CN101114456A - Magnetic sensor and magnetic disk apparatus - Google Patents
Magnetic sensor and magnetic disk apparatus Download PDFInfo
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- CN101114456A CN101114456A CNA2007100964986A CN200710096498A CN101114456A CN 101114456 A CN101114456 A CN 101114456A CN A2007100964986 A CNA2007100964986 A CN A2007100964986A CN 200710096498 A CN200710096498 A CN 200710096498A CN 101114456 A CN101114456 A CN 101114456A
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- electrode layer
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- screen layer
- magnetoresistive element
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Abstract
The present invention provides a tunnel-effect type magnetoresistive head (120) which can prevent degradation of a tunnel-effect type magnetoresistive effect element caused by contact with a magnetic recording medium without degrading a shielding effect. In this tunnel-effect type magnetoresistive head (120), for the above purpose, an exposed surface area of a shield and electrode layer, which is viewed from an air bearing surface, is decreased, and a shield layer is also provided outside the shield and electrode layer.
Description
Technical field
The present invention relates to Magnetic Sensor that the magnetic information from disk is reproduced.
Background technology
Require disk set to increase its memory capacity, and increased the recording density of disk.In order to increase recording density, must reduce zone between the bit of disk to increase recordable number of signals.Yet when the zone between the bit reduced, the size that forms the magnet in the zone between the bit reduced, so the magnetic flux (magnetic flux) that is produced by this magnet also reduces.Therefore, unless reduce the flying height (flying height) of magnetic head, otherwise this magnetic flux can't be offered Magnetic Sensor.
When reducing the flying height of magnetic head, the air cushion surface (air bearing surface) of magnetic head is contacted with disk.When air cushion surface is contacted with disk, can therefore produce heat.When consequent heat for example was transmitted to Magnetic Sensor, this Magnetic Sensor may damage, and the signal that reads thus can have noise, made institute's quality of signals that reads reduce.
As the prior art document relevant with Magnetic Sensor, mode that can example proposes TOHKEMY 2000-215415 communique and TOHKEMY 2002-026423 communique.
In order to suppress the generation of heat, for example, can envision a kind of method, wherein, reduce also to form the width of the guarded electrode layer of Magnetic Sensor as screen layer and electrode, the surface in contact when contacting with disk to reduce it amasss.Yet, when having reduced the width of guarded electrode layer, be used to shield magneto-resistance effect element and make its shield effectiveness of avoiding the influence of the magnetic flux that produces from disk that deterioration can take place.
Summary of the invention
Be a kind of Magnetic Sensor on the one hand, described Magnetic Sensor has the magnetoresistive element that comes acquired information based on the size of the magnetic flux that produces from medium.Described Magnetic Sensor comprises: by two electrode layers that magnetic material constitutes, described two electrode layers clip described magnetoresistive element, are used for applying electric current to described magnetoresistive element; At least one screen layer, described at least one screen layer is used to shield described magnetoresistive element so that it avoids the influence of described magnetic flux, be set to described electrode layer at least one surperficial relative towards described magnetoresistive element; And at least one insulation course, described at least one insulation course is used to make described magnetoresistive element and described screen layer heat insulation, between described at least one and the described screen layer in described electrode layer.
According to the present invention, reduced the described electrode layer width of (it also is used as screen layer), and being provided with the mode of insulation course therebetween, described screen layer is arranged on the opposite side towards the surface of described magneto-resistance effect element of above-mentioned electrode layer.Therefore, also less even when the air cushion surface that makes magnetic head and disk come in contact from the heat that electrode layer produces, and because the existence of insulation course, so the heat that produces from screen layer also is difficult for being transmitted to magneto-resistance effect element.In addition, except electrode layer, also be provided with screen layer, therefore can improve shield effectiveness.
Description of drawings
Fig. 1 is the stereographic map of disk set according to an embodiment of the invention;
Fig. 2 shows the synoptic diagram of the position relation between suspension, slide block and the magnetic head;
Fig. 3 is the cross-sectional view according to the magnetic head of embodiments of the invention 1;
Fig. 4 is the figure according to the magnetic head of embodiments of the invention 1 that watches from the recording medium side;
Fig. 5 shows the synoptic diagram of the structure of magneto-resistance effect element;
Fig. 6 shows the synoptic diagram of the structure of pinning layer (pinned layer);
Fig. 7 is the cross-sectional view according to the magnetic head of embodiments of the invention 2;
Fig. 8 is the figure according to the magnetic head of embodiments of the invention 2 that watches from the recording medium side;
Fig. 9 shows the cross-sectional view of magnetic head;
Figure 10 is the figure of the magnetic head from Fig. 9 that the recording medium side is watched;
Figure 11 is the cross-sectional view according to the magnetic head of modification of the present invention; And
Figure 12 is the figure according to the magnetic head of modification of the present invention that watches from the recording medium side.
