CN101170059A - Method for making silicon base band irradiance and non-linear electric-light material - Google Patents
Method for making silicon base band irradiance and non-linear electric-light material Download PDFInfo
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Abstract
A method of preparing silicon band edge luminous and nonlinear electro-optic materials includes the step of: 1) taking a p-type or n-type silicon underlay;2) manufacturing a layer of silicon film on the surface of the p-type or n-type silicon underlay; 3) forming a nano-scale silicon compound quantum dot in the silicon film with the size the quantum dot being less than 20 nanometer. The invention can realize effective room temperature silicon band edge luminous and high nonlinear electro-optic material and the device. The material can be applied to silicon optoelectronic integration.
Description
Technical field
The present invention relates to a kind of method for preparing the luminous and non-linear electrooptical material of band edge, particularly a kind of method for preparing the luminous and non-linear electrooptical material of silica-based band edge.
Background technology
In the past few decades, silica-based microelectronics has obtained huge progress, and very large scale integration technology has become the indispensable part of entire society's economic life.Along with the progress of technology, sharply reducing of integrated circuit technology live width over the past two decades, the arithmetic speed of single MOS transistor is more and more faster.The space of performance of improving whole integrated circuit (IC) chip by the arithmetic speed of improving single transistor is more and more littler, and along with the raising of chip integration, what restrict the chip arithmetic speed often is not the arithmetic speed of single transistor, comes from the delay that signal transmits between the transistor more.This delay is owing to serve as the wiring capacitance that the metal material of the line between the transistor causes and cause.Along with the increase of integrated level, the length of metal connecting line is more and more longer.Present Intel runs quickly, and the length of metal connecting line has reached 5 kms on four (Pentium IV) cpu chip, also can further increase in the future.The length of line is long more, and the delay of signal on transmission line is also just big more.So increase the arithmetic speed of chip, must try every possible means to improve the efficient that the signal between the transistor of chip transmits.
With respect to utilizing electronics to realize upward unavoidable delay effect of signal transmission,, then can avoid the problem of signal delay if adopt the carrier of photon as the signal transmission.Owing to silicon integrated circuit technology has developed very ripely, the very poor III-V family material of employing and silica-base material compatibility is said so unpractical with integrated level as the active layer that photon signal produces on technology.So solve the bottleneck problem of integrated circuit technology development in the future, outlet can only be to realize the silica-based high-efficiency luminescent device compatible fully with existing silicon integrated circuit technology.
And to realize that the silicon based opto-electronics subclass becomes required efficient luminescent device, the only way out can only be the electrical injection laser of total silicon, because have only laser that high signal modulating speed just can be provided.2004, Intel Company has reported and has utilized Raman effect to realize continuous silica-based sharp the penetrating of optical pumping under the room temperature, but, become required light source as the silicon based opto-electronics subclass, best outlet should be the silicon substrate laser that electricity injects, and therefore Raman laser is used limited in silicon based opto-electronics subclass in the future becomes because the principle restriction can not be made the device that electricity injects.
In the past in order to realize silicon base luminescence efficiently, doping impurity is main means of improving the silicon base luminescence performance always, but, the method also has important disadvantages, the optical state density that can bring owing to mix is limited, realize that by doping high-intensity silica-based optical gain is very difficult, be difficult to therefore realize that silica-based electricity injects sharp penetrating.
2004, U.S.'s Applied Physics wall bulletin magazine has reported that grinding the solid room temperature electricity that showed of P-N that silicon chip surface that the Chen Minzhang doctor of institute utilizes nano-silicon dioxide particle to modify makes in the Taiwan injects to swash and penetrate (Appliedphysics letters, the V842163 page or leaf), before this, his doctor tutor professor Lin Qingfu has reported that the tunnel junction that silicon chip surface that nano-silicon dioxide particle is modified is made realized that silica-based room temperature electricity injects the feature of penetrating near swashing, gone through United States Patent (USP) (PatentNo:US6770903B2) of relevant achievement.
