CN101183201B - Manufacturing method of the flexible display device - Google Patents
Manufacturing method of the flexible display device Download PDFInfo
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- CN101183201B CN101183201B CN2007101275529A CN200710127552A CN101183201B CN 101183201 B CN101183201 B CN 101183201B CN 2007101275529 A CN2007101275529 A CN 2007101275529A CN 200710127552 A CN200710127552 A CN 200710127552A CN 101183201 B CN101183201 B CN 101183201B
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/165—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on translational movement of particles in a fluid under the influence of an applied field
- G02F1/166—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on translational movement of particles in a fluid under the influence of an applied field characterised by the electro-optical or magneto-optical effect
- G02F1/167—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on translational movement of particles in a fluid under the influence of an applied field characterised by the electro-optical or magneto-optical effect by electrophoresis
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/165—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on translational movement of particles in a fluid under the influence of an applied field
- G02F1/1675—Constructional details
- G02F1/16755—Substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3063—Electrolytic etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
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Abstract
A method for manufacturing a flexible display device in which a flexible substrate is acquired by forming display devices on one side of the substrate and thinning the substrate by removing surface portions on an opposite side of the substrate. The thickness of the substrate is changed from a first thickness, which gives rigidity to the substrate to the second thickness, which gives flexibility to the substrate.
Description
It is that the application number of submitting in 10-2006-112151 and on November 28th, 2006 is the rights and interests of the korean patent application of 10-2006-118457 that the application requires to enjoy the application number of submitting on November 14th, 2006, quotes its full content as a reference at this.
Technical field
The present invention relates to the manufacture method of a kind of flexible display device and flexible display device.More specifically, the present invention relates to a kind of flexible display device and manufacture method thereof of improving reliability and reducing defective.
Background technology
On the market of display device, flat-panel monitor (FPD) has substituted the cathode ray tube (CRT) display and has caught on.FPD comprises for example LCD (LCD), plasma display (PDP) or display of organic electroluminescence (OLED).FPD is lighter and thinner than CRT.FPD can easily be applied to large scale display system or portable display system.Glass substrate is applied among the FPD because it can stand the high temperature in the manufacture process.Because rigidity (rigid property) at room temperature, glass substrate is unsuitable for flexible display device.Recently, flexible material is used for the flexible display device that FPD can be curled or fold with research and development.This flexible display device can be out of shape in any case.Use for example flexible material of plastic foil, the flexible display device that has identical display performance under curling or case of bending catches on.
Fig. 1 shows the process flow diagram according to the manufacture method of the flexible display device of correlation technique.With reference to Fig. 1, manufacture method comprises that adhesion operation (S1), display panel form operation (S3) and stripping process (S5).In adhering to operation (S1), the back side that rigid substrates temporarily is bonded in flexible base, board is used for the supporting flexible substrate rigidly in manufacturing process.So also handle flexible base, board easily.The rigid support substrate that is bonded in the flexible base, board back side is fixing flexible substrate and prevent flexible base, board distortion or distortion also.Had by adhering to the supported flexible base, board that operation (S1) provides, can carry out display panel more accurately with stable manner and form operation (S3).
Display panel forms operation (S3) and comprises and be used to form and will become the operation of various patterns of the driving element of display panel.For example, the flexible display device for being driven by thin film transistor (TFT) (TFT) should form tft array on flexible base, board.Stripping process (S5) is finished display panel formation operation (S3) afterwards from flexible base, board separation supporting substrate and bonding agent.The rigid support substrate by temporarily bonding, and is removed from flexible base, board finishing display panel formation operation (S3) in adhering to operation (S1) afterwards.The removal of rigid substrates can maximize the flexibility (flexible property) of flexible display device.
Bonding agent forms in the operation (S3) at display panel and is not preferably hardened fully, with easily with flexible base, board from the rigid support strippable substrate.The upper limit that display panel forms the temperature of operation (S3) is to be lower than 150 ℃.Yet it can change according to the kind of bonding agent.May experience degraded performance at 150 ℃ of TFT driving elements that form down.The driving voltage instability of TFT can influence the reliability of flexible display device like this.
