CN101108773A - NTC heat-sensitive semiconductive ceramic capable of low-temperature melting and method of manufacturing the same - Google Patents
NTC heat-sensitive semiconductive ceramic capable of low-temperature melting and method of manufacturing the same Download PDFInfo
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- CN101108773A CN101108773A CNA2006100431826A CN200610043182A CN101108773A CN 101108773 A CN101108773 A CN 101108773A CN A2006100431826 A CNA2006100431826 A CN A2006100431826A CN 200610043182 A CN200610043182 A CN 200610043182A CN 101108773 A CN101108773 A CN 101108773A
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Abstract
An NTC heat sensitive semiconductive ceramics capable of sintering at low temperature and the preparation method are provided. The ceramics can realize densification sintering at 950 DEG C.. The invention uses manganese nitrate, cobalt nitrate, nickel nitrate, citric acid, ethylene glycol and ammonia as raw materials and adopts the sol-gel self-propagating process to synthesize the Mn hyphen Co hyphen Ni hyphen O nano powder, and uses the powder as the initial material and is added with dibismuth trioxide to prepare the practical NTC heat sensitive semiconductive ceramics through ball mill mixing, drying, granulation, molding, rubber removal, sintering and silver firing. The invention is characterized in that: the invention realizes that the Mn hyphen Co hyphen Ni hyphen O-based heat sensitive semiconductive ceramics sinters by densification at 950 DEG C., which lays down a technical foundation for preparing multilayer chip NTC thermistance, speeds up the chip step of the NTC thermistance in our country and has important theoretical significance and engineering application value.
Description
(1) technical field
The present invention relates to the heat-sensitive semiconductive ceramic field of material subject, is a kind of low temperature sintering NTC heat-sensitive semiconductive ceramic and preparation method thereof.
(2) background technology
The NTC heat-sensitive semiconductive ceramic is to have the hi tech and new material that important competition is worth, and is widely used at high-technology fields such as temperature survey, temperature control, temperature compensations.The sintering temperature of Mn-Co-Ni-O series semiconductor pottery is at 1200 ℃～1250 ℃, the use temperature of thermistor is-100 ℃～200 ℃, has higher material constant B (2000K～7000K), room temperature resistivity can be controlled at 100～10M Ω cm, therefore, this material is to be used to prepare the of paramount importance base mateiral of NTC heat-sensitive semiconductive ceramic.
The development of mobile communication technology and digitrend have proposed the requirement of automatization in miniaturization, lightness and the production process to electronics, the exploitation of electronic component and produce must be to miniaturization, chip type and braid development.Along with the developing rapidly and popularizing of surface installation technique (SMT), the occupation rate of surface mount device (SMC) in electronics steadily improves.1997, world developed country components and parts chip type rate reached more than 70%, and the whole world is average more than 40%.2003, chip components and parts market, the whole world reached 9,000 hundred million approximately, and the chip type rate reaches more than 80%.The trend of electronic devices and components chip type also expands to sensor field, and the chip type thermistor is complied with this trend, obtains great development in the nineties.At present, the tempo of chip type thermistor is considerably beyond traditional discrete thermistor, and since nineteen ninety, the ratio of Japanese chip type thermistor is to be higher than 20% speed increase every year.Chip NTC thermistor mainly contains individual layer chip and two kinds of structure formations of multilayer sheet type.Multilayer sheet type NTC thermistor possesses following outstanding performance: (1) can satisfy the needs of miniaturization of components and surface mounting technology, and (2) can realize NTC thermistor optimization in Properties (as low resistance, high B value) by the multilayer package technique.(3), can realize the gradient distribution and the multifunction of material design by means of the application of material compounding technology.
