CN101076892A - Power module, manufacturing method therefor, and air conditioner - Google Patents
Power module, manufacturing method therefor, and air conditioner Download PDFInfo
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- CN101076892A CN101076892A CNA2005800424192A CN200580042419A CN101076892A CN 101076892 A CN101076892 A CN 101076892A CN A2005800424192 A CNA2005800424192 A CN A2005800424192A CN 200580042419 A CN200580042419 A CN 200580042419A CN 101076892 A CN101076892 A CN 101076892A
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- power model
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Cooling Or The Like Of Electrical Apparatus (AREA)
Abstract
Disclosed is a power module which can be produced at low cost. Specifically disclosed is a power module (5, 5A, 5B, 5C, 5D, 5E, 5F) comprising a power semiconductor (53a), a non-power semiconductor (53b), a resin substrate (51, 51A, 51B, 51C, 51D, 51E, 51F) and a cooling means (59, 59A). The power semiconductor and the non-power semiconductor constitute a power supply circuit for performing power conversion. Both the power semiconductor and the non-power semiconductor are mounted on the resin substrate, and the cooling means is arranged for cooling the power semiconductor.
Description
Technical field
The present invention relates to a kind of power model (power module) and manufacture method thereof of carrying out power conversions.In addition, the present invention also relates to a kind of air conditioner that is equipped with power model.
Background technology
Generally, power model mainly is made of following part: the power semiconductor installation base plate that the bigger chip of heating such as power semiconductor is installed; The non-power semiconductor mounting substrate of the smaller IC chip of heating such as microcomputer is installed; And be mainly used in the semi-conductive cooling end of cooling power (for example fin etc.) (for example with reference to patent documentation 1).
Patent documentation 1: TOHKEMY 2004-111619 communique
But, usually,,, adopt the substrate of aluminum or the substrate of ceramic etc. with high-termal conductivity owing to need to shed the system outside by the big calorimetric that power semiconductor produces as the power semiconductor installation base plate.On the other hand, as the non-power semiconductor mounting substrate,, adopt the so resinous substrate of glass reinforced epoxy etc. because the big semiconductor of caloric value as power semiconductor is not installed.Usually, the installation base plate of aluminum or ceramic etc. is than resinous installation base plate costliness, and this is the main cause that causes the cost rising of power model.The labor cost when in addition, on these two kinds of installation base plates, being installed separately power semiconductor and non-power semiconductor and causing making power model and the increase of cost of equipment.
Summary of the invention
Problem of the present invention is to provide a kind of power model that can suppress manufacturing cost lower.
The power model of the present invention the 1st aspect possesses power semiconductor, non-power semiconductor, resin substrate and cooling unit.In addition, said here " power semiconductor " for example is diode and power transistor etc.In addition, said here " non-power semiconductor " for example is microcomputer and ROM (Read Only Memory: read-only memory) etc.In addition, here said " resin substrate " for example be only with the substrate of resin manufacture, with the substrate of fiber-reinforced plastic manufacturing and other by substrate of the resin manufacture that is dispersed with powder etc. etc., and be at least at single face or be formed with the substrate of circuit pattern in inside.By the way, in this resin substrate, particularly preferably be the two sides resin substrate that is formed with circuit pattern on the two sides and a plurality of circuit and insulating barrier (resin bed) at alternately stacked stacked resin substrate of thickness of slab direction etc.Power semiconductor and non-power semiconductor are configured for carrying out the power circuit of power conversions.On resin substrate, be equipped with power semiconductor and non-power semiconductor the two.Cooling unit is provided with for the cooling power semiconductor.
In the power model of the type that the heat that power semiconductor produced is discharged by fin, usually by supplying to fin, the heat that power semiconductor produced is discharged to the system outside of power model with temperature or than the wind that this temperature exceeds tens degrees centigrade temperature.Under the situation that adopts this heat dissipating method, in power model,,, need aluminium base or ceramic substrate etc. to have the substrate of high-termal conductivity as being used for the semi-conductive substrate of installation power in order to ensure sufficient thermal diffusivity.
But, in the cooling unit of power model of the present invention, if the coolant that utilizes temperature for example to be lower than typical temperature (can be a gas, also can be liquid) etc., even then adopt the installation base plate of the resin substrate of low heat conductivity, also can fully the heat that power semiconductor produced be discharged from power model as power semiconductor.Certainly, the temperature of coolant at this moment need suitably change according to the heat that power semiconductor produced or the thickness of resin substrate.Under such prerequisite, in this power model, can be installed in power semiconductor and non-power semiconductor on the resin substrate.Therefore, in this power model,, do not need to adopt expensive aluminium base or ceramic substrate etc. as being used for the semi-conductive substrate of installation power.Consequently, when making this power model, can cut down cost of material, labor cost and the cost of equipment etc. of base material.Therefore, this power model can be made with low manufacturing cost.
The power model of the present invention the 2nd aspect forms, and in the power model aspect the present invention the 1st, cooling unit is a cooling fluid pathways.This cooling fluid pathways passes through cooling fluid.In addition, said here " cooling fluid " is the fluid that is used to make the power semiconductor cooling, for example is air and other gas or water and other liquid type (for example enclose in the refrigerant loop of refrigerating plant cold-producing medium etc.).In addition, this cooling fluid pathways is configured in the power semiconductor of resin substrate and the opposition side of the semi-conductive installed surface of non-power.In addition, it is poor that said here " installed surface " also can have ladder.
