CN101086566A - Display panel, photoelectric device containing same and drive method and manufacture method - Google Patents
Display panel, photoelectric device containing same and drive method and manufacture method Download PDFInfo
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- CN101086566A CN101086566A CN 200710137674 CN200710137674A CN101086566A CN 101086566 A CN101086566 A CN 101086566A CN 200710137674 CN200710137674 CN 200710137674 CN 200710137674 A CN200710137674 A CN 200710137674A CN 101086566 A CN101086566 A CN 101086566A
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Abstract
The invention relates to a display panel, electro-optical device and its drive method and manufacturing method. The panel comprises a first base plate that comprises a main area and at least a surrounding area, with the former having several pixels and each composed of at least one switch component connected to the signal electrically, a second base plate corresponding to or overlapping the first base plate main area and exposing the surrounding area, composed of a shared electrode, a diecoefficient layer between the two base plates, a first photosensitive element at the surrounding area of the first base plate and composed of a semiconductor switch element, at least a second photosensitive element on the first base plate and composes of a semiconductor switch element, a photosensitive circuit connected to the first and the second photosensitive elements electrically. It is used to inspect the visible light wave value and the overall wave length value to acquire the invisible wave length value.
Description
Technical field
The present invention relates to a kind of display device and manufacture method thereof and purposes, especially about a kind of display panel with several Photosensing Units.
Background technology
In recent years, because of the ozonosphere of the barrier earth is destroyed improperly by the mankind, (ultraviolet UV), caused that amount of ultraviolet irradiation constantly improves on the earth can't to cover ultraviolet ray in the sunshine effectively.Too high amount of ultraviolet irradiation is except that causing many environment problems such as destruction as unusual weather conditions, greenhouse effect, crop production reduction, ecosystem balance; (especially wave band is the UV of 320 nanometer to 400 nanometers to ultraviolet irradiation
AAnd wave band is the UV of 290 nanometer to 320 nanometers
B) also health is worked the mischief, such as skin occur blackspot, freckle and wrinkle, because of DNA be damaged produce catabiosis, cutaneum carcinoma generation probability improve, reduce vitamin D in the body formation, cause that function of immune system etc. takes place, suppresses for acute keratitis and conjunctivitis, the chronic cataract of initiation.
Except that ultraviolet ray, also contain the very infrared ray of heat-flash effect of tool in the sunshine, easily absorbed the back and produce heat by object.Therefore,, will cause water evaporates on skin temperature rising, telangiectasis and hyperemia, the acceleration epidermis, skin will be caused harmful effect because of ultrared absorption when human body is exposed to ultrared irradiation following time; Also can to a certain degree injury be arranged, cause visual deterioration the retina in the eye and iris.In addition, when human body is exposed to infrared ray and ultraviolet irradiation following time simultaneously, infrared ray also can strengthen the detrimental effect of ultraviolet ray to skin.
Apparently, (especially sunshine directly tans by the sun down) has the demand that can learn in real time as the radiant quantity of harmful light such as ultraviolet ray, infrared ray in fact in environment for human survival.Especially, in aesthetic nursing and therapeutic treatment field, expectation by controlling the intensity of harmful light in the environment of living in, to carry out corresponding protection emergency measure, is for example smeared sunblock lotion on the spot, wears sunglasses, is used sunshade etc.
At the demand, had many ultraviolet sensor propositions that can be used to detect in the past.Say it for example, United States Patent (USP) discloses a kind of reusable individual light detection device No. 6271528, its utilization can be subjected to light activated fluorophor (photostimulable phosphor) as a storing media (storage medium), absorbing the incident ray medium wave band is 350 nanometers or following luminous energy, by a read routine, the luminous energy calculating that absorbs in the storing media is converted to relevant information (as ultraviolet dosage, ultraviolet index etc.), and is shown on the panel of this individual's light detection device.Yet this means, in order to know the harmful light beta radiation amount in the environment of living in, need carry this people's optical sensor, lacks the convenience on using.
United States Patent (USP) proposes a kind of portable information apparatus that shows uitraviolet intensity No. 6541775, it utilizes materials such as silit or III-th family to the V compounds of group as ultraviolet sensing element, and this sensing element is combined with portable apparatus (as mobile phone, personal digital assistant etc.); So, the carrier can know the uitraviolet intensity of place environment in real time by object of self originally just carrying.Yet the cost price of the material of its ultraviolet sensing element is comparatively expensive, and manufacturing process is comparatively loaded down with trivial details.
Summary of the invention
The present invention's first purpose is to provide a kind of display panel that need not use expensive material and can form Photosensing Units simultaneously in thin film transistor (TFT) technology, in order to measure the non-visible light wave band in the external environment, provide information in real time as ultraviolet ray, infrared ray isocandela degree.
Second purpose of the present invention is to provide an electrooptical device, comprises aforesaid display panel.
The 3rd purpose of the present invention is to provide a kind of driving method of aforesaid display panel.
The 4th purpose of the present invention is to provide a kind of manufacture method of aforesaid display panel.
The 5th purpose of the present invention is to provide a kind of manufacture method of electrooptical device as mentioned above.
