CN101142677B - Device and method for depositing passive structure on target - Google Patents
Device and method for depositing passive structure on target Download PDFInfo
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- CN101142677B CN101142677B CN2005800426893A CN200580042689A CN101142677B CN 101142677 B CN101142677 B CN 101142677B CN 2005800426893 A CN2005800426893 A CN 2005800426893A CN 200580042689 A CN200580042689 A CN 200580042689A CN 101142677 B CN101142677 B CN 101142677B
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Abstract
Method and apparatus for direct writing of passive structures having a tolerance of 5% or less in one or more physical, electrical, chemical, or optical properties. The present apparatus is capable of extended deposition times. The apparatus may be configured for unassisted operation and uses sensors and feedback loops to detect physical characteristics of the system to identify and maintain optimum process parameters.
Description
The cross reference of related application
The application requires U.S. Provisional Patent Application sequence number 60/635,848 preference, denomination of invention is " Solution-Based Aerosol Jetting ofPassive Electronic Structures ", and the applying date is on December 13rd, 2004, and its specification is hereby incorporated by.
Technical field
The application is usually directed to the direct deposit field of passive structures.More specifically, the application relate to need not mask, on plane or on-plane surface target the accurate medium-scale passive structures of deposit field, focus on the deposit of accurate electric resistance structure.
Background technology
Notice that argumentation has subsequently related to some open files and reference paper.The argumentation that provides these open files is used for improving more the background of the principles of science, and is not to be interpreted as admitting that these open files are to be used for the prior art that patentability is judged purpose.
There is the multiple method that is used for deposition of passive structures, yet includes but not limited to that in deposit on multiple electronics and microelectronics target in the passive structures of resistance or electric capacity, thick film and film process play significant feature.As an example, thick film technology is used the little electronic pastes to 100 microns of silk-screen printing technique deposit live width usually.The film process that is used for the printed electronics structure comprises vapor phase deposition technique, such as chemical vapor deposition and laser-assisted chemical vapor deposition, and the physical deposition technology, such as sputter and evaporation.
U.S. Patent No. 4938997 has disclosed a kind of method that is used for making thick-film resistor on ceramic substrate, has compatible mutually with the required tolerance of microelectronic circuit.In this method, with ruthenium base resistor material wire mark sintering to substrate and in surpassing 850 ℃ temperature.U.S. Patent No. 6709944 has disclosed a kind of method of making passive structures on flexible substrate, by means of ion bombardment to activate substrate surface as polyimides, formation can with another deposition materials, thereby for example the carbon of the graphite sample of titanium combination zone forms passive structures.U.S. Patent No. 6713399 has disclosed a kind of embedded method of resistor of making on printed circuit board.This method uses thin-film technique to form the embedded passive structure in the groove that is formed in the conductive layer.The method of U.S. Patent No. 6713399 has disclosed a kind of technology that reduces the big resistance variations seen in the embedded resistor of polymer thick film.
Well developed although make the thick film and the film process of passive structures, these technologies may be unsuitable for some deposition applications.Some defectives of thick-film technique are big relatively minimum feature, and it is the demand of the high-temperature process of the demand used of technical characteristic, mask and deposition materials.The defective of typical thin-film technique comprises demand, vacuum atmosphere and the multistep photoetching process of using mask.
Compare with the conventional method of passive structures deposit,
Technology is direct printing technology, and it does not need to use the technology of vacuum chamber, mask or a large amount of back deposit.International patent application no PCT/US01/14841 known to the public, publication number is WO 02/04698 and is hereby incorporated by, it has disclosed and has a kind ofly used aerosol to spray passive structures is deposited to method on a plurality of targets, but the error that does not provide deposition structure is reduced to the measure of making the electronic unit acceptable level.In fact, because the gathering of device inside particle, the use of the virtual impactor in this invention disclosed herein finally causes the inefficacy of system.As a result, the previous system that discloses was 15 to 100 minutes maximum running time before inefficacy, had the electronic errors near 10% to 30% deposition structure.
By contrast, the present invention can the deposit electricity leads, resistance, electric capacity or inductance value error be less than 5% passive structures, and arranged the running time of several hrs.
Summary of the invention
The present invention be a kind of on target deposit comprise the equipment of the passive structures of material, this equipment comprises: the sprayer that is used to form the suspended matter that comprises material and carrier gas; Be used to discharge the exhaust stream controller of unnecessary carrier gas; Be used for carrying the deposition head of suspended matter at the cylinder-shaped sleeve gas stream; The pressure sensing transducer; Connect the cross pipe (cross) of sprayer, deposition head, exhaust stream controller and transducer, wherein the error of passive structures ideal characterisitics is better than about 5%.This deposition head and sprayer preferably are connected cross pipe import department respect to one another.This exhaust stream controller preferably with suspended matter transmission by discharging unnecessary carrier gas on the perpendicular direction of the direction of this cross pipe.This exhaust stream controller preferably reduces the flow velocity of carrier gas.
