CN101162688B - Plasma processing device and running processing method and method for manufacturing electric device - Google Patents

Plasma processing device and running processing method and method for manufacturing electric device Download PDF

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Publication number
CN101162688B
CN101162688B CN2007101929871A CN200710192987A CN101162688B CN 101162688 B CN101162688 B CN 101162688B CN 2007101929871 A CN2007101929871 A CN 2007101929871A CN 200710192987 A CN200710192987 A CN 200710192987A CN 101162688 B CN101162688 B CN 101162688B
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China
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process chamber
clean air
spatial portion
waveguide
microwave
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CN101162688A (en
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平山昌树
大见忠弘
北村昌幸
村田等
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Tohoku University NUC
Tokyo Electron Ltd
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Tohoku University NUC
Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32201—Generating means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32229—Waveguides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/461—Microwave discharges

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

The present invention provides a technique which can clean and treat the indoor deposition with the simple structure without the long-distance cavity and special microwave source, etc. The plasma processing device of the invention uses the microwave which is transmitted in the waveguide tube and is transmitted by the dielectric medium arranged at the inner surface of the processing chamber to plasma-ionize the prescribed gas provided into the processing chamber thereby executing plasma treating to the treated body arranged in the processing chamber, wherein in the waveguide tube a space part with at least one part surrounded by the dividing wall composed of dielectric material, and a clean air flow circuit which provides clean air to the processing chamber through the space part is arranged.

Description

Plasma processing apparatus and running processing method thereof and method for making electronic device
Technical field
The present invention relates to a kind ofly utilize microwave to make gaseous plasmaization and then handled object is carried out the plasma processing apparatus and the method for operation thereof of plasma treatment, also relate to the manufacture method of a kind of method of plasma processing and electronic installation.
Background technology
For example, in the manufacturing process of LCD device etc., use and utilize microwave in process chamber, to produce plasma, thus the LCD substrate is implemented that CVD handles and the plasma processing apparatus of etch processes etc.As relevant plasma processing apparatus, known have a kind of plasma processing apparatus that disposes waveguide above process chamber.Lower surface place at waveguide offers a plurality of slots, and, along the lower surface of waveguide flat dielectric is set.Constitute following structure, that is: dielectric is configured on the entire upper surface of process chamber, by slot the microwave of propagating in waveguide is propagated to dielectric, utilized the energy of microwave to make regulation gas (processing gas) plasmaization that is provided in the process chamber.
In this plasma processing apparatus, even not only also can deposit (accumulation) filmogen on surface of the inner surface of process chamber and other parts that in process chamber, expose etc. etc. as the surface of the LCD substrate of handled object etc.When the motionless placement of deposit (deposit) former state that generates therefrom, will become the reason of pollution, and worry and the processing of article on plasma body to produce baneful influence.Thus, just in due course in the phase clean indoor, to remove deposit.
Past, like this as a kind of technology that cleans the deposit that in process chamber, produces, known have a kind of what is called (in-situ) clean technologies of ascending the throne, by the clean air that contains fluorine etc. is provided in process chamber, in process chamber, produce simultaneously plasma, make the activation such as fluorine in the clean air, utilize the effect of fluoro free radical etc., the deposit in the process chamber is also removed in etching.
But, when by plasma generation fluoro free radical in the process chamber etc., will have following problem.That is, a large amount of fluoro free radical etc. must be produced,, when power is too high, the various parts that are positioned at process chamber might be damaged so just need quite high microwave power (output) owing to clean.Its result will increase the operation of parts swap etc., and causes the reduction of maintainability.
Therefore, in order to prevent this damage that is positioned at the various parts of process chamber, and propose to have a kind of clean method, the remote chamber that is different from process chamber is set, the fluoro free radical that produced in this remote chamber etc. is provided in process chamber.
Patent documentation 1:(Japanese documentation 1) Japanese kokai publication hei 10-149989 communique
But in the clean method of above-mentioned Japanese documentation 1, the cost of device can be improved in the special microwave source that need be used to produce the remote chamber of fluoro free radical etc. and be used to produce fluoro free radical etc. therefore.In addition, make device maximization, the area of coverage (floor space: footprint) will worsen.
Summary of the invention
Therefore, the object of the present invention is to provide a kind of utilization need just can not carry out the technology of the indoor deposit of clean away from the simple structure in chamber and special microwave source etc.
In order to address the above problem, according to the present invention, a kind of plasma processing apparatus is provided, its utilization is propagated in waveguide, the microwave that the dielectric that disposes on the inner face at process chamber is propagated, make the regulation gaseous plasmaization that is provided in the process chamber, the handled object that disposes in above-mentioned process chamber is implemented plasma treatment, it is characterized in that, in above-mentioned waveguide, form the spatial portion that at least a portion is surrounded by the partition wall that constitutes by dielectric substance, be provided with by above-mentioned spatial portion, clean air is provided to clean air stream in the above-mentioned process chamber.
According to this plasma processing unit,, and do not need special remote chamber and special-purpose microwave source etc. because the power that utilizes original plasma processing apparatus to possess the microwave that waveguide propagates makes the clean air activation.
In this plasma processing unit, also above-mentioned waveguide can be arranged on the lid of the above-mentioned process chamber of switch, in the inside of above-mentioned lid, dispose the part of above-mentioned spatial portion and above-mentioned clean air stream.In addition, above-mentioned spatial portion for example is the inner space of the pipe that is made of dielectric substance.
In addition, also the clean air supply source can be connected with the upstream side of above-mentioned stream, between above-mentioned clean air supply source and above-mentioned spatial portion, on above-mentioned stream, switch valve be set.In the case, above-mentioned spatial portion can be remained on above-mentioned process chamber in identical pressure.
