CN101132120A - Double-capacitor micro-mechanical tunable vertical-cavity surface emitting laser and its manufacturing method - Google Patents
Double-capacitor micro-mechanical tunable vertical-cavity surface emitting laser and its manufacturing method Download PDFInfo
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- CN101132120A CN101132120A CNA2007101757714A CN200710175771A CN101132120A CN 101132120 A CN101132120 A CN 101132120A CN A2007101757714 A CNA2007101757714 A CN A2007101757714A CN 200710175771 A CN200710175771 A CN 200710175771A CN 101132120 A CN101132120 A CN 101132120A
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Abstract
This invention relates to a double-capacity micro-mechanically tunable vertical cavity surface laser emission device. It is composed, from top to the bottom, of: a tuning electrode (1), insulation medium film (70), upper distributed feedback Brag reflector (20), hollow sacrifice layer (40), an air gap layer therein (30), injection electrode (3), ohmic contact layer (2), middle distributed feedback Brag doped p+ type reflector (90), oxidation limiting layer (4), active zone layer (5), below distributed feedback Brag N+ type reflector (50), substrate (6) and ohmic contact electrode (7). The double electric capacity structure is composed by (70), (20) and (40). This invention effectively improves the tunable arrange of wavelength from the device.
Description
Technical field
Double-capacitor micro-mechanical tunable vertical-cavity surface emitting laser belongs to the semiconductor photoelectronic device field, relates to a kind of tunable wave length surface emitting laser structure design and preparation method.
Background technology
Multimode band optical fiber and dense wave division multipurpose (DWDM) system is more and more important in the application of optical communication field, this wave-length coverage that also requires traditional VCSEL light source to provide simultaneously is increasing, so people are more and more stronger to the demand of the tunable VCSEL of wide wavelength range.What extensively adopt at present, is that the method that micro mechanical system (MEMS) and traditional VCSEL combine is prepared micro-mechanical adjustable VCSEL.By the tuning VCSEL of electrostatic force have not only that tuning range is big, response speed is fast, the characteristics that are easy to realize mode jump free continuous tuning, and simple to operate, cost of manufacture is low, obtained paying attention to widely and studying.
The tuning manner of VCSEL employing that semiconductor is tunable is electrostatic force mechanical tuning.When voltage is added on top electrode, will be on movable produce electrical potential difference between distributed-feedback Prague speculum and the injecting electrode, thereby between top electrode and bottom electrode, form plate condenser, produce electrostatic force, thereby make the movable distributed-feedback Prague speculum of going up produce displacement, and then the width of change resonant cavity, wavelength is subjected to displacement.But, the material that tunable VCSEL adopts is the GaAs based material, the strong of GaAs material can have only 2.59eV, dielectric strength is 3.5 * 70e4V/cm, therefore, about 15V, otherwise be easy to the device breakdown emission that causes because of overtension for the high tuning voltage limit of the micromechanics of tunable VCSEL part.This restriction to tuning voltage will influence the displacement of movable distributed-feedback Prague speculum greatly, thereby wavelength tuning range is reduced, and tunable VCSEL tuning characteristic on a large scale in essence can not be brought into play fully.
Summary of the invention
The purpose of this invention is to provide a kind of continuous tuning VCSEL of wavelength that can effectively improve movable distributed-feedback Prague speculum displacement on a large scale.
The invention discloses a kind of double-capacitor micro-mechanical tunable vertical-cavity surface emitting laser, comprise
Aforesaid hollow sacrifice layer 40 materials are one of semiconducting compound GaAs, AlGaAs, GaInP, AlAs;
Aforesaid dielectric film 70 materials are SiO2 or Si3N4;
Aforesaidly go up distributed-feedback Prague speculum 20, distributed-feedback Prague speculum 50 is to be obtained by two kinds of different compound semiconductor materials 20～26 pairs of cycles of growth of refractive index down, middle distributed-feedback Prague speculum 90 is to be grown to 2～4 pairs of cycles by two kinds of different compound semiconductor materials of refractive index to obtain.
A kind of preparation method of double-capacitor micro-mechanical tunable vertical-cavity surface emitting laser structure may further comprise the steps:
Step 8, at substrate 6 lower surface sputter AuGeNiAu Ohm contact electrodes 7.
Step 9, selective etching sacrifice layer, the hollow space of hollow sacrifice layer 40 is made up of air-gap layer 30.
After tuning electrode 1 adds bias voltage, it is the two poles of the earth of capacitor that dielectric film 70 and injecting electrode 3 distribute, the medium of described capacitor is respectively distributed-feedback Prague speculum 20 and air-gap layer 30 two media, and described capacitor inside is the equal of to go up distributed-feedback Prague speculum 20 to contact with two capacitors that air-gap layer 30 forms.Handle movable distributed-feedback Prague speculum 20 by electrostatic force, resonant cavity thickness is reduced, resonance wavelength generation blue shift, behind the shutoff voltage, under the effect of elastic restoring force, movably go up distributed-feedback Prague speculum 20 and get back to its original location status, thereby it is adjustable to reach excitation wavelength.
