CN101192553A - Method for measuring silicon oxide layer-silicon nitride-silicon oxide layer electrical thickness - Google Patents
Method for measuring silicon oxide layer-silicon nitride-silicon oxide layer electrical thickness Download PDFInfo
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- CN101192553A CN101192553A CNA2006101188102A CN200610118810A CN101192553A CN 101192553 A CN101192553 A CN 101192553A CN A2006101188102 A CNA2006101188102 A CN A2006101188102A CN 200610118810 A CN200610118810 A CN 200610118810A CN 101192553 A CN101192553 A CN 101192553A
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- oxide layer
- silicon oxide
- silicon
- silicon nitride
- electrical thickness
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Abstract
The invention relates to a method for measuring a thickness of a silica-azotized silicon-silica membrane and comprises the following steps: electrostatic charges are sprinkled on a silicon substrate; a voltage of the electrostatic charges on the silicon is measured; and an electric potential is conversed into an electricity thickness of the silica-azotized silicon-silica membrane. Through the steps, a carrier activity measurement instrument SDI is used for measuring the electricity thickness of the silica-azotized silicon-silica membrane directly, thus simplifying the measurement steps and obtaining a stable measurement result; furthermore, accurate control for manufacturing technology is realized and the design requirements of products are finally met.
Description
Technical field
The present invention relates to the measurement of semiconductor device, relate in particular to the method for measuring silicon oxide layer-silicon nitride-silicon oxide layer (hereinafter to be referred as ONO) electrical thickness.
Background technology
In the measurement of many nano thin-films, the ellipsometer test measuring technique is a kind of novel film thickness detection technique.Parallel, the quasi monochromatic polarised light light wave oblique incidence of a branch of expansion is to sample surfaces; Thereby sample is modulated the information that has contained sample in the reflecting light that makes to the polarization state of incident light wave; Reflecting light is gone into lens and is carried out imaging through the analyzing device is laggard.Polarizer can obtain distribution information such as the surface thickness of sample or superficial density from the image under suitable setting, this technology can reach the resolution of time nanometer scale in the vertical, laterally reaches the resolution of micron dimension.
Be coated with in the process at the ONO of integrated circuit memory element, adopt ellipsometer test to measure the optical thickness of ONO usually, and then draw the electrical thickness of ONO.Shown in Figure 1A, on silicon chip 100, form first silicon oxide layer 102 with chemical vapour deposition technique; The laser of being launched by the light source 105 of ellipsometer test becomes linearly polarized light 107 through the polarizer 106 then; Linearly polarized light 107 is through quarter wave plate 108, because birefringent phenomenon makes it resolve into mutually perpendicular P ripple and S ripple, becomes elliptically polarized light 109; Elliptically polarized light 109 is with angle
Be incident to first silicon oxide layer 102, shown in Figure 1A ', be incident to the directly reflection on first surface 112 of a part of light in the elliptically polarized light 109 of first surface 112 of first silicon oxide layer 102, another part light is then with angle of transmission
2 transmissions enter in first silicon oxide layer 102; A part of light that transmission enters in first silicon oxide layer 102 reflects first silicon oxide layer 102 via first surface 112, and another part light is with angle of transmission
3 second surfaces 114 that transmit first silicon oxide layer 102 enter in the silicon chip 100; Through behind the reflection and transmission repeatedly, the light that finally reflects first silicon oxide layer, 102 first surfaces 113 is linearly polarized light 110; Enter receiving tube 112 through behind the analyzer 111, change by polarised light before the Computer Analysis incident and reflection rear polarizer polarized state of light then, measure elliptic parameter ψ and Δ; According to formula:
Calculate the geometric thickness d and the refractive index n of first silicon oxide layer 102
2(n wherein
1Be refractive index, the n of air on the first surface 112 of first silicon oxide layer 102
3Be the refractive index of the silicon chip 100 that joins of the second surface 114 of first silicon oxide layer 102); Then, calculate the optical thickness of first silicon oxide layer 102 according to formula optical thickness=refractive index * geometric thickness.
Shown in Figure 1B, on first silicon oxide layer 102, form silicon nitride layer 103 with chemical vapour deposition technique; The laser of being launched by the light source 105 of ellipse polarimeter becomes linearly polarized light 107 through the polarizer 106 then; Linearly polarized light 107 is through quarter wave plate 108, because birefringent phenomenon makes it resolve into mutually perpendicular P ripple and S ripple, becomes elliptically polarized light 109; Elliptically polarized light 109 is with angle
4Be incident on the silicon nitride layer 103, through behind the reflection and transmission repeatedly, the light that finally reflects silicon nitride layer 103 surfaces is linearly polarized light 110; Enter receiving tube 112 through behind the analyzer 111, change by polarised light before the Computer Analysis incident and reflection rear polarizer polarized state of light then, measure elliptic parameter ψ
1And Δ
1According to above-mentioned formula, calculate the geometric thickness d of silicon nitride layer 103
2And refractive index n
4Then, calculate the optical thickness of silicon nitride layer 103 according to formula optical thickness=refractive index * geometric thickness.
