CN101093911A - Antenna device having high reception sensitivity over wide band - Google Patents
Antenna device having high reception sensitivity over wide band Download PDFInfo
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- CN101093911A CN101093911A CN 200710110151 CN200710110151A CN101093911A CN 101093911 A CN101093911 A CN 101093911A CN 200710110151 CN200710110151 CN 200710110151 CN 200710110151 A CN200710110151 A CN 200710110151A CN 101093911 A CN101093911 A CN 101093911A
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Abstract
An antenna device is configured such that a chip antenna is mounted on a circuit substrate including first and second transmission lines, a high-frequency changeover switch, and a bias circuit. First ends of first and second radiation conductors that are wound around a base member of the chip antenna are connected to each other, and variable-capacitance elements are distributed in each of the radiation conductors. When an electrical connection between the input terminal and the output terminal of the high-frequency changeover switch is established, a feeding signal is supplied to the first transmission line to provide a high-band mode. When the electrical connection is disconnected, the feeding signal is supplied to the second transmission line to provide a low-band mode. In either band, a tuning voltage is supplied from the bias circuit to the variable-capacitance elements, whereby the tuning frequency of the antenna device can be changed.
Description
Technical field
The present invention relates to possess has on the matrix that is made of dielectric or magnetic banded radiation conductor by the antenna assembly of the antenna component of package, relate in particular to radiation conductor decentralized configuration variable-capacitance element and can be tuned to the antenna device for dual frequency bands of wide band frequency.
Background technology
In the past, known have at the antenna component that on the matrix of the column that is made of dielectric or magnetic radiation conductor be may be tuned to expected frequency after with the helical form package.In addition, in order to carry out tuning to wide band frequency with this antenna component, the antenna assembly that following mode constitutes had been proposed in the past, promptly to radiation conductor decentralized configuration variable-capacitance element, and will offer variable-capacitance element based on the tuning voltage of bias control signal and get capacitance variation, make the resonance frequency of radiation conductor change (for example, with reference to patent documentation 1) thus with tuning voltage.In relevant existing scheme, antenna component is mounted on the circuit substrate that is equipped with power supply circuits or biasing circuit etc., the power supply of the radiation conductor of antenna component is connected with power supply circuits, and variable-capacitance element is supplied with the tuning voltage of direct current from biasing circuit.The antenna component that may be tuned to wide band frequency like this not only can easily be built in portable radio machines such as pocket telephone, and the reception antenna that the UHF frequency band that can be used as television broadcasting is used etc., therefore measurable its use value can be more and more higher from now on.
Patent documentation 1: TOHKEMY 2005-210564 communique (4-6 page or leaf, Fig. 1)
But, because making the variable-capacitance element decentralized configuration is single antenna assembly in the above-mentioned existing scheme of radiation conductor, therefore exist if will the good frequency band of receiving sensitivity be widened, then the problem that will unavoidably maximize by increasing variable-capacitance element.Thereby, if want the UHF frequency band of whole receiving television broadcastings with this existing antenna assembly, the miniaturization that then is built in pocket telephone etc. the difficulty that just becomes.
Summary of the invention
The present invention proposes in view of the truth of this prior art, and its purpose is to provide a kind of antenna assembly that does not influence miniaturization and can obtain good reception sensitivity on broadband.
In order to achieve the above object, in antenna assembly of the present invention, said antenna device is constituted as: possess antenna component, this antenna component carries out package with band shape respectively with first radiation conductor and second radiation conductor on the matrix that is made of dielectric or magnetic, one end of two radiation conductors is connected to each other, and the other end of above-mentioned second radiation conductor is formed the open end, and, above-mentioned first radiation conductor and above-mentioned second radiation conductor are divided into a plurality of milliken conductor portion respectively, this adjacent milliken conductor portion is situated between each other is connected in series by variable-capacitance element, at the circuit substrate that the said chip antenna is installed, be provided with: the tie point supply power supply signal that first transmission lines, its end to described first and second radiation conductor are connected with each other and tie; Second transmission lines, its other end to above-mentioned first radiation conductor is supplied with power supply signal; The high frequency commutation circuit, it makes the input that is connected in this second transmission lines and is connected in that conducting disconnects between the output of above-mentioned first transmission lines; And biasing circuit, it will offer above-mentioned variable-capacitance element and make capacitance variation based on the tuning voltage of bias control signal, when above-mentioned high frequency commutation circuit makes between above-mentioned input and the above-mentioned output conducting, above-mentioned second radiation conductor can carry out resonance at high frequency band, and, make when disconnecting between above-mentioned input and the above-mentioned output in above-mentioned high frequency commutation circuit, above-mentioned first and second radiation conductor can carry out resonance in low-frequency band, even when having selected any of these high frequency bands and low-frequency band, tuned frequency also changes along with above-mentioned tuning voltage.
