CN101236847A - Arc-extinction electric contact part based on micro-electronic mechanical technology - Google Patents
Arc-extinction electric contact part based on micro-electronic mechanical technology Download PDFInfo
- Publication number
- CN101236847A CN101236847A CNA2007101718866A CN200710171886A CN101236847A CN 101236847 A CN101236847 A CN 101236847A CN A2007101718866 A CNA2007101718866 A CN A2007101718866A CN 200710171886 A CN200710171886 A CN 200710171886A CN 101236847 A CN101236847 A CN 101236847A
- Authority
- CN
- China
- Prior art keywords
- micro
- electrical contact
- top electrode
- electronic mechanical
- arc extinguishing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Micromachines (AREA)
Abstract
The invention discloses a blow-out electric contactor element on the basis of the microelectronic mechanical technology, belonging to the microelectronic mechanical technical field. The invention comprises an upper part and a lower part, wherein, the upper part structure and the lower part structure are combined into a whole through a through hole connecting terminal manufactured integrally to form an electric contactor element body. The upper structure comprises a support body and an upper electrode and contacts of the upper electrode; the lower part structure comprises an underlay structure on which a lower electrode corresponding to the upper electrode and auxiliary contacts are arranged; the lower electrode serves as a main contact; all auxiliary contacts and the main contact are connected in parallel; the auxiliary contacts are realized by a socle beam structure; each auxiliary contact is connected in series with a current-limiting resistance; resistance value and number of parallel connected resistance are selected to prevent arc starting of the auxiliary contacts. The auxiliary contacts bear the energy of disjunction or closing, so that the main contact can work under the smallest striking voltage and avoid arc starting of the main contact, thereby realizing nonarcing make-and-break of a circuit.
Description
Technical field
The present invention relates to a kind of device of technical field of microelectronic mechanical systems, particularly a kind of arc extinguishing electrical contact device based on micro-electronic mechanical skill.
Background technology
Along with progress of science and technology, the microminiaturized trend of electric contacts such as contactor, circuit breaker, contactor-breaker is more and more obvious, this trend runs into traditional mechanical process technology limit bottleneck on the one hand, brings unprecedented challenge on the other hand the arc extinguishing technology.Developing reliable miniature electric contacts becomes a big problem of industrial circle.In recent ten years, based on large scale integrated circuit manufacturing technology and the exclusive special process of micromachining technology, realize the multi-functional integrated of MIniature machinery structure, miniature actuator, microelectronic component and Circuits System, form so-called microelectromechanical systems (being called for short MEMS), or micro-system.The MEMS device has that volume is little, in light weight, reliability is high, can, low-cost production in enormous quantities at dust free room, and cost performance is improved significantly with respect to tradition " machinery " manufacturing technology.Owing to have above-mentioned plurality of advantages, the MEMS technology becomes one of best approach that solves small size and arc extinguishing two big contradictions.
Find that through literature search United States Patent (USP) (US7053739-B2) discloses a kind of arc extinguishing contactor design based on micro-processing technology to prior art.This design adopts body silicon micromachining technology to prepare two discrete electrodes structures up and down respectively, by bonding two structures is up and down coupled together then, comes the transferred arc energy by the parallel resistance that silicon doping forms, and avoids the starting the arc.The upper electrode arrangement of its sealing is unfavorable for heat radiation, can reduce reliability and arc-rupturing capacity greatly.It is two parts structural design of separating up and down, not only can reduce the rate of finished products of device, also can raise the cost.The diversity that bulk silicon technological limit structural material and contact material are selected has reduced reliability, has improved manufacturing cost simultaneously.
Summary of the invention
The present invention overcomes the deficiencies in the prior art part, a kind of arc extinguishing electrical contact device based on micro-electronic mechanical skill is provided, make it simple in structure, has very high device reliability, have fully-integrated manufacturing potentiality, the rate of finished products height is fit to produce in batches, both can be used alone as contactor, also can be assemblied in contactor, circuit breaker, contactor-breaker, the startup type device.