In addition, in adhering to operation (S1), do not wish between flexible base, board and adhesive linkage, to form bubble.Bubble can make display panel form the reliability degradation of operation (S3).Can use extra equipment between flexible base, board and rigid support substrate, applying adhesive linkage, and can not form bubble.The research and development of this equipment and the meeting of use increase manufacturing expense.Bonding agent can not fully be removed from flexible base, board in stripping process (S5).The TFT pattern may be separated the power of flexible base, board from the rigid support substrate to be damaged.The pattern that damages in stripping process (S5) makes the reliability degradation of display device.Therefore, the manufacture method that needs a kind of flexible display device of the shortcoming that eliminate correlation technique.
Summary of the invention
In one embodiment, a kind of manufacture method of flexible display comprises provides the substrate with first thickness and form display device on the one side of substrate.Remove surface portion from the opposite face of substrate, thereby the thickness of substrate becomes second thickness from first thickness, wherein substrate is a rigidity at first thickness basically, and substrate is flexible at second thickness basically.
In another embodiment, a kind of manufacture method of flexible display device comprises provides first and second panels, wherein each panel display device of having substrate and forming on substrate front side.The front of first panel is attached to the positive of second panel and removes surface portion from the back side of the substrate of first and second panels, thereby the thickness of substrate becomes second thickness from first thickness, wherein substrate is a rigidity at first thickness basically, substrate is flexible at second thickness basically, and separates first and second panels.
In another embodiment, a kind of manufacture method of flexible display device comprises first substrate that the rigidity basically with first thickness is provided and second substrate of the rigidity basically with second thickness is provided.With the front of first substrate and the front combination of second substrate.With first substrate thinning to the, three thickness, thereby first substrate becomes substantial flexibility.Thereby second substrate thinning to the, four thickness second substrates is become substantial flexibility.
Description of drawings
These and other purposes of the present invention become in the detailed description of embodiments of the present invention obviously with reference to the accompanying drawings, in the accompanying drawing:
Fig. 1 shows the process flow diagram according to the manufacture method of the flexible display device of correlation technique;
Fig. 2 shows the manufacture method according to the flexible display device of first embodiment;
Fig. 3 shows by display panel shown in Figure 2 and forms the display element that operation is made;
Fig. 4 shows an example of the thinning operation of Fig. 2;
Fig. 5 shows another example of the thinning operation of Fig. 2;
Fig. 6 shows the manufacture method according to the flexible display device of second embodiment;
Fig. 7 A and 7B show according to second embodiment in conjunction with operation;
Fig. 8 shows an example according to the thinning operation of second embodiment;
Fig. 9 shows another example according to the thinning operation of second embodiment;
Figure 10 A and 10B show the separation circuit according to second embodiment; And
Figure 11 A shows the different cutting methods of using together with the separation circuit of Figure 10 A and 10B with 11B.
Embodiment
With reference to accompanying drawing and by preferred implementation objects and advantages of the present invention will be described.With reference to Fig. 2 to Fig. 5 first embodiment will be described.
Fig. 2 shows the manufacture method according to the flexible display device of first embodiment.In Fig. 2, the manufacture method of flexible display comprises that display device forms operation (S21) and thinning operation (S23).Form in the operation (S21) at display device, on rigidity (inflexibility) substrate, form various patterns.Pattern will become the part of flexible display.For example, electrophoretic display device, EDD (EPD) shown in Figure 3 forms operation (S21) formation by display device.EPD utilizes electrophoresis, and in described electrophoresis, when applying electric field, the particulate that has electric charge moves to negative electrode or anode.Form in the operation (S21) at display device, by to the thin film transistor (TFT) on the non-flexible substrate (or TFT) array composition, and the upper strata that will comprise electrophoretic particle is bonded in and forms EPD on the tft array.
In Fig. 3, the EPD that forms operation (S21) manufacturing by display device comprises array 41 and last array 43 down.Last array 43 comprises flexible base film 82, is formed on the top electrode 84 on the basement membrane 82 and comprises the pigment particle that has electric charge and is arranged on micro-capsule 85 on the top electrode 84.Basement membrane 82 is made by plastics or flexible thin metal forming.Micro-capsule 85 comprises the mineral black particulate 85a that attracted to negative voltage, white pigments particulate 85b (vice versa) and the solution 85c that attracted to positive voltage.In addition, following array 41 comprises that adhesive linkage 86 bonds to the following array of finishing 41 will go up array 43.