The antenna assembly of Gou Chenging like this, when the high frequency commutation circuit makes between input and the output conducting, the be connected with each other tie point of knot of one end of first and second radiation conductor is situated between and supplies with power supply signal by first transmission lines, and therefore can make the other end is that second radiation conductor of open end is at predetermined band (high frequency band) resonance.In addition, make when disconnecting between input and the output in the high frequency commutation circuit, power supply signal is not provided for first transmission lines, be provided for the other end of first radiation conductor by second transmission lines and be situated between, therefore can make the integral body of first and second radiation conductor at the frequency band lower (low-frequency band) resonance than above-mentioned high frequency band.That is, make conducting disconnection between input and the output, can at random select high band mode and band mode, therefore, can realize double frequency-bandization by supplying with and the corresponding power supply signal of selected frequency band by utilizing the high frequency commutation circuit.In addition, under the situation of any of having selected high frequency band and low-frequency band,, also can in the excursion of the capacitance of variable-capacitance element, suitably change the tuned frequency of each frequency band by supply with tuning voltage from biasing circuit.Thereby, can on broadband, not obtain good reception sensitivity even this antenna assembly maximizes yet.
In said structure, the circuit substrate that antenna component is installed is the antenna substrate with the external connection terminals that is connected with the wiring pattern of external circuit substrate (mother substrate), if be equipped with high frequency commutation circuit and biasing circuit at least at this antenna substrate, then can the antenna assembly that antenna component is installed in antenna substrate and carries out blocking (modularization) be installed simply at mother substrate, and can be different but be suitable for public antenna assembly as long as antenna performance equates the various mother substrates that get final product at circuit structure, therefore can obtain operability or the good antenna assembly of versatility.
In addition, in said structure, as long as set in advance the booster mechanism that is used for the voltage level of bias control signal is boosted to required size at biasing circuit, also the tuning voltage of antenna assembly can be set at than this supply voltage height even then the supply voltage of mother substrate side is low, therefore, do not exist control to bring the anxiety of influence to the capacitance of variable-capacitance element even under the situation in antenna assembly being built in the portable radio machine that supply voltage is set lowlyer yet.
In addition, in said structure, the milliken conductor portion of above-mentioned second radiation conductor of the tie point tied is divided into a plurality of thin conductor portion that is connected in series as long as a end that will the most close first and second radiation conductors is connected with each other, and can make between one of these each thin conductor portion and first transmission lines optionally selection circuit of conducting circuit substrate setting, but then when the selection of high frequency band, can adjust the frequency band of second radiation conductor of resonance.As this selection circuit, for example between each the thin conductor portion and first transmission lines, get involved diverter switch is set, can use this diverter switch to make conducting between of each thin conductor portion and first transmission lines, or between one of each thin conductor portion and first transmission lines, get involved chip parts such as chip capacitor or zero ohm chip-resistance are set.
The invention effect
Antenna assembly of the present invention, by utilizing the high frequency commutation circuit to make conducting disconnection between input and the output, high frequency band and low-frequency band can be at random selected, therefore, the antenna assembly of double frequency-band can be obtained by supplying with and the corresponding power supply signal of selected frequency band.In addition, even under the situation of any of having selected high frequency band and low-frequency band,, also can in the excursion of the capacitance of variable-capacitance element, suitably change the tuned frequency of each frequency band by supply with tuning voltage from biasing circuit.Thereby this antenna assembly also can obtain good reception sensitivity even without maximization on broadband.
Description of drawings
Fig. 1 is the outside drawing that the related antenna assembly of expression first execution mode of the present invention example is installed in the state behind the mother substrate.
Fig. 2 is the equivalent circuit diagram of the band mode of this antenna assembly.
Fig. 3 is the equivalent circuit diagram of the high band mode of this antenna assembly.