This evaluation method selecting optimal equipment further comprises the processor that is used for receiving from described transducer data, and this processor judges whether take place to leak or stop up in this equipment.In this case, this evaluation method selecting optimal equipment further comprises feedback loop, if detect obstruction, is used for this equipment of self-purging; If perhaps detect leakage, stop the operation of this system automatically.This evaluation method selecting optimal equipment further comprises: laser, and its laser beam is through the suspended matter of via flow; And photodiode, be used to detect scattered light from this laser.This laser beam is preferably perpendicular to the flow direction of this suspended matter, and this photodiode preferred orientation is and this laser beam and this flow direction both quadratures.This photodiode preferably is connected to the controller that is used for controlling automatically this atomizer power.
The invention still further relates to a kind of on target deposit comprise the method for the passive structures of material, this method comprises the following steps: atomizing material; The material of carrying atomizing in carrier gas is to form suspended matter; By being positioned at opening, from suspended matter, remove unnecessary carrier gas perpendicular to the mobile direction of suspended matter; Monitor the pressure of described suspended matter; Center on this suspended matter with sheath gas; With deposition materials on target; Wherein the error of passive structures ideal characterisitics is better than about 5%.This method preferably further comprises the step of judge to exist leaking or stopping up based on force value, and if stop up and take place, if this system of automated cleaning or leak shut-down operation automatically takes place.This method preferably further comprises in suspended matter illuminating laser beam, and measures step from the scattered light of laser beam.This measuring process is preferably carried out with the detector of flow direction both quadratures of laser beam and suspended matter by being positioned.This method preferably further comprises the amount according to the scattered light that detects in measuring process, change the step that is used for atomization steps power.
This method preferably further comprises the step of handling material, and treatment step is preferably selected from by moistening suspended matter, dry suspended matter, heating suspended matter, heating deposition materials, with bombardment with laser beams deposition materials and their group that constitutes.Use the material of bombardment with laser beams deposit to guarantee that preferably the live width of deposition materials is little of about 1 micron.Use the material of bombardment with laser beams deposit the mean temperature of target not to be increased on the damage threshold.
An object of the present invention is awing to anticipate and/or after being deposited on the target again reprocessing handle material, produce physics and/or electrology characteristic with near value massive material.
Another object of the present invention is for providing a kind of deposition apparatus that can prolong running time.
An advantage of the present invention is, the passive structures of deposit have less than the electricity of 5% error lead, resistance, electric capacity or inductance value.
Other purpose of the present invention, advantage and novel feature, and further range of application will be partly in subsequently detailed description, and illustrate in conjunction with the accompanying drawings, partly will hereinafter understand, perhaps can understand by implementing the present invention in those skilled in the art's checking.Above-mentioned purpose of the present invention and advantage can realize or reach by the means that particularly point out in the subsidiary claim and combination.
Description of drawings
Merge and constitute the accompanying drawing of the part of specification, exemplified several embodiments of the present invention, and be used from the explanation principle of the invention with specification one.Accompanying drawing only is used to exemplify the purpose of the preferred embodiment of the present invention, is not construed as limiting the invention.In the accompanying drawings:
But Fig. 1 a be of the present inventionly can prolong running time, and passive structures preferred of deposit with 5% following error
The embodiment schematic diagram of equipment.
Fig. 1 b illustrates of the present invention preferred
The general embodiment of equipment is configured to promote spraying by compressed air.
Fig. 2 is the relation curve that illustrates between sheath gas pressure and total gas flow rates.
Fig. 3 a is the schematic cross-section with passive structures of terminal.The height of this structure is t
1
Fig. 3 b is the schematic diagram of Fig. 3 a, has the passive structures of a balance of adding.The height of this structure is t
2, t wherein
2＞t
1
Fig. 4 is the length that illustrates according to resistor material between weld pad, and the resistor of the rightmost side has the schematic diagram than the bigger resistance value of intermediate structure.
Fig. 5 a is the schematic diagram of the ladder resistor before the additional passive structures of writing direct.
Fig. 5 b is the schematic diagram of ladder resistor, illustrates in processing base plate and after increasing other assembly how to increase structure, thereby adjusts circuit after its major part is finished.
Fig. 6 is the schematic diagram that writes on the passive structures of object edge.
Fig. 7 a is the schematic diagram in final resistor linear passive path.
