CN1011200B - Technological process equipment for purifying xenon - Google Patents
Technological process equipment for purifying xenonInfo
- Publication number
- CN1011200B CN1011200B CN 87101534 CN87101534A CN1011200B CN 1011200 B CN1011200 B CN 1011200B CN 87101534 CN87101534 CN 87101534 CN 87101534 A CN87101534 A CN 87101534A CN 1011200 B CN1011200 B CN 1011200B
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- China
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- xenon
- adsorber
- temperature
- reactor
- present
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Abstract
The present invention relates to a flow path and a device used for purifying crude xenon (99.9%). The device of the present invention is mainly composed of a catalytic reactor and an absorber. When the present invention is used, pure xenon with the purity of 99.999% can be prepared by the primary purification of crude xenon, the one-way extraction rate of the xenon can reach 89%, the recovery rate of the crude xenon can reach 98%, and the adapting processing capacity is from 50 to 300 liters/hour. Compared with the existing flow path and device, the flow path and the device of the present invention have the advantages of simplified flow path and device, convenient operation, little energy consumption, and high extraction rate and recovery rate.
Description
The invention belongs to gas sweetening and krypton xenon adsorption separation technology field, utilize flow process of the present invention or equipment can prepare high-purity (99.999%) xenon by thick xenon (99.9%).
Xenon purifies general catalysis-absorption or the catalytic rectification process of adopting.In existing production technology, adopt more as follows as West Germany's woods moral (Linde) its main points of Production Flow Chart equipment that company had:
1. to the purification of active impurity in the rough xenon gas, be, decompose its active impurity by catalyzed reaction, then to its product absorb, absorption and freezing the discharge.As add H
2O
2Remove N by reacting down
2O and CH
4:
2. the separation of xenon krypton is to adopt acticarbon or rectification method to remove.
Adopt this flow process and equipment, owing to need to add gas removing active ingredient, thereby increased impurity and separate and absorption equipment, numerous and diverseization of flow process not only, and the xenon extraction yield is not high, and in particular for obtaining high purity xenon (99.999%), this method is particularly unfavorable.In addition, utilize krypton gas in the acticarbon isolation of purified xenon, effect is inexcellent yet.The general more complicated of this flow process and equipment, the xenon extraction yield is also lower.
It is simple to the objective of the invention is to design a kind of process, the equipment of the xenon purification process that the xenon extraction yield is high.
Xenon purification process of the present invention purifies two portions by catalytic purification and xenon Krypton adsorption and forms.Partly adopt composite catalyst filling reaction tubes at catalytic purification, just whole active impurities reaction chemical combination can be removed after making thick xenon unstripped gas by reaction tubes, thereby eliminate this part impurity.It can exempt complicated reactants separate and the absorption process of a cover.The xenon Krypton adsorption purifies part and adopts the modified molecular screen sorbent material, can the high absorption krypton gas of selecting and make xenon be able to purifying.
Xenon treating plant of the present invention is by reactor (4), temperature of reactor control device (5), and adsorber (7), four major portions such as adsorber cryogenic thermostat control device (8) are formed.Its equipment flowsheet such as Fig. 1.
In Fig. 1,1. unstripped gas intake valve; 2. velocimeter; 3.6. tensimeter; 4. reactor; 5. temperature of reactor control device; 7. adsorber; 8. adsorber cryogenic thermostat control device; 9.11. valve; 10. connect chromatograph.
Scavenging process is, unstripped gas is by valve (1) access arrangement, and temperature of reactor control device (5) controlling reactor (4) is in certain temperature of reaction.Unstripped gas removes active impurity after by reactor (4), enters adsorber (7), removes krypton gas, and the cryogenic thermostat control device keeps adsorber in certain low temperature.Carry out stratographic analysis by valve (9) to purifying back gas, product is charged in the gas cylinder by valve (11).
The structure of catalyticreactor of xenon treating plant (4) and adsorber (7) is as figure (2).
Fig. 2 A is the structure iron of catalyticreactor (4).Wherein, 1. reaction tubes; 2. perforated baffle; 3. inlet mouth; 4. venting port.Reaction tubes (1) employing metallic hard material such as stainless steel, copper, iron etc., reaction tubes is withstand voltage greater than 8 normal atmosphere.Reaction tubes φ=10~50mm, reaction tube length is L/D:10~20 with the diameter ratio.
Fig. 2 B is the structure iron of adsorber (7).1. joint flanges wherein; 2. adsorption tube; Adsorber is made by copper or stainless copper pipe, and is withstand voltage greater than 8 normal atmosphere.Adsorption tube φ: 30~50mm, but adsorber helically, L/D:80~100.