In this power model, the heat that power semiconductor produced is discharged to the system outside of power model by the cooling fluid of the cooling fluid pathways of flowing through.Therefore, in this power model,,, also the heat that power semiconductor produced can be discharged from power model fully even then adopt the installation base plate of the resin substrate of low heat conductivity as power semiconductor if cooling fluid maintains suitable temperature.In addition, under situation about this power model being equipped in the air conditioner, as cooling fluid, can utilize the cold-producing medium of the refrigerant loop of flowing through, be very economical.
The power model of the present invention the 3rd aspect forms, and in the power model aspect the present invention the 2nd, cooling fluid pathways is arranged on the inside of resin substrate.
In this power model, cooling fluid pathways is arranged on the inside of resin substrate.Therefore, in this power model, can shorten the distance of cooling fluid pathways and power semiconductor.Thereby, in this power model, can more efficiently the heat that power semiconductor produced be discharged to the system outside of power model.
The power model of the present invention the 4th aspect forms, and aspect the present invention the 2nd or in the power model of the 3rd aspect, also possesses temperature detecting unit and temperature control unit.Temperature detecting unit detection power semiconductor or near the temperature it.Temperature control unit is controlled the temperature of cooling fluid, so that the temperature that detects in the temperature detecting unit becomes predetermined temperature.
In this power model, temperature detecting unit detection power semiconductor or near the temperature it.In addition, temperature control unit is controlled the temperature of cooling fluid, so that the temperature that detects in the temperature detecting unit becomes predetermined temperature.Therefore, in this power model, can suitably keep the temperature of cooling fluid.
The power model of the present invention the 5th aspect forms, and to arbitrary power model of the 4th aspect, the beeline between power semiconductor and the cooling fluid pathways is shorter than the beeline between non-power semiconductor and the cooling fluid pathways aspect the present invention the 2nd.
In this power model, the beeline between power semiconductor and the cooling fluid pathways is shorter than the beeline between non-power semiconductor and the cooling fluid pathways.Therefore, in this power model, compare, the heat that power semiconductor produced can be discharged to more efficiently the system outside of power model with the heat that produces by the non-power semiconductor.
The power model of the present invention the 6th aspect forms, and to arbitrary power model of the 5th aspect, the thickness of the semi-conductive part of installation power is than the thin thickness that the semi-conductive part of non-power is installed in the resin substrate aspect the present invention the 1st.
In this power model, the thickness of the semi-conductive part of installation power is than the thin thickness that the semi-conductive part of non-power is installed in the resin substrate.Therefore, in this power model, compare with the non-power semiconductor, power semiconductor is more near cooling fluid pathways.Therefore, in this power model, compare, the heat that power semiconductor produced more effectively can be discharged to the system outside of power model with the heat that produces by the non-power semiconductor.In addition, non-power semiconductor and power semiconductor are configured in differing heights, so the influence of the heat that is not vulnerable to power semiconductor and is produced.
The power model of the present invention the 7th aspect forms, and aspect the present invention the 5th or in the power model of the 6th aspect, resin substrate is made of a plurality of stacked unit bodies stacked on the thickness of slab direction.In addition, the thickness of the thickness of the semi-conductive part of installation power and the semi-conductive part of installation non-power is regulated by stacked unit bodies shape separately.
In this power model, resin substrate is made of a plurality of stacked unit bodies stacked on the thickness of slab direction.In addition, the thickness of the thickness of the semi-conductive part of installation power and the semi-conductive part of installation non-power is regulated by the shape of stacked unit bodies.Therefore, in this power model, do not need to carry out complicated mechanical processing, just can produce the resin substrate of complicated shape.
The power model of the present invention the 8th aspect forms, and to arbitrary power model of the 7th aspect, power model also possesses heat diffusion portion aspect the present invention the 1st.The heat that heat diffusion portion is used for making power semiconductor at least and is produced spreads.In addition, said here " heat diffusion portion " for example is heat diffuser, heat passage, thermal conductivity filler and thermal conductivity thin slice etc.
In this power model, also have heat diffusion portion.Therefore, in this power model, the heat that power semiconductor produced can be discharged to more efficiently the system outside of power model.
The power model of the present invention the 9th aspect forms, and in the power model aspect the present invention the 8th, power model also possesses electric insulation layer.Electric insulation layer is configured between heat diffusion portion and the cooling fluid pathways.In addition, said here " electric insulation layer " both can be the electric insulation thin slice, also can be binding agent etc., can also be the part of the resin bed of multi-layer resinous substrate.
In this power model, electric insulation layer is configured between heat diffusion portion and the cooling fluid pathways.Therefore, in this power model, can prevent discharge effectively.
The power model of the present invention the 10th aspect forms, aspect the present invention the 8th or in the power model of the 9th aspect, heat diffusion portion comprises heat diffuser.Heat diffuser is configured between the installed surface of power semiconductor and resin substrate.
In this power model, heat diffuser is configured between the installed surface of power semiconductor and resin substrate.Therefore, in this power model, the heat that produced of processing power semiconductor efficiently.
The power model of the present invention the 11st aspect forms, and to arbitrary power model of the 10th aspect, heat diffusion portion comprises heat passage aspect the present invention the 8th.Heat passage is arranged on the inside of resin substrate along the direction with the plate of resin substrate hand-deliver fork.In addition, this heat passage preferably is arranged on the direction with the plate face quadrature of resin substrate.
