CN101211936A - Image sensor and manufacturing method thereof - Google Patents
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- CN101211936A CN101211936A CNA2007101612325A CN200710161232A CN101211936A CN 101211936 A CN101211936 A CN 101211936A CN A2007101612325 A CNA2007101612325 A CN A2007101612325A CN 200710161232 A CN200710161232 A CN 200710161232A CN 101211936 A CN101211936 A CN 101211936A
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- 238000000034 method Methods 0.000 claims abstract description 48
- 230000002209 hydrophobic effect Effects 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 239000000463 material Substances 0.000 claims description 68
- 238000000059 patterning Methods 0.000 claims description 30
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 26
- 230000015572 biosynthetic process Effects 0.000 claims description 15
- 238000010992 reflux Methods 0.000 claims description 14
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- 238000001312 dry etching Methods 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 5
- 230000000717 retained effect Effects 0.000 claims 1
- 230000002401 inhibitory effect Effects 0.000 abstract 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 15
- 238000002161 passivation Methods 0.000 description 9
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- 238000010438 heat treatment Methods 0.000 description 6
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- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
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- 239000004065 semiconductor Substances 0.000 description 2
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- 241001074085 Scophthalmus aquosus Species 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
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Abstract
An image sensor and method for fabricating an image sensor are provided. The image sensor includes a substrate and a microlens array in a checkerboard pattern wherein the microlens array comprises a first set of microlenses and a second set of microlenses. In some embodiments, the first set of microlenses and the second set of microlenses involve alternating hydrophilic and hydrophobic microlenses. The image sensor is capable of inhibiting the generation of a lens bridge between neighboring pixels of a microlens and forming a microlens having a zero gap to improve the characteristics of a device.
Description
Technical field
The present invention relates to transducer, particularly imageing sensor and manufacture method thereof.
Background technology
Imageing sensor is the semiconductor device that optical imagery is converted to the signal of telecommunication.At the aspect of performance of determining imageing sensor, manufacturing process is very important.Two important process are the formation technology of color filter array (CFA) and lenticule (ML).
Form in the technology at lenticule, between contiguous microlens, form the gap usually.These gaps cause sensor performance to incur loss.Study and simulate and demonstrate out for several, when the gap was little, the photosensitivity of imageing sensor can improve more than 15%.
Typical lenticule forms the organic material that technology is used photoresist (PR) form in the prior art, wherein may use the hot reflux of heat energy.Especially, at first form pattern in the position that lens will be set by the photoetching method of implementing the use photo anti-corrosion agent material.Next, heat energy is applied on the above-mentioned material with its backflow, thereby forms the ball-type curve; Afterwards, with its cooling, thereby finish the manufacturing of lens.
Form in the technology at typical lenticule, the width in the gap between the lenticule is by the pattern that forms by photoetching before the material reflow is determined.Therefore, because the restriction of photoetching resolution at present, minimum gap width is confined to about 50nm usually, and, when reflow materials so that the gap between the lenticule is when being too narrow to less than 50nm, contiguous microlens just may combine during reflux technique, has produced the possibility of formation lens bridges (lens bridge).Thus, present lenticule formation technology can not form the lenticule with complete zero clearance.
Owing to when hydrophobic material is in contact with one another, for example when hydrophobicity photoresist and adjacent hydrophobicity lens are in contact with one another, has mixing phenomena, so produce the lens bridge.Two water droplets are in contact with one another and the similar phenomena when combining on this phenomenon and the windowpane.As shown in Figure 1, under fluid state, have the viscosity of predetermine level, therefore between the photoresist 1 that is used to form lens, form mild bend usually, produce the lens bridge thus because be used to form the photoresist of lens.
Summary of the invention
The invention provides a kind of imageing sensor with and manufacture method, it can be suppressed at and produce the lens bridge between the lenticule of neighbor and form the lenticule with zero clearance, thereby improves Devices Characteristics.
Imageing sensor of the present invention comprises: microlens array is formed on the substrate, and comprises first group of lenticule and second group of lenticule; Wherein first group of lenticule and second group of lenticule are arranged in the draughtboard pattern.
The method of shop drawings image-position sensor of the present invention may further comprise the steps: form microlens array on substrate, this microlens array comprises first group of lenticule and second group of lenticule; Wherein first group of lenticule and second group of lenticule are arranged in the draughtboard pattern.
