CN101122519A - Minitype detecting device for monitoring solar ultraviolet index - Google Patents
Minitype detecting device for monitoring solar ultraviolet index Download PDFInfo
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- CN101122519A CN101122519A CNA2007100261247A CN200710026124A CN101122519A CN 101122519 A CN101122519 A CN 101122519A CN A2007100261247 A CNA2007100261247 A CN A2007100261247A CN 200710026124 A CN200710026124 A CN 200710026124A CN 101122519 A CN101122519 A CN 101122519A
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Abstract
A micro detection device for monitoring sunlight ultraviolet index is provided, making use of a GaN based and AlGaN based micro ultraviolet detector, a chip with the size less than 2-3mm2 and the response characteristics within a bandwidth of a spectrum line range with 290nm-400nm wavelength, including ultraviolet A and ultraviolet B. The human signals of the detector is amplified and output by a driving circuit. The driving circuit consists of an amplifying circuit and an AD conversion, signal processing and displaying circuit. The detector is connected with the amplified circuit first, and then is connected with the AD conversion, signal processing and displaying circuit. With the miniaturized GaN based or AlGaN based structured micro ultraviolet detector, the invention has the characteristics of adjustable and continuous band gap, proper bandwidth and fast response speed to the ultraviolet. The sunlight ultraviolet intensity can be directly and properly displayed through a micro amplified integrated circuit and a micro display output device.
Description
One, technical field
The present invention relates to a kind of novel minitype detecting device that is used for monitoring solar ultraviolet index, especially utilize the basic miniature ultraviolet detector of GaN base and AlGaN,
Two, background technology
When skin was subjected to ultraviolet irradiation, the melanocyte in the human epidermal layer began to produce black and usually absorbs ultraviolet ray, came to harm to prevent skin.Long ultraviolet irradiation can cause a large amount of melanin depositions in epidermal area, becomes nonvolatil " tanned " vestige.The tellurian life of ozonosphere protection in the atmospheric envelope is avoided the injury of sunshine intense UV rays.
In recent years, because the destruction that atmospheric advection layer ozone is on the rise, the loss of ozonosphere makes the ultraviolet radiation that arrives earth surface increase, and the amount of ultraviolet irradiation that ground is accepted increases.Accept too much ultraviolet radiation and will cause that DNA changes in the cell, self repair ability of cell weakens, and immunologic mechanism goes down, and makes skin elastosis, angling take place easily so that skin canceration is brought out eyeglass and produced cataract etc.For this reason, the environmentalist of countries in the world all reminds people should pay close attention to ultraviolet radiation to the harm of human body and take the necessary precaution measure.
Harmful ultraviolet ray is divided into ultraviolet light,long wave (UVA), UV-B (UVB), ultraviolet C (UVC).Wherein, wavelength coverage ozonosphere major part in the ultraviolet C of 200nm-290nm will be by atmosphere is absorbed, and can not produce harm to human body.But wavelength coverage can produce harm by atmospheric envelope and to human body at the ultraviolet light,long wave of 320nm-400nm and the UV-B of 290nm-320nm.
Ultraviolet light,long wave (UVA) often touches in daily life, be called as the life ultraviolet ray, its transmissive is to the skin corium of skin inside and collagen tissue, elastoser and the chromatophore of influence maintenance skin elasticity, thereby quicken skin aging and the painted color spots that cause of melanin such as wrinkle and elasticity reduction, its feature and weather conditions are irrelevant.UV-B (UVB) claim the laser ultraviolet ray again, when skin in long term exposure during at strong sunshine, under the irradiation of UV-B, skin will be by saturating red and have symptoms such as pain, inflammation.Therefore, for the protection resident avoids ultraviolet irradiation, avoid shining the various harm that cause because of ultraviolet ray, in recent years, weather bureau forecasts the ultraviolet rays index as the resident usually.
Ultraviolet index is meant, when the position of the sun on high is the highest (generally be at noon before and after, promptly from the morning ten in the time period at 3 o'clock in afternoon), arrive ultraviolet radiation in the sunray of earth surface to the possible degree of injury of human body skin.The ultraviolet index variation range represents that with the numeral of 0-15 usually, the ultraviolet index at night is 0, and the ultraviolet index the when torrid zone, highlands, fine day is 15.When ultraviolet index heals when high, the expression ultraviolet radiation is acute further to the erythema degree of injury of human body skin, and similarly, ultraviolet index is higher, and the injury to skin in the shorter time is also bigger.
