CN101231851A - Magnetic read head and magnetic read write system - Google Patents
Magnetic read head and magnetic read write system Download PDFInfo
- Publication number
- CN101231851A CN101231851A CN200710186603.5A CN200710186603A CN101231851A CN 101231851 A CN101231851 A CN 101231851A CN 200710186603 A CN200710186603 A CN 200710186603A CN 101231851 A CN101231851 A CN 101231851A
- Authority
- CN
- China
- Prior art keywords
- magnetic
- film
- conductive layer
- free layer
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/398—Specially shaped layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/11—Magnetic recording head
Abstract
To provide a magnetic head that is suited for high recording density magnetic read and write, and has little noise. A magnetic pinned layer is formed on a non-magnetic electrode layer via a first insulating layer, and a magnetic free layer is formed on a medium-side plane of the non-magnetic electrode layer via a second insulating layer. A circuit for flowing current between the non-magnetic electrode layer and the magnetic pinned layer via the first insulating layer, and a circuit for measuring voltage between the non-magnetic electrode layer and the magnetic free layer are connected to the magnetic free layer. The medium-side plane on which the magnetic free layer is formed may be a plane substantially parallel to the surface of the medium, or may be a plane tilted from the surface of the medium.
Description
Technical field
The present invention relates to have the magnetic head and the magnetic recording system of magneto-resistance effect element.
Background technology
Magnetic recorder/reproducer market requires to improve recording density and surpasses 40% every year, even for the magnetic recording reproduce head corresponding with this magnetic recorder/reproducer, relates to two characteristics of record regenerating, also requires high performance.Wherein, about the magnetic reproduce head, it is important satisfying following 3 technical tasks, that is, and and the raising of the narrow and smallization technology of the raising of the narrow and smallization technology of the raising of high sensitivity technology, track width, regeneration clearance gap.
In recent years, the Study of Interaction or the device development of relevant spin polarized current have been risen.For example, as Electrical detection of spin precession in a metallic mesoscopic spin valve, F.J.Jedema et al.NATURE, VOL 416, pp713-716, it is such that 18 April 2002 are disclosed, and spin polarizability conducts through the above length distance of 100nm for the spinning current of polarization, and the phenomenon that produces magnetic interaction is confirmed by reality.They have prepared different Co fine rule and the perpendicular crossing Al fine rules of rugosity, are formed in the structure that place that Co fine rule and Al fine rule intersect is provided with the screen layer of aluminium oxide.At this moment, electric current to the Al line, because produced the potential difference (PD) that depends on magnetic field between additional C o line that electric current does not circulate during externally-applied magnetic field on film and the Al line, although the gap of fine rule surpasses 500nm, still confirms to be magnetic interaction by thick Co linear flow.This is the effect that spinning polarized electron is accumulated in the interface portion of Al fine rule, extensive region in the fine rule produces owing to the spinning polarized electron of accumulating is distributed in, for example with Physical Review B, Vol.59, No.1, pp93-96, Physical Review B, Vol.65,054401, the represented such form of pp1-17 is carried out theoretical property and is understood.
Generally speaking, in this element, if exist for 2 different magnetics of the coercive force of external magnetic field, the feature that existence produces as output power for the potential change of a side magnetic electric conductor, this current potential has the different respectively feature of polarity when being magnetized to of 2 magnetics is parallel and during antiparallel.In above-mentioned structure, magnetic is simple Co, is the structure that it is connected with Al.This structure at room temperature follows the variation in magnetic field can obtain output power.
Non-patent literature 1:NATURE, VOL 416, pp713-716,18 April 2002
Non-patent literature 2:Physical Review B, Vol.59, No.1, pp93-96
Non-patent literature 3:Physical Review B, Vol.65,054401, pp1-17
Summary of the invention
For utilizing the interactional element of spin polarized current to be applied to magnetic head, the noise that reduces this element is important.Usually, in the noise of Magnetic Sensor, thermonoise, the shot noise that produces when electron tunnel passes through potential barrier of the heat of resulting from, the electromagnetic noise of following the magnetization inversion under high frequency to produce are arranged.Thermonoise is relevant with the element magnetic resistance, and is because the little then value of frequency interdependence is also little, common all the time in any device as white noise basically.Basically because current flowing is had barrier layer and same with TMR, supposition has the influence of thermonoise to this device.Especially, think that the part that electric current directly circulates plays the effect in the source that produces as noise.About electromagnetic noise, and use magnetic and miniaturization smaller volume relevant and produce, thus as countermeasure, do not use magnetic, even or carry out densification and also the volume of element must be remained on more than the certain volume.
The objective of the invention is to, select to be fit to realize the component structure of such characteristic, Magnetic Sensor and the magnetic reproduce head bigger than existing output power is provided.
In the present invention, on the end face of the medium of the non-magnetic conductive layer of accumulating spinning polarized electron, formed the magnetic that constitutes free layer.By this component structure, though regeneration clearance gap narrow and smallization, also the volume that constitutes the magnetic of free layer can be remained on certain more than, and can suppress electromagnetic noise.
Magnetic head of the present invention, have non-magnetic conductive layer, the free layer that on fixed bed that first insulation course forms, face, forms on the non-magnetic conductive layer across second insulation course at the side medium of non-magnetic conductive layer, be used for across first insulation course at the circuit that makes current flowing between magnetic conductive layer and the fixed bed, be used to measure the circuit of the voltage between non-magnetic conductive layer and the free layer.Forming the face of the side medium of free layer, can be the face with the dielectric surface almost parallel, also can be the face that tilts with respect to dielectric surface.
By the present invention, can obtain magnetic head, its easy adjustment element magnetic resistance compared with the past, and, even change rate of magnetic reluctance is very high, high de-agglomeration can be changed also effective and output power is big.In addition, by using this magnetic head, can realize that area recording density surpasses 1000Gb/in
2Magnetic recording system.
Description of drawings
Fig. 1 is the skeleton diagram of expression basic component structure of the present invention.
Fig. 2 is the schematic diagram that effect is accumulated in spin.
Fig. 3 is the schematic diagram that sensing detection is accumulated in spin.
Fig. 4 is the skeleton diagram of the structure of expression reproduce head of the present invention.
Fig. 5 is the location diagram of expression sensor major part of the present invention and medium.
Fig. 6 is the cross-section model of the structure of expression sensor major part of the present invention.
Fig. 7 is the plane model figure of expression about the configuration of second insulation course and free layer.
Fig. 8 is the figure of the structure example of expression fixed bed.
Fig. 9 is the mode chart that the position of expression magnetic shielding and element concerns example.