In addition, the clean air supply source is connected with the upstream side of above-mentioned stream with exhaust unit, between above-mentioned spatial portion and above-mentioned process chamber, in above-mentioned stream, switch valve is set.
In addition, can in the rear end side of above-mentioned waveguide, be provided with the reflection part that is used for microwave reflection that can freely insert and extract in the above-mentioned relatively waveguide than above-mentioned spatial portion.In the case, can be in the side of above-mentioned waveguide, be formed with in rear end side than above-mentioned spatial portion and make microwave propagation arrive above-mentioned dielectric slot, above-mentioned reflection part is configured between above-mentioned spatial portion and the above-mentioned slot.In addition, above-mentioned reflection part can be configured in position apart from above-mentioned spatial portion λ g/4+ λ gn/2, wherein,
λ g is the wavelength in pipe of microwave,
N is the integer more than 0.
In addition, according to the present invention, a kind of method of operation of plasma processing apparatus is provided, propagate by the dielectric that the microwave propagated in waveguide is disposed on the inner face at process chamber, be provided to the interior regulation gaseous plasmaization of process chamber and make, the handled object that disposes in above-mentioned process chamber is implemented plasma treatment, this method of operation comprises: treatment process, make the regulation gaseous plasmaization that is provided in the process chamber, the handled object that disposes in above-mentioned process chamber is implemented plasma treatment; And cleaning process, clean air is provided in the process chamber, clean in the above-mentioned process chamber, in above-mentioned cleaning process, flow through at least a portion by the spatial portion that the partition wall that forms by dielectric substance surrounds by making clean air, make the clean air activation; Be provided in the above-mentioned process chamber by the clean air that this has been activated, clean in the above-mentioned process chamber.
According to this method of operation, in above-mentioned treatment process, handled object is implemented plasma treatment, in above-mentioned cleaning process, clean in the above-mentioned process chamber.Then, in above-mentioned cleaning process, utilize original plasma processing apparatus to make the clean air activation according to the power of the microwave of the waveguide propagation of newspaper.
In above-mentioned treatment process, can there be the gas that generates plasma at spatial portion yet.In the case, in above-mentioned treatment process, can make above-mentioned spatial portion be essentially vacuum.
In addition, in above-mentioned cleaning process, above-mentioned spatial portion can be remained on above-mentioned process chamber in identical in fact pressure.
In addition, in above-mentioned cleaning process, can also be than above-mentioned spatial portion, in the rear end side of above-mentioned waveguide, the reflection part of microwave reflection is inserted in the above-mentioned waveguide.In the case, can than above-mentioned spatial portion, form slot from microwave to above-mentioned dielectric that propagate, above-mentioned reflection part is configured between above-mentioned spatial portion and the above-mentioned slot in the side of above-mentioned waveguide in rear end side.In addition, also above-mentioned reflection part can be configured in position apart from above-mentioned spatial portion λ g/4+ λ gn/2, wherein,
λ g is the wavelength in pipe of microwave,
N is the integer more than 0.
Have, in the present invention, above-mentioned clean air comprises any one in for example chlorine, fluorine gas, chlorine-containing compound gas, the fluorochemical gas again.
In addition, in above-mentioned cleaning process,, be below the 2.7kW with respect to the spatial portion of 0.25 liter of volume to the power of the microwave of above-mentioned spatial portion output.In the case, preferably have many above-mentioned waveguides, form above-mentioned spatial portion in all above-mentioned many waveguides or part of waveguide pipe, total microwave power of exporting to above-mentioned spatial portion is more than the 15kW.
In addition, according to the present invention, a kind of method of operation of above-mentioned plasma processing apparatus of the present invention is provided, it is characterized in that, comprise: treatment process, propagate by the above-mentioned dielectric that the microwave propagated in above-mentioned waveguide is disposed on the inner face at above-mentioned process chamber, and can make the regulation gaseous plasmaization that is provided in the above-mentioned process chamber, the handled object that disposes in above-mentioned process chamber is implemented plasma treatment; And cleaning process, flow through above-mentioned spatial portion by making clean air, make the clean air activation, be provided in the above-mentioned process chamber by the clean air that this has been activated, clean in the above-mentioned process chamber.
In addition, according to the present invention, a kind of method of plasma processing that adopts above-mentioned plasma processing apparatus of the present invention is provided, it is characterized in that, comprise: cleaning process, flow through above-mentioned spatial portion by making clean air, make the clean air activation, be provided in the above-mentioned process chamber by the clean air that this has been activated, clean in the above-mentioned process chamber; And treatment process, propagate by the above-mentioned dielectric that the microwave propagated in above-mentioned waveguide is disposed on the inner face at above-mentioned process chamber, and can make the regulation gaseous plasmaization that is provided in the above-mentioned process chamber, the handled object that disposes in above-mentioned process chamber is implemented plasma treatment.
In addition, according to the present invention, a kind of manufacture method that adopts the electronic installation of above-mentioned plasma processing apparatus of the present invention is provided, it is characterized in that, comprise: cleaning process, flow through above-mentioned spatial portion by making clean air, make the clean air activation, be provided in the above-mentioned process chamber by the clean air that this has been activated, clean in the above-mentioned process chamber; And treatment process, propagate by the above-mentioned dielectric that the microwave propagated in above-mentioned waveguide is disposed on the inner face at above-mentioned process chamber, and can make the regulation gaseous plasmaization that is provided in the above-mentioned process chamber, the handled object that disposes in above-mentioned process chamber is implemented plasma treatment
According to the present invention, the power of the microwave that the waveguide that utilizes original plasma processing apparatus to possess is propagated just can make the clean air activation.For this reason, can provide a kind of the needs to be used to make the special remote chamber of clean air activation and special-purpose microwave source etc., can reduce installation cost, miniaturization, the good plasma processing apparatus of cost-performance.
