CN101086626A - Lithography - Google Patents
Lithography Download PDFInfo
- Publication number
- CN101086626A CN101086626A CN 200710005302 CN200710005302A CN101086626A CN 101086626 A CN101086626 A CN 101086626A CN 200710005302 CN200710005302 CN 200710005302 CN 200710005302 A CN200710005302 A CN 200710005302A CN 101086626 A CN101086626 A CN 101086626A
- Authority
- CN
- China
- Prior art keywords
- zone
- area
- substrate
- scan
- photoetching process
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001459 lithography Methods 0.000 title abstract description 6
- 238000000034 method Methods 0.000 claims abstract description 123
- 239000000758 substrate Substances 0.000 claims abstract description 112
- 230000005855 radiation Effects 0.000 claims abstract description 25
- 238000001259 photo etching Methods 0.000 claims description 48
- 230000033001 locomotion Effects 0.000 claims description 47
- 238000000059 patterning Methods 0.000 claims description 38
- 230000007717 exclusion Effects 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 238000012544 monitoring process Methods 0.000 claims description 5
- 238000013459 approach Methods 0.000 claims description 4
- 238000000671 immersion lithography Methods 0.000 abstract description 29
- 239000010410 layer Substances 0.000 description 20
- 239000004065 semiconductor Substances 0.000 description 16
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000012530 fluid Substances 0.000 description 7
- 238000013461 design Methods 0.000 description 6
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 3
- 229910001634 calcium fluoride Inorganic materials 0.000 description 3
- 229940095626 calcium fluoride Drugs 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000012797 qualification Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- ISQINHMJILFLAQ-UHFFFAOYSA-N argon hydrofluoride Chemical compound F.[Ar] ISQINHMJILFLAQ-UHFFFAOYSA-N 0.000 description 2
- OYLGJCQECKOTOL-UHFFFAOYSA-L barium fluoride Chemical compound [F-].[F-].[Ba+2] OYLGJCQECKOTOL-UHFFFAOYSA-L 0.000 description 2
- 229910001632 barium fluoride Inorganic materials 0.000 description 2
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000007596 consolidation process Methods 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000005350 fused silica glass Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 230000008595 infiltration Effects 0.000 description 2
- 238000001764 infiltration Methods 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000004576 sand Substances 0.000 description 2
- 238000012163 sequencing technique Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000005361 soda-lime glass Substances 0.000 description 2
- 229910021642 ultra pure water Inorganic materials 0.000 description 2
- 239000012498 ultrapure water Substances 0.000 description 2
- FGRBYDKOBBBPOI-UHFFFAOYSA-N 10,10-dioxo-2-[4-(N-phenylanilino)phenyl]thioxanthen-9-one Chemical compound O=C1c2ccccc2S(=O)(=O)c2ccc(cc12)-c1ccc(cc1)N(c1ccccc1)c1ccccc1 FGRBYDKOBBBPOI-UHFFFAOYSA-N 0.000 description 1
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- 229910016036 BaF 2 Inorganic materials 0.000 description 1
- 229910004261 CaF 2 Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 229910006501 ZrSiO Inorganic materials 0.000 description 1
- VZPPHXVFMVZRTE-UHFFFAOYSA-N [Kr]F Chemical compound [Kr]F VZPPHXVFMVZRTE-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000002354 daily effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000002274 desiccant Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000003203 everyday effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Landscapes
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
A lithography process to pattern a plurality of fields on a substrate is disclosed. The process includes scanning a first field along a first direction using a radiation beam. Thereafter, the processes steps to a second field adjacent the first field and located behind the first field when the first and second fields are viewed along the first direction. The second field is then scanned along the first direction using the radiation beam. According to the direction provided by the invention, and the stepping movable value, the pollution during immersion lithography process can be reduced or eliminated substantially.
Description
Technical field
The present invention relates to a kind of photoetching process, particularly a kind of photoetching process that reduces pollution.
Background technology
Along with the semiconductor fabrication technology is carried out continuously to reduce characteristic dimension, for example 65nm, 45nm then must adopt immersion lithography (immersion lithography) mode to littler size.Yet, utilize during the photoetching treatment of immersion lithography system, for example bubble (bubble), particle (particle) and washmarking pollutions such as (water residue) can enter in the immersion lithography system, and can pollute the semi-conductor chip that will carry out manufacture process.This pollution can cause defective (defect) and decrease in yield.
Summary of the invention
Given this, the objective of the invention is to reduce or eliminate pollution during photolithographic processes substantially.
For realizing the above-mentioned purpose of invention, the invention provides a kind of photoetching process, be positioned at a plurality of zones on the substrate with patterning.Described photoetching process comprises utilizes a radiation beam to scan a first area along a first direction; Step to a second area that is adjacent to this first area then, and when this first area and this second area when this first direction is watched, this second area is positioned at after this first area; Utilize described radiation beam to scan this second area then along this first direction.
