CN101114602A - Device and method for detecting metal etching defect - Google Patents
Device and method for detecting metal etching defect Download PDFInfo
- Publication number
- CN101114602A CN101114602A CNA2006100294640A CN200610029464A CN101114602A CN 101114602 A CN101114602 A CN 101114602A CN A2006100294640 A CNA2006100294640 A CN A2006100294640A CN 200610029464 A CN200610029464 A CN 200610029464A CN 101114602 A CN101114602 A CN 101114602A
- Authority
- CN
- China
- Prior art keywords
- detecting
- luminescence
- spectrum
- etching
- metal etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Abstract
The invention provides a metal etching defect detecting device and the detecting method, the invention integrates the spectrum device, the recording device and the treatment device and has the functions of detecting, recording and calculating. The metal etching defect detecting method of the invention selects the excitation spectrum message of the metal etching defect structure and stores and calculates the spectrum message, and outputs the analyzable graph. The magnetic field cycle parameter can be introduced properly, and the analysis technique applied in the reinforced excitation spectrum can be integrated, achieving fast detecting of the metal etching defect and being synchronous with the magnetic field cycle.
Description
Technical field
The present invention relates to a kind of metal etching defect arrangement for detecting and method for detecting thereof, it can be detected, write down the union metal etching defect and cause living phot-luminescence spectrum information, by the arrangement for detecting and the method for detecting thereof of cracks of metal surface after the analysis etching.
Background technology
Semiconductor technology is commonly used to chamber etching (Chamber Etching) technology, plasma etching method (PlasmaEtching) for example, reactive ion etching (Reactive Ion Etching, RIE) or ise (Sputter Etching) etc., the defective that these etchings cause often can provide the reference information of process modification, so the etching method for detecting imports etching technics, help interpretation by cracks of metal surface, understand in real time and improve etching technics, generally speaking, rate of finished products lifting for the technology common concern has positive meaning, also can reduce production costs indirectly.
Under chamber etching environment, be difficult for carrying out defect detection, be subject to the operation of etching apparatus during enforcement, if being passed in and out etching cavity repeatedly, the etching object carries out the surface detecting, not only efficient is low, and need bear part danger; In addition, general luminescence exitation spectrum (Optical Emission Spectroscopy, EOES) analytical method is difficult for and the magnetic field synchronization, and this phenomenon may cause the accuracy of structural analysis, directly influence the conclusion of aforementioned industrial analysis, the industry influence power can not be ignored.
Summary of the invention
Main purpose of the present invention is, a kind of metal etching defect arrangement for detecting and method for detecting thereof are provided, so that measure the arrangement for detecting and the method for detecting thereof of metal etching defect.
Another object of the present invention is to, a kind of metal etching defect arrangement for detecting and method for detecting thereof are provided, it can measure the arrangement for detecting and the method for detecting thereof of metal etching defect fast.
A further object of the present invention is, a kind of metal etching defect arrangement for detecting and method for detecting thereof are provided, its can with the arrangement for detecting and the method for detecting thereof of the metal etching defect of magnetic field cycle synchronisation.
For reaching above-mentioned purpose, metal etching defect arrangement for detecting of the present invention comprises spectral device, tape deck and processing unit, with spectral device detecting, classification phot-luminescence spectrum information, with the recording device records spectral information, and with processing unit according to the necessary figure of spectral information output, for the usefulness of material structure analysis; Metal etching defect method for detecting of the present invention, the phot-luminescence spectrum information of its acquisition metal etching defect structure, and spectral information stored, last computing spectral information output can be for the chart of analyzing, in the middle of can suitably introduce the magnetic field cycle parameter, and can integrate the analytical technology that is applied to strengthen luminescence exitation spectrum.
Further specify the present invention below in conjunction with drawings and Examples.
Description of drawings
Fig. 1 implements schematic diagram for metal etching defect arrangement for detecting of the present invention.
Fig. 2 is a metal etching defect method for detecting schematic flow sheet of the present invention.
Label declaration
1 metal etching defect arrangement for detecting
12 spectral devices
122 optical detecting devices
124 spectroanalysis instruments
14 tape decks
16 processing unit
2 etching cavities
Embodiment
The invention provides a kind of metal etching defect arrangement for detecting and method for detecting thereof, it is to utilize luminescence exitation spectrum to judge the arrangement for detecting and the method for detecting thereof of metal etching defect, can be applicable to strengthen the luminescence exitation spectrum detection method.
