CN101182566A - Biology sensing chip with III-V groups nitrifier cell attaching layer - Google Patents

Biology sensing chip with III-V groups nitrifier cell attaching layer Download PDF

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CN101182566A
CN101182566A CNA2006101387290A CN200610138729A CN101182566A CN 101182566 A CN101182566 A CN 101182566A CN A2006101387290 A CNA2006101387290 A CN A2006101387290A CN 200610138729 A CN200610138729 A CN 200610138729A CN 101182566 A CN101182566 A CN 101182566A
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cell
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attaching layer
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陈启瑞
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YAN ZONGXIAN
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Abstract

The invention discloses a bio-sensing chip which is provided with a sticking layer of III-V nitride cell and aims at solving the problem that the cell can not be stuck properly on the chip with prior art. The chip comprises a cell sticking layer and a sensing and analyzing system which is connected with the cell sticking layer; the cell sticking layer is III-V nitride which is used for providing place for the sensing cell to be stuck and grow. Based on the bio-sensing chip of the invention, the sticking effect between the cell and the cell sticking layer is enhanced and the growth and differentiation of the cell is promoted and the death rare of the cell is reduced; moreover, the invention can be used for long-term detection and analysis.

Description

The biology sensing chip of tool III-V group-III nitride cell attaching layer
Technical field
The present invention relates to a kind of biology sensing chip, relate in particular to a kind of biology sensing chip of the III-V of having group-III nitride cell attaching layer.
Background technology
In recent years, in conjunction with electronics and biosystem, stimulating neuronal cell or collect the neuron chip of the signal that neurone sent has caused widely and has noted.Mainly be owing to the potential application of neuron chip in fields such as medicine and living doctors, as: this neuron chip can develop into one and be used to provide the drug sieve procuratorial organ formula of pharmaceutical industry as a kind of advanced person, so that can find out the medicine of research prospect fast; Or cell combined with silicon circuit, create accurate neurone artifucial limb, neuronic unusual to treat; Also or develop and organic computer etc.Technological standpoint by the neuron chip development provides cell to adhere well to suitable chip surface, is a most important condition of exploitation neuron chip.The chip that is used for neuron system at present, number system is used the device based on silicon substrate mostly.Yet; silicon is very low for neuronic bio-compatibility; for promoting cell to attach, grow and keep the survival rate of cell; regular meeting is in the surface coated bioactive molecules of silicon, as: poly-from amino acid, collagen protein, glutinous albumen (fibronectin), the glutinous albumen (laminin) etc. that connects of layer of connecting of fiber.But this type of bioactive molecules generally is the surface of coating silicon substrate with the physical property suction type, and the bioactive molecules of coating very easily comes off in the cleaning step of chip, and promptly it is not to be a nonvolatil modification.The general silicon surface bioactive molecules of normal coating, is adsorbed in the poly-of silicon surface with physical property and may produces desorption gradually or the phenomenon of breaking and refining from amino acid along with the growth of time for poly-from amino acid.Point out in the part Study report, when the poly-free fraction excessive concentration from amino acid, can cause Cytotoxic phenomenon generation.
In order to address the above problem, be necessary to provide a kind of biology sensing chip with new cell cultures base material, this cell cultures base material need not to be coated with and poly-ly can promote the attaching growth of cell from amino acid, to improve the poly-toxicity problem that pair cell is produced when amino acid dissociates.
Summary of the invention
For solving defective of the prior art and deficiency, the object of the present invention is to provide a kind of biology sensing chip, has good adhesion effect between the cell attaching layer on the cell that it detected and this chip, can impel cell growth, differentiation, and reduce cell mortality, in long check and analysis.
For achieving the above object, biology sensing chip of the present invention includes a cell attaching layer and a check and analysis system, and this cell attaching layer is an III-V group-III nitride, is used to provide the cell that will detect to attach and the place of growing.
Transmitter of the present invention can be new drug screening chip, gives birth to doctor's sensing component or neural network chip.This new drug screening chip wherein, in order to of the reaction of test active somatic cell to novel drugs, can more accurate screening and the function of prediction new drug, and significantly shorten the time-histories of drug development; This gives birth to doctor's sensing component, utilizes neurocyte to stimulate responsive especially characteristic in some, can be used to detect the change of situation in the environment, as the change of gas concentration lwevel, ferment detection etc.; The application of this neural network, the environment that provides cell to grow by this cell attaching layer, and sensing array at the Noninvasive research of neural signal is provided, set up with the direct information of active somatic cell and get in touch, with the propagation of research brain function and neural signal.