Realize a few of hotspots of thermistor, at first will realize the common burning of NTC thermistor ceramic material and interior electrode.Mn-Co-Ni-O be the sintering temperature of NTC heat-sensitive semiconductive ceramic up to 1200～1250 ℃, can only use electrode in the Ag-Pd, the cost costliness.Reduce the electrode cost, use relatively inexpensive Ag electrode, reducing below the material sintering temperature to 950 ℃ is the guardian technique link.The low-temperature sintering technology of Mn-Co-Ni-O based material becomes the key of restriction China development multilayer sheet type NTC thermistor.Therefore, explore different technological approaches and reduce ceramic sintering temperature, develop low temperature co-fired knot technology,, have important significance for theories and engineering using value accelerating China NTC thermistor chip paces.
(3) summary of the invention
For realizing that Mn-Co-Ni-O is the low-temperature sintering of thermistor, the present invention proposes collosol and gel is nano-powder from the synthetic Mn-Co-Ni-O of the method that spreads, and the solubility promoter that mixes in this nano-powder reaches the purpose that reduces sintering temperature.
The present invention is a raw material with manganous nitrate, Xiao Suangu, nickelous nitrate, citric acid, ethylene glycol, ammoniacal liquor, and the amount ratio of each raw material is (mol/mol): Xiao Suangu: nickelous nitrate: manganous nitrate: citric acid: ethylene glycol=0.2: 1: 1.8: 3.6: 12.Taking collosol and gel is powder from the synthetic MnCoNiO of the method that spreads.
Adopt bismuthous oxide bismuth trioxide as the low-temperature sintering auxiliary agent in the present invention.Is the bismuthous oxide bismuth trioxide that adds 0.25～2.0 weight % in the powder at collosol and gel from the synthetic Mn-Co-Ni-O of the method that spreads, ball milling mixes the PVA tackiness agent that the back adds 2～8 weight %, can obtain low sintering NTC heat-sensitive semiconductive ceramic after technologies such as granulation, compressing tablet, binder removal, sintering, detailed process is as follows:
The first step: collosol and gel is from spreading prepared Mn-Co-Ni-O powder
(1) with after analytical pure manganous nitrate, Xiao Suangu, the nickelous nitrate dissolving mixing, adds the analytical pure citric acid;
(2) dropping ammonia, the pH value of regulating colloidal sol;
(3) add ethylene glycol;
(4) above-mentioned colloidal sol is at 80 ℃ of heating in water bath, and constantly stirs, and obtains wet gel;
(5) wet gel obtains xerogel 110～130 ℃ of baking oven for heating;
(6) xerogel is lighted in air, obtains black powder after the burning;
(7) above-mentioned black powder was 600 ℃ of calcinings 2 hours, and obtaining Mn-Co-Ni-O is nano-powder;
Second step: preparation Mn-Co-Ni-O base NTC heat-sensitive semiconductive ceramic
(1) adding bismuthous oxide bismuth trioxide in above-mentioned Mn-Co-Ni-O powder, is medium with the dehydrated alcohol, ball milling 24 hours;
(2) in above-mentioned powder, add the polyoxyethylene glycol aqueous solution, grind granulation;
(3) granulation pressed by powder being become diameter is 12 millimeters circular base substrate, and forming pressure is 200～1000MPa, and the dwell time is 30 seconds;
(4) with the green compact body at 560 ℃ of binder removals;
(5) after the base substrate process binder removal technology, sintering in box-type furnace, sintering temperature is 950 ℃;
(6) after sintered ceramic had polished, the silver coating slurry can be tested ceramic electrical property behind the silver ink firing.
Major advantage of the present invention is that Mn-Co-Ni-O base heat-sensitive semiconductive ceramic finishes densification sintering below 950 ℃, for preparation multilayer sheet type NTC thermistor has been established technical foundation.
(4) embodiment
Embodiment one:
In the present embodiment, with analytical pure manganous nitrate, Xiao Suangu, nickelous nitrate, citric acid, ethylene glycol, ammoniacal liquor is raw material, and the amount ratio (mol/mol) of each raw material is: Xiao Suangu: nickelous nitrate: manganous nitrate: citric acid: ethylene glycol=0.2: 1: 1.8: 3.6: 12.Taking collosol and gel is powder from the synthetic Mn-Co-Ni-O of the method that spreads.
