CN101126903A - Holographic eliminating aberration method and its projection lithography system - Google Patents
Holographic eliminating aberration method and its projection lithography system Download PDFInfo
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- CN101126903A CN101126903A CNA2007100997617A CN200710099761A CN101126903A CN 101126903 A CN101126903 A CN 101126903A CN A2007100997617 A CNA2007100997617 A CN A2007100997617A CN 200710099761 A CN200710099761 A CN 200710099761A CN 101126903 A CN101126903 A CN 101126903A
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Abstract
The utility model relates to a method for eliminating the holographical aberration, which is characterized in that the exposure of holographical lighting art under specified condition is used to record the illumination information of the photolithography, the modulation information of the projection objective and the mask phase on the holographical dry plate at the same time. The exposed holographical dry plate can be substituted for the mask and lighting system of the prior art, the conjugation reappearance method can be used to make the reappeared conjugate light wave enter the projection objective again and compensate the aberration of the projection objective in the photographic process. The light beam with the modulation information of the mask, the reticle information of the projection objective and the illumination information can make the photoresist exposed to complete the process of photolithography exposure. The projection and photolithography system utilizing the method must comprise a laser [1], an optical shutter [2], a lighting system [3], a polarization control device [4], a projection objective [5], an expanding device [6], a mask [7], a holographical dry plate [8], a spectroscope [9], a silicon wafer of resist [15], a silicon wafer worktable [16] and a plurality of reflectors [10, 11, 12, 13, 14].
Description
Technical field
The present invention relates to the projection lithography system of high-resolution Micropicture, particularly a kind of holographic eliminating aberration method and projection lithography system thereof.
Background technology
The projecting etching imaging technology is to utilize a branch of light that comprises the mask modulation intelligence after projection objective doubly contracts, and produces specific intensity distributions at the substrate surface that scribbles resist, and exposure produces the figure identical with the mask graph shape, that size is dwindled to resist.The high fidelity that realizes figure has all proposed high requirement to projection objective and even overall exposing system.The aberration that reduces projection objective is the most direct means that improve fidelity.Existing control strategy to the projection objective aberration has two kinds, the one, design and produce with assembling process in reduce aberration as far as possible, this has proposed high requirement to design and machining precision.The 2nd, utilize trace to adjust function control aberration.
At present traditional anaberration projecting etching imaging method and the corresponding system document that sees reference:
[1]Yasuo?Shimizu，Tadashi?Yamaguchi，Kousuke?Suzuki，et?al.Aberration?OptimizingSystem?Using?Zernike?Sensitivity?Method[J].Proc.SPIE.2003.Vol.5040：1581-1590.
[2]Nakgeuon?Seong，Young?S.Kang，Hanku?Cho，and?Joo-Tae?Moon.Optimal?lensassignment?through?measured?aberrations[J].Proc.SPIE.2001，4346：1-7.
The projection lithography exposure system that above document relates to, its structural representation as shown in Figure 1.According to spatial order from top to bottom, be respectively illuminator 1, mask 2, projection objective 3, resist silicon chip 4 and silicon chip worktable 5.This system realizes that the means of optical patterning are: the laser of modulating through illuminator is loaded into illumination information and mask information in the light wave fields through behind the mask, doubly shorten picture into through projection objective again, finally project on the silicon chip that scribbles resist, realize exposure.Projection objective is through the aberration optimal design, and the relative position of each optical module can be changeless in the projection objective, also can carry out trace adjustment.Projection objective with aberration fine adjustment function is equivalent to the zoom system of a complexity, but its design difficulty will be far longer than conventional zoom system.Usually, when adjusting a kind of geometrical aberration, can cause that other geometrical aberration changes simultaneously.Therefore, when carrying out the adjustment of aberration trace, must be able to guarantee: when adjusting a kind of geometrical aberration, other geometrical aberration should remain unchanged, or its variation limitation in allowed limits, perhaps by other element of adjusting in the object lens it compensated effectively.
This method that reduces aberration has all proposed high requirement to each lens design of projection objective and mechanical speed-control device.No matter be to adopt any in above two kinds of control strategies, all just be confined to projection objective self, all unavoidably increase the complexity and the cost of projection objective system.