Embodiment
With reference to the accompanying drawings embodiments of the invention are described hereinafter.
Embodiment 1:
Fig. 1 is the stereographic map of disk set.Disk 9 comprises magnetic information and by spindle motor 112 fast rotational.Transmission arm 114 is provided with the suspension of being made by stainless steel (suspension) 115.In addition, transmission arm 116 rotatably is fixed in housing 118 by axle 116, and transmission arm 116 moves along the radial direction of disk 9.Therefore, the slide block 119 that is installed to suspension 115 moves above disk 9, thereby carries out in orbit recording of information and reproduction.In housing 118, be fixed with the testing circuit device that is used to detect reproducing signal.The magneto-resistance effect element of this testing circuit device in the reading part of magnetic head provides the detection electric current, and measures the change in voltage of this magneto-resistance effect element, to reproduce the information from disk 9.
Fig. 2 shows the synoptic diagram of the position relation between disk 9, suspension 115, slide block 119 and the magnetic head 120.Thereby slide block 119 is installed to suspension 115 and is formed head suspension assembly.When disk 9 fast rotational, air is introduced between slide block 119 and the disk 9, makes slide block 119 suspend.The magnetic head 120 that is formed on slide block 119 front ends is electrically connected with the testing circuit device via being arranged on the insulated conductor on suspension 115 and the transmission arm 114.For the information of reading and recording on disk 9, use the magneto-resistance effect element of magnetic head 120.That is, slide block 119 receives the stray field from the track record of disk 9, and it can be flow in the magneto-resistance effect element.
Fig. 3 is the cross-sectional view along the magnetic head 120 of the direction intercepting vertical with the air cushion surface of magnetic head 120.In this magnetic head 120, following guarded electrode layer (it is used as screen layer and electrode) 6 and last guarded electrode layer (it is used as screen layer and electrode) 4 are formed on the (Al by AlTiC
2O
3On-the substrate 7 TiC) made, thereby on stack direction, clip magneto-resistance effect element 5.In addition, following screen layer 15 and upper shielding layer 14 are respectively formed at down the outside of guarded electrode layer 6 and last shielding electromagnetic layer 4.On upper shielding layer 14, be formed with the lower magnetic pole 2 of write head, also be formed with write coil 8 and last magnetic pole 1, thereby formed magnetic head 120.
Following screen layer 15, time guarded electrode layer 6, magneto-resistance effect element 5, last guarded electrode layer 4 and upper shielding layer 14 form reading parts.In addition, lower magnetic pole 2, coil 8 and last magnetic pole 1 form write section.Sequentially form following screen layer 15, following guarded electrode layer 6 by composition, go up guarded electrode layer 4, upper shielding layer 14 and lower magnetic pole 2, and so that aluminium oxide (Al to be set between them
2O
3) mode of the insulation course that waits carries out stacked to them.In addition, in Fig. 3, show the insulation course of special needs.
At first, describe reading part in detail with reference to Fig. 4 to 6.Fig. 4 shows the figure of the magnetic head of watching from the air cushion surface side 120.Reading part 20 has last guarded electrode layer 4, following guarded electrode layer 6 and at the magneto-resistance effect element 5 that is clipped on the thickness direction between them, and magneto-resistance effect element 5 receives stray field from disk to produce reproducing signal.In addition, reading part 20 also has upper shielding layer 14 and following screen layer 15, and upper shielding layer 14 and following screen layer 15 are arranged to from both sides to clip guarded electrode layer 4 and following guarded electrode layer 6 to be provided with the mode of insulation course 3 therebetween.Last guarded electrode layer 4, down guarded electrode layer 6, upper shielding layer 14 and down screen layer 15 form by NiFe.Insulation course 3 is by Al
2O
3 Form.Insulation course 3 has prevented the electrical short between screen layer and the guarded electrode layer respectively.The reason that insulation course 3 is set is: when screen layer when corresponding guarded electrode layer is short-circuited, can't offer magneto-resistance effect element 5 rightly with detecting electric current.In addition, compare, be used to form the Al of insulation course with the NiFe that is used to form screen layer and guarded electrode layer
2O
3Not too be easy to generate the heat that causes owing to contact.