Adopt bismuthous oxide bismuth trioxide as the low-temperature sintering auxiliary agent.Is the bismuthous oxide bismuth trioxide that mixes 0.25 weight % in the powder at collosol and gel from the synthetic MnCoNiO of the method that spreads, ball milling mixes the PVA tackiness agent that the back adds 2 weight %, can obtain realizing low sintering NTC heat-sensitive semiconductive ceramic after technologies such as granulation, compressing tablet, binder removal, sintering, detailed process is as follows:
The first step: collosol and gel is from spreading prepared Mn-Co-Ni-O powder
(1) with after manganous nitrate, Xiao Suangu, the nickelous nitrate dissolving mixing, adds citric acid.The mol ratio of above-mentioned raw materials is: 1.8: 0.2: 1: 3.6;
(2) dropping ammonia, the pH=3 of adjusting colloidal sol;
(3) add ethylene glycol, the mol ratio of ethylene glycol and citric acid is 12: 3.6;
(4) above-mentioned colloidal sol in 80 ℃ of heating in water bath 5 hours, obtains wet gel under constantly stirring;
(5) wet gel obtains xerogel 110～130 ℃ of baking oven for heating.
(6) xerogel is ground the dispersion back and in air, lights, obtain black powder after the burning,
(7) above-mentioned black powder obtains the Mn-Co-Ni-O nano-powder 600 ℃ of calcinings 2 hours, and powder granularity is 40 nanometers;
Second step: preparation Mn-Co-Ni-O base NTC heat-sensitive semiconductive ceramic
(1) adding 0.25 weight % bismuthous oxide bismuth trioxide in above-mentioned Mn-Co-Ni-O powder, is medium with the dehydrated alcohol, ball milling 24 hours, and slurry is 80 ℃ of oven for drying;
(2) add the polyoxyethylene glycol aqueous solution in above-mentioned powder, the content of polyoxyethylene glycol in powder is 2 weight %, grinds granulation;
(3) granulation pressed by powder being become diameter is 12 millimeters circular base substrate, and forming pressure is 1000MPa, and the dwell time is 30 seconds;
(4) with the dirt base substrate at 560 ℃ of binder removals, 7 hours heating-up times, soaking time 1 hour;
(5) base substrate is through after the binder removal technology, sintering in box-type furnace, under the air ambient, and sintering temperature is 950 ℃, 5 ℃/minute of heat-up rates, soaking time 2 hours, in cooling rate: the 950-850 ℃ interval 2 ℃/minute; Stove is cold in the 850 ℃-room temperature interval;
(6) after sintered ceramic had polished, the silver coating slurry can be tested ceramic electrical property behind 560 ℃ of silver ink firings;
(7) electrical property of sample is as follows: B=3300K, ρ
25=25K Ω cm
Embodiment two:
In the present embodiment, with analytical pure manganous nitrate, Xiao Suangu, nickelous nitrate, citric acid, ethylene glycol, ammoniacal liquor is raw material, and the amount ratio (mol/mol) of each raw material is: Xiao Suangu: nickelous nitrate: manganous nitrate: citric acid: ethylene glycol=0.2: 1: 1.8: 3.6: 12.Taking collosol and gel is powder from the synthetic Mn-Co-Ni-O of the method that spreads.