Figure 10 is the figure of an example of expression reproduce head preparation flow of the present invention.
Figure 11 is the figure of the membrane structure of expression free layer.
Figure 12 is the figure of the relation of expression magnetic energy and KV/kT.
Figure 13 is the figure of the relation of expression free layer volume and KV/kT.
Figure 14 is the basic structure of the regeneration of magnetic head of the present invention.
Figure 15 is the figure of structure example that expression has the combined record of reproduce head of the present invention and write head.
The mode chart of Figure 16 magnetic recorder/reproducer.
Symbol description
101 non-magnetic conductive layers
102 fixed beds
103 first insulation courses
104 free layers
105 second insulation courses
106 power supplys
107 potential difference (PD) are measured circuit
301 dielectric surfaces
501 nonmagnetic materials
502 magnetics
504 magnetics
506 charging currents
507 spinning electrons
801 antiferromagnetic gonosomes
802 magnetics
901 soft magnetic films
902 soft magnetic films
Embodiment
Below, be elaborated to adopting magnetic head of the present invention.
Fig. 1 is the skeleton diagram of expression basic component structure of the present invention.The structure that this element has is, the non-magnetic conductive layer 101 of wire and as the fixed bed 102 of first magnetic, be connected with first insulation course 103 that on non-magnetic conductive layer 101, forms, and, be connected with non-magnetic conductive layer 101 across second insulation course 105 as the free layer 104 of second magnetic in other position of this non-magnetic conductive layer 101.Fixed bed 102 is connected with the power supply 106 that makes current flowing with non-magnetic conductive layer 101, makes electric current circulate through fixed bed 102 and non-magnetic conductive layer 101.In addition, also connecting the circuit 107 of measuring the potential difference (PD) between free layer 104 and the non-magnetic conductive layer 101.
The structural feature of element of the present invention, first insulation course 103 and second insulation course 105 are not formed at the same lip-deep diverse location of the film that constitutes non-magnetic conductive layer 101, as shown in Figure 1, second insulation course 105 and the free layer 104 that forms on this film are disposed at the cross section place that non-magnetic conductive layer 101 is processed.Thus, the size of free layer 104 also can be extended on the element heights direction not only at film thickness direction, makes the active volume of free layer become big, can reduce to result from the electromagnetic noise of thermomagnetization swing.
This element is to use spin to accumulate phenomenon as principle of work.This principle is described simply.As simple example, shown in Fig. 2 (a),,, then there is the free electron that does not have spin polarization in the nonmagnetic material 501 if electric current does not circulate along in the magnetized magnetic 502 of the direction of arrow and the structure that nonmagnetic material 501 is connected.But, shown in Fig. 2 (b) by the interface make current flowing, then electronics (charging current) 506 circulates in circuit, in addition, the spinning electron 507 with magnetic information produces in having a common boundary near interface and is detained, accumulate in the extensive region in nonmagnetic material 501, this is that phenomenon is accumulated in spin.The dimension D of this spinning electron extended area, relevant with the constant of the spin diffusion length that is called material, and by the material of nonmagnetic material 501 or purity, crystalline texture decision.For example the copper of perfect condition or aluminium reach about 1 μ m.
Shown in Fig. 3 (a), in circuit, under the state of current flowing, make another magnetic 504 contact nonmagnetic materials 501 here.At this moment, charging current 506 be can't help nonmagnetic material 501 and is flow to magnetic 504.When the direction of magnetization of the direction of magnetization of magnetic 504 and magnetic 502 was identical as shown, the spinning electron of accumulating in the nonmagnetic material 501 507 can enter in the magnetic 504.This state representation electric conducting state, so the two becomes current potential about equally.On the other hand, shown in Fig. 3 (b), when the direction of magnetization of the direction of magnetization of magnetic 504 and magnetic 502 was reverse, the spinning electron of accumulating in the nonmagnetic material 501 507 can not be entered in the magnetic 504 by the boundary reflection of magnetic 504.This represents electric insulating state, produces the potential difference (PD) suitable with difference in chemical potential between the two.If this potential difference (PD) is thought of as electric signal, in magnetosphere 502 and magnetosphere 504,, can constitute the such structure of magnetic head by having respectively as the fixedly film of common spinning electron valve film and the magnetic function the free layer.This phenomenon, even when surpassing 500nm in the big nonmagnetic material conductive material of spin diffusion length, spin information produces the interaction of magnetoresistive, interacts if distance is short to become big, also exponential function ground increase of output signal.
Here, the performance to element of the present invention describes with the mechanism that manifests effect.Magnetic head of the present invention as described above, is that the magneto-resistance effect element by the accumulating effect that utilizes spinning current constitutes.Utilize the magneto-resistance effect element of the accumulating effect of spinning current to have following mechanism, that is, will be converted to voltage change signal, and obtain output power by the changes of magnetic field that recording medium produces.Fixed bed 102 carries out antiferromagnetic gonosome layer and ferromagnetism body layer in order to magnetize fixing stackedly, utilizes the antiferromagnetism adhesion that the magnetization of ferromagnetic layer whose is fixing in one direction.Perhaps, by the method for shape that changes thickness or live width etc. or the material that adopts different types of magnetic etc., control shape magnetic anisotropy or crystallization magnetic anisotropy, thus give high coercive force.In addition, free layer 104 becomes the structure with multiple material laminateization in order to keep the single magnetic domain state, following structure perhaps is set, that is, form the film of permanent magnet across nonmagnetic film, and add magnetic bias field structure (sealing magnetic line of force structure) etc. by magnetostatic combination.In addition, around free layer, the suitable as shown in Figure 4 soft magnetic film with magnetic shielding function 901,902 that is provided for preventing the external magnetic field influence.This screened film has the soft magnetism of appropriateness, can prevent external world's upset that cross-talk (cross talk) waits.In the example of Fig. 4, magnetic shielding is disposed at the film thickness direction of element film up and down, if be called the shape around component ambient of encirclement type shielding etc., shield effectiveness can be further effective.
The position relation of sensor construction and recording medium is shown in Fig. 5.Omit expression magnetic shielding etc. among this figure.Free layer 104 is disposed at the nearest position of dielectric surface, is subjected to from the influence of the recording magnetic field of recorded information 204 and changes direction of magnetization.At this, be not particularly limited for the shape or the recording mode of medium.Can be fit to use any of record in perpendicular recording, the face, discrete track (discrete track) medium, pattern recording.At this, the track width direction is 201, the element heights direction is 202, the thick direction of mould is 203.