Described photoetching process also can comprise and steps to one the 3rd zone that is adjacent to this second area, the 3rd zone is arranged in the rectangular district that comprises this first area and this second area, and when this second area and the 3rd zone both when this first direction is watched, the 3rd zone is positioned at after this second area.Utilize described radiation beam to scan the 3rd zone then along this first direction.Described photoetching manufacturing method can comprise that also patterning is arranged in a plurality of zones in another rectangular district on this substrate, comprises the following steps: to utilize a radiation beam to scan one the 5th zone along a second direction; Step to one the 6th zone that is adjacent to the 5th zone, and when the 5th zone and the 6th zone both when this second direction is watched, the 6th zone is positioned at after the 5th zone; And utilize described radiation beam to scan the 6th zone along this second direction.This second direction can be near being parallel to this first direction.This second direction can be approaching in contrast to this first direction among another embodiment.This first area of described scanning or scan this second area and can comprise that scanning comprises each zone of a soak solution, this soak solution is between this substrate and an objective system.This radiation beam can comprise ultraviolet ray.This substrate comprises an image bearing layer, is plated on this substrate.The described step that steps to this second area comprises along stepping to this second area near a step direction that is parallel to this first direction from this first area.Described step direction is near being parallel to this first direction, and the angle between this step direction and this first direction is less than 20 °.This substrate comprises the semiconductor chip.This first area of described scanning comprises an one scan speed and a stepping rate with the step that steps to this second area, and this stepping rate is less than this sweep velocity.
The present invention provides a kind of photoetching process again, in order to patterning one substrate, described photoetching process comprises step: one first area of patterning one substrate, this first area has a plurality of zones, described a plurality of zone is arranged at along in a plurality of locus in the rectangular district that first direction extends, and this first area of described patterning one substrate comprises step: along approaching each zone of one (scanning) scanning direction that is parallel to this first direction; And along step to next zone from each described zone near one (stepping) direction that is parallel to this first direction.
Described photoetching process also can comprise step: a second area of this substrate of patterning, wherein this second area surrounds this first area substantially, and this second area approaches the edge of this substrate.The step of described this second area of patterning can comprise each zone of scanning; And step to another zone from a zone with minimum stepper distances.This second area can two area definition between the concentric circles.Described two concentrically ringed radius differences can be less than 55mm.
The present invention provides a kind of photoetching process again, pollute in order to the monitoring manufacture process, described photoetching process comprises step: patterning one first substrate, it has a plurality of mutual exclusions zone, described a plurality of mutual exclusions zone comprises an adjacent first area and a second area, the step of this first substrate of described patterning comprises: to have the one scan action of one first amount of movement, scan this first area; Then to have the one first stepwise operation stepping of one second amount of movement; And, scanning this second area to have the one scan action of one the 3rd amount of movement, this second amount of movement is substantially less than this first amount of movement and the 3rd amount of movement; Patterning one second substrate, this second substrate has other a plurality of mutual exclusions zone, described other a plurality of mutual exclusions zone comprises one the 3rd adjacent zone and one the 4th zone, the step of this second substrate of described patterning comprises: to have the one scan action of one the 4th amount of movement, scan the 3rd zone; Then to have the one second stepwise operation stepping of one the 5th amount of movement; And, scanning the 4th zone to have the one scan action of one the 6th amount of movement, the 5th amount of movement is substantially less than the 4th amount of movement and the 6th amount of movement; Described photoetching manufacturing method can comprise that also one of this first substrate relatively pollutes one of result and this second substrate and pollutes the result.
In the described photoetching process, the step of this first substrate of described patterning can comprise the one scan action of utilization along a first direction, scans this first area; Utilization steps to this second area along an approaching stepwise operation that is parallel to a second direction of this first direction from this first area; And utilize along the one scan of this first direction and move, scan this second area.The step of this second substrate of described patterning comprises: utilize the one scan action along a third direction, scan the 3rd zone; Utilization along one near in contrast to a four directions of third direction to stepwise operation, step to the 4th zone from the 3rd zone; And utilize along the one scan of a third direction and move, scan the 4th zone.
By direction of scanning given among the present invention and the stepping movement value in the stepwise operation, can reduce or eliminate pollution during the immersion lithography method is handled substantially.
Description of drawings
Fig. 1 is the synoptic diagram of the immersion lithography system of the embodiment of the invention.
Fig. 2 for the semi-conductor chip of the immersion lithography system scanning that utilizes Fig. 1 of the embodiment of the invention vertical view.
Fig. 3 is in the lithographic patterning process, is applied to the stepping-scanning process of semi-conductor chip.
Fig. 4 to Fig. 9 is the synoptic diagram of different embodiments of the invention, and it is in the lithographic patterning process, is applied to the stepping-scanning process of semi-conductor chip.
