CN101153104B - Material with controlled infrared emissivity and method of producing the same - Google Patents

Material with controlled infrared emissivity and method of producing the same Download PDF

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Publication number
CN101153104B
CN101153104B CN2007100456419A CN200710045641A CN101153104B CN 101153104 B CN101153104 B CN 101153104B CN 2007100456419 A CN2007100456419 A CN 2007100456419A CN 200710045641 A CN200710045641 A CN 200710045641A CN 101153104 B CN101153104 B CN 101153104B
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China
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infrared
resin
styrene
thing
toluene
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Expired - Fee Related
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CN2007100456419A
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CN101153104A (en
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褚轶雯
汪长春
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Fudan University
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Fudan University
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Abstract

The present invention belongs to the technological field of functional materials, and in particular relates to a material of controllable rate of infrared emission and a preparation method thereof. In the present invention, the crystals of halogen salt category of infrared transparence and of different particle sizes are used as dispersant; the resin of infrared transparence is used as dispersion medium; the adjustment of crystal type, particle size and concentration can be used to control the micro structure of infrared transparent material, so as to control the rate of infrared emission of the material. The method is simple and effective; the preparation is convenient; and the method is a common preparation method of materials of controllable rate of infrared emission.

Description

Material that a kind of infrared emittance is controlled and preparation method thereof
Technical field
The invention belongs to technical field of function materials, be specifically related to controlled material of a kind of infrared emittance and preparation method thereof.
Technical background
Along with the widespread use of infrared detection technique in military field, the infrared camouflage technology more and more is subjected to countries in the world government and scientific research personnel's attention as the effective means that improves weaponry system and strategic objective viability.The thermal imaging reconnaissance system mainly comes recognition objective by the yield of radiation difference at infrared band between measurement target and the background. and the purpose of infrared camouflage is exactly by changing the yield of radiation of target, the ir radiation brightness that makes target and background in the time as much as possible and background luminance change and be consistent, make infrared reconnaissance system be difficult to from background, distinguish target.According to the thermal radiation theory, the target infrared yield of radiation depends on thermodynamic temperature and two factors of slin emissivity of target.Therefore, developing the material that a kind of emittance is low, heat-proof quality is good has great importance to infrared camouflage.
The research of before this low-launch-rate infrared camouflage material mainly is the surface albedo of managing directly to improve material, and research contents concentrates in the screening and modification to material itself.Yet, because the structure of material itself and the restriction and the technical problem of mechanical and physical performance can't find a kind of double ideal material that can satisfy infrared camouflage and engineering practicality.
Utilizing backscattering effect development low-launch-rate infrared camouflage material is a kind of brand-new technology approach, its dominant mechanism is by infrared-transparent material is carried out structure regulating, form little air chamber cavity at material internal, make incident beam in the transmission course of material internal, multiple reflection take place, thereby improve the comprehensive reflecting effect of material.In certain scope, when diameter of particle in the coating and coat-thickness fixedly the time, the volumetric concentration of micropore increases, and the reflectivity of coating increases, and infrared emittance reduces.The change of material microstructure can reduce the infrared emittance of material.
Summary of the invention
The object of the present invention is to provide controlled material of a kind of infrared emittance and preparation method thereof.
The present invention uses the halogen crystalloid with infrared transparent of variable grain size for disperseing thing, resin with infrared transparent is a dispersion medium, control the microstructure of this infrared-transparent material by regulating kind of crystalline, granular size and concentration, thus the infrared emittance of control material.The infrared band scope is 800cm -1-2600cm -1
The controlled material of infrared emittance that the present invention proposes, form by resin, solvent and dispersion thing, wherein, resin is styrenic block copolymer and derivative thereof, as SBS (styrene-butadiene-styrene triblock polymer), SIS (terblock polymer with styrene isoprene styrene blocks) or SEBS (Hydrogenated SBS); Solvent is a toluene; Disperseing thing is halogen crystalloid particulate (as Potassium Bromide, Sodium Bromide or sodium-chlor), and the weight percent content of various materials is: resin 5~15%, disperse thing 10~50%, and surplus is a solvent toluene.The present invention disperses species, granular size and add-on, the microvoid structure of may command material, thereby the infrared emittance of control material by changing.The infrared emission that is material is controlled in the 60%--90% scope.
Selected resin is a styrenic block copolymer, and the infrared transparent of material and heat resistance are guaranteed.
Select for use the halogen crystalloid for disperseing thing, this dispersion thing has good infrared transparent.Disperse the granular size of thing to be advisable at 30~200 μ m.
The controlled preparation methods of the infrared emittance that the present invention proposes is as follows: the weight percent by each constituent materials of the present invention takes by weighing resin, disperses thing and solvent, with resin and solvent stirring and dissolving at room temperature, is configured to solution.Get the dispersion thing of required size with the sieve sieve, should disperse composition granule to add in the described solution, stir.After bubble in the liquid to be mixed drains, pour in the mould, at room temperature dry, obtain the translucent coating of turning white, be required infrared emission material.
Characteristics of the present invention are not change the composition of material, and the microstructure that only changes material just can obtain infrared emittance at 60~90% material, compare with additive method that to have a raw material single, easy and simple to handle, the advantage that infrared emittance is controlled.
Embodiment
Embodiment 1:
Take by weighing 10 gram SEBS powder, put into wide-necked bottle, add 80 gram toluene in bottle, at room temperature stirring and dissolving obtained the toluene solution of SEBS after 24 hours.Getting particle diameter with the sieve sieve is 35 μ m Potassium Bromide particles.In the SEBS toluene solution, add the Potassium Bromide particle that 10 gram particles directly are 35 μ m gradually, stir while adding, bromizate k particle and in solution, be uniformly dispersed.After bubble in the liquid to be mixed drains, pour in the mould, at room temperature dry 48 hours, obtain the translucent coating of turning white.Its emittance is 90%.
Embodiment 2:
Take by weighing 10 gram SBS powder, put into wide-necked bottle, add 70 gram toluene in bottle, at room temperature stirring and dissolving obtained the toluene solution of SEBS after 20 hours.Getting particle diameter with the sieve sieve is 50 μ m Potassium Bromide particles.In the SBS toluene solution, add the Potassium Bromide particle that 20 gram particles directly are 50 μ m gradually, stir while adding, bromizate k particle and in solution, be uniformly dispersed.After bubble in the liquid to be mixed drains, pour in the mould, at room temperature dry 48 hours, obtain the translucent coating of turning white.Its emittance is 85%.
Embodiment 3:
Take by weighing 5 gram SIS powder, put into wide-necked bottle, add 65 gram toluene in bottle, at room temperature stirring and dissolving obtained the toluene solution of SIS after 24 hours.Get particle diameter with the sieve sieve and be respectively 100 μ m Potassium Bromide particles.In the SIS toluene solution, add the Potassium Bromide particle that 30 gram particles directly are 100 μ m gradually, stir while adding, bromizate k particle and in solution, be uniformly dispersed.After bubble in the liquid to be mixed drains, pour in the mould, at room temperature dry 48 hours, obtain the translucent coating of turning white.Its emittance is 75%.
Embodiment 4:
Take by weighing 10 gram SEBS powder, put into wide-necked bottle, add 40 gram toluene in bottle, at room temperature stirring and dissolving obtained the toluene solution of SEBS after 24 hours.Get particle diameter with the sieve sieve and be respectively 100 μ m Potassium Bromide particles.In the SEBS toluene solution, add the Potassium Bromide particle that 50 gram particles directly are 100 μ m gradually, stir while adding, bromizate k particle and in solution, be uniformly dispersed.After bubble in the liquid to be mixed drains, pour in the mould, at room temperature dry 48 hours, obtain the translucent coating of turning white.Its emittance is 65%.
Embodiment 5:
Take by weighing 10 gram SEBS powder, put into wide-necked bottle, add 90 gram toluene in bottle, at room temperature stirring and dissolving obtained the toluene solution of SEBS after 24 hours.Get particle diameter with the sieve sieve and be respectively 100 μ m sodium chloride particles.Adding 50 gram particles gradually in the SEBS toluene solution is the sodium chloride particle of 100 μ m directly, stirs while adding, and sodium chloride particle is uniformly dispersed in solution.After bubble in the liquid to be mixed drains, pour in the mould, at room temperature dry 48 hours, obtain the translucent coating of turning white.Its emittance is 63%.
Embodiment 6:
Take by weighing 10 gram SEBS powder, put into wide-necked bottle, add 90 gram toluene in bottle, at room temperature stirring and dissolving obtained the toluene solution of SEBS after 24 hours.Get particle diameter with the sieve sieve and be respectively 200 μ m Sodium Bromide particles.In the SEBS toluene solution, add the Sodium Bromide particle that 50 gram particles directly are 100 μ m gradually, stir while adding, bromizate the sodium particle and in solution, be uniformly dispersed.After bubble in the liquid to be mixed drains, pour in the mould, at room temperature dry 48 hours, obtain the translucent coating of turning white.Its emittance is 61%.