Fig. 6 is illustrated in the center of fine rule width of the non-magnetic conductive layer 101 of Fig. 5, along the figure of the structure example of the section of element heights direction cutting.301 is dielectric surface.Fig. 6 mainly represents the section structure of second insulation course 105 and free layer 104.
Fig. 6 (a) and Fig. 1 are same, the end of the non-magnetic conductive layer 101 of cutting sth. askew, and form second insulation course 105 and free layer 104 at this.Structure example shown in Fig. 6 (a)～(d), form the face of second dielectric film at non-magnetic conductive layer 101 with the angle of the inclination crossing with respect to the complete out of plumb of element heights direction, shown in Fig. 6 (e), also can on the face of the non-magnetic conductive layer 101 that element heights direction approximate vertical intersects, form second dielectric film.Fig. 6 (b) and Fig. 6 (d) are the typical examples about the position that forms second dielectric film 105.In addition, Fig. 6 (c) for the shape of free layer 104, is to become big shape in dielectric surface direction length.Any constructs example, all is in the structure that forms free layer 104 towards end face clamping second dielectric film 105 of the medium of non-magnetic conductive layer 101.
Fig. 7 is the figure of the structure example of the element seen from the element of Fig. 5 top (203 directions) of expression.Diagram has been omitted in magnetic shielding.Fig. 7 also is the configuration of main expression second insulation course 105 and free layer 104.
Fig. 7 (a) expression, second insulation course 105 is bigger than the live width of non-magnetic conductive layer 101, and the height and position of the face relative with medium of free layer 104 is with the roughly consistent structure of non-magnetic conductive layer 101.Fig. 7 (b) expression, free layer 104 and the height and position medium opposite face are compared to the outstanding structure of dielectric surface with non-magnetic conductive layer 101.The variation of the area of Fig. 7 (d) expression second insulation course 105, the example that the width of the track width direction of second insulation course 105 is littler than the live width of non-magnetic conductive layer 101.The variation of the position relation of Fig. 7 (c) expression free layer 104 and non-magnetic conductive layer 101, expression free layer 104 is disposed at the example of the position at the track direction center of departing from non-magnetic conductive layer 101.Among the figure, 401 expressions and magnetic head and the face medium relative direction, around the free layer 104 with coverings such as insulating protective films.301 expression dielectric surfaces.Do not represent the detailed membrane structure of fixed bed 102, only be recited as magnetosphere.About fixed bed 102, as shown in Figure 8, be the rhythmo structure of antiferromagnetic gonosome 801 and magnetic 802, or contain the layer of such rhythmo structure.But, also can be to omit antiferromagnetic gonosome 803 and the monofilm 802 that uses the big material of the such coercive force of FePt, constitute first magnetosphere with such structure.
Fig. 9 is the mode chart of the position relation example of expression magnetic shielding and element.Concrete reproduce head has section configuration as shown in Figure 9.This be component structure with Fig. 7 (c) as typical example, the soft magnetic film 901,902 that has the magnetic shielding function in the configuration up and down of its film thickness direction.Fig. 9 (a) expression soft magnetic film 901 and 902 is independent of the structure of the potential difference (PD) mensuration circuit 107 of free layer 104.At this moment, with the electrode that free layer 104 and non-magnetic conductive layer 101 are electrically connected, be disposed at the about direction of summary paper respectively.Among the figure, this shields soft magnetic film 901,902, only is disposed at the periphery of free layer 104, but also can be the shape that always covers fixed bed.In addition, the structure that is electrically connected with free layer 104 and non-magnetic conductive layer 101 respectively of Fig. 9 (b) expression soft magnetic film 901,902.Fig. 9 (c) is the variation of Fig. 9 (a), in the electrode film the 903, the 904th that the about direction of paper is extended, the visible structure of section.In addition, the space of conductive film periphery can suit to be insulated landfills such as diaphragm.
In order to reduce the electromagnetic noise of this element, magnetospheric volume is important more than certain.Electromagnetic noise is significantly swung relevant with the magnetization of magnetic film owing to heat.Therefore, in order to reduce electromagnetic noise, as the saturated magnetization energy of the staple that constitutes magnetostatic energy K (or E), to thermally-stabilised be important.To M as the saturated magnetization energy
2Calculate with the relation of KV/kt, the variation of standardized M is shown in Figure 12.Thus, KV/kt＞20, M
2Show as about more than 90%, even temperature anomaly M
2Also stabilization roughly.The component structure that can guarantee to satisfy the membrane volume V of these conditions is necessary.
Figure 11 is the figure of other embodiment of the membrane structure of expression free layer 104.So far, free layer 104 is explanations of carrying out as single magnetic, but as shown in figure 11, free layer 104 as a plurality of magnetospheres 1101,1103 across middle layer 1102 and the structure of laminationization also is effective.Magnetosphere 1101,1103, but so long as specify material combination in any as magnetic layer material.In addition, middle layer 1102 is made of the material of lamination combination in the expense of inducing Ru etc. usually.As an example, magnetosphere 1101 is that NiFe, middle layer 1102 are magnetosphere CoFe for the thick Ru of 0.85nm, 1103.
Figure 11 (a) is illustrated in the end of the non-magnetic conductive layer 101 of processing, with free layer 104 and the barrier layer 105 simultaneously parallel examples that carry out the film growth.Figure 11 (b) is such example, promptly, end at the non-magnetic conductive layer 101 that tilts to process forms magnetospheres 1103 across barrier layer 105, and the end of this magnetosphere 1103 is processed into and the dielectric surface almost parallel, forms laminations and forms free layer 104 across middle layer 1102 at this magnetosphere.The free layer 104 of this form carries out diamagnetism ground by mutual magnetosphere and dies down in conjunction with the static magnetic field combination that makes interlayer, and the volume when considering magnetic energy simultaneously becomes the total of whole films, can be very big.In addition, owing to roughly determine, can form desirable free layer by the top ends magnetosphere as the behavioral agent of free layer.
On the other hand, non-magnetic conductive layer 101 desired characteristics are that spin diffusion length is longer.Think that wherein magnetic resistance is very low, the high material of conduction of p electronics or d electronics is effective.Therefore, the non magnetic conductive metal that constitutes by Cu, Au, Ag, Pt, Al, Pd, Ru, C, Mg, Ir, Rh or with GaAs, Si, TiN, TiO, ReO
3For the conductive non-magnetic compound of major component is effective.For example, by reducing the residual magnetic resistance of Cu, increase spin diffusion length when using Cu.Utilize sputtering method at SiO in the ultrahigh vacuum
2The Ta that forms on the substrate (thickness 3nm)/Cu (thickness 30nm) is 300～500nm as the spin diffusion length of the material of the reluctivity of 3～4 μ Ω cm, then surpasses 700nm as the material of the low reluctivity of 2 μ Ω cm.When selecting the low or suitable material of reluctivity, it is important adopting above-mentioned such disposal route that reduces magnetic resistance.
