CN101092290A - Method for raising second order nonlinear coefficient of glass - Google Patents
Method for raising second order nonlinear coefficient of glass Download PDFInfo
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- CN101092290A CN101092290A CN 200710052084 CN200710052084A CN101092290A CN 101092290 A CN101092290 A CN 101092290A CN 200710052084 CN200710052084 CN 200710052084 CN 200710052084 A CN200710052084 A CN 200710052084A CN 101092290 A CN101092290 A CN 101092290A
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- order nonlinear
- electric field
- nonlinear coefficient
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Abstract
This invention provides a method for increasing second harmonic coefficient of glass. The method comprises: utilizing an electron beam to interact with glass, detecting the parameters of the micro electric field of glass under external electric field action according to secondary emission electrons' generation and change, calculating the formation of glass microstructure and overall structure change caused by the micro electric field, constructing the magnitude and relationship curve of glass second harmonic wave, and increasing its second harmonic coefficient by adjusting the strength of the external electric field. The method can increase second harmonic coefficient of glass by increasing the EDC value of micro electric field of glass formed by external electric field polarization, and finds a new route to second-order nonlinear optical glass with high performance.
Description
Technical field
The present invention relates to the opticglass field, particularly relate to a kind of novel method that improves glass properties.
Background technology
In all-optical network, photoswitch and display thereof are one of core technologies, also are one of principal elements that influences the optical-fiber network performance.And the prerequisite that light shutter device is moved is to prepare the nonlinear optical material of excellent property, therefore, nonlinear optical material has caused the great interest of people as the critical material in the photoelectron technology, developing high performance optical material with big nonlinear factor is one of current advanced subject, become the focus of various countries' scholar's research, at non-linear optic crystal, the research of the compound nonlinear material of organic and organic-inorganic aspect, the various countries scholar furthers investigate, numerous paper publishings are also arranged every year, but aspect the non-crystalline state nonlinear optical material, especially the discussion of its nonlinear polarization mechanism also has many need of work further investigations at present.
After in glass, observing second harmonic and producing this strange phenomenon, and a series of good characteristics that glass itself is had make glass exhibit one's skill to the full at optical communication field, because glass is transparent at most of spectral range inner height, have high chemical stability, thermostability and higher third-order non-linear coefficient and fast many excellent characteristic such as time of response, thereby cause attracting attention of domestic and international many experts.Therefore, glass also will be a kind of nonlinear optical material of excellent property, will have broad application prospects on photoelectric devices such as integrated optics, glass planar optical waveguide and photoswitch.The various countries scholar is also launching deep research aspect the nonlinear optical properties of glass, units such as China's Fudan University in Shanghai, Shanghai optical precision optical machinery institute of the Chinese Academy of Sciences, Peking University, Jilin University, Southeast China University and Wuhan University of Technology have also launched many research work in this respect, and have obtained good result.
For glass, according to:
x
(2)＝3x
(3)E
DC
X wherein
(2)Be the second order nonlinear coefficient of glass, x
(3)Be the third-order non-linear coefficient of glass, E
DCBe the little electric field value of formed microcell that polarizes.Want to improve the second order nonlinear coefficient x of glass
(2), have only the third-order non-linear coefficient x that improves glass
(3)With the little electric field value E of the formed microcell of polarization
DCThe various countries investigator mainly concentrates on by various means for improving the second order nonlinear coefficient of glass at present, and synthetic have than big x
(3)The glass system of coefficient, and take different polarization methods, so that glass has bigger second order nonlinear coefficient; And for the little electric field value E of formed microcell that polarizes by raising glass
DCPerformance, thereby the technology that improves second order nonlinear coefficient of glass is few.
Summary of the invention
Technical problem to be solved by this invention is: a kind of novel method that improves second order nonlinear coefficient of glass is provided, and this method passes through to improve the little electric field value of the formed microcell of polarization, thereby provides a kind of different thinking for improving second order nonlinear coefficient of glass.
The technical solution adopted in the present invention is that the step of this method comprises:
(1) utilizes the generation and the variation characteristic thereof of secondary emission electron in electron beam and the glass interaction process, record glass under outer field action, polarize direction, size, stability, the relaxation property of the little electric field of microcell that forms;
(2) by the parameters of the little electric field of step (1) gained microcell, calculate it and cause the situation that silica micro structure forms and one-piece construction changes, and the second harmonic performance of while tested glass;
The relation of the situation that (3) establishment step (2) gained silica micro structure forms, one-piece construction changes and the second harmonic size of glass;
(4) according to step (3) gained relation, the relation curve of establishment step (1) centre field size and second order nonlinear coefficient of glass;
(5) according to step (4) gained relation, improve second order nonlinear coefficient of glass by accurate adjustment outfield size.