Adopt bismuthous oxide bismuth trioxide as the low-temperature sintering auxiliary agent.Is the bismuthous oxide bismuth trioxide that mixes 0.5 weight % in the powder at collosol and gel from the synthetic MnCoNiO of the method that spreads, ball milling mixes the PVA tackiness agent that the back adds 5 weight %, can obtain realizing low sintering NTC heat-sensitive semiconductive ceramic after technologies such as granulation, compressing tablet, binder removal, sintering, detailed process is as follows:
The first step: collosol and gel is from spreading prepared Mn-Co-Ni-O powder
(1) with after manganous nitrate, Xiao Suangu, the nickelous nitrate dissolving mixing, adds citric acid.The mol ratio of above-mentioned raw materials is: 1,8: 0.2: 1: 3.6;
(2) dropping ammonia, the pH=3 of adjusting colloidal sol;
(3) add ethylene glycol, the mol ratio of ethylene glycol and citric acid is 12: 3.6;
(4) above-mentioned colloidal sol in 80 ℃ of heating in water bath 5 hours, obtains wet gel under constantly stirring;
(5) wet gel obtains xerogel 110～130 ℃ of baking oven for heating.
(6) xerogel is ground the dispersion back and in air, lights, obtain black powder after the burning,
(7) above-mentioned black powder obtains the Mn-Co-Ni-O nano-powder 800 ℃ of calcinings 2 hours, and powder granularity is 40 nanometers;
Second step: preparation Mn-Co-Ni-O base NTC heat-sensitive semiconductive ceramic
(1) adding 0.5 weight % bismuthous oxide bismuth trioxide in above-mentioned Mn-Co-Ni-O powder, is medium with the dehydrated alcohol, ball milling 24 hours, and slurry is 80 ℃ of oven for drying;
(2) add the polyoxyethylene glycol aqueous solution in above-mentioned powder, the content of polyoxyethylene glycol in powder is 5 weight %, grinds granulation;
(3) granulation pressed by powder being become diameter is 12 millimeters circular base substrate, and forming pressure is 200MPa, and the dwell time is 30 seconds;
(4) with the green compact body at 560 ℃ of binder removals, 7 hours heating-up times, soaking time 1 hour;
(5) base substrate is through after the binder removal technology, sintering in box-type furnace, under the air ambient, and sintering temperature is 950 ℃, 5 ℃/minute of heat-up rates, soaking time 2 hours, in cooling rate: the 950-850 ℃ interval 2 ℃/minute; Stove is cold in the 850 ℃-room temperature interval;
(6) after sintered ceramic had polished, the silver coating slurry can be tested ceramic electrical property behind 560 ℃ of silver ink firings;
(7) electrical property of sample is as follows: B=3200K, ρ
25=10K Ω cm
Embodiment three:
In the present embodiment, with analytical pure manganous nitrate, Xiao Suangu, nickelous nitrate, citric acid, ethylene glycol, ammoniacal liquor is raw material, and the amount ratio (mol/mol) of each raw material is: Xiao Suangu: nickelous nitrate: manganous nitrate: citric acid: ethylene glycol=0.2: 1: 1.8: 3.6: 12.Taking collosol and gel is powder from the synthetic Mn-Co-Ni-O of the method that spreads.
Adopt bismuthous oxide bismuth trioxide as the low-temperature sintering auxiliary agent.Is the bismuthous oxide bismuth trioxide that mixes 1.0 weight % in the powder at collosol and gel from the synthetic MnCoNiO of the method that spreads, ball milling mixes the PVA tackiness agent that the back adds 6 weight %, can obtain realizing low sintering NTC heat-sensitive semiconductive ceramic after technologies such as granulation, compressing tablet, binder removal, sintering, detailed process is as follows:
The first step: collosol and gel is from spreading prepared Mn-Co-Ni-O powder
(1) with after manganous nitrate, Xiao Suangu, the nickelous nitrate dissolving mixing, adds citric acid.The mol ratio of above-mentioned raw materials is: 1.8: 0.2: 1: 3.6;
(2) dropping ammonia, the pH=3 of adjusting colloidal sol;
(3) add ethylene glycol, the mol ratio of ethylene glycol and citric acid is 12: 3.6;
(4) above-mentioned colloidal sol in 80 ℃ of heating in water bath 5 hours, obtains wet gel under constantly stirring;
(5) wet gel obtains xerogel 110～130 ℃ of baking oven for heating.