Fig. 4 is the equivalent circuit diagram of the band mode of the related antenna assembly of second execution mode example of the present invention.
Fig. 5 is the equivalent circuit diagram of the high band mode of this antenna assembly.
Fig. 6 is the equivalent circuit diagram of the band mode of the related antenna assembly of the 3rd execution mode example of the present invention.
Fig. 7 is the equivalent circuit diagram of the high band mode of this antenna assembly.
Fig. 8 is the equivalent circuit diagram of the band mode of the related antenna assembly of the 4th execution mode example of the present invention.
Fig. 9 is the equivalent circuit diagram of the high band mode of this antenna assembly.
1,20,40, the 50-antenna assembly among the figure:; The 2-antenna component; The 3-antenna substrate; The 4-matrix; 5-first radiation conductor; 6-second radiation conductor; 5a～5c, 6a～6c-milliken conductor portion; 6a-1,6a-2, the thin conductor portion of 6a-3-; The 7-variable-capacitance element; 8-first transmission lines; 9-second transmission lines; 10-high frequency diverter switch (high frequency commutation circuit); The 10a-input; The 10b-output; The 11-biasing circuit; 14a～14d-external connection terminals; 15-DC/DC transducer (booster mechanism); The 16-diverter switch; 17-chip capacitor (chip part); The 30-mother substrate; The P1-tie point; The P2-feeder ear; The Q-open end.
Embodiment
With reference to description of drawings working of an invention mode, Fig. 1 is the outside drawing that the related antenna assembly of expression first execution mode of the present invention example is installed in the state behind the mother substrate, Fig. 2 is the equivalent circuit diagram of the band mode of this antenna assembly, and Fig. 3 is the equivalent circuit diagram of the high band mode of this antenna assembly.
The related antenna assembly 1 of present embodiment example is the device that is installed in antenna component 2 on the antenna substrate 3 and carries out blocking (modularization), and as shown in Figure 1, it is on the mother substrate 30 that antenna substrate 3 is installed in external circuit substrate.This mother substrate 30 is circuit substrates built-in in portable radio machines such as pocket telephone, the reception antenna that antenna assembly 1 is used as the UHF frequency band of television broadcasting.Therefore, though the diagram of not giving is equipped with the tuning circuit of antenna assembly 1 usefulness etc. on mother substrate 30.
The antenna component 2 of antenna assembly 1 mainly comprises: the matrix 4 of the column that is made of dielectric; At the outer surface of this matrix 4 with helical form by first radiation conductor 5 of package and second radiation conductor 6; A plurality of variable-capacitance elements (variable capacitance diode) 7 of decentralized configuration in the circuit of two radiation conductors 5,6.One end of first and second radiation conductor 5,6 is in the tie point P1 binding that is one another in series.The other end of first radiation conductor 5 is feeder ear P2, and the other end of second radiation conductor 6 is open end Q.First radiation conductor 5 is divided into a plurality of milliken conductor 5a～5c of portion, adjacent milliken conductor portion each other (between 5a, the 5b or between 5b, the 5c) be situated between and be connected in series by capacity cell 7.Equally, second radiation conductor 6 is divided into a plurality of milliken conductor 6a～6c of portion, adjacent milliken conductor portion each other (between 6a, the 6b or between 6b, the 6c) be situated between and be connected in series by variable-capacitance element 7.This antenna component 2 positioning and fixing on antenna substrate 3, and the suitable position of first and second radiation conductor 5,6 is welded on the wiring pattern of antenna substrate 3.In addition, the material of matrix 4 also can be magnetic, and its shape also can be tabular.
Be equipped with at antenna substrate 3: first transmission lines 8, its tie point P1 to first and second radiation conductor 5,6 supplies with power supply signal; Second transmission lines 9, its feeder ear P2 to first radiation conductor 5 supplies with power supply signal; High frequency diverter switch 10, it makes input 10a give conducting disconnection between the output 10b; Biasing circuit 11, it will offer the variable-capacitance element 7 of antenna component 2 and make capacitance variation based on the tuning voltage of bias control signal; The frequency adjustment that is connected with second radiation conductor 6 pattern 12; Match circuit, it comprises inductor 13 and capacitor etc., and makes input impedance and characteristic impedance coupling; External connection terminals 14a～14d with the wiring pattern that is welded on mother substrate 30.
