CN101157452A - Method for preparing nano silicon carbide - Google Patents
Method for preparing nano silicon carbide Download PDFInfo
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- CN101157452A CN101157452A CNA2007100528597A CN200710052859A CN101157452A CN 101157452 A CN101157452 A CN 101157452A CN A2007100528597 A CNA2007100528597 A CN A2007100528597A CN 200710052859 A CN200710052859 A CN 200710052859A CN 101157452 A CN101157452 A CN 101157452A
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Abstract
The invention provides a preparation method of nanometer carborundum. The preparation method of the nanometer carborundum has the steps that: firstly, sundries are removed from plant cotton; secondly, analytically pure ganister sand is put into a plumbago pot, the plant cotton which is processed in the step (1) is arranged on the ganister sand, and the plumbago pot is covered; thirdly, the plumbago pot which is filled with the plant cotton and the ganister sand in the step two is put into a high temperature vacuum furnace which is vacuumized to 10 to 3 Pa and then is heated to 600 DEG C to 1000 DEG C, charing for 30 minutes is performed under heat preservation, siliconization for 150 to 180 minutes is preformed under heat preservation after being heated to 1400 DEG C-1500 DEG C, and then the temperature of the plumbago pot is descended to a normal temperature along with the high temperature vacuum furnace, therefore, the nanometer carborundum is produced, and the diameter of the carborundum is between 3nm to 15nm. The invention is characterized in that the plant cotton, in particular to the waste cotton, is used as the material, the plant cotton performs the charing and the siliconization under vacuum condition, and therefore the nanometer carborundum is produced. The invention can be applied to other animal fiber and plant fiber, in particular to waste animal fiber and plant fiber, so as to produce the nanometer carborundum. The technology of the invention is relatively simpler.
Description
Technical field
The present invention relates to prepare the novel method of nanometer silicon carbide, particularly relating to plant cotton is the feedstock production method of nanometer carborundum.
Background technology
Nanometer silicon carbide can be applicable to nano combined inserted tool, Wimet, heat-resistant and wear-resistant material, dispersion strengthened material, and lubricated dynamic bearing, crucible, refractory coating, heat-delivery surface coating, corrosion protection coating and microwave absorbing coating etc., wide application, market outlook are good.
The preparation method of nanometer carborundum has at present: microwave method, sol-gel method, chemical Vapor deposition process, energising heating vaporization, technology are comparatively complicated.The raw material of usefulness has at present: organometallic compound, resin, ultra-fine carbon black, ultra-fine SiO
2These raw materials mostly are synthetic, and cost is higher.
At present do not see with the plant cotton to be the report of feedstock production nanometer silicon carbide.
Summary of the invention
The object of the present invention is to provide a kind of preparation method of nanometer carborundum.
To achieve these goals, technical scheme of the present invention is: remove the foreign material in the plant cotton, plant cotton is placed in the plumbago crucible that silica flour is housed high temperature carbonization → silication in vacuum high temperature furnace again.
The preparation method of nanometer silicon carbide of the present invention, carry out according to the following step:
1), the foreign material in the removal plant cotton;
2), the analytical pure silica flour is put into plumbago crucible, will be placed on the silica flour through the plant cotton that step 1) was handled again, and crucible will be added a cover;
3), will adorn excellent crucible and put into vacuum high temperature furnace, be evacuated to 10
-3Be warming up to 600 ℃-1000 ℃ behind the Pa, be incubated charing in 30 minutes, be warming up to 1400 ℃-1500 ℃ insulations silication in 150-180 minute again, reduce to normal temperature with stove then, promptly make nanometer silicon carbide, the silicon carbide particle diameter is at 3-15nm.
Described plant cotton can be old and useless cotton or tail cotton.
The foreign material of the present invention in the method removal plant cotton that vibrates.
Technical characterstic of the present invention
1, be raw material with the especially waste and old cotton of plant cotton; 2, charing under vacuum condition → silicified plant cotton is prepared nanometer silicon carbide.
Present technique can be applicable to other animal and plant fiber, especially waste and old animal and plant fiber production nanometer silicon carbide.
Embodiment
Embodiment 1
Method of nanometer carborundum, carry out according to the following step:
1), with the foreign material in the method removal plant cotton (tail cotton) of vibration;
2), the analytical pure silica flour is put into plumbago crucible, will be placed on the silica flour through the plant cotton that step 1) was handled again, and crucible will be added a cover;
3) will adorn excellent crucible, again and put into vacuum high temperature furnace, be evacuated to 10
-3Be warming up to 600 ℃ behind the Pa, be incubated charing in 30 minutes, be warming up to 1400 ℃ of insulations silication in 180 minutes again, reduce to normal temperature with stove then, promptly make nanometer silicon carbide, the nanometer silicon carbide particle diameter of preparation is at 3-5nm.
Embodiment 2
Method of nanometer carborundum, carry out according to the following step:
1), removes foreign material in the waste and old plant cotton with the method for vibration;
2), the analytical pure silica flour is put into plumbago crucible, will be placed on the silica flour through the waste and old plant cotton that step 1) was handled again, and crucible is added a cover;
3) will adorn excellent crucible, again and put into vacuum high temperature furnace, be evacuated to 10
-3Be warming up to 1000 ℃ behind the Pa, be incubated charing in 30 minutes, be warming up to 1500 ℃ of insulations silication in 150 minutes again, reduce to normal temperature with stove then, promptly make nanometer silicon carbide, the nanometer silicon carbide particle diameter of preparation is at 10-15nm.