Following guarded electrode layer 6 and last guarded electrode layer 4 are formed for improving the gap (gap) of reproduction.That is, except will being absorbed by guarded electrode layer 6 and last guarded electrode layer 4 down, thereby prevented from unnecessary magnetic flux is offered magneto-resistance effect element 5 from the unnecessary magnetic flux that disk 9 offers the magnetic flux of magneto-resistance effect element 5.In addition, following guarded electrode layer 6 and last guarded electrode layer 4 absorb the magnetic flux that passes magneto-resistance effect element 5.In addition, though do not specifically illustrate among the figure, current source is connected to down guarded electrode layer 6 and last guarded electrode layer 4, so that the detection electric current to be provided to magneto-resistance effect element.Voltage between the pair of terminal changes along with the variation of the impedance (resistance) of magneto-resistance effect element 5, therefore the magnetic information that is recorded on the disk 9 can be reproduced as voltage signal.With reference to Fig. 5 magneto-resistance effect element 5 is described below.
As shown in Figure 5, magneto-resistance effect element 5 of the present invention is tunnel-effect type magneto-resistance effect elements, and described magneto-resistance effect element 5 is by forming from following stacked in order inverse ferric magnetosphere 22, ferromagnetic pinning layer 23, insulation barrier 26 and the ferromagnetic free layer 24 of guarded electrode layer 6 side.Nail layer (pin layer) 22 is formed by the antiferromagnet such as Pt, Pd or Mn.Free layer 24 is the ferromagnetic layers that show soft magnetic property, and is for example formed by Fe, Co, Ni, CoFe, NiFe or CoZrNb.Have single layer structure though in the figure pinning layer 23 is depicted as, in fact pinning layer 23 can be formed and have the three-decker of making by CoFe, Ru and CoFe (as shown in Figure 6).Restraining barrier 26 is by Al
2O
3Form.In addition, be formed with vertically hard bias layer 25 in the both sides of magneto-resistance effect element 5.Vertically bias layer 25 has the magnetization (magnetization) along direction as shown respectively.Therefore, it is semifixed along direction as shown to be arranged on the magnetic quilt of the free layer 24 between vertical bias layer 25.Pinning layer 23 is magnetized along direction as shown by nail layer 22.In the tunnel-effect type magneto-resistance effect element, be provided with restraining barrier 26 usually.Change the direction of magnetization of free layer 24 from the stray field of disk 9, so changed the electric current of tunnel effect.In addition, the direction of magnetization of the direction of magnetization of pinning layer 23 and free layer 24 is orthogonal under the state of input signal not.
As mentioned above, in magneto-resistance effect element 5, its impedance changes along with the variation of stray field.Therefore, as mentioned above, the voltage between the pair of terminal changes along with the variation of the impedance of magneto-resistance effect element 5, so, the magnetic information that is recorded on the disk 9 can be reproduced as voltage signal.In addition, shown in the arrow among Fig. 3, be formed on down gap between guarded electrode layer 6 and the last guarded electrode layer 4 and be called as and read the gap.Along with the recording density increase of disk, be used to write down the narrowed width of a bit.Therefore, read the gap and also narrow down, and the unnecessary magnetic flux conductively-closed electrode layer except the magnetic flux that will offer magneto-resistance effect element 5 absorbs.
Following screen layer 15 and upper shielding layer 14 are respectively formed at down the outside of guarded electrode layer 6 and last guarded electrode layer 4, are provided with corresponding insulation layer 3 therebetween, thereby have formed reading part.Because except absorbing by screen layer 15 and upper shielding layer 14 down, so prevented from unnecessary magnetic flux is offered magneto-resistance effect element 5 from the unnecessary magnetic flux that disk offers the magnetic flux of magneto-resistance effect element 5.In addition, following screen layer 15 and upper shielding layer 14 absorb the magnetic flux that passes magneto-resistance effect element 5.As mentioned above, according to the present invention, because following screen layer 15 and upper shielding layer 14 are respectively formed at down the outside of guarded electrode layer 6 and last guarded electrode layer 4, so strengthened shield effectiveness.
