CN101241968A - Device with photovoltaic effect and EL function - Google Patents
Device with photovoltaic effect and EL function Download PDFInfo
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- CN101241968A CN101241968A CN 200710063708 CN200710063708A CN101241968A CN 101241968 A CN101241968 A CN 101241968A CN 200710063708 CN200710063708 CN 200710063708 CN 200710063708 A CN200710063708 A CN 200710063708A CN 101241968 A CN101241968 A CN 101241968A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E10/549—Organic PV cells
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Abstract
A device which has dual functions of photovoltaic effect and electroluminescence is characterized in that the device comprises the following components: a substrate; a buffer layer which is manufactured on the substrate, can reduce the roughness of the substrate surface and form an excellent contact between the substrate and the active layer; an active layer which is manufactured on the buffer layer and can be taken as a photoelectric converting layer; an aluminum electrode which is manufactured on the active layer and collects electrons when is taken as the photovoltaic device and injects electrons when is taken as electroluminescent device.
Description
Technical field
The present invention relates to a kind of electrooptical device, especially relate to a kind of employing organic/inorganic composite material system and have the bulk heterojunction structure, and have the device of photovoltaic effect and EL function.
Background technology
Under certain electric field action, excited by corresponding electric energy and the luminescence phenomenon that produces is referred to as electroluminescence.Electroluminescence can be divided into inorganic EL and organic electroluminescent from the luminescent material angle.Inorganic electroluminescence device is extensive use, but still a lot of defectives are arranged, and is few as luminescent species, and particularly blue light material is rare; Efficient is lower than ordinary incandescent lamp; Shortcomings such as energy consumption height.The research of organic electroluminescent is started late, but has huge attraction, because it has following advantage: the material range of choice is wide, can realize panchromatic demonstration, driving voltage is low, solidifies entirely and active illuminating, and the visual angle is wide, response speed is fast, preparation process is simple, and cost is low, ultrathin membrane, in light weight, can be produced on the flexible substrate.It can overcome, and the visual angle of liquid crystal display is little, and response speed is slow, and high voltage and the few shortcoming of inorganic EL kind that plasma shows become the strong competitor of the flat panel display that replaces conventional cathode ray picture tube.But the efficient of organic electroluminescence device and life-span are still waiting to improve.Because its hole injection efficiency height, and electron injection efficiency is low, has therefore limited the raising of its luminous efficiency for the conjugated polymer electroluminescent device.In order to improve its electron injection efficiency and device lifetime, need improve its material and structure to polymer electroluminescent device, for example increase electronics injection material etc.
Generally, separately carry out for photovoltaic effect and electroluminescent research.But for the solar cell of organic/inorganic composite material system, the generation of its photovoltaic performance is because the photoinduction electron transfer.Experimental result show when light from tin indium oxide (ITO) glass one side irradiation, can produce tangible photovoltaic effect, when with the ito transparent electrode being anode when adding forward bias, can observe bright electroluminescence.This explanation photovoltaic device and electroluminescent device can be integrated in same device.Report for the device of the bulk heterojunction structure of the zinc oxide that has photovoltaic effect and electroluminescent properties simultaneously (ZnO)/Conjugated Polymer Composites system occurs as yet.
Summary of the invention
The objective of the invention is to, a kind of device with photovoltaic effect and EL function is provided.The present invention has adopted the organic/inorganic composite material system, and inorganic nano material ZnO is incorporated in the device, during as photovoltaic device, has improved electron mobility and exciton dissociation efficient, thereby has improved energy conversion efficiency; During as electroluminescent device,, therefore solved the polymer electroluminescent device electronics and injected difficult shortcoming because ZnO has reduced the electronics injection barrier.
A kind of device with photovoltaic effect and EL function of the present invention is characterized in that, comprising:
One substrate;
One resilient coating, this resilient coating is produced on the substrate, can reduce the roughness of substrate surface, and makes substrate and active layer form excellent contact;
One active layer, this active layer is produced on the resilient coating, can be used as photoelectric conversion layer;
Collect electronics when one aluminium electrode, this aluminium electrode are produced on the active layer and use as photovoltaic device, inject electronics during as electroluminescent device.