On the other hand, integrated in order to realize silica-based photoelectron, not only need silica-based efficiently light source, also need silica-based efficiently optical nonlinearity electro-optical device.Yet, as everyone knows, silicon is center symmetry cubic crystal, single order, second-order optical nonlinearity effect are very weak, and existing silica-based optical modulation device is many based on the charge carrier effect of dispersion, and American I ntel company has reported the silica-based modulator that surpasses 1G based on this principle modulating speed, but, because the restriction of principle, the space that miniaturization of devices, performance further promote all can be very little, presses for and develop the silica-base material with big optical non-linear effect.2005, the Denmark scientist has been reported to utilize at silicon chip surface deposit one deck silicon nitride at the Nature magazine and has introduced strain field, realized bigger silica-based optical nonlinearity coefficient, but this kind method is defectiveness also, can only significantly not change the quality of silicon materials introducing strain field near the surface of silicon chip.
All above-mentioned progress all are to the silicon chip surface modification, and this has seriously restricted its application.
Summary of the invention
The purpose of patent of the present invention provides a kind of method for preparing the luminous and non-linear electrooptical material of silica-based band edge, the silica-base film that contains nanoscale silicon base compound quantum dot at silica-base material surface preparation one deck, this silicon base compound quantum dot silica-base film material boundary around causes fluctuating from nanoscale to silicon materials lattice parameter yardstick to provide the luminous required extra momentum of band edge to satisfy conservation of momentum rule, the localization that also can realize the nanoscale of charge carrier in the silicon materials on every side and phonon causes electron wave function to launch at momentum space, realize that the nearly direct band gap of indirect band gap silica-base material band edge is luminous, the stress field that while silicon base compound quantum dot brings also can be destroyed the lattice centre symmetry of silicon materials on every side, thereby can realize luminous and high non-linearity electrooptical material and device of the silica-based band edge of room temperature efficiently.This type of material can be applicable to the silicon based opto-electronics subclass.
Its advantage is with existing microelectronic technique compatible fully, and technology is simple, realizes easily.
The present invention is a kind of to prepare the method for the luminous and non-linear electrooptical material of silica-based band edge, it is characterized in that, comprising:
Step 1: get a p-type or n-type silicon-based substrate;
Step 2: at p-type or n-type silicon-based substrate surface preparation one deck silica-base film;
Step 3: form nanoscale silicon base compound quantum dot in silica-base film, the size of silicon base compound quantum dot is less than 20 nanometers.
2, a kind of method for preparing the luminous and non-linear electrooptical material of silica-based band edge according to claim 1 is characterized in that wherein the crystal orientation of p-type or n-type silicon-based substrate is (hkl), h, and k, l are integer.
3, a kind of method for preparing the luminous and non-linear electrooptical material of silica-based band edge according to claim 1, it is characterized in that, wherein p-type or n-type silicon-based substrate are monocrystalline silicon, or be alloy between monocrystalline silicon, germanium, carbon, the tin, quantum well, quantum wire and quantum dot, or be SOI, i.e. silicon-on-insulator-silicon on insulator, or be the alloy between monocrystalline silicon, germanium, carbon, the tin on the insulator.
4, a kind of method for preparing the luminous and non-linear electrooptical material of silica-based band edge is characterized in that, comprises the steps:
Step 1: get a p-type or n-type silicon-based substrate;
Step 2:, prepare the silica-base film of a Silicon-rich based compound on p-type or n-type silicon-based substrate surface;
Step 3: in silica-base film, form the silicon base compound quantum dot of nanoscale by annealing treating process, make the silica-base film crystallization simultaneously.
5, a kind of method for preparing the luminous and non-linear electrooptical material of silica-based band edge according to claim 4 is characterized in that wherein the crystal orientation of p-type or n-type silicon substrate is (hkl), h, and k, l are integer.
6, a kind of method for preparing the luminous and non-linear electrooptical material of silica-based band edge according to claim 4, it is characterized in that, wherein p-type or n-type silicon substrate are monocrystalline silicon, or be alloy between monocrystalline silicon, germanium, carbon, the tin, quantum well, quantum wire and quantum dot, or be SOI, i.e. silicon-on-insulator-silicon on insulator, or be the alloy between monocrystalline silicon, germanium, carbon, the tin on the insulator.
7, a kind of method for preparing the luminous and non-linear electrooptical material of silica-based band edge according to claim 4 is characterized in that wherein silica-base film is the silicon material layer of rich silicon dioxide, rich silicon nitride, rich nitrogen-oxygen-silicon or rich iron suicide.
8, a kind of method for preparing the luminous and non-linear electrooptical material of silica-based band edge according to claim 4, it is characterized in that wherein silica-base film injects or the preparation of laser ablation means by plasma chemical vapor deposition, sputter, evaporation, extension, ion.