Holographic technology is to utilize interference technique to send the amplitude of light and phase information fully is recorded on the photosensitive material simultaneously from object, the light interference pattern of gained is just becoming hologram after photochemical treatment, when playback light during, the wavefront of the object light wave of original record is reappeared according to this hologram of specific angular illumination.When illumination light is identical with reference light, reproduce the light wave of acquisition except that the amplitude size changes, all characteristics with original thing light wave, when the conjugation of illumination light and reference light is identical, reproduce the light wave and the original thing light wave conjugation each other that goes up mutually on the throne that obtain, be that wavefront is identical, the direction of propagation is opposite.
The at present traditional holographic element method of imaging system aberration document that sees reference that disappears that utilizes:
[1] Wang Yingli, Yao Baoli, Chen Yi etc., the conjugation reading method is eliminated the phase distortion in the photochromic material holographic recording, photon journal, 2004, Vol.33, No.12 (1529-1531).
The imaging optical system that above document relates to is comparatively simple, is simple convex lens, and the aberration of introducing also comprises the aberration that lens and inclined light shaft placement are introduced except that the aberration of lens self.Experimental result is for when utilizing conjugate wave irradiation holographic recording medium, compensated completely by the phase distortion of lens generation, and original light wave has obtained accurate reproduction, thereby confirmed to utilize the feasibility of the method anaberration that the holographic recording conjugation reads.Above method is just simply reproduced the thing light wave, not for it is carried out specific modulation, thereby can only be applied in limited several fields such as holographic measurement etc.
Summary of the invention
The technical matters that the present invention solves is: overcome in the existing projection lithography for guaranteeing that image quality requires the projection objective Design and Machining difficulty of bringing, the problem that cost is too high, adopt holographic recording, the method compensation projection objective aberration that conjugation is reproduced, reduce the projection objective designing requirement, provide a kind of simple in structure, be convenient to operation, the projection lithography system that imaging performance is stable.
The technical solution adopted in the present invention is as follows: at first utilize holographic lighting engineering to expose under given conditions, with illumination information in the photoetching, projection objective modulation intelligence and mask position phase modulation intelligence are recorded on the holographic dry plate simultaneously.Comprised in the modulation intelligence of projection objective the information that doubly contracts of light beam and the aberration information in the imaging process.Utilize mask and illuminator in the alternative traditional projection lithography of holographic dry plate after exposing, adopt the conjugation playback system, the conjugation light wave after order is reproduced enters projection objective once more, has compensated the aberration that projection objective is introduced in imaging process.Carry doubly the contract light beam of information and illumination information of mask modulation intelligence, projection objective and finally make resist exposure, thereby finished the photolithographic exposure process.
The present invention divides holographic dry plate exposure, holographic dry plate development typing and three steps of projection lithography exposure.
1, holographic dry plate exposure: at first utilize holographic lighting engineering that holographic dry plate is exposed.The light that sends from laser instrument is divided into two-way light by spectroscope after shutter gate, one road light is successively through shining on the holographic dry plate this Shu Guangwei object beam behind illuminator, polarization control system, projection objective and the mask.Shine on the holographic dry plate this Shu Guangwei reference beam behind another Lu Guangjing beam expander.Suitably select the expansion bundle multiplying power of beam expander, to guarantee that object beam has identical spot size with reference beam on holographic dry plate, the reference beam that expands after restrainting requires to be directional light.
2, holographic dry plate development typing: holographic dry plate develops to finalize the design and finishes on the dry plate frame in real time, and real-time dry plate frame can guarantee to finish when holographic dry plate does not move in situ the development type-approval process.
3, projection lithography exposure: remove other devices except that LASER Light Source, shutter gate, holographic dry plate, projection objective, the light that LASER Light Source is sent with the beam expander in the reference light light path expands bundle, with the direction irradiation holographic dry plate opposite with reference light, this light beam is a playback light, playback light and reference beam be conjugation each other, be that wavefront is identical, the direction of propagation is opposite.The light that holographic dry plate obtains after reproducing projects on the resist silicon chip through projection objective again, and the silicon chip of resist utilizes vacuum pump and the sealing tracheae adsorbed close that is attached thereto to be fixed on the automatically controlled Precision Wafer worktable.Suitably adjust the silicon chip worktable, make the resist silicon chip be in the optimum position, utilize the shutter gate control time shutter, finally on resist, obtain the Micropicture identical with mask graph.
