CN101237121B - Distributed feedback injection amplification semiconductor laser - Google Patents
Distributed feedback injection amplification semiconductor laser Download PDFInfo
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- CN101237121B CN101237121B CN2008100466646A CN200810046664A CN101237121B CN 101237121 B CN101237121 B CN 101237121B CN 2008100466646 A CN2008100466646 A CN 2008100466646A CN 200810046664 A CN200810046664 A CN 200810046664A CN 101237121 B CN101237121 B CN 101237121B
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Abstract
The invention discloses a distributed feedback injection amplifying semiconductor laser, consisting of a main laser, a first light isolator, a taper laser amplifier, a second light isolator, a tiny light exploring laser power stabilization system and a laser shaping system, wherein, the main laser adopts a distributed feedback semiconductor laser tube, the collimated laser beam is injected into a taper laser amplifying chip passing through the first light isolator, the amplified laser adopts the beam splitting technique passing through the second light isolator, an electrophotonic detector detects the fluctuation of power of the amplified laser, the error signal is sent to a current control interface of the taper laser amplifier through a feedback circuit, the power stability of the laser is outputted after the error signal is amplified by a reverse feedback mechanism, the light outputs the collimated Gaussian beam through the laser shaping system. The distributed feedback injection amplifying semiconductor laser has compact structure, convenient adjustment, wide and narrow laser rays, high power, good stability and strong practicability.
Description
Technical field
The present invention relates to a kind of semiconductor laser, more specifically relate to a kind of distributed feedback injection amplification semiconductor laser, this
Invention is applicable to fields such as laser cooling, atom imprison, laser spectroscopy, nonlinear optics.
Background technology
Einstein in 1917 have proposed the notion of stimulated radiation, the 1950's, Soviet Union scientist Ba Suofu and Pu Luohuoluofu have delivered the paper of " realizing the suggestion of three-level population inversion and semiconductor laser ", for the appearance of laser provides theoretical foundation.In nineteen sixty, breadboard plum sieve of California Hughes has been developed into first ruby laser in the world, he uses ruby crystal as luminescent material, with the pumping source of the very high xenon flash lamp of luminous density as laser, obtained the historical first bundle laser through for many years effort, its wavelength is 694nm.In China, first ruby laser succeeded in developing in Changchun Inst. of Optics and Fine Mechanics, Chinese Academy of Sciences in 1961, and after this laser technology of China has obtained development rapidly, and obtained using widely in every field.At different field laser commonly used solid state laser, liquid laser, gas laser, fiber laser and semiconductor laser etc. are arranged at present.
Semiconductor laser is to be a class laser of operation material with the semi-conducting material, also claims semiconductor laser diode.The particularity of semi-conducting material has determined semiconductor laser that the advantage of self is arranged, and is characterized in that volume is little, efficient is high, line width, good stability, single mode operation.According to the developing history and the development level of semiconductor laser, it can be divided into three stages roughly, i.e. homojunction semiconductor laser stage, general heterostructure semiconductor laser stage and quantum-well semiconductor laser stage.The laser that the homojunction semiconductor laser is made up of single semi-conducting material, adopt two kinds of identical semi-conducting materials of energy gap to constitute light-emitting junction, the parallel end face that adopts two polishings is as resonant cavity, the end face of polishing has formed the resonant cavity that is equivalent to small-sized Fabry-Perot (F-P) interferometer perpendicular to the P-N junction plane.Heterostructure semiconductor laser constitutes light-emitting junction by two kinds of different semi-conducting materials, require the lattice constant of these two kinds of semi-conducting materials to be complementary, the potential barrier that the difference of the energy gap of heterojunction causes is injected the foundation that specific characteristic helps population inversion to the restriction of injection charge carrier and the height of heterojunction, the difference of two kinds of material refractive indexes provides the possibility of making fiber waveguide, thereby has reduced the loss of light beyond resonant cavity.Double hetero-structure laser provides clear and definite dielectric waveguide and become can be at the injection laser of room temperature continuous operation.Consider from application facet, since the seventies in last century the single-mode laser of some different structure characteristics has appearred in succession, such as distributed feedback semiconductor laser (DFB), distributted bragg reflector semiconductor laser (DFR), cleavage coupled-cavity semiconductor lasers etc.Quantum well is that a kind of active layer with narrow band gap is clipped between the wide bandgap semiconductor materials and a kind of layer structure of forming, and the thickness of its active layer also can be regarded a kind of heterogeneous semiconductor junction structure as less than the de Broglie wavelength of electronics.Consider that from application point therefore some advantages such as it has, and threshold current is low, power output is high, frequency response is good, line width and temperature stability are good are paid close attention to by people in the field of study.