In this power model, heat passage is arranged on the inside of resin substrate along the direction with the plate of resin substrate hand-deliver fork.Therefore, in this power model, can improve the thermal conductivity of resin substrate inside.Thereby, in this power model, can more efficiently the heat that power semiconductor produced be discharged to the system outside of power model.
The power model of the present invention the 12nd aspect forms, and to arbitrary power model of the 11st aspect, heat diffusion portion comprises the thermal conductivity filler aspect the present invention the 8th.The thermal conductivity fillers dispersed is blended in the resin portion of resin substrate.In addition, said here " thermal conductivity filler " for example is ceramic powders that has insulating properties etc.
In this power model, the thermal conductivity fillers dispersed is blended in the resin portion of resin substrate.Therefore, in this power model, can improve the thermal conductivity of resin substrate inside.Thereby, in this power model, can more efficiently the heat that power semiconductor produced be discharged to the system outside of power model.
The power model of the present invention the 13rd aspect forms, and to arbitrary power model of the 8th aspect, heat diffusion portion comprises the thermal conductivity thin slice aspect the present invention the 4th.The thermal conductivity thin slice is embedded in the resin portion of resin substrate.In addition, said here " thermal conductivity thin slice " for example is ceramic wafer (ceramic plate) with insulating properties etc.
In this power model, the thermal conductivity thin slice is embedded in the resin portion of resin substrate.Therefore, in this power model, can improve the thermal conductivity of resin substrate inside.Thereby, in this power model, can more efficiently the heat that power semiconductor produced be discharged to the system outside of power model.
The power model of the present invention the 14th aspect possesses power semiconductor, non-power semiconductor, installation base plate and cooling unit.In addition, said here " power semiconductor " for example is diode and power transistor etc.In addition, said here " non-power semiconductor " for example is microcomputer and ROM (Read Only Memory) etc.In addition, here said " resin substrate " for example be only with the substrate of resin manufacture, with the substrate of fiber-reinforced plastic manufacturing and other by substrate of the resin manufacture that is dispersed with powder etc. etc., and be at least at single face or be formed with the substrate of circuit pattern in inside.By the way, in this resin substrate, particularly preferably be the two sides resin substrate that is formed with circuit pattern on the two sides and a plurality of circuit and insulating barrier (resin bed) and on the thickness of slab direction, replace stacked stacked resin substrate etc.Power semiconductor and non-power semiconductor are configured for carrying out the power circuit of power conversions.On installation base plate, be equipped with power semiconductor and non-power semiconductor the two.In addition, the thermal conductivity of the thickness of slab direction of this installation base plate is below the 10W/ (mK).Cooling unit is provided with for the cooling power semiconductor.
In the power model of the type that the heat that power semiconductor produced is discharged by fin, usually by supplying to fin, the heat that power semiconductor produced is discharged to the system outside of power model with temperature or than the wind that this temperature exceeds tens degrees centigrade temperature.Under the situation that adopts this heat dissipating method, in power model,,, need to adopt aluminium base or ceramic substrate etc. to have the substrate of high-termal conductivity as being used for the semi-conductive substrate of installation power in order to ensure sufficient thermal diffusivity.
But, in the cooling unit of power model of the present invention, if the coolant that utilizes temperature for example to be lower than typical temperature (can be a gas, also can be liquid) etc., even then adopting thermal conductivity is the installation base plate of the installation base plate of the following low heat conductivity of 10W/ (mK) as power semiconductor, also can fully the heat that power semiconductor produced be discharged from power model.Certainly, the temperature of coolant at this moment need change according to the heat that power semiconductor produced or the thickness of resin substrate.Under this prerequisite, in this power model, can be installed in power semiconductor and non-power semiconductor on the installation base plate of a low heat conductivity.Usually, thermal conductivity is that the installation base plate of the following low heat conductivity of 10W/ (mK) utilizes manufacturings such as resin or fiber-reinforced plastic, exists much with aluminium base and ceramic substrate etc. to compare cheap material.Thereby, when making this power model, can cut down cost of material, labor cost and the cost of equipment etc. of base material.Therefore, this power model can be made with low manufacturing cost.
The air conditioner of the present invention the 15th aspect possesses refrigerant loop and power model.Power model has power semiconductor, non-power semiconductor, resin substrate and refrigerant passage.Power semiconductor and non-power semiconductor are configured for carrying out the power circuit of power transfer.Power semiconductor and non-power semiconductor are installed on resin substrate.Refrigerant passage is the path that is used to make the cold-producing medium that flows to refrigerant loop to pass through, and it is configured in the power semiconductor of resin substrate and the opposition side of the semi-conductive installed surface of non-power.
Usually in air conditioner, adopt the power model of the type that the hot type that power semiconductor produced is gone out by fin, in such power model, in general, by supplying to fin, thereby the heat that power semiconductor produced is discharged to the system outside of power model with temperature or than the wind that this temperature exceeds tens degrees centigrade temperature.Under the situation that adopts this heat dissipating method, in power model,,, need to adopt aluminium base or ceramic substrate etc. to have the substrate of high-termal conductivity as being used for the semi-conductive substrate of installation power in order to ensure sufficient thermal diffusivity.
