CN101162282A - Photon crystal filter with high distinguishability - Google Patents
Photon crystal filter with high distinguishability Download PDFInfo
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- CN101162282A CN101162282A CNA2007100027979A CN200710002797A CN101162282A CN 101162282 A CN101162282 A CN 101162282A CN A2007100027979 A CNA2007100027979 A CN A2007100027979A CN 200710002797 A CN200710002797 A CN 200710002797A CN 101162282 A CN101162282 A CN 101162282A
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Abstract
The invention discloses a photon crystal filter with high resolution, comprises a photon crystal, and is characterized in that: the photon crystal filter also comprises an input waveguide formed on the photon crystal, a first output waveguide and a second output waveguide; the input waveguide, the first output waveguide and the second output waveguide are respectively provided with a sealed end. Two point defect cavities are provided between the first and the second output waveguides and the input waveguide, The peaks of photon crystals at the two ends of the first point defect cavity respectively moves outward for a first distance; and the peaks of photon crystals at the two ends of the second point defect cavity respectively moves outward for a second distance; the second distance is larger than the first distance. The invention enhances filtering efficiency, and can realize fine filtering, therefore, the invention is more suitable for optical integrating systems with high density.
Description
Technical field
The present invention relates to the photon crystal filter technology, the particularly a kind of high resolving power photon crystal filter that can realize the wavelength resolution of nanometer scale.
Background technology
There is the photonic band gap in the face in the photonic crystal panel of two dimension, and adopt present micro-processing technology to make than being easier to again, therefore by introducing various artificial defectives, can realize multiple optical device, for example photon crystal wave-guide, resonator cavity, end are to coupling mechanism and photon crystal filter etc.As present research focus, photon crystal filter can be widely used in a lot of fields, for example: fields such as the integrated path of photon, communication and quantum information processing.In known technology, many dissimilar photon crystal filters are designed and make by the scientific research personnel, for example Noda group is at document 1: proposed a kind of surface-emitting type photon crystal filter in " A.Chutinan; M.Mochizuki, M.Imada, and S.Noda; Appl.Phys.Lett.79; 2690 (2001). ", the light tunnelling of propagating in waveguide enters adjacent point defect chamber, Vertical Launch and reception in the chamber then.But owing to exist very big technical barrier at vertical direction received radiation light, this wave filter is applied in the middle of being difficult in actual integrated optical circuit.Another technology is a photon crystal filter in the plane, in the middle of this technology, the light that tunnelling enters resonator cavity enters adjacent waveguide by coupling, is received in the horizontal direction then, this method more helps in actual central application, thereby is subjected to paying close attention to widely.For example Noda group is at document 2: disclosed technology proof is utilized the retroactive effect of heterojunction boundary in " H.Takano; Y.Akahane; T.Asano; and S.Noda; Appl.Phys.Lett.84; 2226 (2004). ", thus the filtering of a plurality of wavelength of the high efficiency realization of photonic crystal that can the cascade different lattice constants.Yet the distance of optimizing resonator cavity and heterojunction boundary is a quite complicated job, this optimization is for realizing that retroactive effect is again considerable, and in the middle of the application of reality, also must introduce curved waveguide, and this curved waveguide can be introduced quite serious loss in the middle of the photonic crystal panel of bidimensional.Again for example Notomi group at document 3: disclosed technology in " A.Shinya; S.Mitsugi; E.Kuramochi; and M.Notomi; Opt.Express 13; 4202 (2005). " propose to utilize the width of the regulating waveguide mode as feedback, but still there is the too low deficiency of resolution in this technology.
Summary of the invention
The objective of the invention is to overcome the deficiencies in the prior art, a kind of high-resolution photon crystal filter that can realize the nanometer scale wavelength resolution is provided.
The technical scheme that the present invention takes is as follows:
A kind of high-resolution photon crystal filter comprises a photonic crystal, the input waveguide that on this photonic crystal, forms, first output waveguide and second output waveguide, and an end of described input waveguide, first output waveguide and second output waveguide seals.
In technique scheme, further, also be included at least one the point defect chamber between described first, second output waveguide and the described input waveguide.
In technique scheme, further, described input waveguide, first output waveguide and second output waveguide all are the linear pattern waveguides that line defect forms, and are parallel to each other.
In technique scheme, further, two point defect chambeies are arranged between described first, second output waveguide and described input waveguide.