For achieving the above object, the invention provides a kind of display panel, this panel comprises: one first substrate, and it comprises an active area and at least one neighboring area, this active area has a plurality of pixels, and respectively this pixel comprises at least one switching device that electrically connects with signal wire; One second substrate, corresponding, be overlapped in this active area of this first substrate and expose this neighboring area, and comprise one and share electrode; One dielectric coefficient layer is arranged between this first substrate and this second substrate; At least one first Photosensing Units is arranged on this neighboring area of this first substrate and by the semiconductor switching device and is constituted, in order to detect an all band that comprises the external environment light of visible light wave range and non-visible light wave band; At least one second Photosensing Units is arranged on this first substrate and by the semiconductor switching device and is constituted, in order to detect the visible light wave range of external environment light; And a light sensing circuit, be electrically connected at this first Photosensing Units and this second Photosensing Units, with the numerical value of the non-visible light wave band that obtains external environment light.
For achieving the above object, the invention provides an electrooptical device, comprise aforesaid display panel.
For achieving the above object, the invention provides a kind of driving method of aforesaid display panel, this method comprises: shine this first Photosensing Units and this second Photosensing Units of an external environment light on this panel, with the full wave numerical value that detects this external environment light and the numerical value of visible light wave range; And the numerical value that calculates this full wave numerical value and this visible light wave range, with the numerical value of a non-visible light wave band of obtaining this external environment light and be shown on this display panel.
And, for achieving the above object, the invention provides a kind of manufacture method of display panel, this method comprises:
One first substrate is provided, and it comprises an active area and at least one neighboring area, and this active area has a plurality of pixels, and respectively this pixel comprises at least one switching device that electrically connects with signal wire; One second substrate is provided, corresponding, be overlapped in this active area of this first substrate and expose this neighboring area, and comprise one and share electrode; One dielectric coefficient layer is set, between this first substrate and this second substrate; Be provided with at least the semiconductor switching device on this neighboring area on this first substrate as first Photosensing Units, in order to detect an all band that comprises the external environment light of visible light wave range and non-visible light wave band; Be provided with at least the semiconductor switching device on this first substrate as second Photosensing Units, in order to detect the visible light wave range of external environment light; And a light sensing circuit is provided, be electrically connected at this first Photosensing Units and this second Photosensing Units, with the numerical value of the non-visible light wave band that obtains external environment light.
And, for achieving the above object, the invention provides a kind of manufacture method of electrooptical device, comprise the manufacture method of aforesaid a kind of display panel.
Adopt the present invention, need not use expensive material just can in thin film transistor (TFT) technology, form Photosensing Units simultaneously,, provide information in real time as ultraviolet ray, infrared ray isocandela degree in order to measure the non-visible light wave band in the external environment.
Description of drawings
Fig. 1 is the synoptic diagram of a kind of concrete aspect of display panels of the present invention;
Fig. 2 A to Fig. 2 E is the vertical view of LCD of the present invention;
Fig. 3 is the synoptic diagram of concrete structure of the display panels of Fig. 1;
Fig. 4 is the equivalent circuit diagram of the structure of Fig. 3;
Fig. 5 A to Fig. 5 C is the vertical view of first substrate of display panels of the present invention;
Fig. 6 A and Fig. 6 B are the vertical views of first substrate of display panels of the present invention;
Fig. 7 is according to the process flow diagram of demonstration non-visible light wave band numerical value of the present invention on display panel; And
Fig. 8 is the synoptic diagram according to electrooptical device of the present invention.
Wherein, Reference numeral:
100: 110: the first substrates of display panels
111: pixel electrode 112: switching device
114: the second Photosensing Units of 113: the first Photosensing Units
115: 120: the second substrates of non-visible light wave band filtering layer
121: shared electrode 122: chromatic filter layer
123: black matrix" 116: electric capacity
130: liquid crystal 140: separation material
150: 160: the first Polarizers of sealing article
Polarizer 401 in 170: the second: sweep trace
402: data line 701: light sensing circuit
800: electrooptical device 801: display panel
802: electronic component 1121: grid
1122: gate insulator 1123: semiconductor layer
1124: source electrode 1125: drain electrode
A: active area B: neighboring area
Embodiment
Display panel of the present invention mainly is made of one first substrate, one second substrate and a dielectric coefficient layer, and the material of this dielectric coefficient layer comprises liquid crystal material, luminescent material, reaches aforesaid combination.Wherein, when the material of dielectric coefficient layer is luminescent material (for example fluorescence coating and/or phosphorescent layer), display panel of the present invention is an electric exciting light emitting display panel, and the material of luminescent layer comprises organic luminescent substance, luminous pigment, inorganic light-emitting material or other material or aforesaid combination.
When the material of this dielectric coefficient layer was liquid crystal material layer, display panel of the present invention was a display panels.When the material of this dielectric coefficient layer was liquid crystal material and luminescent material, what display panel of the present invention can claim was display panels, electric exciting light emitting display panel or combined type display panel (hybrid displaypanel).Below be that example illustrates the present invention now with the display panels.At first, please refer to Fig. 1, it illustrates the synoptic diagram according to display panels one concrete aspect of the present invention, display panels 100 is constituted by clamping one deck liquid crystal 130 in the middle of one first substrate 110 and one second substrate 120, comprise an active area A and a neighboring area B on first substrate 110, active area A has a plurality of pixels, each pixel comprises a pixel electrode 111 and switching device 112 (for simplicity, only showing a pixel among Fig. 1 to make illustration) at least one and that pixel electrode 111 electrically connects.In addition, switching device 112 electrically connects with signal wire (not drawing), and as the switch of pixel electrode 111, and signal wire comprises sweep trace and data line.Pixel electrode 111 is generally transparent material (as: indium-zinc oxide, the aluminium zinc oxide, the aluminium tin-oxide, the cadmium tin-oxide, cadmium zinc oxide Han oxide, indium tin oxide, or other material, or aforesaid combination), reflection material (as: gold, silver, copper, iron, tin, plumbous, cadmium, nickel, aluminium, titanium, tantalum, molybdenum, neodymium Han, tungsten, or other material, or aforesaid nitride, or aforesaid oxide, or aforesaid oxides of nitrogen, or aforesaid alloy, or aforesaid combination), or aforesaid combination.