But, in the refrigerant loop of air conditioner, the enough low position of temperature that has cold-producing medium, if can make the flow through refrigerant passage of power model of such cold-producing medium, even then adopt the installation base plate of the resin substrate of low heat conductivity, also the heat that power semiconductor produced can be discharged fully from power model as power semiconductor.Certainly, the temperature of coolant at this moment depends on the heat that power semiconductor produces and the thickness of resin substrate.Under this prerequisite, in the power model of this air conditioner, can be installed in power semiconductor and non-power semiconductor on the resin substrate.Therefore, in the power model of this air conditioner,, there is no need to adopt expensive aluminium base or ceramic substrate etc. as being used for the semi-conductive substrate of installation power.Consequently, when making this power model, can cut down cost of material, labor cost and the cost of equipment etc. of base material.Therefore, this power model can be made with low manufacturing cost.And then, also can reduce the manufacturing cost of air conditioner.
The manufacture method of the power model of the present invention the 16th aspect comprise power semiconductor fixedly operation, electric wire connect operation, non-power semiconductor and connect fixedly operation of operation and cooling unit, described power model has: the power semiconductor and the non-power semiconductor that are configured for carrying out the power circuit of power conversions; A resin substrate that is used for installation power semiconductor and non-power semiconductor; And be used for the semi-conductive cooling unit of cooling power.Fixedly in the operation, power semiconductor is fixed on the assigned position of resin substrate at power semiconductor.In electric wire connects operation, power semiconductor is connected by electric wire with circuit on being arranged on resin substrate.Connect in the operation at the non-power semiconductor, the non-power semiconductor is connected with circuit.In addition, connect the preferred reflux type that adopts in the operation at this non-power semiconductor., resin substrate is fixed on the cooling unit fixedly in the operation at cooling unit.In addition, power semiconductor fixedly operation, electric wire connect operation, non-power semiconductor connect operation and cooling unit fixedly operation also can suitably change.
In the manufacture method of this power model, fixedly in the operation, power semiconductor is fixed on the assigned position of resin substrate at power semiconductor.In addition, in electric wire connects operation, power semiconductor is connected by electric wire with circuit on being arranged on resin substrate.In addition, connect in the operation, the non-power semiconductor is connected with circuit at the non-power semiconductor.In addition,, resin substrate is fixed on the cooling unit fixedly in the operation at cooling unit.Therefore, in the manufacture method of this power model, power semiconductor and non-power semiconductor are installed on the resin substrate.Thereby,, then can cut down cost of material, labor cost and the cost of equipment etc. of base material if utilize the manufacture method of this power model.
The power model of the present invention the 1st aspect can be made with low manufacturing cost.
In the power model aspect the present invention the 2nd, if cooling fluid can be maintained suitable temperature, even then adopt the installation base plate of the resin substrate of low heat conductivity, also the heat that power semiconductor produced can be discharged from power model fully as power semiconductor.
In the power model aspect the present invention the 3rd, can shorten the distance between cooling fluid pathways and the power semiconductor.Therefore, in this power model, can more efficiently the heat that power semiconductor produced be discharged to the system outside of power model.
In the power model aspect the present invention the 4th, can suitably keep the temperature of cooling fluid.
In the power model aspect the present invention the 5th, compare, the heat that power semiconductor produced can be discharged to more efficiently the system outside of power model with the heat that produces by the non-power semiconductor.
In the power model aspect the present invention the 6th, compare, the heat that power semiconductor produced can be discharged to more efficiently the system outside of power model with the heat that produces by the non-power semiconductor.In addition, non-power semiconductor and power semiconductor are configured in differing heights, so the influence of the heat that is not vulnerable to power semiconductor and is produced.
In the power model aspect the present invention the 7th, do not need to carry out complicated mechanical processing, just can produce the resin substrate of complicated shape.
In the power model aspect the present invention the 8th, can more efficiently the heat that power semiconductor produced be discharged to the system outside of power model.
In the power model aspect the present invention the 9th, can prevent discharge effectively.
In the power model aspect the present invention the 10th, the heat that produced of processing power semiconductor efficiently.
In the power model aspect the present invention the 11st, can improve the thermal conductivity of resin substrate inside.Therefore, in this power model, can more efficiently the heat that power semiconductor produced be discharged to the system outside of power model.
In the power model aspect the present invention the 12nd, can improve the thermal conductivity of resin substrate inside.Therefore, in this power model, can more efficiently the heat that power semiconductor produced be discharged to the system outside of power model.
In the power model aspect the present invention the 13rd, can improve the thermal conductivity of resin substrate inside.Therefore, in this power model, can more efficiently the heat that power semiconductor produced be discharged to the system outside of power model.
The power model of the present invention the 14th aspect can be made with low manufacturing cost.
The air conditioner of the present invention the 15th aspect can be made with low manufacturing cost.
In the manufacture method of the power model aspect the present invention the 16th, power semiconductor and non-power semiconductor are installed on the resin substrate.Therefore, if utilize the manufacture method of this power model, then can cut down cost of material, labor cost and the cost of equipment etc. of base material.
Description of drawings
Fig. 1 is the stereoscopic figure of the air conditioner of present embodiment.
Fig. 2 is the refrigerant loop figure of the air conditioner of present embodiment.
Fig. 3 (a) is the sectional arrangement drawing that carries the power model in the air conditioner of present embodiment, and Fig. 3 (b) is the birds-eye perspective of coolant jacket portion of the power model of present embodiment.
Fig. 4 is the table of the relation of the thickness of installation base plate of expression present embodiment and heat dissipation characteristics.
