CN101092290A - Method for raising second order nonlinear coefficient of glass - Google Patents

Method for raising second order nonlinear coefficient of glass Download PDF

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CN101092290A
CN101092290A CN 200710052084 CN200710052084A CN101092290A CN 101092290 A CN101092290 A CN 101092290A CN 200710052084 CN200710052084 CN 200710052084 CN 200710052084 A CN200710052084 A CN 200710052084A CN 101092290 A CN101092290 A CN 101092290A
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glass
order nonlinear
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刘启明
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Wuhan University of Technology WUT
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Abstract

本发明提供了提高玻璃二阶非线性系数的方法,即:先利用电子束与玻璃相互作用过程中二次发射电子的产生及其变化特性,测得玻璃在外场作用下极化所形成微区小电场的参数;再计算其导致玻璃微结构形成和整体结构变化的情况,同时测试和建立玻璃的二次谐波的大小和关系曲线,然后通过调整外场大小来提高玻璃的二阶非线性系数χ(2)。本发明通过提高外场极化所极化所形成的微区小电场值EDC,找到了提高玻璃的χ(2)的方法;同时,通过测试微区小电场的参数,分析外场对玻璃结构及性能的影响,以及与玻璃二阶非线性的关系验证,找到了提高χ(2)的外场极化条件,从而为制备高性能二阶非线性光学玻璃开辟了新的途径。

Figure 200710052084

The invention provides a method for improving the second-order nonlinear coefficient of glass, that is: firstly, the generation and change characteristics of the secondary emitted electrons during the interaction between the electron beam and the glass are used to measure the micro-area formed by the polarization of the glass under the action of an external field The parameters of the small electric field; then calculate the situation that it leads to the formation of glass microstructure and the change of the overall structure, and at the same time test and establish the size and relationship curve of the second harmonic wave of the glass, and then improve the second-order nonlinear coefficient of the glass by adjusting the size of the external field χ (2) . The present invention finds the method for improving the χ (2) of glass by increasing the micro-area small electric field value E DC formed by the polarization of the external field polarization; at the same time, by testing the parameters of the micro-area small electric field, the external field is analyzed to the glass structure and The impact of performance, and the verification of the relationship with the second-order nonlinearity of the glass, the external field polarization conditions for increasing χ (2) have been found, thus opening up a new way for the preparation of high-performance second-order nonlinear optical glasses.