Description of drawings
Fig. 1 is a sectional arrangement drawing of representing the schematic configuration of plasma processing apparatus according to the embodiment of the present invention.
Fig. 2 is the lower surface figure of lid.
Fig. 3 is the sectional arrangement drawing of the lid of X-X line among Fig. 2.
Fig. 4 is the part amplification profile that is used to illustrate the feed mechanism of clean air.
Fig. 5 be reflection part key diagram, the state of extracting in the waveguide is shown.
Fig. 6 be reflection part key diagram, the state that inserts in the waveguide is shown.
Fig. 7 is the key diagram of the standing wave that produces in waveguide.
Fig. 8 is the key diagram of the reflection part of plate shape.
Fig. 9 is the key diagram that the upstream side at the clean air stream according to the present invention connects the plasma processing apparatus of clean air supply source and exhaust apparatus, and treatment process is shown.
Figure 10 is the key diagram that the upstream side at the clean air stream according to the present invention connects the plasma processing apparatus of clean air supply source and exhaust apparatus, and cleaning process is shown.
Figure 11 illustrates SiO according to an embodiment of the invention 2The etching speed of film and clean air (NF 3) the curve chart of relation of flow.
Figure 12 is the SiO of expression embodiments of the invention 2The etching speed of film and clean air (CF 4/ O 2) the curve chart of relation of flow.
Figure 13 is the SiO that illustrates according to comparative example 2The etching speed of film and clean air (NF 3) the curve chart of relation of flow.
Symbol description
G: substrate, 1: plasma processing apparatus, 2: container handling, 3: lid, 5: process chamber, 10: pedestal, 23: exhaust apparatus, 35: waveguide, 41: microwave generator, 45: slot aerial, 46: dielectric, 47: slot, 55: handle the gas supply source, 56: the cooling water supply source, 60: clean air supply source, 61: clean air stream, 62: switch valve, 65: pipe, 66: spatial portion, 70: reflection part.
Embodiment
Hereinafter, the plasma processing apparatus 1 that CVD (chemical vapor deposition, chemical vapor deposition) handles that carries out according to as an example of plasma treatment illustrates embodiments of the present invention.Fig. 1 is a sectional arrangement drawing of representing the schematic configuration of plasma processing apparatus 1 according to the embodiment of the present invention.Fig. 2 is the following figure of the included lid 3 of this plasma processing unit 1.Fig. 3 is the sectional arrangement drawing of the lid 3 in X-X cross section among Fig. 2.Have again, in this specification and accompanying drawing,, give identical symbol, and omit repeat specification for inscape with same structure and function.
Plasma processing apparatus 1 comprises the container handling that end cube shaped is arranged 2 of upper opening and seals the lid 3 of the top of this container handling 2.Place, composition surface at the upper surface outer peripheral portion of the lower surface outer peripheral portion of lid 3 and container handling 2 disposes O shape ring 4.Seal the top of container handlings 2 by usefulness lid 3, and become the process chamber 5 of confined space in the inside of container handling 2.These container handlings 2 and lid 3 are made by for example aluminium, and any one all becomes the state of electrical grounding.
In the inside of process chamber 5, be provided with the pedestal 10 of the plummer of for example glass substrate (being called hereinafter, " the substrate ") G that is used to carry as handled object.This pedestal 10 is made by for example aluminium nitride, within it portion be provided be used for Electrostatic Absorption substrate G and simultaneously to the inside of process chamber 5 apply regulation bias voltage power supply 11 and substrate G is heated to the heater 12 of set point of temperature.The adaptation 14 of power supply 11 by comprising capacitor etc. is connected with the high frequency electric source 13 that is used to apply bias voltage in the outer setting of process chamber 5, is connected with the high-voltage DC power supply 15 that is used for Electrostatic Absorption by coil 16 simultaneously.Heater 12 similarly is connected with the AC power 17 that is set at process chamber 5 outsides.
Around pedestal 10, be provided with the dividing plate 18 that is used for the air-flow of the gas in the kilter control and treatment chamber 5.
By cylindrical shell 21, pedestal 10 is supported on the lifter plate 20 at the place, outside below that is arranged at process chamber 5, by with lifter plate 20 integral elevatings, and can adjust the height of the pedestal 10 in the process chamber 5.In addition, between the bottom surface and lifter plate 20 of container handling 2,, therefore can keep the air-tightness in the process chamber 5 because bellows (bellows) 22 is installed.
In the bottom of container handling 2, be provided with exhaust outlet 24, be used to utilize the environmental gas of discharging in the process chambers 5 at the exhaust apparatus 23 of the vacuum pump of the outer setting of process chamber 5 etc., make that the essence decompression is a vacuum in the process chamber 5.
In the inside of lid 3, it is the waveguide (square waveguide) 35 of rectangular shape that horizontal arrangement has many section shapes.Have again,, in Fig. 1～3, the long side direction of waveguide 35 is defined as Y-axis, in horizontal plane, will be defined as X-axis, vertical direction is defined as the Z axle with the direction of Y-axis quadrature in order to describe.Dispose each waveguide 35, so that the long side direction of section shape (rectangular-shaped) is in vertical (Z-direction) in the H face, short side direction is in level (X-direction) in the E face.In addition, fill for example fluororesin (for example テ Off ロ Application (teflon) (registered trade mark)), Al respectively in the inside of each waveguide 35 2O 3, quartz etc. dielectric substance 36.