In cold atom Physical Experiment and related application, the laser of line width, power height, good stability, Miniaturizable presses for.Generally, the semiconductor laser tube of F-P type all has the restriction of live width, all can not satisfy experimental requirements in application such as cold atom experiment, laser spectroscopy and nonlinear optics.Therefore the exocoel feedback semiconductor laser has appearred, it be utilize grating to feed back to increase laser cavity long, thereby press the live width of narrow laser, its type has Litrrow type and Littman type, and typical product has the Toptica company of Germany and the Related product of U.S. Newfocus.Though the live width of semiconductor laser that the design of exocoel has effectively been pressed narrow, but the introducing of exocoel has inevitably increased the mechanical instability of semiconductor laser, in experiment, utilize saturated absorption spectral line and other method to be locked usually and solve its long term stability problem.The distributed feedback semiconductor laser tube has solved the problem of laser linewidth and long-time stability effectively, it is integrated in grating the inside of laser tube, both increased the effective cavity length of semiconductor laser tube, reduced again because of introducing the mechanical instability that exocoel increases, solve simultaneously the miniaturization issues of laser again, can satisfy the related experiment requirement of cold atom.But the power normal conditions of such laser tube output are not very high, to output wavelength near the laser tube power output the 780nm about 80mW, so the amplification of laser is also had exigence.Usually the scheme that solves is to utilize taper laser to amplify chip it is amplified, and the Related product that typical product has German Toptica company to produce is such as TA100.It is with the exocoel feedback semiconductor laser of Litrrow type as injecting light source, amplify chip it amplified by injecting taper laser behind the optical isolator.But, the strictness that this product is suitable to the precision of the Current Control of taper laser amplifier, the fluctuation of electric current directly affects the stability of amplifying laser.In our design, realize beam splitting system by beam splitter, take the electric current of taper laser amplifier is carried out FEEDBACK CONTROL, both reduced designing requirement to big current control circuit, laser stability after having guaranteed again to amplify, Machine Design offers the enclosed environment that amplifies chip, though prevent that dust from entering so that bad chip, multidimensional is regulated the quality that has guaranteed the amplifying laser output facula, and the design of ceramic electrode prevents the electric current punch-through so that guarantees that bigger electric current amplifies chip power supply to taper laser, avoided the electrostatic problem in the welding simultaneously, our design has simple in structure, easy to adjust, realize characteristics such as power stability easily.
Summary of the invention
The objective of the invention is to be to provide a kind of distributed feedback injection amplification semiconductor laser, adopt the main laser of distributed feed-back (DFB) semiconductor laser tube as the taper laser amplifier, by the aspherical mirror collimated laser beam, the live width and the power problem of semiconductor laser have been solved effectively, adopt Glan Taylor prism and polarization apparatus to form optical isolator, solved the laser multimode problem that causes by bulk of optical feedback effectively, adopt aspherical mirror that the collimated light beam of distributed feedback semiconductor laser is focused on and obtain powerful laser beam after taper laser amplifies chip, with aspherical mirror the laser beam after amplifying is collimated, photodetector is used for surveying faint light and carries out power stability to realize current feedback, obtains the Gaussian beam of sub-circular after to its shaping with cylindrical mirror.This laser structure compactness, laser rays width, the power height, good stability, practical.
In order to achieve the above object, the present invention is by the following technical solutions:
A kind of distributed feedback injection amplification semiconductor laser, it comprises main laser, first optical isolator, the taper laser amplifier, second optical isolator, six parts of faint light detection laser power stability system and laser shaping system are formed, more specifically comprise the current temperature control circuit, main laser current temperature control interface, taper laser amplifier current temperature control interface, the main laser base, main laser is adjusted seat, the thermoelectric cooling package module, the distributed feedback semiconductor laser tube, the main laser collimating lens is adjusted seat, the main laser collimating lens, the optical isolator base, polarization apparatus, the Glan Taylor prism, taper laser amplifier base, taper laser amplifies chip pad, the thermoelectric cooling piece, thermistor, taper laser amplifier shell, taper laser amplifier input condenser lens is adjusted seat, taper laser amplifier input condenser lens, taper laser amplifies chip, taper laser amplifier output collimating lens, taper laser amplifier output collimating lens is adjusted seat, beam splitter, photodetector, cylindrical mirror base and cylindrical mirror, the current temperature control circuit links to each other with taper laser amplifier current temperature control interface with main laser current temperature control interface, main laser adopts distributed feedback semiconductor laser, main laser is adjusted seat and is linked to each other with the main laser base with main laser collimating lens adjustment seat, the distributed feedback semiconductor laser tube be fixed on main laser after the thermoelectric cooling package module links to each other and adjust on the seat, the main laser collimating lens is adjusted seat with the main laser lens and is linked to each other, Glan Taylor prism and polarization apparatus are fixed on the optical isolator base after being connected to form optical isolator, the thermoelectric cooling piece links to each other with taper amplifying laser device base with taper amplifying laser device shell, taper amplifying laser device adopts taper laser to amplify chip, taper amplifying laser device base links to each other with the thermoelectric cooling piece, taper laser amplifier input condenser lens is adjusted seat, taper laser amplifier output collimating lens is adjusted seat and is linked to each other with the thermoelectric cooling piece with taper laser amplifier base, taper laser amplifies chip and links to each other with taper laser amplifier base with thermistor, taper laser amplifier input condenser lens is adjusted seat with taper laser amplifier input condenser lens and is linked to each other, taper amplifying laser device output collimating lens is adjusted seat with taper laser amplifier output collimating lens and is linked to each other, and the electrode that taper laser amplifies chip links to each other with the current temperature control port by ceramic electrode; Faint light detection laser power stability system adopts beam splitter and photodetector; The output laser of main laser injects the taper laser amplifier after through first optical isolator, again through the Current Control interface of faint light detection laser power stability system feedback to the taper laser amplifier, output collimates Gaussian beam after the light process laser shaping system behind amplifying laser process light second isolator.The input of taper amplifying laser device, the output lens are imported with taper amplifying laser device respectively, the output lens are adjusted seat and are linked to each other, the input of taper amplifying laser device, the output lens are adjusted seat and are linked to each other with the thermoelectric cooling piece with taper laser amplifier base, taper amplifying laser chip links to each other with taper amplifying laser device shell with thermistor, the cylindrical mirror base links to each other with cylindrical mirror, the output laser of main laser is through injecting taper amplifying laser device behind the optical isolator, laser after the amplification passes through beam splitter through behind the optical isolator, photodetector is surveyed weak laser, and to carry out Feedback of Power stable, the Gaussian beam that most of polishing shape is obtained collimating with cylindrical mirror.
