CN101176182A - Method of encapsulating a display element - Google Patents
Method of encapsulating a display element Download PDFInfo
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- CN101176182A CN101176182A CNA200680016088XA CN200680016088A CN101176182A CN 101176182 A CN101176182 A CN 101176182A CN A200680016088X A CNA200680016088X A CN A200680016088XA CN 200680016088 A CN200680016088 A CN 200680016088A CN 101176182 A CN101176182 A CN 101176182A
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Abstract
A method of encapsulating a display device between substrates with a glass frit. The method includes depositing a frit having an optical absorption a which is a function of wavelength onto a first substrate wherein the deposited frit has a height h, placing a second substrate in contact with the frit, sealing together the substrates by traversing a laser light having a wavelength lambda over the frit at a speed greater than about 5 mm/s, and wherein a multiply h at is greater than or equal to 0.4.
Description
According to 35U.S.C § 119 (e), the application requires the priority of No. the 60/748296th, the U.S. Provisional Application series number submitted on December 6th, 2005, and its whole content is drawn at this and is reference.
Technical field
The present invention relates to be fit to the hermetically sealing glass packages of protection, more specifically, relate to the method that seals this device the thin-film device of surrounding environment sensitivity.
Background technology
In recent years, Organic Light Emitting Diode (OLED) has become the object of big quantity research, and this is because they have application and possible purposes in numerous electroluminescent devices.For example, single OLED can be used for the discrete luminescent device, the OLED array can be used for perhaps that illumination is used or during flat-panel monitor (as, OLED display) uses.Especially OLED flat-panel monitor, known it is very bright, has good color contrast and wide visual angle.As everyone knows, if electrode in the OLED display and organic layer and surrounding environment are isolated by hermetically sealing, the life-span of OLED display can obviously prolong.Yet the OLED display particularly is positioned at wherein electrode and organic layer, but very likely because interact and the generation deterioration with oxygen that leaks into this OLED display from surrounding environment and moisture.Regrettably, the encapsulating method that will develop hermetically sealing OLED display in the past is unusual difficulty.Hereinafter brief discussion cause being difficult to suitably seal some factor of OLED display:
Hermetically sealing should provide oxygen (10
-3Centimetre
3/ rice
2/ day) and water (10
-6Gram/rice
2/ sky) barrier.
The size of hermetically sealing should be as far as possible little (as,＜2mm), thus it can not exerted an adverse impact to the size of OLED display.
The temperature that produces in the seal process should not destroy material in the OLED display (as, electrode and organic layer).For example, first pixel apart from the OLED of the about 1-2 millimeter of seal should not be heated to above 100 ℃ temperature in the OLED display in seal process.
The gas that discharges in the seal process should not produce the material in the OLED display and pollute.
Hermetically sealing should be able to make electric connecting part (as thin-film chromium electrodes) enter the OLED display.
A kind of method of sealing OLED display is to form hermetically sealing by the fusing low temperature glass frit, and wherein said low temperature glass frit is doped with the material that specific wavelength of light is had high-absorbable.For example, adopt superlaser heating and soften glass material, the cover glass of frit is arranged thereon and have on it between the base plate glass of OLED to form hermetically sealing.Frit is about 1 mm wide usually, about 6-100 micron thickness.If the absorptance of frit and thickness are even, laser energy that can be constant and laser traverse speed are finished sealing so, and the temperature of frit part is evenly risen.Yet if frit is thinner, frit can not absorb 100% laser energy so.For example, the metal electrode that links to each other with OLED on the base plate glass absorbs or has reflected some laser energies.Because what need use is thin frit, and the reflectivity of metal electrode and absorption properties, and thermal conductivity is different from naked base plate glass, in seal process, this situation can produce uneven Temperature Distribution in that frit is inner, and the result can cause producing non-air-tightness between cover glass and the base plate glass and be connected.In addition, the high absorptance of electrode may cause electrode overheating, and then causes its damage.Utilize one or more Sealing Technologies of the present invention can solve this sealing problem.
Summary of the invention
Embodiments of the present invention provide two base plate seals method together, and described substrate is the glass substrate that for example is used for the OLED display device.
In brief, can implement the described a kind of method/equipment of this specification/system, also have additive method/equipment/system certainly.
