CN101172658A - Method for producing strontium chromate nano-stick with room temperature solid phase chemical reaction - Google Patents
Method for producing strontium chromate nano-stick with room temperature solid phase chemical reaction Download PDFInfo
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- CN101172658A CN101172658A CNA2007101625791A CN200710162579A CN101172658A CN 101172658 A CN101172658 A CN 101172658A CN A2007101625791 A CNA2007101625791 A CN A2007101625791A CN 200710162579 A CN200710162579 A CN 200710162579A CN 101172658 A CN101172658 A CN 101172658A
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Abstract
The invention relates to a preparation method for strontium chromate nanometer stick. The invention is characterized in that solid strontium chloride and proper content of polyethylene glycol 400 or hexadecyl trimethyl ammonium bromide and solid potassium chromate are milled together so as to obtain strontium chromate nanometer stick at one step, with diameter of 60 to 140nm and length of 3 icrometers. The method has the advantages of mild condition, easy operation, high yield, no environmental pollution and board service scale.
Description
Technical field the present invention relates to solid-state strontium chloride and potassiumchromate passes through producing strontium chromate nano-stick with room temperature solid phase chemical reaction in the presence of suitable tensio-active agent.
Nano material that the accurate one dimension of background technology is solid such as nanometer rod, nano thread, nano wire are meant and are nanoscale that on two-dimensional direction length is more much bigger than the yardstick on the above-mentioned two-dimensional direction, even is the novel nano-material of maroscopic quantity.Monodimension nano stick is different with nano-powder, not only has small-size effect, surface effects, special property such as quantum size effect and macro quanta tunnel effect, there are the new quantum coupling effect that causes by nanostructure combination and synergistic effect etc. again, therefore often demonstrate excellent optical property, electric property, magnetic performance and catalytic performance, and this structural system is easy to realize control to its performance by outfield (electricity, magnetic, light), thereby becomes the designing material of nanometer superminiature device and be subjected to paying close attention to widely.
The preparation of nanometer rod and the research of performance are one of current nano materials research contents.The preparation method of existing monodimension nanometer material mainly contains template, gas-liquid-solid growth method, electrodip process, laser ablation method, high-temperature laser method of evaporation, physical evaporation method, drop epitaxial method, sol-gel method etc., and these methods respectively have its limitation.
Seek a kind of reaction conditions gentleness, easy handling, to prepare nanometer rod be necessary to method simply and easily.Room temperature solid state reaction method is simple to operate, need not special instrument and experiment condition, is a kind of method for preparing compound simply and easily.
Summary of the invention the object of the present invention is to provide a kind of mild condition, easy and simple to handle, reaction not to need solvent, environmentally safe, productive rate height, the method for preparing nanometer rod applied widely.The inventor is in the process of studying solid-solid state reaction, find when two solid-state reactants generation chemical reactions, in the nucleating growth process of resultant, nucleation rate is during much larger than formation speed, can make the globular nanoparticle, find also that simultaneously because the existence of tensio-active agent, it can provide an interface to help the nanocrystalline nanometer rod that is self-assembled into according to a certain direction when adding suitable tensio-active agent in reaction system.The method that the present invention prepares nanometer rod is that two solid-state reactants and the tensio-active agent ratio by the amount of substance of certain reaction is mixed, and fully grinding promptly makes nanometer rod.Method of the present invention is to grind preparation strontium yellow nanometer rod together with solid-state strontium chloride, polyoxyethylene glycol or hexadecyl trimethyl ammonium bromide and solid-state strontium yellow.Method of the present invention is applicable to preparation chromic salt and molybdate nanometer rod.
Solid state reaction of the present invention prepare the strontium yellow nanometer rod the method mild condition, simple to operate, reaction does not need solvent, environmentally safe, productive rate height, can reach more than 91%, applied widely.
Description of drawings Fig. 1 is the stereoscan photograph of the prepared strontium yellow nanometer rod of solid-state strontium chloride, polyoxyethylene glycol, solid-state strontium yellow solid state reaction.Fig. 2 is the stereoscan photograph of the prepared strontium yellow nanometer rod of solid-state strontium chloride, hexadecyl trimethyl ammonium bromide, solid-state strontium yellow solid state reaction.
Embodiment accurately takes by weighing 0.02 mole of strontium chloride in mortar, 6 milliliters of poly(oxyethylene glycol) 400 or 0.005 mole of hexadecyl trimethyl ammonium bromide will be added behind its porphyrize, after mixing again to the 0.02 mole of potassiumchromate that wherein adds porphyrize, mixed grinding is after half an hour, with distilled water supersound washing, suction filtration till not having chlorion with 0.01 mol silver nitrate solution inspection and existing, 60 ℃ of dryings are 3 hours in loft drier, getting diameter is 60-140nm, length can reach the strontium yellow nanometer rod of 3 μ m, and productive rate is 91.8%.
Claims (1)
1. the method for a producing strontium chromate nano-stick with room temperature solid phase chemical reaction, it is characterized in that in the presence of suitable surfactant polyethylene 400 or hexadecyl trimethyl ammonium bromide, solid-state strontium chloride and the solid-state potassiumchromate ratio with 1: 1 amount of substance is mixed, and fully grinding promptly makes the strontium yellow nanometer rod.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007101625791A CN101172658B (en) | 2007-10-10 | 2007-10-10 | Method for producing strontium chromate nano-stick with room temperature solid phase chemical reaction |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2007101625791A CN101172658B (en) | 2007-10-10 | 2007-10-10 | Method for producing strontium chromate nano-stick with room temperature solid phase chemical reaction |
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| CN101172658A true CN101172658A (en) | 2008-05-07 |
| CN101172658B CN101172658B (en) | 2010-09-01 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103113296A (en) * | 2013-03-15 | 2013-05-22 | 新疆大学 | Solid-phase chemical preparation method of 8-hydroxyquinoline nickel nanowires |
| CN103496743A (en) * | 2013-10-14 | 2014-01-08 | 哈尔滨工业大学 | Preparation method of spherical strontium chromate powder controllable in micron-sized crystal growth morphology |
| CN110791356A (en) * | 2019-11-14 | 2020-02-14 | 王思记 | Method for preparing solid lubricating material by using cutting slurry after silicon wafer cutting |
-
2007
- 2007-10-10 CN CN2007101625791A patent/CN101172658B/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103113296A (en) * | 2013-03-15 | 2013-05-22 | 新疆大学 | Solid-phase chemical preparation method of 8-hydroxyquinoline nickel nanowires |
| CN103113296B (en) * | 2013-03-15 | 2015-04-15 | 新疆大学 | Solid-phase chemical preparation method of 8-hydroxyquinoline nickel nanowires |
| CN103496743A (en) * | 2013-10-14 | 2014-01-08 | 哈尔滨工业大学 | Preparation method of spherical strontium chromate powder controllable in micron-sized crystal growth morphology |
| CN110791356A (en) * | 2019-11-14 | 2020-02-14 | 王思记 | Method for preparing solid lubricating material by using cutting slurry after silicon wafer cutting |
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| CN101172658B (en) | 2010-09-01 |
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