CN101207005A - Method for interfering and calibrating light detection device - Google Patents
Method for interfering and calibrating light detection device Download PDFInfo
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- CN101207005A CN101207005A CNA2006101695677A CN200610169567A CN101207005A CN 101207005 A CN101207005 A CN 101207005A CN A2006101695677 A CNA2006101695677 A CN A2006101695677A CN 200610169567 A CN200610169567 A CN 200610169567A CN 101207005 A CN101207005 A CN 101207005A
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- checkout gear
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Abstract
The invention discloses an interference optical detection device and a method of calibrating the device. The invention is installed in a screen box of an upper electrode in an etching cavity, an adjustment knob is arranged on the exterior of the screen box, and an adjustment screw can be adjusted through the adjustment knob, thereby calibrating a probe head. When the probe head is adjusted every time, the screen box of the upper electrode is not required to be opened, the levelness of a probe head supporting frame can be adjusted through the adjustment knob on the exterior of the screen box of the upper electrode. Therefore, the calibration can be still realized in the plasmastate , namely, under the condition of impressing the voltage of the upper electrode and, to ensure the calibration to be convenient, effective, and accurate.
Description
Technical field
The present invention relates to a kind of checkout gear and calibration steps thereof, the method that relates in particular to a kind of interference light checkout gear and calibrate this device.
Background technology
In the semi-conductor silicon chip process technology,, the method for two kinds of end point determination is arranged at present for the etching technics of 90nm size lines.A kind of method is to measure the thickness that silicon chip is etched away in real time by online interferometry spectrometer (Interferometer), calculate the thickness of residue silicon chip, thereby the time that control technology is carried out, this kind method is IEP (InterferometricEndpoint: the interference light end-point detection method).Another method is OES (Optical EmissionSpectroscopy, an optical emitting spectral measurement method), utilizes the variation of characterization processes process ionic medium body intensity of emission spectra, carries out end point determination.Usually in 90nm and the etching technics below the 90nm, these two kinds of methods can be used simultaneously.
Use the method for IEP, a light source need be installed directly over the technology etching cavity, and the light vertical irradiation that makes emission is to silicon chip, light reflects at silicon chip, the reverberation of different layers is interfered again, when varied in thickness, be formed at and relate to striped, from the interference fringe that obtains, calculate the variation of etching film thickness.This moment is from the light of light source incident and all will be through the optical fiber of chamber top through the light of silicon chip reflection, so the light of this optical fiber emission must be perpendicular to silicon chip, otherwise just can't successfully receive reverberation, or the luminous intensity deficiency that receives.Therefore, make when carrying out end point determination in this way, it is extremely important that the probe that transmits and receives light is carried out vertical calibration.
As shown in Figure 1, the probe 4 of IEP interference light checkout gear is installed in the top of etching cavity 1 by bracing frame 5, place in the shielding box 3 of top electrode 7, the method of calibration probe 4 is exactly after probe 4 is installed, put into etching cavity 1 a slice silicon chip 2, calibrate under the situation of plasma not having.When illumination is mapped on the silicon chip 2, because the surface of silicon chip 2 is more smooth, most of light is reflected, the inclination of the 6 pairs of probes 4 of adjustment screw by adjusting bracing frame 5 bottoms is adjusted under these circumstances, when the light intensity that receives reached the strongest, the position that shows probe 4 at this moment was perpendicular to silicon chip surface.
The each calibration of this method all must be opened shielding box 3, therefore be to carry out under the condition of plasma not having, but after top electrode 7 has added radio-frequency power, because temperature raises, certain locational vibration and drift can take place in probe 4, the position that causes actual probe 4 with deviation in driction original vertical state, original like this align mode is not to obtain the strongest state of light intensity just.
Summary of the invention
The method that the purpose of this invention is to provide a kind of interference light checkout gear that can make things convenient for, calibrate accurately and calibrate this device.
The objective of the invention is to be achieved through the following technical solutions:
Interference light checkout gear of the present invention, be installed in the shielding box of top electrode of etching cavity, comprise the probe that is installed on the bracing frame, bracing frame is provided with the adjustment screw, be used for probe is calibrated, also comprise the adjustment knob, described adjustment knob is located at the outside of described shielding box, and be connected with described adjustment screw, can adjust adjusting screw.