Main laser comprises the distributed feedback semiconductor laser tube, the thermoelectric cooling package module, main laser is adjusted seat, main laser collimating lens and main laser collimating lens are adjusted seat, the distributed feedback semiconductor laser tube links to each other with the thermoelectric cooling package module, thermoelectric cooling package module and main laser are adjusted the seat position of conciliation about it that link to each other, main laser collimating lens and main laser collimating lens are adjusted the seat demodulator position up and down that links to each other, the position of main laser collimating lens and distributed feedback semiconductor laser tube light emitting end surface is by regulating before and after the collimating lens, regulate the relative position of distributed feedback semiconductor laser tube and main laser collimating lens, the Gaussian beam that obtains collimating.The distributed feedback semiconductor laser tube is contained in thermoelectric cooling package module (inner integrated thermoelectric cooling piece and thermistor) the inside, the Current Control port of distributed feedback semiconductor laser tube, the control port of thermoelectric cooling package module (having comprised the electrode of thermoelectric cooling piece and the electrode of thermistor) links to each other with the current temperature control port of main laser, the thermoelectric cooling package module is fixed on main laser and adjusts on the seat, main laser adjustment seat is connected on the main laser base about with four screws, aspherical mirror (main laser collimating lens) is fixed on the main laser collimating lens and adjusts on the seat, main laser collimating lens adjustment seat is connected to up and down on the main laser base with four screws, left and right adjusting can be come by main laser adjustment seat in the position of distributed feedback semiconductor laser, up-down adjustment can be come by main laser collimating lens adjustment seat in the position of aspherical mirror, adjust seat position up and down by position and the main laser collimating lens adjusted about main laser adjustment seat, the end face and the non-concave-sphere that guarantee the distributed feedback semiconductor laser tube are coaxial, to guarantee the quality of laser facula, aspherical mirror also can be regulated to the distance of distributed feedback semiconductor laser light emitting end surface, to guarantee the collimation of laser output beam, the Gaussian beam that obtains collimating behind the temperature of connection main laser and the current control circuit.
Optical isolator is made up of optical isolator base, polarization apparatus, Glan Taylor prism, two Glan Taylor prism are placed on the two ends of polarization apparatus respectively, the polarization direction of the polarization direction of first Glan Taylor prism and main laser laser beam is consistent, and the polarization direction of the polarization direction of second Glan Taylor prism and first Glan Taylor prism in angle of 45 degrees.
The taper laser amplifier is by taper laser amplifier base, taper laser amplifies chip pad, the thermoelectric cooling piece, thermistor, taper laser amplifier shell, taper laser amplifier input condenser lens is adjusted seat, taper laser amplifier input condenser lens, taper laser amplifies chip, taper laser amplifier output collimating lens, seat adjusted by taper laser amplifier output collimating lens and ceramic electrode is formed, the thermoelectric cooling piece amplifies chip pad with taper laser amplifier base and taper laser and links to each other, thermistor amplifies chip with taper laser and links to each other with the current temperature control port by ceramic electrode, the collimation laser of main laser output injects taper laser amplification chip after by taper laser amplifier input condenser lens, laser beam after the amplification collimates with taper laser amplifier output collimating lens, and taper laser amplifier input condenser lens links to each other with taper laser amplifier shell with taper laser amplifier output collimating lens and regulates the relative position that amplifies chip with taper laser.Taper laser amplifies chip and is fixed on the C-Mount seat of standard, the current controling end that taper laser amplifies chip links to each other with taper laser amplifier current temperature control port, the C-Mount seat of standard is fixed on the base of taper laser amplifier shell with the screw of M2, thermistor also is fixed on the base of taper laser amplifier shell, the two ends of thermistor link to each other with taper laser amplifier current temperature control port, the electrode of chip is by ceramic electrode and the side that is fixed on taper laser amplifier shell after taper laser amplifier current temperature control port links to each other, taper laser amplifier shell links to each other with the thermoelectric cooling piece, the thermoelectric cooling piece links to each other with taper amplifier base, the two ends of thermoelectric cooling piece link to each other with taper laser amplifier current temperature control port, taper laser amplifier input condenser lens is fixed on taper laser amplifier input condenser lens and adjusts on the seat, taper laser amplifier input condenser lens adjustment seat links to each other with taper laser amplifier shell with four screws up and down with about four screw, the relative taper laser of taper laser amplifier input condenser lens amplifies the position of chip can left and right sides up-down adjustment, the chip of the relative taper laser amplification of condenser lens simultaneously input end face front-back direction also can be regulated, focus on as much as possible with the collimated light beam of guaranteeing main laser on the input end face of taper laser amplification chip, taper laser amplifier output collimating lens is fixed on taper laser amplifier output collimating lens and adjusts on the seat, taper laser amplifier output collimating lens adjustment seat links to each other with taper laser amplifier shell with four screws up and down with about four screw, the relative taper laser of taper laser amplifier output collimating lens amplifies the position of chip laser output end face can left and right sides up-down adjustment, the front-back direction of the chip output of the relative taper laser amplification of collimating lens simultaneously face also can be regulated, to guarantee the collimating output laser beam that taper laser amplifies chip as much as possible.All adjusted design all are to adopt the mode of chute, to guarantee the sealing of chip.