These external connection terminals 14a～14d is connected with tuning circuit with the not shown power circuit of mother substrate 30 sides.For example, to the supply voltage V of external connection terminals 14a input from power circuit
DD, external connection terminals 14b is imported power supply signal RF from tuning circuit.In addition, to the bias control signal of external connection terminals 14c, be used to make high frequency diverter switch 10 to connect the switch controlling signal V (CTL) that disconnects from the tuning circuit input to external connection terminals 14d from tuning circuit input tuning voltage V (TUNE) usefulness.In addition, frequency adjustment shown in Figure 1 by suitable position being repaired (trimming), can be carried out inching with pattern 12 to the electrical length of second radiation conductor 6, can avoid the deviation of antenna performance by this inching.
The input 10a of high frequency diverter switch 10 is connected with the power supply circuits of tuning circuit, and is connected with second transmission lines 9.The output 10b of high frequency diverter switch 10 is connected with first transmission lines 8, under the switch connection state that input 10a and output 10b are switched on, is situated between and can supplies with power supply signal RF by 8 couples of tie point P1 of first transmission lines.In addition, under the switch off state that is disconnected (being that conducting is interdicted) between input 10a and the output 10b, be situated between and supply with power supply signal RF by 9 couples of feeder ear P2 of second transmission lines.This high frequency diverter switch 10 is in the switch connection state when supplying with switch controlling signal V (CTL), be in switch off state when not supplying with switch controlling signal V (CTL).
Be provided with at biasing circuit 11: DC/DC transducer 15, it boosts to constant operating voltage (for example 5 volts) all the time with supply voltage V (DD) (for example 3 volts); The FET switching circuit, its output according to this DC/DC transducer 15 (operating voltage) and bias control signal (pulse width modulating signal) generate the end offset signal of boosting; With the smoothing circuit, it carries out smoothing to this end offset signal of boosting, and generates the tuning voltage V (TUNE) of direct current.By this biasing circuit 11, tuning voltage V (TUNE) is for example being changed in 0.2～4.8 volt range according to the pulse duration of bias control signal.Thereby, by being offered variable-capacitance element 7, tuning voltage V (TUNE) makes capacitance variation, can suitably change the tuned frequency of antenna component 2.
Next, the action to the antenna assembly 1 that constitutes like that as mentioned above describes.This antenna assembly 1, as shown in Figure 2, when high frequency diverter switch 10 is in the switch off state that makes between input 10a and the output 10b when disconnecting, can be situated between and supply with power supply signal RF, therefore can make the integral body of first and second radiation conductor 5,6 with predetermined band (low-frequency band) resonance by 9 couples of feeder ear P2 of second transmission lines.And,, then can suitably change the tuned frequency (resonance frequencys of first and second radiation conductor 5,6 integral body) of antenna component 2 if the tuning voltage V (TUNE) that is applied to variable-capacitance element 7 is changed in this low-frequency band.
In addition, as shown in Figure 3, when high frequency diverter switch 10 is in the switch connection state that makes input 10a and output 10b conducting, can be situated between and supply with power supply signal RF, therefore can make second radiation conductor 6 with the frequency band higher (high frequency band) resonance than above-mentioned low-frequency band by 8 couples of tie point P1 of first transmission lines.At this moment, corresponding with high frequency band power supply signal RF can be provided to second transmission lines 9 that intervention is provided with capacitor 13 hardly.And, if the tuning voltage V (TUNE) that is applied to variable-capacitance element 7 is changed, then can suitably change the tuned frequency (resonance frequency of second radiation conductor 6) of antenna component 2.
Like this, the antenna assembly 1 that the present embodiment example is related, by utilizing high frequency diverter switch 10 to make conducting disconnection between input 10a and the output 10b, just can select high band mode and band mode arbitrarily, therefore by supplying with the power supply signal RF corresponding, can be implemented in all spendable double frequency-bandization under any frequency band of height with selected frequency band.In addition, even under the situation of any of having selected high frequency band and low-frequency band, by supplying with tuning voltage V (TUNE) from biasing circuit 11, also can be in the excursion of the capacitance of variable-capacitance element 7 tuned frequency of each frequency band of change.Thereby this antenna assembly 1 is not only kept the miniaturization that can easily be built in the portable radio machine, and can obtain good reception sensitivity under broadband, thereby is suitable as the reception antenna that the UHF frequency band of television broadcasting is used.