9, a kind of method for preparing the luminous and non-linear electrooptical material of silica-based band edge according to claim 4 is characterized in that wherein the thickness of silica-base film is less than 500 nanometers.
10, a kind of method for preparing the luminous and non-linear electrooptical material of silica-based band edge according to claim 4, it is characterized in that, wherein silica-base film generates the iron suicide silicon base compound quantum dot of silicon dioxide, silicon nitride, nitrogen-oxygen-silicon, iron suicide or rich iron of compound silicon dioxide, silicon nitride, nitrogen-oxygen-silicon, iron suicide or the Silicon-rich of the nanoscale in the silicon materials that are embedded in crystallization through technology such as subsequent anneal, and the size of silicon base compound quantum dot is less than 20 nanometers.
11, a kind of method for preparing the luminous and non-linear electrooptical material of silica-based band edge according to claim 4, it is characterized in that wherein formation of silicon base compound quantum dot and silica-base film crystallization make by subsequent thermal annealing, laser annealing or original position in the silica-base film.
The present invention is a kind of to prepare the method for the luminous and non-linear electrooptical material of silica-based band edge, it is characterized in that, comprises the steps:
Step 1: get a p-type or n-type silicon-based substrate;
Step 2: on p-type or n-type silicon-based substrate surface, prepare the silica-base film that the superlattice of a silicon base medium layer and silica-base material are formed, the thickness of silicon base medium layer is less than 1/2nd of the thickness of silica-base material;
Step 3: in silica-base film, form the silicon base compound quantum dot of nanoscale by annealing treating process, make the silica-base film crystallization simultaneously.
Wherein the crystal orientation of p-type or n-type silicon substrate is (hkl), h, k, l integer.
Wherein p-type or n-type silicon substrate are monocrystalline silicon, or be alloy, quantum well, quantum wire, quantum dot between monocrystalline silicon, germanium, carbon, the tin, or be SOI, i.e. silicon-on-insulator-silicon on insulator, or be the alloy between monocrystalline silicon, germanium, carbon, the tin on the insulator.
Wherein the silica-base material in the silica-base film comprises the alloy between silicon, germanium, carbon, the tin.
Wherein the silicon base medium layer thickness in the silica-base film is less than 20 nanometers.
Wherein silica-base material thickness is more than 2 times of silicon base medium layer thickness in the silica-base film.
Wherein the silicon base medium layer is made up of the compound that contains silicon atom in the silica-base film, the iron suicide of silicon dioxide, silicon nitride, nitrogen-oxygen-silicon, iron suicide or the rich iron of preferred silicon dioxide, silicon nitride, nitrogen-oxygen-silicon, iron suicide or Silicon-rich.
Wherein in the silica-base film silicon base medium layer reaction makes with the silicon material layer surface low-temperature then by utilizing UV excimer laser to interrupt keys such as N-N key, N-H key, O-O are strong, N-O key under nitrogen, ammonia, oxygen, laughing gas or their mixed atmosphere.
Wherein the silicon base medium layer makes by at high temperature reacting with silicon materials under oxygen, ammonia, laughing gas or their mixed atmosphere in the silica-base film.
Wherein silicon base medium layer and silica-base material make by extension, sputter, evaporation or laser ablation means in the silica-base film.
Wherein top layer is the silicon base medium layer or is silica-base material in the silica-base film.
Wherein silica-base film is through the iron suicide silicon base compound quantum dot of silicon dioxide, silicon nitride, nitrogen-oxygen-silicon, iron suicide or the rich iron of silicon dioxide, silicon nitride, nitrogen-oxygen-silicon, iron suicide and the Silicon-rich of subsequent anneal technology or growth in situ generation nanoscale, and the size of silicon base compound quantum dot is less than 20 nanometers.