Following array 41 is included in many grid lines and many data line (not shown) intersected with each other on the infrabasal plate 31.Gate insulation layer 33 is clipped between grid line and the data line.At each infall, thin film transistor (TFT) 6 and pixel electrode 17 are formed in the unit area that is limited by grid line and data line.The thickness of infrabasal plate 31 is first thickness, and it is enough firm can stand the distortional stress under the process conditions in display device formation operation (S21).
On infrabasal plate 31, add cushion with the homogeneity of strengthening infrabasal plate 31 surfaces and be partitioned to or from the heat transmission or the electric current of infrabasal plate 31.TFT 6 comprises the grid 8 that is applied with gate voltage, the source electrode 10 that is connected to data line, the drain electrode 12 that is connected to pixel electrode 17 and and grid 8 is overlapping and at source electrode 10 with drain and form the active layer 14 of raceway groove between 12.Active layer 14 is overlapping with source electrode 10 and drain electrode 12, thereby forms the raceway groove that electronics flows between them.On active layer 14, ohm layer 16 is separately positioned on the below of source electrode 10 and drain electrode 12, to form Ohmic contact between electrode and channel layer 14.Active layer 14 and ohm layer 16 are called as semiconductor layer 18.Pixel electrode 17 physically and electrically is connected to drain electrode 12 by contact hole 19.Contact hole 19 exposes drain electrode 12 by running through the passivation layer 35 that covers TFT 6.
The drive principle of EFP is as follows.When gate voltage was applied to down grid 8 in the array 41, picture signal was applied to data line by the raceway groove of TFT 6, and it is to pixel electrode 17 chargings.Simultaneously, base voltage is applied to the top electrode 84 in the array 43.Therefore, in EPD, form electric field.By electrophoresis, mineral black particulate 85a separates in micro-capsule 85 with white pigments particulate 85b.According to the quantity of separating, can present the degree of black, white or gray level.
Because the environmental characteristic of manufacturing process, tft array is formed on the rigid substrates with first thickness.Only as an example, the scope of first thickness is at 0.6mm to 0.7mm.First thickness is suitable for the situation of glass as substrate.Can select this condition by considering the substrate thickness that is used for LCD (LCD).In addition, having the rigid substrates of first thickness can be through being subject to processing heat.Can under the situation of restriction that is not subjected to the process temperature condition or constraint, form the tft array of EPD.Therefore, can be higher than the tft array that forms EPD under 150 ℃ the process temperature, and can guarantee the superperformance quality of driving element (TFT).
Rigid substrates can comprise metal substrate, metal alloy substrate etc.Preferably, rigid substrates comprises stainless steel (SUS or STS: below be called as " SUS ").The metal substrate that comprises Fe family is suitable for the thinning operation, because Fe is etched easily.Yet, be not limited thereto, and can use the metal substrate that comprises Al, Ni etc.Can select first thickness according to the material of substrate.For example, when SUS was used for the flexible base, board of EPD, first thickness was about 0.5-0.6mm.Thereby the flexural property that can select the thickness rigid substrates of metal substrate can be similar to the glass substrate of 0.6-0.7mm.Such advantage is that the manufacturing process and the equipment that are used for glass substrate can be used for rigid substrates.As another example, if production line is optimised for the SUS substrate of 0.3mm, first thickness of SUS substrate is 0.3mm, and similar flexural property and production line that the SUS substrate of wherein said 0.3mm has the glass substrate of 0.35-0.45 can be applied to the present invention.
Get back to Fig. 2, thinning operation (S23) is the etching work procedure that carries out on the another side of the inflexibility with first thickness, rigid substrates.Thinning operation (S23) reduces the thickness of first substrate.Utilize thinning operation (S23), first substrate becomes second substrate that has than second thickness of first thin thickness.Therefore, second substrate can show flexibility.Rigidity first substrate be thinned to original substrate thickness 35% or still less.For flexibility, 65% or be removed of first thickness more.For example, for the SUS substrate, when reducing to about 0.2mm, second thickness can show flexibility.
In other embodiments, second thickness can be various other thickness.The weight of substrate depends on the thickness of substrate.Along with substrate becomes heavy, it trends towards easier bending.Preferably reduce substrate thickness, thereby reduce weight and can minimize the bending of substrate.For example, second thickness can be 0.1mm, 0.05mm etc.Even second thickness is very little, 0.05mm for example, have the display device of second thickness since be positioned on second substrate other structures and can be crooked, for example screening glass, capsule etc. slightly.