Imageing sensor according to the embodiment of the invention of above-mentioned theme comprises: substructure has photodiode; Passivation layer is formed at the substructure top; And microlens array, be formed on the passivation layer, and have first group of lenticule making by water wetted material and second group of lenticule making by hydrophobic material.
According to the embodiment of the invention, the manufacture method of imageing sensor comprises: formation has the substructure of photodiode; Above substructure, form passivation layer; Above passivation layer, form planarization layer; Above planarization layer, form first photosensitive film of patterning; Form the sacrifice lenticule by heat treatment to first photosensitive film; On planarization layer, form first group of lenticule, wherein will sacrifice lenticular shape and transcribe this first group of lenticule by etch process; In the gap that constitutes between first group of lenticular lenticule, form second photosensitive film of patterning; With form by first group of lenticule and second group of microlens array that lenticule constitutes, wherein second group of lenticule formed by heat treatment by second photosensitive film.
Imageing sensor comprises according to another embodiment of the present invention: planarization layer forms and is patterned into first and second zones, and forms to such an extent that make the upper surface of second area more outstanding than the upper surface of first area; And microlens array, have the first group of lenticule that is formed on the first area and be formed at second group of lens on the second area.
Imageing sensor according to yet another embodiment of the invention comprises: hydrophilic layer; Planarization layer forms and is patterned into first and second zones that are positioned on the hydrophilic layer, and the first area forms and makes hydrophilic layer come out, and second area forms and makes hydrophilic layer not come out; And microlens array, have at the first group of lenticule that forms on the first area and second group of lenticule on second area, forming.
Manufacture method according to the imageing sensor of the embodiment of the invention comprises: form planarization layer, by this planarization layer patterning is divided into first area and second area, and the upper surface of second area is more outstanding than the upper surface of first area; Have first and second group lenticular microlens arrays forming first group of lenticule on the first area and on second area, forming second group of lenticule and form with passing through.
The manufacture method of imageing sensor comprises according to another embodiment of the present invention: form hydrophilic layer; Form planarization layer, the patterning by this planarization layer being divided into first and second zones that are positioned on the hydrophilic layer, the first area is formed and makes hydrophilic layer come out, and second area is formed and makes hydrophilic layer not be exposed; With form microlens array, it has at the first group of lenticule that forms on the first area and second group of lenticule forming on second area.
The present invention can be suppressed at and produce the lens bridge between the neighbor in the microlens array, and forms and have the microlens array of zero clearance, thereby improves device property.
Description of drawings
Fig. 1 shows the lens bridge by the manufacture method generation of prior art imageing sensor.
Fig. 2 to Fig. 7 is the figure that illustrates according to the method for making image sensor of the embodiment of the invention.
Fig. 8 shows the imageing sensor according to the embodiment of the invention, wherein in the amplification mode contiguous microlens with lens bridge is shown.
Fig. 9 to Figure 12 is the figure that illustrates according to the manufacture method of the imageing sensor of the embodiment of the invention.
Figure 13 to Figure 17 is the figure that illustrates according to the manufacture method of the imageing sensor of the embodiment of the invention.
Embodiment
In this manual, if relate to layer, zone, pattern or structure, when use term " on " or when " top ", be interpreted as this layer, zone, pattern or structure and be located immediately on another layer or the structure, perhaps also have intermediate layer, zone, pattern or structure.In this manual, if relate to layer, zone, pattern or structure, when using term D score or " below ", be interpreted as this layer, zone, pattern or structure and be located immediately under another layer or the structure, or also have intermediate layer, zone, pattern or structure.
With reference to figure 2.In the embodiment of manufacture method of the present invention, before forming lenticule (ML) pattern, form lower layer 3.Can be by dry etching method, come etching lower layer 3 as reactive ion etching (RIE).In a lot of embodiment, lower layer 3 is formed by water wetted material.
In a particular embodiment, lower layer 3 is as the planarization layer of color filter array.In an embodiment, comprising below the color filter array: substructure and the passivation layer that is formed on this substructure with photodiode.Do not need to be designed among the embodiment of color filter array on top at imageing sensor, lower layer 3 can be for use as extra play.