Because area and time is different, the difference of ultraviolet rays is bigger, and simultaneously, the ultraviolet index of weather bureau's forecast can't provide ultraviolet index exactly in good time.
Existing ultraviolet rays measurement mechanism is not easy to the individual and carries, and individual acquisition cost height is not easy to monitor at any time and grasp the radiation intensity of ultraviolet rays, in time takes safeguard procedures.
Be the wide direct band-gap semicondictor of III-V family of representative with GaN because have band gap wide (Eg=3.39eV), luminescence efficiency height, electron drift saturated velocity height, thermal conductivity height, hardness is big, specific inductive capacity is little, chemical property is stable and radioresistance, characteristics such as high temperature resistant, in field of electronic devices such as optoelectronic devices such as high brightness blue light-emitting diode, blue laser and ultraviolet detector and radioresistance, high frequency, high temperature, high pressure huge application potential and vast market prospect are arranged, cause people's very big interest and extensive concern.AlN and GaN, the III-V compound semiconductor that belongs to the broad stopband, be a kind of important uv materials, add that it has other important physical propertys such as high thermal conductivity, low thermal expansivity and piezoelectric effect and has a wide range of applications in fields such as electricity, optics.It is adjustable continuously that the AlGaN ultraviolet detector has band gap, and high quantum efficiency, suitable bandwidth, fast characteristic and detector chip microminiaturizations such as response speed have caused people's very big interest.
Three, summary of the invention
For addressing the above problem, the present invention seeks to: utilize the GaN base or the miniature ultraviolet detector chip of AlGaN based structures of MOCVD (metal organic-matter chemical vapour phase epitaxy) method synthetically grown, adopt the microcircuit drive system of integrated circuit (IC) design and a kind of minitype detecting device that is used for monitoring solar ultraviolet index of liquid crystal micro demonstration or other miniature voice and image system integration.This device all has advance in design, integrated and use field.The measurement display device of a kind of solar ultraviolet intensity that the object of the invention especially adopts the display panels of the microcircuit driving circuit of integrated circuit (IC) design and miniature demonstration or other miniature sound, constitute as, light display system, this device can be widely used in all removable and portable instrument and equipments such as wrist-watch, mobile phone, toy.Have miniature, detect the function of ultraviolet rays intensity in good time.
The technology of the present invention solution is: the minitype detecting device that is used for monitoring solar ultraviolet index, adopt GaN base or the miniature ultraviolet detector chip of AlGaN based structures, the present invention utilizes MOCVD (metal organic-matter chemical vapour phase epitaxy) method synthetically grown, adopts the drive circuit system of integrated circuit (IC) design and a kind of minitype detecting device that is used for monitoring solar ultraviolet index of liquid crystal micro demonstration or other miniature voice and image system integration.By driving circuit detector people signal is amplified output, driving circuit is to be made of amplifying circuit and AD conversion and signal Processing and display circuit, and detector connects amplifying circuit earlier and connects AD conversion, signal Processing and display circuit again.
This device be can be used in all removable and portable instrument and equipments such as wrist-watch, mobile phone, toy by 1.5 volts or 3 volts of button cell power drives.Adopt the micro drives Circuits System of integrated circuit (IC) design again, a kind of novel minitype detecting device that is used for monitoring solar ultraviolet index of liquid crystal micro demonstration or other miniature voice and image system integration.
The present invention is made of three parts, and at first the key of design solution is to utilize microminiaturized GaN base or the miniature ultraviolet detector chip of AlGaN based structures, and chip size is less than 2-3mm.Response characteristic in the suitable bandwidth that comprises ultraviolet light,long wave and UV-B spectral line scope of 290nm-400nm; Next is the micro drives Circuits System that driving circuit adopts the integrated circuit (IC) design of button cell, it is to be made of through AD conversion and signal Processing and display circuit amplifying circuit that this driving circuit constitutes, AD conversion and signal Processing and display circuit can constitute by a microprocessor, the response signal of the corresponding different ultraviolet bands of detector chip is amplified and process ultraviolet index correction back output, directly provide the ultraviolet index signal, this driving circuit integrated package size of using little process chip formation is less than 20mm*20mm; Be that liquid crystal micro shows or other miniature voice and image system that this system and the integrated overall dimensions of above-mentioned device are less than 20mm*20mm at last, thickness is less than 5mm.
