CN101176340A - Projection device - Google Patents

Projection device Download PDF

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Publication number
CN101176340A
CN101176340A CNA2006800165582A CN200680016558A CN101176340A CN 101176340 A CN101176340 A CN 101176340A CN A2006800165582 A CNA2006800165582 A CN A2006800165582A CN 200680016558 A CN200680016558 A CN 200680016558A CN 101176340 A CN101176340 A CN 101176340A
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China
Prior art keywords
light
emitting diode
backlight unit
diode chip
optical element
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CNA2006800165582A
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CN100571353C (en
Inventor
格哈德·库恩
约瑟夫·许特纳
马里奥·万宁格
乔治·伯格纳
莫里茨·恩格尔
帕特里克·克罗莫蒂斯
斯特凡·格勒奇
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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Abstract

The invention specifies a projection device having a light modulator which has a light reception region with a cross-sectional area to be illuminated having the size AM and with a maximum acceptance angle for incident light, and having at least one light source, by means of which, during its operation, a cone of light is produced for illuminating the cross-sectional area of the light reception region and which has a number N of luminescence diode chips having a maximum emission angle. At least one of the luminescence diode chips has a radiation output area having the size AD. The following relationship applies: 0.7X(AM X sin<2>(a ))/(AD X sin<2>(ss ) X n<2>) = N = 1.3X(AM X sin<2>(a))/(AD X sin<2>( ss) X n<2>), where n is equal to 1 or equal to the refractive index of a coupling medium with which the luminescence diode chips are provided.

Description

Projector equipment
The present invention relates to a kind of projector equipment, it has optical modulator and at least one light source, and this light source has light-emitting diode chip for backlight unit.
The application requires the priority of German patent application 10 2,005 022 357.5 and 10 2,005 031 336.1, and its corresponding disclosure is incorporated herein by reference.
In projector equipment, the brightness of the image of institute's projection is particularly important.In order to produce high as far as possible brightness, the light source that is used for the projector equipment of aforementioned type is equipped with light-emitting diode chip for backlight unit as much as possible at present usually.
Task of the present invention provides a kind of projector equipment of aforementioned type, and this projector equipment is compared with traditional projector equipment has higher efficient aspect the generation of brightness.
This task solves according to claim 1 or projector equipment according to claim 2 by a kind of.Favourable improvement project and preferred implementing form are the themes of dependent claims.
Under the situation of the characteristic of considering optical modulator, select the quantity N of light-emitting diode chip for backlight unit.Surprisingly, find only to utilize the light-emitting diode chip for backlight unit of smallest number of comparing with traditional projector equipment, just can be with optimum efficiency generation high brightness in projector equipment.
When determining the optimal number N of light-emitting diode chip for backlight unit, especially considered the big or small A that waits to illuminate cross section of the optical receiving region of optical modulator MAnd this optical receiving region is to the maximum acceptance angle α of incident light.The maximum acceptance angle α of optical receiving region be at incide light on the optical modulator, be the set maximum incident angle of optical modulator.
In addition, when determining the quantity N of light-emitting diode chip for backlight unit, considered the big or small A of the radiation coupling output face of light-emitting diode chip for backlight unit DAnd the greatest irradiation angle β of light-emitting diode chip for backlight unit.Replacedly, also can use the only radiation coupling output face A of a light-emitting diode chip for backlight unit DWith greatest irradiation angle β, promptly at least one light-emitting diode chip for backlight unit has the big or small A that is DRadiation coupling output face.The radiation coupling output face of light-emitting diode chip for backlight unit is by its outer surface from light-emitting diode chip for backlight unit coupling output electromagnetic radiation.Greatest irradiation angle β measures with respect to the main radiation direction of light-emitting diode chip for backlight unit, and is such angle: still export effective electromagnetic radiation intensity from the light-emitting diode chip for backlight unit coupling under this angle.
In projector equipment, be provided with at least one optical element in the light path between light-emitting diode chip for backlight unit and optical modulator.
For the quantity N of light-emitting diode chip for backlight unit, be suitable for following formula:
0,7*(A M*sin 2(α))/(A D*sin 2(β)*n 2)≤N≤1,3*(A M*sin 2(α))/(A D*sin 2(β)*n 2)，
Wherein the value of n depends on that the radiation of exporting from the light-emitting diode chip for backlight unit coupling is subjected to the attachment device effect.In other words, the probable value of light-emitting diode chip for backlight unit quantity N is by by (A M* sin 2(α)) with (A D* sin 2(β) * n 2) merchant that constitutes determine and maximum above or be lower than this merchant 30%.According to first form of implementation, n=1.Replacedly, n equals the material refractive index of couplant, and wherein the radiation of light-emitting diode chip for backlight unit coupling output face is provided with this couplant, and this will be set forth below in more detail.
According to a kind of form of implementation, there is the gap in the light path between light-emitting diode chip for backlight unit and optical element, this gap is filled with gas.In addition, the radiation of light-emitting diode chip for backlight unit coupling output face A DThere is not couplant.Under these circumstances, n=1.
In conjunction with the present invention, couplant is interpreted as a kind of medium, compares with exposed light-emitting diode chip for backlight unit, by this medium the radiation coupling output from light-emitting diode chip for backlight unit is affected significantly.Especially the radiation coupling output face A that works as light-emitting diode chip for backlight unit DWhen not having encapsulating material (as mould material), situation is like this.Encapsulating material is interpreted as a kind of material, and it is suitable for encapsulating or seal light-emitting diode chip for backlight unit in known manner, makes it avoid external action.
As radiation coupling output face A DEncapsulating material is set by this way, make from the radiation coupling output of light-emitting diode chip for backlight unit only with the degree that is enough to ignore when influenced by this encapsulating material, light-emitting diode chip for backlight unit does not have couplant yet.Especially radiation coupling output face A DOn encapsulating material when having 0.2 times of ultimate range on the chip limit opposite each other that is less than or equal to light-emitting diode chip for backlight unit, situation is like this.In having the light-emitting diode chip for backlight unit of square basic configuration, the maximum transversal distance equals the chip length of side.In having the light-emitting diode chip for backlight unit of rectangular basic shape, this statement is corresponding to the length on longer chip limit.Usually, maximum transversal extends on the meaning of the present invention ultimate range corresponding to chip limit opposite each other.Especially, have refractive index greater than 1 the encapsulating material that is applied to plane layer basically at the couplant that should not be construed as under the above-mentioned precondition on the meaning of the present invention.Equally, air should not be construed as couplant basically.
According to a kind of interchangeable form of implementation, the radiation of light-emitting diode chip for backlight unit coupling output face A DBe provided with couplant.In the projector equipment according to this form of implementation, n equals the refractive index of coupling material.
Especially be coupled on the optical element with optical mode ground by coupling material when light-emitting diode chip for backlight unit, perhaps as the radiation output face A that is coupled DBe provided with coupling material, when feasible radiation coupling output from light-emitting diode chip for backlight unit was subjected to appreciable impact, when especially significantly improving, situation was like this.
In conjunction with the present invention, starting point is: even the radiation of light-emitting diode chip for backlight unit coupling output face A DBe provided with and have the coupling material of thickness greater than 0.2 times of the ultimate range on chip limit opposite each other, also can appreciable impact radiation coupling output.Coupling material for example also can be an encapsulating material.
Light-emitting diode chip for backlight unit preferably has the thin layer that has the active area of launching electromagnetic radiation, and this active area does not have growth substrates basically, and is provided with reflector in the side that deviates from primary radiation face.This is the key property of so-called thin-film light emitting diode chip, and these thin-film light emitting diode chips particularly preferably are contained in the projector equipment.
The especially following typical feature of the characteristic of thin-film light emitting diode chip:
-the epitaxial loayer sequence that produces radiation on first interarea of supporting member, apply or be configured with the reflector, at least a portion in the electromagnetic radiation that it will produce in the extension sequence of layer is advanced in the epitaxial loayer sequence to back reflective,
-epitaxial loayer sequence have scope in 20 μ m or littler thickness, especially scope at 10 μ m or littler thickness, and
-epitaxial loayer sequence comprises at least one semiconductor layer, semiconductor layer has at least one face, this mask has the mixing structure, the mixing structure causes approximate ergodic must distribute of light in the epitaxial loayer sequence of extension in the ideal case, and promptly the mixing structure has ergodic as far as possible random scatter characteristic.