In many examples, the material of formation planarization layer is visible light transmissive well, therefore has ghosting rate (imaginary reflective index) (k～0).In typical imageing sensor, color filter array is formed on the top of imageing sensor usually, and planarization layer is formed by hydrophobic material.Yet in certain embodiments of the invention, hydrophobic material is formed at the below of microlens array.
For example, can use low temperature oxide (LTO) as tetraethoxysilane (TEOS).In the embodiment that uses the TEOS material, low-temperature oxidation (LTO) method that employing can deposit under about 220 ℃ temperature conditions.
In the embodiment in conjunction with TEOS, because the conformal nature (conformal property) of TEOS, the shoulder height difference of color filter array can not eliminated after deposition fully.Yet when depositing, the spreadability of TEOS is good.Therefore, aspect the step height change at the interface, TEOS can play an important role between the minimizing neighbor.
In the embodiment of the color filter array that image sensor design is become not need top, below microlens array, form the passivation layer of planarization, thereby can adopt the chemical vapor deposition (CVD) method to form the TEOS layer.The layer that combines TEOS can be used for one group of lenticule extraly.
TEOS has null value ghosting rate (RI) under visible wavelength, simultaneously, it can come etching by dry etching method.Therefore, TEOS can be as the lower layer of microlens array.
In a lot of embodiment, the lower layer 3 that is used to form microlens array is thicker than being used to form lenticular typical layers.Because photosensitive film is by dry etching method, form with the form of microlens array, and transcribed lower layer 3, therefore should consider the material thickness of lower layer 3.TEOS has about 1.4 real reflectivity (real reflective index, RI) value at visible wavelength.Therefore, suppose that the distance to the bottom photodiode is near 3 to 4 microns from microlens array, then the thickness of lower layer 3 can be about 500nm.
As shown in Figure 3, in a lot of embodiment, form just be thicker than the lower layer 3 of lenticule thickness after, form photosensitive film 5 and by photoetching method with photosensitive film 5 patternings.Be not that whole pixels are all formed pattern, but with draughtboard (checkerboard) form, every a pixel formation pattern, promptly making does not have pattern in adjacent pixels.
With reference to figure 4, after the pattern of the photosensitive film that forms the draughtboard form, photosensitive film is formed sacrifice lenticule 5a once more by the hot reflux method.
With reference to figure 5, after finishing sacrifice lenticule 5a, the material that is provided with as lower layer 3 is carried out body (bulk) etching by dry etching method.In one embodiment, above-mentioned etching is a kind of reactive ion etching (RIE) technology.Form thus and transcribed the first group of lenticule 3b that sacrifices microlens shape.First group of lenticule 3b forms every a pixel on lower layer 3a, is the backgammon plate-like and arranges.Correspondingly, in a lot of embodiment, first group of lenticule 3b formed by water wetted material.For example, the material of lower layer 3 is TEOS.
As shown in Figure 6, at the pixel region place between the formed first group of lenticule 3b of water wetted material, can form the photosensitive film 7 that is the arrangement of backgammon plate-like by photoetching method.In an embodiment, photosensitive film 7 can be formed by photosensitive hydrophobic material.In photoetching process, can use photomask by mode vertical and that flatly move with pel spacing.
With reference to figure 7, in a lot of embodiment, form second group of lenticule 7a by Technology for Heating Processing such as hot reflux.Second group of lenticule 7a can be formed by hydrophobic material.Correspondingly, can form the microlens array that comprises first group of lenticule 3b and second group of lenticule 7a.
As shown in Figure 8, because the pixel lenticule is alternately to be formed by hydrophilic and hydrophobic material respectively, so can between the lenticule of the lenticule of a pixel and neighbor, not form bridge.
The principle that does not form the lenticule bridge do not mix mutually with water droplet with oil droplet and when oil droplet is in side waterborne the principle of formation sharp interface similar.By manufacture method according to the imageing sensor of the embodiment of the invention, the pattern dimension of second group of lenticule 7a that can adjust first group of lenticule 3b forming by water wetted material and form by hydrophobic material, so can realize having the microlens array of complete zero clearance.
In a lot of embodiment, first group of lenticule 3b is different with real reflectivity (RI) value of second group of lenticule 7a.Therefore, can adjust lenticular thickness based on first and second groups of lenticular materials.In a particular embodiment, first and second groups of lenticular focal lengths (focus distance) can be identical.