In addition, as the material that constitutes fixed bed 102, free layer 104, be by containing Co, Ni, Fe, Mn or with at least a kind of material that constitutes as the alloy or the compound of major component of these elements.Can consider to have usually the Ni fcc structure, that soft magnetic characteristic is good
80Fe
20, Co
90Fe
10And depart from the interior material of these scopes of forming several percentage points, perhaps wherein add Cr, Ni, Co as the material that adds element.
And then, as magnetosphere, at least in the magnetosphere of free layer side, can be fit to adopt by have the bcc structure with Fe or Co
50Fe
50Alloy film for the representative composition, or the film that constitutes by the compound (CoFeN) of the alloy that comprises Co with non crystalline structure and Fe and the compound (CoFeB) of B, the alloy that comprises the alloy of Co and Fe and the compound of C (CoFeC) or Co and Fe and N, and with these 100～combination of the film of heat-treating in less than 400 ℃ scope.Especially, to be connected with middle layer MgO be important to the free layer that is made of these magnetic materials.The magnetic material of the free layer that makes up in the middle layer that is made of the barrier layer material beyond the MgO can be fit to use above-mentioned material and as whistler (Heusler) alloy or the Fe of the CoFeCrAl of the big magnetic material of semimetal effect etc.
3O
4Deng spinel compound.
In addition, constitute the material of insulation course 103,105, can use by comprising Al
2O
3, AlN, SiO
2, HfO
2, Zr
2O
3, Cr
2O
3, MgO, TiO
2, SrTiO
3At least a the material monofilm or the stack membrane that constitute.Especially, as noted above at the position that constitutes free layer, preferably by with magnetospheric crystallinity MgO or the crystallinity SrTiO of being used in combination
3
These materials are known to TMR element demonstration tunnel magneto-resistance effect.Utilize the high vacuum sputter equipment, on the Ta/Cu/Ta film, form 1nm NiFe layer, 13nm MnPt layer, form 3nm (CoFe) at magnetosphere
60B
40Layer, 1nm MgO layer form 3nm (CoFe) at magnetosphere
60B
40Layer, when 270 ℃ of external magnetic field 6kOe carried out in the magnetic field thermal treatment, the magnetic resistance change rate that can be made into room temperature was 120% film.Existing report, by the various constrained optimizations with film preparation or component fabrication, the magnetic resistance change rate that can prepare room temperature surpasses 200% film.
This has formed desirable spin element, and this element has reflected that the MgO that grows up has shown good (100) orientation and has been very high spin polarizability across the conduction of the bcc of MgO class magnetic material spinning electron on amorphous film.For example, under the situation of 100% magnetoresistance, when magnetic is same material, become 58% spin polarizability merely.
When using antiferromagnetic material, constitute in the film of antiferromagnetic layer 801, PtMn, CrMnPt, MnIr, NiO, PdPtMn etc. are arranged.These being made up of more than the critical film thickness that is determined from several nm to tens nm each, and it is very big by thermal treatment in the magnetic field felicity condition under unidirectional anisotropy to be showed, and are effective for the magnetization of fixed engagement fixed bed 102 partly.
Magnetic domain control about free layer 104, the Hard Magnetic that employing is applicable to general GMR reproduce head is partially during (Hard bias) mode, the permanent magnet that uses in Hard Magnetic inclined to one side (Hard bias) is disposed at the both ends of the track width direction of element film across dielectric film, use reduces the fine magnetic domain that the end of the free layer in element produces from the leakage flux of permanent magnet, can form the domain structure of folk prescription to orientation.As other magnetic domain control mode, across nonmagnetic film permanent magnet is set in other interarea sides of free layer or the connected insulation course of free layer.In addition, as the structure of film in addition, by forming the stack membrane that constitutes by the soft magnetic film that connects the antiferromagnetism film, use from the leakage flux of the end of this permanent magnet or soft magnetic film and to make the mode (CFS (Closed Flux Structure) mode) of the magnetic domain orientation of free layer 104 be effective.Component size is in the scope less than 1 μ m * 1 μ m, and partially the insulativity of the dielectric film of (Hard bias) and the precision of magnetic domain controlling magnetic field significantly reduce can to envision above-mentioned Hard Magnetic.Clearance gap is in the zone less than 50nm, and filming becomes problem, and this mode promises to be mode in the future, and is very effective for membrane structure of the present invention.
Embodiment
At SiO
2Normally used substrate such as substrate or glass substrate (comprises magnesium oxide substrate, GaAs substrate, AlTiC substrate, SiC substrate, Al
2O
3Substrate etc.) on, use the membrane formation device of vacuum sputtering, molecular beam epitaxy (MBE) etc. and make the film film forming of element.For example in the occasion of RF sputtering method, in Ar atmosphere gas, the air pressure of about 1～0.05Pa, the power of 50W～1000W form film down.The matrix that forms element directly uses aforesaid substrate, or uses the substrate that forms dielectric film or suitable base metal film etc. on these substrates.
As an example, Fig. 7 (b) representative, fixed bed 102 connects non-magnetic conductive layers 101 across barrier layer 103, it is as follows that free layer 104 is disposed at the part making method of the shape between non-magnetic conductive layer 101 and the substrate surface 301.Shown in Figure 10 (a), on matrix 1000, form bottom shielding 1001 and dielectric film 1002, painting photoresist uses the lithographic printing of electron beam drawing etc. and forms the pattern of contact hole.This is in order to remove the dielectric film 1002 of contact hole part afterwards, and it can be possible patterning.Illustrated contact hole 1003 parts are ground by argon ion or active-ion-etch (RIE) cutting forms.At this, shown in Figure 10 (b), electrode films 1004 such as constituting Cu, the fixedly stack membrane 1005 and the nonmagnetic film 1006 of film and dielectric film have been formed.This moment, electrode film 1004 became the shape of landfill contact hole.Then, shown in Figure 10 (c), painting erosion resistant agent utilizes lithographic printing, and the electrode wires of fixed processing layer segment connects 1004.And then, the post that processing is made of the film 1006 of the film 1005 of fixed bed and nonmagnetic layer.