Metal etching defect arrangement for detecting provided by the invention as shown in Figure 1, metal etching defect arrangement for detecting 1 mainly comprises mutual integration, one of link to use spectral device 12, a tape deck 14 and a processing unit 16; Wherein etching cavity 2 can be to use in plasma etching (Plasma Etching), reactive ion etching (Reactive Ion Etching, RIE) or the board of ise (Sputter Etching), wherein spectral device 12 includes an optical detecting device 122 and a spectroanalysis instrument 124 at least.
Please consult metal etching defect method for detecting shown in Figure 2 simultaneously, details are as follows:
Step S01:
Collect the phot-luminescence spectrum information that metal defect produces in the etching technics, this step indication is collected the phot-luminescence spectrum information, mainly comprise information such as wavelength, number of times, energy and wavelengths characteristic, stored for future use after these data collections are appropriate, treat that spectrometry procedure gives access, computing, to obtain necessary conclusion.
During enforcement, with the optical detecting device in the spectral device 122 measure, respond to, capture or classify in the aforementioned etching cavity luminescence exitation spectrum and the correlation spectrum information that etching metal defect produces, for example wavelength, number of times, energy etc.; With the information such as wavelengths characteristic of spectroanalysis instrument 124 analysis luminescence exitation spectrums, wavelengths characteristic is subjected to influencing of material category, film thickness, membrane stress, deposition or etching rate factor usually, and these influencing factors also are that the present invention wishes to detect.
Step S02:
With a tape deck 14 and a processing unit 16, write down union phot-luminescence spectrum information respectively, this step mainly at arrangement and classification spectral information, is beneficial to the follow-up spectrum analysis of carrying out; Wherein tape deck 14 and processing unit 16 close fit, the former is in order to write down the spectral information of aforementioned classification, the latter handles these spectral informations that has write down, just need tape deck 14 to have bigger memory buffering when data are various usually, in case processing unit 16, causes the omission of data not as good as process informations and the impact analysis result.
Step S03:
Adopt and strengthen luminescence exitation spectrum (Enhanced Optical Emission Spectroscopy, EOES), the spectral information of oneself putting in order analyzes wavelengths characteristic, the purpose of this step is to differentiate that metal is subjected to the corrosion surface characteristic, because detecting is directly to be incorporated in the etching technics, equal to be connected on a proving program thereafter, the unanimity that this analysis result will help to improve the technology shortcoming in real time and guarantee etching effect.
Step S04:
Quote end points (End-Point) calculation analytical technology, and introduce the magnetic field cycle parameter, make metal etching defect method for detecting provided by the invention can with the magnetic field cycle synchronisationization, overcome the restriction that prior art is implemented.
Step S05:
Draw and analyze the time dependent broken line graph of phot-luminescence spectral intensity, the conclusion of this step collocation step S04, in order to differentiate actual after etching the metal defect structure, with method for detecting provided by the invention, can reach convenient and detect the effect of metal etching defect fast.
Above-described only is a preferred embodiment of the present invention; be not to be used for limiting scope of the invention process; therefore all equivalent variations and modifications of being done according to the described shape of the present patent application claim, structure, feature and spirit all should be encompassed in protection scope of the present invention.
Claims (6)
1. metal etching defect arrangement for detecting, this arrangement for detecting can be applicable to the chamber etching technics, it is characterized in that comprising:
Yi Guang Spectrum Installed puts, and is used to measure and wavelengths characteristic, energy size and the energy level of the luminescence exitation spectrum of classifying;
One tape deck, it is linked to this spectral device, is used to write down the data of this spectral device output; And
One processing unit, it is linked to this tape deck, is used to handle the data of this recording device records of union.
2. metal etching defect arrangement for detecting according to claim 1, it is characterized in that: described spectral device comprises an optical detecting device and a spectroanalysis instrument, this optical detecting device is used to detect wavelength, number of times and the energy of this luminescence exitation spectrum, and this spectroanalysis instrument is used to analyze the wavelengths characteristic of this luminescence exitation spectrum.
3. a metal etching defect arrangement for detecting method for detecting is applied to the chamber etching technics, may further comprise the steps:
Collect the phot-luminescence spectrum information that this etching technics produces defective;
This phot-luminescence spectrum information of record union;
Adopt and strengthen this luminescence exitation spectrum of phot-luminescence analysis of spectrum;
Input magnetic field cycle parameter in end points calculation rule; And
Draw and analyze the time dependent broken line graph of this phot-luminescence spectral intensity.
4. metal etching defect arrangement for detecting method for detecting according to claim 3 is characterized in that: described etching technics is plasma etching or reactive ion etching or ise.