Principle of work of the present invention is as follows:
The laser beam of sending from laser instrument is divided into two-beam through spectroscope, a branch of after the modulation of illuminator and Polarization Controller the outgoing light wave carried the modulation intelligence of illuminator and Polarization Controller.After oppositely injecting projection objective, the light wave of outgoing has carried the position phase modulation intelligence of projection objective again.Comprised in the modulation intelligence of projection objective the information that doubly contracts of light beam and the aberration information in the imaging process.Loaded the mask modulation intelligence once more through light wave behind the mask again.This a branch of light as the thing light-wave irradiation to holographic dry plate.Another bundle through parallel beam expand device expand the conduct of bundle back with reference to light-wave irradiation to holographic dry plate.Because oppositely the projection objective that uses is identical to the enlargement ratio of light beam with parallel beam expand device, the beam sizes of thing light wave and reference light wave is suitable, by beam interference exposure with the position of the modulation intelligence of the modulation intelligence of illuminator and Polarization Controller, projection objective and mask mutually modulation intelligence be recorded on the holographic dry plate simultaneously.
The typing because holographic dry plate develops on real-time dry plate frame, so the relative space position of holographic dry plate and projection objective does not change.
Utilize mask and illuminator in the alternative traditional projection lithography of holographic dry plate after exposing, adopt the conjugation playback system, the conjugation light wave after order is reproduced enters projection objective once more.Playback light and reference light are directional light, and beam sizes is identical, the conjugation each other that goes up mutually on the throne, and promptly wavefront is identical, and the direction of propagation is opposite.The light beam that holographic dry plate reproduces gained has comprised all information that holographic dry plate writes down, forward entrance advances projection objective, the projection objective position phase modulation intelligence that carries in this light beam is modulated mutually with the position that forward is accepted through projection objective and is cancelled each other, compensated the aberration that projection objective is introduced in imaging process, the outgoing light wave no longer is subjected to the influence of projection objective aberration from projection objective.Thereby the design of projection objective only need satisfy the convergent-divergent multiplying power and get final product, and aberration is no longer included strict restriction.Carry doubly the contract light beam of information, illumination information and polarization information of mask modulation intelligence, projection objective and finally make the resist silicon wafer exposure, thereby finished the photolithographic exposure process.
The present invention organically combines holographic lighting engineering and projection lithography technology, utilize special playback light (plane wave) to reproduce holographic dry plate, holographic dry plate reproduces the light positive of back acquisition to the process projection objective, compensating specific modulation intelligence (projection objective aberration) selectively, no longer is the simple reproduction of original thing light wave in the holograph.
The projection lithography system of using holographic eliminating aberration method of the present invention is mainly by laser instrument, shutter gate, beam expander, holographic dry plate, projection objective, the silicon chip that is coated with resist, silicon chip worktable, automatically controlled accurate adjusting mechanism are formed, and are divided into holographic dry plate exposure device and projection lithography exposure device two parts.Wherein the holographic dry plate exposure device comprises laser instrument, shutter gate, illuminator, polarized controller, projection objective, parallel beam expand device, mask, holographic dry plate, spectroscope and catoptron.The parallel beam expand device enlargement ratio of reference light and the playback light all enlargement ratio with projection objective is identical.Reference light and playback light are directional light, and conjugation each other, and promptly the wavefront position is mutually identical, and the direction of propagation is opposite.Holographic dry plate places on the real-time dry plate frame.Holographic dry plate keeps constant with the relative position of projection objective in exposure process and reconstruction of hologram projection imaging process, finishes the development and the typing of holographic dry plate on real-time dry plate frame.For guaranteeing the success of holographic recording, the two-way light optical path difference of holographic dry plate exposure device should be sent the coherent length of laser less than light source.