The tunable laser that adopts structural design of the present invention and its preparation process to obtain has the tuning voltage height, satisfies the big requirement of movable film displacement, the characteristics that the excitation wavelength tuning range is wide.Avoid device to be easy to the little restriction of low, the movable film displacement range of tuning voltage to the tuning wavelength scope.
Description of drawings
Fig. 1: the device layer structural representation of the double-capacitor micro-mechanical tunable vertical-cavity surface emitting laser structure that proposes among the present invention;
Fig. 2: movable tuning voltage and the displacement diagram that goes up the distributed-feedback Prague speculum in the structure of the present invention.
Embodiment
The invention discloses a kind of double-capacitor micro-mechanical tunable vertical-cavity surface emitting laser, comprise
Concrete steps are as follows:
1, adopt Organometallic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE) system crystal orientation extension at distributed-feedback Prague speculum 50 under the n+ type of 26 couples of GaAs of epitaxial growth and AlGaAs cycle growth structure successively on the n-gallium arsenide substrate 6, active area 5, AlGaAs oxidation limiting layer 4, p type ohmic contact layer 2, the middle distributed-feedback Prague speculum 90 of the 3 couples of GaAs and AlGaAs cycle growth structure, the last distribution Bragg reflector 20 of 40,23 couples of GaAs of AlGaAs hollow sacrifice layer and AlGaAs cycle growth structure;
2, adopt ion to strengthen chemical meteorological deposit PECVD and prepare SiO2 dielectric film 70, thickness is 100nm, and is formed at distribution Bragg reflector 20 upper surfaces;
3, the method for utilizing photoetching and selective wet etching to combine with dielectric film 70 and last distributed-feedback Prague speculum 20 selective etchings, is prepared cantilever beam stereo profile figure;
4, carry out the secondary photoetching, corrosion ohmic contact layer 2 and middle distributed-feedback Prague speculum 90 form mesa structure, expose oxidation limiting layer 4 sidewalls;
5, utilize oxidation furnace equipment under 440 ℃, oxidation 30 minutes is carried out oxidation to oxidation limiting layer 4, forms injection current limiting aperture 20um;
6, selective etching sacrifice layer exposes p type ohmic contact layer 5;
7, the tuning electrode 1 of preparation on dielectric film 70 is in p type ohmic contact layer 2 surface preparation TiAu injecting electrodes 3;
8, prepare AuGeNiAu Ohm contact electrode 7 at substrate 6 lower surfaces;
9, selective etching sacrifice layer, the hollow space of hollow sacrifice layer 40 are air-gap layers 30, and thickness is 5/4ths of excitation wavelength;
The selective etching sacrifice layer obtains hollow sacrifice layer 40, and hollow space is made up of air-gap 30, thus make distribution Bragg reflector 20 unsettled with active area 5 on.Air-gap layer 30 is as the part of resonant cavity, and air and adjacent semiconductor material contact surface are very big to laser bright dipping influential effect, and therefore, sacrifice layer 40 is that the selective etching digit rate is than two kinds of very big materials, for example GaAs and AlGaAs at last.
Fig. 2 is the displacement curve that last distributed-feedback Prague speculum 20 changes with tuning voltage.Reference numeral D1 and D2 be corresponding tuning voltage 15V and 30V point respectively.When they express corresponding different tuning voltage, what of last distributed-feedback Prague speculum 20 displacements.
Situation shown in the D1 is: do not have under dielectric film 70 situations, the tuning voltage maximum is about 15V, and under electrostatic force between tuning electrode 1 and the injecting electrode 3, last distributed-feedback Prague speculum 20 displacements have only 50nm;
Situation shown in the D2 is: adopt under the situation of dielectric film 70 among the present invention, tuning voltage can be brought up to more than the 30V.Dielectric film 70, tuning electrode 1, last distributed-feedback Prague speculum 20, hollow sacrifice layer 30 and injecting electrode 3 are formed two capacitance structures, and under electrostatic force, last distributed-feedback Prague speculum 20 displacements have reached 250nm.
Claims (5)
1. double-capacitor micro-mechanical tunable vertical-cavity surface emitting laser is characterized in that, comprises successively from top to bottom:
Tuning electrode (1), dielectric film (70), last distributed-feedback Prague speculum (20), hollow sacrifice layer (40), the hollow space of hollow sacrifice layer (40) is air-gap layer (30), injecting electrode (3), ohmic contact layer (2), middle distributed-feedback Prague speculum (90), oxidation limiting layer (4), active region layer (5), following distributed-feedback Prague speculum (50), substrate (6) and Ohm contact electrode (7), described dielectric film (70) and last distributed-feedback Prague speculum (20), hollow sacrifice layer (40) constitutes two capacitance structures, described hollow sacrifice layer (40) thickness is 5-7 times of 1/4th laser excitation wavelengths, and described upward distributed-feedback Prague speculum (20) and middle distributed-feedback Prague speculum (90) are doping p
+Type, following distributed-feedback Prague speculum (50) is n
+Type.