In addition, since this antenna assembly 1 for be installed in antenna component 2 on the antenna substrate 3 and carry out blocking after module, therefore on mother substrate 30, install easily, and can need only antenna performance in the circuit structure difference and equate that the various mother substrates 30 that get final product are suitable for public antenna assemblies 1, thereby operability and versatility are good.Wherein, when the substrate that need not to use antenna-specific makes antenna assembly 1 blocking, also can be on the mother substrate 30 that is equipped with transmission lines 8,9 and high frequency diverter switch 10 and biasing circuit 11 etc. direct mounting core chip antenna 2.
In addition, in this antenna assembly 1, biasing circuit 11 has the DC/DC transducer 15 of the size that the voltage level that makes bias control signal boosts to regulation, even the supply voltage of mother substrate 30 sides is lower, also the tuning voltage V (TUNE) of antenna assembly 1 can be set at than this supply voltage height, therefore in the portable radio machine that supply voltage is set lowlyer, be built-in with under the situation of antenna assembly 1, also can not exist control to bring the anxiety of influence the capacitance of variable-capacitance element 7.
Fig. 4 is the equivalent circuit diagram of the band mode of the related antenna assembly of second execution mode of the present invention example, and Fig. 5 is the equivalent circuit diagram of the high band mode of this antenna assembly, to Fig. 2,3 corresponding part mark prosigns, omit repeat specification thus.
In the related antenna assembly 20 of present embodiment example, therefore near the circuit structure till having adopted tuning voltage V (TUNE) with direct current to be added to supply to behind the power supply signal RF antenna component can simplify the layout of the wiring pattern of mother substrate side.Under the situation of this second execution mode example, as shown in Figure 4, make when disconnecting between input 10a and the output 10b in high frequency diverter switch 10, can make first and second radiation conductors, 5,6 integral body in low-band resonance, as shown in Figure 5, when high frequency diverter switch 10 makes input 10a and output 10b conducting, can make second radiation conductor 6 at high frequency band resonance.And, same with above-mentioned first execution mode example, under the situation of any of selecting high frequency band and low-frequency band, supply with tuning voltage V (TUNE) and make the capacitance variation of variable-capacitance element 7, can change the tuned frequency of each frequency band thus.
Fig. 6 is the equivalent circuit diagram of the band mode of the related antenna assembly of the 3rd execution mode example of the present invention, Fig. 7 is the equivalent circuit diagram of the high band mode of this antenna assembly, to with Fig. 2,3 corresponding parts mark prosign, the repetitive description thereof will be omitted thus.
The difference of the antenna assembly 1 that antenna assembly 40 that the present embodiment example is related and first execution mode example are related is, with the 6a of milliken conductor portion of second radiation conductor 6 of the most close tie point P1 further segmentation cut and form a plurality of (for example being 3) that are connected in series thin conductor portion 6a-1,6a-2,6a-3, and utilize in the diverter switch 16 of installing on the antenna substrate 3 and can make optionally conducting between these thin conductor portion 6a-1,6a-2,6a-3 and first transmission lines 8, structure in addition is substantially the same.Diverter switch 16 is the 3 position diverter switches that change the contact position of travelling contact at 3 fixed contacts, the terminal of deriving from this travelling contact is connected with first transmission lines 8, and the terminal of deriving from 3 fixed contacts is connected with thin conductor portion 6a-1,6a-2,6a-3 respectively.Though first transmission lines 8 and thin conductor portion 6a-3 Jie are in the state of conducting by diverter switch 16 in illustrated embodiment, but drive by travelling contact, can make first transmission lines 8 switch to state with other thin conductor portion 6a-1 or 6a-2 conducting diverter switch 16.
In the related antenna assembly 40 of the 3rd execution mode example that constitutes like this, as shown in Figure 6, be in when making the switch off state that disconnects between input 10a and the output 10b in high frequency diverter switch 10, can be situated between and supply with power supply signal RF, therefore can make first and second radiation conductor 5,6 integral body in low-band resonance by 9 couples of feeder ear P2 of second transmission lines.In addition, as shown in Figure 7, when high frequency diverter switch 10 is in the switch connection state that makes input 10a and output 10b conducting, can supply with power supply signal RF from the thin conductor portion 6a-3 that first transmission lines 8 is situated between by the 6a of 16 pairs of milliken conductor portions of diverter switch, therefore can make second radiation conductor 6 at high frequency band resonance from thin conductor portion 6a-3 to open end Q.And, same with above-mentioned first execution mode example, under the situation of any of having selected high frequency band and low-frequency band, supply with tuning voltage V (TUNE) and make the capacitance variation of variable-capacitance element 7, can change the tuned frequency of each frequency band.