In the present embodiment, structure is in the inside of lid 3, in series disposes this 2 waveguides 35 on Y direction, so that the end face 35 of 2 waveguides 35 ' toward each other, and, 2 waveguides 35 of configured in series like this are arranged in parallel into 8 row.2 waveguides 35,35 ' each other that are one another in series and dispose are by separating at the lid 3 inner partition walls 37 that form.This partition wall 37 forms with lid 3, and is for example made of aluminum, and becomes the state of electrical grounding.
The initial end of waveguide 35 is outstanding to the side of lid 3.Like this, to the initial end of the outstanding waveguide 35 in the side of lid 3, connect microwave generator 41 by tuner 40.Tuner 40 (for example stub tuner) is obtained its coupling (matching) according to the impedance change of the plasma in the process chamber 5.The microwave that is produced by each microwave generator 41 is divided into two branches by Y branched pipe 42, offers 2 waveguides 35 in 2 mode respectively, until propagate into end face 35 at the waveguide 35 of the furnace roof centre configuration of process chamber 5 ' till.
The lower surface of lid 3 becomes the double slot aerial 45 of doing the basal surface of waveguide 35.Slot aerial 45 is made of integratedly conductive materials such as aluminium and lid 3, and constitutes the state of electrical grounding.
Lower surface (lower surface of lid 3) at slot aerial 45 is located, and multi-disc watt shape (tiling shape: dielectric 46 tile) is installed.In the present embodiment, at the lower surface place of each waveguide 35, arrange in per 13 mode (13 13 ground) respectively dielectric 46 is installed.Surface at the furnace roof (courtyard face) of process chamber 5 all is provided with 13 * 16=208 sheet dielectric 46 altogether.Dielectric 46 is by quartz glass, AlN, Al 2O 3, dielectric substances such as sapphire, SiN, pottery constitute.
Basal surface (slot aerial 40) at waveguide 35 is located, and offers to make microwave from waveguide 35 interior a plurality of slots 47 of propagating to dielectric 46.In the present embodiment, all set out slot 47 in per 2 mode (2 2 ground) at each dielectric 46, therefore, at the lower surface place of each waveguide 35, opening goes out 13 * 2=26 slot 47 respectively.In the inside of each slot 47, fill fluororesin, alundum (Al (Al 2O 3), the dielectric substance of quartz etc.Set each slot 47 Y direction the interval so that its become the microwave in the propagating wave conduit 35 wavelength in pipe λ g about 1/2.
Utilization is supported each dielectric 46 respectively with the beam 48 that clathrate forms.Beam 48 conductive materials by nonmagnetic materials such as aluminium form.As shown in fig. 1, beam 48 has the many gas introduction tubes 49 that connect its inside.This gas introduction tube 49 is positioned at the furnace roof surface of process chamber 5, carries out opening in a plurality of positions so that surround each dielectric 46, can be in the entire upper surface of process chamber 5 gas jet evenly distributedly.
In the inside of lid 3, be provided with gas and supply with the gas pipe arrangement 50 of usefulness and the cooling water pipe 51 that cooling water is supplied with usefulness.Gas pipe arrangement 50 is interconnected with the gas introduction tube 49 of through beam 48.
By valve 53, mass flow controller 54, gas pipe arrangement 50 is connected with processing gas supply source 55 in the exterior arrangement of process chamber 5.Handle gas supply source 55 so-called argon gas as plasma generation gas and vector gas is provided, as the gas of the regulation of the silane gas of film forming gas, hydrogen etc., the gas of regulation can spray in process chamber by gas introduction tube 49.
Cooling water pipe 51 is connected with cooling water supply source 56 in the exterior arrangement of process chamber 5.By from cooling water supply source 56 to cooling water pipe 51 circulation supply with cooling waters, and can make lid 3 remain on the temperature of regulation.
As shown in Figure 3, this plasma processing unit 1 comprise from the clean air supply source 60 of the exterior arrangement of process chamber 5 to the clean air stream 61 of the internal feed clean air of process chamber 5, clean air comprises for example chlorine, fluorine gas, chlorine-containing compound gas, fluorochemical gas (for example, NF 3, the dilution F 2, CF 4, C 2F 6, C 3F 8, SF 6, Cl and ClF 3) in any.As an example of clean air, example goes out NF 3In addition, preferred clean air comprises vector gas or plasma generation gases such as Ar.In clean air stream 61, be provided with switch valve 62, when opening this switch valve 62, clean air is provided in the process chamber 5 by clean air stream 61.
Clean air stream 61 is set, so that its part connects the inside of lid 3 and container handling 2.In addition, configuration clean air stream 61 is so that connecting on the Z-direction in the waveguide 35 that is provided with in the inside of lid 3.
As shown in Figure 4, in waveguide 35 inside, be provided with the hollow circular tube 65 of upper and lower end face opening.Pipe 65 is by for example fluororesin (for example, テ Off ロ Application (teflon) (registered trade mark)), Al 2O 3, quartz etc. dielectric substance form, in the inside of spatial portion 66, waveguide 35 in, form spatial portion 66 with partition wall (pipe 65) encirclement that forms by dielectric substance.As an example of pipe 65, example goes out the alumina tube of diameter 3/8in (inch).
On the top of this spatial portion 66, be connected with the clean air stream 61 that connects lid 3, in the bottom of this spatial portion 66, be connected with the clean air stream 61 that connects lid 3 and container handling 2.Thus, the clean air that provides from clean air supply source 60 just can be provided to the process chamber 5 by spatial portion 66.
Above-mentioned switch valve 62 is provided with above-mentioned switch valve 62 in clean air stream 61 between clean air supply source 60 and spatial portion 66, spatial portion 66 is by clean air stream 61, becomes the state with the internal communication of container handling 2.Thus, spatial portion 66 just with in the container handling 2 keeps uniform pressure.