(6) xerogel is ground the dispersion back and in air, lights, obtain black powder after the burning,
(7) above-mentioned black powder obtains the Mn-Co-Ni-O nano-powder 600 ℃ of calcinings 2 hours, and powder granularity is 40 nanometers;
Second step: preparation Mn-Co-Ni-O base NTC heat-sensitive semiconductive ceramic
(1) adding 1.0 weight % bismuthous oxide bismuth trioxides in above-mentioned Mn-Co-Ni-O powder, is medium with the dehydrated alcohol, ball milling 24 hours, and slurry is 80 ℃ of oven for drying;
(2) add the polyoxyethylene glycol aqueous solution in above-mentioned powder, the content of polyoxyethylene glycol in powder is 6 weight %, grinds granulation;
(3) granulation pressed by powder being become diameter is 12 millimeters circular base substrate, and forming pressure is 400MPa, and the dwell time is 30 seconds;
(4) with the green compact body at 560 ℃ of binder removals, 7 hours heating-up times, soaking time 1 hour;
(5) base substrate is through after the binder removal technology, sintering in box-type furnace, under the air ambient, and sintering temperature is 950 ℃, 5 ℃/minute of heat-up rates, soaking time 2 hours, cooling rate are 2 ℃/minute in 950-850 ℃ of interval, are that stove is cold in 850 ℃-room temperature interval;
(6) after sintered ceramic had polished, the silver coating slurry can be tested ceramic electrical property behind 560 ℃ of silver ink firings;
(7) electrical property of sample is as follows: B=3200K, ρ
25=5.8K Ω cm
Embodiment four:
In the present embodiment, with analytical pure manganous nitrate, Xiao Suangu, nickelous nitrate, citric acid, ethylene glycol, ammoniacal liquor is raw material, and the amount ratio (mol/mol) of each raw material is: Xiao Suangu: nickelous nitrate: manganous nitrate: citric acid: ethylene glycol=0.2: 1: 1.8: 3.6: 12.Taking collosol and gel is powder from the synthetic Mn-Co-Ni-O of the method that spreads.
Adopt bismuthous oxide bismuth trioxide as the low-temperature sintering auxiliary agent.Is the bismuthous oxide bismuth trioxide that mixes 1.5 weight % in the powder at collosol and gel from the synthetic MnCoNiO of the method that spreads, ball milling mixes the PVA tackiness agent that the back adds 2 weight %, can obtain realizing low sintering NTC heat-sensitive semiconductive ceramic after technologies such as granulation, compressing tablet, binder removal, sintering, detailed process is as follows:
The first step: collosol and gel is from spreading prepared Mn-Co-Ni-O powder
(1) with after manganous nitrate, Xiao Suangu, the nickelous nitrate dissolving mixing, adds citric acid.The mol ratio of above-mentioned raw materials is: 1.8: 0.2: 1: 3.6;
(2) dropping ammonia, the pH=3 of adjusting colloidal sol;
(3) add ethylene glycol, the mol ratio of ethylene glycol and citric acid is 12: 3.6;
(4) above-mentioned colloidal sol in 80 ℃ of heating in water bath 5 hours, obtains wet gel under constantly stirring;
(5) wet gel obtains xerogel 110～130 ℃ of baking oven for heating.
