CN101195910A - Method for detecting exception condition of tungsten chemical vapor deposition equipment - Google Patents
Method for detecting exception condition of tungsten chemical vapor deposition equipment Download PDFInfo
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- CN101195910A CN101195910A CNA2006101190545A CN200610119054A CN101195910A CN 101195910 A CN101195910 A CN 101195910A CN A2006101190545 A CNA2006101190545 A CN A2006101190545A CN 200610119054 A CN200610119054 A CN 200610119054A CN 101195910 A CN101195910 A CN 101195910A
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Abstract
The invention discloses a method for detecting the abnormal condition of wolfram chemical vapor deposition equipment, which relates to the impulse nucleation layer technology of the wolfram chemical vapor deposition. The invention comprises the following steps: a wafer for wolfram membrane deposition is positioned under a scanning tool, the initial subparticle quantity is obtained, the silane and tungsten hexafluoride gas is filled into the wolfram chemical vapor deposition equipment to perform the reducing reaction, the wolfram membrane is formed on the surface of the wafer, the wafer with wolfram membrane formed on the surface is positioned under the scanning tool, and the signal noise ratio and the scanning precision are set for the scanning tool to scan the surface of the wafer after wolfram membrane deposition; the wafer with added subparticle quantity of the wolfram membrane surface scanned compared with the initial subparticle quantity is put under a microscope to observe, and to judge whether the subparticle is vaporized into the nucleation wolfram subparticle to ensure whether the wolfram chemical vapor deposition equipment has abnormal condition. Through the method of the invention, whether the abnormal condition of the wolfram chemical vapor deposition equipment has occurred can be accurately judged, and the persistence of the technology is not affected.
Description
Technical field
The present invention relates to the pulse nucleating layer technology of tungsten chemical vapor deposition (WCVD), particularly the detection method of the gas-phase nucleation abnormal conditions in the pulse nucleating layer technology.
Background technology
Tungsten is often used as the interconnecting metal of highly conc, the through hole of metal interlevel (Via) and contact hole (Contact) that vertically contacts and the sealing coat between aluminium and silicon in integrated electronics.
The semi-conductor world (
Www.sichinamag.com), the article on February 13rd, 2006: the application of WCVD in unicircuit, the author: healthy, the general technology step of tungsten chemical vapor deposition is disclosed.In the pulse nucleation tungsten growth technique of tungsten chemical vapor deposition, Novellus Altus tungsten chemical vapor deposition equipment is with the reduction reaction of silane and the tungsten hexafluoride W film crystal nucleation layer of growing on wafer.In this processing step, need control to finish technology to the silane gas of tungsten chemical vapor deposition equipment feeding and the flow of tungsten hexafluoride.Under the normal circumstances, the flow of the silane gas that feeds should be not more than the flow of the tungsten hexafluoride of feeding, but because the feeding gas function unit of tungsten chemical vapor deposition equipment may occur unusually, cause the interior silane gas of reaction chamber and the flow proportional of tungsten hexafluoride to change, promptly the flow of silane gas is greater than the flow of tungsten hexafluoride.This abnormal conditions can cause producing tungsten gas-phase nucleation fine particle when the W film nucleating layer.
In order to detect this situation, whether the technician attempts occurring unusually by the reflectivity of the wafer of measuring the W film nucleation or the feeding gas function unit that thickness detects tungsten chemical vapor deposition equipment, but these detection methods are not gathered effect.Through further observing, the technician finds after abnormal conditions occur, and has in the inside cavity of tungsten chemical vapor deposition equipment to cause because of gas-phase nucleation producing a large amount of gas-phase nucleation tungsten subparticles between the production well of reaction cavity and base station.So then want to determine by detecting the tungsten subparticle whether the feeding gas function unit of tungsten chemical vapor deposition equipment occurs unusually.But method now can only be held torch detection tungsten chemical vapor deposition equipment inside cavity by the monitoring personnel and observe the subparticle of finding that tungsten forms.And visual inspection is incomplete same to the subjective judgement of tungsten subparticle owing to everyone, so tolerance range is relatively poor.And this kind method must stop tungsten chemical vapor deposition equipment, just can carry out, and therefore influenced the technology persistence.
Summary of the invention
The problem that the present invention solves provides a kind of detection method and finds that unusual situation appears in the feeding gas function unit of tungsten chemical vapor deposition equipment.