The pipe 65 and the spatial portion 66 that are provided with in waveguide 35, a plurality of slots 47 than locate opening at the basal surface (slot aerial 40) of waveguide 35 are configured in the initially distolateral of waveguide 35.That is, in other words, a plurality of slots 47 are configured in the rear end side of waveguide 35 than pipe 65 and spatial portion 66.
In waveguide 35 inside,,, be provided with making of freely to insert and to extract in the relative waveguide 35 by the reflection part 70 of propagating the microwave reflection that comes in the waveguide 35 at the rear end side place of waveguide 35 than spatial portion 66 (pipe 65).Reflection part 70 is called so-called stub (stub), is made of conductive materials such as aluminium, becomes the state of electrical grounding.
In example shown in the drawings, reflection part 70 becomes the cylindrical shape towards X-direction configuration center axle, on the height of the central authorities of the H of waveguide 35 face, vertically disposes with the H face.In addition, reflection part 70 can move on X-direction, as shown in Figure 5, by moving, and can switch to the state extracted in the waveguide 35 and the state in the outstanding and insertion waveguide 35 to waveguide 35 in outside waveguide 35.As shown in Figure 5, at the state that reflection part 70 is extracted in the waveguide 35, the inner face of the front end face of reflection part 70 and waveguide 35 becomes same plane.On the other hand, as shown in Figure 6, the state in that reflection part 70 inserts in the waveguide 35 becomes between the H face that strides across waveguide 35, has reflection part 70.
Locate to dispose reflection part 70 between a plurality of slots 47 of opening at the basal surface (slot aerial 40) of pipe 65 and spatial portion 66 and waveguide 35.Therefore, initial distolateral towards rear end side (right-hand lay Fig. 4) from waveguide 35 sequentially disposed spatial portion 66, reflection part 70, slot 47.
Pipe 65 and spatial portion 66 are set to λ g/4 with the distance L of the Y direction of reflection part 70.Have again, in example shown in the drawings, the distance L of the Y direction of spatial portion 66 and reflection part 70 is defined as between both central shaft distance on the Y direction each other.λ g is the wavelength (wavelength in pipe) of the microwave propagated in waveguide 35.As shown in Figure 7, when the microwave that is produced by microwave generator 41 is propagated in waveguide 35, synthesize by making microwave of in waveguide 35, propagating and the transmitted wave that in waveguide 35, produces, and produce standing wave.The wavelength of this standing wave equals the wavelength X g of the microwave propagated in fact in waveguide 35, the standing waves that produce in the waveguide 35 repeat amplitude maximum and minimum value by about λ g/2 cycle.Like this, the position (position of the antinode portions of standing wave waveform) that standing wave is represented amplitude maximum and minimum value changes according to the position of reflection part 70, if from the rear end side of spatial portion 66 towards waveguide 35, insert reflection part 70 in position at a distance of λ g/4 only, then the position of the antinode portions of standing wave waveform also can with the position consistency of spatial portion 66, the power propagation that can make microwave most effectively is to spatial portion 66.Therefore, as hereinafter described, in the cleaning process in clean processing chamber 5, from spatial portion 66 towards the rear end side of waveguide 35 only at a distance of the position of λ g/4, at insertion reflection part 70 to waveguide 35 in.Thus, make the position and the position consistency of spatial portion 66 of the antinode portions of the standing wave waveform that produces by the microwave in waveguide 35, propagated and reflection wave interference, become the state that the power propagation that makes microwave most effectively arrives spatial portion 66 by reflection part 70 reflections.
And when inserting reflection part 70 in waveguide 35, for the maximum of the position amplitude that can express spatial portion 66, the distance on the Y direction of pipe 65 and spatial portion 66 and reflection part 70 just is not limited to λ g/4.As mentioned above, because the standing wave that produces in waveguide 35 by about λ g/2 cycle, repeats the maximum and the minimum value of amplitude, so establishing under the situation that n is the integer more than 0, be λ g/4+ λ gn/2 preferably with the distance setting on the Y direction of pipe 65 and spatial portion 66 and reflection part 70.
And, in plasma processing apparatus 1, be illustrated at the method for operation of the plasma processing apparatus 1 of for example amorphous silicon film forming situation according to the embodiments of the present invention that constitute as mentioned above.Substrate G is being implemented in the treatment process of plasma treatment, bearing substrate G on the pedestal 10 in process chamber 5, from handling gas supply source 55 by gas pipe arrangement 50 and gas introduction tube 49, one side is provided to the mist of predetermined process gas, for example argon gas/silane gas/hydrogen in the process chamber 5, and one side is utilized the pressure of exhaust apparatus 23 with the regulation that reduces pressure in the process chamber 5.In the case, be closed in the switch valve 62 that is provided with in the clean air stream 61, stop the supply of clean air.
Then, will handle gas like this and be provided in the process chamber 5, and utilize heater 12 substrate G to be heated to the temperature of regulation on the other hand.In addition, through Y branched pipe 42, the microwave of for example 2.45GHz that will be produced by microwave generator 41 imports within each waveguide 35.
Have again, in the science and engineering preface, as shown in Figure 5, reflection part 70 is moved to outside the waveguide 35 herein, make it become the state of extracting in the waveguide 35.Thus, the microwave that is imported in the waveguide 35 does not just reflect by reflection part 70, and directly is transmitted to till the rearward end of waveguide 35.Thus, the microwave that is imported into the rear end side of waveguide 35 just passes through each slot 47 respectively, is transmitted to each dielectric 46.Thus, utilize the power of the microwave that propagates into each dielectric 46, and can in process chamber 5, form electromagnetic field, utilize electric field energy, make and handle gaseous plasmaization, thus, the surface on the substrate G is carried out the film forming of amorphous silicon in the surface of each dielectric 46.