Shown in Fig. 1 C, on silicon nitride layer 103, form second silicon oxide layer 104 with chemical vapour deposition technique; Linearly polarized light 107 is through quarter wave plate 108, because birefringent phenomenon makes it resolve into mutually perpendicular P ripple and S ripple, becomes elliptically polarized light 109; Elliptically polarized light 109 is with angle
4Be incident on the silicon nitride layer 103, through behind the reflection and transmission repeatedly, the light that finally reflects silicon nitride layer 103 surfaces is linearly polarized light 110; Enter receiving tube 112 through behind the analyzer 111, change by polarised light before the Computer Analysis incident and reflection rear polarizer polarized state of light then, measure elliptic parameter ψ
2And Δ
2According to above-mentioned formula, calculate the geometric thickness d of second silicon oxide layer 104
3And refractive index n
5Then, calculate the optical thickness of second silicon oxide layer 104 according to formula optical thickness=refractive index * geometric thickness.
According to optical thickness and electrical thickness relation table, determine the electrical thickness of first silicon oxide layer 102, silicon nitride layer 103 and second silicon oxide layer 104.
Existing method such as the U.S. Pat 200609819 disclosed technical schemes of measuring thicknesses of layers with ellipsometer test.
Prior art is measured the method for ONO electrical thickness, and the optical thickness owing to will measure this rete at formation one deck rete causes operation various, and efficient is low; And just can draw the electrical thickness of ONO later at the optical thickness of having surveyed each layer of ONO, and the complicated and deviation accumulation of step is measured unstablely and cause, and then can cause manufacturing process control inaccurate, and final products do not reach designing requirement.
Summary of the invention
The problem that the present invention solves provides a kind of method of measuring silicon oxide layer-silicon nitride-silicon oxide layer thickness, prevents to cause operation various owing to the optical thickness that will measure this rete at formation one deck rete, and efficient is low; Prevent from just can draw later at the optical thickness of having surveyed each layer of ONO the electrical thickness of ONO simultaneously, the complicated and deviation accumulation of step is measured instability and cause, and then can cause manufacturing process control inaccurate, and final products do not reach designing requirement.
For addressing the above problem, the invention provides a kind of method of measuring silicon oxide layer-silicon nitride-silicon oxide layer electrical thickness, comprise the following steps: on silicon chip, to form successively first silicon oxide layer, silicon nitride layer and second silicon oxide layer; On second silicon oxide layer, spill electrostatic charge; Measure the voltage of the second silicon oxide layer surface electrostatic lotus; Voltage is converted into electrical thickness.
The amount of spilling electrostatic charge is 5E10ea/cm
2To 15E10ea/cm
2
Spill electrostatic charge with the line flowing mode on second silicon oxide layer, described line flowing mode produces electric charge for the ionized air that adds high pressure at the metal wire two ends.
Used measuring instrument is charge carrier activity measurement instrument SDI.
Earlier voltage is scaled electric capacity, and then electric capacity is scaled electrical thickness.Electric capacity equals dielectric constant and multiply by electrostatic charge quantity divided by electrostatic charge voltage, and electrical thickness equals dielectric constant and multiply by the surface area of second silicon oxide layer divided by electric capacity.
Form first silicon oxide layer, silicon nitride layer and second silicon oxide layer with chemical vapour deposition technique.The thickness of described first silicon oxide layer is 60 dust to 80 dusts, and the thickness of silicon nitride layer is 50 dust to 70 dusts, and the thickness of second silicon oxide layer is 40 dust to 60 dusts.
Compared with prior art, the present invention has the following advantages: the electrical thickness of directly measuring silicon oxide layer-silicon nitride-silicon oxide layer with charge carrier activity measurement instrument SDI, measuring process is simplified, and the result who measures is stable, and then realize the manufacturing process precise control, final products can reach designing requirement.
Description of drawings
Figure 1A to Fig. 1 C is that prior art is at the schematic diagram of making silicon oxide layer-silicon nitride-silicon oxide layer process measurement ONO electrical thickness;
Fig. 2 is the flow chart that the present invention measures silicon oxide layer-silicon nitride-silicon oxide layer electrical thickness;
Fig. 3 A to Fig. 3 B is the schematic diagram that the present invention measures silicon oxide layer-silicon nitride-silicon oxide layer electrical thickness;
Fig. 4 is that the present invention measures silicon oxide layer-silicon nitride-silicon oxide layer thickness and silicon oxide layer-silicon nitride-silicon oxide layer ideal thickness value comparison diagram.