The present invention is achieved by the following technical solutions, the present invention includes: upper and lower two parts, two-part structure is combined into one by the through hole joint pin of integrated manufacturing up and down, constitutes the electrical contact device body.
Described superstructure comprises supporter and top electrode and contact thereof, and top electrode links to each other with supporter.
Described substructure comprises a substrat structure, substrate is provided with bottom electrode corresponding with top electrode and auxiliary contact, make main contacts on the bottom electrode, auxiliary contact are realized by cantilever beam, cantilever beam is fixed on the bearing of cantilever beam below, and the cantilever beam bearing then is fixed on the substrate, resistance of each auxiliary contact series connection, suitably select resistance and parallel resistance number to prevent the auxiliary contact starting the arc, all auxiliary contact are in parallel with main contacts.
Described top electrode can move up and down, and its mobility is to realize by the supporter that is attached thereto, and supporter is a spring structure, bottom electrode is fixed on the substrate, top electrode and bottom electrode both can adopt identical materials, also can adopt different materials, comprised metal and silica-base material.
Described top electrode contact and main contacts both can adopt identical materials, also can adopt different materials.
Described auxiliary contact are in parallel with main contacts by the auxiliary contact of the cantilever beam realization and the current-limiting resistance of connecting, and resistance is for mixing by the single or multiple lift metal film of sputter or composite plating formation or P, B, the As of silicon.
Described cantilever beam, joint pin and bottom electrode can be same material, it also can be different materials, be single or multiple lift metal film or monocrystalline silicon, silicon dioxide, polysilicon, the compound tunic of one or more in the silicon nitride, these monofilms or compound tunic can be realized by sputter or thermal oxidation or composite plating.
Described auxiliary contact are in parallel with main contacts by the auxiliary contact of the cantilever beam realization and the current-limiting resistance of connecting.When the contactor both end voltage is V, the minimum striking current in contact is I
MinThe time, each current-limiting resistance is greater than V/I
MinWhen making current is I, the minimum striking current in contact is V
Min, auxiliary contact institute series impedance is R
sThe time, the parallel resistance number is greater than R
sI/V
Min
Described substrate is an insulator, and it can be glass or the silicon chip that has insulating barrier, and insulating layer material can be silicon dioxide or silicon nitride, also can be other dielectric substrate.
Arc quenching principle of the present invention is as follows: when electrical contact device was closed, auxiliary contact were connected earlier, selected series impedance can avoid the auxiliary contact starting the arc or electric arc that auxiliary switch is caused damage.The voltage at main contacts two ends depends on the series resistance of auxiliary contact.Voltage when the main contacts two ends is lower than minimum arc voltage V
MinThe time, main contacts can be avoided the starting the arc, realizes no arc closure.
When the contact disconnected, main contacts disconnected earlier.The voltage at the current-limiting resistance two ends that the auxiliary contact that the low pressure at main contacts two ends equals still to connect are connected.Current-limiting resistance value by changing auxiliary contact and select suitable auxiliary contact number for use can reduce the touch voltage at main contacts two ends.Touch voltage when the main contacts two ends is lower than minimum arc voltage V
MinThe time, main contacts can be avoided the starting the arc, realizes that no arc cut-offs.
In order to prevent the main contacts starting the arc, auxiliary contact and current-limiting resistance number N thereof in parallel should satisfy:
N＞R
sI/V
min
V wherein
MinThe expression minimum arc voltage, I represents total electric current of make-and-break.
In order to prevent the auxiliary contact starting the arc, each current-limiting resistance R
sShould satisfy:
R
s＞V/I
min
Wherein V is the maximum contact voltage at auxiliary contact and current-limiting resistance two ends, I
MinMinimum striking current for each auxiliary contact.
Choose suitable N and R
sSatisfy above-mentioned two formulas and can successfully realize the arc extinguishing function.
