CN101075555A - System for displaying image and method for laser annealing cryogenic polycrystalline silicon - Google Patents
System for displaying image and method for laser annealing cryogenic polycrystalline silicon Download PDFInfo
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- CN101075555A CN101075555A CN 200610080561 CN200610080561A CN101075555A CN 101075555 A CN101075555 A CN 101075555A CN 200610080561 CN200610080561 CN 200610080561 CN 200610080561 A CN200610080561 A CN 200610080561A CN 101075555 A CN101075555 A CN 101075555A
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Abstract
This is a leaser anneal method for low temperature polysilicon. The polysilicon layer is coated on a metal layer on glass baseboard. The anneal process is as: the polysilicon layer is melted by irradiation of a stream of leaser of wavelength longer than 400 nanometer, and then re-crystallized through secondary heating by the reflected leaser from the metal layer; then keep the polysilicon being cooling down to room temperature.
Description
Technical field
The present invention relates to the method for annealing of a kind of system and polysilicon, particularly relate to a kind of utilization rate that can improve laser beam, use cost be can save, the system that is used for show image of electron mobility of membrane transistor and the laser anneal method of low temperature polycrystalline silicon promoted more.
Background technology
Along with the arriving in numerical digit epoch, the membrane transistor LCD is grown up fast, almost becomes everyone or the indispensable electronic product of each family.
The membrane transistor LCD can be divided into amorphous silicon (amorphoussilicon because of different liquid crystal panels, a-Si) membrane transistor (thin film transistor, TFT) LCD and low temperature polycrystalline silicon (low temperature polysilicon, LTPS) TFT LCD, and the difference of LTPSTFT display and a-Si TFT display is, LTPS TFT display is for using the LTPS liquid crystal panel, and LTPS TFT display has polysilicon layer so have excellent electric characteristics than a-Si TFT display, and electric crystal array film and peripheral driving circuit can be integrated in LTPS TFT display, increase the flexibility ratio of panel and circuit design, so be subjected to the attention in market gradually.
With regard to the difference on the processing procedure then be, LTPS TFT panel than many one laser annealings of a-Si TFT panel (Laser Annealing) processing procedure to change the silicon film in the electric crystal into polysilicon by amorphous silicon, so can promote the electron mobility (electron mobility) of membrane transistor.With regard to the processing flow that has known low-temperature polysilicon film electric crystal now, see also shown in Figure 1A to Fig. 1 D, be to show the schematic diagram that has known quasi-molecule laser annealing mode now.Below be example with the gate, at first, see also shown in Figure 1A, on glass substrate 11, form a resilient coating 12 and a gate 13 and insulating barrier 14; Then, see also shown in Figure 1B, on gate 13 and glass substrate 11, form amorphous silicon membrane layer 15, and utilize quasi-molecule laser annealing (excimer laser annealing, ELA) mode, make 15 fusion of amorphous silicon membrane layer with excimer laser EL irradiation, please shown in Figure 2 in conjunction with consulting, can learn by experiment, amorphous silicon for short wavelength laser (wave-length coverage be about 157 how rice to 400 rice how) absorptivity of irradiation is good, for example using gases is the excimer laser of XeCl, its wavelength is 308 rice how, the absorptivity of amorphous silicon film is close to for a hundred per cent (square as Figure 1B partly is absorption portion), so excimer laser can't penetrate amorphous silicon membrane layer 15; Then, see also shown in Fig. 1 C, amorphous silicon membrane layer 15 melts and changes layer polysilicon film 15 ' into when quasi-molecule laser annealing; At last, see also shown in Fig. 1 D, form source electrode 152, drain 153, channel region 151 via doping at this layer polysilicon film 15 '.
When at the quasi-molecule laser annealing processing procedure, be with excimer laser EL irradiation amorphous silicon membrane layer 15, because the irradiation energy of excimer laser EL is uniformly distributed in amorphous silicon membrane layer 15, so make amorphous silicon membrane layer 15 present the fritting state gradually, and the unfused silicon of part is understood the crystal seed of crystallization again of conduct earlier, grow into crystal grain again, so last then formation is evenly distributed and granular size is identical but the big or small layer polysilicon film 15 less than normal of crystalline particle, because the crystalline particle of layer polysilicon film 15 is less than normal, so not only make the current characteristics and the dissmilarity of membrane transistor, more can't promote the electron mobility of membrane transistor; In addition, when excimer laser EL irradiation amorphous silicon membrane layer 15, because the gate of the below of amorphous silicon membrane layer 15 13 is a metal, so have thermal conduction effect, making near the particle of the silicon fiml institute crystallization of gate 13 lessly, but is channel regions as membrane transistor when using near the multi-crystal silicon area of gate 13, when the polysilicon crystal particle of channel region too hour, then reduce, also influence the usefulness of LTPS TFT display except meeting causes the electron mobility of membrane transistor.