Describe write section in detail with reference to Fig. 3 and 4.Write section comprises magnetic pole 1, coil 8 and lower magnetic pole 2.Around coil 8, be formed with insulation course, and formed on this insulation course constitute by soft magnetic material on magnetic pole 1.Coil 8 is arranged between magnetic pole 1 and the lower magnetic pole 2.Last magnetic pole 1 and lower magnetic pole 2 form the magnetic circuit around the coil 8.When electric current is offered coil 8, produce magnetic flux.Subsequently, this magnetic flux flows between lower magnetic pole 2 and last magnetic pole 1 and is provided to the outside.The direction of magnetization of disk 9 that has been provided to outside change of flux like this, thereby writing information.That is because the electric current that has carried out modulation according to information to be recorded can flow in coil 8, so according to this current-induced magnetic field, thereby can record the information on the disk 9.
The shape of individual components is described with reference to Fig. 4 subsequently.When air cushion surface is watched, the width of following screen layer 15 is 40 to 100 μ m, and the degree of depth is 20 to 40 μ m, and thickness is 1.0 to 2.0 μ m; And the width of upper shielding layer 14 is 40 to 100 μ m, and the degree of depth is 20 to 40 μ m, and thickness is 1.0 to 2.0 μ m.The width of last guarded electrode layer 4 and following guarded electrode layer 6 is less than the width of upper shielding layer 14 and following screen layer 15, and respectively in the scope of 10 to 20 μ m.The thickness of guarded electrode layer is less than the thickness of screen layer, and is 2.0 μ m or littler.In addition, the thickness of insulation course 3 is in the scope of 0.25 to 0.5 μ m.In addition, in Fig. 4, width is along the Z direction, and thickness is along directions X, and the degree of depth is along the Y direction.
Embodiment 2:
In embodiment 1, following structure has been described, wherein will descend guarded electrode layer 6 and last guarded electrode layer 4 to form and on thickness direction, clip magneto-resistance effect element 5; Yet, also can form other structure.
Fig. 7 is the cross-sectional view of this magnetic head 120 of the edge direction intercepting vertical with the air cushion surface of the magnetic head 120 of embodiment 2.In this magnetic head 120, following guarded electrode layer 6 and last guarded electrode layer 4 are formed on the (Al by AlTiC
2O
3On-the substrate 7 TiC) made, thereby on stack direction, clip magneto-resistance effect element 5.In addition, be formed with upper shielding layer 14 in last guarded electrode layer 4 outside.On upper shielding layer 14, be formed with the lower magnetic pole 2 of write head, also be formed with write coil 8 and last magnetic pole 1, thereby form magnetic head 120.
Following guarded electrode layer 6, magneto-resistance effect element 5, last guarded electrode layer 4 and upper shielding layer 14 form reading parts.In addition, lower magnetic pole 2, coil 8 and last magnetic pole 1 form write section.Sequentially form down guarded electrode layer 6, go up guarded electrode layer 4, upper shielding layer 14 and lower magnetic pole 2 by composition, and so that aluminium oxide (Al to be set between them
2O
3) mode of the insulation course that waits carries out stacked to them.In addition, in Fig. 7 and Fig. 8, show the insulation course of special needs.
At first, describe reading part in detail with reference to Fig. 7.Fig. 7 shows the figure of the magnetic head of watching from the air cushion surface side 120.Reading part 20 has last guarded electrode layer 4, following guarded electrode layer 6 and be clipped in therebetween magneto-resistance effect element 5 on thickness direction, and magneto-resistance effect element 5 receives stray field from disk to produce reproducing signal.In addition, reading part 20 also has the upper shielding layer 14 that is arranged in guarded electrode layer 4 outside, is provided with insulation course 3 between last guarded electrode layer 4 and upper shielding layer 14.As mentioned above, in the present invention, because also be formed with upper shielding layer 14, so strengthened shield effectiveness in last guarded electrode layer 4 outside.
The gap that following guarded electrode layer 6 and last guarded electrode layer 4 are formed for improving reproduction.That is, except will being absorbed by guarded electrode layer 6 and last guarded electrode layer 4 down, thereby prevented from unnecessary magnetic flux is offered magneto-resistance effect element 5 from the unnecessary magnetic flux that disk offers the magnetic flux of magneto-resistance effect element 5.In addition, following guarded electrode layer 6 and last guarded electrode layer 4 absorb the magnetic flux that passes magneto-resistance effect element 5.In addition, though do not specifically illustrate among the figure, current source is connected to down guarded electrode layer 6 and last guarded electrode layer 4, to provide the detection electric current to magneto-resistance effect element 5.Voltage between the pair of terminal changes along with the variation of the impedance of magneto-resistance effect element 5, therefore the magnetic information that is recorded on the disk 9 can be reproduced as voltage signal.Therefore the magneto-resistance effect element 5 of present embodiment omits the description to it with identical with reference to the described magneto-resistance effect element of Fig. 55.