Figure 200710052084

Description

A kind of method that improves second order nonlinear coefficient of glass
Technical field
The present invention relates to the opticglass field, particularly relate to a kind of novel method that improves glass properties.
Background technology
In all-optical network, photoswitch and display thereof are one of core technologies, also are one of principal elements that influences the optical-fiber network performance.And the prerequisite that light shutter device is moved is to prepare the nonlinear optical material of excellent property, therefore, nonlinear optical material has caused the great interest of people as the critical material in the photoelectron technology, developing high performance optical material with big nonlinear factor is one of current advanced subject, become the focus of various countries' scholar's research, at non-linear optic crystal, the research of the compound nonlinear material of organic and organic-inorganic aspect, the various countries scholar furthers investigate, numerous paper publishings are also arranged every year, but aspect the non-crystalline state nonlinear optical material, especially the discussion of its nonlinear polarization mechanism also has many need of work further investigations at present.
After in glass, observing second harmonic and producing this strange phenomenon, and a series of good characteristics that glass itself is had make glass exhibit one's skill to the full at optical communication field, because glass is transparent at most of spectral range inner height, have high chemical stability, thermostability and higher third-order non-linear coefficient and fast many excellent characteristic such as time of response, thereby cause attracting attention of domestic and international many experts.Therefore, glass also will be a kind of nonlinear optical material of excellent property, will have broad application prospects on photoelectric devices such as integrated optics, glass planar optical waveguide and photoswitch.The various countries scholar is also launching deep research aspect the nonlinear optical properties of glass, units such as China's Fudan University in Shanghai, Shanghai optical precision optical machinery institute of the Chinese Academy of Sciences, Peking University, Jilin University, Southeast China University and Wuhan University of Technology have also launched many research work in this respect, and have obtained good result.
For glass, according to:
x (2)=3x (3)E DC
X wherein (2)Be the second order nonlinear coefficient of glass, x (3)Be the third-order non-linear coefficient of glass, E DCBe the little electric field value of formed microcell that polarizes.Want to improve the second order nonlinear coefficient x of glass (2), have only the third-order non-linear coefficient x that improves glass (3)With the little electric field value E of the formed microcell of polarization DCThe various countries investigator mainly concentrates on by various means for improving the second order nonlinear coefficient of glass at present, and synthetic have than big x (3)The glass system of coefficient, and take different polarization methods, so that glass has bigger second order nonlinear coefficient; And for the little electric field value E of formed microcell that polarizes by raising glass DCPerformance, thereby the technology that improves second order nonlinear coefficient of glass is few.
Summary of the invention
Technical problem to be solved by this invention is: a kind of novel method that improves second order nonlinear coefficient of glass is provided, and this method passes through to improve the little electric field value of the formed microcell of polarization, thereby provides a kind of different thinking for improving second order nonlinear coefficient of glass.
The technical solution adopted in the present invention is that the step of this method comprises:
(1) utilizes the generation and the variation characteristic thereof of secondary emission electron in electron beam and the glass interaction process, record glass under outer field action, polarize direction, size, stability, the relaxation property of the little electric field of microcell that forms;
(2) by the parameters of the little electric field of step (1) gained microcell, calculate it and cause the situation that silica micro structure forms and one-piece construction changes, and the second harmonic performance of while tested glass;
The relation of the situation that (3) establishment step (2) gained silica micro structure forms, one-piece construction changes and the second harmonic size of glass;
(4) according to step (3) gained relation, the relation curve of establishment step (1) centre field size and second order nonlinear coefficient of glass;
(5) according to step (4) gained relation, improve second order nonlinear coefficient of glass by accurate adjustment outfield size.
The present invention compared with prior art, its major advantage is: by improving the little electric field value E of the outfield polarization formed microcell of polarization DCTherefore, improved the second order nonlinear coefficient x of glass (2), that is to say the method that improves the quadratic nonlinearity coefficient of glass that found.Simultaneously, size and performance by test analysis glass little electric field of formed microcell under the polarization condition of outfield, analyze the outfield to glass structure and Effect on Performance, and with the checking of the relation of glass second nonlinear, found the outfield polarization condition that can greatly improve the quadratic nonlinearity coefficient of glass, thereby opened up new approach for preparing high-performance second nonlinear optic glass.
Description of drawings
Fig. 1 is the SEM-LEO 440 testing apparatus structural representations through repacking.
Fig. 2 is that the secondary emission electron of H:Ge:SiO2 film under the room temperature produces (δ) result schematic diagram.
Fig. 3 is the little direction of an electric field of polarization of hot polar H:Ge:SiO2 film.