In the embodiment of complementary metal oxide semiconductors (CMOS) (CMOS) type imageing sensor, from lenticule to the distance between the photodiode is about 3 to 4 microns, the TEOS that will have about 1.4 real reflectivity (RI) values is as first group of lenticular material, and first group of lenticular thickness is about 450nm.In an embodiment, second group of lenticule is by having the photosensitive film formed of 1.6 to 1.7 real reflectivity (RI) values at visible wavelength, and second group of lenticular thickness is about 350nm.
Imageing sensor and manufacture method according to the embodiment of the invention have the following advantages: be suppressed to produce the lens bridge between the neighbor of microlens array and form and have the microlens array of zero clearance, thereby improve device property.
Fig. 9 to Figure 12 is the figure that illustrates according to the method for making image sensor of another embodiment.
With reference to figure 9, can form planarization layer 11.
The material of formation planarization layer 11 is visible light transmissive well, therefore has ghosting rate (k～0).In comprising the embodiment of color filter array, will inlay technology in (mosaic) scheme and be used for imageing sensor and form planarization layer 11.In the alternative embodiment that does not comprise color filter array, planarization layer 11 is formed directly on the passivation layer.
As shown in Figure 10, in a lot of embodiment, passivation layer 11 is divided into first area and second area, and these zones of patterning, so that the upper surface of second area is more outstanding than the upper surface of first area.
In a lot of embodiment, the patterning of planarization layer 11 is undertaken by photoetching process.
In one embodiment, first and second zones of patterning form and have the square of pel spacing size.These square can being patterned into are the form that the backgammon plate-like is arranged.
With reference to Figure 11, on the first area of the planarization layer 11a of patterning, be formed for forming first photosensitive film 13 of microlens array, and on the second area of the planarization layer 11a of patterning, be formed for forming second photosensitive film 15 of microlens array.In a particular embodiment, first photosensitive film 13 and second photosensitive film 15 each all form by hydrophobic material.In one embodiment, first photosensitive film 13 and second photosensitive film 15 each all form by water wetted material.In alternative embodiment, first photosensitive film 13 is formed by water wetted material, and second photosensitive film 15 is formed by hydrophobic material.
As shown in Figure 12, among a lot of embodiment, microlens array is by heat-treating formation.In one embodiment, heat treatment is hot reflux.
In a lot of embodiment, first group of lenticule 13a is formed on the first area 13, and second group of lenticule 15a be formed on the second area 15, thereby forms the microlens array with first and second groups of lenticules (being respectively 13a and 15a).
In a lot of embodiment, on the lower layer between the lenticule of neighbor, form projection and depression, to suppress to produce the lens bridge.
The planarization layer that light-sensitive material below projection that repeats in each pixel and depression can be used for example by lenticule on the layer is made forms, and produces the lens bridge in the thermal reflux thereby can be suppressed at effectively.
In a particular embodiment, formation has the substructure of photodiode on the lower layer of planarization layer.In one embodiment, on substructure, form color filter array.
Figure 13 to 17 is the figure that illustrate according to the manufacture method of the imageing sensor of another embodiment.
With reference to Figure 13, can form hydrophilic layer 21.
In one embodiment, formation has the substructure of photodiode below hydrophilic layer 21.In a further embodiment, on the substructure below the hydrophilic layer 21, form color filter array.
With reference to Figure 14 and Figure 15, can above hydrophilic layer 21, form planarization layer 23, and can carry out Patternized technique planarization layer 23.
In a particular embodiment, planarization layer 23 can be divided into first area and second area on hydrophilic layer 21.In one embodiment, the first area forms and exposes hydrophilic layer 21, and second area forms and do not expose hydrophilic layer 21.The planarization layer 23 of patterning is to form in the mode that does not reflux in Technology for Heating Processing subsequently.
With reference to Figure 16, on the first area that exposes hydrophilic layer 21, be formed for forming first photosensitive film 25 of microlens array, and on the second area that does not expose hydrophilic layer 21, be formed for forming second photosensitive film 27 of microlens array.In one embodiment, first photosensitive film 25 and second photosensitive film 27 each all form by hydrophobic material.In alternative embodiment, each is all formed first photosensitive film 25 and second photosensitive film 27 by water wetted material.In other embodiments, first photosensitive film 25 is formed by water wetted material, and second photosensitive film 27 is formed by hydrophobic material.