(6) xerogel is ground the dispersion back and in air, lights, obtain black powder after the burning,
(7) above-mentioned black powder obtains the Mn-Co-Ni-O nano-powder 800 ℃ of calcinings 2 hours, and powder granularity is 40 nanometers;
Second step: preparation Mn-Co-Ni-O base NTC heat-sensitive semiconductive ceramic
(1) adding 1.5 weight % bismuthous oxide bismuth trioxides in above-mentioned Mn-Co-Ni-O powder, is medium with the dehydrated alcohol, ball milling 24 hours, and slurry is 80 ℃ of oven for drying;
(2) add the polyoxyethylene glycol aqueous solution in above-mentioned powder, the content of polyoxyethylene glycol in powder is 2 weight %, grinds granulation;
(3) granulation pressed by powder being become diameter is 12 millimeters circular base substrate, and forming pressure is 800MPa, and the dwell time is 30 seconds;
(4) with the green compact body at 560 ℃ of binder removals, 7 hours heating-up times, soaking time 1 hour;
(5) base substrate is through after the binder removal technology, sintering in box-type furnace, under the air ambient, and sintering temperature is 950 ℃, 5 ℃/minute of heat-up rates, soaking time 2 hours, in cooling rate: the 950-850 ℃ interval 2 ℃/minute; Stove is cold in the 850 ℃-room temperature interval;
(6) after sintered ceramic had polished, the silver coating slurry can be tested ceramic electrical property behind 560 ℃ of silver ink firings;
(7) electrical property of sample is as follows: B=3300K, ρ
25=4.8K Ω cm
Embodiment five:
In the present embodiment, with analytical pure manganous nitrate, Xiao Suangu, nickelous nitrate, citric acid, ethylene glycol, ammoniacal liquor is raw material, and the amount ratio (mol/mol) of each raw material is: Xiao Suangu: nickelous nitrate: manganous nitrate: citric acid: ethylene glycol=0.2: 1: 1.8: 3.6: 12.Taking collosol and gel is powder from the synthetic Mn-Co-Ni-O of the method that spreads.
Adopt bismuthous oxide bismuth trioxide as the low-temperature sintering auxiliary agent.Is the bismuthous oxide bismuth trioxide that mixes 2.0 weight % in the powder at collosol and gel from the synthetic MnCoNiO of the method that spreads, ball milling mixes the PVA tackiness agent that the back adds 8 weight %, can obtain realizing low sintering NTC heat-sensitive semiconductive ceramic after technologies such as granulation, compressing tablet, binder removal, sintering, detailed process is as follows:
The first step: collosol and gel is from spreading prepared Mn-Co-Ni-O powder
(1) with after manganous nitrate, Xiao Suangu, the nickelous nitrate dissolving mixing, adds citric acid.The mol ratio of above-mentioned raw materials is: 1.8: 0.2: 1: 3.6;
(2) dropping ammonia, the pH=3 of adjusting colloidal sol;
(3) add ethylene glycol, the mol ratio of ethylene glycol and citric acid is 12: 3.6;
(4) above-mentioned colloidal sol in 80 ℃ of heating in water bath 5 hours, obtains wet gel under constantly stirring;
(5) wet gel obtains xerogel 110～130 ℃ of baking oven for heating.
(6) xerogel is ground the dispersion back and in air, lights, obtain black powder after the burning,
(7) above-mentioned black powder obtains the Mn-Co-Ni-O nano-powder 600 ℃ of calcinings 2 hours, and powder granularity is 40 nanometers;
Second step: preparation Mn-Co-Ni-O base NTC heat-sensitive semiconductive ceramic
(1) adding 2.0 weight % bismuthous oxide bismuth trioxides in above-mentioned Mn-Co-Ni-O powder, is medium with the dehydrated alcohol, ball milling 24 hours, and slurry is 80 ℃ of oven for drying;
(2) add the polyoxyethylene glycol aqueous solution in above-mentioned powder, the content of polyoxyethylene glycol in powder is 5 weight %, grinds granulation;
(3) granulation pressed by powder being become diameter is 12 millimeters circular base substrate, and forming pressure is 600MPa, and the dwell time is 30 seconds;
(4) with the green compact body at 560 ℃ of binder removals, 7 hours heating-up times, soaking time 1 hour;
(5) base substrate is through after the binder removal technology, sintering in box-type furnace, under the air ambient, and sintering temperature is 950 ℃, 5 ℃/minute of heat-up rates, soaking time 2 hours, in cooling rate: the 950-850 ℃ interval 2 ℃/minute; Stove is cold in the 850 ℃-room temperature interval;
(6) after sintered ceramic had polished, the silver coating slurry can be tested ceramic electrical property behind 560 ℃ of silver ink firings;
(7) electrical property of sample is as follows: B=3200K, ρ
25=15K Ω cm
Claims (2)
1. low temperature sintering NTC heat-sensitive semiconductive ceramic is characterized in that:
A. be 0.2: 1: 1.8 with mol ratio: 3.6: 12 manganous nitrate, Xiao Suangu, nickelous nitrate, citric acid, ethylene glycol, ammoniacal liquor synthesize nanometer Mn-Co-Ni-O powder with collosol and gel from spreading method, and are starting raw material with this powder;