In addition owing to use the cost of excimer laser EL higher, and the useful life of excimer laser EL short with easy care not; On the other hand, the formed crystallite dimension of excimer laser tempering manufacturing process is too small, and dimensional homogeneity control is difficult, and is very serious for the electron mobility influence of membrane transistor.
How therefore a kind of big crystal grain that has is provided, with the system that is used for show image that reaches the electron mobility that improves membrane transistor and the laser anneal method of low temperature polycrystalline silicon, real one of the current important research and development problem that belongs to, also becoming the current industry utmost point needs improved target.
Summary of the invention
The objective of the invention is to, a kind of laser anneal method of the low temperature polycrystalline silicon that improves the membrane transistor electron mobility is provided and has the system that is used for show image than the membrane transistor of high electron mobility.
The object of the invention to solve the technical problems realizes by the following technical solutions.The method for annealing of a kind of low temperature polycrystalline silicon that proposes according to the present invention, be used for a glass substrate, wherein be to be formed with a first metal layer and a silicon film on this glass substrate, this method for annealing comprises the following steps: a wavelength greater than 400 these silicon films of laser beam irradiation of rice how, wherein this silicon film absorbs the part of this laser beam and is heated fusing, and another part of this laser beam is to penetrate this silicon film and reflex to this silicon film from this first metal layer, so that this silicon film absorbs this laser beam of reflection and is heated crystallization again; And leave standstill this silicon film behind this laser beam irradiation, so that the temperature of this silicon film drops to room temperature.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
The method for annealing of aforesaid low temperature polycrystalline silicon, wherein said silicon film has a first area, a second area and one the 3rd zone, this first area, this second area and the 3rd zone are via this laser radiation post crystallization, and this first area is to be located between this second area and the 3rd zone, this first area is also relative with this first metal layer and establish and absorb from this laser beam of this first metal layer reflection and crystallization again, and the crystalline particle of this first area after the crystallization is greater than the crystalline particle of this second area and the crystalline particle in the 3rd zone again.
The method for annealing of aforesaid low temperature polycrystalline silicon, wherein the crystalline particle of contiguous this first metal layer is big than the crystalline particle of other parts of first area in this first area.
The method for annealing of aforesaid low temperature polycrystalline silicon, wherein said the first metal layer, this second area and the 3rd zone are gate, source electrode and the drains that is respectively an electric crystal, and this first area is the channel region for this electric crystal.
The method for annealing of aforesaid low temperature polycrystalline silicon, be formed with one first insulating barrier on the wherein said glass substrate, and this first metal layer is to be arranged on this glass substrate, and this first insulating barrier is to be arranged on this first metal layer, and this silicon film is to be arranged on this first insulating barrier.
The method for annealing of aforesaid low temperature polycrystalline silicon is formed with one second metal level and one second insulating barrier on the wherein said glass substrate, this second insulating barrier is to be arranged on this silicon film, and this second metal level is to be arranged on this second insulating barrier.
The method for annealing of aforesaid low temperature polycrystalline silicon is formed with an insulating barrier on the wherein said glass substrate, this polycrystalline silicon membrane is arranged on this glass substrate, and this insulating barrier is to be arranged on this silicon film, and this first metal layer is to be arranged on this insulating barrier.
The method for annealing of aforesaid low temperature polycrystalline silicon, the thickness of wherein said the first metal layer is greater than 100 dusts.
The method for annealing of aforesaid low temperature polycrystalline silicon, wherein said laser beam are to be a solid-state laser bundle.
The object of the invention to solve the technical problems also realizes by the following technical solutions.A kind of system according to the present invention's proposition, be to be used for show image, this system comprises: a low temperature polycrystalline silicon substrate, it has a glass substrate, one the first metal layer and a polycrystalline silicon membrane, be formed with this first metal layer and this polycrystalline silicon membrane on this glass substrate, this polycrystalline silicon membrane is to have a first area, one second area and one the 3rd zone, wherein this first area is to be located between this second area and the 3rd zone, it is also relative with this first metal layer and establish, and the crystalline particle of this first area is greater than the crystalline particle of this second area and the crystalline particle in the 3rd zone.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
Aforesaid system, wherein said polycrystalline silicon membrane is via after the laser annealing fabrication process, and the crystalline particle of this first area is greater than the crystalline particle in this second area and the 3rd zone.
Aforesaid system, wherein the crystalline particle of contiguous this first metal layer is big than the crystalline particle of these other parts of first area in this first area.
Aforesaid system, wherein said the first metal layer, this second area and the 3rd zone are gate, source electrode and the drains that is respectively an electric crystal, and this first area is the channel region for this electric crystal.
Aforesaid system, wherein said low temperature polycrystalline silicon substrate more comprises one first insulating barrier, and wherein this first metal layer is arranged on this glass substrate, and this first insulating barrier is arranged on this first metal layer, and this polycrystalline silicon membrane is to be arranged on this first insulating barrier.