In one embodiment, provide the method for sealing display element, this method comprises: frit is deposited on first substrate, and wherein frit has absorptance (opticalabsorption) α as the variable of wavelength, and the height of deposition frit is h; First substrate is arranged on second substrate, and frit is arranged between them; By with speed mobile laser above frit greater than about 5 mm/second, make two base plate seals together, wherein Wavelength of Laser is λ, and the α h when wavelength is λ is more than or equal to about 0.4, preferably between 0.4-about 1.75, more preferably between about 0.5-1.3.
In another embodiment of the invention, disclosed a kind of method, this method comprises: frit is deposited on first substrate, and wherein frit has the absorption alpha as the variable of wavelength, and first substrate is the shaped as frame of high h; Frit is clipped between first substrate and second substrate, wherein is provided with display element and at least one electrode above second substrate, described at least one electrode extends between the frit and second substrate; Seeing through first substrate is the laser of λ with the speed mobile wavelength in the length range of frit greater than about 5 mm/second, with first and second base plate seals together; α h when wherein optical maser wavelength is λ is more than or equal to about 0.4, preferably between about 0.4-about 1.75, more preferably between about 0.5-1.3.
In another execution mode, the method for sealing display element is provided, this method comprises: frit is deposited on first substrate, and wherein frit has the absorption alpha as the variable of wavelength, and first substrate is the shaped as frame of high h; The presintering frit; First substrate is placed on the second substrate top, has one or more display element and at least one metal electrode that comprise organic material on second substrate, make display element be located in the frame, and at least one electrode passes through below frit; With peak wavelength is that the laser of λ sees through the first substrate heating glass material, between first and second substrate, form hermetically sealing, α h when wherein optical maser wavelength is λ is more than or equal to about 0.4, preferably between about 0.4-about 1.75, more preferably between about 0.5-1.3.
By the explanatory description of doing below in conjunction with accompanying drawing, can more easily understand the present invention, and other targets of the present invention, characteristics, details and advantage also will become more clear.The description does not here mean that a bit restriction.All these other systems, method feature and advantage all are intended to be included among the description of the invention, comprise within the scope of the present invention, and are subjected to the protection of appended claims.
The accompanying drawing summary
Fig. 1 is the side cross-sectional, view of display device of the present invention.
Fig. 2 is the side cross-sectional, view of first substrate and deposition frit thereon.
Fig. 3 is the vertical view of first substrate shown in Figure 2, has shown the frit that is deposited as shaped as frame.
Fig. 4 is the vertical view of second substrate, deposits display element and electrode on it.
Fig. 5 is the partial cross section figure of display device shown in Figure 1, shown the position of laser and laser beam in the seal process.
Fig. 6 is the diagram of the Several Methods of first and second substrate of sealing.
Detailed Description Of The Invention
In the following detailed description, the unrestricted purpose for explanation has provided the illustrative embodiments that discloses detail, to provide thorough of the present invention.Yet for the person of ordinary skill of the art, by the present invention, other execution modes that obviously can be different from the detail that this specification introduces are put into practice the present invention.In addition, may save description, so that outstanding description content of the present invention to well-known device, method and material.At last, as long as be suitable for, identical label is represented identical parts.
Though be to describe Sealing Technology of the present invention below, should be appreciated that identical or similar Sealing Technology is used for two glass plates are sealed in considerable application and device in conjunction with the OLED display of making hermetically sealing.Therefore, should not be construed as Sealing Technology of the present invention and only limit to this.
Fig. 1 has shown the side cross-sectional, view of the OLED display of the hermetically sealing in one embodiment of the present invention, this display represents with label 10 prevailingly, and it comprises the electrode 20 that first substrate 12, frit 14, second substrate 16, at least one OLED element 18 and at least one and OLED element electrically contact.Though only shown an OLED element for simplicity, can settle many OLED elements in the display device 10.Should be appreciated that if what make is not OLED display 10, but will be similar to the glass packages that is used in the optical pickocff, except OLED18, also can deposit the thin-film device of other types so with Sealing Technology manufacturing another kind of the present invention.