As shown in Figure 17, in a particular embodiment, microlens array is by heat-treating formation.In one embodiment, heat treatment is hot reflux.
In a particular embodiment, first group of lenticule 25a forms on the first area, and forms second group of lenticule 27a on second area, thereby forms the microlens array with first and second groups of lenticules (being respectively 25a and 27a).At first and second groups of lenticules is among the embodiment that is formed by hydrophobic material, and each the lenticular datum width (base width) among first group of lenticule 25a is all greater than the datum width of each lens among second group of lenticule 27a.For the situation that second photosensitive film 27 refluxes sooner than first photosensitive film 25, can carry out the adjustment of this datum width.
In a lot of embodiment, on the lower layer between the lenticule of neighbor, form projection and depression, produce the lens bridge in the thermal reflux to be suppressed at.
In one embodiment, hydrophilic layer 21 is formed at planarization layer 23 belows, so the recess of projection and depression has the water-wet behavior of hydrophilic layer 21, and its bossing has the hydrophobic property of planarization layer 23.Therefore, when forming water-wetted surface and hydrophobic surface, in the backgammon plate-like is arranged, just repeat the hydrophilic/hydrophobic surface every a pixel with the formation lenticule.When the photosensitive film to hydrophobic material carries out hot reflux, the dynamics that projection that forms on lower layer and depression control reflux, and hydrophilic/hydrophobic surface control surface tension force, thus can suppress to produce the lens bridge.
Any quoting to " embodiment ", " embodiment ", " exemplary embodiment " etc. in specification means that all special characteristic, structure or the characteristic described in conjunction with this embodiment comprise at least one embodiment of the present invention.These phrases that many places occur in specification might not all relate to same embodiment.In addition, when describing special characteristic, structure or characteristic, should think and realize that in conjunction with other embodiment these features, structure or characteristic are in those skilled in the art's the scope in conjunction with any embodiment.
Although described the present invention in conjunction with a plurality of exemplary embodiments, should be understood that those skilled in the art can derive many other variations and embodiment, these change and embodiment will fall within the spirit and scope of principle of the disclosure of invention.Especially, multiple changes and improvements are carried out in the arrangement in can be in the scope of this specification, accompanying drawing and claims assembly and/or annex combination being provided with.Except that the changes and improvements of assembly and/or arrangement, the application of other replaceabilities also is conspicuous to those skilled in the art.
Claims (19)
1. imageing sensor comprises:
Microlens array is formed on the substrate, and comprises first group of lenticule and second group of lenticule;
Wherein said first group of lenticule and described second group of lenticule are arranged in the draughtboard pattern.
2. imageing sensor as claimed in claim 1, wherein said first group of lenticule comprises water wetted material, and described second group of lenticule comprises hydrophobic material.
3. imageing sensor as claimed in claim 2 wherein is used to form described first group of described water wetted material of a lenticular part and is retained on the described substrate that is positioned at described first and second groups of lenticules below.
4. transducer as claimed in claim 1 also comprises:
The water wetted material layer comprises the groove that is arranged in the draughtboard pattern that forms on the described substrate;
Wherein said first group of lenticule is formed in the described groove of described water wetted material layer, and described second group of lenticule is formed on the top surface of described water wetted material layer.
5. imageing sensor as claimed in claim 4, wherein said first group of lenticule and described second group of lenticule all comprise hydrophobic material.
6. imageing sensor as claimed in claim 1 also comprises:
The water wetted material layer is formed on the described substrate; With
The hydrophobic material layer of patterning is formed on the described water wetted material layer, is the backgammon plate-like and arranges;
Wherein said first group of lenticule is formed on the described water wetted material layer, and described second group of lenticule is formed on the hydrophobic material layer of described patterning.
7. imageing sensor as claimed in claim 6, wherein said first group of lenticule and described second group of lenticule all comprise hydrophobic material.
8. the method for a shop drawings image-position sensor may further comprise the steps:
Form microlens array on substrate, this microlens array comprises first group of lenticule and second group of lenticule;
Wherein said first group of lenticule and described second group of lenticule are arranged in the draughtboard pattern.