Aforesaid system, wherein said low temperature polycrystalline silicon substrate more comprises: one second insulating barrier is to be arranged on this polycrystalline silicon membrane; And one second metal level, be to be arranged on this second insulating barrier.
Aforesaid system, wherein said low temperature polycrystalline silicon substrate more comprises an insulating barrier, and wherein this polycrystalline silicon membrane is to be arranged on this glass substrate, and this insulating barrier is to be arranged on this polycrystalline silicon membrane, and this first metal layer is to be arranged on this exhausted layer.
Aforesaid system, the thickness of wherein said the first metal layer is greater than 100 dusts.
Aforesaid system, it more comprises a liquid crystal indicator, is to have this low tempterature poly silicon and a module backlight, and wherein this low tempterature poly silicon is to comprise the low temperature polycrystalline silicon substrate, and this module backlight is a side that is mounted on this low tempterature poly silicon.
Aforesaid system, it more comprises an electronic installation, be to have this low tempterature poly silicon and an input unit, wherein this low tempterature poly silicon comprises the low temperature polycrystalline silicon substrate, this input unit and the coupling of this low tempterature poly silicon, and provide input to this low tempterature poly silicon, so that this low tempterature poly silicon show image.
Aforesaid system, wherein said electronic installation is portable phone, numerical digit camera, personal digital assistant, mobile computer (be computer, below all be called computer), desktop PC, television set, automobile-used display or Portable DVD player.
The present invention compared with prior art has tangible advantage and beneficial effect.By above technical scheme as can be known, major technique of the present invention thes contents are as follows:
In order to achieve the above object, the method for annealing according to a kind of low temperature polycrystalline silicon of the present invention is used for a glass substrate, wherein is to be formed with a first metal layer and a silicon film on the glass substrate.And method for annealing comprises the following steps: at first, with a wavelength greater than the 400 laser beam irradiation silicon films of rice how, wherein silicon film absorbs the part of laser beam and is heated fusing, and another part of laser beam is to penetrate silicon film and reflex to silicon film from the first metal layer, so that silicon film absorbs the laser light reflected bundle and is heated and crystallization; At last, behind laser beam irradiation, leave standstill silicon film, so that the temperature of silicon film drops to room temperature.
In addition, in order to achieve the above object, comprise a low tempterature poly silicon according to a kind of system that is used for show image of the present invention, low tempterature poly silicon is to have a glass substrate, one the first metal layer and a polycrystalline silicon membrane, be to be formed with the first metal layer and polycrystalline silicon membrane on the glass substrate, and polycrystalline silicon membrane is to have a first area, one second area and one the 3rd zone, wherein the first area is to be located between second area and the 3rd zone, it is also relative with the first metal layer and establish, and the crystalline particle of first area is greater than the crystalline particle of second area and the crystalline particle in the 3rd zone.
By technique scheme, the present invention is used for the system of show image and the laser anneal method of low temperature polycrystalline silicon has following advantage at least: from the above, because according to a kind of system of show image and laser anneal method of low temperature polycrystalline silicon of being used for of the present invention, be to utilize laser beam irradiation and utilize the first metal layer that laser beam is reflected, silicon film is melted via a part that absorbs laser beam, and by the first metal layer another part of laser beam is reflexed to the first area of silicon film again, so that the time that the first area is in molten condition is long than the time that second area and the 3rd zone are in molten condition, so also the crystalline particle than second area and the 3rd zone is big for the crystalline particle of first area, and leave standstill and make the temperature of silicon film drop to room temperature, silicon film is then because of being transformed into polycrystalline silicon membrane behind the laser beam irradiation.Compare with existing known techniques, owing to utilize the first metal layer, can make the part laser beam that is not absorbed by silicon film, via first metallic reflection silicon film is absorbed once more, and via repeatedly absorbing and reflecting, the energy of laser beam is almost completely absorbed by silicon film, not only improved the utilization rate of laser beam, also owing to using the solid-state laser bundle, so more can save use cost; And also heat because of repeatedly absorbing laser beam the first area of silicon film, increase the melting time of first area, make the polycrystalline silicon membrane that obtains bigger and uniform crystalline particle and fabricating low-defect-density after the crystallization of first area, promote the electron mobility of membrane transistor more.