The core of this method just is to mix in the silica-base material the inside of crystalline state the compound quantum dot of nanoscale, and general in the world way is to mix the quantum dot of nanoscale in the compound-material the inside.Mix this kind quantum dot in the silica-base material the inside and can form stress field on the crystalline silicon sill border of contact with it on the one hand, the lattice centre symmetry that can effectively change silica-base material is realized the non-linear electro-optic coefficient of bigger coefficient, also can increase the weak luminous probability of silica-base material by extra momentum source is provided.The room temperature band edge luminous intensity increase that our experiment confirm can make the body silicon materials through very simple process steps such as low temperature dry-oxygen oxidation etc. is more than at least ten times, and the highest can reach 100 times.Further grope process conditions, if the quantum dot size that forms in the silica-base material the inside is littler, density is higher, and relevant improvement meeting is more obvious, is expected to realize the optical gain and the enlarge-effect of pure silicon sill, penetrates advantageous particularly to realizing in the future that silica-based electricity injects to swash.Together with the improvement on non-linear electro-optic coefficient, relevant progress helps to realize silica-based integrated optoelectronics.
Description of drawings
For further specifying technology contents of the present invention, below in conjunction with example and accompanying drawing the present invention is done a detailed description, wherein
Fig. 1 is the flow chart of first embodiment of the invention;
Fig. 2 is the flow chart of second embodiment of the invention;
Fig. 3 is the flow chart of third embodiment of the invention;
Fig. 4 is SiOx thin-film material and the SiO that utilizes PECVD to prepare
2The silica-based near band edge room temperature fluorescence spectrum comparison diagram of film sample after different temperatures annealing in 30 minutes under the process high pure nitrogen protective atmosphere;
Fig. 5 is the natural oxidizing layer of silicon chip and utilizes at silicon chip surface thermal oxidation 5 nanometers and 10 nanometer SiO
2The basis on adopt PECVD at SiO
2Last preparation amorphous silicon membrane high annealing under nitrogen atmosphere makes the surface silicon crystallization generate the nano level silica dioxide granule band edge room temperature fluorescence spectrogram of sample afterwards simultaneously between surface silicon and silicon substrate.
Embodiment
The present invention proposes the method for the luminous and non-linear electrooptical material of the fully compatible silica-based band edge of preparation of a kind of and existing microelectronic technique.Experimental study shows, and directly at silicon chip surface deposit SiO
2Or the growth natural oxidizing layer is compared on silicon chip, the rich SiO of deposit one deck on silicon
2Silica-base film after, through subsequent anneal technology, form the silicon base compound quantum dot of nanoscale in the silica-base film the inside, bring silica-based nearly band edge luminescent properties that at least 10 times raising is arranged.
Thought of the present invention is to provide a kind of method for preparing the luminous and non-linear electrooptical material of silica-based band edge, its core is the silica-base film that contains nanoscale silicon base compound quantum dot at silica-base material surface preparation one deck, this silicon base compound quantum dot silica-base film material boundary around causes fluctuating from nanoscale to silicon materials lattice parameter yardstick to provide the luminous required extra momentum of band edge to satisfy conservation of momentum rule, the localization that also can realize the nanoscale of charge carrier in the silicon materials on every side and phonon causes electron wave function to launch at momentum space, realize that the nearly direct band gap of indirect band gap silica-base material band edge is luminous, the stress field that while silicon base compound quantum dot brings also can be destroyed the lattice centre symmetry of silicon materials on every side, thereby can realize luminous and high non-linearity electrooptical material and device of the silica-based band edge of room temperature efficiently.This type of material can be applicable to the silicon based opto-electronics subclass.Its advantage is with existing microelectronic technique compatible fully, and technology is simple, realizes easily, and relevant progress is expected to be applied to silica-based optical interconnection.
Embodiment 1:
See also shown in Figure 1ly, it is characterized in that, comprising:
Step 1: get a p-type or n-type silicon-based substrate 10; The crystal orientation of this p-type or n-type silicon-based substrate 10 is (hkl), h, and k, l are integer; This p-type or n-type silicon-based substrate 10 are monocrystalline silicon, or be alloy between monocrystalline silicon, germanium, carbon, the tin, quantum well, quantum wire and quantum dot, or be SOI, be silicon-on-insulator-silicon oninsulator, or be the alloy between monocrystalline silicon, germanium, carbon, the tin on the insulator;
Step 2: at p-type or n-type silicon-based substrate 10 surface preparation one deck silica-base films 20;
Step 3: form nanoscale silicon base compound quantum dot 30 in silica-base film 20, the size of silicon base compound quantum dot 30 makes silica-base film 20 crystallizations simultaneously less than 20 nanometers.