B. in above-mentioned powder, add 0.25～2.0 weight % bismuthous oxide bismuth trioxide.
2. one kind prepares the preparation method of low temperature sintering NTC heat-sensitive semiconductive ceramic according to claim 1, raw material is prepared burden according to a certain ratio, and pass through ball milling, oven dry, grinding, binder removal and be coated with silver-colored operation, it is characterized in that adopting collosol and gel to go out the Mn-Co-Ni-O powder earlier from spreading prepared, add the bismuthous oxide bismuth trioxide of 0.25～2.0 weight % again in the Mn-Co-Ni-O powder, concrete steps are as follows:
The first step: collosol and gel is from spreading prepared Mn-Co-Ni-O powder
A. after analytical pure manganous nitrate, Xiao Suangu, nickelous nitrate dissolving being mixed, add the analytical pure citric acid;
B. dropping ammonia, the pH value of regulating colloidal sol is 3, adding ethylene glycol;
C. with colloidal sol at 80 ℃ of heating in water bath, and constantly stir, obtain wet gel;
D.110～130 ℃ oven dry, also burning obtain powder;
E. powder was calcined 2 hours at 600 ℃, obtaining Mn-Co-Ni-O is nano-powder;
Second step: preparation Mn-Co-Ni-O base NTC heat-sensitive semiconductive ceramic
A. in the Mn-Co-Ni-O powder, add bismuthous oxide bismuth trioxide, and ball milling;
B. in powder, add the polyoxyethylene glycol aqueous solution, grind granulation;
C. pressed by powder is become base substrate, forming pressure is 200～1000MPa, and the dwell time is 30 seconds;
D. with the green compact body at 560 ℃ of binder removals;
E. blank sintering, sintering temperature is 950 ℃;
F. sintered ceramic polishing, silver coating slurry, the electrical property of test pottery.
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| CN102503376A (en) * | 2011-11-10 | 2012-06-20 | 中国科学院上海技术物理研究所 | Preparation method of manganese cobalt nickel thermosensitive ceramic material |
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| CN107607216A (en) * | 2017-09-25 | 2018-01-19 | 南京航伽电子科技有限公司 | A kind of temperature transmitter with good compensation performance |
| CN108863350A (en) * | 2018-08-03 | 2018-11-23 | 中国科学院新疆理化技术研究所 | A kind of bismuth titanates based perovskite phase thermal sensitive ceramics composite material and preparation method and purposes |
| CN110156478A (en) * | 2019-06-06 | 2019-08-23 | 宁波科联电子有限公司 | A kind of low-temperature sintering oxide temperature-sensitive element, manufacturing device and its manufacturing method |
| CN110372336A (en) * | 2019-08-19 | 2019-10-25 | 陈龙 | A kind of CoNiO2The co-precipitation method of thermistor powder |
| CN111320469A (en) * | 2020-02-24 | 2020-06-23 | 广州新莱福磁电有限公司 | Manufacturing method of NTC thermistor material |
| CN113582668A (en) * | 2021-08-24 | 2021-11-02 | 中科传感(佛山)科技有限公司 | Full-printing preparation method of manganese nickel cobalt-based high-temperature-resistant flexible thermosensitive device |
| CN116741480A (en) * | 2023-06-05 | 2023-09-12 | 肇庆市金龙宝电子有限公司 | NTC thermistor based on gold electrode sintering and preparation method thereof |
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