In sum, the invention relates to a kind of system of show image and laser anneal method of low temperature polycrystalline silicon of being used for.The method for annealing of this low temperature polycrystalline silicon, be used for a glass substrate, wherein be to be formed with a first metal layer and a silicon film on the glass substrate, and method for annealing comprises the following steps: a wavelength greater than 400 these silicon films of laser beam irradiation of rice how, wherein silicon film absorbs the part of laser beam and is heated fusing, and another part of laser beam is to penetrate silicon film and reflex to silicon film from the first metal layer, so that silicon film absorbs the laser light reflected bundle and is reheated and crystallization; And leave standstill silicon film behind laser beam irradiation, so that the temperature of silicon film drops to room temperature.The invention provides a kind of laser anneal method of the low temperature polycrystalline silicon that improves the membrane transistor electron mobility and have the system that is used for show image than the membrane transistor of high electron mobility.It has above-mentioned plurality of advantages and practical value, no matter bigger improvement is all arranged on method, product structure or function, obvious improvement is arranged technically, and produced handy and practical effect, thereby be suitable for practicality more, and have the extensive value of industry, really be a new and innovative, progressive, practical new design.
Above-mentioned explanation only is the general introduction of technical solution of the present invention, for can clearer understanding technological means of the present invention, and can be implemented according to the content of specification, and for above-mentioned and other purposes, feature and advantage of the present invention can be become apparent, below especially exemplified by preferred embodiment, and conjunction with figs., be described in detail as follows.
Description of drawings
Figure 1A to Fig. 1 D shows the schematic diagram that has known quasi-molecule laser annealing mode now.
Fig. 2 shows according to the different wavelength of laser of preferred embodiment of the present invention schematic diagram to the penetrance of amorphous silicon.
Fig. 3 is the schematic diagram of demonstration according to the structure of a kind of low tempterature poly silicon of preferred embodiment of the present invention.
Fig. 4 is the flow chart of demonstration according to the method for annealing of a kind of low temperature polycrystalline silicon of preferred embodiment of the present invention.
Fig. 5 A to 5E is the schematic diagram that shows according to the crystalline particle of the polycrystalline silicon membrane of the method for annealing of a kind of low temperature polycrystalline silicon of preferred embodiment of the present invention and low temperature polycrystal film transistor substrate.
Fig. 6 is the schematic diagram of demonstration according to the structure of the another kind of low temperature polycrystal film transistor substrate of preferred embodiment of the present invention.
Fig. 7 is the schematic diagram of demonstration according to the structure of another low temperature polycrystal film transistor substrate of preferred embodiment of the present invention.
Fig. 8 is the schematic diagram of demonstration according to the liquid crystal indicator of a kind of system of preferred embodiment of the present invention.
Fig. 9 is the schematic diagram of demonstration according to the electronic installation of a kind of system of preferred embodiment of the present invention.
11: glass substrate 12: resilient coating
13: gate 14: exhausted green layer
15: amorphous silicon membrane layer 151: channel region
152: source electrode 153: drain
15 ': layer polysilicon film 2: low tempterature poly silicon
20: low-temperature polysilicon film transistor substrate 21: glass substrate
22: the first metal layer 23: silicon film
23 ': polycrystalline silicon membrane 231: first area
The first area 232 of 231 ' polysilicon: second area
233: the three zones of the second area of 232 ' polysilicon
The 3rd zone 24 of 233 ' polysilicon: resilient coating
25: the first insulating barriers 25 ': insulating barrier
27: the second metal levels of 26: the second insulating barriers
28: liquid crystal layer 29: colored filter
30: low-temperature polysilicon film transistor substrate 40: the low-temperature polysilicon film transistor substrate
5: liquid crystal indicator 6: module backlight
7: electronic installation 8: input unit
EL: excimer laser L: laser beam
L1: a part of L2 of laser beam: another part of laser beam
S01～S02: process step
Embodiment
Reach technological means and the effect that predetermined goal of the invention is taked for further setting forth the present invention, below in conjunction with accompanying drawing and preferred embodiment, the system that is used for show image that foundation the present invention is proposed and its embodiment of laser anneal method, structure, method, step, feature and the effect thereof of low temperature polycrystalline silicon, describe in detail as after.
Hereinafter with reference to correlative type, a kind of system of show image and the laser anneal method of low temperature polycrystalline silicon of being used for according to preferred embodiment of the present invention is described, wherein components identical will be illustrated with identical reference marks.
Seeing also shown in Figure 3ly, is the schematic diagram that shows according to the structure of a kind of low tempterature poly silicon of preferred embodiment of the present invention.The method for annealing of a kind of low temperature polycrystalline silicon of preferred embodiment of the present invention, be to be applied to a kind of low-temperature polysilicon film transistor substrate 20, this low-temperature polysilicon film transistor substrate 20 is to have a glass substrate 21, on this glass substrate 21, be formed with a resilient coating 24, and a first metal layer 22 is to be arranged on the resilient coating 24, form one first insulating barrier 25 again on the first metal layer 22, one silicon film 23 then is arranged on first insulating barrier 25, is to shine silicon film 23 with laser beam L above glass substrate at this method for annealing.