In technique scheme, further, described first, second output waveguide is positioned at a side of place, the center straight line of described first point defect and second point defect, and described input waveguide is positioned at the opposite side of described straight line.
In technique scheme, further, first distance is outwards moved on the photonic crystal summit at two ends, the first point defect chamber respectively, and the photonic crystal summit at two ends, the second point defect chamber is outside mobile second distance respectively, and described second distance is greater than first distance.
In technique scheme, further, the described first point defect chamber is identical with the defective number in the second point defect chamber.
In technique scheme, further, described first point defect and second point defect are symmetrically located at the both sides of the vertical straight line of described input waveguide, and described first, second output waveguide is symmetrically located at the both sides of the vertical straight line of described input waveguide.
In technique scheme, further, the input port end of the endpiece of described first, second output waveguide and described input waveguide is to be ground into optical flat.
A kind of high-resolution two-dimensional flat plate photon crystal filter, comprise a two-dimensional flat plate photonic crystal, the input waveguide that forms on this photonic crystal, first output waveguide and second output waveguide, an end of described input waveguide, first output waveguide and second output waveguide seals.
Further, the two-dimensional flat plate photon crystal filter also is included at least one the point defect chamber between described first, second output waveguide and the described input waveguide.
Further, the described input waveguide of two-dimensional flat plate photon crystal filter, first output waveguide and second output waveguide all are the linear pattern waveguides that line defect forms, and are parallel to each other.
Further, the two-dimensional flat plate photon crystal filter has two point defect chambeies between described first, second output waveguide and described input waveguide.
Further, described first, second output waveguide of two-dimensional flat plate photon crystal filter is positioned at a side of place, the center straight line of described first point defect and second point defect, and described input waveguide is positioned at the opposite side of described straight line.
Further, first distance is outwards moved on the photonic crystal summit at the two ends, the first point defect chamber of two-dimensional flat plate photon crystal filter respectively, the photonic crystal summit at two ends, the second point defect chamber is outside mobile second distance respectively, and described second distance is greater than first distance.
Further, the described first point defect chamber of two-dimensional flat plate photon crystal filter is identical with the defective number in the second point defect chamber.
Further, the both sides that described first point defect of two-dimensional flat plate photon crystal filter and second point defect are symmetrically located at the vertical straight line of described input waveguide, described first, second output waveguide is symmetrically located at the both sides of the vertical straight line of described input waveguide.
Further, the input port end of the endpiece of described first, second output waveguide of two-dimensional flat plate photon crystal filter and described input waveguide is to be ground into optical flat.
Compared with prior art, the invention has the advantages that:
1. the present invention has adopted a kind of new feedback system, avoids introducing producing the very curved waveguide of lossy, has improved filtration efficiency greatly.
2. by changing the size of resonator cavity, can realize the meticulous filtering of two wavelength, and the interval of these two wavelength very little be 1.5 nanometers only, quality factor is approximately about 1000 much at one.
3. the present invention is fit to be applied in the middle of the highdensity optics integrated system more.
Description of drawings
Fig. 1 is the soi structure synoptic diagram of photonic crystal in one embodiment of the invention; Wherein, the superiors represent silicon thin film, and burial layer silicon dioxide is represented in the middle layer, and orlop is represented silicon substrate;
Fig. 2 is a two-dimensional flat plate photon crystal filter sectional view in one embodiment of the invention, wherein filled circles is represented airport, all the other represent silicon fiml, C1 and C2 represent the first point defect resonator cavity and the second point defect resonator cavity respectively, Port3, Port1 and Port2 represent input waveguide and first, second output waveguide of photon crystal filter respectively.Transverse axis X and longitudinal axis Y represent length respectively;
Seeing through that Fig. 3 (a) expression first output waveguide Port1 measures composed;
Seeing through that Fig. 3 (b) expression second output waveguide Port2 measures composed;
Fig. 4 (a) adopts the TE-like of the first output waveguide Port1 of finite time-domain difference method calculating to see through spectrum;
Fig. 4 (b) adopts the TE-like of the second output waveguide Port2 of finite time-domain difference method calculating to see through spectrum;
Embodiment
Below in conjunction with the drawings and specific embodiments the present invention is described in further detail:
As shown in Figure 1, present embodiment is that example illustrates the present invention with the two-dimensional flat plate photon crystal filter.(English full name is Silicon on Insulator at SOI such as electron-beam exposure system in the present embodiment employing, abbreviation SOI) processes photon crystal device on the substrate, the silicon film thickness of SOI sample is such as being 235 nanometers, the burial layer silicon dioxide thickness is such as being 375 nanometers, orlop is a silicon substrate, and the gross thickness of whole substrate is 0.5 millimeter.Employing such as photoresist PMMA495 as etching mask, this photoresist has good exposure characteristics and resolution, the Raith150 electron-beam exposure system that use is produced such as German Raith company is defined in the photonic crystal pattern of triangular crystal lattice airport on the photoresist, and the accelerating potential of use is such as being 10 kilovolts.Use the method such as inductively coupled plasma (ICP, English full name are Inductively Coupled Plasma) etching then, etching gas is such as being SF
6And C
4F
8, the photonic crystal pattern on the photoresist PMMA495 is transferred on the silicon thin film on the SOI, wherein SF
6Gas is as the gas of etch silicon, and C
4F
8Gas mainly plays passivation, can produce the good airport of steepness like this.Insert loss in order further to reduce, adopt scribing machine to scratch in the input and output waveguide both sides of this wave filter, utilize the method for chemically mechanical polishing that input and output waveguide two ends are ground to form optical flat then, thereby can reduce the insertion loss greatly, the silicon dioxide of last burial layer erodes by hydrofluorite, can obtain a kind of air bridge architecture.