Fig. 4 is the H:SiO that is mixed with Ge 2The structural representation of PEVCD film.
Embodiment
The invention provides the method for the raising second order nonlinear coefficient of glass that a kind of employing may further comprise the steps, that is:
(1) utilizes the generation and the variation characteristic thereof of secondary emission electron in electron beam and the glass interaction process, record under outer field action, the polarize parameter that comprises direction, size, stability and relaxation property of the little electric field of microcell that forms of glass;
(2) by the parameters of the little electric field of step (1) gained microcell, calculate it and cause the situation that silica micro structure forms and one-piece construction changes, and the second harmonic performance of while tested glass;
The relation of the situation that (3) establishment step (2) gained silica micro structure forms, one-piece construction changes and the second harmonic size of glass;
(4) according to step (3) gained relation, the relation of establishment step (1) centre field size and second order nonlinear coefficient of glass;
(5), improve second order nonlinear coefficient of glass by accurate adjustment outfield size according to step (4) gained relation curve.
The present invention also provides the equipment of the little electric pulse field parameter of microcell described in a kind of test procedure (1), its structure as shown in Figure 1: comprise that electron-beam generator EBBU, focusing objective len, electron collector, sample cavity, signal amplifier, oscilloscope and electron beam produce activator appliance; Electron beam produces activator appliance and is connected to oscillographic first input terminus, electron collector is equipped with in the focusing objective len lower end, electron collector is connected to oscillographic second input terminus by signal amplifier, and show sample is because the secondary electron quantity of electric charge Q that beam bombardment produced SBElectron collector has electron beam hole simultaneously, and the electron collector below is a sample cavity, captures portions of electronics when focused beam produces secondary electron by electron beam hole bombardment sample, so just produces the electronics of inducing of equivalent amount on sample cavity; Sample cavity is connected to oscillographic the 3rd input terminus demonstration by signal amplifier and induces electronic charge Q SB
Electron collector can directly be read collected number of electrons by oscilloscope.Among Fig. 1: Q ICFor inducing electronic charge, Q TBe the trapped electron quantity of electric charge, Q SBBe the secondary electron and the backscattered electron quantity of electric charge that produces.
Q wherein IC=-Q T, Q 0=Q SB+ Q IC, secondary emission electron value δ (D J) is defined as:
δ ( D , J ) = Q SB Q 0 = 1 - Q IC Q 0
Quantity of electric charge D in the size of δ and the experiment (〉=0.01pC) or electric density σ and current density, J (〉=10 + 3PAcm -2) size relevant.Under different electronic beam currents or voltage, the little electric field of microcell will show different various performance characteristics, the value that detects in the experiment can be studied the characteristic of the glass polarization little electric field of microcell that forms by these variations, thereby carry out the POLARIZATION MECHANISM analysis also with different.
The working process of testing apparatus of the present invention is: as shown in Figure 1, the electron beam A that electron-beam generator produces total charge dosage after electron beam produces the activator appliance activation is Q 0, show its number by oscilloscope.The electron beam Q that is activated 0(being A ') directly bombarded and produced secondary electron on the sample after process focusing objective len (being the object lens shown in Fig. 1) focused on, and its electric weight is Q SBPortions of electronics is captured by sample in the beam bombardment sample simultaneously, and its electric weight is Q TBecause producing on the electron collector that acts on sample cavity of these trapped electrons and inducing electronics, its quantity of electric charge is Q ICQ wherein ICAnd Q TQuantity equates, opposite in sign.Secondary electron and induce electronics to be amplified by signal amplifier after send into oscilloscope respectively and show its quantity.Like this, (D, J) calculation formula is calculated the δ size according to three kinds of quantities of electric charge shown in the oscilloscope and δ.
Raising second order nonlinear coefficient of glass provided by the invention, its application in preparation high-performance second nonlinear optic glass.For example: the application in oxide glass and the contour nonlinear second-order optical susceptibility glass of nonoxide glass.
The invention will be further described below in conjunction with concrete Application Example, but do not limit the present invention.
Embodiment
Mix the H:SiO of Ge 2PEVCD film, its structure are the SiO that mixes Ge of 1.1 μ m 2Layer is plated in SiO 2On the substrate, there is the SiO of one deck 1 μ m the centre 2The transition layer (see figure 4), the concrete composition of film is 76 ± 1mol%SiO 2, 23 ± 1mol%GeO 2, 1.5 ± 0.5mol%O 2And a small amount of ppm H 2Film does not pass through any anneal before polarization, on both ends of the surface, plate~the Al electrode of 1.2 μ m carry out thermoaeization, and concrete polarization condition is: polarization volts DS-30V~-100V, polarization time 15min, 375 ℃ of polarization temperature.Adopt H after the sample polarization 3PO 4Immersion 20min removes the Al electrode and carries out the secondary emission electron test again under 75 ℃ of temperature.Secondary emission electron produces test result as shown in Figure 2, beam energy E=5keV wherein, incident degree of depth 530nm, the little incident electron beam dose of Fig. 2 a<1.210 6PC/cm 2, the big electron beam incident dosage 2.510 of Fig. 2 b 8PC/cm 2Polarize little direction of an electric field as shown in Figure 3.