For example at the Appl.Phys.Lett.63 that the people showed (16) such as I.Schnitzer on October 18th, 1993, described the basic principle of thin layer light-emitting diode chip for backlight unit in the 2174-2176 page or leaf, its disclosure at this point is incorporated herein by reference.
The thin-film light emitting diode chip good approximation is Lang Baite (lambert ' scher) surface radiator, and therefore is suitable for particularly well being applied in the light source of projector equipment.In conjunction with the present invention, suppose 90 ° greatest irradiation angle β in principle at thin-film light emitting diode chip.In thin-film light emitting diode chip, the radiant section of the side-emitted by thin layer is usually little as can to ignore, and for example it is usually less than 1% of whole emission, so also can ignore radiation coupling output face A in thin-film light emitting diode chip DOn the part of side.
According to a kind of favourable form of implementation of projector equipment, light-emitting diode chip for backlight unit is arranged to the matrix that x is capable and y is listed as, and wherein counts the probable value of x by (l M* sin (α)) with (l DThe merchant that * sin (β) * n) constitutes determines, and the probable value of number y is by (b M* sin (α)) with (b DThe merchant that * sin (β) * n) constitutes determines, and these values at most above or be lower than corresponding merchant 30%.At this, l MThe cross section A of the optical receiving region of expression optical modulator MLength, and b MThe cross section A of the optical receiving region of expression optical modulator MWidth, l DOr b DThe length or the width of the primary radiation face of the thin layer of expression light-emitting diode chip for backlight unit.
The desired value of the row and column by determining matrix is complementary the setting of light-emitting diode chip for backlight unit and the shape of optical receiving region, can also more effectively utilize the light by the light-emitting diode chip for backlight unit generation thus.
The probable value of number N or number x or y especially preferably equals round-up or round down arrives the merchant's of adjacent integer analog value.By such mode, can realize effectively utilizing as far as possible the light that produces by light-emitting diode chip for backlight unit.
Substitute quantification N, on meaning of the present invention, also can be scheduled to the quantification N of light-emitting diode chip for backlight unit, and make size or its radiation coupling output face A of light-emitting diode chip for backlight unit DPerhaps its length and width are matched with the value of determining according to above-mentioned formula.Therefore for example be suitable for following formula for radiation coupling output face:
0,7*(A M*sin 2(α))/(N*sin 2(β)*n 2)≤A D≤1,3*(A M*sin 2(α))/(N*sin 2(β)*n 2).
Nature, when all the other each amount when predetermined, the every other amount that is contained in the formula can correspondingly be determined.
The form of implementation favourable according to another kind, the probable value of quantity N or number x or y equal round-up or the round down corresponding merchant to neighbouring even-numbered.For example, when light-emitting diode chip for backlight unit was arranged to the even number group, even number N can be favourable.Preferably, in this case, after every group of light-emitting diode chip for backlight unit, be provided with special-purpose optical element.
According to a kind of particularly preferred form of implementation, the primary radiation mask of light-emitting diode chip for backlight unit has the shape of substantial rectangular.By such mode, the shape of light-emitting diode chip for backlight unit and/or the radiation of light-emitting diode chip for backlight unit coupling output face A DCan be matched with the shape or the profile of the optical receiving region of optical modulator better.This also helps utilizing better the light by light emitted.
Preferably, a plurality of light-emitting diode chip for backlight unit are assigned an optical element jointly.The situation that is assigned special-purpose optical element with each light-emitting diode chip for backlight unit is compared, and this for example has simplifies the advantage of installing.Additionally or replacedly, light-emitting diode chip for backlight unit is divided at least two groups, they are assigned special-purpose optical element respectively.
Conform with the destination, be respectively arranged with luminescence conversion element after at least a portion of light-emitting diode chip for backlight unit, the electromagnetic radiation of light-emitting diode chip for backlight unit being launched by this luminescence conversion element converts the electromagnetic radiation with the wavelength that changed at least in part to.For example when the light-emitting diode chip for backlight unit of emission blue light makes up with the luminescent substance of launching sodium yellow, utilize luminescence conversion element can produce the especially light of white.
Replacedly, after various light-emitting diode chip for backlight unit, preferably be provided with different luminescent conversion materials, the light of luminescent conversion material preferred emission different colours or the light in the different wavelength range.
Particularly preferably, each in the luminescent conversion material all has unique luminescent substance.Compare with the single luminescent conversion material that uses multiple luminescent substance to be mixed with each other therein, higher efficient in the time of being implemented in the electromagnetic radiation conversion because when using multiple luminescent substance, can be absorbed by second luminescent substance by the light of first luminescent substance emission again.On the other hand, be used to produce the luminescent substance of coloured light usually than only realizing wideer emission spectrum by use by light-emitting diode chip for backlight unit.In a word, utilize such solution can realize having the light of the color rendering of improvement.
Optical element is preferably constructed in the mode of the optical concentrator of non-imaging, compares with the common use of amplitude transformer, and this optical concentrator is provided for transmission in the opposite direction.By using at least one such optical element, can advantageously reduce dispersing with effective and efficient manner by the light of light emitted.
Particularly preferably be the as close as possible light-emitting diode chip for backlight unit of the light input end of optical concentrator at this.Conform with the destination, the solid angle of the light of launching from optical element diminishes by the as close as possible light-emitting diode chip for backlight unit of optical element ground, and the cross section of radiant cone is less there.Especially in the time high as far as possible radiation intensity will being projected on the as far as possible little face (as in projector equipment), this is essential.
At this, the important constant in the geometric optics system is optical extend (Etendue), i.e. photoconduction value (Lichtleitwert).It is the product of the solid angle of the area of light source and its radiation.Optical extend has been described the expansion of the light cone of any intensity.The conservation of optical extend particularly causes the light in diffusion radiation source (for example light-emitting diode chip for backlight unit) not reassociate, and promptly no longer can deflect on the face with littler expansion, and not consider loss.Go into to inject optical element so advantageously have as far as possible the light beam of small bore.
In a kind of form of implementation that conforms with purpose especially, light is collimated consumingly by optical element, be that dispersing of light reduced consumingly, make light launch with the radiant cone with a subtended angle from optical element, this subtended angle is less than or equal to the maximum acceptance angle α of the optical receiver scope of optical modulator.
According to a kind of favourable form of implementation, the subtended angle of radiant cone is less than or equal to 25 °, preferably is less than or equal to 20 °, particularly preferably is and is less than or equal to 15 °.
Optical concentrator is CPC type, CEC type or CHC type optical concentrator advantageously, thus at this or the following amplitude transformer that is generically and collectively referred to as, the reflective side walls of amplitude transformer is to small part and/or at least as much as possible have a parabolic focalizer (Compound ParabolicConcentrator of combined type, CPC), oval focalizer (the Compound EllipticConcentrator of combined type, CEC) and/or combined type hyperbola focalizer (Compound HyperbolicConcentrator, shape CHC).
Particularly preferably be, the reflecting surface of optical element partly or completely is configured to the scope of freedom, so that regulate required radiation characteristic best.In its basic configuration, optical element preferably is similar to CPC type, CEC type or CHC type at this.
Replacedly, amplitude transformer preferably has sidewall, and this sidewall links to each other the radiation input with the radiation output, and be configured to be distributed on the sidewall, the tieline between radiation input and radiation output extends basically as the crow flies.
At this, optical element conforms with the destination and has element body, and this element body limits cavity, and the inwall of cavity reflects the part spectral region by the light of light emitted at least.
Replacedly, optical element advantageously is configured to the type of dielectric amplitude transformer, and element body with complete shape, this element body has the dielectric material of suitable refractive index, and the light in feasible this optical element of coupling input is by the dieletric reflection around the court of the total reflection on the side interface of complete body.By utilizing total reflection, can farthest avoid the absorption of light at its reflex time.
Preferably, optical element has the radiation output of the boundary face that has similar lens bending.Can reduce dispersing of light as much as possible by such mode.
As the alternative to optical concentrator, optical element preferably is configured to optical conductor, and this optical conductor has constant cross section or has and becomes big cross section towards light output end and be used for mixed light.The cross section of optical element preferably has the polygonal shape of even number.Its outer surface conforms with the destination and is embodied as straightly, and has smooth sub-face, can guarantee the good mixing of light thus.When optical coupling different colours, that will be mixed into white was imported in the optical element, this enforcement of optical element was especially favourable.