Claims (2)

1. the material that infrared emittance is controlled is characterized in that being made up of resin, solvent and dispersion thing, and wherein, resin is styrenic block copolymer and derivative thereof, and solvent is a toluene; Disperseing thing is the Potassium Bromide crystal fine particle, and disperseing the granular size scope of thing is 20~200 μ m; The weight percent content of various materials is: resin 5~15%, disperse thing 10~50%, and surplus is a solvent toluene.
2. the controlled material of infrared emittance according to claim 1 is characterized in that described resin is styrene-butadiene-styrene triblock polymer, terblock polymer with styrene isoprene styrene blocks or hydrogenated styrene-butadiene-styrene triblock polymer.
CN2007100456419A 2007-09-06 2007-09-06 Material with controlled infrared emissivity and method of producing the same Expired - Fee Related CN101153104B (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101696260B (en) * 2009-10-12 2011-06-22 东南大学 Polarimetric polyurethane-urea infrared low emissivity material and preparation method thereof
CN113651624B (en) * 2021-09-22 2023-03-14 武汉理工大学 Heat insulation coating with low thermal infrared emissivity and preparation method thereof

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4916014A (en) * 1987-10-30 1990-04-10 Paul Weber I.R. reflecting paint

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4916014A (en) * 1987-10-30 1990-04-10 Paul Weber I.R. reflecting paint

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