By carrying out thinning operation (S23) with second of etchant contact (relative) with first that forms display device.Etchant comprises for example halogen of chlorine (Cl), bromine (Br) and iodine (I).For the SUS substrate, etchant preferably includes iron chloride (FeCl
2).To describe thinning operation (S23) in detail with reference to Fig. 4 and Fig. 5.
In Fig. 4, form operation (S21) afterwards finishing display device, display panel be installed in travelling belt 45 and down array 41 the back side up.As mentioned above, tft array is formed on down on the one side of non-flexible substrate 31 of array 41.This face is in the face of the surface of travelling belt 45.The opposite face (back side) of the non-flexible substrate 31 of following array 41 up.The opposite face that exposes of the non-flexible substrate 31 of following array 41 sprays from the nozzle 47 that is installed in travelling belt 45 tops with etchant 49 etchings, described etchant.
With reference to Fig. 5, show another example of thinning operation (S23).Finish display device formation operation (S21) afterwards, the non-flexible substrate 31 of following array 41 is dipped in the groove 57 that is filled with etchant 49.As mentioned above, on the one side of the non-flexible substrate 31 of descending array 41, be formed with tft array.The opposite face of the non-flexible substrate 31 of following array 41 is immersed in the etchant 49.Then, the one side that is dipped into by the etching work procedure thinning.For fixing array 41 down in etching work procedure, last array 43 can be attached the fixed mechanism 59 that is comprising vacuum absorption device.After the non-flexible substrate 31 of array 41 is etched to second thickness down, by using the residue etchant 49 on the array 41 under the removal of cleaning fluid or other cleaning liquids.
As mentioned above, the one side of rigid substrates has first thickness, and the another side of rigid substrates is etched and have second thickness and think that rigid substrates brings flexibility.Therefore, the method for flexible display device does not need to adhere to operation and stripping process (see figure 1).Do not use the interim cementing agent that is used for bonding rigid substrates, can carry out pyroprocessing like this.Therefore, can improve the reliability of flexible display device.
In addition, display device forms and can tolerate on the rigid substrates of manufacturing process's condition.Can not increase manufacturing cost and can obtain and have now the compatibility of making device.
With reference to Fig. 6 to Figure 11 B second embodiment is described.Fig. 6 shows the process flow diagram according to the manufacture method of the flexible display device of second embodiment.Second embodiment comprise display device form operation (S31), in conjunction with operation (S33), thinning operation (S35) and separation circuit (S37).
The display device of describing in second embodiment in conjunction with top Fig. 2 forms operation (S31).In second embodiment, with an etching work procedure two display panels of thinning side by side with non-flexible substrate basically.Prepare the first panel 40a and the second panel 40b to finish first substrate and second substrate that display device formation operation (S31) has the display device on first that is included in separately afterwards respectively.In this embodiment, the first panel 40a and the second panel 40b are used for EPD shown in Figure 3.First and second panels can be identical.Alternatively, first and second substrates can have different-thickness and/or different metal alloy or metal.
Forming operation (S31) in conjunction with operation (S33) at display device carries out afterwards.First and second panels are combined so that first and second surface of first base face with each other.First face comprises display device.With reference to Fig. 7 A, by on the first substrate 31a and the second substrate 31b, following pattern 49a and the 49b composition that comprises tft array and pixel electrode being prepared the first panel 40a and the second panel 40b.Two substrates 31a and 31b have first thickness d 1 of bringing rigidity for substrate, and comprise array 43a and 43b respectively.In addition, substrate 31a and 31b can have different-thickness.The first panel 40a and the second panel 40b comprise first area (A1) with display device and the second area (A2) except that first area (A1).Second area (A2) is to surround first and second panel 40a of first area (A1) and the marginal portion of 40b.Sealant 45 is coated on one of them the second area at least of the first panel 40a and the second panel 40b.Sealant 45 is not coated in the first area (A1).
After solidifying (or sclerosis) sealant 45, the first and second panel 40a and 40b and first and second rigid substrates 31a respect to one another and 31b combination.Shown in Fig. 7 B, display device is formed on the first and second rigid substrates 31a and the 31b.