Embodiment
Prior art is measured the method for ONO electrical thickness, and the optical thickness owing to will measure this rete at formation one deck rete causes operation various, and efficient is low; And just can draw the electrical thickness of ONO later at the optical thickness of having surveyed each layer of ONO, and the complicated and deviation accumulation of step is measured unstablely and cause, and then can cause manufacturing process control inaccurate, and final products do not reach designing requirement.The present invention directly measures the electrical thickness of silicon oxide layer-silicon nitride-silicon oxide layer with charge carrier activity measurement instrument SDI, and measuring process is simplified, and the result who measures is stable, and then realizes the manufacturing process precise control, and final products can reach designing requirement.For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, the specific embodiment of the present invention is described in detail below in conjunction with accompanying drawing.
Fig. 2 is the flow chart that the present invention detects silica-silicon-nitride and silicon oxide film thickness.As shown in Figure 2, execution in step S201 forms first silicon oxide layer, silicon nitride layer and second silicon oxide layer successively on silicon chip; S202 spills electrostatic charge on second silicon oxide layer; S203 measures the voltage of the second silicon oxide layer surface electrostatic lotus; S204 is converted into electrical thickness with voltage.
Fig. 3 A to Fig. 3 B is the schematic diagram that the present invention measures silicon oxide layer-silicon nitride-silicon oxide layer electrical thickness.As shown in Figure 3A, what form thickness 60 dust to 80 dusts with chemical vapour deposition technique on silicon chip 200 is first silicon oxide layer 202, forming thickness with chemical vapour deposition technique on first silicon oxide layer 202 is the silicon nitride layer 203 of 50 dust to 70 dusts, forms second silicon oxide layer 204 that thickness is 40 dust to 60 dusts with chemical vapour deposition technique on silicon nitride layer 203 again.
Shown in Fig. 3 B, SDI spills electrostatic charge 206 on second silicon oxide layer 204 with charge carrier activity measurement instrument, continues to measure the voltage of second silicon oxide layer, 204 surface electrostatic lotuses with charge carrier activity measurement instrument SDI; With software for calculation measured voltage is scaled electric capacity, then electric capacity is scaled electrical thickness.
In the present embodiment, the concrete thickness of first silicon oxide layer 202 is 60 dusts, 65 dusts, 70 dusts, 75 dusts or 80 dusts for example; The concrete thickness of silicon nitride layer 203 is 50 dusts, 55 dusts, 60 dusts, 65 dusts or 70 dusts for example; The concrete thickness of second silicon oxide layer 204 is 40 dusts, 45 dusts, 50 dusts, 55 dusts or 60 dusts for example.
In the present embodiment, the amount of spilling electrostatic charge is 5E10ea/cm
2To 15E10ea/cm
2, the amount of concrete electrostatic charge is 5E10ea/cm for example
2, 6E10ea/cm
2, 7E10ea/cm
2, 8E10ea/cm
2, 9E10ea/cm
2, 10E10ea/cm
2, 11E10ea/cm
2, 12E10ea/cm
2, 13E10ea/cm
2, 14E10ea/cm
2Or 15E10ea/cm
2
In the present embodiment, electric capacity equals dielectric constant and multiply by electrostatic charge quantity divided by electrostatic charge voltage, and used formula is C=k * Q/V, and wherein C is an electric capacity, and k is a dielectric constant, and Q is an electrostatic charge quantity, and V is an electrostatic charge voltage; Electrical thickness equals surface area that dielectric constant multiply by second silicon oxide layer divided by electric capacity, used formula be d=k * S/C, wherein d is an electrical thickness, k is a dielectric constant, C is an electric capacity, the surface area of S second silicon oxide layer 204.
In the present embodiment, spill electrostatic charge with the line flowing mode on silicon chip, described line flowing mode produces electric charge for the ionized air that adds high pressure at the metal wire two ends.
In the present embodiment, used measuring instrument can also be used KLA Quatax except charge carrier activity measurement instrument SDI.
Fig. 4 is that the present invention measures silicon oxide layer-silicon nitride-silicon oxide layer thickness and silicon oxide layer-silicon nitride-silicon oxide layer electrical thickness ideal value comparison diagram.As shown in Figure 6, THONO be the ONO that on the packaging and testing board, records electrical thickness, SDI is the ONO electrical thickness that measures in being coated with the ONO process, between the two because the method difference of the measurement of adopting, numerical value may be inconsistent, but be linear relevant between the two.