Fig. 5 is the flow chart of manufacturing process of the power model of expression present embodiment.
Fig. 6 is the partial longitudinal section of carrying the power model in the air conditioner of variation (A).
Fig. 7 is the partial longitudinal section of carrying the power model in the air conditioner of variation (B).
Fig. 8 is the partial longitudinal section of carrying the power model in the air conditioner of variation (F).
Fig. 9 is the partial longitudinal section of carrying the power model in the air conditioner of variation (F).
Figure 10 is the partial longitudinal section of carrying the power model in the air conditioner of variation (F).
Figure 11 is the partial longitudinal section of carrying the power model in the air conditioner of variation (G).
Symbol description
1 air conditioner; 5,5A, 5B, 5C, 5D, 5E, 5F power model; 51,51A, 51B, 51C, 51D, 51E, 51F installation base plate (resin substrate); 53a first electronic unit (power semiconductor); 53b second electronic unit (non-power semiconductor); 54,54C heat diffuser (heat diffusion portion); 54B heat passage (heat diffusion portion); 54D thermal conductivity filler (heat diffusion portion); 54E thermal conductivity thin slice (heat diffusion portion); 57C, 57D, 57E, 57F electric insulation layer; 59,59A, 59F refrigerant passage (cooling unit).
Embodiment
The overall structure of＜air conditioner 〉
Fig. 1 is the stereoscopic figure of the air conditioner 1 of expression present embodiment.
This air conditioner 1 has: be installed in the wall-hanging indoor set 2 on indoor metope etc.; And be arranged on outdoor off-premises station 3.
Taken in indoor heat exchanger in indoor set 2, taken in outdoor heat converter in off-premises station 3, each heat exchanger links together by refrigerant piping 4, constitutes refrigerant loop thus.
The schematic configuration of the refrigerant loop of＜air conditioner 〉
Fig. 2 represents the structure of the refrigerant loop of air conditioner 1.This refrigerant loop mainly is made of indoor heat converter 20, accumulator (accumulator) 31, compressor 32, No. four transfer valves 33, outdoor heat converter 30 and electric expansion valve 34.
Be located in the indoor set 2 indoor heat converter 20 with the air that is contacted between carry out heat exchange.In addition, be provided with cross flow fan 21 in indoor set 2, this cross flow fan 21 is used to suck room air and will carries out heat-exchanged air by indoor heat converter 20 and be discharged to indoor.Cross flow fan 21 constitutes cylindric, and is provided with blade along the rotating shaft direction on side face, produces air stream on the direction that intersects with rotating shaft.This cross flow fan 21 drives rotation by the indoor fan motor 22 that is arranged in the indoor set 2.
In off-premises station 3, be provided with: compressor 32; No. four transfer valves 33 that are connected with the discharge side of compressor 32; The accumulator 31 that is connected with the suction side of compressor 32; The outdoor heat converter 30 that is connected with No. four transfer valves 33; And the electric expansion valve 34 that is connected with outdoor heat converter 30.Electric expansion valve 34 is connected with pipe arrangement 41 with liquid shutoff valve 36 by filter 35, and is connected with an end of indoor heat converter 20 by this pipe arrangement 41.In addition, No. four transfer valves 33 are connected with pipe arrangement 42 by gas shut-off valve 37, and are connected with the other end of indoor heat converter 20 by this pipe arrangement 42.This pipe arrangement 41,42 is equivalent to the refrigerant piping 4 among Fig. 1.In addition, be provided with propeller fan 38 in off-premises station 3, this propeller fan 38 is used for being discharged to the outside with carrying out heat-exchanged air at outdoor heat converter 30.This propeller fan 38 drives rotation by fan motor 39.In addition, also be connected with the coolant jacket 58 (with reference to Fig. 3) that is arranged in the power model 5 (aftermentioned) on this refrigerant loop, this power model 5 carries out the power conversions of compressor 32, fan motor 39 and electric expansion valve 34 etc.
The structure of＜power model 〉
Fig. 3 (a) is the sectional arrangement drawing of the power model 5 of expression present embodiment.
The power model 5 of present embodiment mainly is made of housing 50, the first electronic unit 53a, the second electronic unit 53b, installation base plate 51 and coolant jacket 58.
The first electronic unit 53a produces the so-called power semiconductor (comprising bare chip etc.) of big calorimetric when energising.In the present embodiment, so-called power semiconductor is meant for example diode and power transistor etc.
The second electronic unit 53b is so-called non-power semiconductor or other electronic units (surface mounting assemblies of capacitor or resistance etc.).In the present embodiment, so-called non-power semiconductor is meant for example microcomputer and ROM etc. (comprising bare chip etc.).