The stability of laser realizes by faint light detection laser power stability system, laser beam after the amplification is divided into two bundles by beam splitter, feed back to the current temperature control circuit after the fluctuation of photodetector detection of optical power, carry out negative feedback control by electric current, obtain the laser beam of power stability the taper amplifier.The power stability of amplifying laser is realized by faint light detection laser power stability system, obtains extremely faint light with the beam splitter reflection, by photodetector the electric current of taper amplifier is carried out negative feedback control, has guaranteed the power stability of amplifying laser.
The laser shaping system adopts cylindrical mirror, vertical divergence angle and horizontal divergence angle that taper laser amplifies on the chip output face generally are unequal, therefore available cylindrical mirror carries out shaping to the laser beam that taper laser amplifies after chip amplifies, and obtains the Gaussian beam of sub-circular hot spot.
In topology layout, taper laser amplifier current temperature control port and distributed feedback semiconductor laser tube Current Control interface, thermoelectric cooling module controls end, taper laser amplifies the chip current control end, the thermistor two ends link to each other with the thermoelectric cooling piece, the laser of distributed feedback semiconductor laser tube output is collimated into Gaussian beam with aspherical mirror in the main laser, the collimated light beam of main laser injects the taper laser amplifier after through first optical isolator, influence the pattern and the stability of main laser with the reflector laser that prevents taper laser amplifier input end face, the main laser collimated light beam is focused on the input end face of taper laser amplification chip with taper laser amplifier input condenser lens, laser after the amplification with taper laser amplifier output collimating lens collimation after through second optical isolator, arrive amplification chip and distributed feedback semiconductor laser tube to prevent the laser-bounce in the subsequent optical path, realize laser power stability with photodetection, laser beam reshaping after amplifying is obtained the collimation Gaussian beam of sub-circular hot spot with cylindrical mirror.
The present invention compared with prior art has the following advantages:
1, adopts the main laser of distributed feedback semiconductor laser tube as the taper laser amplifier, the distributed feedback semiconductor laser tube feeds back semi-conductive grating with exocoel and is integrated in laser tube inside, has guaranteed the stability of grating when reducing the live width of F-P laser tube effectively.
2, the mode that adopts the position of the position of main laser adjustment seat left and right adjusting distributed feedback semiconductor laser tube and main laser collimating lens adjustment seat up-down adjustment collimating lens to combine, help in that to regulate distributed feedback semiconductor laser tube and collimating lens easy to operate when coaxial, guaranteed the accuracy in adjustment process, reduced requirement simultaneously machining.
3, adopt ceramic electrode to prevent that electric current punch-through so that the bigger electric current of assurance from amplifying chip power supply to taper laser, avoided the electrostatic problem of welding simultaneously.
4, adopt the photodetection reponse system to guarantee the power stability of amplifying laser.
5, adopt the input of taper laser amplifier, output to adjust seat, guaranteed the coaxiality that chip and taper laser amplifier output collimating lens are amplified in taper laser amplifier input condenser lens, taper effectively, guaranteed the beam quality of taper laser amplifier output beam, the sealing that adopts the mode of regulating in the chute to guarantee to amplify chip, the useful life of increase chip.This design helps having guaranteed the accuracy in adjustment process regulating distributed feedback semiconductor laser tube and the collimating lens handled easily when coaxial, has reduced the requirement to machining simultaneously.
6, this invention is simple in structure, and convenient the adjusting guaranteed the sealing of chip simultaneously.
Description of drawings
Fig. 1 is a kind of schematic diagram of distributed feedback injection amplification semiconductor laser.
Fig. 2 is the profile that a kind of main laser is adjusted seat.
Fig. 3 is the profile that a kind of main laser collimating lens is adjusted seat.
Fig. 4 is the profile that a kind of taper laser amplifies chip pad.
Fig. 5 is the profile that a kind of taper laser amplifier input condenser lens is adjusted seat.
Fig. 6 is the profile that a kind of taper laser amplifier output collimating lens is adjusted seat.
Wherein, A-main laser, B-first optical isolator, C-taper laser amplifier, D-second optical isolator, E-faint light detection laser power stability system, F-laser shaping system, 1-current temperature control circuit, 2-main laser current temperature control interface, 3-taper laser amplifier current temperature control interface, 4,4a, 4b-main laser base, the 5-main laser is adjusted seat, 6-thermoelectric cooling package module, 7-distributed feedback semiconductor laser tube, 8-main laser collimating lens is adjusted seat, 9-main laser collimating lens, 10,24-optical isolator base, 11, the 25-polarization apparatus, 12,13,26,27-Glan Taylor prism, 14-taper laser amplifier base, 15-taper laser amplifies chip pad, 16-thermoelectric cooling piece, the 17-thermistor, 18,18a, 18b, 18c, 18d, 18e, 18f-taper laser amplifier shell, 19-taper laser amplifier input condenser lens is adjusted seat, 20-taper laser amplifier input condenser lens, and 21-taper laser amplifies chip, 21a-taper laser amplifies chip carrier, 22-taper laser amplifier output collimating lens, 23-taper laser amplifier output collimating lens is adjusted seat, 28-cylindrical mirror base, the 29-cylindrical mirror, 30-collimating and correcting outgoing laser beam, 31a, 31b, 31c, the 31d-main laser is reconciled screw, 32a, 32b, 32c, 3d-main laser collimating lens is reconciled screw, 33a, 33b, 33c, 33d, 33e, 33f, 33g, 33h-taper laser amplifier input condenser lens is reconciled screw, 34a, 34b, 34c, 34d, 34e, 34f, 34g, 34h-taper laser amplifier output collimating lens is reconciled screw, 35-main laser collimating lens fixed screw, 36-taper laser amplifier input condenser lens fixed screw, 37-taper laser amplifier output collimating lens fixed screw, the 38-beam splitter, 39-photodetector, 40-ceramic electrode.