Be that metal directly contacts when the invention has the beneficial effects as follows the closing of contact, contact resistance is little, and the insertion loss is low; The contact is air-gap insulated when disconnecting, and offresistance is big, partition is effective, has the advantage of traditional electromechanic contactor spare.Two-part structure integrated design up and down, have simple in structure, the reliability height, technology is simple, easily processing, the rate of finished products height is fit to the characteristics of producing in batches.The application of non-silicon face micro-processing technology makes the present invention have very high cost performance with respect to the body silicon technology.
Description of drawings
Fig. 1 is the equivalent electric circuit of electrical contact device of the present invention
Fig. 2 is the operating mode of electrical contact device of the present invention
Fig. 3 is the off-state generalized section of electrical contact device of the present invention
Fig. 4 is the closure state initial stage generalized section of electrical contact device of the present invention
Fig. 5 is the closure state generalized section in latter stage of electrical contact device of the present invention
Fig. 6 is the example structure schematic diagram of electrical contact device of the present invention
Fig. 7 is the example structure schematic diagram of electrical contact device of the present invention
Fig. 8 is the example structure schematic diagram of electrical contact device of the present invention
Fig. 9 is the example structure schematic diagram of electrical contact device of the present invention
Embodiment
Below in conjunction with accompanying drawing embodiments of the invention are elaborated: present embodiment is being to implement under the prerequisite with the technical solution of the present invention, provided detailed execution mode and concrete operating process, but protection scope of the present invention is not limited to following embodiment.
As Fig. 6-shown in Figure 9, the present invention includes: upper and lower two parts, two-part structure is combined into one by the through hole joint pin 4 of integrated manufacturing up and down, constitutes the electrical contact device body.
Described superstructure comprises supporter 2 and top electrode 1 and contact 3 thereof, and top electrode 1 links to each other with supporter 2.
Described substructure comprises a substrat structure 10, substrate 10 is provided with bottom electrode 9 and the auxiliary contact 5 corresponding with top electrode 1, make main contacts 8 on the bottom electrode 9, auxiliary contact 5 are realized by cantilever beam 6, cantilever beam 6 is fixed on the bearing of cantilever beam 6 belows, and the cantilever beam bearing then is fixed on the substrate 10, resistance of each auxiliary contact 5 series connection, suitably select resistance and parallel resistance number to prevent the auxiliary contact starting the arc, all auxiliary contact 5 are in parallel with main contacts 8.
Described top electrode 1 is realized moving by the spring support 2 that is attached thereto, and bottom electrode 9 is fixed on the substrate 10, and spring support 2 can be single or multiple lift metal film or polymer film.Top electrode 1 and bottom electrode 9 both can adopt identical materials, also can adopt different materials, and top electrode 1 is the single or multiple lift metal film, and these monofilms or compound tunic can be realized by sputter or composite plating.
Described top electrode contact 3 and main contacts 8 both can adopt identical materials, also can adopt different materials, were Cu, Ag, and Au, Pt, Pd, Ni, W, the compound tunic of one or more among the C, these monofilms or compound tunic can be realized by sputter or composite plating.
Described auxiliary contact 5 are in parallel with main contacts 8 by the auxiliary contact 5 of cantilever beam 6 realizations and the current-limiting resistance of connecting, and cantilever beam 6 can be produced on separately on the substrate and also can form by etching lining ground; Current-limiting resistance is for mixing by the single or multiple lift metal film of sputter or composite plating formation or P, B, the As of silicon.
Described cantilever beam 6, joint pin 4 and bottom electrode 9 can be same material, it also can be different materials, be single or multiple lift metal film or monocrystalline silicon, silicon dioxide, polysilicon, the compound tunic of one or more in the silicon nitride, these monofilms or compound tunic can be realized by sputter or thermal oxidation or composite plating.