Then, shown in Figure 10 (d), purify the surface,, utilize sputtering method to form by the nonmagnetic film 1007 that constitutes with 1006 identical materials at this by the radical ion spray in the vacuum etc.This nonmagnetic film can be the stack membrane that has diaphragm the most surperficial.Painting erosion resistant agent utilizes lithographic plate printing method preparation fine rule shape as shown in the figure thereon.In this occasion, form the back at micro-column and form dielectric film at whole, can carry out ejecting of post 1006 by lifting from method.And then, also can be before formation nonmagnetic film 1007, utilize the lithographic plate printing method of resist and electron beam drawing etc. to form positive pattern (positive pattern), carry out surface cleaning afterwards again and form nonmagnetic film 1007, and can lift from fine rule shape.
Then, shown in Figure 10 (e),, utilize the part of cutting of same lithographic printing and job operation and contact holes contact in the ABS face part nearby of the non magnetic fine rule 1007 for preparing.At this moment, be processed to form the substrate of element by inclination, the processing section becomes inclination.At this, form the free layer 1008 that constitutes by dielectric film and magnetic film, process in top ends and make track width Tw for just.Thus, form the column pattern 1008 of free layer.The formation method also can be used the method for lifting from.Then, shown in Figure 10 (f), under this state, form insulating protective film 1009, and, form contact hole in the part of the column pattern 1008 of free layer.Then further form electrode film 1010, and the fine rule that is formed for transferring.Form dielectric film 1011 thereon.At this, form the corrosion-resisting pattern of shaped as frame shape, and prepare the magnetic film 1012 that top shielding is used.Also can similarly prepare top shielding 1012 even the order of corrosion-resisting pattern and film is opposite.
Viewpoint with film is seen, can consider following structures as the structure of free layer 1008 except simple magnetic film.Form the diaphragm of Ta (thickness 3nm), antiferromagnetism film (thickness 10nm), CoFe film (3nm)/Ru film (0.85nm)/magnetic film CoFeB film (thickness 3nm), MgO film (thickness 2nm), Cu film (thickness 10nm), Ta film (thickness 3nm) etc. in the high vacuum successively, forming such structure is exactly the primary structure of free layer.Thickness in the bracket is an illustration.The structure of this magnetic film is that the magnetosphere 1008 of Figure 10 is rhythmo structure in the expense.The MgO film of barrier layer 103 is direct growth.When this uses ZnO or SrTiO also is same.Form the aluminium film when adopting the barrier layer of aluminium oxide, carry out oxidation processes.The method for oxidation that use this moment can be any of general method for oxidation of autoxidation, plasma oxidation, free-radical oxidation and ozone oxidation etc.Painting erosion resistant agent on this film by using the offset printing method of I line clasfficiator or electron beam, is described the part of the magnetic posts shape (fixed bed) 102,103,101 of 100nm * 100nm.Become thin occasion below number 100nm in length on one side,, therefore describe shape by ArF step, KrF step or electron beam drawing method because I line wavelength resolution has the limit.This film is to use the lapping device of Ar ion to carry out milled processed and forms pattern.After this post surface purifies in a vacuum, and then form Cu film and diaphragm.By the post direction painting erosion resistant agent of the face position relative in the face, thereby form poroid pattern, use FIB bevelling film to preparation with medium.Form the insulator film of MgO etc. thereon, form the CoFeB magnetosphere thereon, make diaphragm, form insulating protective film.Thereafter, the fine rule of preparation non-magnetic conductive layer 101 cuts the magnetosphere thin thread part simultaneously, forms diaphragm thereon, makes free layer 104.The head portion clamping barrier layer of fine rule can form magnetosphere thus.In addition, as the overlapping shielding 901 of Fig. 9 (a), or shown in Fig. 9 (b) or Fig. 9 (c), handle the formation wire structures in top ends.In this preparation, can use the electronics line drawing to paint or steeper method or probe are drawn method.The occasion of the inclined to one side film of Hard Magnetic of preparation free layer, form dielectric film after, preparation is as the film of the CoCrPtZr of permanent magnet etc., and then forms dielectric film., be used to form the describing of Co line (fixed bed) 102, at the antiferromagnetism film of the soft magnetic film that carries out forming after surface cleaning is handled Co and NiFe etc., MnIr etc. thereafter.
As other manufacture method; on the matrix that forms element; after in high vacuum, forming bottom screened film 902 (with reference to Fig. 9 (b)), dielectric film; form the non-magnetic conductive layer 101 that constitutes by the Cu film thereon; utilize the electron beam drawing method to describe the shape of first electrode layer 101 then; utilize polishing to form, and around fine rule, carry out landfill disposal with insulating protective film.Thereafter; describe resist with the form of windowing in the formation first magnetospheric part; cut the surface of this part, append and form Cu film 101, barrier layer 103, magnetic film (fixed bed) 102, antiferromagnetism film, diaphragm oxidation insulating film, form fixed bed 102 by lifting from method.After this, describe to form the second magnetospheric part, cut into processing by FIB with resist.This becomes hole operation, and the angle with lapping device adjustment objective table and Ar ion also can realize even carry out local milled processed.Can form the elecroconductive thin line of the shape of inclination like this in the end of fine rule, at this, in-situ surface purifies the back and forms insulation course, magnetosphere.So just can lift from method, and then in the second magnetospheric top ends, with the medium relative direction nearby can finely describe to make the magnetic head top.
On the other hand, also has such method, promptly, do not carry out the inclined cutting among Fig. 6 (a)～(d) for example for substrate surface portion, as Fig. 6 (e), cut elecroconductive thin line at depth direction from the medium opposite, after purifying the interface, form barrier layer 103 and free layer 104 by molding, finally expose face by the grinding formation on medium opposite from medium subtend face side.Utilize this method, it is such that the section structure of free layer 104 becomes Figure 11 (b).At this moment, as the depth direction cutting process, can use any that comprises grinding, FIB, Wet-type etching.
About the structure of Fig. 1, the typical example of the actual reproduce head structure of making is shown in Figure 14.Its structure is: the non-magnetic conductive layer 101 of the wire of the wide 5～30nm degree that constitutes by Cu and by the fixed bed 102 that magnetic constitutes be connected form on this electric conductor by Al
2O
3First middle layer 103 that constitutes, and, on the position of the 10～1000nm that leaves this non-magnetic conductive layer 101, having the free layer 104 that constitutes by CoFeB, this free layer 105 connects non-magnetic conductive layer 101 across middle layer 105.Be connected the power supply of circulating current in this first magnetic 103 and the non-magnetic conductive layer 101, electric current is flow through.And then, in the top and bottom of the film thickness direction of the matrix of these elements, the soft magnetic film 901,902 that has the magnetic shielding function across the dielectric film configuration.On the soft magnetic film 901 that becomes this top shielding, with the structure formation magnetic head of record with head position.