A kind of preferred embodiment in, first substrate 12 is transparency glass plates, as the trade name Code 1737 or the Eagle 2000 of Corning Corp.'s produce and market
TMThe glass glass plate.Perhaps, first substrate 12 can be any transparency glass plate such as Asahi Glass Co. (as OA10 glass and OA21 glass), Nippon ElectricGlass Co., NHTechno and Samsung Corning Precision Glass Co. produce and market.Second substrate 16 is glass plates identical with first substrate 12, and perhaps second substrate 16 also can be non-transparency carrier.
Shown in Fig. 2-3, before being sealed to first substrate 12 on second substrate 16, frit 14 is deposited on first substrate 12.Can frit 14 be applied on first substrate 12 by silk screen printing or auto spiral charger able to programme (auger robot), on first substrate 12, provide shape good pattern.For example, frit 14 can be placed the about 1 millimeter place of free edge 13 of distance first substrate 12.In a preferred embodiment, frit 14 is low temperature glass frit, and it has significant absorption cross-section under the predetermined wavelength that the operation wavelength with the employed laser of sealing technology is complementary.For example, frit 14 can contain one or more and is selected from following light absorption ion: iron, copper, vanadium, neodymium and their combination (for example).Frit 14 filler (as transforming filler (inversion filler) or additive filler) that can also mix, filler can change the thermal coefficient of expansion of frit 14, makes the thermal coefficient of expansion of frit 14 and the thermal coefficient of expansion of substrate 12 and 16 be complementary or be complementary basically.The thermal conductivity of this frit is generally greater than about 500 microns
2/ second, be about 800 microns usually
2/ second, but can be above 1000 microns
2/ second.More detailed descriptions as for the exemplary frit compositions that can be used for the application, can be with reference to No. the 10/823331st, the U.S. Patent application that is entitled as " GlassPackage that is Hermetically Sealed with Frit and Method of Fabrication (with the glass packaging and the manufacture method of frit gas-tight seal) ", its content is drawn at this and is reference.
Behind the presintering frit 14, can pulverize frit when needing, make height change be no more than about 2-4 micron, typical object height h can be about 10 microns to greater than 30 microns, this depends on the application of device; Yet more typical height h is about the 12-15 micron.If when the variation of height, then made frit 14 fusings greater than the 2-4 micron during being sealed to second substrate, the gap can not be closed, perhaps, this gap may cause stress, makes substrate cracked.The height h of frit 12 is important parameters, and it can allow substrate pass through substrate 12 sealings.If frit 14 is too thin, it can not stay enough materials and absorb laser emission, causes fault.If frit 14 is too thick, it can absorb the frit of enough energy fusings near first surface at first surface, but because the thermal conductivity aspect of frit has also stoped fusing near this zone (for example near second substrate 16) on the required energy arrival frit of the frit of second surface.This latter event is the rate limit situation of substrate that sealing has the heavy sheet glass bed of material, may cause between two glass substrates in conjunction with weak effect or inhomogeneous.
After the frit 14 of presintering was pulverized, first substrate 12 can be removed any chip of accumulation till now by the ultrasonic wave cleaning ambient of a gentleness.This used typical solution than be used to clean the solution gentleness that do not have the demonstration of other deposition glass many.When cleaning, keep lower temperature, decompose with the frit of avoiding depositing 14.
After the cleaning, can carry out last treatment step, to remove residual moisture.First substrate 12 of presintering can be placed on and keep 6 hours in 100 ℃ the vacuum furnace or the longer time.After taking out in the vacuum furnace, first substrate 12 of this presintering is placed in the clean room case, before carrying out seal process, stops dust and chip on substrate, to be accumulated.
Fig. 3 has shown second substrate 16 before being sealed on first substrate 12, and it comprises one or more OLED elements 18 and one or more electrode 20, and electrode is used for the OLED element is connected to other device.Typical OLED 18 comprises one or more organic layer (not shown) and anode/cathode 20.Yet those skilled in the art should understand easily, and any known OLED 18 or following OLED 18 all can be used in the OLED display 10.