In addition, this antenna assembly 40 is selected each thin conductor portion 6a-1,6a-2 of first transmission lines 8 and second radiation conductor 6, the conducting state between the 6a-3 by using diverter switch 16, when having selected high frequency band, can change the L length of second radiation conductor 6 that carries out resonance, therefore according to the electric wave situation that is built-in with the employed area of portable wireless device of antenna assembly 40, when selecting high frequency band, but can adjust the frequency band of second radiation conductor 6 of resonance.Promptly, make like that as mentioned above under the situation that is in conducting state between first transmission lines 8 and the thin conductor portion 6a-3 at high frequency band (high frequency band) and carry out resonance, if make between first transmission lines 8 and the thin conductor portion 6a-2 and be in conducting state, then can make second radiation conductor 6 than its low a little frequency band (high frequency band) resonance from thin conductor portion 6a-2 to open end Q, be in conducting state if make between first transmission lines 8 and the thin conductor portion 6a-1, then can make second radiation conductor 6 at further low frequency band (high frequency band) resonance from thin conductor portion 6a-1 to open end Q.
Fig. 8 is the equivalent circuit diagram of the band mode of the related antenna assembly of the 4th execution mode of the present invention example, and Fig. 9 is the equivalent circuit diagram of the high band mode of this antenna assembly, to Fig. 6,7 corresponding part mark prosigns, omit repeat specification thus.
In the related antenna assembly 50 of present embodiment example, make the conducting by the chip capacitor of installing on antenna substrate 3 17 that is situated between between each thin conductor portion 6a-1,6a-2,6a-3 of second radiation conductor 6 and first transmission lines 8, structure in addition is substantially the same with the 3rd above-mentioned execution mode example.Under the situation of the 4th execution mode example, as shown in Figure 8, make when disconnecting between input 10a and the output 10b in high frequency diverter switch 10, can make first and second radiation conductor 5,6 integral body in low-band resonance, as shown in Figure 9, when high frequency diverter switch 10 makes between input 10a and the output 10b conducting, can make second radiation conductor 6 at high frequency band resonance.And, same with above-mentioned first execution mode example, when having selected any of high frequency band and low-frequency band,, can change the tuned frequency of each frequency band by supplying with the capacitance variation that tuning voltage V (TUNE) makes variable-capacitance element 7.
In addition, this antenna assembly 50 changes conducting state between each thin conductor portion 6a-1,6a-2,6a-3 one and first transmission lines 8 by the installation site of selecting antenna component 17, thereby when having selected high frequency band, can change the L length of second radiation conductor 6 that carries out resonance, therefore can be according to the electric wave situation in the employed area of portable wireless device that is built-in with antenna assembly 50, but the frequency band of second radiation conductor 6 of resonance when selecting high frequency band, can be adjusted.In addition, replace chip capacitor 17 and adopt zero ohm chip (chip) resistance, or be pre-formed be used to connect between each thin conductor portion 6a-1,6a-2,6a-3 and first transfer path 83 at antenna substrate 3 and select patterns, and stay these and select of patterns and cut off other two and also can.
Claims (6)
1, a kind of antenna assembly,
Possess: antenna component, this antenna component carries out package with band shape respectively with first radiation conductor and second radiation conductor on the matrix that is made of dielectric or magnetic, one end of two radiation conductors is connected to each other, and the other end of above-mentioned second radiation conductor is formed the open end, and, above-mentioned first radiation conductor and above-mentioned second radiation conductor are divided into a plurality of milliken conductor portion respectively, and this adjacent milliken conductor portion is situated between each other to be connected in series by variable-capacitance element
At the circuit substrate that the said chip antenna is installed, be provided with: the tie point supply power supply signal that first transmission lines, its end to described first and second radiation conductor are connected with each other and tie; Second transmission lines, its other end to above-mentioned first radiation conductor is supplied with power supply signal; The high frequency commutation circuit, it makes the input that is connected in this second transmission lines and is connected in to connect between the output of above-mentioned first transmission lines and disconnects; And biasing circuit, it will offer above-mentioned variable-capacitance element and make capacitance variation based on the tuning voltage of bias control signal,
When above-mentioned high frequency commutation circuit makes between above-mentioned input and the above-mentioned output conducting, above-mentioned second radiation conductor can carry out resonance at high frequency band, and, make when disconnecting between above-mentioned input and the above-mentioned output in above-mentioned high frequency commutation circuit, above-mentioned first and second radiation conductor can carry out resonance in low-frequency band, even when having selected any of these high frequency bands and low-frequency band, tuned frequency also changes along with above-mentioned tuning voltage.