Wherein, description of reference numerals is as follows:
100 immersion lithography systems, 110 substrate pedestal, 115 substrates
120 lens combinations, 130 infiltrate storage modules, 132,134,136 holes
140 infiltrates, 150 controllers 220,220a, 220b, 220c, 220d zone
210 breach, 610 line 1-36 zones
Embodiment
Below utilize the process sectional view, to illustrate in greater detail the photoetching process of the preferred embodiment of the present invention.In various embodiments of the present invention, the assembly that identical symbolic representation is identical.
With reference to figure 1, it shows the synoptic diagram of the immersion lithography system 100 of the embodiment of the invention.Immersion lithography system 100 comprises one with the fixing substrate pedestal 110 of desiring the substrate 115 of patterning.Substrate pedestal 110 is for operating, with the substrate 115 of protection and mobile immersion lithography system 100.For instance, substrate pedestal 110 can be designed to can transmit and/or rotation displacement, with aligning, stepping and the scanning as substrate.Substrate pedestal 110 can comprise that different parts move accurately to be suitable for carrying out.
Can utilize substrate pedestal 110 with fixing base 115, and utilize system 110 to carry out described process.Substrate 115 can be the semi-conductor chip of silicon for example.In another embodiment, this semi-conductor chip can comprise an element semiconductor (elementary semiconductor), a compound semiconductor (compoundsemiconductor), an alloy semiconductor (alloy semiconductor) or their combination.This semi-conductor chip can comprise one or more layers material layer in order to be patterned, for example polysilicon (poly-silicon), metal and/or dielectric medium.Substrate 115 also comprises an image bearing layer (imaging layer) formed thereon.Image bearing layer can be a photoresist layer (impedance layer (resist layer), photographic layer (photo sensitive layer) or patterned layer (patteming layer)), and this photographic layer can be to the exposure process reaction to form pattern.This image bearing layer can be eurymeric or minus photoresist, and can have a sandwich construction.A chemical amplification type (chemicalamplifier, CA) photoresistance for example.
During immersion lithography is handled, can adopt a light shield (also can be considered a shielding (reticle)) in immersion lithography system 100.Light shield can comprise a transparency carrier and a patterning absorption layer.Can utilize for example consolidation silica sand (fused silica, the SiO of Pyrex (borosilicate glass) and soda-lime glass (sodalime glass)
2) as transparency carrier to prevent defective.Transparency carrier can comprise calcium fluoride and/or other suitable material.Can utilize multiple tracks to handle or a plurality of material formation patterning absorption layer, for example deposit the material film that chromium (Cr) or iron oxide (iron oxide) are made, or be molybdenum silicide (MoSi), zirconium monox (ZrSiO), silicon nitride (SiN) and/or titanium nitride inorganic thin films such as (TiN).Can design the light shield that has further feature or strengthen resolution technique, for example optical proximity effect correction (optical proximity correction, OPC) and/or the phase change light shield (phase shift mask, PSM).
This immersion lithography system 100 can be in order to carry out an infiltration type exposure technology (immersionexposure process).Among another embodiment, immersion lithography system 100 can be in order to carrying out dry lithography patterning process, and can design different infiltrate storage modules 130 or infiltrate storage module 130 is not set.The radiating light that utilizes the radiation light source to penetrate is with operation immersion lithography system 100, with image bearing layer (imaging layer) exposure that is plated on the substrate 115.
With reference to figure 2, the vertical view of the Fig. 1 of its demonstration one embodiment of the invention and the substrate 115 of one stepping-scanning process.The size of substrate 115 diameters can be different, for example are 200nm or 300nm.Substrate 115 can comprise for example location thing of breach (notch) 210.The a plurality of areas 220 of definition on substrate 115, and be also referred to as for example regional 220a to a plurality of zones such as regional 220d.Utilize a photoetching process to be formed in each zone 220 pre-defined in light shield or with the pattern (pattem) of other method definition, described photoetching process can be considered one stepping-scanning process (step-and-scan process).Stepping-scanning process narration as after, in addition can be with reference to figure 1.
In stepping-scanning process, lens combination 120 from a zone to another regional mode stepping (step) substrate 115.After stepping to a zone, utilize a radiation beam to scan this zone, on substrate 115, to form predefined pattern.During a stepwise operation, move substrate 115 with substrate pedestal 110, with next zone of location substrate for scanning.During the one scan action, a substrate 115 and a light shield move with different directions or with equidirectional, and this light shield has predefined pattern, and this predefined pattern is in order on each zone that is formed at substrate.In subsequent descriptions, " scanning motion " vocabulary shows the relative action of lens combination and substrate, even during scanning motion, in fact lens combination can not move.The scanning motion direction defines with the same manner.Similarly, " stepwise operation " vocabulary shows the relative action of lens combination (and light shield) and substrate, even during stepwise operation, lens combination (and light shield) in fact can not move.Yet, " along a direction from a zone to another regional stepping " expression is transmitted the direction that moves along the intact zone (just-scanned field) of firm scanning, and described transmission is moved intact zone of firm scanning and the neighboring region that then will be scanned are partly overlapped.