Seal process comprises first substrate 12, comprise frit 14, be placed on second substrate, 16 tops, and one or more OLED 18 and one or more electrode 20 have been positioned at the second substrate top, like this, frit 14 and OLED/ electrode 18 and 20 just are sandwiched between two substrates 12 and 16 that separated by frit 14. Substrate 12 and 16 is applied gentle pressure, make it in seal process, to keep in touch.Shown in the local feature of display device 10 as shown in Figure 5, laser 22 makes light beam 24 see through first substrate 12 and is mapped on the frit 14, and heating glass material 14 makes frit 14 fusings and form to connect and in conjunction with the gas-tight seal of substrate 12 with substrate 16.This hermetic seal can also prevent that oxygen and the moisture in the surrounding environment from entering OLED display 10, thus protection OLED 18.
For example, can make laser beam 24 be defocused to the about 3.5 millimeters hot spot of diameter, thereby the temperature gradient in the frit 14 is relaxed more.Yet should be pointed out that reasonable is that laser beam 24 is wideer than the width of frit 14, so laser beam 24 width can be greater than 3.5 millimeters.Frit 14 needs preheating and annealing stage usually before fusing.In addition, first substrate of process presintering should leave in the inert atmosphere, in case reuptake O before fusing
2And H
2 O.Laser beam 24 can extremely surpass in the scope of 40 mm/second in about 0.5 mm/second to the speed that the frit pattern moves, and can be up to 300 mm/second, and this specifically depends on parameter setting.For seal speed (speed that laser beam moves) faster above frit 14, for example surpass about 40 mm/second, may need mobile laser beam 24 and not mobile laser itself.For example, can be by finishing this task with the reflector folded light beam that is installed on the current detector spare.Melt frit and substrate 12 and 16 is sealed together required energy changes with the absorption coefficient alpha of frit 14 and thickness (highly) h.If place reflector or absorbed layer below frit 14, as specific lead material 20, institute's energy requirement also will be affected so; Institute's energy requirement also Stimulated Light device mobile speed on frit influences.In addition, frit 14 can change with the uniformity and the packing material size of frit.This can also to frit absorb laser and and then the mode that is melted on substrate 12 and 16 have a negative impact.
Fig. 5-6 has shown how to place substrate 12 and 16 with respect to laser beam 24.Can comprise the lens combination (not shown), but that it not the energy of transmission laser bundle 24 is desired.Equally, laser beam 24 can defocus a little 28 from focus 26, the temperature gradient when passing frit 14 to reduce laser beam 24.Should be pointed out that if this gradient too steep (focusing on too intensively), OLED display 10 can explode so, causes display fault immediately.
Fig. 6 has shown several exemplary policy, can be used to make first substrate 12 (comprising frit 14) to keep closely contacting with second substrate 16, so that sealing.First method is that substrate 12 and 16 is placed on the bloom 30, and a magnet 32 is arranged at first substrate 12 and 16 tops.Another kind method is that substrate 12 and 16 is placed between the silica discs 34 and 36 of two cleanings, and described disk is extremely smooth, and scratch/pit is seldom arranged.Can in many ways these two silica discs 34 and 36 be clipped together described disk transmissive near-infrared radiation then.If disk 34 and 36 is smooth and extremely hard, so thin substrate 12 and 16 can keep its shape, and keeps smooth, and is in direct contact with one another.
The motion of bearing substrate 12 and 16 platform (not shown) can be by the control of computer (not shown), and computer is distributed in the pattern of the frit 14 on first substrate 12 according to the program running of finishing with tracking.Most patterns of frit 14 are rectangles, have fillet.The range of curvature radius at angle is between 0.5 millimeter-4 millimeters, and this is essential for reducing the overheated of this zone.When the movement slows down of x direction and the motion of y direction when accelerating, it is overheated to take place; Vice versa.For eliminating this overheating effect, can regulate speed, power or the radius of laser beam 24.For example, only by keeping radius of curvature can overcome this effect greater than the coverage of defocused laser beams 24.
Because frit 14 has certain transparency, image position all can form extra thermal source, because laser beam 24 is reflected back toward in the frit 14 in it down and have the so any layer of reflexive electrode 20.Though it is radiation dose does not have double, more much more than desirable.In addition, there are some that near infrared ray is being had absorbability in these electrodes 20, this means that they can produce significant heating effect after being subjected to laser beam 24 radiation.When electrode 20 showed absorbability and reflectivity simultaneously, it can produce the effect that is difficult to overcome with seal strategy.This effect can be considered the power density problem in the unit interval.Because electrode 20 is to disperse to place when where prior uncertain frit 14 will be positioned at, so must the power controlling density issue.