Embodiment
Below in conjunction with accompanying drawing the present invention is described in further detail:
According to Fig. 1 as can be known, the taper amplification semiconductor laser is made up of main laser A, the first optical isolator B, taper laser amplifier C, the second optical isolator D, the faint light detection laser power stability E of system and six parts of the F of laser shaping system.Main laser A comprises current temperature control interface 2, main laser base 4, main laser adjustment seat 5, thermoelectric cooling package module 6, distributed feedback semiconductor laser tube 7, main laser collimating lens adjustment seat 8, main laser collimating lens 9.The first optical isolator B comprises optical isolator base 10, Glan Taylor prism 12, polarization apparatus 11 and Glan Taylor prism 13.Taper laser amplifier C comprises that taper laser amplifier base 14, taper laser amplify chip pad 15, thermoelectric cooling piece 16, thermistor 17, taper laser amplifier shell 18, taper laser amplifier input condenser lens adjustment seat 19, taper laser amplifier input condenser lens 20, taper laser amplification chip 21, taper laser amplifier output collimating lens 22, taper laser amplifier output collimating lens adjustment seat 23.The second optical isolator D comprises lattice optical isolator base 24, Glan Taylor prism 26, polarization apparatus 25 and Glan Taylor prism 27.The faint light detection laser power stability E of system comprises beam splitter 38 and photodetector 39.The F of laser shaping system comprises cylindrical mirror base 28 and cylindrical mirror 29.
Distributed feedback semiconductor laser tube 7 is selected the LD-0780-0080-DFB-1 of German Toptica company for use, thermoelectric cooling module 6 is selected the Coldpack module (TO-3 encapsulation) of German Toptica company for use, main laser collimating lens 9 is selected the aspherical mirror of Thorlabs company for use, its model is C350TM-B, 4.5 millimeters of focal lengths, numerical aperture 4.1.As Fig. 1, Fig. 2 and shown in Figure 3, distributed feedback semiconductor laser tube 7 is contained in thermoelectric cooling module 6 the insides, thermoelectric cooling module 6 is fixed on main laser to be adjusted on the seat 5, the main laser base comprises 4,4a and 4b, on main laser base 4,4a and 4b, chute is arranged, main laser adjustment seat 5 is contained in the chute the inside of main laser base 4,4a and 4b, make things convenient for main laser adjust seat 5 about reconcile, can prevent that dust from entering distributed feedback semiconductor laser tube 7 simultaneously.As shown in Figure 2, on main laser base 4a, there are two main lasers to reconcile screw 31a and 31b, on main laser base 4b, there are two main lasers to reconcile screw 31c and 31d, reconcile screw 31a by reconciling main laser, 31b, 31c and 31d reconcile the position that main laser is adjusted seat about 5, thereby reconcile the position of distributed feedback semiconductor laser tube 7 relative main laser collimating lenses about 8.As shown in Figure 3, main laser collimating lens 9 is adjusted seat 5 with main laser and is linked to each other, on main laser base 4a and 4b, there are two main laser collimating lenses to reconcile screw 32a and 32b, on main laser base 4, there are two main laser collimating lenses to reconcile screw 32c and 32d, reconcile screw 32a by reconciling the main laser collimating lens, 32b, 32c and 32d reconcile the main laser collimating lens and adjust the position of seat about in the of 8, thereby reconcile distributed feedback semiconductor laser tube 7 positions of relative main laser collimating lens about in the of 8, thermoelectric cooling module 6 (Coldpack, the TO-3 encapsulation) electrode links to each other with main laser current temperature control interface 2, and main laser current temperature control interface 2 links to each other with current temperature control circuit 1.After finishing main laser installation connection, open the self-control main laser temperature-control circuit in the current temperature control circuit 1 earlier, its temperature stability is opened less than 0.1 milli, with adjustment at 17 degrees centigrade, after equitemperature is stable, open the self-control main laser current control circuit in the current temperature control circuit 1, the Current Control of main laser adopts the LD255 current control module of Thorlabs company, additional scanning and feedback circuit interface, the stability of its electric current is less than 1 microampere, electric current is reconciled near 75mA, can obtain near the divergencing laser of wavelength 780nm, its power output is 50 milliwatts, can obtain bigger laser output power when further reduction temperature and increase electric current.This moment laser beam and nonideal collimated light beam, reconcile main laser earlier and reconcile screw 31a, 31b, 31c, 31d, reconcile the main laser collimating lens again and reconcile screw 32a, 32b, 32c, 32d, reconcile main laser collimating lens 9 relative distributed feedback semiconductor laser 7 light emitting end surface front-back direction then, the collimation Gaussian beam that obtains is as the input beam of taper laser amplifier.