Embodiment 2:
See also a kind of method for preparing the luminous and non-linear electrooptical material of silica-based band edge shown in Figure 2, the silica-base film 20 that at first on silicon substrate, prepares the Silicon-rich based compound, in silica-base film 20, form the silicon base compound quantum dot 30 of nanoscale by annealing treating process on this basis, thereby prepare the luminous and non-linear electrooptical material of silica-based band edge.It is characterized in that, comprise the steps:
Step 1: get a p-type or n-type silicon-based substrate 10; The crystal orientation of this p-type or n-type silicon substrate 10 is (hkl), h, and k, l are integer; This p-type or n-type silicon substrate 10 are monocrystalline silicon, or be alloy between monocrystalline silicon, germanium, carbon, the tin, quantum well, quantum wire and quantum dot, or be SOI, be silicon-on-insulator-silicon on insulator, or be the alloy between monocrystalline silicon, germanium, carbon, the tin on the insulator;
Step 2:, prepare the silica-base film 20 of a Silicon-rich based compound on p-type or n-type silicon-based substrate 10 surfaces; This silica-base film 20 is the silicon material layer of rich silicon dioxide, rich silicon nitride, rich nitrogen-oxygen-silicon or rich iron suicide; This silica-base film 20 injects or the preparation of laser ablation means by plasma chemical vapor deposition, sputter, evaporation, extension, ion; The thickness of this base film 20 is less than 500 nanometers;
Step 3: in silica-base film 20, form the silicon base compound quantum dot 30 of nanoscale by annealing treating process, make silica-base film 20 crystallizations simultaneously.
This silica-base film 20 generates the iron suicide silicon base compound quantum dot 30 of silicon dioxide, silicon nitride, nitrogen-oxygen-silicon, iron suicide or rich iron of compound silicon dioxide, silicon nitride, nitrogen-oxygen-silicon, iron suicide or the Silicon-rich of the nanoscale in the silicon materials that are embedded in crystallization through technologies such as subsequent anneal, the size of silicon base compound quantum dot 30 is less than 20 nanometers.
30 formation of silicon base compound quantum dot and silica-base film 20 crystallizations make by subsequent thermal annealing, laser annealing or original position in this silica-base film 20.
Embodiment 3:
See also a kind of method for preparing the luminous and non-linear electrooptical material of silica-based band edge shown in Figure 3, the silica-base film 20 that the superlattice of preparation one silicon base medium layer 40 and silica-base material 50 are formed on silicon substrate, the thickness of silicon base medium layer 40 is less than 1/2nd of the thickness of silica-base material 5, in silica-base film 20, form the silicon base compound quantum dot 30 of nanoscale by annealing treating process on this basis, thereby prepare the luminous and non-linear electrooptical material of silica-based band edge.It is characterized in that, comprise the steps:
Step 1: get a p-type or n-type silicon-based substrate 10; The crystal orientation of this p-type or n-type silicon substrate 10 is (hkl), h, k, l integer; This p-type or n-type silicon substrate 10 are monocrystalline silicon, or be alloy, quantum well, quantum wire, quantum dot between monocrystalline silicon, germanium, carbon, the tin, or be SOI, i.e. silicon-on-insulator-silicon on insulator, or be the alloy between monocrystalline silicon, germanium, carbon, the tin on the insulator;
Step 2: on p-type or n-type silicon-based substrate 10 surfaces, prepare the silica-base film 20 that the superlattice of a silicon base medium layer 40 and silica-base material 50 are formed, the thickness of silicon base medium layer 40 is less than 1/2nd of the thickness of silica-base material 50; Silica-base material 50 in this silica-base film 20 comprises the alloy between silicon, germanium, carbon, the tin; Silicon base medium layer 40 thickness in this silica-base film 20 are less than 20 nanometers; Silica-base material 50 thickness are more than 2 times of silicon base medium layer 40 thickness in this silica-base film 20; Silicon base medium layer 40 is made up of the compound that contains silicon atom in the silica-base film 20, the iron suicide of silicon dioxide, silicon nitride, nitrogen-oxygen-silicon, iron suicide or the rich iron of preferred silicon dioxide, silicon nitride, nitrogen-oxygen-silicon, iron suicide or Silicon-rich; Reaction makes silicon base medium layer 40 with the silicon material layer surface low-temperature then by utilizing UV excimer laser to interrupt keys such as N-N key, N-H key, O-O are strong, N-O key under nitrogen, ammonia, oxygen, laughing gas or their mixed atmosphere in this silica-base film 20; Silicon base medium layer 40 is by at high temperature reaction makes with silicon materials under oxygen, ammonia, laughing gas or their mixed atmosphere in the silica-base film 20; Silicon base medium layer 40 and silica-base material 50 make by extension, sputter, evaporation or laser ablation means in this silica-base film 20; Top layer is silicon base medium layer 40 or is silica-base material 50 in this silica-base film 20;
Step 3: in silica-base film 20, form the silicon base compound quantum dot 30 of nanoscale by annealing treating process, make silica-base film 20 crystallizations simultaneously.