Replacedly, this optical conductor that is used for mixed light is arranged on after the optical element of projector equipment in light path.
What conform with purpose is with as far as possible little each other distance a part of adjacent light-emitting diode chip for backlight unit or all adjacent light-emitting diodes to be set.This distance is preferably and is less than or equal to 300 μ m, especially preferably is less than or equal to 100 μ m and is greater than or equal to 0 μ m.Such measure is to realizing that in projector equipment high as far as possible radiation intensity is favourable.
Optical element preferably has the basic cross section of rectangle that is at the radiation outlet side.By such mode, in optical element, can form the cross section of light cone as follows, make it be matched with the cross section in the optical receiver zone of optical modulator to small part.
Additionally or replacedly, optical element has the first greatest irradiation angle along first plane and has the second greatest irradiation angle along second plane, the second greatest irradiation angle is different from the first greatest irradiation angle.In other words, with the following structure of optical element, make and launching from optical element under second maximum angular from the optical element emission with along second plane under first maximum angular along first plane by the light of radiation input incident.The main radiation direction that first and second planes especially are parallel to optical element distributes.Preferably, first and second planes are provided with being perpendicular to one another.This measure also can help realizing the coupling of light cone and optical modulator.
The first greatest irradiation angle is preferably between 10 ° to 13 ° (comprising two-end-point), and the second greatest irradiation angle is preferably between 13 ° to 18 ° (comprising two-end-point).
Other advantage, preferred implementing form and the improvement project that obtains projector equipment from the embodiment that sets forth below in conjunction with accompanying drawing 1 to 40 with and part.Wherein:
Fig. 1 shows the schematic structure of projector equipment with the cross section view according to first embodiment,
Fig. 2 shows the optical modulator of projector equipment shown in Fig. 1 with the vertical view of the optical receiving region of projector equipment,
Fig. 3 shows the schematic sectional view of light-emitting diode chip for backlight unit,
Fig. 4 shows the schematic sectional view according to the part of the light source of first embodiment and optical element,
Fig. 5 shows the schematic sectional view according to the part of the light source of second embodiment and optical element,
Fig. 6 shows the schematic sectional view according to the part of the light source of the 3rd embodiment and optical element,
Fig. 7 shows the schematic sectional view according to the part of the light source of the 4th embodiment and optical element,
Fig. 8 shows the schematic sectional view according to the part of the light source of the 5th embodiment and optical element,
Fig. 9 shows the schematic plan according to the setting of the light-emitting diode chip for backlight unit of the light source of first embodiment,
Figure 10 shows the schematic sectional view according to the light source of second embodiment,
Figure 11 shows the schematic sectional view according to the light source of the 3rd embodiment,
Figure 12 shows according to the light source of the 4th embodiment with according to the perspective schematic view of the optical element of first embodiment,
Figure 13 shows the perspective schematic view according to the optical element of second embodiment,
Figure 14 shows the perspective schematic view according to the optical element of the light source of the 5th embodiment and the 3rd embodiment,
Figure 15 shows according to the light source of the 6th embodiment with according to the perspective schematic view of the optical element of the 4th embodiment,
Figure 16 shows according to the light source of the 7th embodiment with according to the perspective schematic view of the optical element of the 5th embodiment,
Figure 17 shows the perspective schematic view according to the optical element of the 6th embodiment,
Figure 18 shows the perspective schematic view according to the 8th embodiment,
Figure 19 shows the perspective schematic view according to the light source of the 9th embodiment,
Figure 20 shows the perspective schematic view according to the light source of the tenth embodiment,
Figure 21 shows the perspective schematic view according to the light source of the 11 embodiment,
Figure 22 A shows the perspective schematic view according to the light source of the 12 embodiment,
Figure 22 B shows the vertical view of the light source shown in Figure 22 A,
Figure 23 shows according to the light source of the 13 embodiment with according to the perspective schematic view of the optical element of the 7th embodiment,
Figure 24 shows the perspective schematic view according to the light source of the 14 embodiment.
Figure 25 shows the perspective schematic view according to the light source of the 15 embodiment,
Figure 26 shows the perspective schematic view according to the light source of the 16 embodiment,
Figure 27 shows the perspective schematic view according to the light source of the 17 embodiment,
Figure 28 shows according to the light source of the 18 embodiment with according to the perspective schematic view of the optical element of the 8th embodiment,
Figure 29 shows the perspective schematic view according to the housing of the light source of first embodiment,
Figure 30 shows the perspective schematic view according to the housing of the light source of second embodiment,
Figure 31 shows the perspective schematic view according to the housing of the light source of the 3rd embodiment,
Figure 32 shows the perspective schematic view according to the housing of the light source of the 4th embodiment,
Figure 33 A shows the perspective schematic view according to the optical element of the 9th embodiment,
Figure 33 B shows the perspective schematic view according to the optical element of the tenth embodiment,
Figure 33 C shows according to the light source of the 19 embodiment with according to the perspective schematic view of the optical element of the 11 embodiment,
Figure 34 A shows the perspective schematic view according to the optical element of the 12 embodiment
Figure 34 B shows the perspective schematic view according to the optical element of the 13 embodiment,
Figure 34 C shows the perspective schematic view according to the optical element of the 14 embodiment,
Figure 34 D shows the perspective schematic view according to the optical element of the 15 embodiment,
Figure 35 shows according to the light source of the 20 embodiment with according to the perspective schematic view of the optical element of the 16 embodiment,
Figure 36 shows according to the light source of 21 embodiment with according to the perspective schematic view of the optical element of the 17 embodiment,
Figure 37 shows the perspective schematic view according to the optical element of the 18 embodiment,
Figure 38 shows the perspective schematic view according to the optical element of the 19 embodiment,
Figure 39 shows the perspective schematic view according to the optical element of the 20 embodiment,
Figure 40 show light intensity with measured behind the optical element shown in Figure 39 and in the light path behind the optical element shown in Figure 37, apart from the relevant curve chart of the distance of optical axial.
In these embodiment and accompanying drawing, identical or act on identical part and indicate identical reference marker respectively.Element shown in the accompanying drawing needn't be considered as meeting ratio, more precisely, and can be in order better to understand them by part expression large.
Projector equipment shown in Fig. 1 comprises light source 2, optical element 1 and optical modulator 3.Certainly, projector equipment 4 can also have various other elements, yet for clearly former thereby save.
Light source 2, optical element 1 and optical modulator are along the light path setting of projector equipment 4, and wherein light path needn't distribute point-blank, but for example can by steering component turn to arbitrarily and/or by beam splitter by the beam splitting of one or many ground.
Light source 2 has a plurality of light-emitting diode chip for backlight unit 21, wherein replacedly can use unique light-emitting diode chip for backlight unit 21, and this light-emitting diode chip for backlight unit has corresponding to the big like that together radiation coupling output face of a plurality of light-emitting diode chip for backlight unit.Light-emitting diode chip for backlight unit has greatest irradiation angle β, and wherein greatest irradiation angle β is preferably such angle: also launched light-emitting diode chip for backlight unit 21 at least 0.5% of its main radiation direction institute radiation emitted power in a direction under this angle.Light-emitting diode chip for backlight unit for example is a thin-film light emitting diode chip, has to the thin-film light emitting diode chip good approximation 90 ° greatest irradiation angle β.
Figure 3 illustrates the schematic sectional view of thin-film light emitting diode chip.It has thin layer 211, and this thin layer for example has the thickness that is less than or equal to 20 μ m, for example the thickness of 9 μ m.
On interarea, the whole basically ground of thin layer 211 is provided with reflector 216.Thin layer 211 is applied on the supporting member 215, makes reflector 216 towards this supporting member and for example near supporting member 215.Supporting member 215 for example is a support substrate.Alternatively, also possible is, support substrate 215 is not the part of light-emitting diode chip for backlight unit 21, but thin layer 211 is applied directly on the chip installed surface with the side that reflector 216 is applied on it, for example is applied on the chip installed surface of chip housing or other chip holder.
Thin layer comprises the semiconductor layer sequence, for example has the active area 213 and the p type doped region 214 of n type doped region 212, emission electromagnetic radiation.