Installation base plate 51 is mainly by the zones that the first electronic unit 53a is installed (below be called first installation region) and zone (below be called second installation region) formation that the second electronic unit 53b is installed.First installation region is formed by the laminar glass reinforced epoxy of one deck (below be called the glass epoxide thin slice) 51a, and its thickness is about about 100 μ m.By the way, this thickness is to have considered that the caloric value from the first electronic unit 53a is that 40W, heating area are 4cm
2, the value (with reference to Fig. 4) calculated of the first electronic unit 53a situation below 100 ℃ that remains on.In this first installation region, the first electronic unit 53a is installed on one deck glass epoxide thin slice 51a by heat diffuser (heat spreader) 54 and electric conductor, and further by the encapsulation of encapsulants such as silica gel 56.On the other hand, second installation region is formed by electric conductor pattern 52 and the alternately stacked laminated resin substrate of glass epoxide thin slice 51a.In this second installation region, the second electronic unit 53b is installed on the laminated resin substrate, and the second electronic unit 53b is connected with the electric conductor pattern 52 that is configured between the glass epoxide thin slice 51a, thereby forms the control circuit of the complexity of 3D shape.In addition, the first electronic unit 53a also is connected on this electric conductor pattern 52 by electric wire 55, thereby forms the part of power circuit.Lead 57 is used for and being connected of external circuit.By the way, for the installation base plate 51 that forms present embodiment, consider to use following method etc.: (i) after having made uniform tabular cascade type installation base plate, make the thickness attenuation (circuit pattern need consider that machining forms) of first installation region of installation base plate 51 by machining; Perhaps (ii) in order to make installation base plate become the shape of design in advance, form glass fabric in advance one by one, after being immersed in epoxy resin stoste in the n layer glass fabric, to they heat, compression etc., form circuit pattern (below this glass reinforced epoxy is called circuit pattern and keeps the glass epoxide thin slice) then on the two-sided or single face at it, afterwards, (n+1) layer glass fabric that is impregnated with epoxy resin stoste is clipped in circuit pattern to be kept heating once more, compressing in the glass epoxide thin slice.In addition, in the latter case, need the mould consistent with design shape.
The manufacture method of＜power model 〉
Utilize Fig. 5 that the manufacture method of the power model 5 of embodiment of the present invention is described here.
In Fig. 5, in step S1, with the first electronic unit 53a and heat diffuser 54 combine (bonding).In step S2, the first electronic unit 53a that will obtain in step S1 and the bonded block of heat diffuser 54 are attached to first installation region of installation base plate 51.In addition, at this moment, above-mentioned bonded block combines with the mode that installation base plate 51 connects airtight with heat diffuser 54.In step S3, the electric conductor pattern of the first electronic unit 53a and installation base plate 51 52 combines by electric wire.In step S4, the second electronic unit 53b is heated to predetermined temperature under the state of the assigned position that is positioned over electric conductor pattern 52, and by (reflow) mode that refluxes the second electronic unit 53b is soldered on the electric conductor pattern 52.In addition, the material (paste soldering material etc.) that printing or coating can reflux on this electric conductor pattern 52 in advance.In step S5, wire guiding member 53c (being included among the second electronic unit 53b) is soldered on the electric conductor pattern 52 by reflux type.
The feature of＜power model 〉
(1)
In the power model 5 of present embodiment, the first electronic unit 53a and the second electronic unit 53b are installed on the same installation base plate of being made by glass reinforced epoxy 51.Therefore, compare with separating the power model in the past of making the installation base plate that installation base plate that the first electronic unit 53a uses and the second electronic unit 53b use, this power model 5 can be with the low cost manufacturing.
(2)
In the power model 5 of present embodiment, the thickness of first installation region of installation base plate 51 is enough thin, and first electronic unit 53a quilt roughly 50 ℃ cold-producing medium cools off effectively.Therefore, compare as the power model in the past of the first electronic unit 53a mounting substrate with adopting aluminium base or ceramic substrate etc., this power model 5 can be with the low cost manufacturing.In addition, in this power model 5, because installation base plate 51 made by glass reinforced epoxy, so, compare the processing characteristics excellence with above-mentioned power model in the past.In addition, in this power model 5, because installation base plate 51 made by glass reinforced epoxy, so, compare the installation reliability excellence of the first electronic unit 53a with aforesaid power model in the past.
(3)
In the power model 5 of present embodiment, the first electronic unit 53a is shorter than the beeline of the second electronic unit 53b and refrigerant passage 59 with the beeline of refrigerant passage 59.Therefore, in this power model 5, compare, the heat that power semiconductor produced can be discharged to efficiently the system outside of power model 5 with the heat that the second electronic unit 53b is produced.
＜variation 〉
(A)
Formerly in the power model 5 of execution mode, coolant jacket 58 is arranged on the opposition side of installed surface of electronic unit 53a, the 53b of installation base plate 51, and be arranged to contact, and be formed with cooling channel 59 in the inside of this coolant jacket 58 with the opposing face of the installed surface of installation base plate 51.But, as shown in Figure 6, also can form cooling channel 59A in the inside of installation base plate 51A.Can further shorten the distance of the first electronic unit 53a and refrigerant passage 59A like this.
(B)
Formerly in the power model 5 of execution mode, the thickness of first installation region of installation base plate 51 is than the thin thickness of second installation region, but the thickness of first installation region also can be identical with the thickness of second installation region.In this case, shown in the table of Fig. 4, because the heat that the first electronic unit 53a is produced can not be discharged from power model 5 fully, so as shown in Figure 7, preferably the installation base plate 51B inside around the first electronic unit 53a is provided with heat passage (thermal via) 54B.And then, also transmission of heat by contact layer 57B can be set between coolant jacket 58 and installation base plate 51B.In addition, can also between the first electronic unit 53a and installation base plate 51A, insert heat diffuser.
(C)
Formerly in the power model 5 of execution mode, determined to flow into the temperature of the cold-producing medium in the refrigerant passage 59 basically by flowing of freeze cycle.But, also can around the first electronic unit 53a, temperature sensor be set, and near the gateway of refrigerant passage 59, expansion valve be set, the evaporating temperature of control cold-producing medium is so that the maintenance of the environment temperature of the first electronic unit 53a is constant.Can protect first electronic unit more reliably like this.In addition, in this case, also the outlet of refrigerant passage 59 can be connected with the suction pipe arrangement of compressor 32.