4. mechanism of the present invention and technical characterstic:
It is adjustable continuously to utilize microminiaturized GaN base or the miniature ultraviolet detector of AlGaN based structures that ultraviolet rays is had band gap, high quantum efficiency, suitable bandwidth, fast characteristics such as response speed show solar ultraviolet intensity by miniature amplification circuit and miniature demonstration output unit directly, in good time.This device characteristic is that response speed is fast to the ultraviolet-responsive sensitivity, structure miniization, and cost is low, and timeliness is good etc.Use 1.5 volts or 3 volts of button cell power drives.
The measurement display device of a kind of solar ultraviolet intensity that the present invention adopts the display panels of the microcircuit driving circuit of integrated circuit (IC) design and miniature demonstration or other miniature sound, constitute as, light display system, this device can be widely used in all removable and portable instrument and equipments such as wrist-watch, mobile phone, toy.Have miniature, detect the function of ultraviolet rays intensity in good time.
Four, description of drawings
Fig. 1 uses the circuit block diagram of AlGaN/GaN base ultraviolet detector chip for the present invention
Fig. 2 is a kind of AlGaN/GaN base of employing of the present invention RCE pin ultraviolet detector response diagram.This detector adopts Ti/Al, and Ni/Au does ohmic metal, and at the 297nm wave band, the responsiveness of device is 0.0064A/W under 0 volt of bias voltage; At the 323nm wave band, the responsiveness of device is 0.005A/W under the zero volt bias condition.
A kind of GaN p-i-n type explorer response spectrum that Fig. 3 adopts for the present invention, the peak response degree reaches 0.17A/W under 0 bias voltage.Just, back illumination GaN base AlGaN/GaN heterojunction p-i-n type detector, all obtained the window response of 290-360nm.For the application that needs window to survey lays the foundation.
Fig. 4 is the block scheme of apparatus of the present invention.The integrated overall dimensions of whole device is less than 20mm*20mm, and thickness is less than 5mm.Fig. 5 is the system, control circuit figure that the present invention includes miniature ultraviolet detection chip.
Five, embodiment
The present invention utilizes the GaN base and the AlGaN base ultraviolet detector of MOCVD (metal organic-matter chemical vapour phase epitaxy) epitaxial growth system development, adopts the sound of the drive circuit chip of integrated circuit (IC) design and microminiaturization, as, light display system.Specifically comprise following a few step:
1, utilizes the GaN base and the AlGaN base ultraviolet detector of the development of MOCVD (metal organic-matter chemical vapour phase epitaxy) epitaxial growth system.The detector chip size is less than 2-3mm, i.e. 4-9mm
2In the suitable bandwidth that comprises ultraviolet light,long wave and UV-B spectral line scope of 290nm-400nm, has response characteristic.
2, typical A lGaN base ultraviolet detector structure is: GaN base ultraviolet detector or AlGaN base ultraviolet detector; One of structure is that the resonance of AlGaN base strengthens the monochromatic ultraviolet detector, be provided with low temperature and the high temperature GaN material of thickness at 50-2000nm on Sapphire Substrate, the distribution Bragg reflector of AlN/AlGaN sandwich construction that is respectively equipped with 5-50 the cycle of 15-80nm and 15-100nm on the GaN material is an end mirror; On mirror of the above-mentioned end, be provided with the resonator cavity of n-AlxGa1-xN/i-GaN/p-AlxGa1-xN structure: promptly be provided with the thick high temperature n-AlxGa1-xN of 20-80nm, the high temperature i-GaN absorption layer that 5-30nm is thick, the high temperature p-AlxGa1-xN that 20-80nm is thick, Al component x 〉=0.3 resonator cavity as detector; Be at last bed thickness 0-30 cycle being respectively 15-80nm and 15-100nm the AlN/AlGaN sandwich construction distribution Bragg reflector promptly the top mirror finish the RCE UV detector structure.