Have again, substrate G is being implemented in the inside of process chamber 5, utilize for example low electron temperature, 10 of 0.7eV～2.0eV in the treatment process of plasma treatment 11～10 13Cm -3High-density plasma, carry out the uniform film forming few to substrate G damage.The condition of amorphous silicon film forming is suitably for, and is 5～100Pa for the pressure in the process chamber 5 for example, is preferably 10～60Pa, is 200～450 ℃ for the temperature of substrate G, is preferably 250～380 ℃.In addition, the size of process chamber 5 is suitably for more than the G4.5, G4.5 (the size of substrate G: 730mm * 920mm for example, (size of substrate G: 1100mm * 1300mm, the power output of the inside dimension of process chamber 5: 1470mm * 1590mm), microwave generator 41 is suitably for 1～8W/cm for the inside dimension of process chamber 5: 1000mm * 1190mm), G5 2, be preferably 3W/cm 2
In addition, as mentioned above, because in the internal communication of the waveguide 35 inner spatial portions that form 66 by clean air stream 61 and container handling 2, so herein in the science and engineering preface, by the exhaust of exhaust apparatus 23, just interior the same with process chamber 5, also can make spatial portion 66 keep vacuum in fact.For this reason, in spatial portion 66, just there is not the object of plasmaization,, just do not consume the power of the microwave of in waveguide 35, propagating in the position of pipe 65.Thus, just can in generating, the plasma in the process chamber 5 more effectively consume the power of microwave.
On the other hand, when proceeding aforesaid treatment process, not only on the surface of substrate G, even and on the surface of various parts that expose at the inner surface of process chamber 5 with in process chamber 5 etc. etc., also can deposit as the amorphous silicon of filmogen.Like this deposit that generates, former state is motionless will to be become the reason of pollution, worry when placing and can the article on plasma body handles and make a very bad impression.
Therefore, in due course the phase, just carry out the cleaning process in the clean processing chamber 5.That is, when carrying out cleaning process,, open switch valve 62, by clean air stream 61 and spatial portion 66, clean air is provided in the process chamber 5 from clean air supply source 60 in process chamber 5, taking out under the state of substrate G.Have, clean air can comprise any one in for example chlorine, fluorine gas, chlorine-containing compound gas, the fluorochemical gas again, and as an example, example illustrates NF 3
So like this, in cleaning process, clean air flows through in the spatial portion 66 of pipe 65.Then, in spatial portion 66, utilize the power of the microwave of in waveguide 35, propagating, and can make the clean air activation, generate for example fluoro free radical and the so high composition of etching of chlorine radical.
By the clean air that comprises this fluoro free radical that has activated and chlorine radical is provided in process chamber 5, and can etching and remove deposit in the process chamber 5.Thus, by carrying out so-called ascending the throne (in-situ) cleaning, can clean processing chamber 5 in.
In addition, in cleaning process, as shown in Figure 6, insert reflection part 70, become on the substantial middle height of waveguide 35, stride across the state that has reflection part 70 between the H face in the inside of waveguide 35.Thus, the microwave that can in waveguide 35, propagate by reflection part 70 reflections.
In the case, the distance on the Y direction of spatial portion 66 and reflection part 70 is set to λ g/4+ λ gn/2.For this reason, like this when in waveguide 35, inserting reflection part 70, the standing wave that is produced because of the microwave of propagating waveguide 35 in and the reflection wave interference of being reflected by reflection part 70 just presents the maximum of amplitude in the position of spatial portion 66, the position of the antinode portions of standing wave waveform will with the position consistency of spatial portion 66.Thus, the power propagation that just can make microwave most effectively makes the clean air activation in the spatial portion 66 more effectively to spatial portion 66, can positively generate the so high composition of etching of fluoro free radical and chlorine radical.
Having, in this cleaning process, set the output of microwave feeding means 41, is below the 2.7kW so that can make the power of the microwave that a spatial portion 66 (volume is 0.25 liter) is exported.If increase power, therewith pro rata, just there is the tendency that increases the high composition of the such etching of the fluoro free radical that generated by spatial portion 66 and chlorine radical to the microwave of spatial portion 66 outputs.But, when the power of microwave is the 2.7kW left and right sides, just can make almost 100% activation of active component in the clean air, even if exported the microwave that surpasses 2.7kW power to spatial portion 66, also only can the produce power waste.Have again,, wish that the microwave power to 66 outputs of a spatial portion is more than the 1kW in order to generate the so high composition of etching of fluoro free radical and chlorine radical fully at spatial portion 66.
In addition, as the plasma processing apparatus 1 that illustrates in this embodiment, have under the situation of many waveguides 35, preferably dispose the pipe 65 that forms by dielectric substance, and a plurality of spatial portions 66 are set the whole of these many waveguides 35 or on part of waveguide pipe 35.Be provided with like this under the situation of a plurality of spatial portions 66, wish that the total microwave power to these a plurality of spatial portion 66 outputs is more than the 15kW.For example, as the plasma processing apparatus 1 that illustrates in this embodiment, be arranged in parallel into 8 row by 2 waveguides 35 with configured in series, all dispose 16 waveguides 35, in these 16 waveguides 35, dispose pipe 65 respectively, be provided with under the situation of spatial portion 66, adjust the output of each microwave generator 41 at 16 positions, control is to the power of the microwave of each spatial portion 66 output, and making its total microwave power is more than the 15kW.If like this, the power averaging of the microwave that each spatial portion 66 is exported singly all is more than the 1kW, just can generate fluoro free radical and the so high composition of etching of chlorine radical in each spatial portion 66 fully.