Because write section is identical with the write section of describing in embodiment 1, so omission is to its description.
The shape of individual components is described with reference to Fig. 8 subsequently.When air cushion surface is watched, the width of following guarded electrode layer 6 is 40 to 100 μ m, and the degree of depth is 20 to 40 μ m, and thickness is 1.0 to 2.0 μ m; And the width of upper shielding layer 14 is 40 to 100 μ m, and the degree of depth is 20 to 40 μ m, and thickness is 1.0 to 2.0 μ m.The width of last guarded electrode layer 4 is less than the width of upper shielding layer 14, and in the scope of 10 to 20 μ m.The thickness of last guarded electrode layer 4 is less than the thickness of screen layer, and is 2.0 μ m or littler.In addition, the thickness of insulation course 3 is in the scope of 0.25 to 0.5 μ m.In addition, in Fig. 8, width is along the Z direction, and thickness is along directions X, and the degree of depth is along the Y direction.
At last, advantage of the present invention will be described.For example advantage according to magnetic head of the present invention is described with reference to the magnetic head shown in Fig. 9 and 10.Fig. 9 is the cross-sectional view along this magnetic head of the direction intercepting vertical with the air cushion surface of magnetic head, and Figure 10 is the figure of the magnetic head watched from the air cushion surface side.In Fig. 9 and 10, width is along the Z direction, and thickness is along directions X, and the degree of depth is along the Y direction.
In the magnetic head shown in Fig. 9 and 10 120, following guarded electrode layer 6 and last guarded electrode layer 4 are formed on the (Al by AlTiC
2O
3On-the substrate 7 TiC) made, thereby on stack direction, clip magneto-resistance effect element 5.In addition, on last guarded electrode layer 4, be formed with the lower magnetic pole 2 of write head, and be formed with write coil 8 and last magnetic pole 1, thereby form magnetic head 120.Sequentially form down guarded electrode layer 6, go up guarded electrode layer 4 and lower magnetic pole 2 by composition, and so that aluminium oxide (Al to be set between them
2O
3) mode of the insulation course that waits carries out stacked to them.
Shown in Fig. 3 and 9, in some cases, the air cushion surface of magnetic head may contact with disk.Owing to contacting the damage that the heat that produces can cause magneto-resistance effect element 5.In the case, the damage of element refers to following situation: because nail layer 22, pinning layer 23, restraining barrier 26 and free layer 24 are mixed by heat melts, perhaps because the coupling between nail layer 22 and the pinning layer 23 is destroyed by heat, institute is so that direction of magnetization is unfixing.
In magnetic head shown in Figure 9, clip the width of the width of the last guarded electrode layer 4 of magneto-resistance effect element 5 and following guarded electrode layer 6 greater than last guarded electrode layer shown in Figure 34 and following guarded electrode layer 6, in addition, the thickness of the guarded electrode layer among Fig. 9 is also greater than the thickness of guarded electrode layer shown in Figure 3.Therefore, increase the area that air cushion surface contacts with disk 9, also increased the heat that produces thus.So, increased the heat that is applied to magneto-resistance effect element 5 unfriendly.On the other hand, in magnetic head according to the present invention, the width of guarded electrode layer that clips magneto-resistance effect element 5 is little, and its thickness is also little.Therefore, reduce the area that air cushion surface contacts with disk 9, also reduced the heat that produces thus.So, also reduced the heat that is applied to magneto-resistance effect element 5.In addition, because in the guarded electrode layer outside with and the mode that is provided with insulation course 3 between it be provided with screen layer, even so when screen layer contacts with disk 9, because heat need conduct by insulation course 3, so not too easily heat is applied to magneto-resistance effect element 5.In addition, because insulation course 3 by Al
2O
3Make,, produce heat owing to contacting not too easily with disk 9 so compare with screen layer with the guarded electrode layer of making by NiFe.
As mentioned above, in the present invention, because the outside of at least one in last guarded electrode layer 4 and following guarded electrode layer 6 forms screen layer, so formed structure with strong shield effectiveness.In addition, compare, form the Al of insulation course with the NiFe that forms screen layer and guarded electrode layer
2O
3Not conference produces heat owing to contacting with disk, so heat is passed through Al not too easily
2O
3Conduct.Therefore, even when the air cushion surface of magnetic head contacts with disk, also produce heat from insulation course not too easily, even and the upper shielding layer 14 and the following screen layer 15 that are arranged on the outside contact and produce with disk when hot, consequent heat also is transmitted to guarded electrode layer 4 and following guarded electrode layer 6 not too easily owing to the existence of insulation course 3.Therefore, reduced the heat that is transmitted to magneto-resistance effect element, so this element is not fragile.