In thin-film light emitting diode chip, under greater than 90 ° radiation angle, be transmitted in big or small basically insignificant radiation intensity on the meaning of the present invention.
Optical modulator 3 has optical receiving region 31, referring to Fig. 2.It for example is the micro mirror chip (Mikrospiegelchip) with a plurality of micro mirrors, and these micro mirrors can tilt around at least one axis independently of one another, and feasible inclination by mirror for example can lighten the single pixel for the treatment of the image of projection or dim.Optical receiving region is limited by micro mirror, and promptly its outline distributes along the outward flange of the micro mirror that is arranged on the micro mirror chip periphery.
As the replaceable scheme of micro mirror chip, optical modulator 3 for example also can be little LCD (Mikro-LCD-Display), and wherein light is not the inclination by little mirror but modulates by switching on and off filter.Another kind of possibility is to use the so-called LCOS (liquid crystal on silicon Liquid Crystal on Silicon) that is used for optical modulator.
Optical receiving region 31 for example has the cross section to be illuminated of rectangle, yet this cross section also can be foursquare or be shaped with any alternate manner.The rectangular cross section of optical receiving region 31 has the diagonal 32 that size for example is 0.5 inch or 0.8 inch, and wherein 1 inch corresponding to 25.4mm.Wait to illuminate the width of cross section and its length ratio as being 3: 4 or 9: 16.
The optical receiving region 31 of optical modulator 3 has maximum acceptance angle α, referring to Fig. 1.In the micro mirror chip, this angle for example departs from the maximum tiltable angle of plan position approach corresponding to micro mirror.This angle for example is+/-12 ° ,+/-14.5 ° or+/-15 °.The probable value of maximum acceptance angle for example (comprises two end points) between 10 ° to 20 °.
Being mapped to light on the optical receiving region 31 with the angle greater than maximum acceptance angle α can not be modulated or can not modulate in set mode.Therefore, importantly, reduce as wide as possible by the dispersing of the light cone 22 of light source 2 emission, make most of at least light to penetrate on the optical receiving region 31 of optical modulator 3 less than the angle of maximum acceptance angle α by optical element.Light cone 22 is for example to be less than or equal to 20 ° maximum angular γ from optical element 1 outgoing.Angle γ is for example 12 °.
For the quantity N of light-emitting diode chip for backlight unit 21, be suitable for following formula:
0,7*(A M*sin 2(α))/(A D*sin 2(β)*n 2)≤N≤1,3*(A M*sin 2(α))/(A D*sin 2(β)*n 2).
When the light-emitting diode chip for backlight unit 21 that uses definite size being set for light source 2, then can determine the probable value of the quantity N of light-emitting diode chip for backlight unit, utilize these light-emitting diode chip for backlight unit to effectively utilize as far as possible by the light-emitting diode chip for backlight unit radiation emitted according to this relational expression.Alternatively, quantity N that also can predetermined regularly light-emitting diode chip for backlight unit 21, and determine the possible size of the radiation coupling output face of the possible size of light-emitting diode chip for backlight unit or light-emitting diode chip for backlight unit 21 according to top relational expression.
In the superincumbent relational expression, n uses any value to depend on that the radiation coupling output of light-emitting diode chip for backlight unit is subjected to the related device effect.
If have the gap in the light path between light-emitting diode chip for backlight unit and optical element, and the radiation of light-emitting diode chip for backlight unit coupling output face A DThere is not couplant, then n=1.Figure 4 illustrates the example at this, light-emitting diode chip for backlight unit 21 (especially its radiation coupling output face) does not have encapsulating material or coupling material basically in the figure.
Encapsulating material or coupling material for example are interpreted as a kind of dielectric material, this dielectric material is transparent to light-emitting diode chip for backlight unit 21 radiation emitted, and have the corresponding refractive index of refractive index of the semi-conducting material of preferred and light-emitting diode chip for backlight unit 21, Fresnel loss and a total reflection on the feasible boundary face that has reduced significantly between semi-conducting material and the surrounding medium.
Fresnel loss is because there is index jump in the loss that the reflection on the boundary face causes on boundary face.Typical example is for example to incide optical element or the index jump between air and the electric dielectric material during from the optical element outgoing in electromagnetic radiation.
Between light-emitting diode chip for backlight unit 21 and optical element 1, there is gap 5, for example the air gap.
Replacedly, gap 5 also can be filled with other gas, and equally also possible be in gap 5, to be vacuum.
In the structure shown in Fig. 5, between optical element 1 and light-emitting diode chip for backlight unit 21, there is air gap 5 equally.Yet, different with the light-emitting diode chip for backlight unit 21 shown in Fig. 4, light-emitting diode chip for backlight unit shown in Fig. 5 is provided with encapsulating material 24, and especially light-emitting diode chip for backlight unit is packed fully and therefore avoid the infringement of external action (as moisture) by encapsulating material 24.Yet as long as have 0.2 times of thickness 241 of the maximum transversal stretching, extension that is less than or equal to light-emitting diode chip for backlight unit on the primary radiation face of light-emitting diode chip for backlight unit 21, this encapsulating material 24 just is not the coupling material on the meaning of the present invention.
In the rectangle light-emitting diode chip for backlight unit, a extending transversely of growing in the chip length of side of two levels corresponding to light-emitting diode chip for backlight unit.Usually, the ultimate range opposite each other, horizontally extending limit of light-emitting diode chip for backlight unit can be selected to stretch as the maximum transversal of light-emitting diode chip for backlight unit.
In the square light-emitting diode chip for backlight unit that has as the horizontal chip length of side of 1mm, as long as encapsulating material 24 is covering luminousing diode chip, especially its radiation coupling output face flatly basically, encapsulating material 24 just should not be construed as the couplant on the application's meaning.Particularly preferably be, encapsulating material 24 is implemented thinly as much as possible, and especially to be less than or equal to 200 μ m be favourable to thickness 241.Under such condition, encapsulating material 24 is not the couplant on the application's meaning.
On the contrary, if thickness greater than 200 μ m, then encapsulating material 24 can be considered couplant, this causes the value of n can be set up the refractive index that equals encapsulating material 24.
In Fig. 6 to 8, other example of couplant 6 has been described.In the embodiment shown in Fig. 6, couplant for example is made of coupling material, and light-emitting diode chip for backlight unit 21 is coupled on the dielectric element body of optical element 1 with optical mode by this coupling material.Coupling material for example is the glue of transmitted radiation, and the refractive index match of this glue perhaps is matched with the refractive index of the semi-conducting material of light-emitting diode chip for backlight unit 21 in the refractive index of the dielectric of optical element 1, perhaps between the refractive index of these two kinds of materials.Replace this glue, for example also can use the material of epoxy resin or similar lacquer.
The refractive index of coupling material 6 is preferably between the refractive index of the semi-conducting material of the refractive index of the dielectric of optical element 1 and light-emitting diode chip for backlight unit 21.Importantly, refractive index is significantly greater than 1.For example, a kind of coupling material is used to couplant, and the refractive index of this coupling material is preferably greater than 1.4 greater than 1.3.To this, for example can consider silicones.But other materials also are possible as liquid as couplant.For example glassware for drinking water has the refractive index greater than about 1.3 also to be suitable for as couplant basically.
In the embodiment shown in Fig. 7, couplant 6 is made up of coupling element, and these coupling elements are formed on the light-emitting diode chip for backlight unit 21.For example, the element of similar lens is applied on the primary radiation face of light-emitting diode chip for backlight unit 21, these elements for example are made of epoxy resin or the material that contains silicones, and improve from the radiation coupling output of light-emitting diode chip for backlight unit 21 and the radiation coupling input that enters the electromagnetic radiation of optical element 1 by their.
Aspect the optical extend that influences light-emitting diode chip for backlight unit radiation emitted awl, the element of the similar lens shown in Fig. 6 plays the effect that is similar to the couplant shown in Fig. 6.The element of similar lens is on-plane surface or the uneven cover layer that is used for light-emitting diode chip for backlight unit 21, and this cover layer is responsible for increasing the optical extend of light-emitting diode chip for backlight unit 21.The increase of optical extend be about similar lens element refractive index square.Thus, the effect of the element of similar lens is similar with reference to the described coupling material of Fig. 6 to the front.Yet difference is, when using uneven cover layer, under the tectal situation as using as shown in Fig. 7, in radiation during from the cover layer outgoing of injustice and extra Fresnel loss also occurred when radiation is incided the optical element.