This silica-base film 20 is through the iron suicide silicon base compound quantum dot 30 of silicon dioxide, silicon nitride, nitrogen-oxygen-silicon, iron suicide or the rich iron of silicon dioxide, silicon nitride, nitrogen-oxygen-silicon, iron suicide and the Silicon-rich of subsequent anneal technology or growth in situ generation nanoscale, and the size of silicon base compound quantum dot 30 is less than 20 nanometers.
Fig. 4 is SiOx thin-film material and the SiO that utilizes PECVD to prepare
2The silica-based near band edge room temperature fluorescence spectrum contrast of film sample after different temperatures annealing in 30 minutes under the process high pure nitrogen protective atmosphere; excitation source adopts argon ion laser; optical source wavelength is a rice in 488, and exciting power is 60 milliwatts, and chopper frequencies is 273 hertz.SiOx thin-film material and SiO
2Film preparation is＜100〉on the n type silicon chip in crystal orientation, the resistivity of silicon chip is 5 ohmcms, the preparation of using plasma chemical vapor deposition, underlayer temperature is 250 ℃.The SiOx thin-film material allowed the silica-base material crystallization in 30 minutes through 1000 ℃ of high pure nitrogens protection annealing then, formed the silicon dioxide quantum point of nanoscale simultaneously in the silica-base material the inside.As a comparison, SiO
2Film has also been done heat treatment under same condition.
Fig. 5 is the natural oxidizing layer of silicon chip and utilizes at silicon chip surface thermal oxidation 5 nanometers and 10 nanometer SiO
2The basis on adopt PECVD at SiO
2Last preparation amorphous silicon membrane high annealing under nitrogen atmosphere makes the surface silicon crystallization generate the nano level silica dioxide granule band edge room temperature fluorescence spectrum of sample afterwards simultaneously between surface silicon and silicon substrate.Excitation source adopts argon ion laser, and optical source wavelength is 488 nanometers, and exciting power is 60 milliwatts, and chopper frequencies is 273 hertz.Silicon chip is that resistivity is 5 ohmcms on＜100〉crystal orientation n type silicon chips.The surface heat oxidation is carried out in common tube type high-temperature furnace the inside, and temperature is 900 ℃, and dry-oxygen oxidation, the flow of oxygen are 1.2 liters of per minutes.Amorphous silicon membrane adopts PECVD to feed the silane preparation under 250 ℃ the situation, and the flow of silane is 80 milliliters of per minutes (80sccm).On this basis, at common tube type resistance furnace the inside logical high pure nitrogen protection annealing, the silicon dioxide granule that allows recrystallized amorphous silicon and make it to generate nanoscale with the silicon dioxide layer reaction of thermal oxidation.Can see, compare that long again amorphous silicon can make silicon materials band edge luminescent properties increase more than 10 times after oxidation 5 nanometers or 10 nano-oxide layers with the silicon chip that has only natural oxidizing layer.
Claims (23)
1. a method for preparing the luminous and non-linear electrooptical material of silica-based band edge is characterized in that, comprising:
Step 1: get a p-type or n-type silicon-based substrate;
Step 2: at p-type or n-type silicon-based substrate surface preparation one deck silica-base film;
Step 3: form nanoscale silicon base compound quantum dot in silica-base film, the size of silicon base compound quantum dot is less than 20 nanometers.
2. a kind of method for preparing the luminous and non-linear electrooptical material of silica-based band edge according to claim 1 is characterized in that wherein the crystal orientation of p-type or n-type silicon-based substrate is (hkl), h, and k, l are integer.