Described auxiliary contact are in parallel with main contacts 8 by the auxiliary contact 5 of cantilever beam 6 realizations and the current-limiting resistance of connecting.When the contactor both end voltage is V, the minimum striking current in contact is I
MinThe time, each current-limiting resistance is greater than V/I
MinWhen making current is I, the minimum striking current in contact is V
Min, 5 series impedances of auxiliary contact are R
sThe time, the parallel resistance number is greater than R
sI/V
Min
Described substrate 10 is an insulator, and it can be glass or the silicon chip that has insulating barrier, and insulating layer material can be silicon dioxide or silicon nitride, also can be other dielectric substrate.
The contact-making surface diameter of described top electrode 1 is 200～2000um, the contact-making surface diameter of described bottom electrode 9 is 100～1500um, the spacing distance of described top electrode contact 3 and main contacts 8 is 20～100um, the height of described auxiliary contact 5 is at 0～20um, the height of described cantilever beam bearing 4 is 40～200um, described cantilever beam 6 length are at 50～500um, and the height of described cantilever beam bearing 7 is 10～100um, and entire device is of a size of 2 * 2 * 0.08～10 * 10 * 0.5mm.
Fig. 1 has provided the equivalent circuit diagram of electrical contact device of the present invention.Entire circuit is made up of power supply S, load L, auxiliary contact 5, current-limiting resistance R, main contacts 8 and earth terminal G, and I represents electric current.Power supply S, load L, auxiliary contact 5, current-limiting resistance R, main contacts 8, earth terminal G constitute whole loop.Auxiliary contact 5 and main contacts 8 parallel connections, identical current-limiting resistance R of each auxiliary contact 5 series connection.
Fig. 2 has provided the break-make pattern of auxiliary contact 5 and main contacts 8.A and B do not represent the state of auxiliary contact 5 and main contacts 8 respectively.1 expression on-state, 0 expression off-state.When contactor was closed, auxiliary contact 3 were connected A1 earlier, and main contacts 8 is connected B1 then, and circuit connects 1, and auxiliary contact 5 are by short circuit; When contactor disconnected 0, main contacts 8 disconnected B0 earlier, and auxiliary contact 5 disconnect A0 subsequently, and circuit thoroughly disconnects 0.
Fig. 3 has provided the off-state of electrical contact device of the present invention.Top electrode contact 3 is air-gap insulated with main contacts 8 and auxiliary contact 5, and circuit is in off-state.
Fig. 4 has provided the closure state initial stage of electrical contact device of the present invention.Top electrode 1 moves down, and top electrode contact 3 contacts with the auxiliary contact 5 of cantilever beam 6 structures earlier, and auxiliary circuit is connected, and still there is a segment distance top electrode contact 3 with main contacts 8, still is in off-state.
Fig. 5 has provided the closure state latter stage of electrical contact device of the present invention.Top electrode 1 continues to be moved downward to till the bottom electrode 9, and this moment, top electrode contact 3 contacted with main contacts 8, and main circuit is connected, and auxiliary circuit is disconnected by short circuit.
Further specify embodiment of the present invention and ins and outs below by embodiment, but embodiment that relates to and ins and outs are not limited to these embodiment.