Also comprise transmission device, described adjustment knob is connected with the adjustment screw by transmission device.
Described transmission device is a gear drive.
Described adjustment screw has 3, and corresponding described adjustment knob has 3.
The method of calibration above-mentioned interference optical detection device of the present invention comprises step:
A, in reaction chamber, place a slice silicon chip;
B, by probe to silicon chip emission light beam, and receive the folded light beam of silicon chip;
C, by the angle of adjusting knob, adjusting screw, bracing frame is adjusted probe, when the reflected light beam intensities that receives when probe reaches maximum, be the position after the probe calibration.
In the described steps A, in reaction chamber, place silicon chip and also comprise afterwards,
In reaction chamber, feed an amount of process gas, and in top electrode, add the radio-frequency voltage that needs.
Described silicon chip is an oxidized silicon chip.
Described process gas is an inert gas.
Described process gas is a nitrogen.
As seen from the above technical solution provided by the invention, interference light checkout gear of the present invention and the method for calibrating this device, owing to adjust the outside that knob is located at described shielding box, and be connected with described adjustment screw, can adjust adjusting screw by adjusting knob, and then probe is calibrated.The each adjustment when popping one's head in will do not opened by the top electrode shielding box, adjusts knob and can the levelness in the face of the probe support frame adjust outside the top electrode shielding box.Therefore, can be implemented in plasmoid, promptly be applied with under the state of electrode voltage and still can calibrate, make calibration convenient and effectively, accurately.
Description of drawings
Fig. 1 is an interference light checkout gear align mode schematic diagram of the prior art;
Fig. 2 is the structure chart of interference light checkout gear of the present invention.
Embodiment
Interference light checkout gear of the present invention as shown in Figure 1, is installed in the shielding box 3 of top electrode 7 of etching cavity 1, comprises the probe 4 that is installed on the bracing frame 5, and bracing frame 5 is provided with adjusts screw 6, is used for 4 calibrating popping one's head in.Probe 4 is connected with external fiber, is used in etching cavity 1, launching light beam, and the light beam that returns of reception.
Its preferable embodiment also comprises and adjusts knob 10 that described adjustment knob 10 is located at the outside of shielding box 3, and is connected with described adjustment screw 6 as shown in Figure 2, can adjust adjusting screw 6.Like this, the each adjustment when popping one's head in will do not opened by the top electrode shielding box, adjusts knob and can the levelness in the face of the probe support frame adjust outside the top electrode shielding box.Therefore, can be implemented in plasmoid, promptly be applied with under the state of electrode voltage and still can calibrate.
Can and adjust between the screw 6 at adjustment knob 10 transmission device 11 is set, described transmission device 11 can be gear drive, also can be other transmission device.It adjusts principle is to carry out the adjustment of horizontal direction by the adjustment knob that is rotated in top electrode shielding box outside, the horizontal motion that to adjust knob by gear drive is converted into the movement in vertical direction of adjusting screw, thereby adjustment by vertical direction, levelness to the probe support frame is adjusted, thereby probe can be calibrated.
Described adjustment screw 6 preferably has 3, and corresponding described adjustment knob 10 has 3.
The method of calibration above-mentioned interference optical detection device of the present invention, preferred implementation is to comprise
Step 3, by the angle of adjusting knob 10, adjusting screw 6, bracing frame 5 is adjusted probe 4, when the reflected light beam intensities that receive when probe 4 reach maximum, be the position after probe 4 calibrations.
In the described step 1, in reaction chamber 1, place silicon chip 1 and also comprise afterwards,
In reaction chamber 1, feed an amount of process gas, and in top electrode 7, add the radio-frequency voltage that needs.Described silicon chip 2 is preferably oxidized silicon chip, because oxidized silicon chip is more stable, generally can not react, using such silicon chip purpose is to avoid in the plasma glow start process, silicon chip surface has been carried out etching and the silicon chip surface that causes is rough, thereby light is carried out scattering, cause calibration result inaccurate, also can be with other more stable silicon chips.
Described process gas is an inert gas, is preferably nitrogen, and its purpose also is to be etched for fear of silicon chip surface.