Afterwards, remove the second surface of the first substrate 31a and the second substrate 31b by the engraving method of thinning operation (S35) in conjunction with operation (S33).Following pattern 49a and 49b and go up array 43a and 43b is not formed on the second surface of the first and second substrate 31a among Fig. 6 and 31b.After etching, two substrates has second thickness (d2).Second thickness (d2) is that the first substrate 31a and the second substrate 31b bring flexibility.For example, second thickness (d2) be first thickness (d1) 35% or still less.If substrate is the SUS substrate, second thickness (d2) can be for example about 0.2mm or still less.Alternatively, two substrates can have for example different-thickness of the 3rd thickness (d3) and the 4th thickness (d4).
As shown in Figure 8, carry out thinning operation (S35), thereby etch the first and second substrate 31a and 31b second by the first and second panel 40a of combination and 40b are immersed in the groove 53 that is filled with etchant 51.Etchant 51 contains for example halogen of chlorine (Cl), bromine (Br) and iodine (I).For the situation of SUS substrate, etchant 51 preferably includes iron chloride (FeCl
2).If the first and second panel 40a and 40b have different-thickness, they have the 3rd thickness (d3) and the 4th thickness (d4) afterwards in thinning operation (S35).
Etched along with the first and second substrate 31a and 31b second, their thickness is reduced to second thickness (d2), perhaps preferably the 3rd thickness (d3) and/or the 4th thickness (d4).The first panel 40a and the second panel 40b can have flexibility.Sealant 45 prevents that etchant 51 from invading in the first area of the first panel 40a and the second panel 40b.Therefore, can protect display device in the first area that is formed on the first and second panel 40a and 40b to avoid the possible damage of etchant 51.
In another example that carries out thinning operation (S35), come the etching first substrate 31a and the second substrate 31b by the etchant 51 that sprays from nozzle 55 second.With reference to Fig. 9, in conjunction with the first and second panel 40a and 40b be installed on the travelling belt 57.Second of the first and second substrate 31a and 31b one of them be exposed to the etchant 51 that sprays from nozzle 55.Second face of the first substrate 31a is exposed to etchant and is etched to second thickness (d2).Subsequently, in conjunction with panel is reversed to expose and second of the etching second substrate 31b.The second substrate 31b is also etched to second thickness (d2).So the first panel 40a and the second panel 40b have flexibility.Alternatively, etchant can be coated to the first and second panel 40a and 40b first and second.In addition, in conjunction with panel 40a and 40b when they are placed on the travelling belt 57, can hard straight place, thereby be exposed to etchant simultaneously on first and second substrate.By type and/or the amount of differentiated at the etchant of each face, through the thinning operation, the first panel 40a can have two different thickness with the second panel 40b.In addition, the thickness by differentiated first and second panel 40a and 40b can obtain two different-thickness after the thinning operation.
As illustrated in conjunction with Fig. 8, sealant 45 can prevent that etchant 51 from invading in the first area of the first panel 40a and the second panel 40b.Therefore, the display device that is formed in the first area of the first and second panel 40a and 40b can protectedly be avoided may damaging of etchant.Remove remaining etchant 51 by using cleaning fluid or other cleaning liquids.
Get back to Fig. 6, the first and second panel 40a and the 40b of combination is separated into independent display panel by separation circuit (S37).Figure 10 A shows the first substrate 31a and the second substrate 31b and still combines togather afterwards and have second thickness (d2) finishing thinning operation (S35).
Shown in Figure 10 B, along line of cut (B), it is separated from one another to remove the sealant 45 and the first panel 40a and the second panel 40b.Line of cut (B) preferably is arranged between first area (A1) and the sealant 45.The first panel 40a and the second panel 40b that separate comprise the first substrate 31a and the second substrate 31b that has second thickness (d2) respectively.Therefore, by utilizing single manufacturing process to obtain two flexible display panels.Can improve the manufacturing process of output and balance flexible display panels and the speed of other manufacturing processes like this.
Figure 11 A and 11B show the different cutting methods of separation circuit (S37).Having second thickness (d2) owing to the panel of combination is that panel brings flexibility, easily along the panel of line of cut (B) cutting combination.For example, shown in Figure 11 A, can be along first and second panel 40a and the 40bs of line of cut (B) with stitch marker 81 separating and combining.Stitch marker 81 is made greater than the material of the first and second substrate 31a and 31b by intensity.For example, stitch marker 81 is made by adamas or DLC (diamond-like coating) material.