As shown in Figure 6, cantilever beam 6 height maintain an equal level with bottom electrode 9, make auxiliary contact 5 on the cantilever beam 6.The make-and-break time difference of auxiliary contact 5 and main contacts 8 realizes highly that by auxiliary contact 5 current-limiting resistance and cantilever beam 6 numbers are 24, resistance 240 Ω, and top electrode 1, supporter 2, joint pin 4, cantilever beam 6, cantilever beam bearing 7 and bottom electrode 9 all adopt nickel; Substrat structure 10 is a glass; Top electrode contact 3, auxiliary contact 5 and main contacts 8 all adopt gold; Resistance adopts titanium.Specific implementation method is as follows: sputter 500nm titanium film on sheet glass at first, dissolve resistance by RIE dry etching or HF wet etching figure again, next sputter Cu/Cr Seed Layer, 300nm is thick, follow electroformed nickel bottom electrode 9, joint pin 4 and cantilever beam bearing 7,20um is thick, and the gold that electroforming 1um is thick is as main contacts 8 subsequently; And then sputter 300nm Cu/Cr Seed Layer, electroformed nickel cantilever beam 6,20um is thick, follows electroforming gold auxiliary contact 5, and 10um is thick, gets rid of the positive glue of 20um subsequently as sacrifice layer, makes joint pin 4 by lithography on sacrifice layer, electroformed nickel joint pin 4,20um; Sputter 300nm Cu/Cr Seed Layer once more on sacrifice layer at last, electroformed nickel top electrode 1 and supporter 2,20um, positive glue and Seed Layer below discharging promptly get the structure of wanting.Key structure in the present embodiment all is made of metal, therefore can bring into play the integrated manufacturing of three-dimensional non-silicon micromachining technology to greatest extent, the advantage of non-silicon microstructure of lamination and technical maturity, photosensitive material photoetching development technology, metal selective electroplating technology by microelectronic processing technique are realized, make cost silicon device reduction by 50% on year-on-year basis, integral device size 6 * 6 * 0.3mm, contact resistance are 0.5 Ω, and make-break capacity is 91.2V/1.5A.
As shown in Figure 7, still adopt auxiliary contact 5 to realize the priority break-make of auxiliary contact 5 and main contacts 8.Current-limiting resistance and cantilever beam 6 numbers are 80, and resistance 80 Ω are that with embodiment shown in Figure 61 structure difference cantilever beam 6 is produced on bottom electrode 9.Material therefor is also different, and supporter 2 adopts SU-8 glue; Top electrode 1, joint pin 4, cantilever beam 6 and cantilever beam bearing 7 all adopt nickel; Bottom electrode 9 adopts copper; Substrat structure 10 is a silicon chip; Silver palladium alloy is adopted in top electrode contact 3; Auxiliary contact 5 and main contacts 8 adopt golden nickel alloy; Resistance adopts chromium.Specific implementation method is as follows: at first oxidation forms the layer of silicon dioxide insulating barrier on silicon chip, sputter 300nm chromium thin film subsequently, dissolve resistance by the RIE dry etching figure again, next sputter Cu/Cr Seed Layer, 300nm is thick, follow copper electroforming bottom electrode 9 and nickel joint pin 4 and cantilever beam bearing 7,20um is thick, and the golden nickel alloy that electroforming 1um is thick is as main contacts 8 subsequently; And then sputter 300nm Cu/Cr Seed Layer, electroforming goes out nickel cantilever beam 6, and 20um is thick, and then electroforming gold nickel alloy auxiliary contact 5, and 10um is thick, gets rid of the positive glue of 20um subsequently as sacrifice layer, makes joint pin 4 by lithography on sacrifice layer, electroforming 20um nickel; Sputter 300nm Cu/Cr once more on sacrifice layer at last, electroformed nickel top electrode 1 removes positive glue, gets rid of the thick SU-8 glue of 50um, makes supporter 2 by lithography, and positive glue and Seed Layer below discharging promptly get the structure of wanting.The supporter 2 of present embodiment adopts elastomeric SU-8 glue, makes supporter life-span other metal or nonmetally will prolong 100% on year-on-year basis, and the insulation characterisitic of SU-8 glue excellence can be brought up to the compressive resistance of device more than the 200V from tens V.Silver palladium alloy and the pairing of golden nickel alloy are adopted in the contact, can improve order of magnitude of contact endurance with respect to Jin-Jin pairing, integral device size 5 * 5 * 0.2mm, and, contact resistance 0.1 Ω, make-break capacity are 30V/15A.
