CN101215151A - Ferroelectric materials with great dielectric tuning effect - Google Patents
Ferroelectric materials with great dielectric tuning effect Download PDFInfo
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- CN101215151A CN101215151A CNA2008100562126A CN200810056212A CN101215151A CN 101215151 A CN101215151 A CN 101215151A CN A2008100562126 A CNA2008100562126 A CN A2008100562126A CN 200810056212 A CN200810056212 A CN 200810056212A CN 101215151 A CN101215151 A CN 101215151A
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- ferroelectric material
- dielectric tuning
- tuning effect
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Abstract
The invention discloses a ferroelectric material with great dielectric tuning effect, the chemical formula of which is (Lu1-xRx)(Fe2-yMy)O4, wherein R is a heavy rare earth element, M is a transition metal element and x and y stand for content of atomic percent with 0<=x<=1 and 0<=y<=1. The invention has high dielectric constant (>10000), simultaneously, the invention can generate comparatively large dielectric tuning amount by additionally adding a quite small biased electric field, and the ferroelectric material can be guaranteed to generate comparatively large dielectric tuning amount in a comparatively wide temperature range near room temperature , thereby the invention has tremendous value in industrial application.
Description
Technical field
The present invention relates to a kind of ferroelectric material, refer to the very high ferroelectric material of a kind of rate of dielectric tuning at room temperature especially.
Background technology
Ferroelectric material has higher dielectric constant and bigger dielectric tuning rate, utilizes these characteristics, can develop a lot of electron devices, as electrically tunable filter, and the electronic tuning antenna that shakes, phase shifter, dielectric amplifier, adjustable condenser or the like.The ferroelectric material such as the Ba that are used for dielectric tuning at present
xSr
1-xTiO
3, need add bigger bias field (about tens kv/cm) and could produce enough big dielectric tuning amount.For polycrystalline or single crystal material, this means that the volts DS that need add kilovolt can produce effective dielectric tuning, therefore has very big restriction to practical application.In addition, most of ferroelectric material only shows bigger dielectric tuning effect at low temperatures, and near the material that has big dielectric tuning effect room temperature seldom.
Summary of the invention
At the problem that prior art exists, the object of the present invention is to provide the very little bias field of a kind of utilization at room temperature just can produce the ferroelectric material of effective dielectric tuning.
For achieving the above object, a kind of ferroelectric material of the present invention with great dielectric tuning effect, its chemical formula is (Lu
1-xR
x) (Fe
2-yM
y) O
4, wherein R is a heavy rare earth element, M is a transition metal, and 0≤x≤1,0≤y≤1, x, y represents atom percentage content.
Further, described heavy rare earth element is Ho, Er, Tm, Yb or Y.
Further, described transition metal is Mn, Co, Cu, Zn or Mg.
Further, the chemical formula of described ferroelectric material is LuFe
2O
4
Further, the specific form of described ferroelectric material is polycrystalline ceramics, monocrystalline or film.
The invention provides a kind of ferroelectric material with great dielectric tuning effect, at room temperature this ferroelectric material has very high specific inductivity (＞10000), simultaneously, add very little bias field thereon and just can produce bigger dielectric tuning amount, and described ferroelectric material can guarantee can produce bigger dielectric tuning amount near the temperature range of broad room temperature, therefore, the present invention has great value on industrial application.
Description of drawings
Fig. 1 is that the specific inductivity of sample concerns with variation of temperature under zero offset electric field and 50V/cm bias field;
Fig. 2 be sample specific inductivity at room temperature (300K) with the variation relation of bias field;
Fig. 3 is the variation relation of the relative dielectric tuning rate of sample with temperature and frequency.
Embodiment
Ferroelectric material with great dielectric tuning effect of the present invention adopts solid reaction process sintering preparation in a vacuum.With powder X-ray diffractometry the sample for preparing is carried out structure and material phase analysis, it is well single-phase to show that sample has.With the dielectric properties of ZM2353 type electric impedance analyzer measure sample, survey frequency is from 10kHz to 200kHz.The direct current biasing electric field is provided by a Keithley 2400 type voltage sources.Measure temperature from 100K to 320K, by a superconducting quantum interference device (SQUID) temperature controlling system control.
Embodiment 1: preparation LuFe
2O
4The polycrystalline sample
With 2.8370 gram purity is 99.99% Lu
2O
3, 1.8975 gram purity are 99.9998% Fe
2O
3And 0.2654 gram purity be 99.99% Fe powder mixes, agitation grinding is used the powder compressing machine compression molding to evenly, puts into silica tube, vacuumizes sealing, 1100 ℃ of sintering 48 hours, naturally cools to room temperature with stove.With powder X-ray diffractometry the polycrystalline sample for preparing is carried out structure and material phase analysis, show the LuFe of generation
2O
4Sample has well single-phase.
The LuFe that surveys
2O
4The variation of the dielectric constant with temperature of sample as shown in Figure 1.Sample has very high specific inductivity near room temperature.Add a very little direct current biasing electric field (50V/cm), specific inductivity is greatly reduced.
The LuFe that surveys
2O
4The specific inductivity of sample at room temperature with the variation that adds bias field as shown in Figure 2.With the increase that adds bias field, specific inductivity descends rapidly.