In the embodiment shown in Fig. 8, couplant 6 is made up of the thin layer jointing material, by this jointing material, light-emitting diode chip for backlight unit 21 is directly installed on the light path of optical element 1 and with optical mode and is coupled on the optical element 1, with similar with reference to the embodiment that Fig. 6 set forth in the above.
0,7*(A M*sin 2(α))/(A D*sin 2(β)*n 2)≤N≤1,3*(A M*sin 2(α))/(A D*sin 2(β)*n 2)
The example that is used for determining number N, x and y has been described in following table.Optical receiving region has 12 ° maximum acceptance angle α respectively.Wherein used the film square light-emitting diode chip for backlight unit of the chip length of side of maximum emission angle β with 90 ° and 1mm.Light-emitting diode chip for backlight unit does not have couplant, and has the air gap between light-emitting diode chip for backlight unit and optical element, makes n=1.
Thin layer has the thickness of 10 μ m, makes its side produce 0.04mm 2Area.Yet less than 1% of whole radiation of light-emitting diode chip for backlight unit, so it can be ignored especially in the present example by these side-emitted.So, radiation coupling output face A DIn this example, be set to 1.0mm 2Alternatively, can consider the side of thin layer, make A DIn this example, should be 1.04mm 2Yet preferably ignore the side.
" Qu.N " represents (A M* sin 2(α))/(A D* sin 2(β) * n 2) the merchant, " Qu.x " represents (l M* sin (α))/(l D* merchant sin (β) * n), and " Qu.y " representative (b M* sin (α))/(b D* merchant sin (β) * n).
l M[mm] ?b M[mm] ?Qu.N ?Qu.x ?Qu.y ?N ?x ?y
?1. 10,16 ?7,62 ?3,35 ?1,58 ?2,11 ?4 ?2 ?2
?2. 11,10 ?6,23 ?2,98 ?1,29 ?2,3 ?3 ?1 ?3
?3. 16,26 ?12,19 ?8,57 ?2,53 ?3,38 ?9 ?3 ?3
?4. 16,26 ?12,19 ?8,57 ?2,53 ?3,38 ?6 ?2 ?3
?5. 17,71 ?9,96 ?7,63 ?2,07 ?3,68 ?6 ?2 ?3
?6. 17,71 ?9,96 ?7,63 ?2,07 ?3,68 ?8 ?2 ?4
In example 1 and 2, relate to 0.5 inch optical modulator, promptly the cross section diagonal of optical receiving region is 0.5 inch, wherein 1 inch equals 25.4mm.In example 1, the width of the cross section of optical receiving region is 3: 4 with the length ratio, and ratio is 9: 16 in example 2.Unexpectedly be, the quantity N of light-emitting diode chip for backlight unit obtains the only possible values territory of 3.22+/-30% in example 1, under the situation of considering length and width for N, 4 is suitable value, conform with the destination at x and y and elect 2 respectively as, promptly two to take advantage of two light-emitting diode chip for backlight unit matrix for example be effective on meaning of the present invention.
In example 2, N is obtained the possible range of 2.86+/-30%, this codomain has allowed the littler value of N.For example can use one to take advantage of three light-emitting diode chip for backlight unit matrix at this.
Relate separately to 0.8 inch optical modulator in example 3 to 6, wherein the width of the optical receiving region cross section in the example 3 and 4 and length have 3: 4 mutual ratio, and ratio is 9: 16 in example 5 and 6.
When quantity N is correspondingly calculated by the relational expression above the reference of the size of predetermined and light-emitting diode chip for backlight unit, can conform with the optimization of purpose especially to system.For example, be that 3: 4 and maximum acceptance angle are that 12 ° and the predetermined quantity of chip are 0.5 inch optical modulator of 4 for having breadth length ratio, obtain the chip length of side of 1.06mm and the chip hem width of 0.8mm, promptly have the chip of rectangular shape.In the predetermined quantity of light-emitting diode chip for backlight unit is that 6 and maximum acceptance angle are under 15 ° the situation, for example obtains the chip length of side and be 1.0mm in such optical modulator and the chip hem width is 0.875mm.
These examples are applicable to n=1 respectively, and promptly light-emitting diode chip for backlight unit does not have couplant.If light-emitting diode chip for backlight unit is provided with the couplant that refractive index is the material of n=2, it is one medium-sized that chip length of being calculated above then and width will only have only.Under these circumstances, use obviously littler light-emitting diode chip for backlight unit just more effective.
Below, (be A at the not uncared-for situation in the side of thin layer DEqual 1.04mm 2) draw table." Qu.N " obtains only small difference to value, yet this can not influence the result in this example, i.e. the selection possibility of N.
l M[mm] ?b M[mm] ?Qu.N ?Qu.x ?Qu.y ?N ?x ?y
?1. 10,16 ?7,62 ?3,22 ?1,58 ?2,11 ?4 ?2 ?2
?2. 11,10 ?6,23 ?2,86 ?1,29 ?2,3 ?3 ?1 ?3
?3. 16,26 ?12,19 ?8,24 ?2,53 ?3,38 ?9 ?3 ?3
?4. 16,26 ?12,19 ?8,24 ?2,53 ?3,38 ?6 ?2 ?3
?5. 17,71 ?9,96 ?7,33 ?2,07 ?3,68 ?6 ?2 ?3
?6. 17,71 ?9,96 ?7,33 ?2,07 ?3,68 ?8 ?2 ?4
Light source shown in Figure 10 comprises at least one light-emitting diode chip for backlight unit 21, and this light-emitting diode chip for backlight unit 21 is applied on the supporting mass 23.The supporting mass 23 of light source comprises chip holder 232, and (for example by welding) is equipped with light-emitting diode chip for backlight unit 21 on chip holder.Chip holder for example is made of the material of electric insulation, and this material preferably has high-termal conductivity.It for example has silicon, aluminium nitride, carborundum, boron nitride, oxidized silicon, diamond, plastics carbon fiber compound, vitreous carbon compound and/or the glass diamond particles compound in surface.
Chip holder 232 is applied on the substrate 231 of heat conduction.This substrate for example has the material of conduction or is made of this material.Possible material for example is copper, aluminium, magnesium and/or CMC (copper-molybdenum-copper-sequence of layer).The substrate 231 of heat conduction is as the heat abstractor of the heat that is produced when its work by light-emitting diode chip for backlight unit 21.Chip holder 232 is made of the good material of heat conduction, and preferably directly links to each other with the substrate 231 of heat conduction.
On chip holder 232, for example be configured with metallide (Metallisierungen), for example form chip contact-making surface and/or lead, be used to contact light-emitting diode chip for backlight unit 21 by this metallide.The electrical connection side of light-emitting diode chip for backlight unit 21 can link to each other with the line 231 of heat conduction conductively, makes it additionally play the effect of electrode.
Replacedly, the substrate of heat conduction is provided with electric insulation layer 239, is applied with thin layer of conductive material on this electric insulation layer again, and this material for example changes into lead by etching structure, referring to Figure 19,20,21.Preferably, electric insulation layer and thin conductive layer separate in a zone, and the light-emitting diode chip for backlight unit 21 that has chip holder in this zone directly is installed on the substrate of heat conduction.The heat radiation and the emission effciency of light-emitting diode chip for backlight unit have been significantly improved by such mode.Compare with the situation that chip holder is applied on the insulating barrier, can realize institute's radiation emitted intensity is improved 35%.Light source with this structure for example is illustrated respectively among Figure 19 to 21.
In the embodiment shown in Figure 11, light source comprises DCB supporting mass (direct copper bonding, DirectCopper Bonding).The DCB supporting mass comprises supporting mass core 233, and the supporting mass core is provided with the outer cover 234 of conduction.Outer cover 234 for example has copper or is made of copper.Supporting mass core 233 preferably is made of the materials of electric insulation, makes that the outer cover of conduction can be by structuring and can be configured as the lead that is used for light source 2 or is used for light-emitting diode chip for backlight unit 21 thus.
Supporting mass core 233 for example has materials A lN, Al 2O 3, in SiC, BN, diamond, glass fibre compound, plastic optical fibre compound, carbon fiber compound, the glass diamond compound one of at least, perhaps constitute by at least a in the above-mentioned material.The particularly preferred material of supporting mass core 233 is aluminium nitride and/or aluminium oxide.