Please continue with reference to figure 1, first substrate 110 and second substrate 120 are generally flexible base plate, for example: glass substrate, quartz base plate, plastic base (as: polycarbonate-based, poly-propionyl acids, poly-propionyl ester class, poly terephthalic acid class, polyester terephthalate class, polyalkenes, poly-halogen alkene class, polyethers, polyketone class or other material or aforesaid combination) or other material substrate or above-mentioned combination, the present invention is to be to implement example to illustrate with the glass substrate.Between this two substrates, be provided with a separation material 140, be generally silicide and/or organic resin material, in order to the interval between the control two substrates, in other words, with the thickness of control liquid crystal 130; In addition, other has a sealing article 150, so that liquid crystal 130 is sealed.In addition, display panels 100, preferably, also have one first polaroid 160 and be positioned at the below of first substrate 110 and the top that one second Polarizer 170 is positioned at second substrate 120, make the luminous energy that enters or penetrate this display panel advance according to specific direction, but be not limited thereto, also optionally be arranged on a certain substrate or be not provided with.In addition, the legend of Fig. 1 of the present invention is only to be positioned at the below of the active area A of first substrate 110 with first polaroid 160, but is not limited thereto, and also can be arranged at the below of the neighboring area B of the active area A of first substrate 110 and first substrate 110.
Then, further with reference to figure 3, it is the concrete structure of the active area A of the display panels 100 among Fig. 1.In the present invention, switching device 112 can be the thin film transistor (TFT) of a bottom gate type (comprising back of the body channel etch type, etch stop type or other kenel), top gate type or other kenel.Switching device 112 shown in Fig. 3 is that a bottom gate thin film transistor is an enforcement example of the present invention, and it comprises a grid 1121, a gate insulator 1122, semi-conductor layer 1123, one source pole 1124 and a drain electrode 1125.Wherein, grid 1121 can be the single or multiple lift structure, and its material can comprise gold, silver, copper, iron, tin, lead, cadmium, nickel, aluminium, titanium, tantalum, molybdenum, Nv, Han, tungsten or other material or aforesaid nitride or aforesaid oxide or aforesaid oxides of nitrogen or aforesaid alloy or aforesaid combination; Source electrode 1124 and 1125 the material of draining are general identical in fact with the material of grid 1121, but also can be different in essence; As for semiconductor layer 1123, it can comprise siliceous polycrystalline material, siliceous amorphous material, siliceous monocrystalline material, siliceous crystallite material, germanic aforementioned lattice material, contain the aforementioned lattice material of arsenic or aforesaidly carefully close.In addition, but semiconductor layer 1123 single or multiple lift settings do not comprise the semiconductor layer of the son that mixes or comprise the semiconductor layer of the son that mixes.If during individual layer, optionally use and use the two combination of semiconductor layer, the semiconductor layer that comprises highly doped sub-concentration that does not comprise the son that mixes, the semiconductor layer that comprises low-doped sub-concentration or aforementioned respectively, and its arrangement can be in fact homeotropic alignment, in fact horizontally or aforesaid combination; If during multilayer, optionally use the two combination of semiconductor layer, the semiconductor layer that comprises highly doped sub-concentration do not comprise the son that mixes, the semiconductor layer that comprises low-doped sub-concentration or aforementioned respectively, and its arrangement can be in fact homeotropic alignment, in fact horizontally or aforesaid combination.In addition; the described switching device of Fig. 3 is not comprise protective seam (not shown); gate insulator 1122 cover gate 1121; and pixel electrode 111 is formed on first substrate 110 earlier; electrically connect to implementing example with follow-up drain electrode 1125 again; but be not limited thereto; also optionally form described switching device and comprise protective seam; gate insulator 1122 cover gate 1121 and first substrate 110; after the source electrode 1124 and 1125 formation earlier that drain, form pixel electrode again and be electrically connected at drain electrode 1125; or alternate manner; or above-mentioned any one combination (aforementioned selectivity aspect all is not illustrated among the figure).If; switching device comprises protective seam; then protective seam and gate pole insulation course 1122 wherein at least one material comprise inorganic (as: silicon nitride; monox; silicon oxynitride; the fluorine silex glass; silit; or other material; or aforesaid combination); organic material (as: photoresistance; polyimide; polyacrylic; the poly aromatic same clan; the polyaromatic esters of acrylic acid; polyesters; poly-epoxies; the benzocyclobutene class; or other material; or aforesaid combination); or aforesaid combination; and wherein at least one optionally is a single or multiple lift for protective seam and gate pole insulation course 1122; and when multilayer, the material of each layer can be identical or different in fact.