Have again, in cleaning process because spatial portion 66 is by the internal communication of clean air stream 61 with container handling 2, therefore in fact will with process chamber 5 in keep identical pressure.Because spatial portion 66 is little more a lot of than the volume of container handling 2 inside, so hold in the palm (Torr) above following time of high-pressure, also can stably make clean air generate plasma even if be in 1, generate fluoro free radical and chlorine radical.
As mentioned above, by alternately carrying out treatment process and cleaning process, running plasma processing apparatus 1 can make process chamber 5 in the maintenance normal condition plasma treatment that can also be fit to the surface of substrate G usually.Especially, according to this plasma processing unit 1,, therefore just do not need remote chamber and special microwave source etc. owing to utilize the power of the microwave of in the waveguide 35 that original plasma processing apparatus 1 is possessed, propagating to make the clean air activation.Therefore, utilize simple structure, just can clean processing chamber deposit in 5, can reduce installation cost, also can the propulsion plant miniaturization.Have again, in mode shown in the drawings, though show the example that 2 * 8=16 root waveguide 35 is set in the inside of lid 3, if but pipe 65 is installed in each waveguide 35 and is carried out the activation of clean air respectively, also fluoro free radical and chlorine radical can be generated in a large number, and cleaning efficiency can be greatly improved.
Though an example of preferred implementation of the present invention has been described hereinbefore, has the invention is not restricted to mode shown in the drawings.For those skilled in the art, should be understood that, within the thought category that the scope of claim is put down in writing, can correspondingly obtain various change examples and revise example,, obviously should belong to technical scope of the present invention for these.For example, make the reflection part 70 of propagating the microwave reflection of coming in the waveguide 35 be called the parts of stub with regard to being not limited to the what is called shown in Fig. 4, for example, the reflection part 70 of the plate shape shown in the Fig. 8 that also can freely insert and extract at settings in the waveguide 35.
In addition, as shown in Fig. 9,10,, except that being connected with clean air supply source 60, also connect the exhaust unit 80 of vacuum pump etc. at the upstream side of clean air stream 61, between spatial portion 66 and process chamber 5, switch valve 62 is set in clean air stream 61 preferably simultaneously.For this plasma processing unit 1 ', substrate G is being implemented in the treatment process of plasma treatment, as shown in Figure 9, off switch valve 62 utilizes exhaust unit 80 simultaneously, makes spatial portion 66 become vacuum.Thus, just can not have the object of plasmaization in spatial portion 66, the power of the microwave of propagating in waveguide 35 just can not be wasted in the position of pipe 65.
On the other hand, in cleaning process, as shown in Figure 10, open switch valve 62, by clean air stream 61 and spatial portion 66, in process chamber 5, provide clean air from clean air supply source 60.Thus, just can in process chamber 5, provide the clean air that contains fluoro free radical and chlorine radical.
In addition, in execution mode above, although understand the situation of carrying out the amorphous silicon film forming as an example of plasma treatment, but the present invention can also be applicable to oxide-film film forming, polysilicon film forming, silane ammonification processing, silane hydrogenation treatment, oxide-film processing, silane oxidation processes, the etch processes except that other CVD processing except that the amorphous silicon film forming.In addition, the substrate G as process object is applicable to various substrates: substrates such as glass substrate, silicon substrate, dihedral, circle or the like.In addition, be not limited to the manufacturing of LCD device, go for the manufacturing of the flat-panel display device device outside organic EL display etc. and the manufacturing of semiconductor device and other various electronic installations.
(embodiment)
As embodiments of the invention, in the alumina tube that the inside of square waveguide is provided with, by NF as clean air 3And make its activation, etching SiO 2Film.Etching speed and clean air (NF in the case has been shown among Figure 11 3) the relation of flow.Similarly, illustrated among Figure 12 as clean air employing CF 4/ O 2Situation under etching speed and clean air (CF 4/ O 2) the relation of flow.No matter any situation in order to make the clean air activation, is utilized microwave feeding means, produces the microwave of 2.45GHz, is 1.5kW so that make the microwave power to the spatial portion output that forms in alumina tube.If the pressure in the process chamber is 4 holders (Torr), in clean air, mix the Ar of 500sccm.
As a comparative example, the NF that utilizes MKS company to make 3Long-range (remote control: remote) plasma, etching SiO 2Film.Illustrated among Figure 13 as clean air and adopted NF 3Situation under etching speed and clean air (NF 3) the relation of flow.In order to make the clean air activation, adopt annular (toroidal) plasma of 400kHz.If the pressure in the process chamber is 2 holders (Torr), in clean air, mix the Ar of 500sccm.
Its result can confirm at NF 3Situation under, the etching speed of the remote plasma that the present invention and MKS company make is identical.At CF 4Situation under, (the NF that makes with respect to MKS company 3Gas) be about 1/2 etching speed.But, because and NF 3Gas is compared, CF 4Gas is very cheap, so just can reduce operating cost significantly.In addition, the same with mode shown in the drawings, have under the situation of many waveguides, if carry out the activation of clean air by each waveguide, then also can generate fluoro free radical and chlorine radical in a large number, the remote plasma made from MKS company is identical, can clean with several times～tens times efficient.
Industrial utilizability
The present invention can be applicable to that for example CVD processes, etch processes.

Claims (23)

1. plasma processing apparatus, this plasma processing unit is supplied with the processing gas that is used for treatment substrate by the gas pipe arrangement of handling gas supply usefulness in process chamber, and propagate by the dielectric that the microwave propagated in waveguide is disposed on the inner face at described process chamber, make the described processing gaseous plasmaization that is provided in the described process chamber, the described substrate that disposes in described process chamber is implemented plasma treatment, and this plasma processing unit is characterised in that:
In described waveguide, be formed with the spatial portion that at least a portion is surrounded by the partition wall that constitutes by dielectric substance,
Be provided with by described spatial portion, clean air is provided to clean air stream in the described process chamber.