Figure 11 B shows another example of cutting method.First and second panel 40a and the 40b with the crush-cutting machine 83 cutting combinations that comprise blade 85.(B) depresses blade 85 along line of cut.To rotatablely move and be converted to back and forth movement with being included in crank (not shown) in the crush-cutting machine 83.Crush-cutting machine 85 is by pressing down panel 40a along line of cut (B) with hydraulic pressure and 40b cuts.Other examples of cutting method comprise plasma cutting, gas cutting, cut and hydraulic pressure cutting.
In second embodiment, bond to down and carry out thinning operation (S35) after the array will going up array.Alternatively, will go up array afterwards and bond to down array finishing separation circuit (S37).
One side by etching substrates after forming display device at opposite face obtains flexible base, board.Therefore, the thickness of substrate becomes second thickness that brings flexibility for substrate from first thickness that brings rigidity for substrate.In addition, any etch-damaged in order to prevent on the display device, and in order to improve the output of thinning operation, be bonded to each other at two panels that will have a display device on first by sealant before the etching work procedure, two independent flexible base, boards can be obtained, and manufacturing cost can not be increased without any the flexible display panels of defective.
Clearly, those skilled in the art can make modifications and variations to the present invention on the basis that does not deviate from the spirit or scope of the present invention.Therefore, this invention is intended to cover the various modifications and variations that fall in claim of the present invention and the equivalent scope thereof.
Claims (20)
1. the manufacture method of a flexible display, this method comprises:
Substrate with first thickness is provided and on the one side of substrate, forms display device; And
Remove surface portion from the opposite face of substrate, thereby the thickness of substrate becomes second thickness from first thickness, wherein, substrate is essentially rigidity at first thickness, and substrate is essentially flexible at second thickness,
Wherein substrate has rigidity characteristics and has flexible characteristic at second thickness at first thickness.
2. method according to claim 1 is characterized in that, the step of described removal surface portion comprises that the opposite face to substrate carries out wet chemical etching.
3. method according to claim 2 is characterized in that wet chemical etching comprises the opposite face that etchant is sprayed onto substrate.
4. method according to claim 2 is characterized in that, wet chemical etching comprises that the opposite face with substrate is immersed in the etching bath.
5. method according to claim 1 is characterized in that, the described step that substrate is provided comprises provides the metal alloy substrate, and the step of described removal surface portion comprises and uses the halogen etching.
6. method according to claim 1 is characterized in that, the described step that substrate is provided comprises provides metal substrate, and the step of described removal surface portion comprises the etchant etching with the selection that is suitable for metal substrate.
7. method according to claim 1 is characterized in that, the described step that substrate is provided comprises provides stainless steel substrate, and the step of described removal surface portion comprises and uses the iron chloride etching.
8. method according to claim 1 is characterized in that, the step of described removal surface portion comprises substrate is etched into about 0.2mm or second thickness still less.
9. method according to claim 1 is characterized in that, the step of described formation display device is included in and forms tft array on the substrate, is positioned at the passivation layer of tft array top and the adhesive linkage that is positioned at the passivation layer top.
10. method according to claim 9 is characterized in that, also comprises:
Basement membrane is provided and on basement membrane, forms the electrophoresis showed parts; And
The electrophoresis showed parts are attached to substrate, thereby the electrophoresis showed parts are bonded to substrate by adhesive linkage.
11. the manufacture method of a flexible display device, this method comprises:
Provide first and second panels, wherein each panel display device of having substrate and on substrate front side, forming;
The front of first panel is attached to the front of second panel;
Remove surface portion from the back side of the substrate of one of them at least of first panel or second panel, thereby the thickness of substrate becomes second thickness from first thickness, substrate is a rigidity at first thickness basically, and substrate is flexible at second thickness basically; And
Separate first and second panels,
Wherein substrate has rigidity characteristics and has flexible characteristic at second thickness at first thickness.
12. method according to claim 11, it is characterized in that, first and second panels comprise viewing area and non-display area, and described front with first panel step that is attached to the front of second panel is included on the non-display area of combination of first panel, second panel or first panel and second panel and forms sealant.
13. method according to claim 11 is characterized in that, the step that surface portion is removed at the back side of the described substrate of one of them at least from first panel or second panel comprises the back side that wet chemical etchants is sprayed onto substrate.
14. method according to claim 13 is characterized in that, the step that surface portion is removed at the back side of the described substrate of one of them at least from first panel or second panel comprises that the back side with substrate is immersed in the etching bath.
15. method according to claim 11 is characterized in that, also is included in separation first and second panels and cuts first and second panels before.