To describe above embodiment in detail in order helping to understand the present invention, but to the invention is not restricted to this.Therefore, under the situation that does not break away from the spirit and scope of the present invention, can make amendment to the present invention.For example, in embodiment 2, formed the structure that only is formed with screen layer in the outside of last guarded electrode layer 4; Yet, also can form the structure that only is formed with screen layer in the outside of following guarded electrode layer 6.In addition, for example, shown in Figure 11 and 12, in the outside that is arranged in the screen layer on the insulation course, can be further with and be provided with the mode arranging shielding layer of insulation course between it.
Claims (8)
1. Magnetic Sensor, described Magnetic Sensor have the magnetoresistive element that comes acquired information based on the size of the magnetic flux that produces from medium, and described Magnetic Sensor comprises:
By two electrode layers that magnetic material constitutes, described two electrode layers clip described magnetoresistive element, are used for applying electric current to described magnetoresistive element;
At least one screen layer, described at least one screen layer is used to shield described magnetoresistive element so that it avoids the influence of described magnetic flux, be disposed in described electrode layer at least one opposite side towards the surface of described magnetoresistive element; And
At least one insulation course, described at least one insulation course are used to make described magnetoresistive element and described screen layer heat insulation, between described at least one and the described screen layer in described electrode layer.
2. Magnetic Sensor according to claim 1, wherein, described screen layer is disposed in the opposite side towards the surface of described magnetoresistive element with described electrode layer, and
Described insulation course is between described electrode layer and described screen layer.
3. Magnetic Sensor according to claim 1, wherein, in the described electrode layer described at least one between described at least one screen layer and described magnetoresistive element, described at least one the width in the described electrode layer is less than the width of described screen layer.
4. Magnetic Sensor according to claim 1, wherein, in the described electrode layer described at least one between described at least one screen layer and described magnetoresistive element, described at least one the thickness in the described electrode layer is less than the thickness of described screen layer.
5. memory storage, described memory storage comprises:
Medium, it is used for canned data; With
Magnetic head, it has sensor, and described sensor is used for obtaining described information based on the size of the magnetic flux that produces from described medium, and described sensor has:
By two electrode layers that magnetic material constitutes, described two electrode layers clip magnetoresistive element,
Be used for applying electric current to described magnetoresistive element;
At least one screen layer, described at least one screen layer is used to shield described magnetoresistive element
So that it avoids the influence of magnetic flux, be disposed in described electrode layer at least one
Opposite side towards the surface of described magnetoresistive element; And
At least one insulation course, described at least one insulation course be used to make described magnetoresistive element with
Described screen layer heat insulation is between described at least one and the described screen layer in described electrode layer.
6. memory storage according to claim 5, wherein, the gap between the described electrode layer is less than the width of the unit that is used for recorded information of described medium.
7. memory storage according to claim 5, wherein, in the described electrode layer described at least one between described at least one screen layer and described magnetoresistive element, described at least one the width in the described electrode layer is less than the width of described screen layer.
8. memory storage according to claim 5, wherein, in the described electrode layer described at least one between described at least one screen layer and described magnetoresistive element, described at least one the thickness in the described electrode layer is less than the thickness of described screen layer.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006205987 | 2006-07-28 | ||
| JP2006205987 | 2006-07-28 | ||
| JP2007014328 | 2007-01-24 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101114456A true CN101114456A (en) | 2008-01-30 |
Family
ID=39022759
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2007100964986A Pending CN101114456A (en) | 2006-07-28 | 2007-04-19 | Magnetic sensor and magnetic disk apparatus |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114783466A (en) * | 2018-11-22 | 2022-07-22 | 新科实业有限公司 | Transition curvature improved system for heat assisted magnetic recording |
-
2007
- 2007-04-19 CN CNA2007100964986A patent/CN101114456A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114783466A (en) * | 2018-11-22 | 2022-07-22 | 新科实业有限公司 | Transition curvature improved system for heat assisted magnetic recording |
| CN114783466B (en) * | 2018-11-22 | 2023-10-20 | 新科实业有限公司 | System for transition curvature improvement for thermally assisted magnetic recording |
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