CN101251409A - Vibration sensor with InSb-NiSb magnet sensitive resistor - Google Patents
Vibration sensor with InSb-NiSb magnet sensitive resistor Download PDFInfo
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- CN101251409A CN101251409A CNA2008101040246A CN200810104024A CN101251409A CN 101251409 A CN101251409 A CN 101251409A CN A2008101040246 A CNA2008101040246 A CN A2008101040246A CN 200810104024 A CN200810104024 A CN 200810104024A CN 101251409 A CN101251409 A CN 101251409A
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Abstract
The invention belongs to the electric element sensor field which relates to a vibration sensor produced by utilizing the InSb-NiSb magneto-resistance effect principle. The vibration sensor is widely applicable to the long-term vibration monitoring and protection of instruments and equipment in the industries of electric power, petroleum, chemical engineering, metallurgy, communication, architecture, military, etc., particularly applicable to a systematic online automatic detection and alarm system. The vibration sensor consists of an InSb-NiSb magneto-resistance piece, a permanent magnet, an electronic processing circuit board, a fixed support, a casing, an elastic film piece, an outgoing lead, etc. When a tested body vibrates up and down, the magnetic film piece in the sensor is enabled to move up and down, thereby enabling the distance between the magnet and the magneto-resistance piece to consequently change. The magnetic flux passing through the magneto-resistance piece also changes to produce a corresponding electrical signal which is to be processed by the electronic circuit. Finally a voltage waveform signal corresponding to the vibration amplitude and frequency is outputted and the aim of vibration measurement is achieved. The sensor smoothes the way for the follow-up circuit material and computer analysis with good frequency characteristics, high sensitivity, simple structure, big original signal and low degree of distortion.
Description
Technical field
The invention belongs to the electrical equipment sensor field; relate to the vibration transducer that a kind of InSb-NiSb of utilization mistor effect principle is made; be widely used in the industries such as electric power, oil, chemical industry, metallurgy, traffic, building, war industry the long-term vibration monitoring and the protection of instrument, equipment, be used in particular for system's online automatic detection warning system.
Background technology
Vibration transducer is commonly used at present divides two kinds: a kind of is magneto-electric, and a kind of is piezoelectric type.Magneto-electric is to utilize vibration to cause moving coil or soft or hard magnetic material movement, movable body cutting magnetic line and magnetic flux is changed in time, thus portion produces induction electromotive force in coil, promptly produces electric signal; Piezoelectric type is to utilize piezoelectric effect, and when piezoelectric element was vibrated, the effect that inner mass is subjected to external force produced acceleration movement, and piezoelectric element is applied external force, thereby at the inner electric signal that produces of piezoelectric element.These existing vibration transducers are used all the certain frequency size and the restriction of amplitude size.Magneto-electric (as 10HZ time) when vibration frequency is very low, the induction electromotive force that is produced is just minimum, and is with regard to the production distortion, insensitive in the low frequency level.And piezoelectric type during low and very high frequency and amplitude hour, all can produce distortion in frequency.
Summary of the invention
Purpose of the present invention will be utilized the mistor effect principle exactly, and a kind of mistor type vibration transducer that can truly, accurately reflect vibration frequency and amplitude size is provided.
The InSb-NiSb material that the present invention utilized is a kind of functional composite material, is the needle-like NiSb crystal that utilizes Bridgeman crystallographic orientation technology to go out to be arranged in parallel in the matrix growth inside of III-V family Semiconductor InSb.Because NiSb is an intermetallic compound, has good electrical conductivity, is equivalent to the short-circuiting bar that has been arranged in parallel on semiconductor substrate.When short-circuiting bar, magnetic field and electric current three are orthogonal, these short-circuiting bar short circuits the electric field of ear suddenly that under magnetic field, produces in the semiconductor substrate.Make the charge carrier of material internal be subjected to the continuous deflection of Lorentz force under the effect in magnetic field, the motion path of charge carrier strengthens, and resistance increases on the macroscopic view.The mistor element that the present invention is used, under zero magnetic field and 3 kilogauss magnetic fields, resistivity can increase more than 3 times.