16. method according to claim 11 is characterized in that, also is included in each of separating first and second panels and afterwards the array of electrophoresis showed parts being bonded to first and second panels.
17. the manufacture method of a flexible display device, this method comprises:
First substrate of the rigidity basically with first thickness is provided;
Second substrate of the rigidity basically with second thickness is provided;
With the front of first substrate and the front combination of second substrate;
With first substrate thinning to the, three thickness, thereby first substrate becomes substantial flexibility; And
With second substrate thinning to the, four thickness, thereby second substrate becomes substantial flexibility,
Wherein first substrate has rigidity characteristics and has flexible characteristic at the 3rd thickness at first thickness, and second substrate has rigidity characteristics and has flexible characteristic at the 4th thickness at second thickness.
18. method according to claim 17 is characterized in that, the step of described thinning first substrate comprises first substrate is immersed in etching bath; And the step of described thinning second substrate comprises second substrate is immersed in etching bath; And
Wherein side by side first substrate and second substrate are immersed in etching bath basically.
19. method according to claim 17 is characterized in that, the step of described thinning first substrate comprises the back side that etchant is sprayed onto first substrate; And
The step of described thinning second substrate comprises: the back side that exposes second substrate; And when etchant being sprayed onto on first substrate or after etchant is sprayed onto first substrate, etchant is sprayed onto on the back side of second substrate.
20. method according to claim 17 is characterized in that, first thickness equals second thickness, and the 3rd thickness equals the 4th thickness.
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020060112151 | 2006-11-14 | ||
| KR1020060112151A KR20080043507A (en) | 2006-11-14 | 2006-11-14 | Flexible display device and manufacturing method thereof |
| KR10-2006-0112151 | 2006-11-14 | ||
| KR1020060118457 | 2006-11-28 | ||
| KR10-2006-0118457 | 2006-11-28 | ||
| KR1020060118457A KR101358385B1 (en) | 2006-11-28 | 2006-11-28 | Manufacturing method of flexible display device |
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| CN101183201A CN101183201A (en) | 2008-05-21 |
| CN101183201B true CN101183201B (en) | 2011-03-23 |
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| CN2007101275529A Active CN101183201B (en) | 2006-11-14 | 2007-06-28 | Manufacturing method of the flexible display device |
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| KR101285636B1 (en) * | 2008-06-27 | 2013-07-12 | 엘지디스플레이 주식회사 | Manufacturing method of flexible liquid crystal display device |
| TWI560510B (en) | 2012-03-27 | 2016-12-01 | E Ink Holdings Inc | Electronic ink display device and method for manufacturing the same |
| CN103286809A (en) * | 2013-05-15 | 2013-09-11 | 复旦大学 | Production sample making method of flexible display panel |
| CN105158957A (en) | 2013-07-03 | 2015-12-16 | 京东方科技集团股份有限公司 | Preparing method for flexible display and flexible display |
| CN106530972B (en) * | 2016-12-20 | 2017-12-29 | 深圳市华星光电技术有限公司 | The preparation method of flexible array substrate |
| CN110238526B (en) * | 2019-07-17 | 2022-01-18 | 昆山龙腾光电股份有限公司 | Display panel manufacturing method, display panel and welding device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1509125A (en) * | 2002-12-14 | 2004-06-30 | ����Sdi��ʽ���� | Substrate manufacturing method, method for manufacturing organic electroluminescent display device and the device thereof |
| CN1517749A (en) * | 2003-01-10 | 2004-08-04 | 日本电气株式会社 | Flexible electronic device and its manufacturing method |
| CN1801479A (en) * | 2005-01-03 | 2006-07-12 | 三星电子株式会社 | Method of manufacturing a flexible thin film transistor array panel including plastic substrate |
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- 2006-11-14 KR KR1020060112151A patent/KR20080043507A/en not_active Application Discontinuation
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1509125A (en) * | 2002-12-14 | 2004-06-30 | ����Sdi��ʽ���� | Substrate manufacturing method, method for manufacturing organic electroluminescent display device and the device thereof |
| CN1517749A (en) * | 2003-01-10 | 2004-08-04 | 日本电气株式会社 | Flexible electronic device and its manufacturing method |
| CN1801479A (en) * | 2005-01-03 | 2006-07-12 | 三星电子株式会社 | Method of manufacturing a flexible thin film transistor array panel including plastic substrate |
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| KR20080043507A (en) | 2008-05-19 |
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