When the material of non-magnetic conductive layer 101 was 30nm * thickness 30nm as the Co width, the potential difference (PD) V that produces between the free layer 104 of this magnetoresistive transducer and Cu fine rule was if ignore magnetic noise then be about 2mV when electric current is for 1.0mA when experiment.But if the length of the element heights direction of magnetic film is the rectangular parallelepiped that is shaped as of 10nm and free layer 104, then the volume of magnetic film is 9 * 10
-24m
3At this moment, EV/kT is about 5000 big like this.But, under magnetization the situation low or material that anisotropy is little, be about 1500.During the further miniaturization of thickness or width, as smaller volume in the table 1, EV/kT is close to 20.Table 1 is about as magnetostatic energy E=(2 π Ms
2+ K)=8.3 * 10
5J/m
3The NiFe material, and be respectively E=2.9 * 10
6J/m
3, E=2.2 * 10
6J/m
3, E=1 * 10
6J/m
3CoFe, Co, FePt, the relation of volume during to temperature 300K and KuV/kT and magnetosphere volume is summarized.
Table 1
| Element is wide * element height * thickness | Free layer volume V m 3 | EV/kT material: NiFe K=1E3 J/m 3?E＝8.3E5J/m 3、 | EV/kT material: CoFe K=4.5E4J/m 3?E＝2.9E6J/m 3、 | EV/kT material: Co K=4.5E5 J/m 3?E＝2.2E6J/m 3、 | EV/kT material: FePt K=1 E6 J/m 3?E＝1E6?J/m 3、 |
| 30nm×100nm× 30nm 30nm×50nm× 30nm 30nm×30nm× 20nm 30nm×30nm× 10nm 20nm×10nm× 10nm 10nm×10nm× 10nm 7nm×7nm× 2nm | ?9.00E-23 ?4.50E-23 ?1.80E-23 ?9.00E-24 ?2.00E-24 ?1.00E-24 ?0.9e-25 | ?18000 ?9100 ?3600 ?1800 ?400 ?200 ?20 | ?63000 ?32000 ?13000 ?6300 ?1400 ?700 ?69 | ?48000 ?24000 ?9600 ?4800 ?1100 ?530 ?52 | ?19100 ?9530 ?3810 ?1910 ?424 ?212 ?20 |
At this moment, when volume reduced, magnetized as shown in figure 13 effect energy sharply reduced.Figure 13, when using the different material of Ku, expression Ku/kT is with respect to the variation of the volume of film.The volume of attainable magnetic head free layer diminishes by densification, the corresponding therewith usually volume minimizing that causes exponential dependence, and the minimizing of KuV/kT.This occasion is because the swing of heat slightly can cause very big output power change.This is the effect of so-called electromagnetic noise.
In order to suppress electromagnetic noise, be necessary than 20 big EV/kT shown in the dotted line among Figure 13, guarantee that promptly magnetospheric volume V is is necessary more than the certain value.This as shown in Figure 12, KuV/kT 20 becomes big with next magnetized swing, has reduced original magnetic moment thus.Atomic magnetic moment is constant, but shows that the big influence of swing change is bigger.That is, KuV/kT is a condition such below 20, is the condition that considerable influence is arranged as the electromagnetic noise of the noise of following the magnetization swing.
But, be necessary owing to increase resolution, the higher thickness relevant with Gs (distance between shielding gap) is limited.The magnetic head of 1 terabit (terabit)/square inch stage, the width of fine rule are that 25nm, thickness are to be necessary below the 25nm.At this moment, elecroconductive thin line and magnetosphere carry out the shape of lamination, and when lasting till the face relative with medium, and the magnetosphere thickness is when being assumed to 12.5nm always, convert by the condition that surpasses 20 in the curve map of volume and KuV/kT, as long as the element heights direction is about the above length of 14nm.But under the situation of 5 terabits (terabit)/square inch, the width of fine rule is necessary less than 10nm also less than 10nm, thickness.At this moment, under the configuration state of lamination, can not keep structure at conductive film and magnetosphere.Therefore, if under the situation of such structure, promptly free layer is at the part of film section direction contact conducting film, with face that medium is faced mutually on only expose the structure that free layer can adopt the distance of extending element short transverse, and, can make volume for to greatest extent.At this moment, when in the curve map of volume and KuV/kT, converting, as long as the element heights direction has the above length of 25nm by the condition that surpasses 20.
About the structure of Fig. 1 and the structure of Figure 15, be to be example with the occasion of using magnetic CoFeB.Utilize substrate temperature to carry out the preparation of film for the ultravacuum sputter system embrane method of the use argon gas of room temperature.Using the ratio of components of CoFe and B is 6: 4～8: 2, and the ratio of components of Co and Fe is 1: 1～3: 1.At this moment, the crystalline texture of the film of room temperature preparation becomes so-called noncrystalline state.In addition, the CoFe-X compounds of CoFeC, CoFeN etc. also becomes the crystalline texture of amorphous with same ratio of components.On this film, form the MgO film.Use the MgO target in the preparation, with the above-mentioned ultravacuum sputter molding method of using argon gas that can adopt equally.The MgO thickness is that 0.6～2.5nm prepares.The MgO dielectric film that forms on this amorphous film carries out (100) orientation.Similarly form the CoFeB film thereon, form the film of antiferromagnetism film etc. more thereon, like this, prepare the element of 1 μ m * 1 μ m element area, when measuring magnetic resistance change rate, show the TMR of 100% degree under the room temperature.And then, by it is heat-treated, can be made into the film that shows the TMR more than 250% under the room temperature under 300～400 ℃ temperature.More than 400 ℃, cause that other alloy film destroys.At this moment, magnetosphere and barrier layer generation crystallization, its state can be judged by section TEM photo.As its feature,, give electric current the characteristic different to voltage characteristic being under the parallel and antiparallel situation with magnetized state.This occasion, potential barrier is that effectively barrier height is 0.2～0.5eV under the antiferromagnetism state.This is that (half is low like this for 0.8～1.4eV) pact for the barrier height of aluminium oxide oxide.And then the I-V characteristic of straight line roughly under the parastate shows the behavior close with metallicity.Therefore, adopting MgO and CoFeB and the kind similar with it in this element, on the basis of the electrode position of appointment minimizing noise formerly, is very effective.