(D)
Formerly in the power model 5 of execution mode, the thickness of first installation region of installation base plate 51 is about 100 μ m, still, also can form this thickness (with reference to Fig. 4) more than size according to the temperature that flows into refrigerant passage 59.In addition, in contrast, the thickness of first installation region of installation base plate 51 also can form below the 100 μ m, but in this case, should be noted that insulation breakdown intensity.
(E)
Formerly in the power model 5 of execution mode, the raw material of installation base plate 51 has adopted epoxy resin, but also can adopt the epoxy resin that has mixed ceramic particle with insulating properties etc.Can improve the thermal conductivity of installation base plate like this, thereby the heat that can more efficiently the first electronic unit 53a be produced is discharged to the system outside of power model 5.
(F)
Formerly in the power model 5 of execution mode, installation base plate 51 has adopted the laminated resin substrate, but, also can adopt with replacing Fig. 8, Fig. 9 and as shown in Figure 10, only be provided with two sides resin substrate 51C, 51D, the 51E of electric conductor pattern on the two sides.In such power model 5C, 5D, 5E, for the heat that the first electronic unit 53a is produced spreads to the direction of refrigerant passage 59, preferably, in the resin portion of two sides resin substrate 51C, 51D, 51E, heat passage 54C is set, thermal conductivity filler 54D is distributed in the resin portion, perhaps thermal conductivity thin slice 54E is inserted in the resin portion.In addition, if the heat diffuser 54 that the heat that setting is produced the first electronic unit 53a spreads along installed surface, then could be more effective.In addition, in this case,, preferably between two sides resin substrate 51C, 51D, 51E and coolant jacket 58, electric insulation layer 57C, 57D, 57E are set in order to ensure the insulating properties of two sides resin substrate 51C, 51D, 51E.But, be that pottery etc. has under the situation of electrical insulating property at thermal conductivity filler 54D or thermal conductivity thin slice 54E, can omit this electric insulation layer 57C, 57D, 57E.
(G)
Formerly in the power model 5 of execution mode, having adopted with the contact-making surface of installation base plate 51 is coolant jackets 58 of even shape, but also can replace, and adopts the coolant jacket 58F of band ladder difference as shown in Figure 11.Like this, coolant jacket 58F only contacts with the face of the opposition side of the installed surface of the first electronic unit 53a etc., can carry out the two sides in other parts and install.Therefore, in such power model 5F, unnecessary cooling (or heating) can be prevented, densification can be further realized simultaneously.In addition, so also can tackle the situation that lead reaches the face of installed surface opposition side.In addition, also can between coolant jacket 58F and installation base plate 51F, electric insulation layer 57F be set.
(H)
Formerly in the manufacture method of the power model 5 of execution mode, be to carry out each according to the order of step S1 → step S2 → step S3 → step S4 → step S5 to handle, but also can change this order.For example can carry out each according to the order of step S1 → step S4 → step S2 → step S3 → step S5 handles, also can carry out each and handle, can also carry out each according to the order of step S5 → step S1 → step S2 → step S3 → step S4 and handle according to the order of step S1 → step S2 → step S4 → step S3 → step S5.
(I)
Formerly in the power model 5 of execution mode, the raw material of installation base plate 51 has adopted epoxy resin, but also can adopt resin (for example phenolic resins, bimaleimide resin, polyimide resin etc.) in addition.
Power model of the present invention has the feature that can make with the manufacturing cost that is lower than power model in the past, helps the cost degradation of power model.
Claims (16)
1, a kind of power model (5,5A, 5B, 5C, 5D, 5E, 5F), this power model possesses:
Be configured for carrying out the power semiconductor (53a) and the non-power semiconductor (53b) of the power circuit of power transfer;
Be used to install a resin substrate (51,51A, 51B, 51C, 51D, 51E, 51F) of described power semiconductor and described non-power semiconductor; And
Be used to cool off the cooling unit (59,59A) of described power semiconductor.
2, power model according to claim 1 is characterized in that,
Described cooling unit is that fluid opposition side, that be used to the described power semiconductor of cooling is used that is configured in the described power semiconductor of described resin substrate and the semi-conductive installed surface of described non-power is the cooling fluid pathways that cooling fluid passes through.
3, power model according to claim 2 is characterized in that,
Described cooling fluid pathways is arranged on the inside of described resin substrate.
4, according to claim 2 or 3 described power models, it is characterized in that,
Described power model also possesses:
Temperature detecting unit, described temperature detecting unit detect described power semiconductor or near the temperature it; And
Temperature control unit, described temperature control unit is controlled the temperature of described cooling fluid, so that the temperature that detects in the described temperature detecting unit becomes described predetermined temperature.
5, according to each the described power model in the claim 2～4, it is characterized in that,
Beeline between described power semiconductor and the described cooling fluid pathways is shorter than the beeline between described non-power semiconductor and the described cooling fluid pathways.
6, according to each the described power model in the claim 1～5, it is characterized in that,
The thickness that described power semiconductor part is installed in the described resin substrate is than the thin thickness that described non-power semiconductor portions is installed.