2. plasma processing apparatus according to claim 1 is characterized in that:
Described waveguide is set on the lid of the described process chamber of switch,
In the inside of described lid, dispose the part of described spatial portion and described clean air stream.
3. plasma processing apparatus according to claim 1 is characterized in that:
Described spatial portion is the inner space of the pipe that is made of dielectric substance.
4. plasma processing apparatus according to claim 1 is characterized in that:
The clean air supply source is connected with the upstream side of described stream,
Between described clean air supply source and described spatial portion, described stream is provided with switch valve.
5. plasma processing apparatus according to claim 4 is characterized in that:
With described spatial portion remain on described process chamber in identical pressure.
6. plasma processing apparatus according to claim 1 is characterized in that:
The clean air supply source is connected with the upstream side of described stream with exhaust unit,
Between described spatial portion and described process chamber, described stream is provided with switch valve.
7. plasma processing apparatus according to claim 1 is characterized in that:
Described clean air comprises any one in chlorine, fluorine gas, chlorine-containing compound gas, the fluorochemical gas.
8. plasma processing apparatus according to claim 1 is characterized in that:
Than described spatial portion, in the rear end side of described waveguide, being provided with can be with respect to the reflection part that is used for microwave reflection that freely inserts in the described waveguide and extract.
9. plasma processing apparatus according to claim 8 is characterized in that,
In the side of described waveguide, than described spatial portion, be formed with in rear end side and make microwave propagation arrive described dielectric slot,
Described reflection part is configured between described spatial portion and the described slot.
10. plasma processing apparatus according to claim 8 is characterized in that:
Described reflection part is configured in the position apart from described spatial portion λ g/4+ λ gn/2, wherein,
λ g is the wavelength in pipe of microwave,
N is the integer more than 0.
11. the method for operation of a plasma processing apparatus is characterized in that, comprising:
Treatment process, propagate by the dielectric that the microwave propagated in waveguide is disposed on the inner face at process chamber, supply with the gas pipe arrangement of usefulness and be provided to processing gaseous plasmaization in the process chamber and make, the substrate that disposes in described process chamber is implemented plasma treatment by handling gas; And
Cleaning process is provided to clean air in the process chamber, cleans in the described process chamber,
In described cleaning process,
By making clean air flow through at least a portion by the spatial portion that the partition wall that forms by dielectric substance surrounds, make the clean air activation,
Be provided in the described process chamber by the clean air that this has been activated, clean in the described process chamber.
12. method of operation according to claim 11 is characterized in that:
In described treatment process, there is not the gas that generates plasma at spatial portion.
13. method of operation according to claim 11 is characterized in that:
In described treatment process, making described spatial portion is vacuum.
14. method of operation according to claim 11 is characterized in that:
In described cleaning process, with described spatial portion remain on described process chamber in identical pressure.
15. method of operation according to claim 11 is characterized in that,
In described cleaning process,,, the reflection part of microwave reflection is inserted in the described waveguide in the rear end side of described waveguide than described spatial portion.
16. method of operation according to claim 15 is characterized in that:
In the side of described waveguide, than described spatial portion, form slot from microwave to described dielectric that propagate in rear end side,
Described reflection part is configured between described spatial portion and the described slot.
17. method of operation according to claim 15 is characterized in that:
Described reflection part is configured in the position apart from described spatial portion λ g/4+ λ gn/2, wherein,
λ g is the wavelength in pipe of microwave,
N is the integer more than 0.
18. method of operation according to claim 11 is characterized in that:
Described clean air comprises any one in chlorine, fluorine gas, chlorine-containing compound gas, the fluorochemical gas.
19. method of operation according to claim 11 is characterized in that:
In described cleaning process, be below the 2.7kW to the power of the microwave of described spatial portion output.
20. method of operation according to claim 19 is characterized in that:
Have many described waveguides, form described spatial portion in all described many waveguides or part of waveguide pipe, total microwave power of exporting to described spatial portion is more than the 15kW.
21. the method for operation according to each described plasma processing apparatus in the claim 1～10 is characterized in that, comprising:
Treatment process, propagate by the described dielectric that the microwave propagated in described waveguide is disposed on the inner face at described process chamber, and can make the gas pipe arrangement of supplying with usefulness by described processing gas be provided to processing gaseous plasmaization in the described process chamber, the described substrate that disposes in described process chamber is implemented plasma treatment; And
Cleaning process flows through described spatial portion by making clean air, makes the clean air activation, is provided in the described process chamber by the clean air that this has been activated, cleans in the described process chamber.
22. a method of plasma processing adopts each described plasma processing apparatus in the claim 1～10, it is characterized in that, comprising:
Cleaning process flows through described spatial portion by making clean air, makes the clean air activation, is provided in the described process chamber by the clean air that this has been activated, cleans in the described process chamber; And
Treatment process, propagate by the described dielectric that the microwave propagated in described waveguide is disposed on the inner face at described process chamber, and can make the gas pipe arrangement of supplying with usefulness by described processing gas be provided to processing gaseous plasmaization in the described process chamber, the described substrate that disposes in described process chamber is implemented plasma treatment.
23. the manufacture method of an electronic installation adopts each described plasma processing apparatus in the claim 1～10, it is characterized in that, comprising:
Cleaning process flows through described spatial portion by making clean air, makes the clean air activation, is provided in the described process chamber by the clean air that this has been activated, cleans in the described process chamber; And
Treatment process, propagate by the described dielectric that the microwave propagated in described waveguide is disposed on the inner face at described process chamber, and can make the gas pipe arrangement of supplying with usefulness by described processing gas be provided to processing gaseous plasmaization in the described process chamber, the described substrate that disposes in described process chamber is implemented plasma treatment.
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