Wherein, such neural network chip comprises: a substrate; One circuit layer is located at the surface of this substrate; And the cell attaching layer of an III-V group-III nitride, be formed at the surface of this circuit layer, in order to provide cell to attach and the place of growth.
Further, the plural wires that each limit of this circuit layer and this cell attaching layer below are respectively equipped with plurality of electrodes and are electrically connected with this electrode is in order to measure the variation situation of cell surface current potential.This electrode is to be selected from one of group that precious metals such as gold and silver, rhenium, ruthenium, rhodium, palladium, silver, osmium and iridium form.This plural wires can be metal or metal alloy such as the indium oxide, cadmium tin-oxide, antimony, chromium, silver, copper of indium tin oxide, tin-oxide, the doped zinc oxide of electroconductibility.
According to one embodiment of the invention, with the cell cultivation chip surface of cell cultures in tool III-V group-III nitride film cell attaching layer, cultivating base material with other compares down, need not be coated with poly-from bioactive moleculess such as amino acid can strengthen desire good adhesion effect between culturing cell and this cell attaching layer, and can promote the growth and the differentiation of cell, reduce cell mortality.This cell cultivation chip can be applicable in neurocyte, neural stem cell, class neurocyte, muscle cell and the isocellular cultivation of myocardial cell.In addition, according to another embodiment of the present invention, neural network chip in conjunction with this tool III-V group-III nitride cell attaching layer, utilize the III-V group-III nitride cell attaching layer on such neural network chip upper strata that cell attaching and the environment of growing are provided, and by received current to cell, the irritation cell activity, the signal of using between observation of cell changes.
Description of drawings
Figure 1A is a cell cultivation chip synoptic diagram of the present invention;
Figure 1B is another synoptic diagram of cell cultivation chip of the present invention;
Fig. 2 is the growth situation of neurone after the cell cultivation chip of different cell attaching layer base materials is cultivated 6 days down;
Fig. 2 (A) is the growth situation of neurone after the cell cultivation chip of U type gan cell attaching layer base material is cultivated 6 days down;
Fig. 2 (B) is the growth situation of neurone after the cell cultivation chip of n type gallium nitride cell attaching layer base material is cultivated 6 days down;
Fig. 2 (C) is the growth situation of neurone after the cell cultivation chip of P type gan cell attaching layer base material is cultivated 6 days down;
Fig. 2 (D) is the growth situation of neurone after the cell cultivation chip of silicon cell attaching layer base material is cultivated 6 days down;
Fig. 2 (E) is the growth situation of neurone after the cell cultivation chip of TCPS (promptly not inserting the tissue culture polyethylene pan of any chip, as the control group) cell attaching layer base material is cultivated 6 days down;
Fig. 3 is neuronic relative survival rate;
Fig. 4 is the growth situation of neurone after the cell cultivation chip of different cell attaching layer base materials is cultivated 35 days down;
Fig. 4 (A) is the growth situation of neurone after the cell cultivation chip of gan cell attaching layer base material is cultivated 35 days down;
Fig. 4 (B) is the growth situation of neurone after poly-cell cultivation chip from propylhomoserin cell attaching layer base material is cultivated 35 days down;
Fig. 4 (C) is the growth situation of neurone after the cell cultivation chip of TCPS (promptly not inserting the tissue culture polyethylene pan of any base material, as the control group) cell attaching layer base material is cultivated 35 days down;
Fig. 5 is the growth situation of neural stem cell after gallium nitride chip is cultivated 30 days;
Fig. 6 A is the phosphorylation degree of Akt that is incubated at the PC12 cell of different cell attaching layer base materials; Fig. 6 B is the phosphorylation degree of ERK that is incubated at the PC12 cell of different cell attaching layer base materials;
Fig. 7 A is the structural perspective of neural network chip of the present invention;
Fig. 7 B is the structure vertical view of neural network chip of the present invention.
Embodiment
The present invention is described in further detail below in conjunction with the drawings and the specific embodiments.
The cultivation assessment of embodiment one cell on III-V group-III nitride cell attaching layer
In the present embodiment, be neurone to be incubated at one have on the cell cultivation chip of III-V group-III nitride cell attaching layer, with of the influence of assessment III-V group-III nitride cell attaching layer for cell attaching, growth and differentiation.