Then, merge, the driving mechanism of switching device 112 further is described with the equivalent circuit diagram of single pixel with reference to figure 4.Wherein, transmit the one scan signal through sweep trace 401 and give grid 1121, and transmit a data-signal through data line 402 and give source electrode 1124, and pass through the operation principles of semiconductor layer 1123, make switching device 112 be opening, and signal is passed to pixel electrode 111 via drain electrode 1125.Thereby, can provide an electric field in pixel electrode 111 and 121 of shared electrode, make liquid crystal 130 turn to and then make light to pass through and arrive on second substrate.In this, also can optionally comprise at least one electric capacity (being Fig. 3 and shown in Figure 4 116) on first base material 110, form a circuit in parallel to be positioned at pixel electrode with the liquid crystal capacitance (not indicating) that shared electrode 121 is constituted with liquid crystal 130, reduce that switching device 112 closes by opening and/or by the variation of closing caused pixel voltage when opening, thereby improve the retention performance of liquid crystal 130.And the framework of electric capacity 116 is established a dielectric layer (not shown) in wherein constituting by top electrode and bottom electrode folder, generally speaking, the part metal level that top electrode can be pixel electrode and/or composition data line constitutes, and bottom electrode can be the part common lines and/or the part sweep trace constitutes.Dielectric layer one of comprises what follows at least, as: gate insulator, protective seam, inner layer dielectric layer and semiconductor layer.
Continuation comprises a chromatic filter layer 122 and a black matrix" 123 in addition with reference to figure 3, the second substrates 120, and shared electrode 121 covers chromatic filter layer 122 and black matrix" 123; In this, a protective seam (not drawing) be can optionally comprise in addition and chromatic filter layer 122 and black matrix" 123 coated earlier, cover this protective seam with shared electrode 121 again.Chromatic filter layer 122 is made up of three colors of red, green, blue, suitably control the amount that light passes through via liquid crystal 130, pass through chromatic filter layer 122 and the adjustable shades of colour of allotting, show to reach full color, but be not limited thereto, also optionally be other color on the chromaticity coordinates, as: pink, purple, white (promptly colourless), yellow, viridescent, magenta, brown or other color; Black matrix" 123 has the function that the raising contrast prevents that light leak and prevention photocurrent from producing, and its material is generally metallic material film (for example chromium, nickel, aluminium, molybdenum, tungsten, neodymium or other material or aforesaid combination), nonmetallic materials (as black resin, multilayer color layer storehouse, black pigment or other material or aforesaid combination) or aforesaid combination.In this, chromatic filter layer 122 can optionally lay respectively on first substrate 110 or second substrate 120, and black matrix" 123 also can optionally lay respectively on first substrate 110 and/or second substrate 120.Say it for example, when chromatic filter layer 122 is positioned on first substrate 110, its can be formed on the switching device 112 (being called for short the COA type) or under the form of (being called for short the AOC type), and black matrix" 123 can be formed on first substrate 110 and/or on second substrate 120.
Then, consult Fig. 1 again, have one first Photosensing Units 113 and one second Photosensing Units 114 on the neighboring area B of first substrate 110, implement to have a non-visible light wave band filtering layer 115 on second Photosensing Units 114 under the aspect (promptly second Photosensing Units 114 is positioned on the B of neighboring area) in this.The material of this non-visible light wave band filtering layer 115 comprises an electrically conducting transparent material, a predetermined material layer or aforesaid combination, preferable serves as to implement example with an electrically conducting transparent material, for example: indium-zinc oxide, aluminium zinc oxide, aluminium tin-oxide, cadmium tin-oxide, cadmium zinc oxide, Han oxide, indium tin oxide or other material or aforesaid combination; This predetermined material layer comprises a dielectric layer (as protective seam, gate insulator, inner layer dielectric layer or aforesaid combination), and has the two combination of dielectric coefficient layer, a chromatic filter layer, a base material or aforesaid.In specific words, this first Photosensing Units 113 comprises all band of the external environment light of visible light wave range and non-visible light wave band in order to detection, and this second Photosensing Units 114 is in order to detect the visible light wave range of external environment light; Other has a light sensing circuit (not shown) to be electrically connected at first Photosensing Units 113 and second Photosensing Units 114, with the numerical value of the non-visible light wave band that obtains external environment light.The numerical value of this non-visible light wave band comprises ultraviolet numerical value, infrared ray numerical value or aforesaid combination.Say it for example, when non-visible light wave band filtering layer 115 can filter out the ultraviolet light wave band (when for example being an indium tin oxide layer), the Photosensing Units in the display panel of the present invention can provide ultraviolet relevant information in order to detect ultraviolet light; When it can filter out infrared band, then can provide the infrared ray relevant information in order to detect infrared light.
As mentioned above, first Photosensing Units 113 and second Photosensing Units 114 can be adjacent to be disposed on the neighboring area B of first substrate 110, shown in Fig. 5 A.Fig. 5 A shows the vertical view of first substrate 110, and the shaped as frame that neighboring area B is shown in Fig. 2 E is example, so only demonstrate the non-visible light wave band filtering layer 115 that covers second Photosensing Units 114 (Fig. 5 B hereinafter and Fig. 5 C situation also with).In addition, the number of described first Photosensing Units 113 of Fig. 5 A and second Photosensing Units 114 can be one or more (as: 2,3,4,5,6 or the like), and the number of the two can be identical or different.In addition, first Photosensing Units 113 and second Photosensing Units 114 on first substrate 110 might not be adjacent to fit together, and also can at random be arranged on the appropriate location of neighboring area B, shown in Fig. 5 B.In addition, also can optionally comprise at least one first Photosensing Units 113 and at least one second Photosensing Units 114 on the B of neighboring area, (can adjacent in twos each other or irregularly arrange) can optionally be arranged in its position, shown in Fig. 5 C.In addition, the number of described first Photosensing Units 113 of Fig. 5 B and/or Fig. 5 C and second Photosensing Units 114 can be one or more, and the number of the two can be identical or different.