Though the present invention with preferred embodiment openly as above; but it is not to be used for limiting the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; can make possible change and modification, so protection scope of the present invention should be as the criterion with the scope that claim of the present invention was defined.
Claims (10)
1. a method of measuring silicon oxide layer-silicon nitride-silicon oxide layer electrical thickness comprises the following steps:
On silicon chip, form first silicon oxide layer, silicon nitride layer and second silicon oxide layer successively;
On second silicon oxide layer, spill electrostatic charge;
Measure the voltage of the second silicon oxide layer surface electrostatic lotus;
Voltage is converted into electrical thickness.
2. the method for measurement silicon oxide layer-silicon nitride-silicon oxide layer electrical thickness according to claim 1 is characterized in that: the amount of spilling electrostatic charge is 5E10ea/cm
2To 15E10ea/cm
2
3. the method for measurement silicon oxide layer-silicon nitride-silicon oxide layer electrical thickness according to claim 2 is characterized in that: spill electrostatic charge with the line flowing mode on second silicon oxide layer.
4. the method for measurement silicon oxide layer-silicon nitride-silicon oxide layer electrical thickness according to claim 3 is characterized in that: described line flowing mode produces electric charge for the ionized air that adds high pressure at the metal wire two ends.
5. the method for measurement silicon oxide layer-silicon nitride-silicon oxide layer electrical thickness according to claim 3 is characterized in that: used measuring instrument is charge carrier activity measurement instrument SDI.
6. the method for measurement silicon oxide layer-silicon nitride-silicon oxide layer electrical thickness according to claim 1 is characterized in that: earlier voltage is scaled electric capacity, and then electric capacity is scaled electrical thickness.
7. the method for measurement silicon oxide layer-silicon nitride-silicon oxide layer electrical thickness according to claim 6 is characterized in that: electric capacity equals dielectric constant and multiply by electrostatic charge quantity divided by electrostatic charge voltage.
8. the method for measurement silicon oxide layer-silicon nitride-silicon oxide layer electrical thickness according to claim 7 is characterized in that: electrical thickness equals dielectric constant and multiply by the surface area of second silicon oxide layer divided by electric capacity.
9. the method for measurement silicon oxide layer-silicon nitride-silicon oxide layer electrical thickness according to claim 1 is characterized in that: form first silicon oxide layer, silicon nitride layer and second silicon oxide layer with chemical vapour deposition technique.
10. the method for measurement silicon oxide layer-silicon nitride-silicon oxide layer electrical thickness according to claim 9, it is characterized in that: the thickness of described first silicon oxide layer is 60 dust to 80 dusts, the thickness of silicon nitride layer is 50 dust to 70 dusts, and the thickness of second silicon oxide layer is 40 dust to 60 dusts.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103426783A (en) * | 2012-05-24 | 2013-12-04 | 上海宏力半导体制造有限公司 | Method for immediately detecting reliability of oxide nitride oxide film |
| CN103928362A (en) * | 2014-03-24 | 2014-07-16 | 上海华力微电子有限公司 | Method for monitoring silicon loss in silicon oxide deposition process |
| CN113506756A (en) * | 2021-06-28 | 2021-10-15 | 上海华虹宏力半导体制造有限公司 | HTO oxide layer process method in ONO process |
| CN114664797A (en) * | 2022-03-24 | 2022-06-24 | 苏州英嘉通半导体有限公司 | Passivation layer measuring structure and measuring method |
-
2006
- 2006-11-28 CN CNA2006101188102A patent/CN101192553A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103426783A (en) * | 2012-05-24 | 2013-12-04 | 上海宏力半导体制造有限公司 | Method for immediately detecting reliability of oxide nitride oxide film |
| CN103928362A (en) * | 2014-03-24 | 2014-07-16 | 上海华力微电子有限公司 | Method for monitoring silicon loss in silicon oxide deposition process |
| CN103928362B (en) * | 2014-03-24 | 2016-05-25 | 上海华力微电子有限公司 | The method of silicon loss in monitoring silica depositing operation |
| CN113506756A (en) * | 2021-06-28 | 2021-10-15 | 上海华虹宏力半导体制造有限公司 | HTO oxide layer process method in ONO process |
| CN113506756B (en) * | 2021-06-28 | 2024-04-23 | 上海华虹宏力半导体制造有限公司 | HTO oxide layer process method in ONO process |
| CN114664797A (en) * | 2022-03-24 | 2022-06-24 | 苏州英嘉通半导体有限公司 | Passivation layer measuring structure and measuring method |
| CN114664797B (en) * | 2022-03-24 | 2024-03-12 | 苏州英嘉通半导体有限公司 | Passivation layer measuring structure and measuring method |
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