In the structure shown in Figure 12, light source 2 is configured to light source module, and light source module has corresponding plug 25, makes light source 2 can be electrically connected in simple mode by corresponding plug.The supporting mass 23 of light source is for example constructed described with reference to Figure 11 as top.Outer cover material 234 is configured as electric lead 26, and light-emitting diode chip for backlight unit links to each other with corresponding plug 25 conductively by these leads.
In addition, the circuit of light source 2 comprises parts 27, and these parts provide the protection of the static discharge of light-emitting diode chip for backlight unit (esd protection).These parts 27 for example are the quick resistance of voltage, capacitor or diode.They for example link to each other with light-emitting diode chip for backlight unit parallel connection or reverse parallel connection ground (at the possible conducting direction of parts (for example diode)).In addition, the supporting mass 23 of light source 2 also comprises installing hole 28, and for example under the situation of using steady pin and respective fixation element, light source module can mechanically be installed simply by installing hole is technical.
On light-emitting diode chip for backlight unit, a plurality of optical elements 1 are arranged on the light source 2, and optical element is for example integrally constructed each other.Optical element 1 is configured to the CPC type and has element body 11, and element body is that each optical element 1 limits independent cavity, and the inwall of cavity reflects the radiation of light emitted.
Each light-emitting diode chip for backlight unit of light source 2 is for example all distributed to unique optical element 1.Optical element, have the radiation input port towards the radiation input of light-emitting diode chip for backlight unit, the side of radiation input port for example is less than or equal to 1.5 times of the respective horizontal length of side of light-emitting diode chip for backlight unit, preferably is less than or equal to 1.25 times of the length of side.If this little radiation input is positioned as close to the light-emitting diode chip for backlight unit setting, then can reduces by the dispersing of light-emitting diode chip for backlight unit radiation emitted, and produce radiant cone with high brightness with effective and efficient manner.
Replace each light-emitting diode chip for backlight unit to be assigned unique special-purpose optical element 1, also can be for a plurality of light-emitting diode chip for backlight unit 21 are provided with optical element 1, optical element 1 as shown in Figure 13.Optical element also can be configured to the CPC type and have element body 11, and element body limits the cavity of the inwall with reflection.For example be that six light-emitting diode chip for backlight unit 21 are provided with optical element 1.
In order to realize high as far as possible efficient, light-emitting diode chip for backlight unit 21 should be provided with as far as possible close to each otherly.Adjacent light-emitting diode chip for backlight unit 21 for example has the distance that is less than or equal to 50 μ m each other.Particularly preferably, adjacent light-emitting diode chip for backlight unit does not have spacing each other basically.
The radiation input of optical element 1 and radiation output for example have rectangular shape respectively.Replacedly, the radiation input for example also can have square basically cross section.If want to utilize this optical element for a plurality of light-emitting diode chip for backlight unit settings, to realize that picture utilizes a plurality of identical reductions of dispersing the optical element of unique chip of distributing to respectively, then this optical element must have than the obvious bigger length of a plurality of optical elements.
When the light cone by optical element 1 emission will have maximum subtended angle θ, then this required the optical element of similar amplitude transformer structure to have certain minimum length all the time, and this minimum length is associated with the corresponding stretching, extension of radiation input.Desirable compact parabola amplitude transformer is suitable for following formula:
l＝a/2(1+sin?e)*cos(e)/sin 2(e)
Wherein l is the minimum length of optical element 1.To 15 ° maximum subtended angle, the length of optical element 1 for example is necessary for 9 times of length of radiation input.For about 9 ° maximum subtended angle, this factor is about 23, and 20 ° subtended angle is needed 5.5 times length.According to the concrete form of implementation of amplitude transformer, minimum length 1 replacedly also can be considered as optimum length, wherein especially also can be lower than this minimum length, for example is lower than 10% or 20%.
Therefore, the light input end of optical element 1 is more little, and then optical element also can be more little along the length of its optical axis, so that realize the greatest irradiation angle of determining to the light cone of being launched.On the contrary, be provided with if optical element is a plurality of light-emitting diode chip for backlight unit, if also promptly it has corresponding bigger radiation input, then the installation of optical element is comparatively inessential with respect to light-emitting diode chip for backlight unit.Particularly preferably, at least two optical elements of each light source setting, they correspondingly are assigned a plurality of light-emitting diode chip for backlight unit.
Optical element preferably has the cross section of substantial rectangular on the side of radiation output.By such mode, the cross section of light cone can be formed in the optical element in this wise, makes cross section to the cross section of the optical receiving region of small part and optical modulator be complementary.
According to a kind of form of implementation, optical element has the radiation input of band square cross section.This is that square arrangement at light-emitting diode chip for backlight unit 23 is provided with, as its for example respectively as shown in Figure 24 to 27, have 2 * 2 the light-emitting diode chip for backlight unit.Interchangeable is that the cross section of radiation input for example also can be a rectangle.
Additionally or replacedly, optical element has for example 11.5 ° the first greatest irradiation angle along first plane, and have for example 15.5 ° the second greatest irradiation angle along second plane.For this reason, distolateral in radiation input, square cross section can for example carry out the transition to rectangular cross section in the process of radiation output trend, and rectangular cross section for example has 10 stretching, extensions of taking advantage of 7.5mm.Especially, the first couple of optical element reflecting surface opposite each other has than second pair of curve that reflecting surface opposite each other is more precipitous at this.For example, the optical element among Figure 16 or shown in Figure 33 B 1 is configured to such type.
As the alternative of the amplitude transformer of CPC type, optical element 1 for example has sidewall, and sidewall extends to the radiation output from the radiation input with straight line.The example of this class optical element 1 is illustrated among Figure 15,28,33C and the 34D.
Relate to dielectric amplitude transformer with truncated cone-shaped basic configuration or the amplitude transformer with element body 11, element body defines corresponding cavity.In this class amplitude transformer, the radiation output preferably is provided with spherical or non-sphere lens, and is perhaps outwardly-bent in this lens-like mode.
Compare with spherical bending, non-spherical crooked advantage right and wrong are spherical crookedly for example to be increased along with the distance of the optical axis of distance optical element 1 and reduces.By such mode, the situation below having considered: it disperses the radiant cone that can be reduced by optical element 1 is not the light-emitting diode chip for backlight unit of point-like, but has the radiation source of certain stretching, extension.
This optical element is compared with CPC type optical element has following advantage: utilize it can reduce dispersing of radiant cone similarly, significantly reduce the total height of optical element 1 simultaneously.Another advantage of this class optical element is that its straight side can be made by method for injection compression molding, for example injection moulding or die casting more easily, is the comparison difficulty and construct crooked side (as in the CPC type amplitude transformer).
Be configured to have at optical element 1 under the situation of cavity reflector of element body 11, be fixed on the light source 2 or by element body 11 and locate with respect to light source 2.
Wherein the optical element embodiment that is configured to the cavity reflector is illustrated among Figure 12,13,33B, 34B and the 34C.
On the contrary,, then usually need extra fixture, so that be positioned at optical element 1 on the light source 2 or with respect to light source 2 location if optical element 1 is configured to dielectric amplitude transformer type.The example of the optical element of constructing in dielectric amplitude transformer mode is illustrated among Figure 14 to 17,23,28,33A, 33C, 34A and the 34D.
Figure 23,28 and 14 has holding element 12 to the optical element shown in 16, holding element extends from dielectric element body 13 near the radiation output of one or more optical elements 1, and side direction is outstanding and extend at the radiation input direction with element body 13 compartment of terrains from element body.
Holding element 12 for example can comprise shaped element, and optical element is located on the shaped element and therefore can be with respect to light source 2 location, for example referring to Figure 15 and 16.Replacedly, holding element 12 also can have the support of wall shape, and support is to small part flanked optical element, referring to for example Figure 14 and 23.
As the alternative of holding element 12, optical element 1 also can be installed and locatees by independent holding device.For example it can insert in the independent framework.
Light-emitting diode chip for backlight unit for example is installed in the chip housing 235, as it exemplarily is illustrated among Figure 29 to 32.Chip housing 235 for example is installed on supporting mass 23 and the light source 2, and perhaps they itself have constituted light source 2, and this light source can contact and emission electromagnetic radiation when work conductively.The example that one or more chip housing 235 is installed in the light source 2 on the supporting mass 23 is illustrated among Figure 18 to 28.