According to the present invention, second Photosensing Units 114 also can be positioned on the active area A of first substrate 110.As shown in Figure 6A, at least one first Photosensing Units 113 is positioned on the B of neighboring area, and at least one second Photosensing Units 114 is positioned at the non-pixel region of active area A; In in the case, because of second substrate 120 contains the material that can filter the non-visible light wave band, the shared electrode 121 of indium tin oxide for example is so second Photosensing Units 114 need not comprise a non-visible light wave band filtering layer 115; So, still do not get rid of in this aspect of non-visible light wave band filtering layer 115 on second Photosensing Units 114 is provided.Perhaps, this second Photosensing Units 114 is positioned at the pixel region of at least one part of active area A, and is located in the pixel with switching device 112 1, shown in Fig. 6 B.In addition, the number of described first Photosensing Units 113 of Fig. 6 A and/or Fig. 6 B and second Photosensing Units 114 can be one or more, and the number of the two can be identical or different.In addition, described second Photosensing Units 114 of Fig. 6 A and/or Fig. 6 B is all to be provided with 112 out of the ordinary separations of switching device, also optionally the two the adjacent together setting or second Photosensing Units 114 are used as switching device 112 uses, and also promptly second Photosensing Units 114 has light sensing function and control function.
According to the present invention, first Photosensing Units 113 and second Photosensing Units 114 are by the semiconductor switching device, and for example thin-film transistor structure constitutes, and its form and contained each layer structure, material are described about switching device 112 as mentioned, repeat no more in this.Preferably, first Photosensing Units 113 and second Photosensing Units 114 have identical form, structure with switching device 112.Say it for example, can utilize thin film transistor (TFT) array technology, form switching device 112 with bottom gate thin film transistor structure, first Photosensing Units 113, and second Photosensing Units 114 together, but be not limited thereto, first Photosensing Units 113 and second Photosensing Units 114 wherein at least one and switching device 112 optionally have form and/or the structure that is different in essence.
Light sensing circuit in the display panel of the present invention, be electrically connected at first Photosensing Units 113 and second Photosensing Units 114, it comprises at least one processing unit, for example comparative device, totalizer, divider, integrator, differentiator or multiplier, with will be from all band numerical value of boundary's surround lighting outside first Photosensing Units 113 and numerical value, through after converting institute desire numerical value being shown on the panel from the non-visible light wave band of the external environment light of second Photosensing Units 114.According to of the present invention one concrete aspect, as shown in Figure 7, light sensing circuit 701 is preferable comprise at least following the two, as at least one amplifier (comprise at least wherein, as signal amplifier, voltage amplifier or current amplifier), at least one converter (comprising that analog-converted is numeral, digital conversion and is simulation for numeral or analog-converted for simulation, digital conversion), at least one processing unit or other element.Say it for example, when external environment light produced an incident ray and shines first Photosensing Units 113 and second Photosensing Units 114, it can be along with light intensity produces corresponding photocurrent, and it is generally the fainter photocurrent of intensity.For conveniently carrying out follow-up signal Processing, earlier the photocurrent that is produced is handled by amplifier, again the gained amplified current is passed through an analog-digital converter, be converted to a digital signal, thereafter with the digital signal process processing unit processes of being changed, the numerical value that acquisition is desired, for example uitraviolet intensity, ultraviolet index, infra-red intensity, infrared ray index etc., provide and give panel controller, be shown at last on this panel.Wherein, amplifier, processing unit and converter be at least one number wherein, is not limited to 1, can optionally be a plurality of according to the differentiation of designing requirement and/or function also.
Therefore, the present invention provides a kind of driving method of aforesaid display panel in addition, comprise and make this first Photosensing Units and this second Photosensing Units of an external environment rayed on this panel, with all band numerical value and the visible light wave range numerical value that detects external environment light respectively; Then calculate this numerical value,, and be shown on this display panel with the numerical value of the non-visible light wave band of obtaining this external environment light.
In general, by the utilization of a light sensing circuit, the numerical value of the non-visible light wave band in the external environment light can be converted into institute's desire information (for example non-visible light index), so that the user to be provided the non-visible light intensity about environment of living in; Even, this numerical value can be converted to the information or the aforesaid combination of hommization.Say it for example, a configurable signal lamp on the display panel when ultraviolet index during still in safe range, gives a green light signal lamp; When in the alert news scope, make its bright orange lamp; And when at risk range, it is sent out a warning.Perhaps, use color bar/color blocks/chromaticity diagram to represent.Perhaps, use the sound rapid and/or size or, use the rapid and/or big or small of vibration.Perhaps, alternate manner.Perhaps, aforesaid combination.Certainly, the color of cresset, color bar, color blocks or chromaticity diagram also can adopt the color on the above-mentioned described chromaticity coordinates.