(1) preparation of cell cultivation chip
As shown in Figure 1, it is cell cultivation chip of the present invention (1), comprises: a substrate (11); And the cell attaching layer (12) of a tool III-V group-III nitride film, be formed at a surface of this substrate, to provide cell to attach and the place of growth.Wherein, this substrate (11) is for being selected from sapphire (sapphire, Al 2O 3), silicon carbide, spinel (spinel, MgAl 2O 4One of) and the group that forms of gallium arsenide; This III-V group-III nitride film (12) is to be selected from one of group that aluminium nitride, gan and indium nitride form, with long-pending method (the metalorganic chemical vapor deposition in organometallic chemistry gas phase Shen, MOCVD), molecular beam epitaxy method (molecular beam epitaxy, MBE), or the hydride gas phase is built brilliant method, and (hydride vaporphase epitaxy HVPE) grows up in a surface of this substrate (11).In addition, this cell cultivation chip (1) more can comprise a buffer layer (13), be located between this substrate (11) and this cell attaching layer (12), to improve between this III-V group-III nitride film cell attaching layer (12) and this substrate (11) that lattice does not match and problem such as thermal expansion coefficient difference; Wherein, this buffer layer (13) can be aluminium nitride or gan.
Illustrate, but be not limited to, the cell cultivation chip of a preferred embodiment of the present invention (1) utilizes organometallic chemistry gas phase lamination method that gallium nitride film (12) is grown up on a sapphire substrate (11).Before the Yu Leijing, this sapphire substrate (11) need carry out the surface cleaning process in advance, to remove the grease and the zone of oxidation on this substrate (11) surface.In present embodiment, utilizing a shunting horizontal reactor (separate-flow horizontal reactor) to prepare this gan cell cultivation chip (1) (sees for details, Kuwan N, Tsukamoto K, Taki W, Horibuchi K.Gradual tilting of crystallographic orientationand configuration of dislocations in GaN selectively grown by vapour phase epitaxy methods.JElectron Microsc (Tokyo) .2000; 49:331-8.).Its principal reaction thing source system separates with quartz plate, import flow respectively and be the 60mmol/min trimethyl-gallium (trimethylgallium, TMGa) and the 5000cc/min ammonia supreme dirty, with source as gallium and nitrogen.At first, sapphire substrate (11) temperature is located under 525 ℃, the thickness of growing up is
Figure A20061013872900061
The gan buffer layer, this gan buffer layer is a nucleating layer; Then, this substrate (11) temperature is increased to 1000 ℃ after, grow up a gan epitaxial layer on this gan buffer layer, make the cell cultivation chip (1) (hereinafter to be referred as U type gan cell cultivation chip) of a tool U type gan cell attaching layer (12).And the preparation of the cell cultivation chip (1) (hereinafter to be referred as the n type gallium nitride cell cultivation chip) of tool n type gallium nitride cell attaching layer (12), then be after making this U type gan cell cultivation chip (1), with temperature increase to 1130 ℃, go up in the gallium nitride film (12) of this U type gan cell cultivation chip (1) and to feed silicomethane (SiH 4) gas, reaction generates silicon and is doped into gallium nitride film top layer (12), wherein the silicon of this silicomethane gases not the ear flow velocity between between 0.43~0.65nM/min; As for the cell cultivation chip (1) (hereinafter to be referred as P type gan cell cultivation chip) of tool P type gan cell attaching layer (12), lie in this U type gan cell cultivation chip (1) surface and feed two luxuriant magnesium ((C 5H 5) 2Mg, Cp 2Mg) gas, reaction generates magnesium and is doped into this gallium nitride film layer (12) surface.
Cell cultivation chip of the present invention (1) illustrates, but is not limited to, applicable to the isocellular cultivation of neurocyte, muscle cell, myocardial cell and neural stem cell.
(2) pre-treatment of cell cultivation chip
Before culturing cell, this culturing cell chip (1) must carry out pre-treatment earlier: at first, the chip that this is to be tested is cut into 1cm 2Size, with 70% alcohol wash; Then sterilize, carry out rinse with a large amount of phosphate buffer solution (PBS) again with the high compressed steam pot.This cell cultivation chip (1) that sterilization is finished is inserted in the tissue culture polyethylene pan (TCPS plate, available from corning, USA New York) of 24 holes standby.