7, according to claim 5 or 6 described power models, it is characterized in that,
Described resin substrate is installed the thickness of described power semiconductor part and the thickness of the described non-power semiconductor portions of installation and is regulated by described stacked unit bodies shape separately by constituting along the stacked a plurality of stacked unit bodies of thickness of slab direction.
8, according to each the described power model in the claim 1～7, it is characterized in that,
The heat diffusion portion that the heat that is used for making described power semiconductor at least and produced of also possessing described power model spreads (54,54B, 54C, 54D, 54E).
9, power model according to claim 8 is characterized in that,
Described power model also possesses the electric insulation layer (57C, 57D, 57E, 57F) that is configured between described heat diffusion portion and the described cooling fluid pathways.
10, according to Claim 8 or 9 described power models, it is characterized in that,
Described heat diffusion portion comprises the heat diffuser between the installed surface that is configured in described power semiconductor and described resin substrate.
11, according to Claim 8 the described power model of each～10 is characterized in that,
Described heat diffusion portion comprises the heat passage that is arranged on the inside of described resin substrate along the direction with the plate of described resin substrate hand-deliver fork.
12, according to Claim 8 the described power model of each～11 is characterized in that,
Described heat diffusion portion comprises the thermal conductivity filler of dispersing and mixing in the resin portion of described resin substrate.
13, according to each the described power model in the claim 4～8, it is characterized in that,
Described heat diffusion portion comprises the thermal conductivity thin slice in the resin portion that is embedded in described resin substrate.
14, a kind of power model (5,5A, 5B, 5C, 5D, 5E, 5F) is characterized in that described power model possesses:
Be configured for carrying out the power semiconductor (53a) and the non-power semiconductor (53b) of the power circuit of power conversions;
Be used to install thermal conductivity described power semiconductor and non-power semiconductor, the thickness of slab direction and be a following installation base plate of 10W/ (mK) (51,51A, 51B, 51C, 51D, 51E, 51F); And
Be used to cool off the cooling unit (59,59A) of described power semiconductor.
15, a kind of air conditioner is characterized in that, described air conditioner possesses:
Refrigerant loop and power model (5,5A, 5B, 5C, 5D, 5E, 5F),
Described power model (5,5A, 5B, 5C, 5D, 5E, 5F) has:
Be configured for carrying out the power semiconductor (53a) and the non-power semiconductor (53b) of the power circuit of power conversions; Be used to install a resin substrate (51,51A, 51B, 51C, 51D, 51E, 51F) of described power semiconductor and described non-power semiconductor; And refrigerant passage (59,59A), this refrigerant passage (59,59A) is configured in the described power semiconductor of described resin substrate and the opposition side of the semi-conductive installed surface of described non-power, is used to make the cold-producing medium that flows to described refrigerant loop to pass through.
16, the manufacture method of a kind of power model (5,5A, 5B, 5C, 5D, 5E, 5F), described power model (5,5A, 5B, 5C, 5D, 5E, 5F) possesses: the power semiconductor (53a) and the non-power semiconductor (53b) that are configured for carrying out the power circuit of power conversions; Be used to install a resin substrate (51,51A, 51B, 51C, 51D, 51E, 51F) of described power semiconductor and described non-power semiconductor; And the cooling unit (59,59A) that is used to cool off described power semiconductor, it is characterized in that,
The manufacture method of described power model comprises following operation:
Described power semiconductor is fixed on the fixing operation of power semiconductor on the assigned position of described resin substrate;
Described power semiconductor is connected operation with circuit on being arranged at described resin substrate by the electric wire wire connecting;
The non-power semiconductor that described non-power semiconductor is connected with described circuit connects operation; And
Described resin substrate is fixed on the fixing operation of cooling unit on the described cooling unit.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004359665 | 2004-12-13 | ||
| JP359665/2004 | 2004-12-13 | ||
| JP109720/2005 | 2005-04-06 |
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| CN100557798C CN100557798C (en) | 2009-11-04 |
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| Application Number | Title | Priority Date | Filing Date |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103035584A (en) * | 2011-09-30 | 2013-04-10 | 三星电机株式会社 | Power module package and method of manufacturing the same |
| CN103237722A (en) * | 2010-12-27 | 2013-08-07 | 川崎重工业株式会社 | Saddle-type electric vehicle |
| CN107481978A (en) * | 2017-08-24 | 2017-12-15 | 广东美的制冷设备有限公司 | SPM and its manufacture method |
| CN110113867A (en) * | 2019-05-31 | 2019-08-09 | 维沃移动通信有限公司 | Radiator structure and mobile terminal |
-
2005
- 2005-12-01 CN CNB2005800424192A patent/CN100557798C/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103237722A (en) * | 2010-12-27 | 2013-08-07 | 川崎重工业株式会社 | Saddle-type electric vehicle |
| CN103237722B (en) * | 2010-12-27 | 2017-02-08 | 川崎重工业株式会社 | Saddle-type electric vehicle |
| CN103035584A (en) * | 2011-09-30 | 2013-04-10 | 三星电机株式会社 | Power module package and method of manufacturing the same |
| CN107481978A (en) * | 2017-08-24 | 2017-12-15 | 广东美的制冷设备有限公司 | SPM and its manufacture method |
| CN110113867A (en) * | 2019-05-31 | 2019-08-09 | 维沃移动通信有限公司 | Radiator structure and mobile terminal |
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| Publication number | Publication date |
|---|---|
| CN100557798C (en) | 2009-11-04 |
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