Below with the step of preparation display panel example of the present invention, further specify the manufacture method of display panel of the present invention.According to the inventive method, comprise and carry out semiconductor switching device technology, so that one first substrate to be provided, this first substrate comprises an active area and at least one neighboring area, this active area has a plurality of pixels, and respectively this pixel comprises at least one switching device that electrically connects with signal wire.Say it for example, be example, comprise as the step 1 of preparation the present invention first substrate: on this glass substrate, define predetermined active area and predetermined neighboring area to use glass substrate and thin film transistor (TFT) array technology; On the predetermined active area and/or predetermined neighboring area of this glass substrate, form a grid layer, this grid layer 1121 of patterning, forming a gate insulator 1122 (for example can be by the mode of plasma enhanced chemical vapor deposition, but be not limited thereto mode), forming semi-conductor layer 1123 (for example can be by the mode of plasma enhanced chemical vapor deposition, but be not limited thereto mode), this semiconductor layer of patterning, form one source/drain electrode layer and (for example can pass through the sputter-deposited mode, but be not limited thereto mode), and this source/drain electrode layer of patterning, to form a plurality of thin film transistor (TFT)s that are positioned at active area (as switching device and Photosensing Units optionally) and at least one is positioned at the semiconductor switching device (as Photosensing Units) of neighboring area B; At last, form a patterning pixel electrode, to obtain the first used substrate of the present invention.Mandatory declaration, the preparation method of the present invention's first substrate also can form before the patterning pixel electrode, can first overlay pattern protective seam on first substrate.In addition, do not exceed, can other any suitable mode be prepared, for example: ink-jetting style, mode of printing, alternate manner or aforesaid combination with said method.In addition, the preparation method of aforementioned first substrate is formed with five road gold-tinteds and etch process, also be not limited thereto, also can three road gold-tinteds and etch process, four road gold-tinteds and etch process, six road gold-tinteds and etch process, seven road gold-tinteds and etch process and eight road gold-tinteds and etch process or the like.
Preparation in accordance with the present invention can form switching device and Photosensing Units in the lump in the step of making first substrate 110.In this, based on the consideration on process convenience and the cost, in a preferred aspect of the inventive method, this switching device has identical structure with first Photosensing Units and second Photosensing Units.Certainly, this switching device and first Photosensing Units and second Photosensing Units wherein at least one, also can have the structure that is different in essence.Further it, when forming a semiconductor switching device, as thin film transistor (TFT) when the neighboring area B of first substrate 110, it is as first Photosensing Units, and a semiconductor switching device that is positioned at active area A, be not electrical connected and as second Photosensing Units, its surface can optionally cover non-visible light wave band filtering layer as thin film transistor (TFT) with signal wire; When forming two semiconductor switching devices (as thin film transistor (TFT)) in the neighboring area, one of them is as first Photosensing Units, and another is as second Photosensing Units, and provides a non-visible light wave band filtering layer on this second Photosensing Units.According to above-mentioned rule, can optionally arrange the quantity of first Photosensing Units 113 and the position and the quantity of second Photosensing Units 114.In addition, also can form according to circumstances be different from the switching device structure Photosensing Units on first base material.
Then, carry out the preparation of second substrate 120, this second substrate comprises one and shares electrode 121.To use glass substrate and color filter technology to be example, on this glass substrate, provide a patterning black matrix" 123; Then coat on this base material, utilize lithography process again, form red pattern with the red material that will be scattered in as the rotary coating mode in the sensing optical activity resin; Carry out this coating and lithography process more repeatedly, forming green pattern and blue pattern, but be not limited to aforementioned manner, also can other any suitable mode be prepared, for example: ink-jetting style, mode of printing, alternate manner or aforesaid combination; Again shared electrode 121 is formed at last on the gained color layer and (for example by the vacuum splashing and plating mode, but is not limited thereto mode, can other any suitable mode be prepared, for example: ink-jetting style, mode of printing, alternate manner or aforesaid combination).Must illustrate that the preparation method of the present invention's second substrate is not exceeded with said method, can other any suitable mode be prepared.
One liquid crystal layer 130 then is set between this first substrate 110 and this second substrate 120, and use sealing article 150 with sealing liquid crystal between this two substrates, and provide two Polarizers 160,170 to be disposed at the below of first substrate 110 and the top of second substrate 120 respectively; Wherein, as indicated above, when making up this first substrate 110 with this second substrate 120, this second substrate is correspondence, is overlapped in this active area A of this first substrate 110 and exposes this neighboring area B.At last, add a light sensing circuit 701, be electrical connected first Photosensing Units 113 and second Photosensing Units 114 on first substrate 110 can obtain display panel of the present invention.Perhaps optionally, can directly light sensing circuit 701 be formed on the display panel, and be electrical connected with first Photosensing Units 113 and second Photosensing Units 114 by suitable technology.
In addition, when the aforementioned lights sensing element is formed on the B of neighboring area, preferably also can forms at least one overlayer (not shown) and be covered on the part aforementioned lights sensing element, not be subjected to the influence of environment with protection aforementioned lights sensing element.Wherein, overlayer can be the single or multiple lift structure, and it comprises organic material, inorganic material or above-mentioned combination.Preferably, overlayer is not interfered all band of aforementioned lights sensing element ambient light and the visible light wave range of surround lighting.
Again, aforesaid first Photosensing Units 113 of the present invention is to be example to be arranged on the B of neighboring area, but be not limited thereto, also can be arranged in the active area A, then first Photosensing Units, 113 tops will not exist any full wave rete that can influence ambient light to exist this moment.
As mentioned above, the invention provides a kind of preparation method who has the display panel of Photosensing Units comparatively easily, the preparation procedure that it exempts the Photosensing Units that in the past need additionally carry out also need not to use plug-in element as Photosensing Units.