(3) cultivation of neurocyte
This neuronal cell line is taken from the cerebellar granule shape neurone (cerebellum granule neurons) of 7 the biggest Wei Si rat (Wistar rat) cerebellar cortexs.In trypsinase and deoxyribonuclease (deoxyribonuclease, DNase) solution exists down, by the mechanical type crumbling method neurone is separated in cerebellum; Then this neurone is inoculated in one and has inserted on the 24 hole culture plates of cell cultivation chip to be measured and carry out cell cultures, the cell density of inoculating in this culture plate is 1 * 10 6Cells/well, and add one and replenish the BME substratum (BasalMedium Eagle) of 10% foetal calf serum, 25mM KCl, penicillin G and Streptomycin sulphate, and be incubated at 37 ℃, 95% air/5%CO 2Atmospheric moisture under.Inoculating one day after, in this culture plate, adding the Arabic candy (cytosine arabinoside) of cytosine(Cyt) of 10 μ M, to avoid duplicating of non-neuronal cell.Relevant treatment step is referring to Levi G, et al.Autoradiographic localization and depolarization-inducedrelease of acidic amino acids in differentiating cerebellar granule neurons J.Biomed Mater Res2000; 52:748-53.
(4) neurone is in the assessment of the growth situation at cell cultures initial stage
In present embodiment, this neurone is inoculated in one inserts respectively in the 24 hole culture plates of the cell cultivation chip (1) with different cell attaching layer base materials and cultivates, the cell cultivation chip (1) of in this 24 hole culture plate, being inserted wherein, the base material of this cell attaching layer (12) is respectively U-type gan, P-type gan, N-type gan, U-type silicon and TCPS (TCPS that does not insert chip cultivates hole, as the control group).Before the observation of cell kenel, wash the cell that is attached on the chip with PBS earlier, then under 4 ℃ of environment, with 2.5% glutaraldehyde (glutaraldehyde, GTA) PBS fixed sample 1 hour is again with PBS flushing sample, and with after the AG ethanol drying, utilize metaloscope (Olympus BX51M, Japan) analysis.
Table 1 is that this cerebellar granule neuron is cultivated attaching density and aixs cylinder and the dendron growth situation after the 3rd, 6,12 day in culture plate; Its demonstration is incubated at this gan cell cultivation chip (1) surface cerebellar granule neuron after 3 days and presents good attaching situation, and can see the growth of neuronic aixs cylinder and dendron; When cell cultures in this silicon surface or when directly being incubated at this TCPS, clustering phenomena appears in neurone, there is no to produce the intensive nerve net that is presented as this gallium nitride chip surface.After cerebellar neuron is cultivated 6 days (please cooperate shown in Figure 2), the cerebellar granule neuron that is incubated at this gan cell cultivation chip (1) surface attaches number is not had obvious change, but the trend that the number of aixs cylinder and dendron is significantly increased; And be incubated at the cerebellar granule neuron number on this silicon surface and the number of aixs cylinder and dendron all significantly reduces.After cerebellar neuron is cultivated 12 days, the cerebellar granule neuron that is incubated at this gan cell cultivation chip (1) surface attaches number is not had obvious change, and slightly present the accumulative phenomenon, and the number of aixs cylinder and dendron has minimizing trend, this phenomenon may be because along with the increase of cultivating fate, nutritional factor contained inside the substratum is inadequate, and the cell tendency is assembled the purpose that reaches survival mutually; And the little brain cell that is incubated at this silicon surface or directly is incubated at this TCPS remains little.
Table 1 neurocyte is in the attaching density of different number of days and the growth situation of aixs cylinder and dendron
Figure A20061013872900081
* * * * is more, and * * * * is many, and * * * is common, and * * is few, and * is less
(5) neurone is in the remaining assessment at cell cultures initial stage
Because lactic acid dehydrogenase (LDH) is a stable tenuigenin ferment and is present in central neurone, therefore, the remaining of neuronal cell can be released into extracellular LDH from viable cell and assess by measuring.In present embodiment, be to be exposed to one and to contain in the new cultivation hole of 0.2 milliliter of Triton X-100 30 minutes, to destroy cytolemma with being incubated at viable cell in the cell cultivation chip (1) of different cell attaching layers (12) base material.Then, carry out quantitative assay, with as the remaining index of neurone by measuring the LDH that is released into substratum from neurone.
Fig. 3 shows a neuronic relatively remaining situation, is to measure from being incubated at the cell cultivation chip (1) of different cell attaching layers (12) base material to being incubated at the LDH ratio that neurone discharged of TCPS.By among the figure as can be known, cultivate neurone on this silicon surface with respect to the neurone of simple cultivation in this TCPS, the relative survival rate after 3 and 6 days only has 74.5 ± 15.5% and 33.1 ± 0.76% respectively; And be incubated on this gan cell cultivation chip (1) neurone with compare down at the neurone of TCPS, its value all surpasses or near 200%.Show that by the result compare down with this silicon, this gan cell cultivation chip (1) that the present invention took off can obviously improve the neurone survival rate, reduce the neuronal death rate.