Sealing Technology of the present invention can heat sealed laser 22 and melt frit 14 in seal process, pass under frit 14 even may have the electrode 20 of different pattern and character.Utilize Sealing Technology of the present invention, can avoid in seal process, damaging electrode.For this reason, Sealing Technology should be considered some factors, and these factors can influence thermal diffusion speed, and influences the temperature of frit 14 at seal point conversely.At first, as mentioned above, the transmissivity of typical frit 14 can change 2%-30%, and this specifically depends on its composition and thickness.Secondly, form according to it, electrode 20 can absorb or the light of reflecting ﹠ transmitting frit 14.
Usually, the relation between laser translational speed V and the frit absorption alpha (unit is the inverse of distance, for example 1/ micron) can be released from dispersion relation:
V＝4BD/r
2 (1)
Wherein V is the speed that laser moves above frit 14, and D is the conductive coefficient of frit, and r is the diffusion length of frit, and B is a proportionality factor.Because the gross thickness of frit is its directly thickness and the frit thickness sum that is melted by thermal diffusion of fusing:
h＝r+1/α (2)
Wherein α is the absorptivity of frit.Therefore, V can be expressed as:
V＝4BD/(h-1/α)
2 (3)
This expression formula is set up when h＞1/ α (being that frit has high absorption).Equation (3) illustrates between the absorptance of sealing (moving) speed, frit and the thermal conductivity and has how confidential relation.
On the other hand, low absorbefacient frit may allow sealing speed faster.Regrettably, sealing speed is fast more, requires the power output of laser high more usually.Under the situation of electrode absorption laser (being that electrode has absorbability in the output wave strong point of laser), electrode may be heated to the temperature that is enough to destroy electrode.In order to determine suitable sealing speed under the situation that has electrode in consideration, can utilize following relation:
V＝4BD/(h-(1+A·10
-αh)/α-(R/α)·10
-αh)
2 (4)
Wherein A is the electrode absorptance, and R is the electrode reflectivity.
Usually, the sealing speed of viable commercial surpasses 5 mm/second, and under this speed, luminous power may be damaged electrode greater than the 10-15 watt-hour.For example, luminous power may be damaged chromium electrode greater than about 10 watt-hours, and molybdenum electrode may be destroyed above about 15 watts (spot diameter 2 ω are less than about 1.8 millimeters) times in luminous power.Preferably, laser beam is equal to or greater than the frit width at least at the lip-deep spot diameter of frit.The used spot diameter of the present invention equals 2 ω, and wherein ω is the distance to beam axis, and this moment, beam density was the 1/e of largest beam intensity
2Laser beam should be preferably between about 0.5-300 mm/second at the lip-deep spot diameter of frit.Usually, peak light power should specifically depend on rate travel, spot diameter etc. between 0.5 watt-1.5 kilowatts.
As an illustration, suppose that spot diameter is 1.8 millimeters, it surpasses the live width of frit, and then: when rate travel was less than or equal to about 5 mm/second, peak light power should be maintained at about below 15 watts; When rate travel was less than or equal to 10 mm/second greater than about 5 mm/second, peak light power should keep being less than or equal to 25 watts; When rate travel was less than or equal to 20 mm/second greater than 10 mm/second, peak light power should be maintained at about below 36 watts; When rate travel was less than or equal to 40 mm/second greater than 20 mm/second, peak light power should be maintained at about below 45 watts.Emphasize that once more these are usefulness for illustrative purposes only, luminous power, rate travel and spot diameter can change with concrete application.
We have found that, by selecting frit 14, make it under the wavelength of laser beam 24, have suitable absorptance, perhaps select Wavelength of Laser according to the absorbent properties of frit conversely, make parameter alpha h (wherein the unit of h is micron) more than or equal to about 0.4, preferably between about 0.4 and 1.75, do not need to regulate luminous power so and can avoid damaging electrode, for example when laser passes electrode upper glass material by complex mechanism.More preferably, α h is between about 0.5 and 1.3.