As shown in Figure 8, highly realize the priority break-make of auxiliary contact 5 and main contacts 8 by increasing cantilever beam bearing 4 height or cantilever beam 6, current-limiting resistance and cantilever beam 6 numbers are 100, resistance 300 Ω.Only enumerate the example of increasing cantilever beam bearing 4 below.Cantilever beam 6 is a little more than bottom electrode 9, and cantilever beam 6 itself is used as auxiliary contact 5.The make-and-break time difference of auxiliary contact 5 and main contacts 8 realizes by the difference in height of cantilever beam 6 with bottom electrode 9.Top electrode 1 adopts iron-nickel alloy, and bottom electrode 9 adopts copper; Supporter 2 adopts polyimides; Joint pin 4 and cantilever beam bearing 7 adopt iron-nickel alloy; Cantilever beam 6 adopts nickel; Substrat structure 10 is a glass; Gold is adopted in top electrode contact 3, and auxiliary contact 5 and main contacts 8 adopt platinum; Resistance adopts the chromium titanium compound film.Specific implementation method is as follows: sputter 500nm chromium/titanium film successively on sheet glass at first, dissolve resistance by the etching figure again, next sputter Cu/Cr Seed Layer, 300nm is thick, follow copper electroforming bottom electrode 9, iron nickel joint pin 4 and cantilever beam bearing 7,20um is thick, and the platinum that electroforming 1um is thick is as main contacts 8 subsequently; And then sputter 300nm Cu/Cr Seed Layer, electroforming goes out nickel cantilever beam 6, and 20um is thick, gets rid of the positive glue of 20um subsequently as sacrifice layer, makes joint pin 4 on sacrifice layer by lithography, electroforming 20um iron nickel joint pin 4; Sputter 300nm Cu/Cr Seed Layer once more on sacrifice layer at last, electroforming iron-nickel alloy top electrode 1,20um gets rid of polyimides 50um again, makes supporter 2 by lithography, and positive glue and Seed Layer below discharging promptly get the structure of wanting.Key structure in the present embodiment is all made by metal or polymer, therefore can bring into play the integrated manufacturing of three-dimensional non-silicon micromachining technology to greatest extent, the non-silicon microstructure of lamination, the advantage of technical maturity, supporter adopts elastomeric polyimides, make supporter life-span other metal or nonmetally will prolong more than 100% on year-on-year basis, and the insulation characterisitic of polyimides excellence can be brought up to the compressive resistance of device more than the 200V from tens V, the application of glass substrate reduces substrate cost 90%, integral device size 5 * 5 * 0.2mm, contact resistance 0.05 Ω, make-break capacity are 120V/6A.
As shown in Figure 9, concrete structure reference example 1,2 or 3, difference are that a body silicon MEMS technology and non-silicon MEMS surface micro-processing technology combine, realize both bringing out the best in each other, simultaneously can satisfy particular demands, current-limiting resistance and cantilever beam 6 numbers are 50, resistance 600 Ω.Concrete structure is: top electrode 1 adopts copper; Bottom electrode 9 adopts silicon; Joint pin 4 adopts nickel, and adhesion layer 11 is a chromium; Supporter 2, cantilever beam bearing 7 and cantilever beam 6 adopt nickel; Substrat structure 10 is a silicon chip; Top electrode contact 3, auxiliary contact 5 and main contacts 8 adopt chromium/gold; Resistance is realized by the phosphorus doping of silicon.Embodiment is as follows: at first, silicon chip is carried out the ICP-RIE isotropic etching, etch the high auxiliary contact of 5um 5, then sputter Cr/Au (500A/9500A) is as contact 5 electric contacting layers; Then silicon chip is carried out the ICP-RIE anisotropic etching, etch the high cantilever beam of 30um 6 flying heights, then carry out the ICP-RIE isotropic etching again, discharge cantilever beam 6; With positive glue whole substructure overhanging portion is filled up subsequently, make joint pin 4 by lithography, the sputter Cr/Cu adhesion layer Seed Layer of holding concurrently is got rid of the positive glue of 30um as sacrifice layer, makes joint pin 4 by lithography, electroformed nickel 30um; At last, sacrifice layer is polished, 300nm is thick for sputter Cr/Cu Seed Layer, and first positive-glue removing makes top electrode by lithography, and copper electroforming 25um gets rid of 30 positive glue protection top electrodes again, makes supporter 2 by lithography, electroformed nickel, and 25um is thick, removes all positive glue and Seed Layer, gets final product.Present embodiment combines non-silicon micromachining technology of three-dimensional and silica-based micro-processing technology, realize the mutual supplement with each other's advantages of manufacture method and the diversity of device performance, resistance both can mix P, As or B realizes by silicon, also can realize by sputter chromium or titanium metal film, top electrode can adopt any scheme in the foregoing description, demonstrates great flexibility, integral device size 3 * 3 * 0.1mm, contact resistance 0.4 Ω, make-break capacity are 240V/1.4A.