5. method for detecting according to claim 3 is characterized in that: described magnetic field cycle parameter number range is 0.1 to 5.
6. metal etching defect arrangement for detecting method for detecting according to claim 3 is characterized in that: described phot-luminescence spectral intensity is a percentage, and this chronomere is second.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100294640A CN100474548C (en) | 2006-07-27 | 2006-07-27 | Device for detecting metal etching defect |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100294640A CN100474548C (en) | 2006-07-27 | 2006-07-27 | Device for detecting metal etching defect |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101114602A true CN101114602A (en) | 2008-01-30 |
| CN100474548C CN100474548C (en) | 2009-04-01 |
Family
ID=39022839
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006100294640A Expired - Fee Related CN100474548C (en) | 2006-07-27 | 2006-07-27 | Device for detecting metal etching defect |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100474548C (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103459087A (en) * | 2011-03-25 | 2013-12-18 | 斯奈克玛 | Method of inspecting impacts observed in fan casings |
| CN104037103A (en) * | 2013-03-04 | 2014-09-10 | 阿自倍尔株式会社 | Fault Detecting System And Fault Detecting Method |
| CN108037085A (en) * | 2017-11-29 | 2018-05-15 | 日照职业技术学院 | Surface of workpiece defect inspection method based on spectral signature |
-
2006
- 2006-07-27 CN CNB2006100294640A patent/CN100474548C/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103459087A (en) * | 2011-03-25 | 2013-12-18 | 斯奈克玛 | Method of inspecting impacts observed in fan casings |
| CN103459087B (en) * | 2011-03-25 | 2016-12-07 | 斯奈克玛 | Detection is the method hitting trace of observation in blower housing |
| CN104037103A (en) * | 2013-03-04 | 2014-09-10 | 阿自倍尔株式会社 | Fault Detecting System And Fault Detecting Method |
| CN104037103B (en) * | 2013-03-04 | 2017-04-12 | 阿自倍尔株式会社 | Fault Detecting System And Fault Detecting Method |
| CN108037085A (en) * | 2017-11-29 | 2018-05-15 | 日照职业技术学院 | Surface of workpiece defect inspection method based on spectral signature |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100474548C (en) | 2009-04-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| WO2018121121A1 (en) | Method for use in subtracting spectrogram background, method for identifying substance via raman spectrum, and electronic device | |
| WO2018121122A1 (en) | Raman spectroscopy detection method for checking goods, and electronic device | |
| US9293298B2 (en) | Defect discovery and inspection sensitivity optimization using automated classification of corresponding electron beam images | |
| JP5131211B2 (en) | Optical emission spectrometer | |
| CN109781622B (en) | Portable intelligent metal ore type quick distinguishing instrument | |
| CN108780048A (en) | A kind of method, detection device and the readable storage medium storing program for executing of determining detection device | |
| JP2018527559A (en) | System and method for adjusting cytometer measurements | |
| CN108398416A (en) | A kind of mix ingredients assay method based on laser Raman spectroscopy | |
| US20180067048A1 (en) | Unknown Sample Determining Method, Unknown Sample Determining Instrument, and Unknown Sample Determining Program | |
| CN100474548C (en) | Device for detecting metal etching defect | |
| CN108007912B (en) | Spectrum correction analysis device, correction analysis method, and drug authenticity determination system | |
| CN116985183A (en) | Quality monitoring and management method and system for near infrared spectrum analyzer | |
| KR101937499B1 (en) | Remote chemical assay classification | |
| CN114970164A (en) | Refined steel classification quantitative method and portable system | |
| CN102103079B (en) | Spectrum analysis method | |
| CN109598245B (en) | Edible oil transverse relaxation attenuation curve signal feature extraction method based on 1D-CNN | |
| WO2018121151A1 (en) | Method for identifying raman spectrogram, and electronic device | |
| CN113791062A (en) | Method for judging fixed substance type based on Raman spectrum | |
| CN112378892B (en) | Cosmetic authenticity nondestructive identification method based on Raman spectrum | |
| CN113466206A (en) | Raman spectrum analysis system based on big data | |
| CN113640272A (en) | Spectral library establishing and detecting method based on portable Raman spectrometer and application | |
| CN113445099A (en) | Bath solution analysis method and device and computer readable storage medium | |
| CN111126496B (en) | Method for determining type of solid insulating material of transformer | |
| CN110658178A (en) | Fluorescence background subtraction method for Raman spectrum | |
| TW200809181A (en) | Metallic etching defect detection method and the apparatus thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090401 |