Please consult Fig. 3 and shown in Figure 4 simultaneously, Fig. 4 is the flow chart of demonstration according to the method for annealing of a kind of low temperature polycrystalline silicon of preferred embodiment of the present invention.The method for annealing of the low temperature polycrystalline silicon of preferred embodiment of the present invention, comprise the following steps: at step S01, with a wavelength greater than the 400 laser beam L irradiation silicon films 23 of rice how, wherein silicon film 23 absorbs the part of laser beam L and is heated and melts, and another part of laser beam L is to penetrate silicon film 23 and reflex to silicon film 23 from the first metal layer 22, is heated so that silicon film 23 absorbs laser light reflected bundle L and crystallization again (shown in the scope that the dotted line of Fig. 3 forms); Laser beam L in this enforcement is to use a solid-state laser bundle, and silicon film 23 not with the first metal layer 22 corresponding parts, then absorb the part of laser beam L, another part of laser beam L then penetrates silicon film 23 and is not reflected.
At step S02, after laser beam L irradiation, leave standstill silicon film 23, so that the temperature of silicon film 23 drops to room temperature.
At last, silicon film 23 changes a polycrystalline silicon membrane into via crystallization behind laser anneal method.
In addition, be easier to understand for making the present invention, will be at the method for annealing of the low temperature polycrystalline silicon of present embodiment, the step with shown in Fig. 5 A to Fig. 5 E is specified.Fig. 5 A to 5E is the schematic diagram that shows according to the crystalline particle of the polycrystalline silicon membrane of the method for annealing of a kind of low temperature polycrystalline silicon of preferred embodiment of the present invention and low temperature polycrystal film transistor substrate.
Please consult simultaneously shown in Fig. 4 and Fig. 5 A, in the present embodiment, silicon film 23 is to have a first area 231, a second area 232 and one the 3rd zone 233, and first area 231 is to be located between second area 232 and the 3rd zone 233, and it is relative with the first metal layer 22 and establish, wherein the thickness of the first metal layer 22 is greater than 100 dusts, so that the first metal layer 22 is able to reflection lasering beam L, wherein laser beam L comprises a part of L1 of laser beam and another part L2 of electric irradiating light beam.When laser beam L irradiation silicon film 23, first area 231, second area 232 and the 3rd zone 233 are all via laser beam L irradiation heating, make first area 231, second area 232 and the 3rd zone 233 produce fusion, and beginning crystallization, but owing to use the solid-state laser bundle, amorphous silicon is for 400 long above laser absorption rates not good (as shown in Figure 2) of metric wave how, so 23 of silicon films can absorb a part of L1 of laser beam.
With regard to first area 231, see also shown in Fig. 5 B, first area 231 is in a part of L1 that absorbs laser beam and fusing, and another part L2 of laser beam can penetrate first area 231 and expose to the first metal layer 22, because of the thickness of the first metal layer 22 enough big, so the first metal layer 22 can't be worn by laser beam L and penetrates, can another part L2 of laser beam be reflexed to first area 231 by the first metal layer 22 on the contrary.
See also shown in Fig. 5 C and Fig. 5 D, make first area 231 once more by another part L2 that absorbs the laser light reflected bundle, also heat first area 231 once more, so that the time that first area 231 is in molten condition is long than the time that second area and the 3rd zone are in molten condition, and first area 231 is after annealing and crystallization again; With regard to second area 232 and the 3rd zone 233, see also shown in Fig. 5 B, be when laser beam L shines, because second area 232 and the 3rd zone 233 are not arranged on the first metal layer 22, so a part of L1 of laser beam is also by second area 232 and the 3rd 233 absorptions in zone, another part L2 of laser beam then penetrates not and to produce reflection, and second area 232 and the 3rd zone 233 are heated and produce fusion and crystallization.
At last, please consult shown in Fig. 5 E again, be behind method for annealing, 23 of silicon films change polycrystalline silicon membrane 23 ' into by amorphous silicon, so it is the first area 231 ' of polysilicon that 231 of first areas reach crystalline transition via fusing again, the second area 232 ' and the 3rd zone 233 ' of polysilicon also changed in second area 232 and the 3rd zone 233 into.
Please consult again shown in Fig. 5 E, because the first area 231 ' of polysilicon almost completely absorbs laser beam L, so the crystalline particle of first area 231 ' is greater than the crystalline particle of second area 232 ' and the crystalline particle in the 3rd zone 233 '; Again because laser beam L is reflexed to first area 231 ' by the first metal layer 22, so first area 231 ' interior contiguous the first metal layer 22 is shone and is heated, more other parts than first area 231 ' increase many melting times and crystallization again, make the crystalline particle of contiguous the first metal layer 22 in the first area 231 ', the laser beam L energy that crystalline particle absorbed than other parts in the first area 231 ' is more, so also the crystalline particle than other parts of first area 231 ' is big for the crystalline particle that is close to the first metal layer 22 in the first area 231 '.At last, be behind the method for annealing of low temperature polycrystalline silicon, again by dopping process, form a membrane transistor, and the first metal layer 22 in the present embodiment is the gate of electric crystal, the second area 232 ' of polysilicon and the 3rd zone 233 ' are source electrode and the drains for electric crystal, and the first area 231 ' of polysilicon then is the channel region of electric crystal.