Chip housing 235 comprises chip holder 232 and case frame 236.Chip holder 232 has metallide, and metallide forms at least one (preferably a plurality of) chip join domain 237 and electric lead 238.Therefore on two sides opposite each other, chip holder 232 does not have frame material, makes lead 238 can insert these positions and can contact conductively.
Chip housing 235 is monolithically formed, and makes case frame 236 and chip holder 232 be configured as the part of individual layer.For example with ceramic material as under the situation of chip case material, if also at ceramic material by roasting and therefore before the sclerosis, framework 236 is arranged on the chip holder 232, then above-mentioned situation is possible.In roasting process subsequently, framework 236 is connected to become common part with chip holder 232.This can push auxiliary by make these two parts under the state of not roasting each other.
Replacedly, chip holder 232 and framework 236 are constructed respectively individually.Case frame 236 for example is bonded on the chip holder 232 under these circumstances.
Chip holder 232 and/or case frame 236 for example have aluminium nitride, aluminium oxide, glass ceramics, glass and/or metal.Framework can be constituted or had such plastics by plastics: these plastics have the material coefficient of thermal expansion coefficient of similar chip holder 232, and preferably apply with reflecting good material.In principle, framework is preferred or come painted or apply with the material of white or other reflection with white.
Chip contact area 237 and lead 238 for example for example are made of gold plating metal coating.The chip housing that for example is illustrated in Figure 29 and 32 is exactly this situation.
Chip housing 235 shown in Figure 30 has chip contact area 237, and the chip contact area is made of scolder.For example the chip contact area is limited by a plurality of little solder bumps respectively.
Lead 238 for example has aluminium, perhaps is made of aluminium.Such advantage is that aluminium plays the effect of welding breakpoint (Lotstopp) to the scolder of chip contact area 237.
Chip housing 235 shown in Figure 31 has the lead 238 that has a plurality of sections, and these sections are made of different materials.For example have aluminium for first section 2381, aluminium can play the effect of welding breakpoint, and second section 2382 have another kind of metal, for example gold.For example can reduce risk of short-circuits by first section 2381.In addition, the welding breakpoint can be avoided soaking lead and for example damaging or the dissolve gold contactant at this for scolder that light-emitting diode chip for backlight unit is provided with is installed.
Case frame is well-suited for the light-emitting diode that is installed in the chip housing 235 filler is set.To this, the interior zone of chi frame is for example partially filled at least filler.Filler is used for encapsulation LED chip 21 on the one hand, and therefore protects it to avoid external action.Yet additionally or replacedly, this material also can make filler form luminescence conversion element as the basis material of one or more luminescent substances.Replacedly, the luminescence conversion element in the thin layer is applied directly in the radiation coupling output face of light-emitting diode chip for backlight unit.
Preferably, the different light-emitting diode chip for backlight unit of light source are provided with different luminescence conversion elements, and promptly luminescence conversion element has different luminescent substances or luminescent substance mixture.For example in four light-emitting diode chip for backlight unit 21 is provided with the luminescent substance of emission blue light, luminescent substance and two luminescent substances that are provided with transmitting green light that are provided with the emission red light, wherein the luminescent substance of transmitting green light can be identical luminescent substance.
The luminescent substance that replaces the emission blue light also can use the light-emitting diode of launching blue light, and light-emitting diode is not provided with the luminescent conversion material.
Under the situation of using luminescent substance, can use light-emitting diode chip for backlight unit, light-emitting diode chip for backlight unit emission electromagnetic radiation, the wavelength of electromagnetic radiation is at least partially in outside the visible spectrum.For example, light-emitting diode chip for backlight unit is based on AlInGaN and the electromagnetic radiation in its work time emission ultraviolet region.
All all are suitable for luminescence conversion element to disclosed transducer in LED uses.This class is suitable for as the example of the luminescent substance of transducer and luminescent substance mixture:
-Chlorosilicate, as disclosed in DE 10036940 and described there prior art,
-orthosilicate, sulfide, contain sulfur metal and vanadate, as disclosed in WO 2000/33390 and described there prior art,
-aluminate, oxide, halophosphates, as disclosed in US 6616862 and described there prior art,
-nitride, Sione and sialon (Sialone), as disclosed in DE 10147040 and described there prior art,
The garnet of-rare earth such as YAG:Ce and alkaline earth element are as disclosed in US 2004-062699 and described there prior art.
For example have light-emitting diode chip for backlight unit 21 at the light source 2 shown in Figure 22 A to 23, light-emitting diode chip for backlight unit pours into top described type.The case frame of the chip housing 235 shown in the figure has the recess of shaping like this, makes recess be used as to be adjusted at the adjusting servicing unit of the optical element 1 on the light-emitting diode chip for backlight unit 21.
The recess of chi frame has the basic configuration of square or rectangle, angle wherein square or rectangle is overlapping with shape circular, for example annulus, make the limit of optical element 1 to introduce in the case frame, and widen in this circle and to implement by recess in technical simple mode.
Replacedly, optical element 1 also can be configured to have the optical conductor of constant cross section, as shown in Figure 38.Perhaps be configured to have optical conductor, as shown in Figure 37 towards the cross section of light output end increase.Especially when light source had the light-emitting diode chip for backlight unit 21 of emission different colours light and/or launches the luminescence conversion element of different colours light, optical conductor was used for the light of hybrid light source 2 and causes the light cone of more even illumination.
Particularly preferably be, the radiation output of optical conductor for example shines upon by projecting lens, because light cone is mixed by big degree ground by optical conductor on this position.Relative therewith, can be observed the division increase of light cone along with the distance increase of distance optical conductor.
Optical conductor for example has the polygonal cross section of even number.It especially has the sub-face of straight distribution, and sub-face extends to light output end from light input end.Optical conductor also can be provided with holding element 12, and holding element extends laterally out from element body in the light input end side, and extends with element body compartment of terrain direction towards light input end in the structure of supporting shape.Element body and holding element 12 are preferably by the same material structure, and special preferred single layer ground structure.
Understand figuratively speaking in Figure 40 which influence is 12 pairs of radiated emission from optical conductor of holding element have.Drawn the relevant light distribution of distance among the figure with the optical axis of distance optical conductor, wherein solid line is represented the measurement to the radiation intensity in the light path of (as shown in Figure 37) behind the optical conductor with holding element not, and dotted line is illustrated under the situation of using the optical conductor that has holding element 12 (as shown in Figure 39) to the measurement of brightness.The radiation coupling output that can recognize 12 pairs of optical conductors that are used to mix of holding element from curve has no significant effect.
Figure 36 also shows the blender with holding element.In embodiment shown in Figure 35, optical conductor 1 has the shape of cubic.Be different from example discussed above, near holding element element body from optical conductor light input end extends in this optical element.
When the light source 2 shown in Figure 14 to 16,18,19,28,33C and 36 has corresponding plug 25, when being used for electrically contacting light source by corresponding plug, light source 2 shown in Figure 20 and 21 alternatively comprises a plurality of pin twos 9 that electrically contact, yet they are to be fit to make the corresponding plug of light source 2 and one or more to be electrically connected equally.
Another kind of deformation program has been shown in Figure 22 A to 23 and 35.In the light source shown in these figure 2, setting connects these light sources conductively by electric interface 291.This for example realizes by welding.
Various described in this application features and element are not limited to use in projector equipment, though they especially work in projector equipment together synergistically.Various features can each be represented the invention of a uniqueness respectively and be suitable for use in different other fields with element.Like this, light source 2 for example also can be used for headlight application or be used for general illumination.Such optical element can be used as unique invention and has used at different purposes.Same setting that also is applicable to luminescence conversion element or application perhaps are used for the structure of light source supporting mass, also are applicable to the setting of the light-emitting diode chip for backlight unit in chip housing, the light source or the setting of optical element.
The present invention is not subjected to limit with reference to the explanation of embodiment.More precisely, the present invention includes any new feature and the new combination of these features, this especially comprises the feature combination in any in the claim, even these features or combination itself do not clearly state in Patent right requirement or embodiment.