In one embodiment of this invention, along y scanning direction zone 220a.Lens combination steps to regional 220b along the x direction from regional 220a afterwards.Afterwards along y scanning direction zone 220b.Lens combination steps to regional 220c along the x direction from regional 220b afterwards, afterwards along y scanning direction zone 220c.Lens combination steps to regional 220d along the x direction from regional 220c afterwards, afterwards along y scanning direction zone 220d.Because regional 220a to 220d is set to same row and scanning in regular turn, regional 220a to 220d can be considered a rectangular district.Lens combination steps to next rectangular district then.Scan each zone in next rectangular district in regular turn.Stepping-scanning process, continues to carry out from a rectangular district to another rectangular district, till the All Ranges on the substrate all finishes to another zone from a zone.
With reference to figure 3, its show an embodiment substrate 115 vertical view and according to aforesaid stepping-scanning process.The a plurality of zones that are arranged in substrate 115 be according to its scanning sequency label be 1 to 36.For instance, first scanning area 1, then scanning area 2 is followed scanning area 3, up to scanning area 36.One first rectangular district, it comprises zone 1 to 4, next rectangular district comprises zone 5 to 10, by that analogy.Arrow in each zone is in order to indicate the direction of scanning.With the first rectangular district is example, along y scanning direction zone 1; Lens combination steps to zone 2 along the x direction from zone 1 then, then along y scanning direction zone 2; Lens combination steps to zone 3 along the x direction from zone 2 then, then along y scanning direction zone 3; Step to zone 4 then, then scanning area 4; Lens combination steps to the zone 5 in next rectangular district then.In this rectangular district, similarly stepping-scanning process continues on for all zones, till zones all on the substrate 115 all is scanned.According to described process, the stepping in each rectangular district is orthogonal or approaching vertical with scanning motion.Yet each stepwise operation in the described process can scan the intact zone of the firm scanning width of half approximately, therefore has to cause pollution or scatter the high likelihood that pollutes.
With reference to figure 4, it shows the vertical view of substrate 115 of an embodiment and stepping-scanning process of the embodiment that discloses according to the present invention.The a plurality of zones that are positioned on the substrate 115 are 1 to 36 according to its scanning sequency label.Arrow in each zone is in order to indicate the direction of scanning.Because the All Ranges in same rectangular district is with same scanning direction, this direction can be considered the direction of scanning in rectangular district.The first rectangular district comprises zone 1 and 2.At first along y scanning direction zone 1, lens combination steps to the zone 2 that is positioned at after regional 1 along the direction of scanning in the first rectangular district from zone 1 then.In other words, lens combination steps to zone 2 along the direction of scanning in the first rectangular district from zone 1.After the scanning area 1, lens combination (with respect to substrate) can surpass a bit of distance.Therefore, during the stepwise operation from zone 1 to zone 2, lens combination can retract (back off) a bit of distance, so that lens combination is positioned at the initial scanning position in zone 2.Moreover everything is action relatively, for example, moves even be actually substrate.
Then, lens combination steps to the zone 3 that is positioned at the second rectangular district, and along y scanning direction zone 3.Then lens combination steps to zone 4 along the y direction from zone 3, and along y scanning direction zone 4; Then lens combination steps to zone 5 along the y direction from zone 4, and along y scanning direction zone 5; And then step to the zone 7 that is positioned at the 3rd rectangular district.Similarly stepping-scanning process is used for the 3rd rectangular district, and the 4th rectangular district and other rectangular district are till all rectangular districts all finish.During above-mentioned stepping-scanning process as shown in Figure 4, in same rectangular district, have a direction from a zone to another regional stepwise operation, its parallel or approaching at least direction of scanning that is parallel to rectangular district, and stepwise operation has the stepping movement value of a minimum.Therefore, can reduce or eliminate pollution during the immersion lithography method is handled substantially.
Fig. 5 is the vertical view of the substrate 115 of another embodiment of the present invention.Zone 1 to 36 on the substrate 115 in the embodiment of the invention is according to the scanning sequency label.Arrow in each zone is in order to indicate the direction of scanning.Stepping-scanning process shown in Figure 5 is similar in appearance to stepping-scanning process shown in Figure 4.Among above-mentioned two embodiment, the lens combination in the rectangular district is along each zone of a scanning direction, and steps to another zone along equidirectional from a zone.Yet, stepping-scanning process of Fig. 5, its step direction from rectangular district to another rectangular district can be different.Similarly, because the stepping movement value that has a minimum to another regional stepwise operation from a zone, can reduce or eliminate pollution during the immersion lithography method is handled substantially.