Please consulting shown in Figure 6ly again, is the schematic diagram that shows according to the structure of the another kind of low temperature polycrystal film transistor substrate of preferred embodiment of the present invention.The structure of another low-temperature polysilicon film transistor substrate 30 of present embodiment, behind above-mentioned method for annealing processing procedure (shown in Fig. 5 E), one second insulating barrier 26 is set on polycrystalline silicon membrane 23 ' again, one second metal level 27 is set on this first insulating barrier 26 again, promptly forms another processing procedure sample attitude; And again by dopping process, form a membrane transistor, the first metal layer 22 and second metal level 27 are all the gate of electric crystal in the present embodiment, the second area 232 ' of polysilicon and the 3rd zone 233 ' are source electrode and the drains for electric crystal, and the first area 231 ' of polysilicon then is the channel region of electric crystal.In addition, the first metal layer can be the shading metal in other embodiments, and second metal level is a gate.
Seeing also shown in Figure 7ly, is the schematic diagram that shows according to the structure of another low temperature polycrystal film transistor substrate of preferred embodiment of the present invention.The present invention is the low-temperature polysilicon film transistor substrate 40 of a preferred embodiment again, its structure then is, on glass substrate 21, form a resilient coating 24, polycrystalline silicon membrane 23 ' is arranged on the resilient coating 24, and an insulating barrier 25 ' is set on polycrystalline silicon membrane 23 ', the first metal layer 22 is set again on insulating barrier 25 '; So when carrying out laser anneal method, then laser beam L is from glass substrate 21 belows irradiation silicon film 23, and behind method for annealing, 23 of silicon films change polycrystalline silicon membrane 23 ' into; And at last when processing procedure, again by mixing to form a membrane transistor, and the first metal layer 22 is the gate of electric crystal, and the second area 232 ' of polysilicon and the 3rd zone 233 ' are source electrode and the drains for electric crystal, and the first area 231 ' of polysilicon then is the channel region of electric crystal.
In addition, seeing also shown in Figure 8ly, is the schematic diagram that shows according to the liquid crystal indicator of a kind of system of preferred embodiment of the present invention.A kind of system according to preferred embodiment of the present invention is used for show image, and this system comprises a liquid crystal indicator 5, and this liquid crystal indicator 5 is to have a low tempterature poly silicon 2 and a module 6 backlight.In the present embodiment, this module 6 backlight is sides of being located at low tempterature poly silicon 2.
And low tempterature poly silicon 2 is to comprise low-temperature polysilicon film transistor substrate 20, a liquid crystal layer 28 and a colored filter substrate 29; The low-temperature polysilicon film transistor substrate 20 of present embodiment is to have glass substrate 21, the first metal layer 22, polycrystalline silicon membrane 23 ', be on glass substrate 21, to form a first metal layer 22 and a polycrystalline silicon membrane 23 ', on polycrystalline silicon membrane, form liquid crystal layer 28 and colored filter substrate 29 again.
With regard to the liquid crystal indicator 5 of present embodiment, it is the light source (shown in the direction of arrow of Fig. 8) that utilizes module 6 backlight, via low-temperature polysilicon film transistor substrate 20, liquid crystal layer 28 and colored filter 29, picture is presented on the liquid crystal indicator 5, watch for the user; Because liquid crystal indicator 5 is to have low tempterature poly silicon 2, thus electron mobility is promoted, and cause conductivity good, and can reach power saving and the good usefulness of display frame.
The low-temperature polysilicon film transistor substrate 20 of present embodiment is characterised in that, polycrystalline silicon membrane is to have a first area, a second area and one the 3rd zone, wherein the first area is to be located between second area and the 3rd zone, it is also relative with the first metal layer and establish, and the crystalline particle of first area is greater than the crystalline particle of second area and the crystalline particle in the 3rd zone.Because being the method for annealing processing procedure by above-mentioned (shown in Fig. 4 and Fig. 5 A to Fig. 5 E) low temperature polycrystalline silicon, low tempterature poly silicon forms, so do not repeat them here.
Seeing also shown in Figure 9ly, is the schematic diagram that shows according to the electronic installation of a kind of system of preferred embodiment of the present invention.The system that the present invention is used for show image more comprises an electronic installation 7, this electronic installation 7 is to have a low tempterature poly silicon 2 and an input unit 8, wherein, this low tempterature poly silicon 2 is to have low-temperature polysilicon film transistor substrate 20, and this input unit 8 is and low tempterature poly silicon 2 couplings, and provide and input to low tempterature poly silicon 2, so that low tempterature poly silicon 2 shows specified image or the data of input units.The electronic installation 7 of present embodiment be for, for example: portable phone, numerical digit camera, personal digital assistant, mobile computer, desktop PC, television set, automobile-used display or Portable DVD player etc.