Glan Taylor prism 12,13,26 and 27 adopts the product of Laser Inst., Qufu Normal Univ., and model is LGP-4A5, and its overall dimension can be customized as required, and extinction ratio is less than 10
-5 Polarization apparatus 11 and 25 adopts the Faraday polarization apparatus of Inst. of Physics, CAS Beijing WuKe opto-electrical Technology Co., Ltd, its overall dimension also can be customized as required, extinction ratio is greater than 30dB, transmitance is greater than 97 percent, usually can the overall dimension of the overall dimension of polarization apparatus 11 and 25 and Glan Taylor prism 12,13,26 and 27 is supporting customized, the isolation of optical isolator is determined jointly by the extinction ratio of Glan Taylor prism and polarization apparatus.As shown in Figure 1, earlier Glan Taylor prism 12 and 13 is contained in two end faces of polarization apparatus 11 respectively, the angle of Glan Taylor prism 12 and 13 polarization direction is 45 degree, after the position relation of adjusting Glan Taylor prism 12,13 and polarization apparatus 11, it is fixed with screw, obtain the first optical isolator B, its isolation is greater than 30dB, and transmitance is greater than 90 percent, obtain the second optical isolator D by Glan Taylor prism 26,27 and polarization apparatus 25 combinations in the same way, its index is suitable.
Taper laser amplifies the product of the German m2kLaser of chip 21 employings company, its model is TA785-1000, optical maser wavelength is 780nm, power output 1W, taper laser amplifies chip 21 and is fixed on taper laser and amplifies chip carrier 21a (standard C-Mount), taper laser amplifier input condenser lens 20 is selected the aspherical mirror of Thorlabs company for use, its model is C350TM-B, 4.5 millimeters of focal lengths, numerical aperture 4.1, taper laser amplifier output collimating lens 22 is selected the aspherical mirror of Thorlabs company for use, and its model is C330TM-B, 3.1 millimeters of focal lengths, numerical aperture 6.8.As shown in Figure 1 and Figure 4, the taper laser that will have taper laser amplification chip 21 amplifies chip carrier 15 and is fixed on the taper laser amplifier shell 18b, thermistor 17 is placed on the taper laser amplifier shell 18b, taper laser amplifier shell 18a links to each other with taper laser amplifier shell 18b, whole taper laser amplifier shell 18,18a and 18b are placed on the thermoelectric cooling piece 16, thermoelectric cooling piece 16 is placed on the taper laser amplifier base 14, taper laser amplifies the current controling end of chip 21, the two ends of the two ends of thermistor 17 and thermoelectric cooling piece 16 link to each other with taper laser amplifier current temperature control interface 3, the electrode of taper laser amplification chip utilizes screw to link to each other with current temperature control interface 3 by ceramic electrode 40 and is fixed on the side of taper laser amplifier shell 18a, and current temperature control interface 3 links to each other with current temperature control circuit 1.As Fig. 1, Fig. 5 and shown in Figure 6, taper laser amplifier shell comprises 18,18a, 18b, 18c, 18d, 18e and 18f, (comprise 18 at taper laser amplifier shell, 18a, 18b, 18c, 18d, 18e and 18f) on chute is arranged, taper laser amplifier input condenser lens 20 is adjusted seat 19 with taper laser amplifier input condenser lens and is linked to each other, taper laser amplifier input condenser lens adjustment seat 19 is contained in the chute the inside of main laser base 18c and 18d, make things convenient for taper laser amplifier input condenser lens adjust seat 19 about and reconcile up and down, taper laser amplifier output collimating lens 22 is adjusted seat 23 with taper laser amplifier input condenser lens and is linked to each other, taper laser amplifier output collimating lens adjustment seat 23 is contained in the chute the inside of main laser base 18e and 18f, make things convenient for taper laser amplifier output collimating lens adjust seat 23 about and reconcile up and down, can prevent that dust from entering taper laser and amplifying chip 21 simultaneously.As shown in Figure 5, on the side of taper laser amplifier shell 18c, there are four taper laser amplifier input condenser lenses to reconcile screw 33a, 33b, 33c and 33d, reconcile screw 33a by taper laser amplifier input condenser lens, 33b, 33c and 33d reconcile taper laser amplifier input condenser lens 20 and taper laser and amplify the relative position, the left and right sides of chip 21, on the top and bottom of taper laser amplifier shell 18c and 18d, there are four taper laser amplifier input condenser lenses to reconcile screw 33e, 33f, 33g and 33h, reconcile screw 33e by taper laser amplifier input condenser lens, 33f, 33g reconciles taper laser amplifier input condenser lens 20 with 33h and amplifies the relative upper-lower position of chip 21 input end faces with taper laser, is injected into as far as possible with the output laser that guarantees main laser on the input end face of taper laser amplification chip 21.As shown in Figure 6, on the side of taper laser amplifier shell 18e, there are four taper laser amplifier output collimating lenses to reconcile screw 34a, 34b, 34c and 34d, reconcile screw 34a by taper laser amplifier output collimating lens, 34b, 34c and 34d reconcile taper laser amplifier output collimating lens 22 and taper laser and amplify the relative position, the left and right sides of chip 21, on the top and bottom of taper laser amplifier shell 18e and 18f, there are four taper laser amplifier output collimating lenses to reconcile screw 34e, 34f, 34g and 34h, reconcile screw 34e by taper laser amplifier output collimating lens, 34f, 34g reconciles taper laser amplifier output collimating lens 22 with 34h and amplifies the relative upper-lower position of chip 21 laser output faces with taper laser, amplifies the quality of chip 21 output laser beams to guarantee taper laser.Taper laser