The magnetic material of the free layer that the middle layer that constitutes with barrier layer material by the appointment beyond the MgO is combined does not adopt CoFeB, and adopts above-mentioned more semimetal (half metal) magnetic material that effect is big.At this moment, as the feature of the material that constitutes the middle layer be, by comprising Al
2O
3, AlN, SiO
2, HfO
2, Zr
2O
3, Cr
2O
3, MgO, TiO
2, SrTiO
3At least a the material monofilm or the stack membrane that constitute.It is characterized in that especially, as noted above at the position that constitutes free layer, use crystallinity MgO or crystallinity SrTiO by making up with magnetosphere
3For example, SrTiO
3Occasion, barrier height is about 0.05～0.1eV.
Figure 15 is a magnetic head structure of the present invention.Reproduce head partly reaches with the position relation of medium and Fig. 4 and Fig. 5 same.Among the figure, a kind of situation as write head of vertical recording head is loaded in expression.On the soft magnetic film 901 of the top magnetic cup barrier that becomes reproduce head, the double record of return yoke (returnyoke) frame 1501 is set, record magnetic pole 1502 is set thereon.Being fit to as this write head material is saturated flux density big (more than the 2.0T), the inefficient big material of appropriateness.Among the present invention, this write head structure can be loaded existing any technology, and preparation is as the magnetic head structure of combination.Variation on the function of the reproducing density that does not cause thus in addition.
Figure 16 is the skeleton diagram that the present invention uses the disk set of magnetic head.Illustrated disk set has, as the disk 1601 of magnetic recording media, be used for data the loading that reads, implements to write the slide block 1606 of magnetic head 1610 of the present invention, make driver 1611 that the assigned position of magnetic head 1610 on disk 1601 move, read, the control device that moves etc. of the transmitting-receiving of the data of write head and Control Driver.Rotatable disk 1601 is supported, is rotated with motor 1603 by driving by turning axle 1602.In the time of disk 1601 rotation, move at magnetic disk surface by slide block 1606, near the assigned position of wanting record data as target.Control device 1612, by each line transmitting-receiving control signal, and the various form meanses of control disk set.
The present invention makes reproducing density surpass 1000Gb/in by load magneto-resistance effect element in this magnetic recording system
2The magnetic recording regeneration in zone becomes possibility.
Claims (9)
1. magnetic head is characterized in that having:
Non-magnetic conductive layer;
The fixed bed that on described non-magnetic conductive layer, forms across first insulation course;
The free layer that on the face of the side medium of described non-magnetic conductive layer, forms across second insulation course;
Be used between described non-magnetic conductive layer and described fixed bed, making the circuit of current flowing across described first insulation course; And
Be used to measure the circuit of the voltage between described non-magnetic conductive layer and the described free layer.
2. magnetic head according to claim 1 is characterized in that, the form with the described free layer of clamping forms magnetic shielding at least.
3. magnetic head according to claim 2 is characterized in that described magnetic shielding has electric conductivity, and constitutes the described part that makes the circuit of current flowing and/or be used to measure the circuit of voltage of being used to.
4. magnetic head according to claim 1 is characterized in that, the face of described side medium is the face with the dielectric surface almost parallel.
5. magnetic head according to claim 1 is characterized in that, the face of described side medium is the face that tilts with respect to dielectric surface.
6. magnetic head according to claim 1 is characterized in that, in the described fixed bed with the face of the offside of the described first insulation course abutted surface on, formed and be used for the fixing film in one direction of the magnetization of this fixed bed.
7. magnetic head according to claim 1, described free layer are with metal film and the magnetic film stacked multilayer film that hockets.
8. magnetic head according to claim 1 is characterized in that, described free layer, and it is with Boltzmann multiplier represented more than 20 times of ambient temperature energy of absolute temperature doubly by saturated magnetization and the magnetostatic energy of magnetic anisotropy calculating and the product of volume.
9. a magnetic recorder/reproducer is characterized in that,
Have: magnetic recording media; Drive the media drive portion of described magnetic recording media; Described magnetic recording media is carried out the magnetic head of record regenerating operation; Described magnetic head is urged to the magnetic head drive division that requires the position of described magnetic recording media;
Described magnetic head has: non-magnetic conductive layer; The fixed bed that on described non-magnetic conductive layer, forms across first insulation course; The free layer that on the face of the side medium of described non-magnetic conductive layer, forms across second insulation course; Be used between described non-magnetic conductive layer and described fixed bed, making the circuit of current flowing across described first insulation course; Be used to measure the circuit of the voltage between described non-magnetic conductive layer and the described free layer.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007-013816 | 2007-01-24 | ||
| JP2007013816A JP4575396B2 (en) | 2007-01-24 | 2007-01-24 | Magnetic head and magnetic recording / reproducing apparatus |
| JP2007013816 | 2007-01-24 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101231851A true CN101231851A (en) | 2008-07-30 |
| CN101231851B CN101231851B (en) | 2010-08-11 |
Family
ID=39641566
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200710186603.5A Expired - Fee Related CN101231851B (en) | 2007-01-24 | 2007-11-14 | Magnetic head and magnetic record reproduction device |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US8139324B2 (en) |
| JP (1) | JP4575396B2 (en) |
| CN (1) | CN101231851B (en) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5375047B2 (en) * | 2008-11-26 | 2013-12-25 | Ｔｄｋ株式会社 | Spin accumulation type magnetic sensor and spin accumulation type magnetic detection device |
| US8760817B2 (en) * | 2009-05-22 | 2014-06-24 | HGST Netherlands B.V. | Three-terminal design for spin accumulation magnetic sensor |
| JP2011018415A (en) * | 2009-07-10 | 2011-01-27 | Tdk Corp | Magnetic sensor |
| JP5734772B2 (en) * | 2011-07-04 | 2015-06-17 | 株式会社日立製作所 | Spin accumulation element, magnetic head, and magnetic recording apparatus |