According to the light path order, the locus of each device of projection lithography exposure device of the present invention is laser instrument, shutter gate, catoptron, parallel beam expand device, holographic dry plate, projection objective, resist silicon chip and silicon chip worktable, catoptron in proper order.Holographic dry plate is positioned on the real-time dry plate frame.It is laser instrument, shutter gate in proper order that each device of composition holographic dry plate exposure device moves towards the locus by laser beam, and after spectroscope is divided into two bundles with light beam, beam of laser shines on the holographic dry plate through catoptron, illuminator, polarized controller, catoptron, projection objective, mask, and another Shu Jiguang shines on the holographic dry plate through catoptron, parallel beam expand device.
The contrast prior art, projection lithography system of the present invention also possesses following advantage except one-piece construction is simple:
(1) utilize the holographic dry plate record illumination information, polarization information, projection objective position phase modulation intelligence and mask position phase modulation intelligence to replace mask in traditional projection lithography, be equivalent to make light beam successively oppositely and forward pass through projection objective, compensated the aberration that the projection objective imaging brings during the course effectively, modulation to light beam can not exert an influence yet to mask simultaneously, can effectively improve image quality.
(2) light beam of final resist exposure no longer is subjected to the influence of projection objective aberration, projection objective only plays the effect of doubly contracting in whole photoetching process, compare with traditional projection lithography, the designing requirement of projection objective reduces greatly, can greatly reduce the design and the processing cost of projection objective.
(3) in the whole photoetching process, illuminator, polarization control system can separate fully with the modulation of projection objective to light beam, need not to consider the restriction of projection objective in the design to illuminator and polarization control system, for the adjustment of projection lithography exposing light beam parameter provides more flexibility.
The principle of the invention is simple, neither needs existing projection lithography system is done big change, can compensate the aberration of projection objective again effectively, reduces the photoetching cost, obtains high projection imaging quality.The present invention not only can be applicable to illuminator in the Ultra-Violet Laser photoetching technique, immersion liquid, photoresist, top layer film and underlying membrane are to the research of imaging performance influence in the research that polarized systems influences imaging performance, the liquid immersion lithography, also can utilize it to make the high-quality Micropicture, thereby be with a wide range of applications at microelectronics and optoelectronic areas.
Description of drawings
Fig. 1 is existing traditional projection lithography system synoptic diagram.1 is illuminator, and 2 is mask, and 3 is projection objective, and 4 is the resist silicon chip, and 5 is the silicon chip worktable.
Fig. 2 is the inventive method technological process and structural representation:
For the holographic dry plate exposure device, 1 is laser instrument, and 2 is shutter gate, and 3 is illuminator, and 4 is polarized controller, and 5 is projection objective, and 6 is parallel beam expand device, and 7 is mask, and 8 is holographic dry plate, and 9 is spectroscope, and 10,11,12,13 is catoptron.
For the projection lithography exposure device, 1 is laser instrument, and 2 is shutter gate, and 6 is parallel beam expand device, and 8 is holographic dry plate, and 5 is projection objective, and 15 is the resist silicon chip, and 16 is the silicon chip worktable, and 14 is catoptron.
Embodiment
The invention will be further described below in conjunction with the drawings and specific embodiments.
As shown in Figure 2, projection lithography system of the present invention comprises holographic dry plate exposure device and projection lithography exposure device two parts.The holographic dry plate exposure device comprises laser instrument 1, shutter gate 2, illuminator 3, polarized controller 4, projection objective 5, parallel beam expand device 6, mask 7, holographic dry plate 8, spectroscope 9 and catoptron 10,11,12,13.More than each device move towards the locus by laser beam and be in proper order: laser instrument 1, shutter gate 2, through spectroscope 9 light beam is divided into two bundles, beam of laser finally shines on the holographic dry plate 8 through catoptron 10, illuminator 3, polarized controller 4, catoptron 11, projection objective 5, mask 7; Another Shu Jiguang shines on the holographic dry plate 8 through catoptron 12, catoptron 13, parallel beam expand device 6.Wherein, holographic dry plate 8 records illumination information, polarization information, projection objective modulation intelligence, mask phase information through interfering exposure.