3. a kind of method for preparing the luminous and non-linear electrooptical material of silica-based band edge according to claim 1, it is characterized in that, wherein p-type or n-type silicon-based substrate are monocrystalline silicon, or be alloy between monocrystalline silicon, germanium, carbon, the tin, quantum well, quantum wire and quantum dot, or be SOI, i.e. silicon-on-insulator-siliconon in sulator, or be the alloy between monocrystalline silicon, germanium, carbon, the tin on the insulator.
4. a method for preparing the luminous and non-linear electrooptical material of silica-based band edge is characterized in that, comprises the steps:
Step 1: get a p-type or n-type silicon-based substrate;
Step 2:, prepare the silica-base film of a Silicon-rich based compound on p-type or n-type silicon-based substrate surface;
Step 3: in silica-base film, form the silicon base compound quantum dot of nanoscale by annealing treating process, make the silica-base film crystallization simultaneously.
5. a kind of method for preparing the luminous and non-linear electrooptical material of silica-based band edge according to claim 4 is characterized in that wherein the crystal orientation of p-type or n-type silicon substrate is (hkl), h, and k, l are integer.
6. a kind of method for preparing the luminous and non-linear electrooptical material of silica-based band edge according to claim 4, it is characterized in that, wherein p-type or n-type silicon substrate are monocrystalline silicon, or be alloy between monocrystalline silicon, germanium, carbon, the tin, quantum well, quantum wire and quantum dot, or be SOI, i.e. silicon-on-insulator-silicon on insulator, or be the alloy between monocrystalline silicon, germanium, carbon, the tin on the insulator.
7. a kind of method for preparing the luminous and non-linear electrooptical material of silica-based band edge according to claim 4 is characterized in that wherein silica-base film is the silicon material layer of rich silicon dioxide, rich silicon nitride, rich nitrogen-oxygen-silicon or rich iron suicide.
8. a kind of method for preparing the luminous and non-linear electrooptical material of silica-based band edge according to claim 4, it is characterized in that wherein silica-base film injects or the preparation of laser ablation means by plasma chemical vapor deposition, sputter, evaporation, extension, ion.
9. a kind of method for preparing the luminous and non-linear electrooptical material of silica-based band edge according to claim 4 is characterized in that wherein the thickness of silica-base film is less than 500 nanometers.
10. a kind of method for preparing the luminous and non-linear electrooptical material of silica-based band edge according to claim 4, it is characterized in that, wherein silica-base film generates the iron suicide silicon base compound quantum dot of silicon dioxide, silicon nitride, nitrogen-oxygen-silicon, iron suicide or rich iron of compound silicon dioxide, silicon nitride, nitrogen-oxygen-silicon, iron suicide or the Silicon-rich of the nanoscale in the silicon materials that are embedded in crystallization through technology such as subsequent anneal, and the size of silicon base compound quantum dot is less than 20 nanometers.
11. a kind of method for preparing the luminous and non-linear electrooptical material of silica-based band edge according to claim 4, it is characterized in that wherein formation of silicon base compound quantum dot and silica-base film crystallization make by subsequent thermal annealing, laser annealing or original position in the silica-base film.
12. a method for preparing the luminous and non-linear electrooptical material of silica-based band edge is characterized in that, comprises the steps:
Step 1: get a p-type or n-type silicon-based substrate;
Step 2: on p-type or n-type silicon-based substrate surface, prepare the silica-base film that the superlattice of a silicon base medium layer and silica-base material are formed, the thickness of silicon base medium layer is less than 1/2nd of the thickness of silica-base material;
Step 3: in silica-base film, form the silicon base compound quantum dot of nanoscale by annealing treating process, make the silica-base film crystallization simultaneously.
13. a kind of method for preparing the luminous and non-linear electrooptical material of silica-based band edge according to claim 12 is characterized in that wherein the crystal orientation of p-type or n-type silicon substrate is (hkl), h, k, l integer.
14. a kind of method for preparing the luminous and non-linear electrooptical material of silica-based band edge according to claim 12, it is characterized in that, wherein p-type or n-type silicon substrate are monocrystalline silicon, or be alloy, quantum well, quantum wire, quantum dot between monocrystalline silicon, germanium, carbon, the tin, or be SOI, be silicon-on-insulator-silicon on insulator, or be the alloy between monocrystalline silicon, germanium, carbon, the tin on the insulator.
15. a kind of method for preparing the luminous and non-linear electrooptical material of silica-based band edge according to claim 12 is characterized in that wherein the silica-base material in the silica-base film comprises the alloy between silicon, germanium, carbon, the tin.