amplifier shell 18a, 18c and 18e are an integral body, and taper laser amplifier shell 18b, 18d and 18f are an integral body, and 18a, 18c link to each other with 18f with 18b, 18d with 18e.After the installation, open the taper laser amplifier temperature-control circuit in the current temperature control circuit 1 earlier, its temperature stability is opened less than 1 milli, with adjustment 22 degrees centigrade (near room temperatures), after equitemperature is stable, open the taper laser amplifier current control circuit in the current temperature control circuit 1, the Current Control of taper laser amplifier adopts the LD3000 current temperature control circuit 1 of Thorlabs company, extra current feedback circuit interface, the stability of its electric current is less than 10 microamperes, electric current is reconciled near 2.5A, can obtain near the divergencing laser of wavelength 780nm.Reconcile screw 33a with taper laser amplifier input condenser lens earlier, 33b, 33c and 33d reconcile taper laser amplifier input condenser lens 20 and taper laser and amplify the relative position, the left and right sides of chip 21, reconcile screw 33e with regulating taper laser amplifier input condenser lens again, 33f, 33g reconciles taper laser amplifier input condenser lens 20 with 33h and amplifies the relative upper-lower position of chip 21 input end faces with taper laser, regulate taper laser amplifier input condenser lens 20 relative taper laser chip 21 input end face front-back direction then, the output laser beam that guarantees main laser focuses on taper laser amplification chip 21 input end faces as much as possible, and the power output after the amplification is near 1W.The laser beam of this moment and nonideal collimated light beam, reconcile screw 34a with taper laser amplifier output collimating lens earlier, 34b, 334 reconcile taper laser amplifier output collimating lens 23 with 34d amplifies the relative position, the left and right sides of chip 21 output end faces with taper laser, reconcile screw 34e with regulating taper laser amplifier output collimating lens again, 34f, 34g reconciles taper laser amplifier output collimating lens 23 with 34h and amplifies the relative upper-lower position of chip 21 output end faces with taper laser, reconcile taper laser amplifier output condenser lens 22 relative taper laser chip 21 output end face front-back direction then, the Gaussian beam that obtains collimating.
Faint light detection laser power stability system is by beam splitter 38, the current control circuit 1 of photodetector 39 and taper laser amplifier is formed, can adopt the plated film beam splitter of Fujian Huake Photoelectric Co., Ltd. with beam splitter 38, require to plate different reflectance coatings according to reality, the model that photodetector section adopts Hamamatsu company to produce is the photodetector of S7510-03, the beam splitting that requires according to plated film obtains faint laser, survey acceptance by photodetector 39, the current control circuit that the fluctuation signal that amplifies the back laser power is fed back to the taper laser amplifier carries out negative feedback control to it, feedback circuit can adopt phase-locked amplifying circuit and proportion integration differentiation circuit to finish, the laser power stability after the assurance shaping.
The laser shaping system is finished by cylindrical mirror 29, cylindrical mirror 29 can be selected the PCX0501 of Fujian Hua Ke photoelectricity technology corporation, Ltd. for use, because taper laser amplifies in different size in the position of laser output face and the angle of divergence of chip 21 vertical divergence angles and horizontal divergence angle, the diverging light of horizontal direction and vertical direction can not be collimated simultaneously with an aspherical mirror (taper laser amplifier output collimating lens 22), select for use cylindrical mirror 29 shapings to obtain the Gaussian beam 30 of sub-circular hot spot.Second optical isolator is placed on the centre of taper laser amplifier and cylindrical mirror 29.
The circuit that is adopted is the current temperature control circuit, current temperature control circuit 1 adopts the DC100 of Toptica company, it comprises modules such as DTC100 and DCC100, the temperature-control circuit of main laser and current control circuit are controlled respectively by the DTC100 and the DCC100 (500mA) of Toptica company, the temperature of taper amplifying laser device and current control circuit are controlled respectively by the DTC100 and the DCC100 (3A) of Toptica company, and negative-feedback circuit can adopt the LIR100 or the lock-in amplifier of Toptica company.
Carry out the integral body debugging after finishing above step, according to main laser A, the first optical isolator B, taper laser amplifier C, the second optical isolator D, the order of faint light detection laser power stability E of system and the F of laser shaping system is debugged successively, the faint light detection laser power stability E of system is by beam splitter 38, photodetector 39 is formed, the F of laser shaping system is by cylindrical mirror base 28, cylindrical mirror 29 is formed, the stability of laser realizes by the faint light detection laser power stability E of system, laser beam after the amplification is divided into two bundles by beam splitter 38, feed back to current temperature control circuit 1 after the fluctuation of photodetector 39 detection of optical power, carry out negative feedback control by electric current, obtain the laser beam of power stability the taper amplifier.The stability of laser realizes by the faint light detection laser power stability E of system, fixedly main laser collimating lens fixed screw 35, taper laser amplifier input condenser lens fixed screw 36 and taper laser amplifier output collimating lens fixed screw 37 then obtain live width in 1MHz magnitude, the power output stable collimation Gaussian beam at 1W.