A kind of InSb-NiSb mistor type vibration transducer is by electronic processing circuit plate 1, permanent magnet 2, mistor sheet 3, draw lead 4, support 5, shell 6, elastic thin film 8 and form.The mistor sheet is installed or is welded on the electronic processing wiring board 1.Electronic processing wiring board 1 is fixed on the mounting bracket 5 (metal or plastics).Draw lead 4 and draw, be power supply input and signal output usefulness from electronic processing wiring board 1.Mistor sheet 3 usefulness InSb-NiSb or InSb-In or other mistor element are made, and permanent magnet 2 is selected materials such as neodymium iron boron, strontium ferrite, SmCo for use, and total is protected with shell 6 (selecting metal or plastics).When measured body produces up-down vibration, the thin magnetic film sheet that can cause sensor internal moves up and down, thereby the distance between magnet and the mistor sheet is changed thereupon, magnetic flux by mistor also changes simultaneously, produce corresponding electric signal, handle through electronic circuit, output and Oscillation Amplitude, the corresponding voltage waveform signal of frequency reach the purpose of measuring vibrations again.The structure of Fig. 1 is convenient for measuring the vibration of low frequency, and the structure of Fig. 2 is more suitable for measuring the vibration of middle and high frequency.Adopt the noncontact mounting means of Fig. 3, the vibration displacement value that also can non-cpntact measurement goes out object, when measured body (requirement is magnetic conductor or permanent magnet) when direction as shown is moved, can make and have the mistor resistance generation respective change that causes permanent magnet partially, thereby the generation electric signal can obtain the voltage signal with vibration displacement similar frequencies and amplitude after the via line plate is handled.
Distinguishing feature of the present invention is: owing to adopt mistor is sensitive element, and its performance is that resistivity changes with the magnetic field size variation, and in other words, the resistance sizes of itself is by the magnetic flux size decision of passing through.The vibration transducer of making thus, frequency characteristic is good, and is highly sensitive, can distortion under the vibration of extremely low frequency and extremely high frequency yet, can reflect the frequency and the amplitude size cases of vibration really.It is simple in structure, and original signal is big, and degree of distortion is little, is convenient to subsequent conditioning circuit material and Computer Analysis.
Description of drawings
Fig. 1: the vibration transducer of beam type
Fig. 2, the fixed vibration transducer in two ends
Fig. 3, the non-contact type vibration transducer
Embodiment
Elastic thin film 8 two ends are all fixing on support 5.Permanent magnet 2 is placed on the middle part, still keeps certain interval to face mistor sheet 3.Select strontium ferrite permanent magnet body 2 for use, fixing means is fixed with mechanical system.Mistor sheet 3 is used InSb-In, is placed on the position of permanent magnet 2 with certain interval.The mistor sheet is welded on the electronic processing wiring board 1.Electronic processing wiring board 1 is fixed on to be installed on the plastic stent 5.Draw lead 4 and draw, be power supply input and signal output usefulness from electronic processing wiring board 1.Total plastic casing 6, this structural vibrations sensor is particularly suitable for the higher occasion of vibration frequency.
What adopt is that measured body (permeability magnetic material) is installed with the non-contacting mode of sensor.Fixed a biasing permanent magnet 2 in the back of mistor 3.The mistor sheet is close to shell and is installed.When measured body (permeability magnetic material) produced the up-down vibration displacement, the magnetic flux by mistor still can change, and can cause resistance variations equally, handles by electronic circuit, can obtain reflecting with vibrate virtual condition similar exchange analog voltage signal.
Claims (5)
1. an InSb-NiSb mistor type vibration transducer is characterized in that by electronic processing circuit plate (1), permanent magnet (2), mistor sheet (3), draws lead (4), support (5), shell (6), forms; The mistor sheet is installed or is welded on the electronic processing wiring board (1); Electronic processing wiring board (1) is fixed on metal or the plastic mounting bracket (5); Draw lead (4) and draw, be power supply input and signal output usefulness from electronic processing wiring board (1); Mistor sheet (3) is made with the InSb-NiSb material, and total is protected with metal or plastic casing (6); When measured body produces up-down vibration, the thin magnetic film sheet that can cause sensor internal moves up and down, thereby the distance between magnet and the mistor sheet is changed thereupon, magnetic flux by mistor also changes simultaneously, produce corresponding electric signal, handle through electronic circuit, output and Oscillation Amplitude, the corresponding voltage waveform signal of frequency reach the purpose of measuring vibrations again.