During use equipment, at first system vacuumizes (1
), temperature of reactor is controlled at t350~650 ℃, and adsorber is controlled at-30~-75 ℃.Gas meter presses (3) to be controlled at 1.5~5.5 normal atmosphere before the reactor.Purify back gas deliver to chromatogram (10) assay determination qualified after, by valve (11) product is delivered to gas cylinder.When krypton gas content reaches 40ppm in the product to adsorber in molecular sieve regenerate, the useless xenon of discharge to gas cylinder is stored and to be sent in the krypton xenon gas mixture container again.Proceed preceding operation after the adsorbent of molecular sieve regeneration.
To containing N
2O, NO, CH
4, O
2, CO, CO
2, Kr thick xenon Primordial Qi after purifying pure xenon, as table 1.
Its extraction yield is 90%, and its extraction yield is 60% when Kr content<10ppm.
Example 1.
Under following condition, unstripped gas is carried out purifying treatment, result such as table 2.
1. pressure 2~5atm before the reactor
2. flow: 50~300l/hr
3. temperature: 350~650 ℃ of temperature of reactor; Adsorber temperature-75~-30 ℃.
The xenon extraction rate is 86.5%, and the thick xenon rate of recovery is 98.5%, 1 meter of thick xenon treatment capacity
3
Example 2.
Condition such as example 1 the results are shown in Table 3.
The xenon extraction yield is 89%, and the thick xenon rate of recovery is 98%.
The present invention is used for the purification of thick xenon (99.9%), owing in catalyzed reaction, can remove all active impurities wherein, and by krypton in the modified molecular screen sorbent material purification xenon, the unstripped gas primary purification gets final product to such an extent that purity reaches 99.999% pure xenon, the one way extraction yield of xenon can reach 89%, and the thick xenon rate of recovery is 98%.Adapt to processing power and be 50~300 liters/time.Compare with equipment with the flow process that present production is used, flow process and equipment are simplified greatly, and is easy to operate, and energy consumption is little, and extraction yield and the rate of recovery improve a lot.
Table 1. xenon treating plant performance (unit: ppm)
Foreign gas N
2O NO CH
4N
2CO CO
2Kr O
2
Foreign matter content<100<100<50<200<100<100<500<200
Purify back content<0.1<0.1<0.1<2.0<0.5<0.5<25<0.5
Table 2. example 1 result
Unstripped gas N
2O N
2O
2CO
2Kr
Foreign matter content ppm 20 800 500 50 3000
Purify back content ppm<0.1<2.0<0.5<0.1<25
Table 3. example 2 results
Unstripped gas N
2O N
2O
2CH
4CO Kr
Foreign matter content ppm 50 200 50 20 10 500
Purify back content ppm<0.1<2.0<0.2<1.0<0.1<25
Claims (2)
1, a kind of xenon gas purification device that adopts catalyzed reaction and adsorption separation technology, be by the filling composite catalyst, can make various active impurity reactions in thick xenon (99.9%) unstripped gas and the catalyticreactor of removing (4), the temperature-control device of reactor (5) is by filling modified molecular screen sorbent material, can isolate adsorber (7) and (8) four major portions of adsorber cryogenic thermostat control device of high-purity xenon (99.999%) from remove the thick xenon after various activity are sought matter forms, it is characterized in that catalyticreactor (4) is by stainless steel, copper, reaction tubes that metallic substance such as iron are made (1) and perforated baffle (2) are formed, reaction tubes (1) diameter is 10~50mm, reaction tube length is L/D, 10~20 with the diameter ratio.
2, carry out xenon according to the described xenon gas purification device of claim 1 and purify, it is characterized in that the temperature of reactor (4) is controlled at 350~650 ℃; The temperature of adsorber (7) is controlled at-30~-75 ℃.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 87101534 CN1011200B (en) | 1987-04-13 | 1987-04-13 | Technological process equipment for purifying xenon |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 87101534 CN1011200B (en) | 1987-04-13 | 1987-04-13 | Technological process equipment for purifying xenon |
Publications (2)
Publication Number | Publication Date |
---|---|
CN87101534A CN87101534A (en) | 1988-10-26 |
CN1011200B true CN1011200B (en) | 1991-01-16 |
Family
ID=4813505
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN 87101534 Expired CN1011200B (en) | 1987-04-13 | 1987-04-13 | Technological process equipment for purifying xenon |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN1011200B (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1085188C (en) * | 1997-04-17 | 2002-05-22 | 张鸿逵 | Method for extracting high-purity krypton, xenon from mixed gas containing oxygen, krypton, xenon. |
CN104310325B (en) * | 2014-10-24 | 2016-06-29 | 武汉钢铁(集团)公司 | Krypton, xenon-133 gas purification method and device |
CN106994295A (en) * | 2017-05-23 | 2017-08-01 | 核工业理化工程研究院 | Isotope gas purifying processing device |
-
1987
- 1987-04-13 CN CN 87101534 patent/CN1011200B/en not_active Expired
Also Published As
Publication number | Publication date |
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CN87101534A (en) | 1988-10-26 |
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