Fig. 8 shows the synoptic diagram of the present invention's one electrooptical device 800.As shown in Figure 8, can be combined into an electrooptical device 800 with electronic component 802 electrical connections by the described display panel 801 of the foregoing description.Electronic component 802 comprises as control element, executive component, treatment element, input element, memory element, driving element, light-emitting component, protecting component, sensing element, detecting element or other function element or aforesaid combination.And the type of electrooptical device comprises the panel in portable product (as mobile phone, video camera, camera, mobile computer, game machine, wrist-watch, music player, electronic mail transceiver, map navigator, digital photo or similar products like), video and audio product (as audio-visual projector or similar products like), screen, TV, billboard, the projector etc.In addition, if the display panel of the above embodiment of the present invention is a display panels, then classify, comprise penetrating type with at least one of the kenel of the kenel of its pixel electrode and liquid crystal molecule, semi penetration type, reflection-type, vertical orientation type (VA), horizontal switch type (IPS), multi-domain perpendicular alignment-type (MVA), twisted nematic (TN), super-twist nematic (STN), pattern vertical orientation type (PVA), super pattern vertical orientation type (S-PVA), the advanced person is type (ASV) with great visual angle, fringe field switch type (FFS), continuous fireworks shape arrange type (CPA), rotational symmetry is arranged micella type (ASM), optical compensation curved arrange type (OCB), super horizontal switch type (S-IPS), advanced super horizontal switch type (AS-IPS), extreme edge electric field switch type (UFFS), the stabilizing polymer alignment-type, double vision angle type (dual-view), three visual angle types (triple-view), or other profile plate, or aforesaid combination.If the display panel of the above embodiment of the present invention is an electric exciting light emitting display panel, then be categorized as organic electric-excitation luminescent displaying panel, inorganic electroluminescence display panel or above-mentioned combination with its dielectric coefficient layer.And the preparation method of this electrooptical device comprises the preparation method of aforesaid display panel, again according to the preparation procedure of various electrooptical devices and assemble the gained display panel, to obtain this electrooptical device.
Certainly; the present invention also can have other various embodiments; under the situation that does not deviate from spirit of the present invention and essence thereof; being familiar with those of ordinary skill in the art ought can make various corresponding changes and distortion according to the present invention, but these corresponding changes and distortion all should belong to the protection domain of the appended claim of the present invention.
Claims (29)
1, a kind of display panel is characterized in that, comprises:
One first substrate, it comprises an active area and at least one neighboring area, and this active area has a plurality of pixels, and respectively this pixel comprises at least one switching device that electrically connects with signal wire;
One second substrate, corresponding, be overlapped in this active area of this first substrate and expose this neighboring area, and comprise one and share electrode;
One dielectric coefficient layer is arranged between this first substrate and this second substrate;
At least one first Photosensing Units is arranged on this neighboring area of this first substrate and by the semiconductor switching device and is constituted, in order to detect an all band that comprises the external environment light of visible light wave range and non-visible light wave band;
At least one second Photosensing Units is arranged on this first substrate and by the semiconductor switching device and is constituted, in order to detect the visible light wave range of external environment light; And
One light sensing circuit is electrically connected at this first Photosensing Units and this second Photosensing Units, with the numerical value of the non-visible light wave band that obtains external environment light.
2, panel according to claim 1 is characterized in that, this second Photosensing Units is arranged on this active area of this first substrate.
3, panel according to claim 1 is characterized in that, this second Photosensing Units is arranged on this neighboring area of this first substrate.
4, panel according to claim 2 is characterized in that, this second Photosensing Units is coated with at least one non-visible light wave band filtering layer on it.
5, panel according to claim 3 is characterized in that, this second Photosensing Units is coated with at least one non-visible light wave band filtering layer on it.
6, panel according to claim 1 is characterized in that, also comprises a chromatic filter layer, is arranged at wherein on of this first substrate and this second substrate.
7, panel according to claim 6 is characterized in that, also comprises a black matrix", is arranged at wherein on of this first substrate and this second substrate.
8, panel according to claim 4 is characterized in that, the material of this non-visible light wave band filtering layer comprises an electrically conducting transparent material, a predetermined material layer or aforesaid combination.
9, panel according to claim 5 is characterized in that, the material of this non-visible light wave band filtering layer comprises an electrically conducting transparent material, a predetermined material layer or aforesaid combination.
10, panel according to claim 1 is characterized in that, other comprises two polaroids, is arranged at the lower surface of this first substrate and the upper surface of this second substrate respectively.
11, panel according to claim 1 is characterized in that, this light sensing circuit comprises at least one processing unit.
12, panel according to claim 1 is characterized in that, this light sensing circuit comprise at least one amplifier and at least one converter wherein at least one.
13, panel according to claim 1 is characterized in that, the numerical value of this non-visible light wave band comprises ultraviolet numerical value, infrared ray numerical value or aforesaid combination.
14, a kind of electrooptical device comprises the described display panel of claim 1.
15, a kind of driving method of display panel, this display panel comprise one first substrate, and it comprises an active area and at least one neighboring area, and this active area has a plurality of pixels, and respectively this pixel comprises at least one switching device that electrically connects with signal wire; One second substrate, corresponding, be overlapped in this active area of this first substrate and expose this neighboring area, and comprise one and share electrode; One dielectric coefficient layer is arranged between this first substrate and this second substrate; At least one first Photosensing Units is arranged on this neighboring area of this first substrate and by the semiconductor switching device and is constituted, in order to detect an all band that comprises the external environment light of visible light wave range and non-visible light wave band; At least one second Photosensing Units is arranged on this first substrate and by the semiconductor switching device and is constituted, in order to detect the visible light wave range of external environment light; And a light sensing circuit, be electrically connected at this first Photosensing Units and this second Photosensing Units, it is characterized in that this method comprises:
Shine this first Photosensing Units and this second Photosensing Units of an external environment light on this panel, with the full wave numerical value that detects this external environment light and the numerical value of visible light wave range; And
Calculate the numerical value of this full wave numerical value and this visible light wave range, with the numerical value of a non-visible light wave band of obtaining this external environment light and be shown on this display panel.