In sum, because according to a kind of system of show image and laser anneal method of low temperature polycrystalline silicon of being used for of the present invention, be to utilize laser beam irradiation and utilize the first metal layer that laser beam is reflected, silicon film is melted via a part that absorbs laser beam, and by the first metal layer another part of laser beam is reflexed to the first area of silicon film again, so that the time that the first area is in molten condition is long than the time that second area and the 3rd zone are in molten condition, so also the crystalline particle than second area and the 3rd zone is big for the crystalline particle of first area, and leave standstill and make the temperature of silicon film drop to room temperature, silicon film is then because of being transformed into polycrystalline silicon membrane behind the laser beam irradiation.Compare with prior art, owing to utilize the first metal layer, can make the part laser beam that is not absorbed by silicon film, via first metallic reflection silicon film is absorbed once more, and via repeatedly absorbing and reflecting, the energy of laser beam is almost completely absorbed by silicon film, not only improved the utilization rate of laser beam, also owing to using the solid-state laser bundle, so more can save use cost; And also heat because of repeatedly absorbing laser beam the first area of silicon film, increase the melting time of first area, make the polycrystalline silicon membrane that obtains bigger and uniform crystalline particle and fabricating low-defect-density after the crystallization of first area, promote the electron mobility of membrane transistor more.
The above, it only is preferred embodiment of the present invention, be not that the present invention is done any pro forma restriction, though the present invention discloses as above with preferred embodiment, yet be not in order to limit the present invention, any those skilled in the art, in not breaking away from the technical solution of the present invention scope, when the method that can utilize above-mentioned announcement and technology contents are made a little change or be modified to the equivalent embodiment of equivalent variations, in every case be the content that does not break away from technical solution of the present invention, according to technical spirit of the present invention to any simple modification that above embodiment did, equivalent variations and modification all still belong in the scope of technical solution of the present invention.
Claims (20)
1, a kind of method for annealing of low temperature polycrystalline silicon is used for a glass substrate, wherein is to be formed with a first metal layer and a silicon film on this glass substrate, it is characterized in that this method for annealing comprises the following steps:
With a wavelength greater than 400 these silicon films of laser beam irradiation of rice how, wherein this silicon film absorbs the part of this laser beam and is heated fusing, and another part of this laser beam is to penetrate this silicon film and reflex to this silicon film from this first metal layer, so that this silicon film absorbs this laser beam of reflection and is heated crystallization again; And
Behind this laser beam irradiation, leave standstill this silicon film, so that the temperature of this silicon film drops to room temperature.
2, the method for annealing of low temperature polycrystalline silicon according to claim 1, it is characterized in that wherein said silicon film has a first area, one second area and one the 3rd zone, this first area, this second area and the 3rd zone are via this laser radiation post crystallization, and this first area is to be located between this second area and the 3rd zone, this first area is also relative with this first metal layer and establish and absorb from this laser beam of this first metal layer reflection and crystallization again, and the crystalline particle of this first area after the crystallization is greater than the crystalline particle of this second area and the crystalline particle in the 3rd zone again.
3, the method for annealing of low temperature polycrystalline silicon according to claim 2 is characterized in that wherein the crystalline particle of contiguous this first metal layer in this first area is big than the crystalline particle of other parts of first area.
4, the method for annealing of low temperature polycrystalline silicon according to claim 2, it is characterized in that wherein said the first metal layer, this second area and the 3rd zone are gate, source electrode and the drains that is respectively an electric crystal, and this first area is the channel region for this electric crystal.
5, the method for annealing of low temperature polycrystalline silicon according to claim 1, it is characterized in that being formed with on the wherein said glass substrate one first insulating barrier, and this first metal layer is to be arranged on this glass substrate, this first insulating barrier is to be arranged on this first metal layer, and this silicon film is to be arranged on this first insulating barrier.
6, the method for annealing of low temperature polycrystalline silicon according to claim 5, it is characterized in that being formed with on the wherein said glass substrate one second metal level and one second insulating barrier, this second insulating barrier is to be arranged on this silicon film, and this second metal level is to be arranged on this second insulating barrier.
7, the method for annealing of low temperature polycrystalline silicon according to claim 1, it is characterized in that being formed with on the wherein said glass substrate insulating barrier, this polycrystalline silicon membrane is to be arranged on this glass substrate, this insulating barrier is to be arranged on this silicon film, and this first metal layer is to be arranged on this insulating barrier.
8, the method for annealing of low temperature polycrystalline silicon according to claim 1, the thickness that it is characterized in that wherein said the first metal layer is greater than 100 dusts.
9, the method for annealing of low temperature polycrystalline silicon according to claim 1 is characterized in that wherein said laser beam is to be a solid-state laser bundle.