Stepping-the scanning process of Fig. 4 and other embodiments of the invention shown in Figure 5 can have different combinations respectively.For instance, in a rectangular district, lens combination is along each zone of a scanning direction, and still steps to another zone along the zone of equidirectional from rectangular district.Can be designed to different directions from a rectangular district to another rectangular district, the stepwise operation in the rectangular district that for example is adjacent to each other can be equidirectional, or can be reverse direction in other embodiments.Similarly, because in same rectangular district, the stepping movement value that has a minimum to another regional stepwise operation from a zone can reduce or eliminates pollution during the immersion lithography method is handled substantially.
With reference to figure 6, it shows the vertical view of substrate 115 of an embodiment and stepping-scanning process of the embodiment that discloses according to the present invention.The a plurality of zones that are defined on the substrate 115 are to be divided into two groups (line of line 610 for fabricating, so with dashed lines drafting) with line 610.In the present embodiment, line 610 is a circle, first group of its defined range and second group, and first group in zone is arranged in the internal area that is surrounded by line 610, and second group in zone is arranged in or part is positioned at the edge area.Usually second group in zone is arranged in or partly is positioned at second area, and second area is to form with line 610 and the definition of another concentric circles, and described concentric circles has a radius, and its value is greater than the radius of circle 610.In one embodiment, second area can have the width along radial direction, and its value is about 50nm.During carrying out stepping-scanning process, carry out first group in the zone in the internal area earlier, and then carry out second group in the zone in the edge area.Be used to carry out the stepping-scanning process of regional first family group time, the process of its Fig. 4, Fig. 5 or its combination is similar.For instance, carry out the first family group time in zone, lens combination is along the All Ranges in a scanning direction one rectangular district, and steps to another zone along the zone of equidirectional from this rectangular district.Can be along same direction in abutting connection with the stepwise operation in rectangular district, or in other embodiments can be in opposite direction.Second group in the zone in the edge area carries out in a mode, so that minimize from a zone to another regional stepping movement value, or the pollution that stepping-scanning process causes minimizes.Stepping-the scanning process that is used for the zone of edge area is to carry out after the stepping-scanning process in the zone that is used for internal area.Therefore, the pollution that edge surface is manufactured minimizes, and can prevent that pollution effect from arriving the zone of internal area.Therefore, use above-mentioned stepping-scanning process, can make the immersion lithography method handle the pollution that causes and minimize.
Fig. 7 illustrates the vertical view of substrate 115 of an embodiment and stepping-scanning process of the embodiment that discloses according to the present invention.Substrate 115 comprises first group that is positioned at internal area, and it comprises zone 1 to 21, and second group that is arranged in area zone, edge, and it comprises zone 22 to 36.Zone 1 to 36 is all according to the scanning sequency label.Arrow in each zone is in order to indicate the direction of scanning.Lens combination is with the zone of the procedural mode scanning internal area of similar Fig. 4, and the stepping movement value scanning of following to reduce is arranged in the long-pending All Ranges of edge surface, and the stepping movement value that reduces spreads all over scanned zone before.
With reference to figure 8, it illustrates the vertical view of substrate 115, has a plurality of defined ranges on it, and this vertical view is handled the method for the pollution that causes in order to explanation monitoring immersion lithography method.Zone 1 to 36 is according to the scanning sequency label.Arrow in each zone is in order to indicate the direction of scanning.Utilization has 1 and 2 the first rectangular district, zone as an example, and with narration with explain described process, lens combination is along y scanning direction zone 1.Lens combination steps to zone 2 then, when zone 1 and zone 2 both when the direction of scanning in the first rectangular district is watched, zone 2 is positioned at (being the y direction in the present embodiment) after the zone 1, then along y scanning direction zone 2.Because in same rectangular district, from a zone to another regional stepwise operation along a direction, it is in contrast to the direction of scanning in rectangular district, therefore almost scanned all zones just having scanned and will scan of lens combination (being zone 1 in the present embodiment) enlarges the pollution that produces from stepwise operation.Therefore, this kind stepping-scanning process can be used for monitoring and control the pollution during the pollution during the photolithographic processes, particularly immersion lithography method are handled.
Fig. 9 is the vertical view and the stepping-scanning process of the substrate 115 of another embodiment.In Fig. 9, zone 1 to 36 is all according to the scanning sequency label.Arrow in each zone is in order to the expression direction of scanning.During stepping-scanning process, in same rectangular district, is along a direction from a zone to another regional stepwise operation, it is in contrast to the direction of scanning in rectangular district, so almost scanned all zones of just having scanned and will scan of lens combination, similarly, enlarged the pollution that produces from stepwise operation.