Claims (3)
1. the preparation method of nanometer silicon carbide is characterized in that carrying out according to the following step:
1), the foreign material in the removal plant cotton;
2), the analytical pure silica flour is put into plumbago crucible, will be placed on the silica flour through the plant cotton that step 1) was handled again, and crucible will be added a cover;
3), will adorn excellent crucible and put into vacuum high temperature furnace, be evacuated to 10
-3Be warming up to 600 ℃-1000 ℃ behind the Pa, be incubated charing in 30 minutes, be warming up to 1400 ℃-1500 ℃ insulations silication in 150-180 minute again, reduce to normal temperature with stove then, promptly make nanometer silicon carbide, the silicon carbide particle diameter is at 3-15nm.
2. the preparation method of nanometer silicon carbide as claimed in claim 1 is characterized in that described plant cotton is old and useless cotton or tail cotton.
3. the preparation method of nanometer silicon carbide as claimed in claim 1 is characterized in that with the foreign material in the method removal plant cotton of vibration.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100528597A CN100560486C (en) | 2007-07-30 | 2007-07-30 | A kind of preparation method of nanometer carborundum |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100528597A CN100560486C (en) | 2007-07-30 | 2007-07-30 | A kind of preparation method of nanometer carborundum |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101157452A true CN101157452A (en) | 2008-04-09 |
| CN100560486C CN100560486C (en) | 2009-11-18 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2007100528597A Expired - Fee Related CN100560486C (en) | 2007-07-30 | 2007-07-30 | A kind of preparation method of nanometer carborundum |
Country Status (1)
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| CN (1) | CN100560486C (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101746759A (en) * | 2010-02-11 | 2010-06-23 | 浙江工业大学 | Method for synthesizing silicon carbide nano wire by utilizing plant fiber |
| CN101850972A (en) * | 2010-06-21 | 2010-10-06 | 中国科学院山西煤炭化学研究所 | Method for preparing silicon carbide nano wires |
| CN101603207B (en) * | 2009-07-21 | 2011-11-09 | 中国地质大学（北京） | Method for preparing network branched silicon nitride single crystal nanostructure with high purity and high yield |
| CN102491334A (en) * | 2011-12-12 | 2012-06-13 | 西安工程大学 | Method for preparing nano SiC fibers by using abandoned cotton linter through template |
| CN102596802A (en) * | 2009-08-26 | 2012-07-18 | Lg伊诺特有限公司 | System and method for manufacturing silicon carbide pulverulent body |
| CN102958834A (en) * | 2011-05-18 | 2013-03-06 | 住友电气工业株式会社 | Silicon carbide powder and method for producing silicon carbide powder |
| CN104593746A (en) * | 2014-10-29 | 2015-05-06 | 北京工业大学 | 3C-SiC nanometer disc and preparation method thereof |
| CN113072069A (en) * | 2021-02-19 | 2021-07-06 | 南昌航空大学 | Carbide based on waste fiber textile and preparation method thereof |
-
2007
- 2007-07-30 CN CNB2007100528597A patent/CN100560486C/en not_active Expired - Fee Related
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101603207B (en) * | 2009-07-21 | 2011-11-09 | 中国地质大学（北京） | Method for preparing network branched silicon nitride single crystal nanostructure with high purity and high yield |
| CN102596802A (en) * | 2009-08-26 | 2012-07-18 | Lg伊诺特有限公司 | System and method for manufacturing silicon carbide pulverulent body |
| CN101746759A (en) * | 2010-02-11 | 2010-06-23 | 浙江工业大学 | Method for synthesizing silicon carbide nano wire by utilizing plant fiber |
| CN101746759B (en) * | 2010-02-11 | 2012-07-25 | 浙江工业大学 | Method for synthesizing silicon carbide nano wire by utilizing plant fiber |
| CN101850972A (en) * | 2010-06-21 | 2010-10-06 | 中国科学院山西煤炭化学研究所 | Method for preparing silicon carbide nano wires |
| CN101850972B (en) * | 2010-06-21 | 2012-10-03 | 中国科学院山西煤炭化学研究所 | Method for preparing silicon carbide nano wires |
| CN102958834A (en) * | 2011-05-18 | 2013-03-06 | 住友电气工业株式会社 | Silicon carbide powder and method for producing silicon carbide powder |
| CN102491334A (en) * | 2011-12-12 | 2012-06-13 | 西安工程大学 | Method for preparing nano SiC fibers by using abandoned cotton linter through template |
| CN104593746A (en) * | 2014-10-29 | 2015-05-06 | 北京工业大学 | 3C-SiC nanometer disc and preparation method thereof |
| CN104593746B (en) * | 2014-10-29 | 2017-07-14 | 北京工业大学 | One kind prepares 3C SiC nanometer plates, preparation method |
| CN113072069A (en) * | 2021-02-19 | 2021-07-06 | 南昌航空大学 | Carbide based on waste fiber textile and preparation method thereof |
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| Publication number | Publication date |
|---|---|
| CN100560486C (en) | 2009-11-18 |
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Granted publication date: 20091118 Termination date: 20110730 |