of amplitude as shown in figure 13, by α
E=δ V/ (δ H
AcT) (t is a film thickness) calculates that the magnetoelectricity conversion coefficient is 7.8mV/cm Oe in the face of this many iron property film reading magnetic head, and the outer magnetoelectricity conversion coefficient of face is 9.2mV/cm Oe.
Adopt the method for pulsed laser deposition, at the strontium titanates (SrTiO of (001) orientation
3) deposition many iron property laminated film on the substrate, ground floor deposition barium titanate (BaTiO
3), second layer nickel deposited ferrite (NiFe
2O
4), forming first kind of structural unit, first kind of structural unit repeatedly stacking 3 times piles up one deck barium titanate (BaTiO again
3), form structure shown in Fig. 3 (e).Every layer of barium titanate (BaTiO
3) layer thickness be 10nm, every layer of Ni ferrite (NiFe
2O
4) layer thickness is 5nm.At perturbation magnetic field δ H
AcFrequency when being 1000Hz, magneto-electric response δ V is with perturbation magnetic field δ H
AcThe variation relation of amplitude as shown in figure 14, by α
E=δ V/ (δ H
AcT) (t is a film thickness) calculates that the magnetoelectricity conversion coefficient is 13.6mV/cm Oe in the face of this many iron property film reading magnetic head, and the outer magnetoelectricity conversion coefficient of face is 14.9mV/cm Oe.
Adopt the method for pulsed laser deposition, at the strontium titanates (SrTiO of (001) orientation
3) deposition many iron property laminated film on the substrate, ground floor nickel deposited ferrite (NiFe
2O
4), second layer deposition barium titanate (BaTiO
3), forming second kind of structural unit, second kind of structural unit repeatedly stacking 2 times piles up one deck Ni ferrite (NiFe again
2O
4), form structure shown in Fig. 3 (f).Every layer of barium titanate (BaTiO
3) layer thickness be 10nm, every layer of Ni ferrite (NiFe
2O
4) layer thickness is 10nm.At perturbation magnetic field δ H
AcFrequency when being 1000Hz, magneto-electric response δ V is with perturbation magnetic field δ H
AcThe variation relation of amplitude as shown in figure 15, by α
E=δ V/ (δ H
AcT) (t is a film thickness) calculates that the magnetoelectricity conversion coefficient is 10.2mV/cm Oe in the face of this many iron property film reading magnetic head, and the outer magnetoelectricity conversion coefficient of face is 12.6mV/cm Oe.
Adopt the method for pulsed laser deposition, at polishing barium titanate (BaTiO
3) nickel deposited ferrite (NiFe on the substrate
2O
4), form structure shown in Fig. 3 (g).Ni ferrite (NiFe
2O
4) layer thickness is 30nm.At perturbation magnetic field δ H
AcFrequency when being 1000Hz, magneto-electric response δ V is with perturbation magnetic field δ H
AcThe variation relation of amplitude as shown in figure 16, by α
E=δ V/ (δ H
AcT) (t is a film thickness) calculates that the magnetoelectricity conversion coefficient is 13.3mV/cm Oe in the face of this many iron property film reading magnetic head, and the outer magnetoelectricity conversion coefficient of face is 19.2mV/cm Oe.
Because the difference of record data, in the surperficial overhead certain limit of magnetic recording media (501), existence is with space varying magnetic field (502), when employing is grown in many iron property laminated film (505) on the substrate (504) as reading magnetic head (506) during along magnetic recording media (501) relative motion, the changes of magnetic field that detects is changed into the variation of electric signal and passes through lead (503) output, realize reading of data, principle is illustrated as shown in Figure 5.For instance, suppose to have an input signal a
k=(0,0,1,1,1,0,1,0,0,0,1,0,1,1,0,0), it is b according to a kind of more widely used PRML (PRML) channel PR4 chnnel coding
kBack ,=(0,0,1,1,0,1,1,1,1,1,0,1,1,0,1,0) adopts the write current of non-return-to-zero (NRZ) form to be recorded on the magnetic recording media (501).After reading magnetic head (506) changes the variable signal in the magnetic field (502) of sensing into continuous voltage signal, balanced device converts continuous signal to the discrete signals that is spaced apart time T again and sends into Viterbi (Viterbi) detector and decode, and is reduced to input signal a at last
kThe committed step of magnetic head reading of data accurately converts field signal to voltage signal exactly in the magnetic recording.For simulating the process of many iron property magnetoelectricity laminated film as the reading magnetic head reading of data, adopt function signal generator to drive helmholtz coil, simulation produces polytype magnetic field (502) signal, line shown in Figure 4 is pressed in many iron property magnetoelectricity laminated film sputter platinum (Pt) electrode (401) back that obtains among the embodiment 3, the magnetic field δ H that places helmholtz coil to produce, do not apply direct current biasing magnetic field, the parallel many iron property laminated film of AC magnetic field δ H surface, change the waveform of AC magnetic field, comprise square wave, sinusoidal wave, random wave, test the voltage responsive δ V of many iron property laminated film under the different frequency AC magnetic field, voltage signal is gathered by oscillograph (407) after lock-in amplifier (406) is handled, result such as Figure 17, Figure 18, Figure 19, Figure 20, Figure 21, shown in Figure 22.The result shows that all many iron property laminated film can make corresponding response to the variation in magnetic field, and magnetoelectricity output voltage signal δ V has identical waveform with AC magnetic field δ H, shows to be used as reading magnetic head.Wherein showed simulation sixteen bit binary data a arbitrarily among Figure 19 and Figure 22
kPass through above-mentioned coding, write, form magnetic field (502) the δ H that changes on magnetic recording media (501) surface, be converted to the process of voltage signal δ V then through too much iron magnetoelectricity film reading magnetic head, show that this many iron property film reading magnetic head can accurately respond for the random waveform through coding.Magnetoelectricity detection sensitivity among this embodiment is about 0.5 μ V/Oe.If many iron property film reading magnetic head is operated near its resonance frequency (GHz scope), sensitivity also will have the raising of hundreds of times.In prediction on such basis, adopt the many iron property film reading magnetic head based on magnetoelectric effect to be operated near the resonance frequency, (the about 100Oe in magnetic field) will obtain the voltage signal of millivolt magnitude near true magnetic disk surface, can be used as commercial reading magnetic head fully.