Above technical scheme can realize a kind of compact conformation, laser rays width, power height, good stability, semiconductor laser easy to adjust, practical.
Claims (4)
1. distributed feedback injection amplification semiconductor laser, it comprises main laser (A), first optical isolator (B), taper laser amplifier (C), second optical isolator (D), faint light detection laser power stability system (E) and laser shaping system (F), it is characterized in that main laser (A) adopts distributed feedback semiconductor laser, main laser is adjusted seat (5) and is linked to each other with main laser base (4) with main laser collimating lens adjustment seat (8), distributed feedback semiconductor laser tube (7) is adjusted on the seat (5) with being fixed on main laser after thermoelectric cooling package module (6) links to each other, and main laser collimating lens (9) and main laser collimating lens are adjusted (8) and linked to each other; Taper amplifying laser device (C) adopts taper laser to amplify chip (21), taper laser amplifier base (14) links to each other with thermoelectric cooling piece (16), taper laser amplifier input condenser lens is adjusted seat (19), taper laser amplifier output collimating lens is adjusted seat (23) and is linked to each other with thermoelectric cooling piece (16) with taper laser amplifier base (14), taper laser amplifies chip (21) and links to each other with taper laser amplifier base (14) with thermistor (17), taper laser amplifier input condenser lens (20) is adjusted seat (19) with taper laser amplifier input condenser lens and is linked to each other, taper laser amplifier output collimating lens (22) is adjusted seat (23) with taper laser amplifier output collimating lens and is linked to each other, and the electrode that taper laser amplifies chip (21) links to each other with current temperature control port (3) by ceramic electrode (40); Faint light detection laser power stability system (E) adopts beam splitter (38) and photodetector (39); The output laser of main laser (A) injects taper laser amplifier (C) through first optical isolator (B) back, pass through the current temperature control circuit (1) that faint light detection laser power stability system (E) feeds back to taper laser amplifier (C) again behind amplifying laser process light second isolator (D), light is through laser shaping system (F) back output collimation Gaussian beam.
2. a kind of distributed feedback injection amplification semiconductor laser according to claim 1, it is characterized in that: main laser (A) comprises distributed feedback semiconductor laser tube (7), thermoelectric cooling package module (6), main laser is adjusted seat (5), main laser collimating lens (9) and main laser collimating lens are adjusted seat (8), distributed feedback semiconductor laser tube (7) links to each other with thermoelectric cooling package module (6), thermoelectric cooling package module (6) and main laser are adjusted link to each other position about the adjusting of back of seat (5), main laser collimating lens (9) is adjusted with the main laser collimating lens and is regulated position up and down after seat (8) links to each other, main laser collimating lens (9) is regulated by main laser collimating lens (9) front and back with the position of distributed feedback semiconductor laser tube (7) light emitting end surface, regulate the relative position of distributed feedback semiconductor laser tube (7) and main laser collimating lens (9), the Gaussian beam that obtains collimating.
3. a kind of distributed feedback injection amplification semiconductor laser according to claim 1, it is characterized in that: taper laser amplifier (C) comprises taper laser amplifier base (14), taper laser amplifies chip pad (15), thermoelectric cooling piece (16), thermistor (17), taper laser amplifier input condenser lens is adjusted seat (19), taper laser amplifier input condenser lens (20), taper laser amplifies chip (21), taper laser amplifier output collimating lens (22), taper laser amplifier output collimating lens is adjusted seat (23), thermoelectric cooling piece (16) amplifies chip pad (15) with taper laser amplifier base (14) and taper laser and links to each other, thermistor (17) amplifies chip (21) with taper laser and links to each other with current temperature control port (3) by ceramic electrode (40), the collimation laser of main laser (A) output injects taper laser by taper laser amplifier input condenser lens (20) back and amplifies chip (21), laser beam after the amplification collimates with taper laser amplifier output collimating lens (22), and taper laser amplifier input condenser lens (20) links to each other with taper laser amplifier shell (18) with taper laser amplifier output collimating lens (22) and regulates the relative position that amplifies chip (21) with taper laser.
4. a kind of distributed feedback injection amplification semiconductor laser according to claim 1, it is characterized in that: faint light detection laser power stability system (E) is made up of beam splitter (38), photodetector (39), laser beam after the amplification is divided into two bundles by beam splitter (38), feed back to current temperature control circuit (1) after the fluctuation of photodetector (39) detection of optical power, carry out negative feedback control by electric current, obtain the laser beam of power stability the taper amplifier.
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| CN102035125B (en) * | 2009-09-25 | 2012-06-27 | 中国科学院半导体研究所 | Encapsulating structure of distributed feedback (DFB) fiber laser |
| CN102340098A (en) * | 2010-07-21 | 2012-02-01 | 北京优立光太科技有限公司 | Semiconductor laser amplifier |
| JP6696691B2 (en) * | 2016-09-05 | 2020-05-20 | 株式会社東芝 | Terahertz quantum cascade laser device |
| CN110581433A (en) * | 2019-09-12 | 2019-12-17 | 中国科学院苏州生物医学工程技术研究所 | Yellow laser based on terbium-doped fluoride crystal |
| CN113972560A (en) * | 2021-10-20 | 2022-01-25 | 南京理工大学 | Double-isolator semiconductor optical amplifier and coupling method thereof |
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