The present invention compared with prior art, its major advantage is: by improving the little electric field value E of the outfield polarization formed microcell of polarization
DCTherefore, improved the second order nonlinear coefficient x of glass
(2), that is to say the method that improves the quadratic nonlinearity coefficient of glass that found.Simultaneously, size and performance by test analysis glass little electric field of formed microcell under the polarization condition of outfield, analyze the outfield to glass structure and Effect on Performance, and with the checking of the relation of glass second nonlinear, found the outfield polarization condition that can greatly improve the quadratic nonlinearity coefficient of glass, thereby opened up new approach for preparing high-performance second nonlinear optic glass.
Description of drawings
Fig. 1 is the SEM-LEO 440 testing apparatus structural representations through repacking.
Fig. 2 is that the secondary emission electron of H:Ge:SiO2 film under the room temperature produces (δ) result schematic diagram.
Fig. 3 is the little direction of an electric field of polarization of hot polar H:Ge:SiO2 film.
Fig. 4 is the H:SiO that is mixed with Ge
2The structural representation of PEVCD film.
Embodiment
The invention provides the method for the raising second order nonlinear coefficient of glass that a kind of employing may further comprise the steps, that is:
(1) utilizes the generation and the variation characteristic thereof of secondary emission electron in electron beam and the glass interaction process, record under outer field action, the polarize parameter that comprises direction, size, stability and relaxation property of the little electric field of microcell that forms of glass;
(2) by the parameters of the little electric field of step (1) gained microcell, calculate it and cause the situation that silica micro structure forms and one-piece construction changes, and the second harmonic performance of while tested glass;
The relation of the situation that (3) establishment step (2) gained silica micro structure forms, one-piece construction changes and the second harmonic size of glass;
(4) according to step (3) gained relation, the relation of establishment step (1) centre field size and second order nonlinear coefficient of glass;
(5), improve second order nonlinear coefficient of glass by accurate adjustment outfield size according to step (4) gained relation curve.
The present invention also provides the equipment of the little electric pulse field parameter of microcell described in a kind of test procedure (1), its structure as shown in Figure 1: comprise that electron-beam generator EBBU, focusing objective len, electron collector, sample cavity, signal amplifier, oscilloscope and electron beam produce activator appliance; Electron beam produces activator appliance and is connected to oscillographic first input terminus, electron collector is equipped with in the focusing objective len lower end, electron collector is connected to oscillographic second input terminus by signal amplifier, and show sample is because the secondary electron quantity of electric charge Q that beam bombardment produced
SBElectron collector has electron beam hole simultaneously, and the electron collector below is a sample cavity, captures portions of electronics when focused beam produces secondary electron by electron beam hole bombardment sample, so just produces the electronics of inducing of equivalent amount on sample cavity; Sample cavity is connected to oscillographic the 3rd input terminus demonstration by signal amplifier and induces electronic charge Q
SB
Electron collector can directly be read collected number of electrons by oscilloscope.Among Fig. 1: Q
ICFor inducing electronic charge, Q
TBe the trapped electron quantity of electric charge, Q
SBBe the secondary electron and the backscattered electron quantity of electric charge that produces.
Q wherein
IC=-Q
T, Q
0=Q
SB+ Q
IC, secondary emission electron value δ (D J) is defined as:
Quantity of electric charge D in the size of δ and the experiment (〉=0.01pC) or electric density σ and current density, J (〉=10
+ 3PAcm
-2) size relevant.Under different electronic beam currents or voltage, the little electric field of microcell will show different various performance characteristics, the value that detects in the experiment can be studied the characteristic of the glass polarization little electric field of microcell that forms by these variations, thereby carry out the POLARIZATION MECHANISM analysis also with different.
The working process of testing apparatus of the present invention is: as shown in Figure 1, the electron beam A that electron-beam generator produces total charge dosage after electron beam produces the activator appliance activation is Q
0, show its number by oscilloscope.The electron beam Q that is activated
0(being A ') directly bombarded and produced secondary electron on the sample after process focusing objective len (being the object lens shown in Fig. 1) focused on, and its electric weight is Q
SBPortions of electronics is captured by sample in the beam bombardment sample simultaneously, and its electric weight is Q
TBecause producing on the electron collector that acts on sample cavity of these trapped electrons and inducing electronics, its quantity of electric charge is Q
ICQ wherein
ICAnd Q
TQuantity equates, opposite in sign.Secondary electron and induce electronics to be amplified by signal amplifier after send into oscilloscope respectively and show its quantity.Like this, (D, J) calculation formula is calculated the δ size according to three kinds of quantities of electric charge shown in the oscilloscope and δ.
Raising second order nonlinear coefficient of glass provided by the invention, its application in preparation high-performance second nonlinear optic glass.For example: the application in oxide glass and the contour nonlinear second-order optical susceptibility glass of nonoxide glass.
The invention will be further described below in conjunction with concrete Application Example, but do not limit the present invention.