9. method as claimed in claim 8, the step that wherein forms described microlens array comprises:
On described substrate, form planarization layer;
Form first photosensitive film of patterning on described planarization layer, first photosensitive film of described patterning is the backgammon plate-like and arranges;
Heat-treat by first photosensitive film, on described planarization layer, form and sacrifice lenticule described patterning;
By using the described planarization layer of described sacrifice lenticule etching to form described first group of lenticule;
Form second photosensitive film of patterning in the space between described first group of lenticular contiguous microlens; With
Heat-treat by second photosensitive film, form described second group of lenticule described patterning.
10. method as claimed in claim 9, wherein said planarization layer comprise and can come etched water wetted material by dry etching.
11. method as claimed in claim 10, wherein said planarization layer comprises low temperature oxide.
12. method as claimed in claim 9, wherein said first and second photosensitive films comprise hydrophobic material.
13. method as claimed in claim 8 is further comprising the steps of:
On described substrate, form planarization layer; With
The described planarization layer of patterning is arranged on groove in the draughtboard pattern with formation,
The step that wherein forms described microlens array comprises:
In the described groove of described planarization layer, form described first group of lenticule, and on the top surface of described planarization layer, form described second group of lenticule.
14. method as claimed in claim 13, wherein said planarization layer comprises water wetted material, and described first and second groups of lenticules comprise hydrophobic material.
15. method as claimed in claim 13 wherein forms described first group of lenticule and described second group of lenticular step comprises:
Deposition and patterning first photosensitive film on the described groove of described planarization layer;
Deposition and patterning second photosensitive film on the top surface of described planarization layer; With
Photosensitive film to first and second patternings carries out reflux technique.
16. method as claimed in claim 8 is further comprising the steps of:
On described substrate, form the water wetted material layer; With
Form the hydrophobic material layer of patterning on described water wetted material layer, the hydrophobic material layer of this patterning is the backgammon plate-like and arranges;
The step that wherein forms described microlens array comprises:
On the described water wetted material layer that exposes, form described first group of lenticule; With
On the hydrophobic material layer of described patterning, form described second group of lenticule.
17. method as claimed in claim 16, wherein said first group of lenticule and described second group of lenticule all comprise hydrophobic material.
18. method as claimed in claim 16 wherein forms described first group of lenticule and comprises with the described second group of lenticular step of formation:
Deposition and patterning first photosensitive film on the described water wetted material layer that exposes;
Deposition and patterning second photosensitive film on the hydrophobic material layer of described patterning; With
Photosensitive film to first and second patternings carries out reflux technique.
19. method as claimed in claim 18, the hydrophobic material layer of wherein said patterning have than the narrower width of described water wetted material layer that exposes.
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2006-0135715 | 2006-12-27 | ||
| KR1020060135715 | 2006-12-27 | ||
| KR10-2006-0135716 | 2006-12-27 | ||
| KR1020060135715A KR100835525B1 (en) | 2006-12-27 | 2006-12-27 | Image sensor and fabricating method thereof |
| KR1020060135716A KR100812087B1 (en) | 2006-12-27 | 2006-12-27 | Image sensor and fabricating method thereof |
| KR1020060135716 | 2006-12-27 |
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| CN101211936A true CN101211936A (en) | 2008-07-02 |
| CN101211936B CN101211936B (en) | 2011-01-26 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109348127A (en) * | 2018-11-12 | 2019-02-15 | 德淮半导体有限公司 | Manufacturing method, imaging sensor and the imaging device of imaging sensor |
| CN111169056A (en) * | 2018-11-12 | 2020-05-19 | 苏州维业达触控科技有限公司 | Method for manufacturing anti-dazzle diffusion film |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100436061B1 (en) * | 2001-06-28 | 2004-06-12 | 주식회사 하이닉스반도체 | Method for fabricating Microlense |
-
2006
- 2006-12-27 KR KR1020060135716A patent/KR100812087B1/en not_active IP Right Cessation
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2007
- 2007-09-25 CN CN2007101612325A patent/CN101211936B/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109348127A (en) * | 2018-11-12 | 2019-02-15 | 德淮半导体有限公司 | Manufacturing method, imaging sensor and the imaging device of imaging sensor |
| CN111169056A (en) * | 2018-11-12 | 2020-05-19 | 苏州维业达触控科技有限公司 | Method for manufacturing anti-dazzle diffusion film |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101211936B (en) | 2011-01-26 |
| KR100812087B1 (en) | 2008-03-07 |
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