The present invention can avoid calibrating under the situation that no plasma takes place, and actual the existence under the plasma situation, because the thermal vibration of parts causes the probe positions skew, thereby the receiving light power that causes not is maximum situation.Use as above device and calibration steps can be increased in light intensity in the technical process.And owing to adjust all is outside the shielding box of top electrode, has avoided each calibration all will turn-off upper electrode power.Make calibration convenient and effective, accurate.
The above; only for the preferable embodiment of the present invention, but protection scope of the present invention is not limited thereto, and anyly is familiar with those skilled in the art in the technical scope that the present invention discloses; the variation that can expect easily or replacement all should be encompassed within protection scope of the present invention.
Claims (9)
1. interference light checkout gear, be installed in the shielding box of top electrode of etching cavity, comprise the probe that is installed on the bracing frame, bracing frame is provided with the adjustment screw, is used for probe is calibrated, and it is characterized in that, also comprise the adjustment knob, described adjustment knob is located at the outside of described shielding box, and is connected with described adjustment screw, can adjust adjusting screw.
2. interference light checkout gear according to claim 1 is characterized in that, also comprises transmission device, and described adjustment knob is connected with the adjustment screw by transmission device.
3. interference light checkout gear according to claim 2 is characterized in that, described transmission device is a gear drive.
4. according to claim 1,2 or 3 described interference light checkout gears, it is characterized in that described adjustment screw has 3, corresponding described adjustment knob has 3.
5. a method of calibrating the above-mentioned interference optical detection device is characterized in that, comprises step:
A, in reaction chamber, place a slice silicon chip;
B, by probe to silicon chip emission light beam, and receive the folded light beam of silicon chip;
C, by the angle of adjusting knob, adjusting screw, bracing frame is adjusted probe, when the reflected light beam intensities that receives when probe reaches maximum, be the position after the probe calibration.
6. the method for calibration interference light checkout gear according to claim 5 is characterized in that, in the described steps A, in reaction chamber, places silicon chip and also comprises afterwards,
In reaction chamber, feed an amount of process gas, and in top electrode, add the radio-frequency voltage that needs.
7. the method for calibration interference light checkout gear according to claim 6 is characterized in that, described silicon chip is an oxidized silicon chip.
8. the method for calibration interference light checkout gear according to claim 6 is characterized in that, described process gas is an inert gas.
9. the method for calibration interference light checkout gear according to claim 8 is characterized in that, described process gas is a nitrogen.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200610169567A CN100587905C (en) | 2006-12-22 | 2006-12-22 | Interference light detection device and method for calibrating same |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200610169567A CN100587905C (en) | 2006-12-22 | 2006-12-22 | Interference light detection device and method for calibrating same |
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| Publication Number | Publication Date |
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| CN101207005A true CN101207005A (en) | 2008-06-25 |
| CN100587905C CN100587905C (en) | 2010-02-03 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN200610169567A Active CN100587905C (en) | 2006-12-22 | 2006-12-22 | Interference light detection device and method for calibrating same |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107093566A (en) * | 2017-04-28 | 2017-08-25 | 苏州商信宝信息科技有限公司 | A kind of silicon chip automatic detection sorting device and its control method |
| CN109596070A (en) * | 2018-12-20 | 2019-04-09 | 西安交通大学 | A kind of the optical parallel calibrating installation and method of universal face formula non-contact sensor |
-
2006
- 2006-12-22 CN CN200610169567A patent/CN100587905C/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107093566A (en) * | 2017-04-28 | 2017-08-25 | 苏州商信宝信息科技有限公司 | A kind of silicon chip automatic detection sorting device and its control method |
| CN107093566B (en) * | 2017-04-28 | 2019-11-22 | 连江县维佳工业设计有限公司 | A kind of silicon wafer automatic detection sorting device and its control method |
| CN109596070A (en) * | 2018-12-20 | 2019-04-09 | 西安交通大学 | A kind of the optical parallel calibrating installation and method of universal face formula non-contact sensor |
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| Publication number | Publication date |
|---|---|
| CN100587905C (en) | 2010-02-03 |
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Address after: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100016, building 2, block M5, No. 1 East Jiuxianqiao Road, Beijing, Chaoyang District Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |
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