The LuFe that surveys
2O
4The relative dielectric tuning rate of sample with the variation of temperature and frequency as shown in Figure 3.In the very wide warm area, the dielectric tuning rate all keeps a very high value (＞30%) relatively near room temperature.
Embodiment 2: preparation YbFe
2O
4The polycrystalline sample
At LuFe
2O
4On the material foundation, to Lu bit position or replacing whole, can form a series of derivative compounds by rare earth element (comprising Ho, Er, Tm, Yb and Y etc.) with other neighbours.These derivatives and LuFe
2O
4Have identical crystalline structure and similar dielectric properties.In this example, we substitute the Lu element fully with the Yb element and form YbFe
2O
4With 2.8251 gram purity is 99.99% Yb
2O
3, 1.9080 gram purity are 99.9998% Fe
2O
3And 0.2669 gram purity be 99.99% Fe powder mixes, agitation grinding is used the powder compressing machine compression molding to evenly, puts into silica tube, vacuumizes sealing, 1100 ℃ of sintering 48 hours, naturally cools to room temperature with stove.With powder X-ray diffractometry the sample for preparing is carried out structure and material phase analysis, show the YbFe of generation
2O
4Sample has well single-phase.
Embodiment 3: preparation LuFeCuO
4The polycrystalline sample is at LuFe
2O
4On the material foundation,, can form a series of derivative compounds by the Fe bit position being substituted with other transition metals (comprising Mn, Co, Cu, Zn and Mg etc.).These derivatives and LuFe
2O
4Have similar crystalline structure and similar dielectric properties.In this example, we form LuFeCuO with half Fe of Cu element substitution
4With 2.7761 gram purity is 99.99% Lu
2O
3, 1.1141 gram purity are 99.9998% Fe
2O
3And 1.1099 gram purity be 99.99% CuO powder mixes, agitation grinding is used the powder compressing machine compression molding to evenly, puts into silica tube, vacuumizes sealing, 1100 ℃ of sintering 48 hours, naturally cools to room temperature with stove.With powder X-ray diffractometry the sample for preparing is carried out structure and material phase analysis, show the YbFe of generation
2O
4Sample has well single-phase.
It is the form of polycrystalline sample that above-mentioned 3 embodiment have only lifted ferroelectric material, ferroelectric material can also be prepared monocrystalline or form of film by different preparation methods, for example at first utilize the vacuum solid reaction process to prepare monophasic polycrystalline cylindrical sample, put it into then in the optics float-zone method monocrystal growing furnace, in suitable argon atmospher, just can grow single crystal samples.In addition, thin-film material can adopt magnetron sputtering method, pulsed laser deposition or the preparation of laser molecular beam epitaxy method.At first utilize the vacuum solid reaction process to prepare the single-phase polycrystalline target, and then utilize one of above three kinds of methods preparation thin-film material.
Claims (5)
1. a kind of ferroelectric material with great dielectric tuning effect of the present invention is characterized in that, the chemical formula of this ferroelectric material is (Lu
1-xR
x) (Fe
2-yM
y) O
4, wherein R is a heavy rare earth element, M is a transition metal, and 0≤x≤1,0≤y≤1, x, y represents atom percentage content.
2. the ferroelectric material with great dielectric tuning effect as claimed in claim 1 is characterized in that, described heavy rare earth element is Ho, Er, Tm, Yb or Y.
3. the ferroelectric material with great dielectric tuning effect as claimed in claim 1 is characterized in that, described transition metal is Mn, Co, Cu, Zn or Mg.
4. the ferroelectric material with great dielectric tuning effect as claimed in claim 1 is characterized in that, the chemical formula of described ferroelectric material is LuFe
2O
4
5. the ferroelectric material with great dielectric tuning effect as claimed in claim 1 is characterized in that, the specific form of described ferroelectric material is polycrystalline ceramics, monocrystalline or film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008100562126A CN101215151A (en) | 2008-01-15 | 2008-01-15 | Ferroelectric materials with great dielectric tuning effect |
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|---|---|---|---|
| CNA2008100562126A CN101215151A (en) | 2008-01-15 | 2008-01-15 | Ferroelectric materials with great dielectric tuning effect |
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|---|---|
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|---|---|---|---|
| CNA2008100562126A Pending CN101215151A (en) | 2008-01-15 | 2008-01-15 | Ferroelectric materials with great dielectric tuning effect |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022017543A3 (en) * | 2020-07-23 | 2022-03-17 | 李笑天 | Method for using rare earth element-iron oxide to prepare blank |
| CN114716240A (en) * | 2022-03-30 | 2022-07-08 | 电子科技大学 | Preparation method of high-mechanical-property low-loss MnZn power ferrite material |
-
2008
- 2008-01-15 CN CNA2008100562126A patent/CN101215151A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022017543A3 (en) * | 2020-07-23 | 2022-03-17 | 李笑天 | Method for using rare earth element-iron oxide to prepare blank |
| CN114716240A (en) * | 2022-03-30 | 2022-07-08 | 电子科技大学 | Preparation method of high-mechanical-property low-loss MnZn power ferrite material |
| CN114716240B (en) * | 2022-03-30 | 2023-01-03 | 电子科技大学 | Preparation method of high-mechanical-property low-loss MnZn power ferrite material |
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Open date: 20080709 |