3, shown in Figure 5, driving circuit is made of through AD conversion and signal Processing and display circuit amplifying circuit, AD conversion and signal Processing and display circuit can constitute by a microprocessor, the response signal of the corresponding different ultraviolet bands of detector chip is amplified and process ultraviolet index correction back output, directly provide the ultraviolet index signal.Driving circuit adopts the micro drives Circuits System of the integrated circuit (IC) design of 1.5 volts or 3 volts button cell power drives, as shown in the figure, this driving circuit will amplify the response signal of the corresponding different ultraviolet bands of detector chip and proofread and correct back output through ultraviolet index, directly provide the ultraviolet index signal, this driving circuit integrated package size is less than 20mm*20mm.Shown in circuit block diagram, constitute by detector, signal amplification circuit, A/D convertor circuit, signal processing circuit, display circuit, microprocessor XTAL1 or XTAL2 finish A/D convertor circuit and display circuit, signal processing circuit constitute,
4, adopt liquid crystal micro to show or other miniature sound, as, photosystem, this system and the integrated overall dimensions of above-mentioned device are less than 20mm*20mm, thickness is less than 5mm.
5, the novel minitype detecting device overall dimensions that is used for monitoring solar ultraviolet index that is made of said units is less than 20mm*20mm, and thickness is less than 5mm.
Claims (3)
1. the minitype detecting device of monitoring solar ultraviolet index, it is characterized in that utilizing GaN base and the miniature ultraviolet detector of AlGaN base, chip size less than 2-3mm, the response characteristic in the bandwidth that comprises ultraviolet light,long wave and UV-B spectral line scope of 290nm-400nm wavelength; And detector people signal is amplified output by driving circuit, and driving circuit is to be made of amplifying circuit and AD conversion and signal Processing and display circuit, detector connects amplifying circuit earlier and connects AD conversion, signal Processing and display circuit again.
2. by the minitype detecting device of the described monitoring solar ultraviolet index of claim 1, it is characterized in that ultraviolet detector adopts the AlGaN base ultraviolet detector, the structure that AlGaN base resonance strengthens the monochromatic ultraviolet detector is: be provided with low temperature and the high temperature GaN material of thickness at 50-2000nm on Sapphire Substrate, the distribution Bragg reflector of AlN/AlGaN sandwich construction that is respectively equipped with 5-50 the cycle of 15-80nm and 15-100nm on the GaN material is an end mirror; On mirror of the above-mentioned end, be provided with the resonator cavity of n-AlxGa1-xN/i-GaN/p-AlxGa1-xN structure: promptly be provided with the thick high temperature n-AlxGa1-xN of 20-80nm, the high temperature i-GaN absorption layer that 5-30nm is thick, the high temperature p-AlxGa1-xN that 20-80nm is thick, Al component x 〉=0.3 resonator cavity as detector; Be at last bed thickness 0-30 cycle being respectively 15-80nm and 15-100nm the AlN/AlGaN sandwich construction distribution Bragg reflector promptly the top mirror finish the RCE UV detector structure.
3. by the minitype detecting device of the described monitoring solar ultraviolet index of claim 1, it is characterized in that AD conversion and signal Processing and display circuit constitute with a microprocessor; Driving circuit adopts 1.5 volts or 3 volts of button cell power supplys.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100261247A CN101122519A (en) | 2007-08-15 | 2007-08-15 | Minitype detecting device for monitoring solar ultraviolet index |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100261247A CN101122519A (en) | 2007-08-15 | 2007-08-15 | Minitype detecting device for monitoring solar ultraviolet index |
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| CN101122519A true CN101122519A (en) | 2008-02-13 |
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| CNA2007100261247A Pending CN101122519A (en) | 2007-08-15 | 2007-08-15 | Minitype detecting device for monitoring solar ultraviolet index |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103616072A (en) * | 2013-12-06 | 2014-03-05 | 中国电子科技集团公司第四十四研究所 | Ultraviolet index monitoring module |
| CN105633193A (en) * | 2014-10-31 | 2016-06-01 | 中国科学院物理研究所 | Adjustable-response-wavelength ultraviolet detector |
| CN106840390A (en) * | 2017-01-16 | 2017-06-13 | 杭州紫元科技有限公司 | Monitoring method and device of a kind of light radiation to people's eye injury |
-
2007
- 2007-08-15 CN CNA2007100261247A patent/CN101122519A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103616072A (en) * | 2013-12-06 | 2014-03-05 | 中国电子科技集团公司第四十四研究所 | Ultraviolet index monitoring module |
| CN105633193A (en) * | 2014-10-31 | 2016-06-01 | 中国科学院物理研究所 | Adjustable-response-wavelength ultraviolet detector |
| CN106840390A (en) * | 2017-01-16 | 2017-06-13 | 杭州紫元科技有限公司 | Monitoring method and device of a kind of light radiation to people's eye injury |
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