(6) the neurone vast of heaven phase is cultivated assessment
Fig. 4 is shown as the growth situation of this cerebellar granule neuron after the cell cultivation chip of different cell attaching layer base materials is cultivated 35 days down, (a) gan, (b) are poly-from propylhomoserin (promptly poly-from propylhomoserin in this TCPS surface coated), reach (c) TCPS (promptly not inserting the tissue culture polyethylene pan of any base material) as the control group; Wherein, the culture condition of this cerebellar granule neuron as previously mentioned.Show among the figure that neurone is incubated at the differentiation situation of the cell count of this gan cell attaching layer and aixs cylinder, dendron far above being incubated at poly-neurone from propylhomoserin and TCPS cell attaching layer.By its result as can be known, the cell cultivation chip that the present invention took off (1) helps cell survival, growth and the differentiation of vast of heaven phase cell cultures.
(7) the growth situation of neural stem cell vast of heaven phase cultivation
Neural stem cell system in the present embodiment takes from conceived female mouse, places this gan cell cultivation chip (1) to cultivate the neural stem cell that obtains, the similar aforesaid cerebellar granule neuron of the culture condition of this neuronal stem cell.Fig. 5 is shown as the cultivation situation of this neural stem cell after gan cell cultivation chip (1) is cultivated 30 days, as shown in the figure, this neural stem cell is after this gan cell cultivation chip (1) is gone up through 30 days cultivation, have good attaching, and this neuronal stem cell and grow tangible nerve net.Show by the result, this gan cell cultivation chip (1) but the attaching and the growth of induced nerve stem cells.
(8) cultivation of pheochromocytoma (PC12) cell assessment
PC12 cell sample system separates from rat adrenal medullary cell knurl (adrenal pheochromocytoma).Wherein, this PC12 clone is with reference to the described culture condition of Neurotoxicology and Teratology 26 (2004) 397-406.At first, with the PC12 cell cultures in the tissue culture flasks of the DMEM substratum that contains 7.5% heat-inactivated fetal bovine serum (heat-inactivated fetal bovine serum), 7.5% horse serum, 2mM HEPES buffered soln and 44mM sodium bicarbonate, culture environment is maintained at 37 ℃, 95% air/5%CO 2Atmospheric moisture under.After waiting to cultivate 3 days, the PC12 cell is moved to the TCPS culture plate of one 24 holes, be incubated in the substratum of a DMEM/F12; After 2 hours cultivation, this substratum replaces with the serum-free DMEM/F12 that adds 50ng/ml NGF (nerve growth factor) and 0.25%BSA (bovine serum albumin).After cultivating 1 day, utilize west ink dot method to analyze the serine-threonine kinase (serine-threoninekinase of PC12 cell, Akt), extracellular information is regulated kinases (extracellular signal-regulated kinase, phosphorylation degree ERK).Fig. 6 is incubated at the Akt of PC12 cell of different cell attaching layer base materials and the phosphorylation degree of ERK; Wherein, cultivate the cultivation base material of being put in the hole in TCPS and be respectively C:TCPS (TCPS that does not insert chip cultivates hole, as the control group), A: cultivation hole surface coated is poly-from propylhomoserin, N:U-type gan, P:P-type gan.In the PC12 cell, measure when high when the Akt of phosphorylation (P-Akt) performance, can promote cell survival, suppress apoptosis; And measure when high when the ERK of phosphorylation (P-ERK) performance, can impel cell fission or differentiation.As scheme to show that the Akt and the ERK phosphorylation degree that are incubated on the gan cell cultures layer all reach poly-cell cultures layer from propylhomoserin much larger than being incubated at TCPS; Learn thus, when the cell attaching layer that the present invention took off (12) is induced the PC12 cytodifferentiation in nerve growth factor (NGF), help the survival of PC12 cell and be divided into the cell of outward appearance like sympathetic neuron.
