CN101154704A - PMS-PZN-PZT piezoelectricity thick-film composite material - Google Patents
PMS-PZN-PZT piezoelectricity thick-film composite material Download PDFInfo
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- CN101154704A CN101154704A CNA2006100689556A CN200610068955A CN101154704A CN 101154704 A CN101154704 A CN 101154704A CN A2006100689556 A CNA2006100689556 A CN A2006100689556A CN 200610068955 A CN200610068955 A CN 200610068955A CN 101154704 A CN101154704 A CN 101154704A
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Abstract
The invention discloses a piezoelectricity thick film composite material for medical apparatus and other transducers. The wide application and development of the ultrasonic technique on medical diagnosis, industrial non-destructive detection and hydrophone put forward higher demands for performance of transducer material. The aim is to provide the piezoelectricity thick film material which has both advantages of body material and film material and larger driving force than that of the film, obvious piezoelectricity effect, low working voltage, wide applicable frequency range and compatibility with semiconductor integrated circuit. Preparation according to proportion (moore ratio) of material: Pb3O4 1.9mol, ZrO22.4mol, TiO2 2.4mol, MnO2 0.12mol, Sb2O30.12mol, ZnO0.28mol, Nb2O50.28, SrCO30.3mol. The preparation method is that the materials and little inorganic adhesive are taken to add into an organic carrier and stirred so that the powder is evenly dispersed into solution and forms a slip. The slip is brushed on the base plate with plated electrode, and the thick film is formed by drying and burning. As a result, the piezoelectricity thick film material is prepared by plating electrode and polarization. The invention is not limited to the embodiment and mainly applied in medical apparatus and other transducers.
Description
Technical field
The invention discloses a kind of piezoelectricity thick-film composite material that is used for Medical Devices and other transducer.
Background technology
Along with sensing technology medical science and field of biology use growing, the piezoelectric transducer technology becomes a research focus in this field gradually.The piezoelectric sensing transducer has very big potentiality with characteristics such as it are responsive fast, cost is low in molecular biology, medical diagnosis on disease and fields such as treatment, new drug development.Ultrasonic technology aspect medical diagnosis, industrial nondestructive testing and hydrophone extensive use and development to the demands for higher performance of transducer material.
The research of piezoelectric membrane starts from late 1960s, becomes heat subject after the eighties, and the U.S. maintains the leading position always.Compare its advantage with block materials: size is little, in light weight, operating voltage is low, with the semiconductor integrated circuit compatibility.Its shortcoming: film and interelectrode interfacial effect have influenced the performance of device, are subject to the influence of factors such as extraneous electricity, light, heat and power, and the actuating force that film produces is less, and application is restricted.
Summary of the invention
Through experimental summary for many years, the applicant has developed PMS-PZN-PZT quaternary system piezoelectricity thick-film composite material, is mainly used in Medical Devices and other transducer.
The technical solution used in the present invention is: a kind of PMS-PZN-PZT piezoelectricity thick-film composite material that is used for Medical Devices and transducer, this product is made up of substrate, electrode and functive three parts, its functive compositing formula: Pb
0.95Sr
0.05[(Mn
1/3Sb
2/3)
x(Zn
1/3Nb
2/3)
y(Zr
aTi
b)
z] O
3, x+y+z=1 wherein, a+b=1.
Described x is 0～1, and y is 0～1, and z is 0～1, and a/b is near 53/47.
Described x is 0～0.2, and y is 0～0.2, and z is 0.6～1, a/b=1.
Described x=0.06, y=0.14, z=0.8, a=b=0.5.
PMS-PZN-PZT piezoelectric thick material of the present invention has been taken into account the advantage of body material and thin-film material, compare with its film and to have bigger driving force, more tangible piezoelectric effect, and have that operating voltage is low, the frequency of utilization wide ranges, with advantage such as semiconductor integrated circuit compatibility.