Claims (25)

1. a projector equipment has optical modulator and at least one light source, and described optical modulator has optical receiving region, and described optical receiving region has size and is A MCross section to be illuminated and for the maximum acceptance angle α of incident light, produce the light cone of the cross section that is used to illuminate described optical receiving region by described light source in when work, and described light source has the light-emitting diode chip for backlight unit that quantity is N, and described light-emitting diode chip for backlight unit has size and is A DRadiation coupling output face and greatest irradiation angle β, it is characterized in that,
Be provided with at least one optical element in-the light path between described light-emitting diode chip for backlight unit and described optical modulator,
Have the gap in-the light path between described light-emitting diode chip for backlight unit and described optical element, described gap is filled with gas,
The radiation coupling output face A of-described light-emitting diode chip for backlight unit DThere is not couplant, and
-0.7* (A M* sin 2(α))/(A D* sin 2(β) * n 2)≤N≤1.3* (A M* sin 2(α))/(A D* sin 2(β) * n 2), n=1 wherein.
2. a projector equipment has optical modulator and at least one light source, and described optical modulator has optical receiving region, and described optical receiving region has size and is A MCross section to be illuminated and for the maximum acceptance angle α of incident light, produce the light cone of the cross section that is used to illuminate described optical receiving region by described light source in when work, and described light source has the light-emitting diode chip for backlight unit that quantity is N, and described light-emitting diode chip for backlight unit has size and is A DRadiation coupling output face and greatest irradiation angle β, it is characterized in that,
Be provided with at least one optical element in-the light path between described light-emitting diode chip for backlight unit and described optical modulator,
The radiation coupling output face A of-described light-emitting diode chip for backlight unit DBe provided with couplant,
-0.7*(A M*sin 2(α))/(A D*sin 2(β)*n 2)≤N≤1.3*(A M*sin 2(α))/(A D*sin 2(β)*n 2)，
Wherein n equals the refractive index of the material of described couplant.
3. each described projector equipment in requiring according to aforesaid right, it is characterized in that, described light-emitting diode chip for backlight unit has thin layer, described thin layer has the active area of launching electromagnetic radiation, and described active area does not have growth substrates basically and is provided with reflector with side that primary radiation face deviates from.
4. projector equipment according to claim 3 is characterized in that, the cross section A of the optical receiving region of described optical modulator MHas length l MWith width b M, the primary radiation mask of described thin layer has length l DWith width b D, described light-emitting diode chip for backlight unit is arranged to the matrix that x is capable and y is listed as, wherein:
0.7* (l M* sin (α))/(l D* sin (β) * n)≤x≤1.3* (l M* sin (α))/(l D* sin (β) * n), and
0.7*(b M*sin(α))/(b D*sin(β)*n)≤y≤1.3*(b M*sin(α))/(b D*sin(β)*n)。
5. each described projector equipment in requiring according to aforesaid right is characterized in that, the possible values of quantity N or number x or y equals the adjacent integer that corresponding merchant's round-up or round down arrive, and wherein said merchant is (A M* sin 2(α))/(A D* sin 2(β) * n 2), (l M* sin (α))/(l D* sin (β) * n) or (b M* sin (α))/(b D* sin (β) * n).
6. each described projector equipment in requiring according to aforesaid right is characterized in that, the probable value of quantity N or number x or y equals the adjacent integer that corresponding merchant's round-up or round down arrive.
7. each described projector equipment in requiring according to aforesaid right is characterized in that the primary radiation mask of described light-emitting diode chip for backlight unit has the shape of substantial rectangular.
8. each described projector equipment in requiring according to aforesaid right is characterized in that a plurality of light-emitting diode chip for backlight unit are assigned an optical element jointly.
9. each described projector equipment in requiring according to aforesaid right is characterized in that described light-emitting diode chip for backlight unit is divided at least two groups, and they are assigned special-purpose optical element respectively.
10. each described projector equipment in requiring according to aforesaid right is characterized in that, is provided with luminescence conversion element after at least a portion of described light-emitting diode chip for backlight unit.
11. projector equipment according to claim 10 is characterized in that, is provided with different luminescent conversion materials after the different light-emitting diode chip for backlight unit of described light source.
12. according to each described projector equipment in the aforesaid right requirement, it is characterized in that, described optical element is constructed in the mode of nonimaging optics amplitude transformer, compares with the common use of amplitude transformer, and described optical concentrator is set for radiation irradiation in the opposite direction.
13. projector equipment according to claim 12 is characterized in that, described optical element is CPC type, CEC type or CHC type amplitude transformer.
14., it is characterized in that the reflecting surface of described optical element partly or completely is configured to the scope of freedom according to claim 12 or 13 described projector equipments.
15. projector equipment according to claim 12, it is characterized in that, described optical element has sidewall, described sidewall links to each other the radiation input with the radiation output, and described sidewall be constructed so that direct line that distribute on the described sidewall, between described radiation input and described radiation output basically as the crow flies the trend.
16. according to each described projector equipment in the claim 12 to 14, it is characterized in that, described optical element has element body, and described element body limits a cavity, and the inwall of described cavity reflects the part SPECTRAL REGION of the light of described light emitted at least.
17. according to each described projector equipment in the claim 12 to 14, it is characterized in that, described optical element is constructed in the mode of dielectric amplitude transformer, its element body is the complete body with dielectric material of appropriate index, the feasible light that is coupled in the described optical element passes through the peripherad dieletric reflection of total reflection on the side interface of described complete body, and wherein said side interface links to each other the radiation input with the radiation output.
18. according to each described projector equipment in the claim 12 to 17, it is characterized in that described optical element has the radiation output, described radiation output has the boundary face that overarches of similar lens.
19., it is characterized in that described optical element is configured to have constant cross-section or has towards the optical conductor of the cross section of described light output end increase, is used for the mixing of light according to each described projector equipment in the claim 1 to 11; Described light path is provided with at least one such optical conductor after the perhaps described optical element.
20., it is characterized in that described optical element is configured to have the optical conductor towards the cross section of described light output end increase, is used for the mixing of light according to each described projector equipment in the claim 1 to 11; Light path is provided with at least one such optical conductor after the perhaps described optical element.
21. according to each described projector equipment in the aforesaid right requirement, it is characterized in that the part of adjacent light-emitting diode chip for backlight unit or all adjacent light-emitting diode chip for backlight unit have the distance that is less than or equal to 300 μ m and is greater than or equal to 0 μ m each other.
22. according to each described projector equipment in the aforesaid right requirement, it is characterized in that the part of adjacent light-emitting diode chip for backlight unit or all adjacent light-emitting diode chip for backlight unit have the distance that is less than or equal to 100 μ m and is greater than or equal to 0 μ m each other.
23. according to each described projector equipment in the aforesaid right requirement, it is characterized in that, the cross section that described optical element has substantial rectangular in a side, wherein this side is the side that described optical element has the radiation output.
24. according to each described projector equipment in the claim, it is characterized in that, described optical element has the first greatest irradiation angle along first plane, and has the second greatest irradiation angle along second plane, and the described second greatest irradiation angle is different from the described first greatest irradiation angle.
25. projector equipment according to claim 24 is characterized in that, the described first greatest irradiation angle is more than or equal to 10 ° and be less than or equal between 13 °, and the described second greatest irradiation angle more than or equal to 13 ° to being less than or equal between 18 °.
CNB2006800165582A 2005-05-13 2006-04-21 Projector equipment Active CN100571353C (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102221769A (en) * 2011-06-29 2011-10-19 苏州佳世达光电有限公司 Spotlight module and projector employing same
US8809082B2 (en) 2008-12-30 2014-08-19 Osram Opto Semiconductors Gmbh Method for producing lamps
CN104160331A (en) * 2012-02-16 2014-11-19 高通Mems科技公司 Flash illumination system

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8809082B2 (en) 2008-12-30 2014-08-19 Osram Opto Semiconductors Gmbh Method for producing lamps
CN102221769A (en) * 2011-06-29 2011-10-19 苏州佳世达光电有限公司 Spotlight module and projector employing same
CN102221769B (en) * 2011-06-29 2013-04-17 苏州佳世达光电有限公司 Spotlight module and projector employing same
CN104160331A (en) * 2012-02-16 2014-11-19 高通Mems科技公司 Flash illumination system
CN104160331B (en) * 2012-02-16 2016-03-02 高通Mems科技公司 flash lamp illumination system

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