For addressing the above problem, whether the present invention has the tungsten subparticle to determine whether the feeding gas function unit of tungsten chemical vapor deposition equipment occurs unusually by detecting on the wafer that generates W film.Detection method may further comprise the steps:
To set the wafer before signal to noise ratio and scanning accuracy scan silane and tungsten hexafluoride reduction reaction, obtain initial subparticle number;
Feeding silane and tungsten hexafluoride carry out reduction reaction in tungsten chemical vapor deposition equipment, generate W film at crystal column surface;
The wafer that generates W film with same signal to noise ratio and scanning accuracy scanning of a surface obtains reacting back subparticle number;
Judge that reacting back subparticle number compares whether the subparticle of the crystal column surface of initial subparticle number increase is gas-phase nucleation tungsten subparticle;
If the subparticle that scans is not a gas-phase nucleation tungsten subparticle, then the feeding gas function unit of tungsten chemical vapor deposition equipment does not occur unusually;
If the subparticle that scans is a gas-phase nucleation tungsten subparticle, then the feeding gas function unit of tungsten chemical vapor deposition equipment occurs unusual.
Compared with prior art, the present invention has the following advantages:
1. to detect the method for exception condition of tungsten chemical vapor deposition equipment be to detect rather than itself detect for tungsten chemical vapor deposition equipment for wafer in the present invention, do not need to stop tungsten chemical vapor deposition equipment, therefore do not influence the persistence of technology.
2. the present invention's method of detecting exception condition of tungsten chemical vapor deposition equipment is found subparticle by scanning tools, and the subparticle that scans gained by microscopic examination is confirmed with the comparison of gas-phase nucleation tungsten subparticle, therefore so the factor of having got rid of subjective judgement is the tolerance range height.
Description of drawings
Fig. 1 is that gas-phase nucleation generates less tungsten subparticle figure;
Fig. 2 is that the present invention detects the less subparticle figure that scans in the method for exception condition of tungsten chemical vapor deposition equipment;
Fig. 3 is that gas-phase nucleation generates more tungsten subparticle figure;
Fig. 4 is that the present invention detects the more subparticle figure that scans in the method for exception condition of tungsten chemical vapor deposition equipment;
Fig. 5 is the method flow diagram that the present invention detects exception condition of tungsten chemical vapor deposition equipment.
Embodiment
Whether the present invention has the tungsten subparticle to determine whether the feeding gas function unit of tungsten chemical vapor deposition equipment occurs may further comprise the steps unusually by detecting on the wafer that generates W film:
To set the wafer before signal to noise ratio and scanning accuracy scan silane and tungsten hexafluoride reduction reaction, obtain initial subparticle number;
Feeding silane and tungsten hexafluoride carry out reduction reaction in tungsten chemical vapor deposition equipment, generate W film at crystal column surface;
The wafer that generates W film with same signal to noise ratio and scanning accuracy scanning of a surface obtains reacting back subparticle number;
Judge that reacting back subparticle number compares whether the subparticle of the crystal column surface of initial subparticle number increase is gas-phase nucleation tungsten subparticle;
If the subparticle that scans is not a gas-phase nucleation tungsten subparticle, then the feeding gas function unit of tungsten chemical vapor deposition equipment does not occur unusually;
If the subparticle that scans is a gas-phase nucleation tungsten subparticle, then the feeding gas function unit of tungsten chemical vapor deposition equipment occurs unusual.
The reduction reaction of described silane and tungsten hexafluoride operation 6 times, being consistent with actual process, and it is more to make that the subparticle number that the W film surface generates when unusual appears in the gas function unit, more can be scanned tool scans and arrive.
The instrument of described scanning is SP1.
Described signal to noise ratio is the intensity of gas-phase nucleation tungsten subparticle reflection ray and the intensity contrast of non-gas-phase nucleation tungsten subparticle reflection ray.
Describedly judge that whether subparticle is that gas-phase nucleation tungsten subparticle is with the subparticle and the contrast of gas-phase nucleation tungsten subparticle that scan by microscope.