2, antenna assembly according to claim 1 is characterized in that,
The foregoing circuit substrate is the antenna substrate with the external connection terminals that is connected with the wiring pattern of external circuit substrate, sets above-mentioned high frequency commutation circuit and above-mentioned biasing circuit at least at this antenna substrate.
3, antenna assembly according to claim 1 is characterized in that,
Be provided with booster mechanism at above-mentioned biasing circuit, this booster mechanism makes the voltage level of above-mentioned bias control signal boost to the size of regulation.
4, antenna assembly according to claim 1 is characterized in that,
The above-mentioned milliken conductor portion of above-mentioned second radiation conductor of the most close above-mentioned tie point is divided into a plurality of thin conductor portion that is connected in series, and at the foregoing circuit substrate selection circuit is set, this selection circuit can make optionally conducting between of above-mentioned each thin conductor portion and above-mentioned first transmission lines.
5, antenna assembly according to claim 4 is characterized in that,
Above-mentioned selection circuit is to get involved the diverter switch that is provided with between above-mentioned each thin conductor portion and above-mentioned first transmission lines.
6, antenna assembly according to claim 4 is characterized in that,
Above-mentioned selection circuit is the chip part that is provided with of getting involved between of above-mentioned each thin conductor portion and above-mentioned first transmission lines.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006170373 | 2006-06-20 | ||
| JP2006170373 | 2006-06-20 | ||
| JP2006303975 | 2006-11-09 |
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|---|---|
| CN101093911A true CN101093911A (en) | 2007-12-26 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200710110151 Pending CN101093911A (en) | 2006-06-20 | 2007-06-18 | Antenna device having high reception sensitivity over wide band |
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| CN (1) | CN101093911A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102484311A (en) * | 2009-07-22 | 2012-05-30 | 三星电子株式会社 | Method For Fabricating Antenna Device Of Mobile Communication Terminal |
| US8437786B1 (en) | 2011-12-21 | 2013-05-07 | Huawei Technologies Co., Ltd. | Method and device for adjusting frequency band mode |
| CN103229351A (en) * | 2010-11-24 | 2013-07-31 | 三菱综合材料株式会社 | Antenna apparatus |
| CN111183554A (en) * | 2017-10-03 | 2020-05-19 | 株式会社村田制作所 | Antenna module and method for inspecting antenna module |
-
2007
- 2007-06-18 CN CN 200710110151 patent/CN101093911A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102484311A (en) * | 2009-07-22 | 2012-05-30 | 三星电子株式会社 | Method For Fabricating Antenna Device Of Mobile Communication Terminal |
| CN102484311B (en) * | 2009-07-22 | 2015-12-09 | 三星电子株式会社 | Manufacture the method for the antenna device of mobile communication terminal |
| US9231298B2 (en) | 2009-07-22 | 2016-01-05 | Samsung Electronics Co., Ltd. | Antenna device of mobile communication terminal |
| EP2457284A4 (en) * | 2009-07-22 | 2017-09-20 | Samsung Electronics Co., Ltd. | Method for fabricating antenna device of mobile communication terminal |
| CN103229351A (en) * | 2010-11-24 | 2013-07-31 | 三菱综合材料株式会社 | Antenna apparatus |
| US8437786B1 (en) | 2011-12-21 | 2013-05-07 | Huawei Technologies Co., Ltd. | Method and device for adjusting frequency band mode |
| CN111183554A (en) * | 2017-10-03 | 2020-05-19 | 株式会社村田制作所 | Antenna module and method for inspecting antenna module |
| CN111183554B (en) * | 2017-10-03 | 2021-09-17 | 株式会社村田制作所 | Antenna module and method for inspecting antenna module |
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Open date: 20071226 |