Claims (9)
1, a kind of arc extinguishing electrical contact device based on micro-electronic mechanical skill, by last, following two conjuncted parts constitute the electrical contact device body, it is characterized in that: described superstructure comprises supporter (2) and top electrode (1) and contact (3) thereof, top electrode (1) links to each other with supporter (2), substructure comprises a substrat structure (10), substrate (10) is provided with bottom electrode (9) and the auxiliary contact (5) corresponding with top electrode (1), establish main contacts (8) on the bottom electrode (9), auxiliary contact (5) are realized by cantilever beam (6), resistance of each auxiliary contact (5) series connection, all auxiliary contact (5) are in parallel with main contacts (8).
2, the arc extinguishing electrical contact device based on micro-electronic mechanical skill according to claim 1 is characterized in that: described two-part structure up and down is combined into one by through hole joint pin (4).
3, the arc extinguishing electrical contact device based on micro-electronic mechanical skill according to claim 1 is characterized in that: described top electrode (1) is realized moving by the spring support (2) that is attached thereto, and bottom electrode (9) is fixed on the substrate (10).
4, according to claim 1 or 3 described arc extinguishing electrical contact devices based on micro-electronic mechanical skill, it is characterized in that: described top electrode (1) is the single or multiple lift metal film.
5, the arc extinguishing electrical contact device based on micro-electronic mechanical skill according to claim 1 is characterized in that: described top electrode contact (3) and main contacts (8), but its material is the metal of electroforming.
6, the arc extinguishing electrical contact device based on micro-electronic mechanical skill according to claim 1 is characterized in that: the resistance of described auxiliary contact (5) series connection, this resistance are that P, B, the As of single or multiple lift metal film or silicon mixes.
7, the arc extinguishing electrical contact device based on micro-electronic mechanical skill according to claim 1 is characterized in that: described cantilever beam (6), joint pin (4) and bottom electrode (9), its material are silicon or non-silicon materials.
8, the arc extinguishing electrical contact device based on micro-electronic mechanical skill according to claim 1 is characterized in that: described substrate (10) is an insulator.
9, according to claim 1 or 8 described arc extinguishing electrical contact devices based on micro-electronic mechanical skill, it is characterized in that: described substrate (10), its material are glass or silicon chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007101718866A CN101236847A (en) | 2007-12-06 | 2007-12-06 | Arc-extinction electric contact part based on micro-electronic mechanical technology |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007101718866A CN101236847A (en) | 2007-12-06 | 2007-12-06 | Arc-extinction electric contact part based on micro-electronic mechanical technology |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101236847A true CN101236847A (en) | 2008-08-06 |
Family
ID=39920378
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2007101718866A Pending CN101236847A (en) | 2007-12-06 | 2007-12-06 | Arc-extinction electric contact part based on micro-electronic mechanical technology |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101236847A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104143455A (en) * | 2013-05-11 | 2014-11-12 | 天水长城电工起重电气有限公司 | Multifunctional arc-free switch and measure for achieving arc-free closing and opening |
| CN107393767A (en) * | 2017-07-24 | 2017-11-24 | 中北大学 | A kind of T-shaped double cantilever beam formula single-pole double-throw switch (SPDT) |