The projection lithography exposure device comprises laser instrument 1, shutter gate 2, parallel beam expand device 6, holographic dry plate 8, projection objective 5, resist silicon chip 15, silicon chip worktable 16, catoptron 14, each device is laser instrument 1, shutter gate 2, parallel beam expand device 6, holographic dry plate 8, projection objective 5, resist silicon chip 15, silicon chip worktable 16, catoptron 14 along the locus of optical path direction in proper order.Holographic dry plate 8 is positioned on the real-time dry plate frame.
Use projection lithography system of the present invention and realize that the job step of holographic eliminating aberration is as follows:
(1) utilize holographic lighting engineering to make the holographic dry plate exposure.Be divided into two-way light by spectroscope 9 from the light that laser instrument 1 sends after shutter gate 2, one road light is successively through shining on the holographic dry plate 8 this Shu Guangwei object beam behind illuminator 3, polarization control system 4, projection objective 5 and the mask 7.Shine on the holographic dry plate 8 this Shu Guangwei reference beam behind another Lu Guangjing beam expander 6.Suitably select the expansion bundle multiplying power of beam expander 6, to guarantee that object beam has identical spot size with reference beam on holographic dry plate 8.
(2) development of holographic dry plate 8 typing is finished on the dry plate frame in real time, and the dry plate frame can guarantee to finish when holographic dry plate does not move in situ the development type-approval process in real time.
(3) remove other devices except that LASER Light Source 1, shutter gate 2, holographic dry plate 8, projection objective 5, the light that sends with 6 pairs of LASER Light Source 1 of the beam expander in the reference light light path expands bundle, with the direction irradiation holographic dry plate 8 opposite with reference light, this light beam is a playback light, playback light and reference beam be conjugation each other, be that wavefront is identical, the direction of propagation is opposite.The light that holographic dry plate 8 obtains after reproducing projects on the resist silicon chip 15 through projection objective 5 again, the silicon chip 15 of resist utilizes vacuum pump and the sealing tracheae adsorbed close that is attached thereto to be fixed on the automatically controlled Precision Wafer worktable 16, utilize the controller of automatically controlled Precision Wafer worktable to adjust silicon chip worktable 16 and then adjust the relative position that loses agent silicon chip 15 and projection objective, make resist silicon chip 15 vertical with optical axis and be in plane, light beam convergent point place, utilize the 2 control time shutter of shutter gate, finally on resist, obtain and the identical Micropicture of mask 7 figures.
The particular problem decision of required solution is looked in the selection of laser instrument 1.If will utilize this system to carry out the research of high-resolution optical patterning, maybe to utilize its Micropicture that obtains less live width, then should adopt the short laser instrument of wavelength, as ArF quasi-molecule 193nm LASER Light Source.Illuminator 3, polarization control system 4, projection objective 5 and mask 7 are determined according to the demand of concrete photoetching, can select the kohler's illumination system as illuminator 3, polarization control system 4 can be selected Rochon prism, projection objective 5 can be selected 1: 4 full refraction type projection objective system, and mask 7 can be selected 6% attenuation type phase shifting mask.The selection of holographic dry plate 8 determines that by optical maser wavelength the spatial resolution of holographic material should be big as far as possible, also enough environmental stabilities should be arranged simultaneously, can bear certain reproduction light power after the typing of developing.At wavelength is the laser of visible light wave range, can select to have high-resolution photopolymer (as Dupont, PMMA etc.) as the holographic dry plate light-sensitive medium.At the laser of extreme ultraviolet wavelength, can select zinc-oxide film as the holographic light-sensitive medium.Developer solution and style keeping liquid are determined according to holographic dry plate sensitization material.As adopting at the holographic I type of the laser sensitive three ring boards of 632.8nm light sensitive plate, developer solution and stop bath can be selected D-19 and F-5 respectively.