How describe the method that the present invention detects exception condition of tungsten chemical vapor deposition equipment in detail below by a concrete example conceives:
At first get six identical wafers, use scanning tools SP1, set the signal to noise ratio of 6: 1,5: 1 and 4: 1 and scanning accuracy that precision is 0.17um the W film surface of wafer is scanned respectively for first to the 3rd wafer; Respectively for the 4th to the 6th wafer, set the signal to noise ratio of 6: 1,5: 1 and 4: 1 and scanning accuracy that precision is 0.17um the W film surface of wafer is scanned; Obtain the preceding six wafer W films surface subparticle number of silane and tungsten hexafluoride reduction reaction;
Then, owing to be directly proportional with roughness by the thickness of discovering W film, be that thickness is big more, roughness is big more, and roughness is disadvantageous for the tungsten subparticle that detects the W film surface greatly, therefore decision adopts the wafer that generates thin W film thickness to detect, so to six wafer respectively growth thickness be about the W film of 100 dusts, for first to the 3rd wafer, in tungsten chemical vapor deposition equipment, feed silane and tungsten hexafluoride, carry out reduction reaction, wherein the flow of silane gas is not more than the flow of tungsten hexafluoride; To the 4th to the 6th wafer, in tungsten chemical vapor deposition equipment, feed silane and tungsten hexafluoride, carry out reduction reaction, wherein the silane gas flow of Tong Ruing is greater than the tungsten hexafluoride flow;
Next, to place under the scanning tools through six wafer of silane and tungsten hexafluoride reduction reaction generation W film, respectively for first to the 3rd wafer, set the signal to noise ratio of 6: 1,5: 1 and 4: 1 and scanning accuracy that precision is 0.17um the W film surface of wafer is scanned; Respectively for the 4th to the 6th wafer, set the signal to noise ratio of 6: 1,5: 1 and 4: 1 and scanning accuracy that precision is 0.17um the W film surface of wafer is scanned; Obtain the wafer W film surface subparticle number after silane reduces;
Scanning result such as following table:
Can see that from table the subparticle number that the silane flow rate that the subparticle number on W film surface that carries out the 4th to the 6th wafer of reduction reaction in the silane flow rate that feeds under greater than the situation of tungsten hexafluoride flow is compared feeding is not more than the W film surface of first to the 3rd wafer of carrying out reduction reaction under the situation of tungsten hexafluoride flow has increased greatly.
At last, the the 4th to the 6th wafer is put into microscopically observes, the subparticle that to see and gas-phase nucleation tungsten subparticle are compared and are judged whether the subparticle that scans is gas-phase nucleation tungsten subparticle, find through comparison, be under 6: 1 the situation in signal to noise ratio, the subparticle that scanning tools scans is gas-phase nucleation tungsten subparticle, the contrast photo as shown in Figure 1 and Figure 2, and be that the subparticle that scanning tools scans is not gas-phase nucleation tungsten subparticle entirely under the situation of 5: 1 and 4: 1 in signal to noise ratio.
Can infer thus, scanning tools is set signal to noise ratio 6: 1, and scanning accuracy is that 0.17um can detect the best setting that produce the situation of tungsten subparticle on the W film surface of wafer because the feeding gas function unit of tungsten chemical vapor deposition equipment occurs unusual.
For further whether the above-mentioned deduction of checking is correct, done the test of a checking property again:
At first, again get four wafer, use scanning tools SP1, the scanning accuracy that 6: 1 signal to noise ratio of unified setting and precision are 0.17um scans the W film surface of four wafer, obtains the preceding wafer W film surface subparticle number of silane and tungsten hexafluoride reduction reaction;
Then, to first, second wafer, feed silane and tungsten hexafluoride in tungsten chemical vapor deposition equipment, carry out reduction reaction and generate the thick W film of 100 dusts, wherein silane flow rate is not more than the tungsten hexafluoride flow; To the 3rd, the 4th wafer, in tungsten chemical vapor deposition equipment, feed silane and tungsten hexafluoride, carry out reduction reaction and generate the thick W film of 100 dusts, wherein silane flow rate is greater than the tungsten hexafluoride flow;
Next, to place under the scanning tools through the wafer of silane and tungsten hexafluoride reduction reaction generation W film, for four wafer, unified set the scanning accuracy that 6: 1 signal to noise ratio and precision be 0.17um the W film surface of wafer is scanned, obtain the wafer W film surface subparticle number after the reduction reaction;
Scanning result such as following table:
Can see that from table the subparticle number that the silane flow rate that the subparticle number on W film surface that carries out the 3rd, the 4th wafer of reduction reaction in the silane flow rate that feeds under greater than the situation of tungsten hexafluoride flow is compared feeding is not more than the W film surface of first, second wafer of carrying out reduction reaction under the situation of tungsten hexafluoride flow has increased greatly.
At last, the the 3rd, the 4th wafer is put into microscopically observes, the subparticle that to see and gas-phase nucleation tungsten subparticle are compared and are judged whether the subparticle that scans is gas-phase nucleation tungsten subparticle, find that through comparison the subparticle that scanning tools scans on the 3rd, the 4th wafer is gas-phase nucleation tungsten subparticle to Fig. 3, Fig. 4.