Embodiment
Preparation 6mol functive, x=0.06, y=0.14, z=0.8, a=b=0.5, Pb
3O
4Be 1.9mol, ZrO
2Be 2.4mol, TiO
2Be 2.4mol, MnO
2Be 0.12mol, Sb
2O
3Be 0.12mol, ZnO is 0.28mol, Nb
2O
5Be 0.28mol, SrCO
3Be 0.3mol.Its manufacture method is to get above-mentioned raw materials and a spot of inorganic binder to add in an amount of organic carrier, through stirring, powder is distributed in the solution equably, forms slurry.The above-mentioned slurry of printing on the substrate that plates bottom electrode, drying, sintering form thick film again, plate electrode again, promptly make the PMS-PZN-PZT piezoelectricity thick-film composite material through polarization.
Be not limited to an above-mentioned embodiment.
Claims (5)
1. a latest generation new technology PMS-PZN-PZT piezoelectricity thick-film composite material that is mainly used in Medical Devices and transducer is characterized by this product and is made up of substrate, electrode and functive three parts, and described function of tonic chord body is: PMS, PZN and PZT.
2. it is Pb that PMS-PZN-PZT piezoelectricity thick-film composite material according to claim 1 is characterized by the functive compositing formula
0.95Sr
0.05[(Mn
1/3Sb
2/3)
x(Zn
1/3Nb
2/3)
y(Zr
aTi
b)
z] O
3, x+y+z=1 wherein, a+b=1.
3. PMS-PZN-PZT piezoelectricity thick-film composite material according to claim 2 is characterized by that x is 0～1 in the described functive prescription, and y is 0～1, and z is 0～1, and a/b is near 53/47.
4. PMS-PZN-PZT piezoelectricity thick-film composite material according to claim 3 is characterized by that x is 0～0.2 in the described functive prescription, and y is 0～0.2, and z is 0.6～1, a/b=1.
5. PMS-PZN-PZT piezoelectricity thick-film composite material according to claim 4 is characterized by x=0.06 in the described functive prescription, y=0.14, z=0.8, a=b=0.5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006100689556A CN101154704A (en) | 2006-09-27 | 2006-09-27 | PMS-PZN-PZT piezoelectricity thick-film composite material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006100689556A CN101154704A (en) | 2006-09-27 | 2006-09-27 | PMS-PZN-PZT piezoelectricity thick-film composite material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101154704A true CN101154704A (en) | 2008-04-02 |
Family
ID=39256228
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2006100689556A Pending CN101154704A (en) | 2006-09-27 | 2006-09-27 | PMS-PZN-PZT piezoelectricity thick-film composite material |
Country Status (1)
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| CN (1) | CN101154704A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102515759A (en) * | 2011-12-12 | 2012-06-27 | 中国振华集团红云器材厂 | High-electromechanical coupling coefficient piezoelectric ceramic material and manufacturing method thereof |
| CN102863220A (en) * | 2012-09-18 | 2013-01-09 | 天津大学 | Method for preparing PZT-based piezoelectric ceramic thick film material of silver electrode through low-temperature cofiring |
| CN102924082A (en) * | 2012-10-22 | 2013-02-13 | 南京航空航天大学 | Manganese-doped niobium nickel-lead zirconate titanate piezoelectric ceramic and preparation method thereof |
| CN111704461A (en) * | 2020-05-22 | 2020-09-25 | 江苏波速传感器有限公司 | Formula and preparation method of high Curie point low temperature co-fired piezoelectric ceramic |
-
2006
- 2006-09-27 CN CNA2006100689556A patent/CN101154704A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102515759A (en) * | 2011-12-12 | 2012-06-27 | 中国振华集团红云器材厂 | High-electromechanical coupling coefficient piezoelectric ceramic material and manufacturing method thereof |
| CN102863220A (en) * | 2012-09-18 | 2013-01-09 | 天津大学 | Method for preparing PZT-based piezoelectric ceramic thick film material of silver electrode through low-temperature cofiring |
| CN102863220B (en) * | 2012-09-18 | 2014-02-19 | 天津大学 | Method for preparing PZT-based piezoelectric ceramic thick film material of silver electrode through low-temperature cofiring |
| CN102924082A (en) * | 2012-10-22 | 2013-02-13 | 南京航空航天大学 | Manganese-doped niobium nickel-lead zirconate titanate piezoelectric ceramic and preparation method thereof |
| CN111704461A (en) * | 2020-05-22 | 2020-09-25 | 江苏波速传感器有限公司 | Formula and preparation method of high Curie point low temperature co-fired piezoelectric ceramic |
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| PB01 | Publication | ||
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| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20080402 |