Claims (5)

1.一种提高玻璃二阶非线性系数的方法,其特征是采用包括以下步骤的方法:1. A method for improving the second-order nonlinear coefficient of glass is characterized in that the method comprising the following steps is adopted: (1)利用电子束与玻璃相互作用过程中二次发射电子的产生及其变化特性,测得玻璃在外场作用下极化所形成微区小电场的包括方向、大小、稳定性和弛豫性的参数;(1) Using the generation and change characteristics of the secondary emitted electrons during the interaction between the electron beam and the glass, the direction, size, stability and relaxivity of the small electric field formed by the polarization of the glass under the action of an external field are measured parameters; (2)山步骤(1)所得微区小电场的各项参数,计算其导致玻璃微结构形成和整体结构变化的情况,并同时测试玻璃的二阶谐波性能;(2) Calculate the parameters of the small electric field in the micro-area obtained in step (1), calculate the situation that it leads to the formation of glass microstructure and the change of the overall structure, and test the second-order harmonic performance of the glass at the same time; (3)建立步骤(2)所得玻璃微结构形成、整体结构变化的情况与玻璃的二次谐波大小的关系;(3) Establishing the relationship between the formation of the glass microstructure in step (2), the overall structure change and the size of the second harmonic of the glass; (4)根据步骤(3)所得关系,建立步骤(1)中外场大小和玻璃二阶非线性系数的关系;(4) according to step (3) gained relation, establish the relation of external field size and glass second-order nonlinear coefficient in step (1); (5)根据步骤(4)所得关系曲线,通过准确调整外场大小来提高玻璃二阶非线性系数。(5) According to the relationship curve obtained in step (4), the second-order nonlinear coefficient of the glass is increased by accurately adjusting the size of the external field. 2.根据权利要求1所述的提高玻璃二阶非线性系数的方法,其特征在于步骤(1)中,测试微区小电场参数的设备的结构是:包括电子束发生器EBBU、聚焦物镜、电子收集器、样品腔、信号放大器、示波器和电子束产生激活器;电子束产生激活器接至示波器的第一个输入端,聚焦物镜下端装有电子收集器,电子收集器通过信号放大器接至示波器的第二个输入端,显示样品由于电子束轰击所产生的二次电子电荷量QSB;同时电子收集器有电子束孔,电子收集器下方是样品腔,聚焦电子束通过电子束孔轰击样品产生二次电子的同时俘获部分电子,这样就在样品腔上产生同等数量的诱导电子;样品腔通过信号放大器接至示波器的第三个输入端显示诱导电子电荷量QSB2. the method for improving the second-order nonlinear coefficient of glass according to claim 1 is characterized in that in the step (1), the structure of the equipment for testing the micro-district small electric field parameters is: comprising electron beam generator EBBU, focusing objective lens, Electron collector, sample cavity, signal amplifier, oscilloscope and electron beam generator; the electron beam generator is connected to the first input of the oscilloscope, and the lower end of the focusing objective lens is equipped with an electron collector, which is connected to the The second input terminal of the oscilloscope displays the secondary electron charge Q SB generated by the sample due to the electron beam bombardment; at the same time, the electron collector has an electron beam hole, and the sample cavity is below the electron collector, and the focused electron beam is bombarded through the electron beam hole The sample generates secondary electrons while trapping some electrons, so that the same amount of induced electrons is generated on the sample cavity; the sample cavity is connected to the third input terminal of the oscilloscope through a signal amplifier to display the induced electron charge Q SB . 3.根据权利要求2所述的提高玻璃二阶非线性系数的方法,其特征在于:根据测量不同的电子数目计算出二次发射电子大小δ(D,J)的公式为:3. The method for improving the second-order nonlinear coefficient of glass according to claim 2, characterized in that: the formula for calculating the secondary emission electron size δ (D, J) according to the number of different electrons measured is: δδ (( DD. ,, JJ )) == QQ SBSB QQ 00 == 11 -- QQ ICIC QQ 00 其中Q1C为诱导电子电荷量,Q1为俘获电子电荷量,QSB为产生的二次电子及背散射电子电荷量,Q1C=-Q1,Q0=QSB+Q1CWhere Q 1C is the charge of induced electrons, Q 1 is the charge of captured electrons, Q SB is the charge of secondary electrons and backscattered electrons, Q 1C = -Q 1 , Q 0 =Q SB +Q 1C . 4.一种提高玻璃二阶非线性系数的方法,其在制备二阶非线性光学玻璃中的应用。4. A method for increasing the second-order nonlinear coefficient of glass, and its application in preparing second-order nonlinear optical glass. 5.根据权利要求4所述的应用,其特征在于:所述的二阶非线性光学玻璃是指氧化物玻璃及非氧化物玻璃。5. The application according to claim 4, characterized in that: said second-order nonlinear optical glass refers to oxide glass and non-oxide glass.
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101475322B (en) * 2009-01-13 2011-02-09 武汉理工大学 A method of generating second harmonic generation properties in glass
CN113165881A (en) * 2018-10-18 2021-07-23 康宁股份有限公司 Graphene doping by thermal polarization

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5434699A (en) * 1991-01-23 1995-07-18 Yeda Research And Development Co., Ltd. Method and system for producing second order nonlinear optical effects using in-plane poled polymer films
JP4097763B2 (en) * 1997-03-27 2008-06-11 松下電器産業株式会社 Secondary nonlinear optical member, method for manufacturing the same, and light modulation element

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101475322B (en) * 2009-01-13 2011-02-09 武汉理工大学 A method of generating second harmonic generation properties in glass
CN113165881A (en) * 2018-10-18 2021-07-23 康宁股份有限公司 Graphene doping by thermal polarization
CN113165881B (en) * 2018-10-18 2024-04-05 康宁股份有限公司 Graphene doping via thermal polarization

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