In the embodiment of a monitoring pollution method, first substrate utilizes Fig. 4 to carry out to one of them of those stepping-scanning processes shown in Figure 7.Second substrate utilize Fig. 8 and those stepping-scanning processes shown in Figure 9 one of them carry out.Measure and compare the pollution of first substrate and second substrate then, to obtain polluted information, measure the class of pollution, when contaminant capacity will arrive boundary or break bounds, to make process caution and/or starting corrective action.For instance, above-mentioned method for supervising can be included in the customary authentication procedure (routine qualification procedure), for example authentication procedure every day (daily qualificationprocedure), safeguard authentication procedure (maintenance qualification procedure) and/or board authentication procedure (tool qualification procedure).Above-mentioned method can have other different variation.For instance, second substrate can utilize stepping-scanning process, carries out in another kind of mode shown in Figure 3.
Moreover, can be in not breaking away from design of the present invention and scope, when doing a little change and retouching.For instance, Fig. 4 is to stepping-scanning process shown in Figure 7, lens combination scans the All Ranges in a rectangular district along same direction of scanning, and step to another zone along equidirectional or near the parallel zone of step direction from described rectangular district, the angle between direction of scanning and the step direction is less than 20 °.The present invention can be applicable to the case of dry lithographic processes manufacturing system of dry lithography process.Breach in order to the location is illustrated in each substrate of embodiment.For zone or rectangular district, breach can place different relative positions.Locating notch can be designed to for example flat mouthful different geometric configuratioies such as (flat).In one embodiment, stepping rate can be polluted to reduce less than sweep velocity substantially.
Therefore, the embodiment of the invention provides a kind of photoetching process, is positioned at a plurality of zones on the substrate with patterning.Described photoetching process comprises utilizes a radiation beam to scan a first area along a first direction; Step to one the 22 zone that is adjacent to this first area then, and when this first area and this second area when this first direction is watched, this second area is positioned at after this first area; Utilize described radiation beam to scan this second area then along this first direction.
Described photoetching process also can comprise and steps to one the 3rd zone that is adjacent to this second area, the 3rd zone is arranged in the rectangular district that comprises this first area and this second area, and when this second area and the 3rd zone both when this first direction is watched, the 3rd zone is positioned at after this second area.Utilize described radiation beam to scan the 3rd zone then along this first direction.Described photoetching process can comprise that also patterning is arranged in a plurality of zones in another rectangular district on this substrate, comprises the following steps: to utilize a radiation beam to scan one the 5th zone along a second direction; Step to one the 6th zone that is adjacent to the 5th zone, and when the 5th zone and the 6th zone both when this second direction is watched, the 6th zone is positioned at after the 5th zone; And utilize described radiation beam to scan the 6th zone along this second direction.This second direction can be near being parallel to this first direction.Among another embodiment, this second direction can be approaching in contrast to this first direction.This first area of described scanning or the step that scans this second area can comprise that scanning comprises each zone of a soak solution, and this soak solution is between this substrate and an objective system.Described radiation beam can comprise ultraviolet ray.This substrate comprises an image bearing layer, is plated on this substrate.The described step that steps to this second area comprises along stepping to this second area near a step direction that is parallel to this first direction from this first area.This step direction is near being parallel to this first direction, and the angle between this step direction and this first direction is less than 20 °.This substrate comprises the semiconductor chip.This first area of described scanning comprises an one scan speed and a stepping rate with the step that steps to this second area, and this stepping rate is less than this sweep velocity.
The present invention provides a kind of photoetching process again, it is in order to patterning one substrate, comprise: one first area of patterning one substrate, it has a plurality of zones, described a plurality of zone is arranged at along in a plurality of locus in the rectangular district that first direction extends, and comprising: along approaching each zone of one scan scanning direction that is parallel to this first direction; And along step to next zone from each this zone near a step direction that is parallel to this first direction.
Described photoetching process also can comprise step: a second area of this substrate of patterning then, wherein this second area surrounds this first area substantially, and this second area approaches the edge of this substrate.This second area of patterning can comprise each zone of scanning; And step to another zone from a zone with minimum stepper distances.This second area can two area definition between the concentric circles.Described two concentrically ringed radius differences can be less than 55mm.
The present invention provides a kind of photoetching process again, and it pollutes in order to monitor procedure, comprising: patterning one first substrate, it has a plurality of mutual exclusions zone, it comprises an adjacent first area and a second area, comprising: to have the one scan action of one first amount of movement, scan this first area; Then to have the one first stepwise operation stepping of one second amount of movement; And, scanning this second area to have the one scan action of one the 3rd amount of movement, this second amount of movement is substantially less than this first amount of movement and the 3rd amount of movement; Patterning one second substrate, it has other a plurality of mutual exclusions zone, and it comprises one the 3rd adjacent zone and one the 4th zone, comprising: to have the one scan action of one the 4th amount of movement, scan the 3rd zone; Then to have the one second stepwise operation stepping of one the 5th amount of movement; And, scanning the 4th zone to have the one scan action of one the 6th amount of movement, the 5th amount of movement is substantially less than the 4th amount of movement and the 6th amount of movement; Described photoetching process also can comprise step: relatively one of one of this first substrate pollution result and this second substrate pollutes the result.