16, a kind of manufacture method of display panel is characterized in that, comprises:
One first substrate is provided, and it comprises an active area and at least one neighboring area, and this active area has a plurality of pixels, and respectively this pixel comprises at least one switching device that electrically connects with signal wire;
One second substrate is provided, corresponding, be overlapped in this active area of this first substrate and expose this neighboring area, and comprise one and share electrode;
One dielectric coefficient layer is set, between this first substrate and this second substrate;
Be provided with at least the semiconductor switching device on this neighboring area on this first substrate as first Photosensing Units, in order to detect an all band that comprises the external environment light of visible light wave range and non-visible light wave band;
Be provided with at least the semiconductor switching device on this first substrate as second Photosensing Units, in order to detect the visible light wave range of external environment light; And
One light sensing circuit is provided, is electrically connected at this first Photosensing Units and this second Photosensing Units, with the numerical value of the non-visible light wave band that obtains external environment light.
17, method according to claim 16 is characterized in that, this second Photosensing Units is arranged on this active area of this first substrate.
18, method according to claim 16 is characterized in that, this second Photosensing Units is arranged on this neighboring area of this first substrate.
19, method according to claim 17 is characterized in that, is coated with at least one non-visible light wave band filtering layer on this second Photosensing Units.
20, method according to claim 18 is characterized in that, is coated with at least one non-visible light wave band filtering layer on this second Photosensing Units.
21, method according to claim 16 is characterized in that, also comprises a chromatic filter layer is set, on this first substrate or this second substrate.
22, method according to claim 21 is characterized in that, also comprises a black matrix" is set, on this first substrate or this second substrate.
23, method according to claim 19 is characterized in that, the material of this non-visible light wave band filtering layer comprises an electrically conducting transparent material, a predetermined material layer or aforesaid combination.
24, method according to claim 20 is characterized in that, the material of this non-visible light wave band filtering layer comprises an electrically conducting transparent material, a predetermined material layer or aforesaid combination.
25, method according to claim 16 is characterized in that, other is contained in the lower surface of this first substrate and the upper surface of this second substrate respectively is provided with a polaroid.
26, method according to claim 16 is characterized in that, this light sensing circuit comprises at least one processing unit.
27, method according to claim 16 is characterized in that, this light sensing circuit comprise at least one amplifier and at least one converter wherein at least one.
28, method according to claim 16 is characterized in that, the numerical value of this non-visible light wave band comprises ultraviolet numerical value, infrared ray numerical value or aforesaid combination.
29, a kind of manufacture method of electrooptical device comprises the described method of claim 16.
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| CNB2007101376746A CN100462780C (en) | 2007-07-31 | 2007-07-31 | Display panel, photoelectric device containing same and drive method and manufacture method |
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| CNB2007101376746A CN100462780C (en) | 2007-07-31 | 2007-07-31 | Display panel, photoelectric device containing same and drive method and manufacture method |
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| CN101086566A true CN101086566A (en) | 2007-12-12 |
| CN100462780C CN100462780C (en) | 2009-02-18 |
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| CN101788338A (en) * | 2009-01-23 | 2010-07-28 | 统宝光电股份有限公司 | Portable uv monitoring device |
| US8188441B2 (en) | 2008-05-30 | 2012-05-29 | Au Optronics Corporation | Ultraviolet intensity detecting method, fabricating display apparatus method and display apparatus using the same |
| CN102576164A (en) * | 2009-09-09 | 2012-07-11 | 夏普株式会社 | Light sensor and display device |
| CN101762899B (en) * | 2008-12-25 | 2012-08-01 | 索尼株式会社 | Display panel, module, and electronic device |
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Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0892283A1 (en) * | 1997-07-14 | 1999-01-20 | Agfa-Gevaert N.V. | Reusable personal "sun-monitor" |
| JP2001320451A (en) * | 2000-05-10 | 2001-11-16 | Fuji Xerox Co Ltd | Mobile information apparatus |
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| JP2005070132A (en) * | 2003-08-27 | 2005-03-17 | Citizen Watch Co Ltd | Display unit |
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| CN100419534C (en) * | 2003-12-08 | 2008-09-17 | 索尼株式会社 | Liquid crystal display and backlight adjusting method |
| CN1699936A (en) * | 2004-05-21 | 2005-11-23 | 三洋电机株式会社 | Light quantity detection circuit and display panel using the same |
| JP2005345286A (en) * | 2004-06-03 | 2005-12-15 | Seiko Epson Corp | Optical sensor, optical sensor output processing method, display device and electronic equipment |
| JP2007141799A (en) * | 2005-11-22 | 2007-06-07 | Nec Lcd Technologies Ltd | Surface lighting light source, luminance correction circuit and luminance correction method used for surface lighting light source |
-
2007
- 2007-07-31 CN CNB2007101376746A patent/CN100462780C/en active Active
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| US8188441B2 (en) | 2008-05-30 | 2012-05-29 | Au Optronics Corporation | Ultraviolet intensity detecting method, fabricating display apparatus method and display apparatus using the same |
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| CN101788338A (en) * | 2009-01-23 | 2010-07-28 | 统宝光电股份有限公司 | Portable uv monitoring device |
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