16. a kind of method for preparing the luminous and non-linear electrooptical material of silica-based band edge according to claim 12 is characterized in that, wherein the silicon base medium layer thickness in the silica-base film is less than rice in 2.
17. a kind of method for preparing the luminous and non-linear electrooptical material of silica-based band edge according to claim 12 is characterized in that wherein silica-base material thickness is more than 2 times of silicon base medium layer thickness in the silica-base film.
18. a kind of method for preparing the luminous and non-linear electrooptical material of silica-based band edge according to claim 12, it is characterized in that, wherein the silicon base medium layer is made up of the compound that contains silicon atom in the silica-base film, the iron suicide of silicon dioxide, silicon nitride, nitrogen-oxygen-silicon, iron suicide or the rich iron of preferred silicon dioxide, silicon nitride, nitrogen-oxygen-silicon, iron suicide or Silicon-rich.
19. according to the described a kind of method for preparing the luminous and non-linear electrooptical material of silica-based band edge of claim 1-2, it is characterized in that, wherein in the silica-base film silicon base medium layer reaction makes with the silicon material layer surface low-temperature then by utilizing UV excimer laser to interrupt keys such as N-N key, N-H key, O-O are strong, N-O key under nitrogen, ammonia, oxygen, laughing gas or their mixed atmosphere.
20. a kind of method for preparing the luminous and non-linear electrooptical material of silica-based band edge according to claim 12, it is characterized in that wherein the silicon base medium layer makes by at high temperature reacting with silicon materials in the silica-base film under oxygen, ammonia, laughing gas or their mixed atmosphere.
21. a kind of method for preparing the luminous and non-linear electrooptical material of silica-based band edge according to claim 12 is characterized in that wherein silicon base medium layer and silica-base material make by extension, sputter, evaporation or laser ablation means in the silica-base film.
22. a kind of method for preparing the luminous and non-linear electrooptical material of silica-based band edge according to claim 12 is characterized in that, wherein top layer is the silicon base medium layer or is silica-base material in the silica-base film.
23. a kind of method for preparing the luminous and non-linear electrooptical material of silica-based band edge according to claim 12, it is characterized in that, wherein silica-base film is through the iron suicide silicon base compound quantum dot of silicon dioxide, silicon nitride, nitrogen-oxygen-silicon, iron suicide or the rich iron of silicon dioxide, silicon nitride, nitrogen-oxygen-silicon, iron suicide and the Silicon-rich of subsequent anneal technology or growth in situ generation nanoscale, and the size of silicon base compound quantum dot is less than 20 nanometers.
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| CNA200610150121XA CN101170059A (en) | 2006-10-27 | 2006-10-27 | Method for making silicon base band irradiance and non-linear electric-light material |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102231420A (en) * | 2011-06-28 | 2011-11-02 | 复旦大学 | Method for introducing extra nucleation points to silicon nanocrystalline film |
| CN103641063A (en) * | 2013-12-19 | 2014-03-19 | 中国科学院半导体研究所 | Method for preparing graphical porous silicon structure |
| CN103852951A (en) * | 2014-02-19 | 2014-06-11 | 南京大学 | Method for improving non-linear optical performance by using nanometer silicon and silicon dioxide interface state |
| CN113451122A (en) * | 2020-03-27 | 2021-09-28 | 江苏鲁汶仪器有限公司 | Method for depositing high-adhesion film on III-V substrate |
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2006
- 2006-10-27 CN CNA200610150121XA patent/CN101170059A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102231420A (en) * | 2011-06-28 | 2011-11-02 | 复旦大学 | Method for introducing extra nucleation points to silicon nanocrystalline film |
| CN103641063A (en) * | 2013-12-19 | 2014-03-19 | 中国科学院半导体研究所 | Method for preparing graphical porous silicon structure |
| CN103852951A (en) * | 2014-02-19 | 2014-06-11 | 南京大学 | Method for improving non-linear optical performance by using nanometer silicon and silicon dioxide interface state |
| CN103852951B (en) * | 2014-02-19 | 2016-11-16 | 南京大学 | Utilize nano-silicon and silicon dioxide interface state to the method improving non-linear optical property |
| CN113451122A (en) * | 2020-03-27 | 2021-09-28 | 江苏鲁汶仪器有限公司 | Method for depositing high-adhesion film on III-V substrate |
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