Fig. 7 b is the schematic diagram of the crooked passive path of final resistor.
Fig. 8 is the schematic diagram of the resistor in the through hole that embeds between two circuit layers.
Fig. 9 has described the method that is used at the sidewall and the bottom deposited capping layer of through hole.
Figure 10 a-c uses in mixing additional/minimizing technology
Technology is to use the schematic diagram of the accurate metal structure of etch stop layer manufacturing.
Embodiment
Foreword and general introduction
Should
Technology is a kind of additional direct printing technology, and it is operated in atmospheric environment, and has eliminated the demand to photoetching or vacuum deposition technique.This method can be with predetermined pattern deposit passive electric components, and flow of suspension deposition pattern on plane or nonplanar target of using air force to focus on, does not need to use mask or revises environment.Should
Thick film of having bought on method and the visual field and polymer thick film glue component are compatible mutually, and also can use with the composition that Liquid precursor constitutes with Liquid precursor based component, particle-based composition with by particle.This method also can be on same destination layer the multiple composition of deposit.This ability guarantees that on one deck directly the electric resistance structure of deposit has large-scale resistance, from 50 Ω/square with down to the scope that surpasses 500K Ω/square.
Should
Method can be mixed heterogeneity, such as a low value and a high value component, and in transmission, in one approach, the wherein preferred two kinds of components of a plurality of atomizer aerosolizations of using.Mentioned component is preferably by single deposition head deposit, and mixes and can take place in the suspended matter transmission course, perhaps when aerosol droplets makes up on target.This method allows to adjust automatically composition, allows resistance or other electricity, calorifics, optics or the chemical characteristic of deposit to be worth continuous change from the low value to the height.This hybrid technique also can be used for glue, ink, different fluid (include but not limited to, the particle suspension of precursor solution, electronics, optics, biological and. biocompatible material, adhesive) and their combination.
Employed in the whole text as this specification and claims, " passive structures " implication be have expection electrically, the structure of magnetic or other characteristic, include but not limited to conductor, resistor, capacitor, inductor, insulator, dielectric, inhibitor, filter, rheostat, ferromagnet, adhesive or the like.
This M
3D
TMOptimal process is with smoke-like form deposition materials.The aerosolization of most of particle suspension preferably uses the device that is promoted by compressed air to produce, and such as sprayer, yet ultrasonic aerosolization can be used for the particle suspension be made up of small-particle or low density particle.In this case, solid particles can be suspended in water or organic solvent and keep in the additive of suspension.These two kinds of spray methods allow to produce has the drop or the drop/particle of typical sizes 1 to 5 micrometer range, but is not confined to this scope.
The component of ultrasonic aerosolization has usually from 1 to 10cP range of viscosities.Precursor and precursor/particle component has 10 to 100cP viscosity usually, and is preferably by pneumatic aerosolization.Component with 100 to 1000cP viscosity is also preferably by pneumatic aerosolization.Use suitable diluent, viscosity can be modified to the viscosity that is suitable for pneumatic aerosolization greater than the component of 1000cP.
The preferred equipment of the present invention is shown in Fig. 1 a, the running time that it can deposit has the passive structures of 5% following error and have prolongation.Fig. 1 b shows
Equipment, configuration are used for promoting spraying by compressed air, and the most of general embodiment of this equipment has been described in detail in detail.Inert carrier gas or carrying object are preferred for transmitting the smoke-like sample to deposition module.In the situation of ultrasonic atomizatio, the carrier gas of loading suspended matter preferably enters deposition head immediately after aerosolization process.This carrier gas can comprise the mixing of compressed air, inert gas (it may comprise solvent vapour) or two kinds.The aerosolization process that is promoted by compressed air needs carrier gas flow rates, and preferably the maximum that surpasses by deposition head 22 can allow gas stream quick-action speed.In order to ensure utilize big carrier gas flow rates (such as, near 0.2 to 2 liter/min), preferably use virtual impactor reducing the flow velocity speed of carrier gas, and do not have the obvious minimizing of particle or drop.The quantity of the ladder that uses in the virtual impactor can change, and relevant with the amount of the carrier gas that must remove.Air-flow is introduced
In the deposition head, this place produces the annular flow that the flow of suspension by the inside that is centered on by sleeve pipe gas constitutes.The co-flow configuration can focus on flow of suspension extremely near direct 1/10th sizes of nozzle.