The photon crystal filter of present embodiment is made by above-mentioned method.This photon crystal filter is made up of two point defect chambeies and three photon crystal wave-guides, is respectively first, second point defect chamber, input waveguide, first, second output waveguide.As shown in Figure 2, Port3, Port1 and Port2 represent input waveguide, first output waveguide and second output waveguide of present embodiment respectively, and these waveguides are the line defect formation along Γ-K direction.In order to reduce the insertion loss of wave filter, lay respectively at the delivery outlet end of first, second output waveguide of wave filter both sides and the input port end of input waveguide among Fig. 2 and be ground into optical flat; C1 and C2 represent the first point defect chamber and the second point defect chamber of this wave filter respectively, two resonator cavitys just, and C1 and C2 are made up of the airport of three disappearances respectively.Input waveguide, first output waveguide and second output waveguide all are the linear pattern waveguides that line defect forms, and these waveguides are parallel to each other, and an end of each waveguide seals.First, second output waveguide is positioned at a side of place, the center straight line of first point defect and second point defect, and input waveguide is positioned at the opposite side of described straight line.First point defect and second point defect are symmetrically located at the both sides of stating the vertical straight line of input waveguide, and first, second output waveguide is symmetrically located at the both sides of the vertical straight line of input waveguide.The airport at the first point defect chamber and two ends, the second point defect chamber has outwards moved 10 nanometers and 20 nanometers from the origin-location along x direction symmetry respectively, increased the area in two point defect chambeies like this, and the area in the second point defect chamber is greater than the area in the first point defect chamber.The airport at two ends, minute movement point defect chamber (resonator cavity) helps the light in the local chamber, makes in the chamber light intensity according to Gaussian distribution, and then improves the quality factor in the chamber.In addition, because the variation of cavity length, slight variation also can take place in the resonant wavelength in two chambeies, even on Electronic Speculum figure, also be difficult in the middle of actual by being observed visually the difference of these two resonator cavity sizes, but in the middle of the measurement of the optical property of reality, can observe the difference of its optical characteristics.On the x direction, the border of input waveguide Port3 is 4a to the distance at adjacent two resonator cavitys (i.e. the first point defect chamber and the second point defect chamber) center, and a is the grating constant of this two-dimensional flat plate photonic crystal.In the middle of present embodiment, the grating constant of photonic crystal and the aperture of airport are respectively 430 nanometers and 145 nanometers.The waveguide border is very important to choosing of resonator cavity center relative distance, in the middle of the present invention, select left side that the input waveguide border is positioned at the resonator cavity center (as shown in Figure 2, promptly on the x direction, the input waveguide boundary position is positioned at the negative direction at resonator cavity center), all be selected at the right side about above-mentioned position in the prior art, those skilled in the art can find that the present invention chooses the left side and more helps producing good filter effect, and can simplify miscellaneous optimizing process.Those skilled in the art should be clear, herein " left side " and " right side " are only in conjunction with Fig. 2 relative position to be described, can exchange in actual central " left side " and " right side ", also can be such as input waveguide on the right side, output waveguide also can be in the left side.Adopt semiconductor laser with tunable when surveying, wavelength variation range is from the 1500-1640 nanometer, be coupled to input waveguide by a single-mode lens fiber, output light is received by a similar single-mode fiber, by data collecting card data are compiled then, vertical scattered light is observed by an infrared CCD (English full name is Charge Coupled Device, is called for short CCD) camera.