In the described photoetching process, this first substrate of patterning can comprise the one scan action of utilization along a first direction, scans this first area; Utilization steps to this second area along an approaching stepwise operation that is parallel to a second direction of this first direction from this first area; And utilize along the one scan of this first direction and move, scan this second area.This second substrate of patterning comprises: utilize the one scan action along a third direction, scan the 3rd zone; Utilization along one near in contrast to a four directions of third direction to stepwise operation, step to the 4th zone from the 3rd zone; And utilize along the one scan of a third direction and move, scan the 4th zone.
The invention provides a kind of lithographic equipment.Described lithographic equipment comprises a lens combination; One substrate pedestal, it is arranged at this lens combination below; And a controller, it is coupled to this lens combination and this substrate pedestal.This lens combination, this substrate pedestal and this controller utilize each zone of one scan scanning direction that is parallel to this first direction along approaching for can be designed or sequencing; And along the mode that steps to next zone near a step direction that is parallel to this first direction from each this zone, patterning one substrate, this substrate has a plurality of zones, and described a plurality of zones are arranged at along in a plurality of locus in the rectangular district that first direction extends.Described lithographic equipment also can comprise an infiltrate storage module, and this infiltrate storage module is in order to store a fluid, and this fluid to small part is inserted between this lens combination and this substrate, and is arranged in the space on this substrate pedestal.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limit the present invention; in not breaking away from design of the present invention and protection domain; those skilled in the art can do a little change and retouching, so protection scope of the present invention is as the criterion with claims institute restricted portion of enclosing.
Claims (15)
1. photoetching process, it comprises step in regular turn in order to a plurality of zones that are positioned on the substrate of patterning:
Utilize a radiation beam to scan a first area along a first direction;
Step to a second area that is adjacent to this first area, and when this first area and a second area when this first direction is watched, this second area is positioned at after this first area; And
Utilize described radiation beam to scan this second area along this first direction.
2. photoetching process as claimed in claim 1, wherein, described photoetching process also comprises step:
Step to one the 3rd zone that is adjacent to this second area, the 3rd zone, this first area and this second area are a rectangular district, and described second area and described the 3rd zone both when this first direction is watched, the 3rd zone is positioned at after this second area; And
Utilize this radiation beam to scan the 3rd zone along this first direction.
3. photoetching process as claimed in claim 1, wherein, described photoetching process comprises that also patterning is arranged in the step in a plurality of zones in another rectangular district on this substrate, this step comprises:
Utilize this radiation beam to scan one the 5th zone along a second direction;
Step to one the 6th zone that is adjacent to the 5th zone, and the 5th zone and the 6th zone both when this second direction is watched, the 6th zone is positioned at after the 5th zone; And
Utilize this radiation beam to scan the 6th zone along this second direction.
4. photoetching process as claimed in claim 3, wherein, approximate this first direction that is parallel to of this second direction.
5. photoetching process as claimed in claim 3, wherein, this second direction is in contrast to this first direction.
6. photoetching process as claimed in claim 1, wherein, this first area of described scanning and this second area of scanning comprise that respectively scanning comprises each zone of a soak solution, this soak solution is between this substrate and an objective system.
7. photoetching process as claimed in claim 1, wherein, described this second area that steps to comprises along stepping to this second area near a step direction that is parallel to this first direction from this first area.
8. photoetching process as claimed in claim 7, wherein, this step direction is near being parallel to this first direction, and the angle between this step direction and this first direction is less than 20 °.
9. photoetching process as claimed in claim 1, wherein, this first area of described scanning and step to this second area and comprise an one scan speed and a stepping rate, this stepping rate is less than this sweep velocity.
10. photoetching process, in order to patterning one substrate, described photoetching process comprises step:
One first area of patterning one substrate, this first area has a plurality of zones, and these a plurality of zones are arranged at along in a plurality of locus in the rectangular district that first direction extends, and comprising:
Along approaching each zone of one scan scanning direction that is parallel to this first direction; And
Along step to next zone from each this zone near a step direction that is parallel to this first direction.
11. photoetching process as claimed in claim 10, wherein, described photoetching process also comprises:
One second area of this substrate of patterning, this second area surround this first area substantially, and this second area approaches the edge of this substrate.
12. photoetching process as claimed in claim 11, wherein, this second area of described patterning comprises:
Scan each zone; And
Step to another zone with minimum stepper distances from a zone.
13. photoetching process as claimed in claim 11, wherein, this second area defines with the area between two concentric circless.