Embodiment two neural network chips
Shown in Fig. 7 (A) and Fig. 7 (B), it is shown as the structural representation of the neural network chip (2) of another aspect of the present invention.It comprises: a substrate (21); One circuit layer (22) is the surface of being located at this substrate (21); And the cell attaching layer of an III-V group-III nitride (23), be the surface that is formed at this circuit layer (22), in order to the place that provides cell to attach and grow.Wherein, each limit of this circuit layer (22) and this cell attaching layer (23) below is respectively equipped with plurality of electrodes (221), and the plural wires (222) that is electrically connected with this electrode (221), in order to measure the variation situation of cell surface current potential.Such neural network chip (2) can comprise a cell cultures groove (24) in addition, places this circuit layer (22) surface, and be erected in this cell attaching layer (23) around.
In class nerve net chip of the present invention (2), wherein, this substrate (21) can be glass substrate or silicon substrate; This electrode (221) is selected from one of group that precious metals such as gold and silver, rhenium, ruthenium, rhodium, palladium, silver, osmium and iridium form; This plural wires can be metal or metal alloy such as the indium oxide, cadmium tin-oxide, antimony, chromium, silver, copper of indium tin oxide, tin-oxide, the doped zinc oxide of electroconductibility; This III-V group-III nitride film (23) is to be selected from one of group that aluminium nitride, gan and indium nitride form.
In sum, with cell cultures when the disclosed III-V group-III nitride cell attaching layer surface, attaching base material with other compares down, need not be coated with poly-ly can provide this cell good attaching effect from bioactive moleculess such as amino acids, and can promote the growth and the differentiation of cell, reduce cell mortality, can be used for neurocyte, neural stem cell, class neurocyte, muscle cell, reach in the isocellular cultivation of myocardial cell, the cell cultures in the vast of heaven phase also can make cell have a high viability, growth and differentiation.This cell attaching layer of the present invention can be applicable to the biochip that neural transplantation is used: the III-V group-III nitride cell attaching layer of neurocyte has been cultivated on the surface, be transplanted to central nervous system (CNS), to rebuild because of disease or the injured neurologic defect that is caused.This cell cultures layer of the present invention further can be in conjunction with other check and analysis system, as a) biology sensing chip: utilize neurocyte to stimulate responsive especially characteristic in some, can be used to detect the change of situation in the environment, as the change of gas concentration lwevel, ferment detection etc.; B) application of neural network: the environment that provides cell to grow by this cell attaching layer, and sensing array at the Noninvasive research of neural signal is provided, set up with the direct information of active somatic cell and get in touch, with the propagation of research brain function and neural signal; C) new drug screening chip: in order to the test active somatic cell to the reaction of novel drugs, can more accurate screening and the function of prediction new drug, and significantly shorten the time-histories of drug development.

Claims (8)

1. a biology sensing chip includes a cell attaching layer and a check and analysis system, and it is characterized in that: this cell attaching layer is an III-V group-III nitride, is used to provide the cell that will detect to attach and the place of growing.
2. biology sensing chip according to claim 1 is characterized in that: this biology sensing chip can be new drug screening chip, gives birth to doctor's sensing component or neural network chip.
3. biology sensing chip according to claim 2 is characterized in that: such neural network chip comprises:
One substrate;
One circuit layer is located at the surface of this substrate; And
The cell attaching layer of one III-V group-III nitride is formed at the surface of this circuit layer, in order to provide cell to attach and the place of growth.
4. biology sensing chip according to claim 3 is characterized in that: each limit of this circuit layer and this cell attaching layer below is respectively equipped with plurality of electrodes, and the plural wires that is electrically connected with this electrode.
5. according to claim 1 or 3 described biology sensing chips, it is characterized in that: this III-V group-III nitride is aluminium nitride, gan or indium nitride.
6. according to claim 1 or 3 described biology sensing chips, it is characterized in that: this cell can be neurocyte, neural stem cell, class neurocyte, muscle cell and myocardial cell.
7. according to claim 1 or 3 described biology sensing chips, it is characterized in that: this chip also comprises a cell culture apparatus, and the cell cultures layer that is positioned on this chip is arranged on this cell culture apparatus.
8. biology sensing chip according to claim 1 is characterized in that: this sensing analytical system is to be used to detect the cellular sensitivity stimulator.
CNA2006101387290A 2006-11-14 2006-11-14 Biology sensing chip with III-V groups nitrifier cell attaching layer Pending CN101182566A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107073171A (en) * 2014-09-10 2017-08-18 卢森堡科学技术研究院 The implantable device and production method adhered to selecting cell

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107073171A (en) * 2014-09-10 2017-08-18 卢森堡科学技术研究院 The implantable device and production method adhered to selecting cell
CN107073171B (en) * 2014-09-10 2020-06-19 卢森堡科学技术研究院 Implantable devices with selective cell adhesion and methods of production

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