2. a kind of according to claim 1 InSb-NiSb mistor type vibration transducer, it is characterized in that being provided with elastic thin film (8), elastic thin film's (8) one ends are fixed on the metal support (5), and the other end is fixed a permanent magnet (2), fixing means epoxy cement.
3. as a kind of InSb-NiSb mistor type vibration transducer as described in the claim 2, its feature elastic thin film (8) two ends are all gone up fixing at support (5), and permanent magnet (2) is placed on the middle part.
4. a kind of according to claim 1 InSb-NiSb mistor type vibration transducer, what it is characterized in that adopting is that the non-contacting mode of measured body and sensor is installed, fixed a biasing permanent magnet (2) in the back of mistor (3), the mistor sheet is close to shell and is installed; When measured body produced the up-down vibration displacement, the magnetic flux by mistor still can change, and can cause resistance variations equally, handles by electronic circuit, can obtain reflecting with vibrate virtual condition similar exchange analog voltage signal.
5. a kind of according to claim 1 InSb-NiSb mistor type vibration transducer is characterized in that mistor sheet (3) makes with the InSb-In material, and permanent magnet (2) is selected neodymium iron boron or strontium ferrite or samarium-cobalt material for use.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008101040246A CN101251409A (en) | 2008-04-14 | 2008-04-14 | Vibration sensor with InSb-NiSb magnet sensitive resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008101040246A CN101251409A (en) | 2008-04-14 | 2008-04-14 | Vibration sensor with InSb-NiSb magnet sensitive resistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101251409A true CN101251409A (en) | 2008-08-27 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2008101040246A Pending CN101251409A (en) | 2008-04-14 | 2008-04-14 | Vibration sensor with InSb-NiSb magnet sensitive resistor |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102243077A (en) * | 2010-04-21 | 2011-11-16 | 精工爱普生株式会社 | Vibration-type force detection sensor and vibration-type force detection device |
| CN102410872A (en) * | 2010-09-25 | 2012-04-11 | 许耿祯 | Non-contact vibration sensor device |
| CN104181330A (en) * | 2013-05-24 | 2014-12-03 | 北京嘉岳同乐极电子有限公司 | Acceleration sensor |
| CN105470383A (en) * | 2015-12-31 | 2016-04-06 | 江苏森尼克电子科技有限公司 | Magnetic-sensitive device with pre-embedded electrode and manufacturing process |
| CN110455401A (en) * | 2019-08-28 | 2019-11-15 | 江苏多维科技有限公司 | A kind of high sensitivity magnetic resistance sonic sensor and array apparatus |
| CN111122903A (en) * | 2020-01-09 | 2020-05-08 | 华中科技大学 | Self-powered electromagnetic motion perception sensor |
| CN112179478A (en) * | 2020-10-09 | 2021-01-05 | 重庆理工大学 | Cantilever type vibration sensor based on magneto-resistance effect |
-
2008
- 2008-04-14 CN CNA2008101040246A patent/CN101251409A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102243077A (en) * | 2010-04-21 | 2011-11-16 | 精工爱普生株式会社 | Vibration-type force detection sensor and vibration-type force detection device |
| CN102410872A (en) * | 2010-09-25 | 2012-04-11 | 许耿祯 | Non-contact vibration sensor device |
| CN102410872B (en) * | 2010-09-25 | 2012-12-19 | 许耿祯 | Non-contact vibration sensor device |
| CN104181330A (en) * | 2013-05-24 | 2014-12-03 | 北京嘉岳同乐极电子有限公司 | Acceleration sensor |
| CN105470383A (en) * | 2015-12-31 | 2016-04-06 | 江苏森尼克电子科技有限公司 | Magnetic-sensitive device with pre-embedded electrode and manufacturing process |
| CN110455401A (en) * | 2019-08-28 | 2019-11-15 | 江苏多维科技有限公司 | A kind of high sensitivity magnetic resistance sonic sensor and array apparatus |
| CN110455401B (en) * | 2019-08-28 | 2021-10-19 | 江苏多维科技有限公司 | High-sensitivity magnetoresistive acoustic wave sensor and array device |
| CN111122903A (en) * | 2020-01-09 | 2020-05-08 | 华中科技大学 | Self-powered electromagnetic motion perception sensor |
| CN112179478A (en) * | 2020-10-09 | 2021-01-05 | 重庆理工大学 | Cantilever type vibration sensor based on magneto-resistance effect |
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Open date: 20080827 |