| JP5935444B2 (en) * | 2012-03-29 | 2016-06-15 | Tdk株式会社 | Spin transport element, and magnetic sensor and magnetic head using spin transport |
| JP6163038B2 (en) * | 2013-07-26 | 2017-07-12 | 株式会社東芝 | Magnetoresistive element, magnetic head, and magnetic recording / reproducing apparatus |
| JP6413428B2 (en) * | 2013-08-02 | 2018-10-31 | Tdk株式会社 | Magnetic sensor, magnetic head, and biomagnetic sensor |
| JP6077076B1 (en) * | 2015-09-11 | 2017-02-08 | 株式会社東芝 | Graphene wiring structure and method for producing graphene wiring structure |
| US9831422B2 (en) | 2015-10-21 | 2017-11-28 | Samsung Electronics Co., Ltd. | Magnetic memory devices having perpendicular magnetic tunnel junction |
| KR20180098230A (en) * | 2015-10-23 | 2018-09-03 | 내셔널 덴텍스 엘엘씨 | Bone base guide system and method |
| US10418545B2 (en) * | 2016-07-29 | 2019-09-17 | Tdk Corporation | Spin current magnetization reversal element, element assembly, and method for producing spin current magnetization reversal element |
| CA3036721A1 (en) * | 2016-09-30 | 2018-04-05 | National Dentex, Llc | Bone foundation guide and method of use |
| US11282538B1 (en) | 2021-01-11 | 2022-03-22 | Seagate Technology Llc | Non-local spin valve sensor for high linear density |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2194438A (en) * | 1938-10-21 | 1940-03-19 | Du Pont | Disposal of waste cyanide solutions |
| US3650949A (en) * | 1969-12-24 | 1972-03-21 | Calgon Corp | Cyanide removal |
| US4091822A (en) * | 1975-04-25 | 1978-05-30 | Loews Theatres, Inc. | Article for the selective removal of hydrogen cyanide from tobacco smoke |
| US4756804A (en) * | 1985-12-18 | 1988-07-12 | Hnu Systems, Inc. | Method of detecting hydrogen cyanide gas in a gaseous or liquid sample |
| US4763674A (en) * | 1986-04-16 | 1988-08-16 | Hercules Incorporated | Method and device for controlling hydrogen cyanide and nitric oxide concentrations in cigarette smoke |
| US5112494A (en) * | 1991-09-03 | 1992-05-12 | Mobil Oil Corporation | Removal of cyanide from water |
| US5701222A (en) * | 1995-09-11 | 1997-12-23 | International Business Machines Corporation | Spin valve sensor with antiparallel magnetization of pinned layers |
| US6001240A (en) * | 1997-07-02 | 1999-12-14 | Mine Safety Appliances Company | Electrochemical detection of hydrogen cyanide |
| US6219212B1 (en) * | 1998-09-08 | 2001-04-17 | International Business Machines Corporation | Magnetic tunnel junction head structure with insulating antiferromagnetic layer |
| US20030089855A1 (en) * | 2000-08-24 | 2003-05-15 | Colorado State University Research Foundation | Detection of ions in a fluid medium |
| US7186379B2 (en) * | 2001-02-07 | 2007-03-06 | Battelle Energy Alliance, Llc | Continuous real-time measurement of aqueous cyanide |
| US6757144B2 (en) * | 2002-01-18 | 2004-06-29 | International Business Machines Corporation | Flux guide read head with in stack biased current perpendicular to the planes (CPP) sensor |
| JP4714918B2 (en) * | 2002-11-29 | 2011-07-06 | 独立行政法人科学技術振興機構 | Spin injection device and magnetic device using spin injection device |
| US7776610B2 (en) * | 2003-05-07 | 2010-08-17 | University Of Wyoming | Cyanide and related species detection with metal surfaces |
| JP4082274B2 (en) * | 2003-05-22 | 2008-04-30 | 株式会社日立製作所 | Magnetic sensor and magnetic head including the same |
| KR100612878B1 (en) * | 2004-12-03 | 2006-08-14 | 삼성전자주식회사 | Magnetic Memory device and methods of manufacturing and operating the same |
| US7403354B2 (en) * | 2005-02-28 | 2008-07-22 | Seagate Technology Llc | Two layer writer heater using writer as one current lead |
-
2007
- 2007-01-24 JP JP2007013816A patent/JP4575396B2/en not_active Expired - Fee Related
- 2007-11-14 CN CN200710186603.5A patent/CN101231851B/en not_active Expired - Fee Related
- 2007-11-16 US US11/984,377 patent/US8139324B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US8139324B2 (en) | 2012-03-20 |
| CN101231851B (en) | 2010-08-11 |
| US20080176107A1 (en) | 2008-07-24 |
| JP4575396B2 (en) | 2010-11-04 |
| JP2008181592A (en) | 2008-08-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101231851B (en) | Magnetic head and magnetic record reproduction device | |
| JP4487472B2 (en) | Magnetoresistive element, magnetic head including the same, magnetic recording apparatus, and magnetic memory | |
| US7072155B2 (en) | Magnetoresistive sensor including magnetic domain control layers having high electric resistivity, magnetic head and magnetic disk apparatus | |
| JP4731393B2 (en) | Magnetic read head | |
| JP5150284B2 (en) | Magnetoresistive element and manufacturing method thereof | |
| KR100372984B1 (en) | Magnetoresistive type magnetic head and magnetic recording and reproducing apparatus | |
| CN100369116C (en) | Magnetic head and magnetic recording/reproducing device | |
| JP5095076B2 (en) | Magnetoresistive effect element | |
| JP5361201B2 (en) | Method for manufacturing magnetoresistive element | |
| JP5032430B2 (en) | Magnetoresistive element manufacturing method, magnetoresistive element, magnetic head assembly, and magnetic recording / reproducing apparatus | |
| KR20000062712A (en) | Magnetoresistance effect element and method for producing the same, and magnetoresistance effect type head, magnetic recording apparatus, and magnetoresistance effect memory element | |
| US8879213B2 (en) | Magneto-resistance effect element, magnetic head, magnetic head assembly, magnetic recording and reproducing apparatus, and method for manufacturing magneto-resistance effect element | |
| KR20060088482A (en) | Enhanced anti-parallel-pinned sensor using thin ruthenium spacer and high magnetic field annealing | |
| US20110205669A1 (en) | Method for manufacturing magneto-resistance effect element, magnetic head assembly, and magnetic recording and reproducing apparatus | |
| JP2008288235A (en) | Magnetic detecting element and manufacturing method thereof | |
| US7773348B2 (en) | High coercivity hard magnetic seedlayer | |
| US20040136120A1 (en) | Three terminal magnetic head and magnetic recording apparatus provided with the said head | |
| JP2006139886A (en) | Magnetoresistive effect magnetic head and its manufacturing method | |
| US6765767B2 (en) | Magnetoresistive head on a side wall for increased recording densities | |
| JP4991901B2 (en) | Magnetoresistive element and magnetic recording / reproducing apparatus | |
| CN100367352C (en) | Magnetoresistive head and magnetic recording-reproducing apparatus | |
| JP2008041163A (en) | Current perpendicular-to-plane magnetoresistance effect head | |
| JP3420152B2 (en) | Magnetoresistive head and magnetic recording / reproducing device | |
| JP2008016738A (en) | Magnetoresistance effect element, magnetic head, magnetic recording and reproducing device, and magnetic memory | |
| JP2003318462A (en) | Magnetoresistance effect element and magnetic head and magnetic memory using the element |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100811 Termination date: 20151114 |
|
| EXPY | Termination of patent right or utility model |