Wherein substrate is ito glass or FTO glass.
Wherein resilient coating be sulfonated polystyrene mix poly-3,4-vinyl dioxy thiophene.
Wherein active layer is the mixed film of nanocrystalline and conjugated polymer 2-methoxyl group-5-(3 ', 7 '-dimethyl octyloxy) phenylenevinylene of ZnO or poly-3 hexyl thiophenes.
When wherein this device is as electroluminescent device, the ito glass injected hole; During as photovoltaic device, ito glass is for collecting the hole.
When wherein this device was as electroluminescent device, the aluminium electrode injected electronics; During as photovoltaic device, the aluminium electrode is collected electronics.
The invention has the beneficial effects as follows: this device can be as photovoltaic device when illumination is arranged, at 85mW/cm
2Light intensity under open circuit voltage be 0.84V, short-circuit current density is 3.46mA/cm
2, fill factor, curve factor is 0.42, energy conversion efficiency is 1.47%; It can also not use as electroluminescent device when having illumination, is about 560nm at the wavelength of electroluminescence peak position under the 3.5V-5.5V forward bias, and along with the increase of voltage, luminous intensity increases.
Description of drawings
For further specifying content of the present invention and characteristics, below in conjunction with accompanying drawing the present invention is done a detailed description, wherein:
Fig. 1 is the profile of device of the present invention;
Fig. 2 represents the current density-voltage curve as photovoltaic device;
Fig. 3 represents the electroluminescent spectrum of this device under forward bias.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing.
As shown in Figure 1, Fig. 1 is the schematic diagram with device architecture of photovoltaic effect and EL function provided by the invention.This device comprises a substrate 10; One resilient coating 20, this resilient coating 20 is produced on the substrate 10, can reduce the roughness of substrate surface, and makes substrate and active layer form excellent contact; One active layer 30, this active layer 30 is produced on the resilient coating 20, can be used as photoelectric conversion layer; One aluminium electrode 40, this aluminium electrode 40 is produced on the active layer 30 collects electronics, perhaps injects electronics.
Described substrate 10 is a nesa coating, such as tin indium oxide (ITO) or mix tin oxide (FTO) glass of fluorine.When using as photovoltaic device, this substrate is as sensitive surface, and the collection hole; During as electroluminescent device, this substrate is as light emitting surface, and the collection electronics.
It above the substrate 10 resilient coating 20 that adopts the spin coating proceeding preparation.This resilient coating be sulfonated polystyrene mix poly-3,4-vinyl dioxy thiophene (PEDOT:PSS) can reduce the roughness of substrate surface, and makes substrate and active layer form excellent contact.Rotating speed when regulating spin coating can be regulated the thickness of PEDOT:PSS, and generally described buffer layer thickness is between 30-100nm.
It above the resilient coating 20 active layer 30 that adopts the spin coating proceeding preparation.This active layer is the mixed film of nanocrystalline and conjugated polymer 2-methoxyl group-5-(3 ', 7 '-dimethyl octyloxy) phenylenevinylene (MDMO-PPV) of ZnO or poly-3 hexyl thiophenes (P3HT).This active layer is a photoelectric conversion layer, and ZnO and MDMO-PPV or P3HT will form the excellent contact interface, could guarantee transporting of electric charge.Rotating speed when regulating spin coating can be regulated the thickness of active layer, and generally described active thickness is between 60-200nm.
It above the active layer 30 the aluminium electrode 40 of vacuum evaporation.This device is during as electroluminescent device, and aluminium electrode 40 injects electronics; During as photovoltaic device, aluminium electrode 40 is collected electronics.
Experimental example:
1. the nanocrystalline technology of synthetic electron transport material ZnO is as follows: the 2.95g zinc acetate is dissolved in 60 ℃ the 125ml methyl alcohol, in subsequently 10 minutes, adds the methanol solution (1.57g KOH, 82%, methyl alcohol 65ml) of KOH under continuous stirring condition.Remove heating and stirring after in 2 hours 15 minutes, centrifugation is cleaned nano particle with methanol solution, at last centrifugalled ZnO nano particle is dissolved in the chlorobenzene solvent.