Should emphasize, above-mentioned execution mode of the present invention, particularly any " preferably " execution mode only is possible operational instances, only is used to be expressly understood principle of the present invention.Can make many changes and improvements to above-mentioned execution mode of the present invention, and not deviate from spirit of the present invention and principle basically.All these improvement and change all are included within this specification and the scope of the present invention, are subjected to the protection of appended claims.
Claims (20)
1. seal the method for display element, this method comprises:
Frit is deposited on first substrate, and wherein frit has the absorption alpha as the variable of wavelength, and the height of the frit of deposition is h;
Place second substrate, it is contacted with frit;
By with speed mobile laser beam above frit more than or equal to about 0.5 mm/second, make described base plate seals together, wherein the wavelength of laser beam is λ;
α h when wavelength is λ is more than or equal to about 0.4.
2. method according to claim 1 is characterized in that the α h when wavelength is λ is between about 0.4-about 1.75.
3. method according to claim 1 is characterized in that described speed is greater than about 0.5-300 mm/second.
4. method according to claim 1 is characterized in that the α h when wavelength is λ is between about 0.5-about 1.3.
5. method according to claim 1 is characterized in that h is greater than about 10 microns.
6. method according to claim 1 is characterized in that the peak power of laser beam is between about 0.5W-1.5 kilowatt.
7. method according to claim 1 is characterized in that, laser beam at lip-deep spot diameter 2 ω of frit between about 1.8-25 millimeter.
8. method according to claim 1 is characterized in that the thermal conductivity of frit is greater than about 500 microns
2/ second.
9. method according to claim 1 is characterized in that, described frit be mixed with chosen from Fe, copper, vanadium, neodymium with and the dopant of combination.
10. method of sealing display element, this method comprises:
Frit is deposited on first substrate, and wherein frit has the absorption alpha as the variable of wavelength, and first substrate is the shaped as frame of high h;
Frit is clipped between described first substrate and second substrate, wherein has display element and at least one electrode above second substrate, described at least one electrode extends between the described frit and second substrate;
Seeing through first substrate is the laser of λ with the speed mobile wavelength in the length range of frit greater than about 5 mm/second, with first and second base plate seals together;
Wherein optical maser wavelength is λ
1The time α h more than or equal to about 0.4.
11., it is characterized in that described display element comprises organic material as method as described in the claim 10.
12., it is characterized in that described speed is between about 0.5-300 mm/second as method as described in the claim 10.
13. as method as described in the claim 10, before it also is included in and is clipped in frit in two substrates, the presintering frit.
14. seal the method for display element, this method comprises:
Frit is deposited on first substrate, and wherein frit has the absorption alpha as the variable of wavelength, and first substrate is the shaped as frame of high h;
The described frit of presintering;
First substrate is placed on the second substrate top, has one or more display element and at least one metal electrode that comprise organic material on second substrate, make display element be located in the frame, and at least one electrode passes through below frit;
With peak wavelength is that the laser of λ sees through the first substrate heating glass material, forms hermetically sealing between first and second substrate;
α h when wherein optical maser wavelength is λ is more than or equal to about 0.4.
15., it is characterized in that described heating comprises with the speed more than or equal to about 0.5 mm/second moves laser as method as described in the claim 14 above frit.
16., it is characterized in that the α h when wavelength is λ is between about 0.5-about 1.3 as method as described in the claim 14.
17., it is characterized in that the thermal conductivity of frit is greater than about 500 microns as method as described in the claim 14
2/ second.
18., it is characterized in that the thermal conductivity of frit is greater than about 800 millimeters as method as described in the claim 14
2/ second.
19., it is characterized in that the peak light power of described laser beam is between about 0.5 watt-1.5 kilowatts as method as described in the claim 14.
20. as method as described in the claim 14, it is characterized in that, laser beam at lip-deep spot diameter 2 ω of frit between about 1.8-25 millimeter.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US74829605P | 2005-12-06 | 2005-12-06 | |
| US60/748,296 | 2005-12-06 | ||
| US11/593,768 | 2006-11-07 |
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| Publication Number | Publication Date |
|---|---|
| CN101176182A true CN101176182A (en) | 2008-05-07 |
| CN100585771C CN100585771C (en) | 2010-01-27 |
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| CN200680016088A Expired - Fee Related CN100585771C (en) | 2005-12-06 | 2006-11-28 | Method of encapsulating a display element |
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