Embodiment
Mix the H:SiO of Ge
2PEVCD film, its structure are the SiO that mixes Ge of 1.1 μ m
2Layer is plated in SiO
2On the substrate, there is the SiO of one deck 1 μ m the centre
2The transition layer (see figure 4), the concrete composition of film is 76 ± 1mol%SiO
2, 23 ± 1mol%GeO
2, 1.5 ± 0.5mol%O
2And a small amount of ppm H
2Film does not pass through any anneal before polarization, on both ends of the surface, plate～the Al electrode of 1.2 μ m carry out thermoaeization, and concrete polarization condition is: polarization volts DS-30V～-100V, polarization time 15min, 375 ℃ of polarization temperature.Adopt H after the sample polarization
3PO
4Immersion 20min removes the Al electrode and carries out the secondary emission electron test again under 75 ℃ of temperature.Secondary emission electron produces test result as shown in Figure 2, beam energy E=5keV wherein, incident degree of depth 530nm, the little incident electron beam dose of Fig. 2 a＜1.210
6PC/cm
2, the big electron beam incident dosage 2.510 of Fig. 2 b
8PC/cm
2Polarize little direction of an electric field as shown in Figure 3.
Claims (5)
1. method that improves second order nonlinear coefficient of glass is characterized in that adopting the method that may further comprise the steps:
(1) utilizes the generation and the variation characteristic thereof of secondary emission electron in electron beam and the glass interaction process, record under outer field action, the polarize parameter that comprises direction, size, stability and relaxation property of the little electric field of microcell that forms of glass;
(2) parameters of the little electric field of mountain step (1) gained microcell is calculated it and is caused the situation that silica micro structure forms and one-piece construction changes, and the second harmonic performance of while tested glass;
The relation of the situation that (3) establishment step (2) gained silica micro structure forms, one-piece construction changes and the second harmonic size of glass;
(4) according to step (3) gained relation, the relation of establishment step (1) centre field size and second order nonlinear coefficient of glass;
(5), improve second order nonlinear coefficient of glass by accurate adjustment outfield size according to step (4) gained relation curve.
2. the method for raising second order nonlinear coefficient of glass according to claim 1, it is characterized in that the structure of the equipment of the little electric pulse field parameter of testing micro zone is in the step (1): comprise that electron-beam generator EBBU, focusing objective len, electron collector, sample cavity, signal amplifier, oscilloscope and electron beam produce activator appliance; Electron beam produces activator appliance and is connected to oscillographic first input terminus, electron collector is equipped with in the focusing objective len lower end, electron collector is connected to oscillographic second input terminus by signal amplifier, and show sample is because the secondary electron quantity of electric charge Q that beam bombardment produced
SBElectron collector has electron beam hole simultaneously, and the electron collector below is a sample cavity, captures portions of electronics when focused beam produces secondary electron by electron beam hole bombardment sample, so just produces the electronics of inducing of equivalent amount on sample cavity; Sample cavity is connected to oscillographic the 3rd input terminus demonstration by signal amplifier and induces electronic charge Q
SB
3. the method for raising second order nonlinear coefficient of glass according to claim 2 is characterized in that: according to measure different number of electrons calculate secondary emission electron size δ (D, formula J) is:
Q wherein
1CFor inducing electronic charge, Q
1Be the trapped electron quantity of electric charge, Q
SBBe the secondary electron and the backscattered electron quantity of electric charge that produces, Q
1C=-Q
1, Q
0=Q
SB+ Q
1C
4. method that improves second order nonlinear coefficient of glass, its application in preparation second nonlinear optic glass.
5. application according to claim 4 is characterized in that: described second nonlinear optic glass is meant oxide glass and nonoxide glass.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007100520843A CN101092290B (en) | 2007-04-30 | 2007-04-30 | Method for raising second order nonlinear coefficient of glass |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007100520843A CN101092290B (en) | 2007-04-30 | 2007-04-30 | Method for raising second order nonlinear coefficient of glass |
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|---|---|---|---|
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101475322B (en) * | 2009-01-13 | 2011-02-09 | 武汉理工大学 | Method for generating second harmonic generation performance in glass |
| CN113165881A (en) * | 2018-10-18 | 2021-07-23 | 康宁股份有限公司 | Graphene doping by thermal polarization |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5434699A (en) * | 1991-01-23 | 1995-07-18 | Yeda Research And Development Co., Ltd. | Method and system for producing second order nonlinear optical effects using in-plane poled polymer films |
| JP4097763B2 (en) * | 1997-03-27 | 2008-06-11 | 松下電器産業株式会社 | Secondary nonlinear optical member, method for manufacturing the same, and light modulation element |
-
2007
- 2007-04-30 CN CN2007100520843A patent/CN101092290B/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101475322B (en) * | 2009-01-13 | 2011-02-09 | 武汉理工大学 | Method for generating second harmonic generation performance in glass |
| CN113165881A (en) * | 2018-10-18 | 2021-07-23 | 康宁股份有限公司 | Graphene doping by thermal polarization |
| CN113165881B (en) * | 2018-10-18 | 2024-04-05 | 康宁股份有限公司 | Graphene doping by thermal polarization |
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| CN101092290B (en) | 2011-03-16 |
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