When using annular flow to make passive structures, flow of suspension preferably enters and arrives nozzle by the hole that is arranged on the deposition head 22.The quality of aerosol carrier gas stream controller 10 preferred control throughputs.In the inboard of deposition head, this flow of suspension is preliminary aligning the by the hole of process micron-scale preferably.Afterwards, the particle flux of appearance combines with sheath gas or fluid, forms by inside and loads the annular distribution that the carrier gas of suspended matter and outer sleeve gas or fluid constitute.The most common compressed air or the inert gas of comprising of this sheath gas, wherein a kind of or both can comprise the solvent vapor content of correction.The sheath gas inlet of this sheath gas below the suspended matter inlet enters, and forms the annular flow with flow of suspension.Gas stream controller 12 preferred control sheath gas.The air communication of combination is crossed 28 the hole of aiming at the mark and is left cavity.This annular flow focuses on flow of suspension to target 28, and allows to have little of 10 microns or the more deposit of the feature of low dimensional.The purpose of sheath gas is to form the boundary layer, and this boundary layer not only focuses on flow of suspension but also prevent that particle deposition is to hole wall.This protective action has reduced the obstruction in hole.
The diameter of the air-flow that occurs (and the live width of deposit) is thus controlled by the ratio and the interval between hole and the target 28 of size, sheath gas flow velocity and the flow rate of carrier gas in hole.In a kind of typical configuration, target 28 is fixed on the platen, and platen is moving on two vertical direction by the linear stepper of X-Y under the computer control, make can the deposit complexity geometric figure.A kind of configuration of replacement allows, and deposition head 22 moves on two vertical direction, keeps target 28 in the fixed position simultaneously.Yet another kind of configuration allows mobile in one direction deposition head 22, and target 28 moves on the direction vertical with deposition head 22 simultaneously.This technology also can the deposit three-dimensional structure.
Aerosolization and effective bump
In the preferred operations of the system of the present invention that in Fig. 1 a, describes in detail, the material fumesization that the sprayer 32 that collison-type pneumatic promotes makes in the sample bottle.The gas stream that loads suspended matter is transported to the cross pipe 30 of cross-over connection sprayer 32, deposition head 22, exhaust stream controller 34 and pressure sensor transducer 36.Cross pipe 30 preferably so is configured to the flow of suspension inlet relative with the flow of suspension outlet.Outlet is connected to
Deposition head.Unnecessary carrier gas preferably from system, be 90 with suspended matter I/O transmission line and discharge.Flow of material controller 34 is preferred for controlling the gas flow of discharging from system.By helping the mass flow of control by the material of deposition head, use fluid control control discharge currents, improve the accuracy of depositing technics.
In the embodiment that replaces, sprayer be set directly at virtual impactor near.Because finally less time of cost, the also evaporation of experience reduction the transmission from sprayer to target of suspended matter, near this virtual impactor of the layout sprayer output that compressed air promotes causes the deposit of drop greatly.The deposit of big drop can produce very important effect to the characteristic of deposition structure.In general, when comparing with little deposition structure to the medium size drop, the deposition structure that is formed by big drop demonstrates the still less spraying of the super scope of particle and the definition at raising edge.Can at random shake sprayer, to prevent material clumps.
Typically, the flow rate of carrier gas that compressed air promotes spraying and needs must reduce after producing suspended matter, so that guiding suspended matter air-flow enters in the deposition head.Preferred use the reduction that virtual impactor realizes needed flow rate of carrier gas-from 2L/min nearly to little to 10ml/min.Yet the use of virtual impactor may cause the easier obstruction of system, and the running time of reducing equipment is little of a few minutes, undesirably reduces the permissible error of deposition structure simultaneously.Resistor that can deposit carbon-based before inefficacy such as, the equipment among Fig. 1 b is little of 15 minutes, and the error of resistance value reaches to 30%.By contrast, the equipment among Fig. 1 a uses cross pipe 30 replacement standards
Virtual impactor, it gets rid of unnecessary carrier gas from system, and while and system be the loss and the accumulate particle of minimum particle together.Cross pipe 30 has bigger nozzle and the collector aperture more very important than the standard impactor of those uses as virtual impactor.More the use of giant and collector aperture can increase the amount of the material that flows through the less flow axis of virtual impactor, minimizes the gathering of device inside material simultaneously.
Leak/clog sensor
The present invention preferably uses the leak/clog sensor that comprises pressure converter, with the development of monitoring at sprayer gas access and sheath gas porch pressure.In normal operation, the pressure of expansion is relevant with the total gas flow rate by system in the system, and can use second order polynomial equation to calculate.Pressure shown in Figure 2 and the curve that flows through the total amount of system.If system pressure is higher than the pressure of being determined by curve among Fig. 2, then, material may form non-ideal flow because piling up.If there is system leak in hypotony, then can suppresses or prevent deposition of materials fully.The second order polynomial equation formula of the curve of expression normal running is following form:
P＝M
0+M
1Q+M
2Q
2
Wherein P is that sheath gas pressure and Q are overall flow rate.Provide overall flow rate by following equation by system:
Q
ultrasonic＝F
sheath+F
ultrasonic
Q
pneumatic＝F
sheath+F
pneumatic-F
exhaust
Wherein F is the device flow velocity.Each deposition tip diameter quotient M
0, M
1And M
2Be constant, but can change according to atmospheric pressure.
This leakage storage plug transducer provides valuable system diagnostics, and it can allow continuous manually or automatically monitoring and control system.When being operated in selected pattern, but supervisory control system stop up, and when the pressure increase that monitors above predetermined value, auto cleaning system.
Smoke Detection
For
System extension manually or operation automatically, the quantitative measurment of the suspended matter amount that is produced by sparger element is crucial.Keep constant smoke density and allow accurate deposit because can monitor and control transmission to the mass flow of the aerosolization material of target.
Optimum system choosing of the present invention utilizes Smoke Sensor, and it preferably includes the visible wavelength lasers device, and its laser beam is by the suspended matter efferent duct of sparger element.This light beam preferably is oriented orthogonal to tubular axis, and silicon photoelectric diode preferably is arranged in perpendicular near the pipe on the axle of pipe and two axles of laser.Because laser interacts wide scattered through angles with the smog stream that passes through pipe.The energy that is detected by photodiode is proportional to the aerosol density that smog flows.Along with the smog flow velocity increases, photodiode output increases until the state of reaching capacity, and this moment, the output of photodiode became constant.For the preferred saturated smog grade situation of constant smog output, make constant photodiode output show optimal operation conditions.
In feedback control loop, the output of sense photodiode, and can be used for determining the input power of ultrasonic nebulizer transducer.
Handle
Can be awing-during being transferred to deposition head 22, (formerly handle)-or in case be deposited to the material component that (in reprocessing) on the target 28 handles this aerosolization.Anticipate and to include but not limited to, moistening or dry aerosol carrier gas or sheath gas.Can finish humidification technology by introducing aerosolization drop and/or steam in carrier gas stream.Preferred use heating component evaporates one or more solvents and additive is finished evaporation technology.
Can include but not limited to a kind of or its combination below using in the technology in reprocessing: (1) adds the structural detail of thermal deposition with the method for heat; (2) pressure atmosphere that makes the structural detail of deposit stand to reduce; Or (3) use this structural detail of electromagnetic irradiation radiation.Usually needing from about 25 to 1000 ℃ temperature range of passive structures in reprocessing.Typically need solvent evaporation or cross-coupled deposit in about 25 to 250 ℃ of Temperature Treatment.The deposit of precursor or nano based particle typically needs about 75 to 600 ℃ treatment temperature, and simultaneously commercially available sintering glue needs conventional more heating-up temperature, about 450 to 1000 ℃.Commercially available polymer thick film glue typically treatment temperature is about 25 to 250 ℃.Can selectively in oxidation environment or reducing environment, carry out in reprocessing.In order to help to remove solvent and other volatile additive, the pressure environment that the deposit experience is reduced has the processing that is beneficial to the passive structures on the temperature-sensitive target.
Two kinds of method for optimizing that reach desired treatment temp are: by (heat treatment) heating deposit and target on heated plate or in the heating furnace, perhaps by using this structural detail of laser irradiation radiation.To the thick film glue on the deposit LASER HEATING permission densification traditional thermal target.Laser photochemistry is handled and has been used for decomposing liquid precursor with the resistor that forms paramount scope, the dielectric film that is low to moderate middle scope and the metal of high conductivity.Can selectively carry out laser treatment and depositing technics simultaneously.Deposit simultaneously and handle can be used to have thicker or set up the deposition structure of three-dimensional structure than several microns.More details about laser treatment can be at known U.S. Patent Application Serial Number No.10/952, obtain in 108, its denomination of invention is " Laser Processing ForHeat-Sensitive Mesoscale Deposition ", the applying date is on September 27th, 2004, and its specification and claims are hereby incorporated by.
Heat treatment structure has the live width that is partly determined by deposition head and deposition parameters, and minimum feature is near 5 microns.Maximum unidirectional live width is near 200 microns.Can use rastered deposition technique to obtain than 200 microns bigger live widths.The lines of laser-processing can have the live width of from 1 to 100 micrometer range (for the structure of using unidirectional deposit) approximately.Can use the grating technology to obtain live width greater than 100 microns.In general, use laser treatment densification or conversion are deposited on the film on the temperature-sensitive target, are 400 ℃ or those lower films such as having the low temperature threshold value, perhaps when wishing live width less than about 5 microns.The deposit of flow of suspension and processing can take place simultaneously.
The type of structure: material component
The invention provides a kind of method that is used for accurately making passive structures, wherein material component includes but not limited to, liquid chemical precursor, ink, glue or its combination in any.Especially, but the present invention's deposit electronic materials includes but not limited to conductor, resistor, dielectric and ferromagnetic material.Metal system includes but not limited to silver, copper, gold, platinum and palladium, and it can be commercially available glue form.The resistor component includes but not limited to, the system that is made of silver/glass, ruthenate, polymer thick film composition and carbon back composition.The composition that is used for the deposit capacitance structure includes but not limited to, barium titanate, barium strontium titanate, aluminium oxide and tantalum oxide.Used the manganese/zinc perferrite composition deposit induction structure of sneaking into the low melting point temperature glass particle.The present invention also can sneak into two kinds of ultra-violet curing inks and have the final component of target property with making, such as specific refractive index.
Precursor is by solute or is dissolved in the chemical constituent that the solute in the suitable solvent constitutes.This system can comprise the additive of the fluid, chemistry, physics or the optical characteristics that change solution.Ink can be made up of particle, includes but not limited to metal nanoparticle or has the metal nanoparticle of glass field trash, is suspended in the electronic material in the fluid nutrient medium.But deposit glue includes but not limited to, the commercially available glue composition that is used for conductor, resistance, dielectric and inductive-system.The present invention also can the commercially available viscous adhesive of deposit.
Resistor
Silver/glass resistor composition can be made of with suspension or the silver and the glass particle of glass particle or the silver particles that is used for the precursor liquids of glass the fluid molecule precursor that is used for silver.The ruthenate system can comprise mixing of the ruthenium oxide particles of conduction and insulating glass particle, the ruthenium oxide particles in glass precursor or ru oxide precursor and glass precursor or dielectric precursor.Precursor component and some precursors/particle component can have about viscosity of 10 to 100cP, and can be by ultrasonic aerosolization.Resistor pastes can be made of any one or two kinds of or carbon back composition in ruthenate, the polymer thick film.Typically the commercially available ruthenate glue that is made of ru oxide and glass particle has 1000cP or bigger viscosity, can use the suitable solvent as terpineol to water down to 1000cP or lower viscosity.Polymer thick film glue also can water down in suitable solvent to similar viscosity, so that use compressed air to infer that aerosolization and air-flow guiding become possibility.Similarly, carbon-based pastes can use the solvent as DEGMBE to water down to about 1000cP or lower viscosity.Therefore, use
Technology can change and deposit the commercial glue component that much has greater than 1000cP viscosity.
Resistor: the temperature coefficient of the scope of resistance, repeatability and resistance
Use
The electric resistance structure of technology deposit can comprise the resistance range of about 6 orders of magnitude, from 1 ohm to 1 megohm.This scope of resistance value can obtain by the suitable material that deposit has a suitable geometric cross section area.For one group of deposit, the ratio of the tolerance of resistance value or variance-be defined as highest resistance with difference with the average electrical resistance of lowest resistance value of passive structures-can be low to moderate percent 2.For silver/glass and ruthenate structure, the temperature coefficient of resistance value (TCR) can be in approximately variation in ± 50 to ± 100ppm.
Geometry
By the geometry of control deposit, the inventive method can be made the structure of specific electron, optics, physics or chemical score.Such as, as shown in Fig. 3 a and 3b, can change the characteristic of structure by the area of section of control structure.Can change resistance value by increasing material to existing existing route, increase the area of section of total path thus, thereby have existing route now and reduce resistance value when material adds to.This method is similar to normally used laser polishing process, yet material is increase but not removes.The passive path 38 of additional balance is deposited on the existing passive path 40.As another example, can obtain specific value by the length of control deposition structure; As shown in Figure 4, owing to have the more resistor material of length between contact mat, rightmost side resistor has the resistance value bigger than intermediate structure.Method of the present invention also can be used for increasing material on one group of path as shown in Fig. 5 a and 5b, or increases material between one or more groups connection gasket 42 that is connected to the electronic circuit that is pre-existing.Notch cuttype passive path 44a-b is added to existing passive path 40.This method allows circuit is transferred to specific response or characteristic value.As shown in Figure 6, by making passive connection or apply resistor material 46 in through hole around at the circuit layer edge, this method also can be made passive structures.
Use
Passive structures the present invention of technology deposit typically has linear geometry, such as the linear passive path 48 shown in Fig. 7 a.Other geometry includes but not limited to crooked shape 50 (as shown in Fig. 7 b), spirality and helicoid pattern.The live width of the resistance material of deposit, typically from about 10 to 200 microns variations, but also can be greater or lesser.Can be by obtain live width with the raster fashion deposition materials greater than 200 microns.The thickness of deposited film can be from the hundreds of nanometer to several microns variations.
Filling vias
Should
Technology can be used for filling vias, and it provides electric interconnection between the adjacent layer of electronic circuit.The present invention allowed during the time cycle that prolongs, and accurate, uniform deposit aerosolization material is such as in through hole.
The resistive that Fig. 8 shows between the circuit different layers connects.Conductive layer among the PCB (printed circuit board) typically connects by metal throuth hole, yet,
Technology also allows deposit electric resistance structure in through hole.This resistive via configuration is preferred, because by layer resistor moved in the through hole, provide additional space on the surface of board layer.
Fig. 9 has described a kind of method that is used at through-hole wall and bottom deposited capping layer.In Fig. 9 a, use technology of the present invention, with ink 62 complete filling through holes 60.Shown in Fig. 9 b, along with ink 62 becomes dry, solid 64 will stay the middle part of via hollow attached to through-hole wall and bottom.Use high conductivity material to cover through-hole wall and obtain very useful structure, because the most of electric current in the through hole flows and do not pass through the middle part along through-hole wall.
Dielectric
About making dielectric medium structure, ink can be made of the precursor that is used for insulating barrier, and such as polyimides, and glue can be the composition of the glass field trash that comprises insulating particles and low melting point temperature.Accurate deposit provided by the invention is crucial for making high tolerance capacitors, because the thickness of capacitive character film and uniformity have determined the performance of capacitor.Low-K dielectric material, such as glass and polymer, as the deposited for dielectric of capacitor application, and as insulating barrier or passivation layer deposit with the insulating electron assembly.Middle K and high-k dielectrics also can be used for the capacitor application deposit such as barium titanate.
Resist
The embodiment of the invention
Technology can be used for mixing additional/minimizing technology and make accurate metal structure to use resist.Shown in Figure 10 a, resist 70 preferred process deposition head atomizings also are deposited on the metal level 72.The technology that use to reduce afterwards, etching for example is to remove the metal of exposure, Figure 10 b.In the end a step, resist is removed, the metal structure 74 on the remaining following substrate, Figure 10 c.Should additional/minimizing resist technology can be used for deposit reactive metal, for example copper.
Target
Be suitable for using
The write direct target of passive structures of technology includes but not limited to polyimides, FR4, aluminium oxide, glass, zirconia and silicon.The resistor composition of processing on polyimides, FR4 and other target has low temperature and damages thresholding, that is, about 400 ℃ or lower damage threshold usually need LASER HEATING to obtain suitable densification.Laser photochemistry technology can be used on polyimides, writing direct paramount scope resistor material, for example strontium ruthenate.
Use
Use
The application that technology is made the passive structures permission includes but not limited to that writing direct is used for the resistor of electronic circuit, heating element, thermistor and strain gauge.This structure can be printed on more traditional high-temperature targets, for example aluminium oxide and zirconia; But also can be printed on the temperature-sensitive target, for example polyimides and FR4.Should
Technology also can be used for printing the embedded passive structure which floor through hole the circuit board that is pre-existing in, plane or non-planar surfaces are connected with electronic circuit to three-dimensional in.Other application includes but not limited to that hybrid passive element composition has the deposition structure of specific physical, optics, electronics or chemical characteristic with making; Repair the passive structures that formerly is present on the circuit board; With physics, optics, electronics or the chemical property in order to change system, deposition of passive structures on the target that is pre-existing in.The present invention guarantees that above-mentioned application has 5% or the physics or the characteristic electron of littler error.
Although describe the present invention in detail with reference to specific preferred and alternative embodiment, but in the spirit and scope that do not break away from claim subsequently, field of the present invention those of ordinary skill can be made various corrections and improvement, and other embodiment also can realize same effect.The various configuration purposes that preamble has disclosed be to instruct the reader preferably with the embodiment that replaces, and do not mean that the scope that limits the present invention or claim.Various distortion of the present invention and improvement are conspicuous to those skilled in the art, and it will cover all such improvement and equivalent variations.All patents and disclosed specification that preamble is quoted as proof are hereby incorporated by in full.