| CN107424875A (en) * | 2017-07-24 | 2017-12-01 | 中北大学 | A kind of cross SP3T switch |
| CN107437484A (en) * | 2017-07-24 | 2017-12-05 | 中北大学 | A kind of RF MEMS Switches with spring beam contact |
| CN107437483A (en) * | 2017-07-24 | 2017-12-05 | 中北大学 | A kind of board-type single-pole single-throw switch (SPST) single-chip integration attenuator |
| CN108648964A (en) * | 2018-06-15 | 2018-10-12 | 中北大学 | A kind of RF MEMS Switches based on no release aperture upper electrode arrangement |
-
2007
- 2007-12-06 CN CNA2007101718866A patent/CN101236847A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104143455A (en) * | 2013-05-11 | 2014-11-12 | 天水长城电工起重电气有限公司 | Multifunctional arc-free switch and measure for achieving arc-free closing and opening |
| CN107393767A (en) * | 2017-07-24 | 2017-11-24 | 中北大学 | A kind of T-shaped double cantilever beam formula single-pole double-throw switch (SPDT) |
| CN107424875A (en) * | 2017-07-24 | 2017-12-01 | 中北大学 | A kind of cross SP3T switch |
| CN107437484A (en) * | 2017-07-24 | 2017-12-05 | 中北大学 | A kind of RF MEMS Switches with spring beam contact |
| CN107437483A (en) * | 2017-07-24 | 2017-12-05 | 中北大学 | A kind of board-type single-pole single-throw switch (SPST) single-chip integration attenuator |
| CN108648964A (en) * | 2018-06-15 | 2018-10-12 | 中北大学 | A kind of RF MEMS Switches based on no release aperture upper electrode arrangement |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP1785391B1 (en) | Multi-stable electromechanical switches and methods of fabricating same | |
| JP3808052B2 (en) | Manufacturing method of micro electromechanical switch (MEMS) | |
| US6746891B2 (en) | Trilayered beam MEMS device and related methods | |
| US6621135B1 (en) | Microrelays and microrelay fabrication and operating methods | |
| CN101236847A (en) | Arc-extinction electric contact part based on micro-electronic mechanical technology | |
| CN103155069A (en) | Pull up electrode and waffle type microstructure | |
| EP1391906A2 (en) | Electrostatic RF mems switches | |
| CN102486972B (en) | Dual-channel radio-frequency MEMS (Micro Electro Mechanical System) switch and manufacturing method thereof | |
| KR20090068173A (en) | Mems switch with improved standoff voltage control | |
| US20060274470A1 (en) | Contact material, device including contact material, and method of making | |
| CN103518248A (en) | RF MEMS crosspoint switch and crosspoint switch matrix comprising RF MEMS crosspoint switches | |
| CN101763987B (en) | RF MEMS switch and preparation method thereof | |
| JP2006294591A (en) | Electrostatic micro-contact switch, its manufacturing method, and apparatus using the switch | |
| JP2007535797A (en) | Beam for micromachine technology (MEMS) switches | |
| KR101151976B1 (en) | Mechanical switch with a curved bilayer | |
| US8054148B2 (en) | Contact material, device including contact material, and method of making | |
| US20050121298A1 (en) | Microrelays and microrelay fabrication and operating methods | |
| CN103943420A (en) | MEMS relay, cantilever beam switches and forming method of cantilever beam switches | |
| CN103858199A (en) | Electric equipment with moving part and manufacturing method thereof | |
| EP1535296A1 (en) | Micro-electromechanical switch having a deformable elastomeric conductive element | |
| JP4564549B2 (en) | MEMS switch | |
| EP1556877A1 (en) | A micromachined relay with inorganic insulation | |
| Li et al. | Electro-thermally actuated RF MEMS switch for wireless communication | |
| US20040166602A1 (en) | Electro-thermally actuated lateral-contact microrelay and associated manufacturing process | |
| KR100668614B1 (en) | Piezoelectric driven resistance?type RF MEMS switch and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Open date: 20080806 |