Claims (5)
1. holographic eliminating aberration method, it is characterized in that: at first utilize holographic lighting engineering to expose under given conditions, with illumination information in the photoetching, projection objective modulation intelligence and mask position phase modulation intelligence are recorded on the holographic dry plate simultaneously; Comprised in the modulation intelligence of projection objective the information that doubly contracts of light beam and the aberration information in the imaging process; Utilize mask and illuminator in the alternative traditional projection lithography of holographic dry plate after exposing, adopt the conjugation playback system, the conjugation light wave after order is reproduced enters projection objective once more, has compensated the aberration that projection objective is introduced in imaging process; Carry doubly the contract light beam of information and illumination information of mask modulation intelligence, projection objective and finally make resist exposure, thereby finished the photolithographic exposure process.
2. application rights requires the projection lithography system of 1 described holographic eliminating aberration method, it is characterized in that comprising holographic dry plate exposure device and projection lithography exposure device two parts; The holographic dry plate exposure device comprises laser instrument [1], shutter gate [2], illuminator [3], polarized controller [4], projection objective [5], parallel beam expand device [6], mask [7], holographic dry plate [8], spectroscope [9] and catoptron [10,11,12,13]; More than each device move towards the locus by laser beam and be in proper order: laser instrument [1], shutter gate [2], through spectroscope [9] light beam is divided into two bundles, beam of laser finally shines on the holographic dry plate [8] through catoptron [10], illuminator [3], polarized controller [4], catoptron [11], projection objective [5], mask [7]; Another Shu Jiguang shines on the holographic dry plate [8] through catoptron [12], catoptron [13], parallel beam expand device [6]; Holographic dry plate wherein] [8 through interfering exposure, records illumination information, polarization information, projection objective modulation intelligence, mask phase information;
The projection lithography exposure device comprises laser instrument [1], shutter gate [2], parallel beam expand device [6], holographic dry plate [8], projection objective [5], resist silicon chip [15], silicon chip worktable [16], catoptron [14], more than each device be laser instrument [1], shutter gate [2], parallel beam expand device [6], holographic dry plate [8], projection objective [5], resist silicon chip [15], silicon chip worktable [16], catoptron [14] in proper order along the locus of optical path direction; Holographic dry plate [8] is positioned on the real-time dry plate frame, and the silicon chip [15] that the surface scribbles photoresists is fixed on the automatically controlled Precision Wafer worktable [16] by the vacuum pump adsorbed close.
3. according to the described projection lithography system of claim 2, it is characterized in that: the projection objective of holographic dry plate exposure device [5] has identical enlargement ratio with parallel beam expand device [6] to the light beam that passes through; The laser beam that expands after restrainting through parallel beam expand device [6] is a directional light; The two-beam of telling through spectroscope [9] arrives holographic dry plate [8], and the two-beam optical path difference is sent the temporal coherent length of laser less than laser instrument [1].
4. according to the described projection lithography system of claim 2, it is characterized in that: holographic dry plate exposure device and the two-part laser instrument of projection lithography exposure device [1], shutter gate [2], projection objective [5], parallel beam expand device [6] are same device; The relative space position of holographic dry plate [8] and projection objective [5] is identical in the relative space position of holographic dry plate in the projection lithography system [8] and projection objective [5] and the holographic dry plate exposure device; Holographic dry plate [8] in holographic dry plate in the projection lithography exposure device [8] and the holographic dry plate exposure device is a same holographic dry plate, is installed on the real-time dry plate frame.
5. according to the described projection lithography system of claim 2, it is characterized in that: the holographic dry plate in the projection lithography exposure device [8] has passed through the exposure imaging type-approval process, is the holographic dry plate after the typing of developing; Laser beam after process parallel beam expand device [6] expansion is restrainted in laser beam in the projection lithography exposure device behind process parallel beam expand device [6] the expansion bundle and the holographic dry plate exposure device is the conjugation light beam each other.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104749890A (en) * | 2013-12-25 | 2015-07-01 | 昆山国显光电有限公司 | Exposure method and system of photoetching technology |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104749890A (en) * | 2013-12-25 | 2015-07-01 | 昆山国显光电有限公司 | Exposure method and system of photoetching technology |
| CN104749890B (en) * | 2013-12-25 | 2017-02-15 | 昆山国显光电有限公司 | Exposure method and system of photoetching technology |
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