Claims (10)
1. many iron property film reading magnetic head based on magnetoelectric effect, it is characterized in that: described reading magnetic head adopts many iron property magnetoelectricity laminated film, and this laminated film is made of the ferroelectric oxide layer (302) and the magnetosphere (301) that are grown on the substrate (303).
2. according to the described a kind of many iron property film reading magnetic head of claim 1 based on magnetoelectric effect, it is characterized in that: be grown in on-chip ferroelectric oxide layer (302) for ground floor, magnetosphere (301) are the second layer, form first kind of structural unit (304).
3. according to the described a kind of many iron property film reading magnetic head of claim 1 based on magnetoelectric effect, it is characterized in that: being grown in on-chip magnetosphere (301) is ground floor, ferroelectric oxide layer (302) is the second layer, forms second kind of structural unit (305).
4. according to claim 2 or 3 described a kind of many iron property film reading magnetic heads based on magnetoelectric effect, it is characterized in that: the thickness of ferroelectric oxide layer is 5～110nm; Magnetospheric thickness is 5～100nm.
5. according to the described a kind of many iron property film reading magnetic head of claim 2, it is characterized in that: described first kind of structural unit (304) repeatedly stacking on substrate based on magnetoelectric effect.
6. according to the described a kind of many iron property film reading magnetic head of claim 3, it is characterized in that: described second kind of structural unit (305) repeatedly stacking on substrate based on magnetoelectric effect.
7. according to the described a kind of many iron property film reading magnetic head of claim 4, it is characterized in that: pile up one deck ferroelectric oxide layer (302) again above first kind of structural unit (304) of described repeatedly stacking based on magnetoelectric effect.
8. according to the described a kind of many iron property film reading magnetic head of claim 5, it is characterized in that: pile up one deck magnetosphere (301) again above second kind of structural unit (305) of described repeatedly stacking based on magnetoelectric effect.
9. according to the described a kind of many iron property film reading magnetic head based on magnetoelectric effect of claim 1-3, it is characterized in that: described ferroelectric oxide layer (302) adopts barium titanate (BaTiO
3), lead titanates (PbTiO
3) or lead zirconate titanate (Pb (Zr, Ti) O
3); Described magnetosphere (301) adopts Ni ferrite (NiFe
2O
4), vectolite (CoFe
2O
4) or magnetic metal.
10. many iron property film reading magnetic head based on magnetoelectric effect is characterized in that: described reading magnetic head is made of the magnetosphere (301) that is grown on the ferroelectric oxide substrate (306).
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| CN102593348A (en) * | 2012-03-13 | 2012-07-18 | 清华大学 | Information storage element with non-volatile electric field regulating magnetization intensity |
| CN103367637A (en) * | 2013-07-16 | 2013-10-23 | 河北师范大学 | Multi-dimensional storage capable of simultaneously regulating and controlling electrical property and magnetism of dielectric layer |
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2008
- 2008-04-11 CN CN2008101038123A patent/CN101251997B/en not_active Expired - Fee Related
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| CN102593348A (en) * | 2012-03-13 | 2012-07-18 | 清华大学 | Information storage element with non-volatile electric field regulating magnetization intensity |
| CN103367637A (en) * | 2013-07-16 | 2013-10-23 | 河北师范大学 | Multi-dimensional storage capable of simultaneously regulating and controlling electrical property and magnetism of dielectric layer |
| CN106947959A (en) * | 2016-01-06 | 2017-07-14 | 中国科学院上海硅酸盐研究所 | A kind of lanthanum calcium manganese oxygen-lanthanum strontium manganese oxygen-strontium titanate lead composite film and preparation method thereof |
| CN106947959B (en) * | 2016-01-06 | 2019-03-19 | 中国科学院上海硅酸盐研究所 | A kind of lanthanum calcium manganese oxygen-lanthanum strontium manganese oxygen-strontium titanate lead composite film and preparation method thereof |
| CN105789432A (en) * | 2016-04-17 | 2016-07-20 | 重庆科技学院 | Micro-nano magnetoelectric coupler based on ferroelectric film and self-assembly magnetic nanometer particle structure |
| CN105789432B (en) * | 2016-04-17 | 2018-10-23 | 重庆科技学院 | A kind of micro-nano magnetoelectric coupling device based on ferroelectric thin film and self assembly magnetic nanoparticle structure |
| CN107134524A (en) * | 2017-05-27 | 2017-09-05 | 西安交通大学 | A kind of method that use atomic layer deposition method prepares the three-dimensional many iron hetero-junctions of fin |
| CN107134524B (en) * | 2017-05-27 | 2020-03-13 | 西安交通大学 | Method for preparing fin type three-dimensional multiferroic heterojunction by adopting atomic layer deposition method |
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