2. adopt ito glass as substrate, with the solution sulfonated polystyrene of rotating speed spin coating one deck resilient coatings 20 of 2400 rev/mins mix poly-3,4-vinyl dioxy thiophene (PEDOT:PSS) solution forms resilient coating 20.Air drying 12 hours, moisture is fully volatilized then.
3. preparation MDMO-PPV chlorobenzene solution mixes with the chlorobenzene solution of ZnO then and carries out ultrasonic wave and disperse, and the volumn concentration of ZnO is 26%.
4. uniform ZnO:MDMO-PPV or ZnO:P3HT solution are spin-coated on the substrate that is covered with resilient coating, rotating speed is between 1500 rev/mins.
5. last vacuum evaporation aluminium electrode 40.
This device can be as photovoltaic device when illumination is arranged, as shown in Figure 2, and at 85mW/cm
2Light intensity under open circuit voltage be 0.84V, short-circuit current density is 3.46mA/cm
2, fill factor, curve factor is 0.42, energy conversion efficiency is 1.47%; As shown in Figure 3, when not having illumination, be about 560nm, and along with the increase of voltage, luminous intensity increase at the wavelength of electroluminescence peak position under the 3.5V-5.5V forward bias.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (6)
1. the device with photovoltaic effect and EL function is characterized in that, comprising:
One substrate;
One resilient coating, this resilient coating is produced on the substrate, can reduce the roughness of substrate surface, and makes substrate and active layer form excellent contact;
One active layer, this active layer is produced on the resilient coating, can be used as photoelectric conversion layer;
Collect electronics when one aluminium electrode, this aluminium electrode are produced on the active layer and use as photovoltaic device, inject electronics during as electroluminescent device.
2. the device with photovoltaic effect and EL function as claimed in claim 1 is characterized in that, wherein substrate is ito glass or FTO glass.
3. the device with photovoltaic effect and EL function as claimed in claim 1 is characterized in that, wherein resilient coating be sulfonated polystyrene mix poly-3,4-vinyl dioxy thiophene.
4. the device with photovoltaic effect and EL function as claimed in claim 1, it is characterized in that, wherein active layer is the mixed film of nanocrystalline and conjugated polymer 2-methoxyl group-5-(3 ', 7 '-dimethyl octyloxy) phenylenevinylene of ZnO or poly-3 basic thiophene.
5. the device with photovoltaic effect and EL function as claimed in claim 2 is characterized in that, when wherein this device is as electroluminescent device, and the ito glass injected hole; During as photovoltaic device, ito glass is for collecting the hole.
6. the device with photovoltaic effect and EL function as claimed in claim 1 is characterized in that, when wherein this device was as electroluminescent device, the aluminium electrode injected electronics; During as photovoltaic device, the aluminium electrode is collected electronics.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200710063708 CN101241968A (en) | 2007-02-07 | 2007-02-07 | Device with photovoltaic effect and EL function |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200710063708 CN101241968A (en) | 2007-02-07 | 2007-02-07 | Device with photovoltaic effect and EL function |
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| CN101241968A true CN101241968A (en) | 2008-08-13 |
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| CN 200710063708 Pending CN101241968A (en) | 2007-02-07 | 2007-02-07 | Device with photovoltaic effect and EL function |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104064690A (en) * | 2014-06-27 | 2014-09-24 | 北京科技大学 | Organic light emitting diode with double-layer electron transport layer and preparation method thereof |
| CN104409650A (en) * | 2014-12-01 | 2015-03-11 | 京东方科技集团股份有限公司 | Light emitting device and manufacturing method thereof as well as display device and optical detection device |
-
2007
- 2007-02-07 CN CN 200710063708 patent/CN101241968A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104064690A (en) * | 2014-06-27 | 2014-09-24 | 北京科技大学 | Organic light emitting diode with double-layer electron transport layer and preparation method thereof |
| CN104064690B (en) * | 2014-06-27 | 2016-08-17 | 北京科技大学 | There is Organic Light Emitting Diode of double-decker electron transfer layer and preparation method thereof |
| CN104409650A (en) * | 2014-12-01 | 2015-03-11 | 京东方科技集团股份有限公司 | Light emitting device and manufacturing method thereof as well as display device and optical detection device |
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