10, a kind of system is to be used for show image, it is characterized in that this system comprises:
One low temperature polycrystalline silicon substrate, it has a glass substrate, a first metal layer and a polycrystalline silicon membrane, be formed with this first metal layer and this polycrystalline silicon membrane on this glass substrate, this polycrystalline silicon membrane is to have a first area, a second area and one the 3rd zone, wherein this first area is to be located between this second area and the 3rd zone, it is also relative with this first metal layer and establish, and the crystalline particle of this first area is greater than the crystalline particle of this second area and the crystalline particle in the 3rd zone.
11, system according to claim 10 is characterized in that wherein said polycrystalline silicon membrane via after the laser annealing fabrication process, and the crystalline particle of this first area is greater than the crystalline particle in this second area and the 3rd zone.
12, system according to claim 10 is characterized in that wherein the crystalline particle of contiguous this first metal layer in this first area is big than the crystalline particle of these other parts of first area.
13, system according to claim 10 it is characterized in that wherein said the first metal layer, this second area and the 3rd zone are gate, source electrode and the drains that is respectively an electric crystal, and this first area is the channel region for this electric crystal.
14, system according to claim 10, it is characterized in that wherein said low temperature polycrystalline silicon substrate more comprises one first insulating barrier, wherein this first metal layer is arranged on this glass substrate, this first insulating barrier is to be arranged on this first metal layer, and this polycrystalline silicon membrane is to be arranged on this first insulating barrier.
15, system according to claim 14 is characterized in that wherein said low temperature polycrystalline silicon substrate more comprises:
One second insulating barrier is to be arranged on this polycrystalline silicon membrane; And
One second metal level is to be arranged on this second insulating barrier.
16, system according to claim 10, it is characterized in that wherein said low temperature polycrystalline silicon substrate more comprises an insulating barrier, wherein this polycrystalline silicon membrane is to be arranged on this glass substrate, and this insulating barrier is to be arranged on this polycrystalline silicon membrane, and this first metal layer is to be arranged on this exhausted layer.
17, system according to claim 10, the thickness that it is characterized in that wherein said the first metal layer is greater than 100 dusts.
18, system according to claim 10, it is characterized in that it more comprises a liquid crystal indicator, be to have this low tempterature poly silicon and a module backlight, wherein this low tempterature poly silicon is to comprise the low temperature polycrystalline silicon substrate, and this module backlight is a side that is mounted on this low tempterature poly silicon.
19, system according to claim 10, it is characterized in that it more comprises an electronic installation, be to have this low tempterature poly silicon and an input unit, wherein this low tempterature poly silicon comprises the low temperature polycrystalline silicon substrate, this input unit and the coupling of this low tempterature poly silicon, and provide input to this low tempterature poly silicon, so that this low tempterature poly silicon show image.
20, system according to claim 19 is characterized in that wherein said electronic installation is portable phone, numerical digit camera, personal digital assistant, mobile computer, desktop PC, television set, automobile-used display or Portable DVD player.
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| CNB2006100805612A CN100547733C (en) | 2006-05-17 | 2006-05-17 | Be used for the system of show image and the laser anneal method of low temperature polycrystalline silicon |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102306634A (en) * | 2011-09-06 | 2012-01-04 | 深圳市华星光电技术有限公司 | Thin film transistor substrate and manufacturing method thereof |
| US9159960B2 (en) | 2013-04-26 | 2015-10-13 | Everdisplay Optronics (Shanghai) Limited | Annealing apparatus and annealing method |
| CN105374882A (en) * | 2015-12-21 | 2016-03-02 | 武汉华星光电技术有限公司 | Low-temperature polycrystalline silicon thin film transistor and preparation method thereof |
| CN111916462A (en) * | 2020-07-30 | 2020-11-10 | 北海惠科光电技术有限公司 | Substrate, method for preparing substrate and display panel |
-
2006
- 2006-05-17 CN CNB2006100805612A patent/CN100547733C/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102306634A (en) * | 2011-09-06 | 2012-01-04 | 深圳市华星光电技术有限公司 | Thin film transistor substrate and manufacturing method thereof |
| US9159960B2 (en) | 2013-04-26 | 2015-10-13 | Everdisplay Optronics (Shanghai) Limited | Annealing apparatus and annealing method |
| CN105374882A (en) * | 2015-12-21 | 2016-03-02 | 武汉华星光电技术有限公司 | Low-temperature polycrystalline silicon thin film transistor and preparation method thereof |
| US10192975B2 (en) | 2015-12-21 | 2019-01-29 | Wuhan China Star Optoelectronics Technology Co., Ltd | Low temperature polycrystalline silicon thin film transistor |
| CN111916462A (en) * | 2020-07-30 | 2020-11-10 | 北海惠科光电技术有限公司 | Substrate, method for preparing substrate and display panel |
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| CN100547733C (en) | 2009-10-07 |
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