In sum, we can draw such conclusion, the step that the present invention detects the method for exception condition of tungsten chemical vapor deposition equipment does not influence the carrying out of silane and tungsten hexafluoride reduction reaction technology, because the object that detects is exactly the wafer through reduction reaction, and the method that the present invention detects exception condition of tungsten chemical vapor deposition equipment can reflect accurately that really unusual situation appears in the feeding gas function unit of tungsten chemical vapor deposition equipment, promptly causes the situation of the flow of the silane gas in the reaction chamber greater than the flow of tungsten hexafluoride.
Claims (8)
1. a method that detects exception condition of tungsten chemical vapor deposition equipment is characterized in that, comprise the following steps,
To set the wafer before signal to noise ratio and scanning accuracy scan silane and tungsten hexafluoride reduction reaction, obtain initial subparticle number;
Feeding silane and tungsten hexafluoride carry out reduction reaction in tungsten chemical vapor deposition equipment, generate W film at crystal column surface;
The wafer that generates W film with same signal to noise ratio and scanning accuracy scanning of a surface obtains reacting back subparticle number;
Judge that reacting back subparticle number compares whether the subparticle of the crystal column surface of initial subparticle number increase is gas-phase nucleation tungsten subparticle;
If the subparticle that scans is not a gas-phase nucleation tungsten subparticle, then the feeding gas function unit of tungsten chemical vapor deposition equipment does not occur unusually;
If the subparticle that scans is a gas-phase nucleation tungsten subparticle, then the feeding gas function unit of tungsten chemical vapor deposition equipment occurs unusual.
2. the method for detection exception condition of tungsten chemical vapor deposition equipment as claimed in claim 1 is characterized in that, the W film thickness of described generation is 100 dusts.
3. the method for detection exception condition of tungsten chemical vapor deposition equipment as claimed in claim 1 is characterized in that, the reduction reaction operation of described silane and tungsten hexafluoride 6 times.
4. the method for detection exception condition of tungsten chemical vapor deposition equipment as claimed in claim 1 is characterized in that, the instrument of described scanning is SP1.
5. the method for detection exception condition of tungsten chemical vapor deposition equipment as claimed in claim 1 is characterized in that, described signal to noise ratio is the intensity of gas-phase nucleation tungsten subparticle reflection ray and the intensity contrast of non-gas-phase nucleation tungsten subparticle reflection ray.
6. the method for detection exception condition of tungsten chemical vapor deposition equipment as claimed in claim 1, it is characterized in that, describedly judge that whether subparticle is that gas-phase nucleation tungsten subparticle is with the subparticle and the contrast of gas-phase nucleation tungsten subparticle that scan by microscope.
7. the method for detection exception condition of tungsten chemical vapor deposition equipment as claimed in claim 1 is characterized in that, described signal to noise ratio is 6: 1.
8. the method for detection exception condition of tungsten chemical vapor deposition equipment as claimed in claim 1 is characterized in that, described scanning accuracy is 0.17um.
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2006101190545A CN100516292C (en) | 2006-12-04 | 2006-12-04 | Method for detecting exception condition of tungsten chemical vapor deposition equipment |
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| CNB2006101190545A CN100516292C (en) | 2006-12-04 | 2006-12-04 | Method for detecting exception condition of tungsten chemical vapor deposition equipment |
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| CN100516292C CN100516292C (en) | 2009-07-22 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101995853B (en) * | 2009-08-20 | 2012-08-22 | 中芯国际集成电路制造(上海)有限公司 | Automatic control method and system for particles |
| CN109904087A (en) * | 2019-01-14 | 2019-06-18 | 全球能源互联网研究院有限公司 | A kind of detection method and device of semiconductor wafer surface granularity |
-
2006
- 2006-12-04 CN CNB2006101190545A patent/CN100516292C/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101995853B (en) * | 2009-08-20 | 2012-08-22 | 中芯国际集成电路制造(上海)有限公司 | Automatic control method and system for particles |
| CN109904087A (en) * | 2019-01-14 | 2019-06-18 | 全球能源互联网研究院有限公司 | A kind of detection method and device of semiconductor wafer surface granularity |
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| Publication number | Publication date |
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| CN100516292C (en) | 2009-07-22 |
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Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING |
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Effective date of registration: 20111108 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Co-patentee after: Semiconductor Manufacturing International (Beijing) Corporation Patentee after: Semiconductor Manufacturing International (Shanghai) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation |