CN101141127B - Combination type power switch and power supply device with the switch - Google Patents
Combination type power switch and power supply device with the switch Download PDFInfo
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- CN101141127B CN101141127B CN2006101262933A CN200610126293A CN101141127B CN 101141127 B CN101141127 B CN 101141127B CN 2006101262933 A CN2006101262933 A CN 2006101262933A CN 200610126293 A CN200610126293 A CN 200610126293A CN 101141127 B CN101141127 B CN 101141127B
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- switch
- diode
- power mosfet
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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Abstract
The present invention relates to a combined power switch and the power source thereof and consists of a power MOSFEG(S); a first switch diode (D1) that is connected with the power MOSFET; a second switch diode (D2) that is connected in parallel with the serial circuit that consists of the power MOSFET and the first switch diode; the utility model is characterized in that: a capacitor (C1) is connected in parallel with the first switch diode (D1). The power source device consists of a combined power switch. The utility model can run reliably with high speed and can reduce wearing and improve efficiency by soft switch method. The utility model is suitable for middle and large power switch and power source device.
Description
Technical field
The present invention relates to a kind of power switch, specifically, the present invention relates to a kind of composite type power switch of energy high-speed cruising.The invention still further relates to a kind of supply unit, specifically, relate to a kind of switching power unit with this composite type power switch.
Background technology
In general, switching power unit includes switching circuit, is used for direct current is transformed into high-frequency alternating current, perhaps the direct current of a certain voltage is transformed into the direct current of another voltage.In switching circuit, its power switch device has a very important role.In high-frequency switch circuit, a large amount of uses are called as the power switchs of power MOSFET at present.Because there is parasitic diode in power MOSFET, and the reverse recovery time of this parasitic diode is longer, particularly powerful power MOSFET, the reverse recovery time of its parasitic diode is very long, is difficult to adapt to the high-speed cruising of switching circuit.For this reason, people have proposed a kind of composite type power switch that contains power MOSFET, so that the parasitic diode of contained power MOSFET forward conduction not, and do not have the problem of reverse recovery, to realize the high frequency operation." principle of Switching Power Supply and design " book that in June, 1998, the Electronic Industry Press published, wherein the 119th page this composite type power switch that contains power MOSFET has been described, promptly on power MOSFET the series connection Schottky diode, a last supper-fast diode in parallel again.This composite type power switch makes the parasitic diode of contained power MOSFET not have the problem of reverse recovery, has improved the high-speed cruising performance of power switch.But, this kind composite type power switch, particularly there are the following problems in the application of supply unit: the first, the HF switch loss of this kind composite type power switch is very big, has a strong impact on the high frequency performance of this kind composite type power switch and the efficient of supply unit; The second, the poor safety performance of this kind composite type power switch, the Schottky diode in it is easy to overvoltage and is reversed puncture, thereby causes the damage of its supply unit.
Summary of the invention
The objective of the invention is to provide a kind of new composite type power switch, make it have high frequency runnability preferably, particularly have higher reliability.Another object of the present invention is that a kind of supply unit with this composite type power switch will be provided, so that supply unit has higher reliability and efficient, in being suitable as, powerful power supply.
In order to achieve the above object, the present invention adopts following technical scheme:
A kind of composite type power switch comprises: power MOSFET; First switching diode of connecting with power MOSFET, the parasitic diode of its power MOSFET and first switching diode belong to differential concatenation; Carry out second switch diode in parallel with the series circuit of forming by the power MOSFET and first switching diode; It is characterized in that, on first switching diode, also be parallel with capacitor.
About connecting of power MOSFET and first switching diode, can adopt an end of first switching diode to link to each other with the drain electrode of described power MOSFET, also can adopt an end of first switching diode to link to each other with the source electrode of described power MOSFET.
Described first switching diode preferably uses Schottky diode; Described second switch diode preferably uses supper-fast diode.
Described power MOSFET can adopt a power MOSFET, also can adopt the composite type power MOSFET of being made up of a plurality of power MOSFETs parallel with one another, promptly also can be parallel with at least one other power MOSFET on described power MOSFET.
Described capacitor, its capacity can be positioned at C (U-50)/(U
F1+ U
F2+ 50)-C
D1To CU/ (U
F1+ U
F2)-C
D1Between, be preferably located in C (U-20)/(U
F1+ U
F2+ 20)-C
D1To CU/ (U
F1+ U
F2)-C
D1Between, wherein, U is the operating voltage of power MOSFET, U
F1Be the forward voltage drop of first switching diode, U
F2Be the forward voltage drop of second switch diode, C is total output capacitance of power MOSFET or is total output capacitance of a plurality of power MOSFETs parallel with one another, C
D1It is the parasitic capacitance of first switching diode.Here be noted that because in operating voltage on the power MOSFET and the operating voltage approximately equal on the composite type power switch, U also can think the operating voltage on the composite type power switch.
A kind of supply unit, it is characterized in that, include at least one composite type power switch, described composite type power switch is made of power MOSFET, first switching diode, second switch diode and capacitor, connect with power MOSFET after first switching diode and the capacitor parallel connection, the parasitic diode of its power MOSFET belongs to differential concatenation with first switching diode and is connected, and the second switch diode carries out in parallel with the circuit of being made up of power MOSFET, first switching diode and capacitor.
In described a kind of supply unit, on described power MOSFET, also be parallel with at least one other power MOSFET.Described first switching diode preferably uses Schottky diode; Described second switch diode preferably uses supper-fast diode.
In described a kind of supply unit, include half-bridge converter and two composite type power switchs, these two composite type power switchs are respectively as two brachium pontis of half-bridge converter.
In described a kind of supply unit, include full-bridge converter and four composite type power switchs, these four composite type power switchs are respectively as four brachium pontis of full-bridge converter.
In described a kind of supply unit, the composite type power switch that is comprised preferably adopts soft on-off mode work, to reduce the switching loss of electromagnetic interference and minimizing composite type power switch.
In described a kind of supply unit, described capacitor volume is positioned at C (U-50)/(U
F1+ U
F2+ 50)-C
D1To CU/ (U
F1+ U
F2)-C
D1Between, be preferably located in C (U-20)/(U
F1+ U
F2+ 20)-C
D1To CU/ (U
F1+ U
F2) C
D1Between, wherein, U is the operating voltage of power MOSFET, U
F1Be the forward voltage drop of first switching diode, U
F2Be the forward voltage drop of second switch diode, C is total output capacitance of power MOSFET or is total output capacitance of a plurality of power MOSFETs parallel with one another, C
D1It is the parasitic capacitance of first switching diode.Because in operating voltage on the power MOSFET and the operating voltage approximately equal on the composite type power switch, U also can think the operating voltage on the composite type power switch.
The present invention has following good effect:
At first, composite type power switch of the present invention and to have the reliability of supply unit of this switch higher.The composite type power switch of prior art, because power MOSFET is when disconnecting, the parasitic output capacitance of power MOSFET has stored a large amount of electric charges, when these electric charges raise at the current potential of the source electrode of power MOSFET, to to first switching diode of being connected the parasitic capacitance charging of Schottky diode, when its current potential be elevated to second switch diode in parallel when being supper-fast diode forward conducting, the electric charge that is filled on the parasitic capacitance of Schottky diode is maximum, its voltage is the highest, this magnitude of voltage is easy to surpass the oppositely the highest withstand voltage of Schottky diode, promptly cause Schottky diode to damage easily, in fact, Schottky diode reverse withstand voltage lower about 50 volts, generally is no more than 100 volts usually, if the parasitic capacitance of Schottky diode is less, and the parasitic output capacitance of power MOSFET is bigger, when the operating voltage of power MOSFET is higher, is easy to take place Schottky diode and is reversed and punctures and damage; And composite type power switch of the present invention, because on first switching diode and be connected with the capacitor of a constant volume, as long as its capacity is selected for use suitably, just can make high backward voltage on first switching diode far below its reverse breakdown voltage, simultaneously also can guarantee to make the parasitic diode of contained power MOSFET can not be in the forward operating state, neither there is reverse-recovery problems, thereby guaranteed the safe operation and the high-speed cruising of composite type power switch and whole supply unit, the existence of this capacitor has produced this wonderful effect.
Secondly, apparatus of the present invention can adopt soft on-off mode work, reduce the switching loss that the parasitic output capacitance of its power MOSFET is brought, and help improving the efficient of its switch or supply unit.In switching power unit, the switching loss for the parasitic output capacitance that reduces power MOSFET is brought when the HF switch often adopts a kind of soft on-off mode that is called as zero voltage switch; The composite type power switch of prior art, because contained power MOSFET, its parasitic output capacitance can't reduce switching loss by the so soft on-off mode of zero voltage switch, thereby no matter under hard switching or soft on-off mode, work, its switching loss is all very big, and the loss value that the parasitic output capacitance of its power MOSFET is brought when switch can be used FCU
2/ 2 estimate, wherein: F is a switching frequency, C is total output capacitance of power MOSFET, and U is the operating voltage of power MOSFET, for example is the power MOSFET of IRFP460 for model, its parasitic output capacitance reaches 870PF, in operating voltage is that 400 volts, switching frequency are when moving under the 400KHz, and loss value is about 27.8W, and big like this loss is difficult to make the people to accept, even reduce half, also be difficult to accept; And composite type power switch of the present invention, because on first switching diode and be connected with the capacitor of a constant volume, can make the parasitic output capacitance of contained power MOSFET reduce switching loss, help improving its efficient with the so soft on-off mode of zero voltage switch.
Description of drawings
Fig. 1 is the circuit structure of the composite type power switch of prior art;
Fig. 2 has showed the circuit structure of composite type power switch of the present invention;
Fig. 3 is another embodiment of composite type power switch of the present invention;
Fig. 4 is another embodiment of composite type power switch of the present invention.
Fig. 5 is the electrical block diagram of supply unit of the present invention.
Fig. 6 has showed another embodiment of supply unit of the present invention.
Fig. 7 has showed another embodiment of supply unit of the present invention.
Fig. 8 is the 4th embodiment of supply unit of the present invention.
Fig. 9 is the 5th embodiment of supply unit of the present invention.
Embodiment
Below in conjunction with drawings and Examples technical scheme of the present invention is further described.Following examples are to further specify of the present invention, and do not constitute limitation of the invention.
Fig. 1 shows the circuit structure of the composite type power switch of prior art.As seen from the figure, this composite type power switch comprises: power MOSFET S; The first switching diode D that connects with power MOSFET
1, the parasitic diode of its power MOSFET and the first switching diode D
1Belong to differential concatenation; Carry out second switch diode D in parallel with the series circuit of forming by the power MOSFET and first switching diode
2This composite type power switch makes the parasitic diode of contained power MOSFET not have the problem of reverse recovery, has improved the high-speed cruising performance of power switch.But, because contained power MOSFET has parasitic output capacitance, this parasitic output capacitance is when HF switch, no matter be to work under the hard switching mode or under soft on-off mode, working, very big switching loss is brought in the capital, simultaneously because discharging and recharging of this parasitism output capacitance makes the switching diode D that wins
1Bear very high reverse voltage, this reverse voltage value surpasses the oppositely the highest withstand voltage of first switching diode easily, causes its damage.
Fig. 2 has shown the circuit structure of composite type power switch of the present invention.Compare with prior art shown in Figure 1, composite type power switch of the present invention is at the first switching diode D of prior art
1On also be parallel with capacitor C
1The existence of this capacitor has just changed the influence of the parasitic output capacitance of contained power MOSFET to whole composite type power switch.As long as this capacitor volume is suitably selected, just can make the first switching diode D
1The high backward voltage that the time is born in work is far below its reverse breakdown voltage, simultaneously also can guarantee to make the parasitic diode of contained power MOSFET to be in the forward operating state all the time, promptly there is not reverse-recovery problems, thereby guarantees composite type power switch energy safe operation of the present invention and high-speed cruising; Also owing to the existence of this capacitor, can make the parasitic output capacitance of contained power MOSFET reduce switching loss, thereby improve its efficient in addition with the so soft on-off mode of zero voltage switch.
Fig. 3 is another embodiment of composite type power switch of the present invention.Compare with circuit structure shown in Figure 2, just by the first switching diode D
1With capacitor C
1The parallel circuits that is constituted is different with the tie point of connecting of power MOSFET S.Shown in Figure 2 by the first switching diode D
1With capacitor C
1The parallel circuits that is constituted is connected with power MOSFET in drain electrode place of power MOSFET; And shown in Figure 3 be to connect with power MOSFET at the source electrode place of power MOSFET.
Fig. 4 is another embodiment of composite type power switch of the present invention.It just also is parallel with another power MOSFET to shown in Figure 2 similar on described power MOSFET S.This parallel connection that belongs to a plurality of power MOSFETs is used.In the high-power applications occasion, can use the power MOSFET of tens same models to carry out the parallel connection use.Equally, arbitrary composite type power switch of Fig. 2, Fig. 3, structure shown in Figure 4 can carry out a plurality of in addition tens carry out parallel connection and use, can improve its power capacity like this.
Fig. 5 is the electrical block diagram of supply unit of the present invention.As seen from the figure, this supply unit comprises: control circuit, load circuit, half-bridge converter and two composite type power switch K
1, K
2Composite type power switch K
1By power MOSFET S
1, the first switching diode D
1, second switch diode D
2With capacitor C
1Constitute the first switching diode D
1With capacitor C
1Back in parallel and power MOSFET S
1Connect second switch diode D
2With by power MOSFET S
1, the first switching diode D
1With capacitor C
1The circuit of being formed carries out parallel connection; Equally, composite type power switch K
2By power MOSFETS
2, the first switching diode D
3, second switch diode D
4With capacitor C
2Constitute; These two composite type power switch K
1, K
2Respectively as two brachium pontis of half-bridge converter.One input voltage is V
INDirect current through becoming alternating current after the conversion of half-bridge converter, flow to load circuit then.The input voltage here is V
INDirect current normally after processing such as over commutation and filtering, obtain by public AC power, or after processing such as over commutation, Active PFC and filtering, obtain, or itself provide by a direct current power supply by public AC power; The load circuit here normally is made of circuit such as coupling circuit, AC load, or has circuit such as coupling circuit, rectification circuit, DC load to constitute; These are that those skilled in the art person is known.Obviously, two of this supply unit composite type power switch K
1, K
2As be operated under the soft on-off mode the zero voltage switch, will have very low switching loss, this helps improving the efficient of supply unit; In addition as long as two capacitor C
1, C
2Capacity select rationally its two composite type power switch K for use
1, K
2To have higher safety performance, and can adapt to the needs of high-speed cruising, and for example can under the high frequency of 400KHz, move.
Fig. 6 has showed another embodiment of supply unit of the present invention.This embodiment is similar to embodiment shown in Figure 5, and just the connected mode of its load circuit is different, and the connected mode of this load circuit is very common in the electron rectifier in mains lighting supply.
Fig. 7 has showed another embodiment of supply unit of the present invention.As seen from the figure, this supply unit comprises: control circuit, load circuit, half-bridge converter and four composite type power switch K
1, K
2, K
3, K
4Composite type power switch K
1By power MOSFET S
1, the first switching diode D
1, second switch diode D
2With capacitor C
1Constitute; Composite type power switch K
2By power MOSFET S
2, the first switching diode D
3, second switch diode D
4With capacitor C
2Constitute; Composite type power switch K
3By power MOSFET S
3, the first switching diode D
5, second switch diode D
6With capacitor C
3Constitute; Composite type power switch K
4By power MOSFET S
4, the first switching diode D
7, second switch diode D
8With capacitor C
4Constitute; Composite type power switch K
1, K
3Back in parallel constitutes the last brachium pontis of half-bridge converter; Composite type power switch K
2, K
4Back in parallel constitutes the following brachium pontis of half-bridge converter.This embodiment is very similar to embodiment shown in Figure 5 in fact, and just this embodiment constitutes a brachium pontis after by the parallel connection of two composite type power switchs, and this is in order to improve its power capacity.In order to provide high-power, even can adopt that tens composite type power switchs are in parallel to constitute brachium pontis.This is the technical scheme that can conveniently use in the high frequency solid-state power source, and the high frequency solid-state power source is widely used in fields such as high-frequency welding, high-frequency heating.
Fig. 8 has showed the 4th embodiment of supply unit of the present invention.As seen from the figure, this supply unit comprises: control circuit, load circuit, full-bridge converter and four composite type power switch K
1, K
2, K
3, K
4Composite type power switch K
1By power MOSFET S
1, the first switching diode D
1, second switch diode D
2With capacitor C
1Constitute; Composite type power switch K
2By power MOSFET S
2, the first switching diode D
3, second switch diode D
4With capacitor C
2Constitute; Composite type power switch K
3By power MOSFET S
3, the first switching diode D
5, second switch diode D
6With capacitor C
3Constitute; Composite type power switch K
4By power MOSFET S
4, the first switching diode D
7, second switch diode D
8With capacitor C
4Constitute; Four composite type power switch K
1, K
2, K
3, K
4Respectively as four brachium pontis of full-bridge converter.
Fig. 9 is the 5th embodiment of supply unit of the present invention.As seen from the figure, this supply unit comprises: control circuit, zero voltage switch controlled resonant converter.This converter is the boost type zero voltage switch controlled resonant converter that people are familiar with, and its switch is a composite type power switch K
1, this switch is by power MOSFET S
1, the first switching diode D
1, second switch diode D
2With capacitor C
1Constitute; Its inductance L
1Be energy storage inductor, Lr is a resonant inductance, capacitor C r and composite type power switch K
1The output capacitance sum be resonant capacitance.Input voltage is V
INDirect current through after this boost type zero voltage switch controlled resonant converter conversion, becoming output voltage is V
0Direct current, this is a kind of circuit structure available in switching power supply.Equally, use this kind composite type power switch, be easy to design and contain the buck type zero voltage switch controlled resonant converter that people are familiar with or the supply unit of buck-boost type zero voltage switch controlled resonant converter, this is that those skilled in the art person accomplishes easily.
Although showed and described and thought preferred embodiments of the invention at present, apparent, those skilled in the art can carry out various changes and improvements, and does not deviate from the scope of the present invention that is limited by appended claims.
Claims (5)
1. a composite type power switch comprises: power MOSFET; First switching diode (D1) of connecting with power MOSFET, the parasitic diode of its power MOSFET and first switching diode belong to differential concatenation; Carry out second switch diode (D in parallel with the series circuit of forming by the power MOSFET and first switching diode
2); It is characterized in that, at the first switching diode (D
1) on also be parallel with capacitor (C
1), described capacitor (C
1) capacity be positioned at C (U-50)/(U
F1+ U
F2+ 50)-C
D1To CU/ (U
F1+ U
F2)-C
D1Between, wherein, U is the operating voltage of power MOSFET, U
F1Be the forward voltage drop of first switching diode, U
F2Be the forward voltage drop of second switch diode, C is total output capacitance of power MOSFET, C
D1It is the parasitic capacitance of first switching diode.
2. a kind of composite type power switch as claimed in claim 1 is characterized in that, the described first switching diode (D
1) an end link to each other with the drain electrode of described power MOSFET.
3. a kind of composite type power switch as claimed in claim 1 is characterized in that, the described first switching diode (D
1) an end link to each other with the source electrode of described power MOSFET.
4. a kind of composite type power switch as claimed in claim 1 is characterized in that, also is parallel with at least one other power MOSFET on described power MOSFET.
5. a supply unit is characterized in that, includes at least one composite type power switch, and described composite type power switch is by power MOSFET, the first switching diode (D
1), second switch diode (D
2) and capacitor (C
1) constitute, connect with power MOSFET after first switching diode and the capacitor parallel connection, the parasitic diode of its power MOSFET belongs to differential concatenation with first switching diode and is connected, it is in parallel that second switch diode and the circuit of being made up of power MOSFET, first switching diode and capacitor carry out, described capacitor (C
1) capacity be positioned at C (U-50)/(U
F1+ U
F2+ 50)-C
D1To CU/ (U
F1+ U
F2)-C
D1Between, wherein, U is the operating voltage of power MOSFET, U
F1Be the forward voltage drop of first switching diode, U
F2Be the forward voltage drop of second switch diode, C is total output capacitance of power MOSFET, C
D1It is the parasitic capacitance of first switching diode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2006101262933A CN101141127B (en) | 2006-09-05 | 2006-09-05 | Combination type power switch and power supply device with the switch |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2006101262933A CN101141127B (en) | 2006-09-05 | 2006-09-05 | Combination type power switch and power supply device with the switch |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101141127A CN101141127A (en) | 2008-03-12 |
| CN101141127B true CN101141127B (en) | 2011-09-14 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2006101262933A Expired - Fee Related CN101141127B (en) | 2006-09-05 | 2006-09-05 | Combination type power switch and power supply device with the switch |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101141127B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9627962B2 (en) * | 2015-03-09 | 2017-04-18 | Texas Instruments Incorporated | Fast blocking switch |
| DE102015116995A1 (en) * | 2015-10-06 | 2017-04-06 | Infineon Technologies Austria Ag | Power factor correction circuit and method of operation |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5134321A (en) * | 1991-01-23 | 1992-07-28 | Harris Corporation | Power MOSFET AC power switch employing means for preventing conduction of body diode |
| CN1299179A (en) * | 2000-12-21 | 2001-06-13 | 深圳市华为电气技术有限公司 | Soft switching method for power switching transistor of DC converter and soft-switching DC converter |
| CN1347191A (en) * | 2000-10-11 | 2002-05-01 | 株式会社村田制作所 | Switch power supply unit |
| CN1564447A (en) * | 2004-04-13 | 2005-01-12 | 浙江大学 | Composite active clamped 3-phase A.C-D.C power factor correction transformer |
| CN200983560Y (en) * | 2006-09-05 | 2007-11-28 | 任文华 | A combination switch and power supply device |
-
2006
- 2006-09-05 CN CN2006101262933A patent/CN101141127B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5134321A (en) * | 1991-01-23 | 1992-07-28 | Harris Corporation | Power MOSFET AC power switch employing means for preventing conduction of body diode |
| CN1347191A (en) * | 2000-10-11 | 2002-05-01 | 株式会社村田制作所 | Switch power supply unit |
| CN1299179A (en) * | 2000-12-21 | 2001-06-13 | 深圳市华为电气技术有限公司 | Soft switching method for power switching transistor of DC converter and soft-switching DC converter |
| CN1564447A (en) * | 2004-04-13 | 2005-01-12 | 浙江大学 | Composite active clamped 3-phase A.C-D.C power factor correction transformer |
| CN200983560Y (en) * | 2006-09-05 | 2007-11-28 | 任文华 | A combination switch and power supply device |
Non-Patent Citations (1)
| Title |
|---|
| 张占松等.MOSFET的体内二极管.《开关电源的原理与设计》.电子工业出版社,2001,118-119. * |
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|---|---|
| CN101141127A (en) | 2008-03-12 |
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Address after: 310052 Hangzhou City, Binjiang District Province, No., Shing Road, Garden Court, building 2, room 3, unit 1402, room 3191 Patentee after: Ren Wenhua Address before: 310003, room 2, unit 129, 402 lane, lane, Hangzhou, Zhejiang Patentee before: Ren Wenhua |
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| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110914 Termination date: 20120905 |