2. double-capacitor micro-mechanical tunable vertical-cavity surface emitting laser according to claim 1 is characterized in that: described hollow sacrifice layer (40) material is one of semiconducting compound GaAs, AlGaAs, GaInP, AlAs.
3. double-capacitor micro-mechanical tunable vertical-cavity surface emitting laser according to claim 1 is characterized in that: described dielectric film (70) material is SiO
2Or Si
3N
4
4. double-capacitor micro-mechanical tunable vertical-cavity surface emitting laser according to claim 1, it is characterized in that: describedly go up distributed-feedback Prague speculum (20), distributed-feedback Prague speculum (50) is to be obtained by two kinds of different compound semiconductor materials 20～26 pairs of cycles of growth of refractive index down, middle distributed-feedback Prague speculum (90) is to be grown to 2～4 pairs of cycles by two kinds of different compound semiconductor materials of refractive index to obtain.
5. the preparation method of double-capacitor micro-mechanical tunable vertical-cavity surface emitting laser according to claim 1 may further comprise the steps
Step 1, adopt Organometallic chemical vapor deposition or molecular beam epitaxy system at distributed-feedback Prague speculum (50) under the epitaxial growth successively on the substrate (6), active area (5), oxidation limiting layer (4), middle distributed-feedback Prague speculum (90), p type ohmic contact layer (2);
Step 2, employing Organometallic chemical vapor deposition or molecular beam epitaxy system adopt the plasma-reinforced chemical vapor deposition method to prepare dielectric film (70) at last epitaxial growth sacrifice layer of p type ohmic contact layer (2) and last distributed-feedback Prague speculum (20);
Step 3, the method for utilizing photoetching and selective wet etching to combine with dielectric film (70) and last distributed-feedback Prague speculum (20) selective etching, are prepared cantilever beam stereo profile figure;
Step 4, carry out the secondary photoetching, corrosion ohmic contact layer (2) and middle distributed-feedback Prague speculum (90), the formation mesa structure exposes oxidation limiting layer (4) sidewall;
Step 5, utilize oxidation furnace equipment under 440 ℃, oxidation 30 minutes is carried out oxidation to oxidation limiting layer (4), forms injection current limiting aperture 20um;
Step 6, selective etching sacrifice layer expose p type ohmic contact layer (2);
Step 7, go up the tuning electrode of sputter (1) at dielectric film (70), in p type ohmic contact layer (2) surface sputtering TiAu injecting electrode (3);
Step 8, at substrate (6) lower surface sputter AuGeNiAu Ohm contact electrode (7);
Step 9, selective etching sacrifice layer, the hollow space of hollow sacrifice layer (40) are air-gap layer (30).
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007101757714A CN100479281C (en) | 2007-10-11 | 2007-10-11 | Double-capacitor micro-mechanical tunable vertical-cavity surface emitting laser and its manufacturing method |
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| CNB2007101757714A CN100479281C (en) | 2007-10-11 | 2007-10-11 | Double-capacitor micro-mechanical tunable vertical-cavity surface emitting laser and its manufacturing method |
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| CN100479281C CN100479281C (en) | 2009-04-15 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102135671A (en) * | 2010-01-22 | 2011-07-27 | 三星电子株式会社 | Optical modulator |
| CN111884046A (en) * | 2020-07-06 | 2020-11-03 | 武汉光谷量子技术有限公司 | Distributed Bragg reflector and manufacturing method and design method thereof |
| CN112421377A (en) * | 2020-11-18 | 2021-02-26 | 广东鸿芯科技有限公司 | Anti-light-mixing semiconductor laser and preparation method thereof |
| WO2022110909A1 (en) * | 2020-11-25 | 2022-06-02 | 上海禾赛科技有限公司 | Resonant cavity, laser unit, chip, laser device and formation method therefor, and laser radar |
-
2007
- 2007-10-11 CN CNB2007101757714A patent/CN100479281C/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102135671A (en) * | 2010-01-22 | 2011-07-27 | 三星电子株式会社 | Optical modulator |
| CN102135671B (en) * | 2010-01-22 | 2015-08-26 | 三星电子株式会社 | Optical modulator |
| CN111884046A (en) * | 2020-07-06 | 2020-11-03 | 武汉光谷量子技术有限公司 | Distributed Bragg reflector and manufacturing method and design method thereof |
| CN111884046B (en) * | 2020-07-06 | 2021-11-09 | 武汉光谷量子技术有限公司 | Distributed Bragg reflector and manufacturing method and design method thereof |
| CN112421377A (en) * | 2020-11-18 | 2021-02-26 | 广东鸿芯科技有限公司 | Anti-light-mixing semiconductor laser and preparation method thereof |
| CN112421377B (en) * | 2020-11-18 | 2021-09-28 | 广东鸿芯科技有限公司 | Anti-light-mixing semiconductor laser and preparation method thereof |
| WO2022110909A1 (en) * | 2020-11-25 | 2022-06-02 | 上海禾赛科技有限公司 | Resonant cavity, laser unit, chip, laser device and formation method therefor, and laser radar |
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|---|---|
| CN100479281C (en) | 2009-04-15 |
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