See through spectrum filter effect of the present invention as can be seen by measuring.Regulate the incident light wavelength and measure the spectrum that sees through of Port1 and Port2 respectively, as shown in Figure 3, these two passages have been obtained filter effect.An independent resonance peak has appearred respectively in 1529.5 nanometers and 1531 nanometers, the resonant wavelength of these two wavelength corresponding first point defect chamber (resonator cavity) C1 of difference and second point defect chamber (resonator cavity) C2, Free Spectral Range at actual central these two passages is very wide, only there is an independent resonance peak in the scope from 1500 nanometers to 1640 nanometers, more helps the integrated of optical system.The interval at two peaks is 1.5 nanometers only, it will be recognized by those skilled in the art that the interval at respective resonant peak can also further dwindle if further reduce the difference of two cavity lengths, thereby can realize the wavelength-division multiplex of high density photon under integrated.The quality factor about respectively 1020 and 1090 at two peaks that experiment records, pairing halfwidth is respectively about 1.5 nanometers and 1.4 nanometers.
In order further to verify reliability of the present invention, adopt the finite time-domain difference method to calculate the resonant wavelength of two resonator cavitys, the refractive index of silicon flat board gets 3.4, and other parameter is as follows: grating constant 430 nanometers, radius 145 nanometers.As shown in Figure 4, under the aforementioned calculation condition, the TE-like of photonic crystal (class transverse electric wave) bandgap range is that 1130 nanometers are to 1590 nanometers, the resonant wavelength of resonator cavity chamber C1 and C2 is respectively 1521.8 nanometers and 1524.2 nanometers, the difference of the resonance wavelength that calculates is 2.4 nanometers, and the difference of the resonant wavelength that experiment is measured is approximately 1.5 nanometers, and what meet between the two is fine.The two can find that relatively the resonant wavelength of experiment measuring generally is higher than the analog value that Theoretical Calculation draws, this is because the aperture when making and the fluctuation of grating constant cause, it will be apparent to those skilled in the art that and when sample making, should further guarantee the precision and the accuracy of processing.
Observe light transmission situation of the present invention by the infrared CCD camera directly over the sample, light incides sample from Port3, when lambda1-wavelength is arranged on 1529.5 and 1531 nanometers, the light of incident waveguide is coupled to chamber C1 and C2 respectively up and down, appears at output waveguide Port1 and Port2 respectively in bright spot of exit ports.On the contrary, if when incident wavelength is not arranged on above-mentioned wavelength, corresponding bright spot can disappear from outgoing waveguide end Port1 and Port2, and strong scattered light appears at the terminal of incident waveguide Port3.In fact the signal observed of infrared CCD is light scattered light toward vertical direction when transmitting in the middle of photon crystal device, and this scattered light observation technology is to see through a kind of strong of spectrometry technology to replenish, and can fully verify validity of the present invention.
In the middle of the foregoing description, those skilled in the art should be clear, by changing corresponding design parameter, such as the cycle that changes photonic crystal, the silicon film thickness of airport radius and corresponding SOI flat board, can make the scope of this filter filtering more extensive, and tightly not be defined near communication band 1500 nanometers, thereby have good practicability and application prospect.
It should be noted last that above embodiment is only unrestricted in order to technical scheme of the present invention to be described.Although the present invention is had been described in detail with reference to embodiment, those of ordinary skill in the art is to be understood that, technical scheme of the present invention is made amendment or is equal to replacement, do not break away from the spirit and scope of technical solution of the present invention, it all should be encompassed in the middle of the claim scope of the present invention.
Claims (10)
1. a high-resolution photon crystal filter comprises a photonic crystal; It is characterized in that also be included in the input waveguide, first output waveguide and second output waveguide that form on this photonic crystal, described input waveguide, first output waveguide and second output waveguide respectively have a blind end.
2. according to the described high-resolution photon crystal filter of claim 1, it is characterized in that, also be included at least one the point defect chamber between described first, second output waveguide and the described input waveguide.
3. according to the described high-resolution photon crystal filter of claim 1, it is characterized in that described input waveguide, first output waveguide and second output waveguide are the linear pattern waveguides that line defect forms, and are parallel to each other.