14. photoetching process as claimed in claim 13, wherein, described two concentrically ringed radius differences are less than 55mm.
15. a photoetching process is polluted in order to the monitoring manufacture process, described photoetching process comprises:
Patterning one first substrate, it has a plurality of mutual exclusions zone, and described a plurality of mutual exclusions zone comprises an adjacent first area and a second area, and the step of this first substrate of described patterning comprises:
To have the one scan action of one first amount of movement, scan this first area;
Then to have the one first stepwise operation stepping of one second amount of movement; And
To have the one scan action of one the 3rd amount of movement, scan this second area, this second amount of movement is substantially less than this first amount of movement and the 3rd amount of movement;
Patterning one second substrate, second substrate have other a plurality of mutual exclusions zone, and described other a plurality of mutual exclusions zone comprises one the 3rd adjacent zone and one the 4th zone, and the step of this second substrate of described patterning comprises:
To have the one scan action of one the 4th amount of movement, scan the 3rd zone;
Then to have the one second stepwise operation stepping of one the 5th amount of movement; And
To have the one scan action of one the 6th amount of movement, scan the 4th zone, the 5th amount of movement is substantially less than the 4th amount of movement and the 6th amount of movement; And
Relatively one of one of this first substrate pollution result and this second substrate pollutes the result.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US80411106P | 2006-06-07 | 2006-06-07 | |
| US60/804,111 | 2006-06-07 | ||
| US11/461,234 | 2006-07-31 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101086626A true CN101086626A (en) | 2007-12-12 |
| CN100570494C CN100570494C (en) | 2009-12-16 |
Family
ID=38937642
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2007100053028A Expired - Fee Related CN100570494C (en) | 2006-06-07 | 2007-02-14 | Photoetching process |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100570494C (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105093858A (en) * | 2015-09-28 | 2015-11-25 | 上海华力微电子有限公司 | Lithography overlay correcting method |
| TWI602029B (en) * | 2012-05-17 | 2017-10-11 | 台灣積體電路製造股份有限公司 | Method for patterning a substrate |
-
2007
- 2007-02-14 CN CNB2007100053028A patent/CN100570494C/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI602029B (en) * | 2012-05-17 | 2017-10-11 | 台灣積體電路製造股份有限公司 | Method for patterning a substrate |
| CN105093858A (en) * | 2015-09-28 | 2015-11-25 | 上海华力微电子有限公司 | Lithography overlay correcting method |
| CN105093858B (en) * | 2015-09-28 | 2018-03-23 | 上海华力微电子有限公司 | A kind of method of lithography registration correction |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100570494C (en) | 2009-12-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI400585B (en) | Hybrid multi-layer mask and method for fabricating integrated circuit devices | |
| US8830446B2 (en) | Exposure apparatus | |
| US8133661B2 (en) | Superimpose photomask and method of patterning | |
| EP1260871A2 (en) | Position detecting method and apparatus, exposure apparatus and device manufacturing method | |
| US7666576B2 (en) | Exposure scan and step direction optimization | |
| US7022436B2 (en) | Embedded etch stop for phase shift masks and planar phase shift masks to reduce topography induced and wave guide effects | |
| CN103913960A (en) | System and method for lithography alignment | |
| US20110013160A1 (en) | Optical element, exposure apparatus based on the use of the same, exposure method, and method for producing microdevice | |
| CN101308326A (en) | Sensitized material, light resistance material and semiconductor assembly manufacture method | |
| US6373553B1 (en) | Photo-lithographic method to print a line-space pattern with a pitch equal to half the pitch of the mask | |
| US9952520B2 (en) | Method for semiconductor wafer alignment | |
| CN107783367B (en) | Phase shift photomask | |
| KR20180057813A (en) | Phase shift mask for extreme ultraviolet lithography | |
| US7745095B2 (en) | Lithographic method and device manufactured thereby | |
| JP2007235088A (en) | Optical element, exposure apparatus using the same, exposure method and method for manufacturing micro device | |
| US20100079743A1 (en) | Exposure apparatus, exposure method, and method for producing device | |
| US11520237B2 (en) | Method and apparatus for dynamic lithographic exposure | |
| CN100570494C (en) | Photoetching process | |
| US8377613B2 (en) | Reflective photomask and method of fabricating the same | |
| US8323859B2 (en) | Optical compensation devices, systems, and methods | |
| EP3428723A1 (en) | Optical element, exposure apparatus based on the use of the same, exposure method and method for producing microdevice | |
| KR101788377B1 (en) | Lithography method and structure for resolution enhancement with a two-state mask | |
| CN101221362A (en) | Method and apparatus to improve lithography throughput | |
| KR100735530B1 (en) | Reflective photomask including a mesa shaped reflective layer and method for fabricating the same | |
| JP2009162851A (en) | Mask, method for manufacturing the same, exposure method and apparatus, and device manufacturing method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20091216 |