Claims (18)
1. one kind is used for the equipment that on target deposit comprises the passive structures of material,
This equipment comprises:
Be used to form the sprayer of the suspended matter that comprises material and carrier gas;
Be used to discharge the exhaust stream controller of unnecessary carrier gas;
Be used for sneaking at the cylinder-shaped sleeve air-flow deposition head of suspended matter, described deposition head only comprises single hole, and the described suspended matter of sneaking into is by this single hole;
The pressure sensing transducer; With
The cross pipe that connects described sprayer, described deposition head, described exhaust stream controller and described transducer;
Wherein the error of the characteristic of this passive structures is better than 5%; And
Wherein said passive structures comprises the material with the deposit of submillimeter level deposit width.
2. the equipment described in claim 1, wherein said exhaust stream controller reduces the flow velocity of carrier gas.
3. the equipment described in claim 1 wherein further comprises the processor that is used for receiving from described transducer data, and described processor judges whether have leakage or obstruction in described equipment.
4. the equipment described in claim 3 wherein further comprises feedback loop, if detect obstruction, and the described equipment of feedback loop self-purging; If perhaps detect leakage, stop the operation of described equipment automatically.
5. the equipment described in claim 1 wherein further comprises:
Laser, its laser beam is through the suspended matter of via flow; And
Photodiode is used to detect the scattered light from described suspended matter.
6. the equipment described in claim 5, wherein said laser beam is perpendicular to this suspended matter direction that flows, and described photodiode is orientated as and described laser beam and described suspended matter flow direction both quadratures.
7. equipment as claimed in claim 5 wherein further comprises the controller that is used for controlling automatically this sprayer power.
One kind on target deposit comprise the method for the passive structures of material, this method comprises the steps:
Atomizing material;
The material of carrying atomizing to the carrier gas to form suspended matter;
The use traffic controller removes unnecessary carrier gas from suspended matter;
Monitor the pressure of described suspended matter;
Center on this suspended matter and make suspended matter subsequently with sheath gas only by a hole;
Assemble described suspended matter; With
Deposit has the material of submillimeter level deposit live width on target;
Wherein the error of the characteristic of passive structures is better than 5%.
9. as the method in the claim 8, wherein further comprise based on force value and judge the step of leaking or stopping up existence.
10. as the method in the claim 9, wherein further comprise if stop up generation, the step of auto cleaning system.
11. as the method in the claim 9, wherein further comprise, automatically the step of shut-down operation if leak generation.
12. as the method in the claim 8, wherein further comprise illuminating laser beam in suspended matter, and measure step from the scattered light of described suspended matter.
13. as the method in the claim 12, wherein by being positioned to carry out the step of measuring described scattered light with the detector of flow direction both quadratures of laser beam and suspended matter.
14. as the method in the claim 12, wherein further comprise amount, change the step that is used for atomization steps power according to the scattered light that in measuring process, detects.
15., wherein further comprise the step of handling material as the method in the claim 8.
16. as the method in the claim 15, wherein treatment step select moistening suspended matter, dry suspended matter, heating suspended matter, heating deposition materials, with bombardment with laser beams deposition materials and their group that combination constituted.
17., wherein use the material of bombardment with laser beams deposit to guarantee that the live width of deposition materials is little of 1 micron as the method in the claim 16.
18. as the method in the claim 16, the material that wherein uses the bombardment with laser beams deposit is not increased to the mean temperature of target and is higher than damage threshold.
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US63584804P | 2004-12-13 | 2004-12-13 | |
| US60/635,848 | 2004-12-13 | ||
| US11/302,481 | 2005-12-12 | ||
| US11/302,481 US7674671B2 (en) | 2004-12-13 | 2005-12-12 | Aerodynamic jetting of aerosolized fluids for fabrication of passive structures |
| PCT/US2005/045407 WO2006065986A2 (en) | 2004-12-13 | 2005-12-13 | Aerodynamic jetting of aerosolized fluids for fabrication of passive structures |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101142677A CN101142677A (en) | 2008-03-12 |
| CN101142677B true CN101142677B (en) | 2010-06-09 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2005800426893A Active CN101142677B (en) | 2004-12-13 | 2005-12-13 | Device and method for depositing passive structure on target |
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| Country | Link |
|---|---|
| CN (1) | CN101142677B (en) |
| TW (1) | TWI289337B (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111402502A (en) * | 2020-03-20 | 2020-07-10 | 陕西科技大学 | Fluid charging method for charging according to flow |
| CN111429661A (en) * | 2020-03-20 | 2020-07-17 | 陕西科技大学 | Fluid charging method for charging according to time |
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2005
- 2005-12-13 TW TW94144069A patent/TWI289337B/en active
- 2005-12-13 CN CN2005800426893A patent/CN101142677B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| TW200633067A (en) | 2006-09-16 |
| TWI289337B (en) | 2007-11-01 |
| CN101142677A (en) | 2008-03-12 |
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