4. according to the described high-resolution photon crystal filter of claim 2, it is characterized in that two point defect chambeies are arranged between described first, second output waveguide and described input waveguide.
5. according to the described high-resolution photon crystal filter of claim 4, it is characterized in that, described first, second output waveguide is positioned at a side of place, the center straight line of described first point defect and second point defect, and described input waveguide is positioned at the opposite side of described straight line.
6. according to claim 4 or 5 described high-resolution photon crystal filters, it is characterized in that, first distance is outwards moved on the photonic crystal summit at two ends, the first point defect chamber respectively, the photonic crystal summit at two ends, the second point defect chamber is outside mobile second distance respectively, and described second distance is greater than first distance.
7. according to the described high-resolution photon crystal filter of claim 6, it is characterized in that the described first point defect chamber is identical with the defective number in the second point defect chamber.
8. according to the described high-resolution photon crystal filter of claim 4, it is characterized in that, described first point defect and second point defect are symmetrically located at the both sides of the vertical straight line of described input waveguide, and described first, second output waveguide is symmetrically located at the both sides of the vertical straight line of described input waveguide.
9. according to claim 1,2,3,4,5 or 8 described high-resolution photon crystal filters, it is characterized in that the input port end of the endpiece of described first, second output waveguide and described input waveguide is the optical flat that is ground into.
10. according to the described high-resolution photon crystal filter of claim 1, it is characterized in that described photonic crystal is the two-dimensional flat plate photonic crystal.
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| CNB2007100027979A CN100504470C (en) | 2006-10-13 | 2007-01-30 | Photon crystal filter with high resolution |
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| CN200610113751 | 2006-10-13 | ||
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103107394A (en) * | 2012-12-27 | 2013-05-15 | 北京理工大学 | Thz band EMXT cavity filter based on micro-electromechanical system (MEMS) technique |
| WO2015035853A1 (en) * | 2013-09-13 | 2015-03-19 | 深圳大学 | Photonic crystal all-optical tunable filter |
| CN108152886A (en) * | 2016-12-05 | 2018-06-12 | 上海新微科技服务有限公司 | A kind of three beam splitters based on silicon photonic crystal |
| CN115016118A (en) * | 2022-06-30 | 2022-09-06 | 华南理工大学 | Construction method of unidirectional adjustable magneto-optical photonic crystal ring-shaped resonant cavity filter |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1184753C (en) * | 2001-08-08 | 2005-01-12 | 中国科学院物理研究所 | Photonic crystal wavelength division multiplexing device |
| JP3459827B2 (en) * | 2002-03-26 | 2003-10-27 | 科学技術振興事業団 | Two-dimensional photonic crystal optical multiplexer / demultiplexer |
| JP2004133233A (en) * | 2002-10-11 | 2004-04-30 | Seiko Epson Corp | Optical switch, apparatus for optical communication and optical communication system |
| JP4171326B2 (en) * | 2003-03-17 | 2008-10-22 | 国立大学法人京都大学 | Resonator and wavelength multiplexer / demultiplexer in two-dimensional photonic crystal |
| KR20050098077A (en) * | 2004-04-06 | 2005-10-11 | 한국전자통신연구원 | Multi-channel drop filter using photonic crystal |
| CN1609641A (en) * | 2004-11-23 | 2005-04-27 | 中山大学 | Two-dimensional photon crystal power separator |
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2007
- 2007-01-30 CN CNB2007100027979A patent/CN100504470C/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103107394A (en) * | 2012-12-27 | 2013-05-15 | 北京理工大学 | Thz band EMXT cavity filter based on micro-electromechanical system (MEMS) technique |
| CN103107394B (en) * | 2012-12-27 | 2015-09-02 | 北京理工大学 | A kind of based on MEMS technology THz wave band EMXT cavity body filter |
| WO2015035853A1 (en) * | 2013-09-13 | 2015-03-19 | 深圳大学 | Photonic crystal all-optical tunable filter |
| CN108152886A (en) * | 2016-12-05 | 2018-06-12 | 上海新微科技服务有限公司 | A kind of three beam splitters based on silicon photonic crystal |
| CN115016118A (en) * | 2022-06-30 | 2022-09-06 | 华南理工大学 | Construction method of unidirectional adjustable magneto-optical photonic crystal ring-shaped resonant cavity filter |
| CN115016118B (en) * | 2022-06-30 | 2023-08-22 | 华南理工大学 | Method for constructing unidirectional adjustable magneto-optical photonic crystal ring resonator filter |
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